AS9C25128M2036L-250BC

September 2004 Preliminary Information ® AS9C25256M2036L AS9C25128M2036L 2.5V 256/128K X 36 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 262,144/131,072 x 36[1] • Fully Synchronous, independent operation on both ports • Selectable Pipeline or Flow-Through output mode • Fast clock speeds in Pipeline output mode: 250 MHz operation (18Gbps bandwidth) • Fast clock to data access: 2.8ns for Pipeline output mode • Asynchronous output enable control • Fast OE access times: 2.8ns • Double Cycle Deselect (DCD) for Pipeline Output Mode • 18/17[1]-bit counter with Increment, Hold and Repeat features on each port • Dual Chip enables on both ports for easy depth expansion Note: 1. AS9C25256M2036L/AS9C25128M2036L • • • • • • • Interrupt and Collision Detection Features 2.5 V power supply for the core LVTTL compatible, selectable 3.3V or 2.5V power supply for I/Os, addresses, clock and control signals on each port Snooze modes for each port for standby operation 15mA typical standby current in power down mode Available in 256-pin Ball Grid Array (BGA), 208-pin Plastic Quad Flatpack (PQFP) and 208-pin fine pitch Ball Grid Array (fpBGA) Supports JTAG features compliant with IEEE 1149.1 Selection guide Feature Minimum cycle time Maximum Pipeline clock frequency Maximum Pipeline clock access time Maximum flow-through clock frequency Maximum flow-through clock access time Maximum operating current Maximum snooze mode current -250 4 250 2.8 150 6.5 TBD 18 -200 5 200 3.4 133 7.5 350 18 -166 6 166 3.6 100 10 300 18 -133 7.5 133 4.2 83 12 260 18 Units ns MHz ns MHz ns mA mA 9/30/04; v.1.3 Alliance Semiconductor P. 1 of 30 Copyright © Alliance Semiconductor. All rights reserved. AS9C25256M2036L AS9C25128M2036L ® Dual port logic block diagram R/W Control R/W Control BE3A-BE0A CE0A CE1A R/WA REGISTER BANK D Q REGISTER BANK D Q REGISTER BANK Q D REGISTER BANK Q D BE3B-BE0B CE0B CE1B R/WB O/P Control O/P Control O/P Control O/P Control 1 1 0 PL/FT 0 PL/FT PL/FTA OEA PL/FT QoutA QoutB PL/FT PL/FTB OEB REGISTER BANK Q D REGISTER BANK 1 True Dual Port Memory Array 256/128K X36 D Q REGISTER BANK REGISTER BANK DQ35A-DQ0A D Q DinA DinB Q D RPTA ADSA INCA A17[1]A-A0A Address Decoding Increment Logic Mirror Register REGISTER BANK D Q Address Decoding REGISTER BANK Q D Address Counter A CE0A OPTA CLKA CE1A R/WA PL/FTA CLKA OPTA INTA COLA CE0B Address Counter B Interrupt/Collision Detection Logic/Registers CE1B R/WB PL/FTB CLKB OPTB INTB COLB OPTB CLKB ZZA Snooze Logic Snooze Logic ZZB TDI TDO TCK JTAG TMS TRST Note: 1. Address A17 is a NC for AS9C25128M2036L 9/30/04, v.1.3 Alliance Semiconductor 0 1 DQ35B-DQ0B RPTB ADSB INCB 0 Increment Logic Mirror Register A17[1]B-A0B P. 2 of 30 AS9C25256M2036L AS9C25128M2036L ® General Description The AS9C25256M2036L/AS9C25128M2036L is a high-speed CMOS 9/4.5-Mbit synchronous Dual-Port Static Random Access Memory device, organized as 262,144/131,072 x 36 bits. It incorporates a selectable Flow-Through/Pipeline output feature for user flexibility. Clockto-data valid time is 2.8ns at 250 MHz for “Pipeline output” mode of operation. Each port contains an 18/17 bit linear burst counter on the input address register that can loop through the whole address sequence. After externally loading the counter with the initial address, it can be Incremented or Held for the next cycle. A new address can also be Loaded or the “Previous Loaded” address can be re-accessed (Repeated) using counter controls (More description to follow). The Registers on control, data, and address inputs provide minimal setup and hold times. The memory array utilizes Dual-Port memory cells to allow simultaneous access of any address from both ports. A particular port can write to a certain location while another port is reading from the same location, but the validity of read data is not guaranteed. However, the reading port is informed about the possible collision through its collision alert signal. The result of writing to the same location by more than one port at the same time is undefined. The Asynchronous Output Enable input pin allows asynchronous disabling of output buffers at any given time. The Byte Enable inputs allow individual byte read/write operations (refer Byte Control Truth Table). An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. AS9C25256M2036L/AS9C25128M2036L can support an operating voltage of either 3.3V or 2.5V on either or both ports, which is controlled by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. This device is available in 256-pin Ball Grid Array (BGA), 208-pin fine pitch Ball Grid Array (fpBGA) and 208-pin Plastic Quad Flatpack (PQFP) Address Counter The AS9C25256M2036L/AS9C25128M2036L carries an internal 18/17 bit address counter for each port which can loop through the entire memory array. The Address counter features are discussed below: Load: Any required external address can be loaded on to the counter. This feature is similar to normal address load in conventional memories. Increment: The address counter has the capability to internally increment the address value, potentially covering the entire memory array. Once the whole address space is completed, the counter will wrap around. The address counter is not initailized on Power-up, hence a known location has to be loaded before Increment operation. Hold: The value of the counter register can be held for an unlimited number of clock cycles by de-asserting ADS, INC, and RPT inputs. Repeat: The previously loaded address (loaded using a valid Load operation) can be re-accessed by asserting RPT input. A separate 18/17 bit register called “Mirror register” is used to hold the last loaded address.This register is not initialized on Power-up, hence a known location has to be loaded before Repeat operation (Refer Counter control truth table for details). 