AM29LV160MT50EI

Am29LV160M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL016A supersedes Am29LV160M and is the factory-recommended migration path. Please refer to the S29GL016A datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only. The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal data sheet improvement and are noted in the document revision summary. For More Information Please contact your local sales office for additional information about Spansion memory solutions. Publication Number 25974 Revision B Amendment 5 Issue Date January 31, 2007 THIS PAGE LEFT INTENTIONALLY BLANK. Am29LV160M 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBitTM 3.0 Volt-only Boot Sector Flash Memory This product has been retired and is not available for designs. For new and current designs, S29GL016A supersedes Am29LV160M and is the factory-recommended migration path. Please refer to the S29GL016A datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only. Distinctive Characteristics Architectural Advantages Single power supply operation — 3 V for read, erase, and program operations Manufactured on 0.23 µm MirrorBit process technology — Fully compatible with Am29LV160D device TM Low power consumption (typical values at 5 MHz) — 400 nA standby mode current — 15 mA read current — 40 mA program/erase current — 400 nA Automatic Sleep mode current Package options — 48-ball Fine-pitch BGA — 64-ball Fortified BGA — 48-pin TSOP Secured Silicon Sector region — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence — May be programmed and locked at the factory or by the customer Flexible sector architecture — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirtyone 64 Kbyte sectors (byte mode) — One 8 Kword, two 4 Kword, one 16 Kword, and thirtyone 32 Kword sectors (word mode) Compatibility with JEDEC standards — Provides pinout and software compatibility for singlepower supply flash, and superior inadvertent write protection Top or bottom boot block configurations available Minimum 100,000 erase cycle guarantee per sector 20-year data retention at 125°C Software Features — Program Suspend & Resume: read other sectors before programming operation is completed — Erase Suspend & Resume: read/program other sectors before an erase operation is completed — Data# polling & toggle bits provide status — Unlock Bypass Program command reduces overall multiple-word programming time — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices Hardware Features — Sector Protection: hardware-level method of preventing write operations within a sector — Temporary Sector Unprotect: VID-level method of changing code in locked sectors — Hardware reset input (RESET#) resets device — Ready/Busy# output (RY/BY#) indicates program or erase cycle completion Performance Characteristics High performance — Access times as fast as 70 ns — 0.7 s typical sector erase time Publication Number 25974 Revision B Amendment 5 Issue Date January 31, 2007 This Data Sheet states AMD’s current specifications regarding the Products described herein. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Data Sheet General Description The Am29LV160M is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in a 48-ball Fine-pitch BGA, 64-ball Fortified BGA, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. The device requires only a single 3.0 volt power supply for both read and write functions, designed to be programmed in-system with the standard system 3.0 volt VCC supply. The device can also be programmed in standard EPROM programmers. The device offers access times of 70, 85, 90, and 100 ns. To eliminate bus contention the device contains separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. The device is entirely command set compatible with the JEDEC single-powersupply Flash standard. Commands are written to the device using standard microprocessor write timing. Write cycles also internally latch addresses and data needed for the programming and erase operations. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Device programming and erasure are initiated through command sequences. Once a program or erase operation starts, the host system need only poll the DQ7 (Data# Polling) or DQ6 (toggle) status bits or monitor the Ready/Busy# (RY/BY#) output to determine whether the operation is complete. To facilitate programming, an Unlock Bypass mode reduces command sequence overhead by requiring only two write cycles to program data instead of four. Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of sectors of memory. This can be achieved in-system or via programming equipment. The Erase Suspend/Erase Resume feature allows the host system to pause an erase operation in a given sector to read or program any other sector and then complete the erase operation. The Program Suspend/Program Resume feature enables the host system to pause a program operation in a given sector to read any other sector and then complete the program operation. The hardware RESET# pin terminates any operation in progress and resets the device, after which it is then ready for a new operation. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the host system to read boot-up firmware from the Flash memory device. The device reduces power consumption in the standby mode when it detects specific voltage levels on CE# and RESET#, or when addresses are stable for a specified period of time. The Secured Silicon Sector provides a 128-word/256-byte area for code or data that can be permanently protected. Once this sector is protected, no further changes within the sector can occur. MirrorBit flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via hot-hole assisted erase. The data is programmed using hot electron injection. 2 Am29LV160M 25974B5 January 31, 2007 Data Sheet Table of Contents Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 5 Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 9 Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 10 Table 1. Am29LV160M Device Bus Operations .......................10 DQ7: Data# Polling .............................................................................. 33 Figure 7. Data# Polling Algorithm ....................................... 34 RY/BY#: Ready/Busy# ..........................................................................34 DQ6: Toggle Bit I .................................................................................. 35 DQ2: Toggle Bit II ................................................................................. 35 Reading Toggle Bits DQ6/DQ2 ........................................................36 Figure 8. Toggle Bit Algorithm ............................................ 37 Word/Byte Configuration .................................................................. 10 Requirements for Reading Array Data ........................................... 10 Writing Commands/Command Sequences .....................................11 Program and Erase Operation Status ...............................................11 Standby Mode ...........................................................................................11 Automatic Sleep Mode .........................................................................12 RESET#: Hardware Reset Pin .............................................................12 Output Disable Mode ...........................................................................12 Table 2. Sector Address Tables (Am29LV160MT) ...................13 Table 3. Sector Address Tables (Am29LV160MB) ...................14 DQ5: Exceeded Timing Limits .......................................................... 37 DQ3: Sector Erase Timer ...................................................................38 Table 12. Write Operation Status ........................................ 38 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . .39 Figure 9. Maximum Negative Overshoot Waveform ............... 39 Figure 10. Maximum Positive Overshoot Waveform ............... 39 Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 39 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 40 Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Figure 11. Test Setup........................................................ 41 Table 13. Test Specifications .............................................. 41 Figure 12. Input Waveforms and Measurement Levels ........... 41 Autoselect Mode ....................................................................................15 Table 4. Autoselect Codes (High Voltage Method) ..................15 Sector Protection/Unprotection .......................................................15 Temporary Sector Unprotect ............................................................16 Figure 1. Temporary Sector Unprotect Operation................... 16 Figure 2. In-System Single High Voltage Sector Protect/ Unprotect Algorithms ........................................................ 17 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . .42 Read Operations ...................................................................................42 Figure 13. Read Operations Timings.................................... 42 Hardware Reset (RESET#) .................................................................43 Figure 14. RESET# Timings ............................................... 43 Secured Silicon Sector Flash Memory Region .............................. 18 Table 5. Secured Silicon Sector Addressing ...........................18 Word/Byte Configuration (BYTE#) ..............................................44 Figure 15. BYTE# Timings for Read Operations..................... 44 Figure 16. BYTE# Timings for Write Operations .................... 44 Customer Lockable: Secured Silicon Sector NOT Programmed or Protected At the Factory .............................................................. 18 Figure 3. Secured Silicon Sector Protect Verify ...................... 19 Erase/Program Operations ................................................................45 Figure 17. Program Operation Timings ................................ Figure 18. Chip/Sector Erase Operation Timings ................... Figure 19. Data# Polling Timings (During Embedded Algorithms) .......................................... Figure 20. Toggle Bit Timings (During Embedded Algorithms) .......................................... Figure 21. DQ2 vs. DQ6 for Erase and Erase Suspend Operations ................................................. Figure 22. Temporary Sector Unprotect/Timing Diagram........ Figure 23. Sector Protect/Unprotect Timing Diagram ............. Figure 24. Alternate CE# Controlled Write Operation Timings . 46 47 48 48 49 49 50 52 Common Flash Memory Interface (CFI) ....................................... 20 Table 6. CFI Query Identification String ...............................20 Table 7. System Interface String .........................................21 Table 8. Device Geometry Definition ....................................21 Table 9. Primary Vendor-Specific Extended Query .................22 Hardware Data Protection ................................................................22 Low VCC Write Inhibit ........................................................................22 Write Pulse “Glitch” Protection ......................................................22 Logical Inhibit ..........................................................................................23 Power-Up Write Inhibit ......................................................................23 Command Definitions . . . . . . . . . . . . . . . . . . . . . . 23 Reading Array Data ..............................................................................23 Reset Command ....................................................................................23 Autoselect Command Sequence ......................................................24 Word/Byte Program Command Sequence ...................................24 Unlock Bypass Command Sequence ...............................................25 Figure 4. Program Operation .............................................. 26 Chip Erase Command Sequence ......................................................26 Sector Erase Command Sequence ...................................................27 Erase Suspend/Erase Resume Commands .....................................27 Figure 5. Erase Operation .................................................. 29 Erase and Programming Performance . . . . . . . . .53 Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 53 TSOP Pin and BGA Package Capacitance . . . . . 53 Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . .54 TS 048—48-Pin Standard TSOP ......................................................54 TSR048—48-Pin Reverse TSOP ......................................................55 FBA048—48-Ball Fine-Pitch Ball Grid Array (BGA) 6 x 8 mm Package .................................................................................56 LAA064—64-Ball Fortified Ball Grid Array (BGA) 13 x 11 mm Package ................................................................................57 Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 58 Program Suspend/Program Resume Command Sequence .......29 Figure 6. Program Suspend/Program Resume ....................... 30 Command Definitions Tables .............................................................31 Write Operation Status . . . . . . . . . . . . . . . . . . . . 33 January 31, 2007 25974B5 Am29LV160M 3 Data Sheet Product Selector Guide Family Part Number Regulated Voltage Range: VCC = 3.0–3.6 V Speed Option Full Voltage Range: VCC = 2.7–3.6 V Max access time, ns (tACC) Max CE# access time, ns (tCE) Max OE# access time, ns (tOE) Notes: 1. See “AC Characteristics” on page 42 for full specifications. 2. Contact sales office or representative for availability and ordering information. Am29LV160M 70R (Note 2) 85 (Note 2) 70 70 30 85 85 35 90 90 90 35 100 100 100 50 Block Diagram RY/BY# VCC VSS RESET# Sector Switches Erase Voltage Generator Input/Output Buffers DQ15–DQ0 (A-1) WE# BYTE# State Control Command Register PGM Voltage Generator Chip Enable Output Enable Logic STB Data Latch CE# OE# STB VCC Detector Timer Address Latch Y-Decoder Y-Gating X-Decoder Cell Matrix A19–A0 4 Am29LV160M 25974B5 January 31, 2007 Data Sheet Connection Diagrams A15 A14 A13 A12 A11 A10 A9 A8 A19 NC WE# RESET# NC NC RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE# VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 Standard TSOP A16 BYTE# VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Reverse TSOP 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A15 A14 A13 A12 A11 A10 A9 A8 A19 NC WE# RESET# NC NC RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 January 31, 2007 25974B5 Am29LV160M 5 Data Sheet Connection Diagrams Fine-pitch BGA Top View, Balls Facing Down A6 A13 A5 A9 A4 WE# A3 RY/BY# A2 A7 A1 A3 B6 A12 B5 A8 B4 RESET# B3 NC B2 A17 B1 A4 C6 A14 C5 A10 C4 NC C3 A18 C2 A6 C1 A2 D6 A15 D5 A11 D4 A19 D3 NC D2 A5 D1 A1 E6 A16 E5 DQ7 E4 DQ5 E3 DQ2 E2 DQ0 E1 A0 F6 G6 H6 VSS H5 DQ6 H4 DQ4 H3 DQ3 H2 DQ1 H1 VSS BYTE# DQ15/A-1 F5 DQ14 F4 DQ12 F3 DQ10 F2 DQ8 F1 CE# G5 DQ13 G4 VCC G3 DQ11 G2 DQ9 G1 OE# 6 Am29LV160M 25974B5 January 31, 2007 Data Sheet Connection Diagrams 64-Ball Fortified BGA Top View, Balls Facing Down A8 NC A7 A13 A6 A9 A5 WE# A4 RY/BY# A3 A7 A2 A3 A1 NC B8 NC B7 A12 B6 A8 B5 RESET# B4 NC B3 A17 B2 A4 B1 NC C8 NC C7 A14 C6 A10 C5 NC C4 A18 C3 A6 C2 A2 C1 NC D8 NC D7 A15 D6 A11 D5 A19 D4 NC D3 A5 D2 A1 D1 NC E8 VSS E7 A16 E6 DQ7 E