9/30/04, v.1.3 Alliance Semiconductor P. 3 of 30 AS9C25256M2036L AS9C25128M2036L ® Ball Assignment - 256-ball BGA AS9C25256M2036L/AS9C25128M2036L B - 256 Top view 1 A NC 2 TDI 3 NC 4 A17[1]A NC 5 A14A A15A A13A 6 A11A A12A A10A 7 A8A A9A 8 BE2A BE3A BE1A 9 CE1A CE0A BE0A 10 OEA R/WA CLKA 11 INCA RPTA ADSA 12 A5A A4A A6A 13 A2A A1A A3A VDD 14 A0A VDD 15 NC 16 NC A B DQ18A NC TDO DQ17A NC B C DQ18B DQ19A VSS A16A A7A OPTA DQ17B DQ16A C D DQ20B DQ19B DQ20A PL/FTA VDDQA VDDQA VDDQB VDDQB VDDQA VDDQA VDDQB VDDQB DQ21B DQ21A DQ22A VDDQA DQ23A DQ22B DQ23B VDDQA DQ24B DQ24A DQ25A VDDQB DQ26A DQ25B DQ26B VDDQB DQ27A DQ28B DQ27B VDDQA DQ29B DQ29A DQ28A VDDQA DQ30A DQ31B DQ30B VDDQB DQ32B DQ32A DQ31A VDDQB VDD VDD INTA COLA VSS VSS VSS VSS VDD VDD DQ15B DQ15A DQ16B D E VDDQB DQ13A DQ14A DQ14B VDDQB DQ12B DQ13B DQ12A VDDQA DQ10A DQ11A DQ11B VDDQA DQ9B VDDQB DQ8B VDDQB DQ6B VDDQA DQ5A VDDQA DQ3B VDD DQ2A DQ0A OPTB A0B DQ9A DQ7B DQ6A DQ4B DQ3A DQ1B DQ0B NC DQ10B DQ8A DQ7A DQ5B DQ4A DQ2B DQ1A NC E F VDD NC VSS VSS VSS VSS VDD F G VSS VSS VSS VSS VSS VSS VSS G H VSS VSS VSS VSS VSS VSS VSS VSS H J ZZB VSS VSS VSS VSS VSS VSS VSS ZZA VSS J K VSS VSS VSS VSS VSS VSS K L VDD NC COLB INTB VSS VSS VSS VSS VDD L M VDD VDD VSS VSS VSS VDD VDD M N DQ33A DQ34B DQ33B PL/FTB VDDQB VDDQB VDDQA VDDQA VDDQB VDDQB VDDQA VDDQA DQ35B DQ34A DQ35A NC NC TMS A16B NC A13B A15B A14B A10B A12B A11B A7B A9B A8B BE1B BE3B BE2B BE0B CE0B CE1B CLKB R/WB OEB ADSB RPTB INCB A6B A4B A5B N P A3B A1B A2B P R TRST R T TCK NC A17[1]B 4 NC NC T 1 2 3 5 6 7 8 9 10 11 12 13 14 15 16 Note: 1. Address A17 is a NC for AS9C25128M2036L 9/30/04, v.1.3 Alliance Semiconductor P. 4 of 30 AS9C25256M2036L AS9C25128M2036L ® Ball Assignment - 208-ball fpBGA 1 A 2 3 VSS 4 TDO 5 COLA 6 A16A 7 A12A A9A A10A A7A 8 A8A BE2A BE3A BE0A 9 BE1A CE0A CE1A VDD 10 VDD 11 CLKA ADSA R/WA RPTA 12 INCA A5A A6A A3A 13 A4A A1A A2A VDD 14 A0A NC 15 OPTA 16 DQ17A 17 VSS A DQ19A DQ18A DQ20B VSS B DQ18B TDI A17[1]A A13A INTA A15A A14A A11A VSS VDDQB DQ16A DQ15B DQ16B DQ15A VSS B C VDDQA DQ19B VDDQB PL/FTA DQ22A VSS DQ21A DQ20A VSS VDD C D OEA DQ17B VDDQA DQ14A DQ14B DQ12A DQ13B VSS VSS DQ13A D E DQ23A DQ22B VDDQB DQ21B VDDQA DQ23B DQ24A DQ26A VDD VSS VSS E F DQ12B DQ11A VDDQB F G DQ25A DQ24B DQ9A VDDQA DQ10A DQ11B VDD DQ9B VDD VSS DQ10B VDDQB VSS G H DQ26B VDDQB DQ25B VSS ZZB VSS H J VDDQA VDD DQ28B VSS K DQ27B AS9C25256M2036L/AS9C25128M2036L F - 208 Top view ZZA VSS J DQ7B VDDQA DQ8B DQ6B VSS DQ7A DQ6A VSS K L DQ29B DQ28A VDDQB DQ27A VDDQA DQ29A DQ30B DQ31A VSS VSS DQ8A L M DQ5B VDDQB DQ5A DQ4A M N DQ31B DQ30A TRST A16B A12B A9B A10B A7B A8B BE2B BE3B BE0B BE1B CE0B CE1B VDD VDD CLKB ADSB R/WB RPTB INCB A5B A6B A3B A4B A1B A2B A0B DQ3B VDDQA DQ4B DQ2A NC DQ3A VSS N P DQ32B DQ32A VDDQB DQ35B VSS DQ33A DQ34B TCK P R A17[1]B A13B INTB A15B A14B A11B VSS VDDQA DQ1B VDDQB DQ0B OPTB VSS DQ2B DQ1A R T DQ33B DQ34A VDDQA TMS VSS DQ35A PL/FTB COLB VSS VSS T U OEB VDD DQ0A U 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Note: 1. Address A17 is a NC for AS9C25128M2036L 9/30/04, v.1.3 Alliance Semiconductor P. 5 of 30 AS9C25256M2036L AS9C25128M2036L ® Pin Assignment - 208-pin PQFP DQ19A DQ19B DQ20A DQ20B VDDQA VSS DQ21A DQ21B DQ22A DQ22B VDDQB VSS DQ23A DQ23B DQ24A DQ24B VDDQA VSS DQ25A DQ25B DQ26A DQ26B VDDQB ZZB VDD VDD VSS VSS VDDQA VSS DQ27B DQ27A DQ28B DQ28A VDDQB VSS DQ29B DQ29A DQ30B DQ30A VDDQA VSS DQ31B DQ31A DQ32B DQ32A VDDQB VSS DQ33B DQ33A DQ34B DQ34A 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 208 207 206 205 204 203 202 201 200 199 198 197 196 195 194 193 192 191 190 189 188 187 186 185 184 183 182 181 180 179 178 177 176 175 174 173 172 171 170 169 168 167 166 165 164 163 162 161 160 159 158 157 156 155 154 153 152 151 150 149 148 147 146 145 144 143 142 141 140 139 138 137 136 135 134 133 132 131 130 129 128 127 126 125 124 123 122 121 120 119 118 117 116 115 114 113 112 111 110 109 108 107 106 105 VSS VDDQB DQ18B DQ18A VSS PL/FTA COLA INTA NC NC A17[1]A A16A A15A A14A A13A A12A A11A A10A A9A A8A A7A BE3A BE2A BE1A BE0A CE1A CEOA VDD VDD VSS VSS CLKA OEA R/WA ADSA INCA RPTA A6A A5A A4A A3A A2A A1A A0A VDD VDD NC OPTA DQ17A DQ17B VDDQB VSS AS9C25256M2036L/AS9C25128M2036L P - 208 Top view DQ16A DQ16B DQ15A DQ15B VSS VDDQA DQ14A DQ14B DQ13A DQ13B VSS VDDQB DQ12A DQ12B DQ11A DQ11B VSS VDDQA DQ10A DQ10B DQ9A DQ9B VSS VDDQB VDD VDD VSS VSS ZZA VDDQA DQ8B DQ8A DQ7B DQ7A VSS VDDQB DQ6B DQ6A DQ5B DQ5A VSS VDDQA DQ4B DQ4A DQ3B DQ3A VSS VDDQB DQ2B DQ2A DQ1B DQ1A Note: 1. Address A17 is a NC for AS9C25128M2036L 9/30/04, v.1.3 VSS VDDQA DQ35B DQ35A PL/FTB NC COLB INTB NC NC [1] A17 B A16B A15B A14B A13B A12B A11B A10B A9B A8B A7B BE3B BE2B BE1B BE0B CE1B CE0B VDD VDD VSS VSS CLKB OEB R/WB ADSB INCB RPTB A6B A5B A4B A3B A2B A1B A0B VDD VSS NC OPTB DQ0A DQ0B VDDQA VSS 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 Alliance Semiconductor P. 6 of 30 AS9C25256M2036L AS9C25128M2036L ® Signal description Signal Port A CLKA A0A - A17A CE0A, CE1A R/WA BE0A - BE3A ADSA INCA RPTA OEA ZZA PL/FTA Port B CLKB A0B - A17B CE0B, CE1B R/WB BE0B - BE3B ADSB INCB RPTB OEB ZZB PL/FTB I/O Properties DQ0A - DQ35A DQ0B - DQ35B OPTA INTA COLA VDDQA VDD VSS TCK TDI TDO TMS TRST OPTB INTB COLB VDDQB Description Notes Clock. Each port has an independent Clock input that can be of different frequencies. I CLOCK All inputs except OEx and ZZx are synchronous to the corresponding port’s clock and 1 must meet setup and hold time about the rising edge of the clock. I SYNC External Address. Sampled on the rising edge of corresponding port clock 6 I/O SYNC Bidirectional data pins Chip enable inputs. Active low and high, respectively. Sampled on the rising edge of I SYNC corresponding port clock. Read/Write enable. Drive this pin LOW to write to, or HIGH to Read from the I SYNC memory array. Byte Enable Inputs. Active low. Asserting these signals enables Read and Write I SYNC operations to the corresponding bytes of the memory array. (Refer Byte Control Truth Table) Address Strobe Enable.Active low. Loads external address onto the counter. (Refer I SYNC Counter Control Truth Table) Address Counter Increment. Active low. Increments the counter value. (Refer I SYNC Counter Control Truth Table) Address Counter Repeat. Active low. Reloads the counter with the previously loaded I SYNC external address.(Refer Counter Control Truth Table) Asynchronous output enable. I/O pins are driven when the OE is low and the chip is I ASYNC in Read mode. A high on OE tristates the I/O pins. Snooze Mode Input. Places the device in low power mode. Data is retained. This pin I ASYNC has an internal pull-down and can be floating. Pipeline/Flow-Through Select. When low, enables single register flow-through I STATIC mode. When high, enables double register Pipeline mode. This pin has an internal pull-up and can be left floating to operate in pipeline mode. VDDQx Option. OPTx selects the operating voltage levels for the I/Os, addresses, I STATIC clock, and controls on that port. This pin has an internal pull-up and can be left 1,2,3 floating to operate in 3.3V mode. Interrupt Flag. Used for message passing between two ports. (Refer Interrupt Logic O SYNC Truth Table) Collision Alert Flag. Used to indicate collision during simultaneous memory access O SYNC to the same location by both the ports (Refer Collision Detection Truth Table) I POWER Power to I/O bus. Can be 3.3V or 2.5V depending on OPTx input. 1,2,3 I POWER Power Inputs (To be connected to 2.5V Power supply) 2 I GROUND Ground Inputs (To be connected to Ground supply) I I O I I CLOCK (JTAG) SYNC (JTAG) SYNC (JTAG) SYNC (JTAG) ASYNC (JTAG) JTAG Test Clock Input. All JTAG signals except TRST are synchronous to this clock. JTAG Test Data Input. Data on the TDI input will be shifted serially into selected registers. JTAG Test Data Output. TDO transitions occur on the falling edge of TCK. TDO is normally tristated except when the captured data is shifted out of the JTAG TAP. JTAG Test Mode Select Input. It controls the JTAG TAP state machine. State machine transitions occur on the rising edge of TCK. JTAG Test Reset Input. Asynchronous input used to initialize TAP controller. 4,5 4,5 5 4,5 4,5 Notes: 1. Subscript 'x' represents 'A' for Port A and 'B' for Port B. 2. OPTx,VDDQx and VDD must be set to appropriate operating levels before applying inputs on the I/Os and controls for that port. 3. OPTx = VDD (2.5V) implies that corresponding port's I/Os, addresses, clock, and controls will operate at 3.3V level and VDDQx must be supplied at 3.3V. OPTx = VSS (0V) implies that corresponding port's I/Os, addresses, clock, and controls will operate at 2.5V level and VDDQx must be supplied at 2.5V. Each port can independently operate on either of the VDDQ levels. 4. If unused JTAG inputs may be left unconnected. 5. JTAG is not supported in PQFP package. 6. Address A17 is a NC forAS9C25128M2036L 9/30/04, v.1.3 Alliance Semiconductor P. 7 of 30 AS9C25256M2036L AS9C25128M2036L ® Byte control truth table[1,2,3,4,5] BE3 H H H H L BE2 H H H L H BE1 H H L H H BE0 H L H H H CLK L to H L to H L to H L to H L to H Read or Write Byte 0 Read or Write Byte 1 Read or Write Byte 2 Read or Write Byte 3 Mode All Bytes Deselected - NOP Notes: 1. L = low, H = high 2. CE0 = L, CE1 = H (Chip in Select mode) 3. R/W = H for a Read operation, R/W = L for a Write operation 4. Byte 3 - DQ[35:27], Byte 2 - DQ[26:18], Byte 1 - DQ[17:9], Byte 0 - DQ[8:0] 5. More than one byte enable may be simultaneously asserted Read/write control truth table[1,4] CE[2] H L L L R/W X X L H BEn[3] X H L L CLK L to H L to H L to H L to H Operation Chip Deselect Byte Deselect Byte Write Byte Read DQn[0:8][3,7] Hi-Z[5,9] Hi-Z[5,9] Din[6] Qout[5,8] Notes: 1. L = low, H = high, X = don't care 2. CE is an internal signal. CE = H implies 'Chip is Deselected' (CE0 = H or CE1 =L), CE = L implies 'Chip is Selected' (CE0 = L and CE1 =H) 3. BEn refers to any one of the 4 byte controls [n= 3,2,1 or 0] and DQn refers to the corresponding Byte 4. Snooze de-asserted (ZZ=L) 5. True in flow-through mode. For Pipeline mode there will be a 1 cycle latency [refer timing diagrams] 6. For a write command issued before the completion of a read command, OE must be HIGH before the input data setup time and held HIGH throughout the input data hold time. 7. All DQs are tristated on power-up 8. OE should be asserted (OE = L) (Refer Read timing waveform) 9. In pipeline mode the DQs are HighZ-ed in the same cycle if R/W=L Counter control truth table[1,2,5,6] CLK L to H L to H L to H L to H ADS[3] L H H X INC[3] X L H X RPT[3] H H H L External Address An X X X Previous Address Accessed X An An X Mirror Register Content[4] An Am Am Am Address Accessed An An + 1 An Am Load Hold Repeat Operation [4] Increment Notes: 1. L = low, H = high, X = don't care 2. Cycle can be Read, Write or Deselect (Controlled by appropriate setting of R/W, CE0, CE1 and BEn) 3. ADS, INC, RPT are independent of all other memory controls including R/W, CE0,CE1 and BEn (i.e Counter works independent of R/W, CE0,CE1 and BEn) 4. The 'Mirror register' used for the Repeat operation is loaded with External address during every valid ADS access. “Am” refers to the mirror register content. 5. Clock to the counter is disabled during Snooze mode (True for both ports). 6. The counter and the mirror registers are not initialized on Power-up (refer Counter description). 9/30/04, v.1.3 Alliance Semiconductor P. 8 of 30 AS9C25256M2036L AS9C25128M2036L ® Package Thermal Resistance Description Conditions BGA Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/JESD51 fpBGA PQFP Symbol θJA θJA θJA θJC Typical TBD TBD TBD TBD Units °C/W °C/W °C/W °C/W Thermal Resistance (junction to ambient)[1] Thermal Resistance (junction to top of case)[1] Notes: 1. This parameter is sampled. Capacitance[1] (TA = +25 °C, F = 1.0 Mhz)[2] Parameter Input Capacitance Output Capacitance I/O Capacitance Symbol CIN COUT CI/O Signals Address and Control pins I/O pins Test Condition[3] VIN = L to H or H to L VI/O = L to H or H to L BGA (Max) TBD TBD TBD fpBGA (Max) TBD TBD TBD PQFP (Max) TBD TBD TBD Unit pF pF pF Flag Output pins VOUT = L to H or H to L Notes: 1. Sampled, not 100% tested 2. TA stands for 'Ambient temperature'. 3. L = 0V; H = 3V Absolute maximum ratings[1] Rating Parameter Core supply voltage relative to VSS I/O supply voltage relative to VSS Input and I/O voltage relative to VSS Power Dissipation Short circuit output current Storage Temperature Storage Temperature under Bias Junction Temperature Symbol VDD VDDQ VIN PD IOUT TSTG TBIAS TJN Min -0.5 -0.3 -0.3 -65 -55 Max 3.6 3.9 VDDQ + 0.3 TBD TBD 150 125 TBD Unit V V V W mA °C °C °C Notes: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating for extended periods may affect reliability. 9/30/04, v.1.3 Alliance Semiconductor P. 9 of 30 AS9C25256M2036L AS9C25128M2036L ® Recommended operating Temperature Grade Commercial Industrial Ambient Temperature (TA) 0°C to 70°C -40°C to 85°C Recommended operating conditions Parameter Core Supply Voltage I/O supply Voltage Ground Symbol VDD VDDQ VSS Min 2.4 2.4 0 VDDQ = 2.5V[1] Typ 2.5 2.5 0 Max 2.6 2.6 0 Min 2.4 3.15 0 VDDQ = 3.3V[2] Typ 2.5 3.3 0 Max 2.6 3.45 0 Unit V V V Notes: 1. OPT pin for a given port must be set to VSS(0V) to operate at VDDQ = 2.5V levels on the I/Os, addresses, clock and controls of that port. 2. OPT pin for a given port must be set to VDD(2.5V) to operate at VDDQ = 3.3V levels on the I/Os, addresses, clock and controls of that port. DC Electrical Characteristics (VDD = 2.5 V ± 100 mV) VDDQ = 2.5V Parameter Input Leakage Current PL/FT and ZZ Input Leakage Current Output Leakage Current[1] Input high (logic 1) voltage (Address, Control, Clock & Data Inputs) Input high voltage (ZZ,OPT,PL/FT) Input low (logic 0) voltage (Address, Control, Clock & Data Inputs) Input low voltage (ZZ,OPT,PL/FT) Output low voltage Output high voltage Symbol |ILI| |ILI| |ILO| Test Conditions VDDQ = Max; 0V < VIN < VDDQ VDD = Max; 0V < VIN < VDD OE>=VIH; 0V < VOUT < VDDQ Min Max 2 2 2 Test Conditions VDDQ = Max; 0V < VIN < VDDQ VDD = Max; 0V < VIN < VDD OE>=VIH; 0V < VOUT < VDDQ VDDQ = 3.3V Min Max 2 2 2 Units µA µA µA VIH 1.7 VDDQ + 0.1V 2 VDDQ + 0.15V V VIH - VDD - 0.2V VDD + 0.1V - VDD - 0.2V VDD + 0.1V V VIL - -0.3 0.7 - -0.3 0.8 V VIL VOL VOH IOL = +2mA; VDDQ = Min IOH = -2mA; VDDQ = Min -0.3 2.0 0.2 0.4 - IOL = +4mA; VDDQ = Min IOH = -4mA; VDDQ = Min -0.3 2.4 0.2 0.4 - V V V Notes: 1. Outputs disabled (High-Z condition). 9/30/04, v.1.3 Alliance Semiconductor P. 10 of 30 AS9C25256M2036L AS9C25128M2036L ® IDD operating conditions and maximum limits[4] (VDD = 2.5 V ± 100 mV) Parameter Operating current (Both ports active) Pipeline mode -(PL/FT > VIH) Operating current (Both ports active) Flow-through mode (PL/FT < VIL) Standby current (Both ports) Both ports disabled (CEA = CEB = H), ISB1 ZZA = ZZB < VIL, f=fMax ISB2 [1] TBD TBD TBD 105 TBD 90 TBD 80 Symbol Test Conditions -250 -200 -166 -133 Units Typ Max Typ Max Typ Max Typ Max Both ports enabled (CEA = CEB = L[3]), ICC Outputs disabled (IOUT = 0mA), ZZA = ZZB < VIL, f=fMax[1] TBD TBD TBD 350 TBD 300 TBD 260 mA TBD TBD TBD TBD TBD TBD TBD TBD mA mA Standby current (One port) One port enabled (CEA = L and CEB = H)[5], Active port's outputs disabled, ZZA = ZZB < VIL, f=fMax ISB3 [1] TBD TBD TBD 265 TBD 225 TBD 190 mA Full standby current (Both ports) Both ports disabled (CEA = CEB = H), ZZA = ZZB < VIL, f=0 [2] 20 25 20 25 20 25 20 25 mA Full standby current (One port) Snooze mode current Notes: ISB4 One port in Snooze (ZZA > VIH, ZZB < VIL, and CEB = L)[5], Active port's outputs disabled, f=fMax[1] Both ports in Snooze (ZZA = ZZB > VIH), f=fMax[1] TBD TBD TBD 265 TBD 225 TBD 190 mA IZZ 15 18 15 18 15 18 15 18 mA 1. f=fMax implies address and controls (except OE) are cycling at maximum clock frequency using AC test conditions (Refer AC test conditions). 2. f = 0 implies address and controls are static. Corresponding current numbers indicated are true for both CMOS (VIN > VDDQ - 0.2V or VIN < 0.2V) and TTL (VIN > VIH or VIN < VIL) level inputs. 3. CEA and CEB are internal signals (CEx = L implies CE0x < VIL and CE1x > VIH, CEx = H implies CE0x > VIH or CE1x < VIL). 4. Subscript 'x' represents 'A' for Port A and 'B' for Port B. 5. “A” and “B” are interchangeable. 9/30/04, v.1.3 Alliance Semiconductor P. 11 of 30 AS9C25256M2036L AS9C25128M2036L ® AC timing characteristics[1,2,5,6] (VDD = 2.5 ± 100mV) Parameter Symbol -250 Min. Max. 4 1.7 1.7 6.5 1.7 1.7 -200 Min. Max. 5 2 2 7.5 2 2 -166 Min. Max. 6 2.4 2.4 10 2.4 2.4 -133 Min. Max. 7.5 3 3 12 3 3 Unit Notes Clock Cycle Time (Pipeline) Clock High Pulse Width (Pipeline) Clock Low Pulse Width (Pipeline) Cycle Time (Flow-Through) Clock High Pulse Width (Flow-Through) Clock Low Pulse Width (Flow-Through) Output Clock access time (Pipeline) Output Data Hold from Clock High (Pipeline) Clock High to Output Low-Z (Pipeline) Clock High to Output High-Z (Pipeline) Clock access time (Flow-Through) Output Data Hold from Clock High (Flow-Through) Clock High to Output Low-Z (Flow-Through) Clock High to Output High-Z (Flow-Through) Output Enable to Data Valid Output Enable Low to Output Low-Z Output Enable High to Output High-Z Setup Address Setup to Clock High Chip Enable Setup to Clock High Byte Enable Setup to Clock High R/W Setup to Clock High Input Data Setup to Clock High ADS Setup to Clock High INC Setup to Clock High RPT Setup to Clock High Hold Address Hold from Clock High Chip Enable Hold from Clock High Byte Enable Hold from Clock High R/W Hold from Clock High Input Data Hold from Clock High ADS Hold from Clock High INC Hold from Clock High RPT Hold from Clock High Flag Interrupt Flag Set Time Interrupt Flag Reset Time Collision Flag Set Time Collision Flag Reset Time Port-to-Port Delay Clock-to-Clock Delay tCYCP tCHP tCLP tCYCF tCHF tCLF tCDP tOHP tLZCP tHZCP tCDF tOHF tLZCF tHZCF tOE tLZOE tHZOE tAS tCES tBS tWS tDS tADSS tINCS tRPTS tAH tCEH tBH tWH tDH tADSH tINCH tRPTH tSINT tRINT tSCOL tRCOL tCCO 2.8 3.4 3.6 4.2 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 3 3 3 3 3 3 3 3,8 3,8 3 3,8 3,8 4 4 4 1 1 1 1 1 1 1 1 1 1 1 1 2.8 6.5 3.4 7.5 3.6 10 4.2 12 1 1 1 1 1 1 1 1 1 1 1 1 2.8 2.8 3.4 3.4 3.6 3.6 4.2 4.2 1 1 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 1 1 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 1 1 1.7 1.7 1.7 1.7 1.7 1.7 1.7 1.7 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 1 1 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 2.8 3.4 3.6 4.2 6 6 2.8 2.8 6 6 3.4 3.4 6 6 3.6 3.6 7 7 4.2 4.2 3.0 3.5 4 5 - - - - 7 Notes: 1. All timings are same for both ports. 2. These values are valid for either level of VDDQ (2.5V/3.3V) 3. A particular port will operate in Pipeline output mode if PL/FT = VDD and in flow-through output mode if PL/FT = 0V. Each port can independently operate in any of these modes. 4. Output Enable (OE) is an asynchronous input. 5. PL/FT and OPT should be treated as DC signals and should reach steady state before normal operation. 6. Refer AC Test Conditions to view the test conditions used for these measurements. 7. This parameter has to be taken care to avoid collision during simultaneous memory access of the same location. 8. To avoid bus contention, at a given voltage and temperature tLZC is more than tHZC (True in both Pipeline and flow-through output mode). 9/30/04, v.1.3 Alliance Semiconductor P. 12 of 30 AS9C25256M2036L AS9C25128M2036L ® Timing waveform of read cycle[7] tCYC[2] tCL Don’t care Undefined tCH CLK tCES tCEH CE[3] tBS tBH BEn[4] R/W tAS tAH ADDRESS[5] tWH tWS A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A1 OE[6] [Pipeline Mode] tLZOE tOHP DATA OUT[1] [Pipeline Mode] tHZCP Q2 tHZOE Q6 tLZCP tOE Q8 Q10 Q1 Q1 tLZOE tCDP tLZOE OE[6] [Flow-through Mode] tLZCF DATA OUT[1] [Flow-through Mode] tOHF Q1 Q1 tHZCF Q2 tHZOE Q6 tOE Q8 Q10 Q12 tLZOE tCDF Read (A1) Read (A2) Dsel Read[8] (A4) Dsel Read (A6) Read (A7) Read (A8) Dsel Read (A10) Dsel Read (A12) Notes: 1. Both Flow-through and Pipeline Outputs indicated. A particular port is configured in Flow-through mode if PL/FT for that port is driven low, and in Pipeline mode if PL/FT is driven high or left unconnected. 2. Parameters tCYC, tCH and tCL are different in Flow-through and Pipeline modes of operation (Refer AC Timing characteristics). 3. CE is an internal signal.CE = H implies 'Chip is Deselected' (CE0 = H or CE1 =L), CE = L implies 'Chip is Selected' (CE0 = L and CE1 =H). Timings indicated for CE hold good for CE0 and CE1 4. BEn refers to any one of the 4 byte controls [n= 3,2,1 or 0] and DATA OUT refers to the corresponding Byte. 5. Counter set in “Load” mode (ADS = L,INC = X,RPT = H). 6. OE is an asynchronous input. 7. All timings are similar for both ports. 8. Read with Byte disabled. Data is not read out.Bus in High-Z condition. 9/30/04, v.1.3 Alliance Semiconductor P. 13 of 30 AS9C25256M2036L AS9C25128M2036L ® Timing wave form read/write cycle[7] tCH CLK tCES tCEH tBS tBH BEn[4] tCYC[2] tCL Don’t care Undefined CE[3] R/W tAS tAH [5] ADDRESS A1 A2 A3 A3 A4 tWH tWS A5 A6 A7 A8 A9 A10 A11 A12 OE[6] [Pipeline Mode] [1] DATA IN [Pipeline Mode] tDS tDH D3 D6 D8 tCDP Q1 tHZCP tHZOE Q9 [1] DATA OUT [Pipeline Mode] tLZCP OE[6] [Flow-through Mode] [1] DATA IN [Flow-through Mode] D3 D6 D11 tCDF Q1 tOHF Q2 tHZCF Q4 tHZOE Q7 Q9 [1] DATA OUT [Flow-through Mode] tDS tDH tLZCF Read (A1) Read (A2) Write[8] Write (A3) Read (A4) Read (A5) Write (A6) Read (A7) Write[9] (A8) Read (A9) Dsel Write[9] (A11) Notes: 1. Both Flow-through and Pipeline Inputs/Outputs indicated.A particular port is configured in Flow-through mode if PL/FT for that port is driven low, and in Pipeline mode if PL/FT is driven high or left unconnected. 2. Parameters tCYC,tCH and tCL are different in Flow-through and Pipeline modes of operation.(Refer AC Timing characteristics) 3. CE is an internal signal.CE = H implies 'Chip is Deselected' (CE0 = H or CE1 =L), CE = L implies 'Chip is Selected' (CE0 = L and CE1 =H). Timings indicated for CE hold good for CE0 and CE1 4. BEn refers to any one of the 4 byte controls [n= 3,2,1 or 0] and DATA OUT refers to the corresponding Byte. 5. Counter set in “Load” mode (ADS = L,INC = X,RPT = H). 6. OE is an asynchronous input. 7. All timings are similar for both ports. 8. Invalid write. Memory Content of the selected location may get corrupted and should be re-written before future readback. 9. Write (A11) is invalid in Pipeline mode and Write (A8) is invalid in Flow-through mode. Memory Content of the selected location may get corrupted and should be re-written before future readback. 9/30/04, v.1.3 Alliance Semiconductor P. 14 of 30 AS9C25256M2036L AS9C25128M2036L ® Timing waveform of address counter[6] tCH CLK tCES tCEH CE[3] tCYC[2] tCL Don’t care Undefined [4] R/W tAS tAH ADDRESS tWH tWS A2 A1 INTERNAL ADDRESS A1 A1+1 A1+2 A1+2 A1 A1+1 A1+2 A1+2 A2 A2+1 A2+1 A2 tADSS tADSH ADS tINCS tINCH INC tRPTS tRPTH RPT tDS tDH D1 DATA IN D1+1 D1+2 D1+2 tCDP DATA OUT[1] [Pipeline Mode] tOHP [5] Q1 Q1+1 tHZCP Q4 Q3 Q1+2 Q4 tCDF DATA OUT[1] [Flow-through Mode] tLZCP Q1 tOHF Q1+1 tHZCF [5] Q1+2 Write Load (A1) Write Incr Write Incr Write Hold tLZCF Read Rept Read Incr Read Incr Read Hold Dsel Load (A2) Dsel Incr Dsel Hold Dsel Rept Notes: 1. Both Flow-through and Pipeline Outputs indicated. A particular port is configured in Flow-through mode if PL/FT for that port is driven low, and in Pipeline mode if PL/FT is driven high or left unconnected. 2. Parameters tCYC,tCH and tCL are different in Flow-through and Pipeline modes of operation (Refer AC Timing characteristics). 3. CE is an internal signal. CE = H implies 'Chip is Deselected' (CE0 = H or CE1 =L), CE = L implies 'Chip is Selected' (CE0 = L and CE1 =H). Timings indicated for CE hold good for CE0 and CE1. 4. These cycles indicate that Counter works independent of all memory controls including R/W,CE and BEn. 5. If a Hold operation is performed for a Read access, the Data-out is held valid for the subsequent clock cycle also. 6. All timings are similar for both ports. 9/30/04, v.1.3 Alliance Semiconductor P. 15 of 30 AS9C25256M2036L AS9C25128M2036L ® Mailbox Interrupts The AS9C25256M2036L/AS9C25128M2036L has an Inbuilt Mailbox Logic that can be used for communication between the two ports. One memory location is assigned as mail box (message center) for each port. The location 3FFFE (HEX) is assigned as the message center for Port A and 3FFFF (HEX) for Port B (IFFFE and IFFFF for AS9C25128M2036L). The port A interrupt flag (INTA) is asserted when the port B writes to memory location 3FFFE (HEX) (IFFFE for AS9C25128M2036L). The port A clears the interrupt flag by reading the address location 3FFFE (HEX) (IFFFE for AS9C25128M2036L). Likewise, the port B interrupt flag (INTB) is asserted when the port A writes to memory location 3FFFF (HEX)(IFFFF for AS9C25128M2036L) and to clear the interrupt flag (INTB), the port B must read the memory location 3FFFF (IFFFF for AS9C25128M2036L) (Refer Interrupt Logic Truth Table). The interrupt flag is asserted in a flow-through mode (i.e., it follows the clock edge of the writing port). Also, the flag is reset in a flowthrough mode (i.e., it follows the clock edge of the reading port). Each port can read the other port’s mailbox without de-asserting the interrupt and each port can write to its own mailbox without asserting the interrupt. If an application does not require message passing, INT pins can be ignored. Interrupt logic truth table[1,4] CLKA R/WA CEA[2] A17A-A0A[3,5] CLKB R/WB CEB[2] A17B-A0B[3,5] INTA INTB Function Assert Port B Interrupt Flag De-assert Port B Interrupt Flag Assert Port A Interrupt Flag De-assert Port A Interrupt Flag L to H L to H L to H L to H L X X H L X X L 3FFFF X X 3FFFE L to H L to H L to H L to H X H L X X L L X X 3FFFF 3FFFE X X X L H L H X X Notes: 1. L = low, H = high, X = don't care 2. CEx is an internal signal ('x' = 'A' or 'B'). CEx = H implies 'Chip is Deselected' (CE0x = H or CE1x =L), CEx = L implies 'Chip is Selected' (CE0x = L and CE1x =H) 3. Address specified here is the internal address (refer Counter control truth table). 4. Both Interrupt Flags are De-asserted on power-up. 5. Address A17 is a NC for AS9C25128M2036L, hence Interrupt addresses are IFFFF and IFFFE 9/30/04, v.1.3 Alliance Semiconductor P. 16 of 30 AS9C25256M2036L AS9C25128M2036L ® Interrupt timing wave form[2] tCYC[1] CLKA Don’t care tWS tWH R/WA[2] tCH[1] tCL[1] ADDRESSA[3] [4] 3FFFF 3FFFF Aa Aa tAS tAH Aa [5] Aa 3FFFE Aa tSINT INTA tRINT tCYC[1] CLKB tWS tCH[1] tWH R/WB[2] tCL[1] [5] ADDRESSB[3] Ab Ab 3FFFF [4] 3FFFE 3FFFE Ab tAS tAH Ab Ab tSINT INTB tRINT Notes: 1. Parameters tCYC,tCH and tCL are different in Flow-through and Pipeline mode of operation and can be different for different ports (Refer AC Timing characteristics). 2. Chip Selected (CE0 = L and CE1 =H). True for both ports. 3. Address indicated is the Internal Address used and is dependent on the Address counter control inputs for that cycle. 4. 3FFFF (IFFFF for AS9C25128M2036L) is the Mailbox for port B and 3FFFE (IFFFE for AS9C25128M2036L) is the Mailbox for port A. 5. “Aa” and “Ab” refer to any other valid address other than 3FFFF or 3FFFE (IFFFF or IFFFE for AS9C25128M2036L). 9/30/04, v.1.3 Alliance Semiconductor P. 17 of 30 AS9C25256M2036L AS9C25128M2036L ® Collision detection Three different cases of collisions can be listed depending on the type of access from two ports: Simultaneous Read: A true dual-ported memory cell allows data to be read simultaneously from both ports of the device. Hence no data is corrupted, lost, or incorrectly output, and none of the collision alert flags is asserted. Simultaneous Write: When both ports are writing simultaneously to the same location, both write operations would fail. Therefore, the collision flag is asserted on both ports. Simultaneous Read and Write: When one port is writing and the other port is reading from the same location in the memory, the data written will be valid. However, the read operation would fail and hence the reading port's collision flag is asserted. The alert flag (COLx) is asserted on the 3rd (for both pipe-lined and flow-through output mode) rising clock edge of the affected port following the collision, and remains low for one cycle. On continuous collisions (one or both ports writing during each access), the collision alert flag will be asserted and de-asserted every alternate cycle. Collision detection truth table[1,2,4] CLKA R/WA CLKB R/WB Port address[3] COLA COLB Function L to H L to H L to H L to H L to H H H L L L L to H L to H L to H L to H L to H H L H L H MATCH MATCH MATCH MATCH NO MATCH H L H L H H H L L H Both ports reading. Not a valid collision. No collision flag asserted on either port. Port A reading, Port B writing. Valid collision. Collision flag asserted on port A. Port B reading, Port A writing. Valid collision. Collision flag asserted on port B. Both ports writing. Valid collision. Collision flag asserted on both ports. No match. No collision flag asserted on either port. Notes: 1. L = low, H = high, X = don't care 2. Chip Selected (CE0 = L and CE1 =H). True for both ports. Collision flag is not affected if any one or both ports are deselected. 3. “MATCH” indicates that internal addresses of both the ports are the same (refer Counter control truth table). 4. Both Collision Flags are De-asserted on power-up. 9/30/04, v.1.3 Alliance Semiconductor P. 18 of 30 AS9C25256M2036L AS9C25128M2036L ® Collision timing waveform[2] tCYC[1] CLKA tCCO R/WA tAS tAH Aa Aa Am Aa Am Am Am Am Aa Don’t care [5] tCH[1] tCL[1] tWS tWH [4] ADDRESSA[3] Am Aa Am tSCOL COLA tRCOL tCYC[1] CLKB tWS tWH R/WB tAS tAH ADDRESSB[3] tCH[1] tCL[1] [4] Am Ab Ab Am Ab Am Am Am Am Ab Am Ab tSCOL COLB tRCOL Notes: 1. Parameters tCYC,tCH and tCL are different in Flow-through and Pipeline mode of operation and can be different for different ports (Refer AC Timing characteristics). 2. Chip Selected (CE0 = L and CE1 =H). True for both ports. 3. Address indicated is the Internal Address used and is dependent on the Address counter control inputs for that cycle. 4. “Am” refers to matched address. “Aa” and “Ab” refer to any other valid address. 5. During address collision the data validity is guaranteed only if tCCO is greater than the minimum specified (Refer AC timing characteristics). 9/30/04, v.1.3 Alliance Semiconductor P. 19 of 30 AS9C25256M2036L AS9C25128M2036L ® Depth and Width expansion AS9C25256M2036L/AS9C25128M2036L has two chipselects (one active high and other active low) for simple depth expansion. This permits easy upgrade from 256/128K depth to 512K/256K depth without extra logic. Two such parts can also be combined to obtain an expanded width of 72 bits or wider. Data Address DQ A[2] A[1] A[1] A[1] A[1] DQ DQ DQ Microprocessor Clock A[3] A[1] DQ A[3] A[1] DQ CE0 CE1 CE0 CE1 Clock CLK Controller R/W BE OE ADS INC RPT 256/128Kx36 DPSRAM CLK R/W BE OE ADS INC RPT 256/128Kx36 DPSRAM BANK 1 BANK 0 Notes: 1. A for AS9C25256M2036L, A for AS9C25128M2036L 2. A for AS9C25256M2036L, A for AS9C25128M2036L 3. A for AS9C25256M2036L, A for AS9C25128M2036L Timing waveform of multi device read[4,5,6] tCH CLK R/W tAS tAH A1 A2 A3 A4 A5 A6 A7 A8 tCYC[1] tCL Don’t care DQ Undefined tWS tWH A[0:17][2] A[18][3] tCDP DATA OUT [0:71] (BANK 0) [Pipeline Mode] tOHP Q1 Q2 tHZCP Q4 DATA OUT [0:71] (BANK 1) [Pipeline Mode] tLZCP Q3 tCDP Q5 tOHP Q6 tHZCP tCDF Q1 tOHF Q2 tHZCF Q4 tLZCP tCDF Q3 Q5 DATA OUT [0:71] (BANK 0) [Flow-through Mode] DATA OUT [0:71] (BANK 1) [Flow-through Mode] tLZCF tOHF Q6 tHZCF Read (Bank0) Read (Bank0) Read (Bank1) Read (Bank0) tLZCF Read (Bank1) Read (Bank1) Read (Bank0) Notes: 1. Parameters tCYC, tCH and tCL are different in Flow-through and Pipeline mode of operation (Refer AC Timing characteristics). 2. A for AS9C25256M2036L, A for AS9C25128M2036L 3. A for AS9C25256M2036L, A for AS9C25128M2036L 4. Refer to the above block diagram for the assumed setup. 5. One Bank is assumed to have two AS9C25256M2036L/AS9C25128M2036Ls combined to have an expanded width of 72 bits. Two such Banks are used for depth expansion. 6. All BEn's = L, Counter set in “Load” mode (ADS = L, INC = X, RPT = H), OE =L. 9/30/04, v.1.3 Alliance Semiconductor P. 20 of 30 AS9C25256M2036L AS9C25128M2036L ® Snooze mode Snooze mode is a low-current, power-down mode in which the corresponding port is deselected and its current is reduced to a very low value. Both ports are equipped with independent SNOOZE inputs (ZZ). During Snooze mode, all inputs of the port except ZZ are internally disabled and all its Outputs go to High-Z. ZZ is an asynchronous, active HIGH input that causes the selected port to enter Snooze mode. If both ports go into Snooze mode, the device is deselected and current is reduced to IZZ. When ZZA and ZZB become a logic HIGH, IZZ is guaranteed after the setup time tSCZZ is met. Any READ or WRITE operation pending when the port enters Snooze mode is not guaranteed to complete. Therefore, Snooze mode must not be initiated until valid pending operations are completed. Similarly during the time tRCZZ, when the port is transitioning out of snooze mode, only DESELECT cycles should be given. Snooze mode electrical characteristics Description SNOOZE MODE Current ZZ active to input ignored ZZ inactive to input sampled ZZ active to enter Snooze Current ZZ inactive to exit Snooze Current Conditions ZZA = ZZB >= VIH Symbol IZZ tSCZZ tRCZZ tSIZZ tRIZZ Min 15 2 0 Max 18 2 2 Units mA cycle cycle cycle cycle Snooze mode timing waveform[1,3] Don’t care tCYC CLK CE[2,4] tCES tCEH tCH tCL Undefined ZZ tSIZZ ISupply tSCZZ INPUTS (Except ZZ) OUTPUTS[5] Valid IZZ tRIZZ tRCZZ ZZ recovery cycles Valid ZZ setup cycles tHZC High-Z tLZC (Qout) Notes: 1. During Snooze mode, all dynamic inputs are disabled (except JTAG inputs). During JTAG operations, ZZx must be held Low in order to capture the parallel inputs of the boundary scan register. All static inputs (i.e. PL/FTx,OPTx) and ZZx themselves are not affected during snooze mode. 2. CE is an internal signal. CE = H implies 'Chip is Deselected' (CE0 = H or CE1 =L), CE = L implies 'Chip is Selected' (CE0 = L and CE1 =H). 3. All timings are same for Port A and Port B. 4. Minimum of two deselect cycles should be given before asserting snooze and minimum of two deselect cycles should be given after de-asserting snooze to guarantee data integrity. 5. Select cycles indicated before and after Snooze are Read cycles. They can also be Write cycles. 9/30/04, v.1.3 Alliance Semiconductor P. 21 of 30 AS9C25256M2036L AS9C25128M2036L ® AC test conditions Input Pulse Level (Address and Controls) Input Pulse Levels (I/Os) Input Rise/Fall Times Input Timing Reference Levels Output Reference levels Output Load (for tLZC, tHZC, tLZOE, tHZOE) Output Load (for all other measurements) GND to 3.0V/GND to 2.4V GND to 3.0V/GND to 2.4V 2V/ns 1.5V/1.25V 1.5V/1.25V Fig. C Fig. B Thevenin equivalent: +3.0/2.4 V 90% GND 10% 90% 10% DOUT Z0 = 50 Ω 50 Ω VL = 1.5/1.25 V 10 pF* 353Ω / 1538Ω +3.3/2.5 V; 319Ω / 1667Ω Figure A: Input Waveform Figure B: Output Load (A) 5 pF* GND Figure C: Output Load (B) * Including scope and jig capacitance 9/30/04, v.1.3 Alliance Semiconductor P. 22 of 30 AS9C25256M2036L AS9C25128M2036L ® IEEE 1149.1 Serial boundary scan (JTAG) The SRAM incorporates a serial boundary scan Test Access Port (TAP). All JTAG pins operate using JEDEC standard 2.5V I/O logic levels. In order to operate the device without using the JTAG feature, all JTAG pins may be left unconnected. On power-up, the device will start in a reset state which will not interfere with normal device operation. TAP Controller block diagram 0 Bypass Register TDI Selection Circuitry 3 2 10 Instruction Register 31 30 29 . . . 2 1 0 Identification Register x[1] Selection Circuitry TDO . . . . . 2 10 Boundary Scan Register1 TCK TMS TAP Controller Note: 1. x = 149 JTAG timing waveform tJCYC tJCH TEST CLK TCK tJIS tJIH TMS/TDI tJCD TDO tJOH tJCL Don’t care Undefined tJRS TRST tJRR 9/30/04, v.1.3 Alliance Semiconductor P. 23 of 30 AS9C25256M2036L AS9C25128M2036L ® TAP AC electrical characteristics[2] Description Clock Clock cycle time Clock frequency Clock high time Clock low time Output Times TCK low to TDO unknown TCK low to TDO valid Setup Times TMS/TDI setup Capture setup Hold Times TMS/TDI hold Capture hold Reset Times JTAG Reset JTAG Reset Recovery tJRS tJRR 50 50 ns ns tJCH[1] tJIH 10 10 ns ns tJIS tJCS 10 10 ns ns [1] Symbol tJCYC fJTAG tJCH tJCL tJOH tJCD Min 100 40 40 0 - Max 10 20 Units ns MHz ns ns ns ns Notes: 1. tJCS and tJCH refer to the setup and hold time requirements of latching data from the boundary scan register. 2. Test conditions are specified using the load in the figure TAP AC output load equivalent. TAP AC test conditions & output load equivalent Input pulse levels Input rise and fall times Input timing reference levels Output reference levels Test load termination supply voltage Vss to 2.5V 1V/ns 1.25V 1.25V 1.25V TDO ZO=50Ω 50Ω 20pF 1.25V TAP DC electrical characteristics and operating conditions (VDD=2.5V ± 100 mV) Description Input high (logic 1) voltage Input low (logic 0) voltage Input leakage current Output leakage current Output low voltage Output low voltage Output high voltage Output high voltage Symbol VIH VIL |ILI| |ILO| VOLC VOLT VOHC VOHT VDD = Max; 0V < VIN < VDD Outputs disabled, 0V < VOUT < VDDQ (DQx) IOLC = 100µA IOLT = 2mA IOHC = -100µA IOHT = -2mA 2.1 1.7 Conditions Min 1.7 -0.3 0 0 Max VDD + 0.3 0.7 10 10 0.2 0.7 Units V V µA µA V V V V 9/30/04, v.1.3 Alliance Semiconductor P. 24 of 30 AS9C25256M2036L AS9C25128M2036L ® Identification register definitions Instruction field Revision number (31:28) Device depth (27:12) JEDEC ID code (11:1) Indicator Bit (0) Value TBD TBD 00001010010 1 Description Version Number ALSC part number Manufacturer Identity Code (ALSC) ID Register presence indicator Scan register sizes Register name Instruction Register (IR) Bypass Register (BYR) Identification Register (IDR) Boundary Scan Register (BSR) Bit size 4 1 32 150 Instruction codes Instruction EXTEST SAMPLE/PRELOAD IDCODE CLAMP HIGHZ RESERVED BYPASS Code 0000 0001 0010 0011 0100 1111 Description Forces contents of the BSR onto the device outputs. Samples the I/O ring contents. Preloads test data into the BSR. Loads the IDR with the vendor ID code and places the register between TDI and TDO. Forces contents of the BSR onto the device outputs. Forces all device 2-state and 3-state outputs to High-Z. Places the BYR between TDI and TDO. Selected Reg BSR BSR IDR BYR BYR BYR BYR 0101 - 1110 Reserved states. Do not use. 9/30/04, v.1.3 Alliance Semiconductor P. 25 of 30 AS9C25256M2036L AS9C25128M2036L ® Package Diagram: 256-ball Ball Grid Array (BGA) All measurements are in mm. Min A B C D E F G H I J 0.40 0.50 0.70 0.35 Typ 1.00 16.95 17.00 17.05 15.00 16.95 17.00 17.05 15.00 0.36 0.50 1.60 0.60 Max A1 corner index Top View Bottom View 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 A B C D E F G H J K L M N P R T D J A B C oooooooooooooooo + oooooooooooooooo oooooooooooooooo + oooooooooooooooo + oooooooooooooooo oooooooooooooooo oooooooooooooooo oooooooooooooooo oooooooooooooooo oooooooooooooooo oooooooooooooooo oooooooooooooooo oooooooooooooooo oooooooooooooooo oooooooooooooooo oooooooooooooooo + + ++ A E 0.35 Z A B C D E F G H J K L M N P R T D oooooooooooooooo 0.70 0.36 0.35 ~ 0.50 1.60 MAX F 0.20 Z G H oo oo I / 0.50±0.10 (256X) Ø 0.25 M Z X Y Ø 0.15 M Z Side View Detail of Solder Ball 9/30/04, v.1.3 Alliance Semiconductor P. 26 of 30 AS9C25256M2036L AS9C25128M2036L ® Package Diagram: 208-ball fine pitch Ball Grid Array (fpBGA) All measurements are in mm. Min A B C D E F G H I J 0.40 0.45 0.70 0.25 Typ 0.80 14.95 15.00 15.05 12.80 14.95 15.00 15.05 12.80 0.26 0.40 1.40 0.50 Max A1 corner index Top View Bottom View 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 A B C D E F G H J K L M N P R T U D J 0.70 A B C ooooooooooooooooo + ooooooooooooooooo ooooooooooooooooo + ooooooooooooooooo + oooo oooo oooo oooo oooo oooo oooo oooo oooo oooo oooo oooo oooo oooo oooo oooo oooo oooo ooooooooooooooooo ooooooooooooooooo ooooooooooooooooo ooooooooooooooooo + ++ + A E 0.20 Z A B C D E F G H J K L M N P R T U ooooooooooooooooo 0.26 0.25 ~ 0.40 1.40 MAX F 0.15 Z G H oo oo D I / 0.45±0.05 (208X) Ø 0.15 M Z X Y Ø 0.08 M Z Side View Detail of Solder Ball 9/30/04, v.1.3 Alliance Semiconductor P. 27 of 30 AS9C25256M2036L AS9C25128M2036L ® Package Diagram: 208-pin Plastic Quad Flat Pack (PQFP) PQFP Min Typ Max A1 0.25 A2 3.20 3.32 3.60 b 0.17 0.20 0.27 c 0.11 0.15 0.23 D 28.00 nominal E 28.00 nominal e 0.50 nominal Hd 31.20 nominal He 31.20 nominal L 0.73 0.88 1.03 L1 1.60 nominal α 0° 7° Dimensions in millimeters Hd D b e He E c α L1 L A1 A2 9/30/04, v.1.3 Alliance Semiconductor P. 28 of 30 AS9C25256M2036L AS9C25128M2036L ® Ordering Information Package & Width 256K X 36 BGA X 36 fpBGA X 36 PQFP X 36 128K X 36 BGA X 36 fpBGA X 36 PQFP X 36 AS9C25128M2036L - 250BC AS9C25128M2036L - 250BI AS9C25128M2036L - 250FC AS9C25128M2036L - 250FI AS9C25128M2036L - 250PC AS9C25128M2036L - 250PI AS9C25128M2036L - 200BC AS9C25128M2036L - 200BI AS9C25128M2036L - 200FC AS9C25128M2036L - 200FI AS9C25128M2036L - 200PC AS9C25128M2036L - 200PI AS9C25128M2036L -166BC AS9C25128M2036L - 166BI AS9C25128M2036L - 166FC AS9C25128M2036L - 166FI AS9C25128M2036L - 166PC AS9C25128M2036L - 166PI AS9C25128M2036L - 133BC AS9C25128M2036L - 133BI AS9C25128M2036L - 133FC AS9C25128M2036L - 133FI AS9C25128M2036L - 133PC AS9C25128M2036L - 133PI AS9C25256M2036L - 250BC AS9C25256M2036L - 250BI AS9C25256M2036L - 250FC AS9C25256M2036L - 250FI AS9C25256M2036L - 250PC AS9C25256M2036L - 250PI AS9C25256M2036L - 200BC AS9C25256M2036L - 200BI AS9C25256M2036L - 200FC AS9C25256M2036L - 200FI AS9C25256M2036L - 200PC AS9C25256M2036L - 200PI AS9C25256M2036L -166BC AS9C25256M2036L - 166BI AS9C25256M2036L - 166FC AS9C25256M2036L - 166FI AS9C25256M2036L - 166PC AS9C25256M2036L - 166PI AS9C25256M2036L - 133BC AS9C25256M2036L - 133BI AS9C25256M2036L - 133FC AS9C25256M2036L - 133FI AS9C25256M2036L - 133PC AS9C25256M2036L - 133PI -250 -200 -166 -133 Part Numbering Guide AS 1 9C 2 25 3 256 4 M20 5 36 6 L 7 -XXX 8 P or B or F 9 C/I 10 1. Alliance Semiconductor prefix 2. Speciality Memory 3. Operating Voltage: 25 - VDD = 2.5V 4. Device depth: 256 - 256K; 128 - 128K 5. M20 - Multiport - 2port, SSRAM, DCD 6. I/O width - 36 7. I/O interface: L - LVTTL 8. Clock speed (MHz) 9. Package Type: P - PQFP, B - BGA, F - fpBGA 10. Operating Temperature: C - Commercial (00C to 700C); I -Industrial (-400C to 850C) 9/30/04, v.1.3 Alliance Semiconductor P. 29 of 30 ® AS9C25256M2036L AS9C25128M2036L ® Alliance Semiconductor Corporation 2575, Augustine Drive, Santa Clara, CA 95054 Tel: 408 - 855 - 4900 Fax: 408 - 855 - 4999 www.alsc.com Copyright © Alliance Semiconductor All Rights Reserved Preliminary Information Part Number: AS9C25256M2036L AS9C25128M2036L Document Version: v.1.3 © Copyright 2003 Alliance Semiconductor Corporation. All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered trademarks of Alliance. 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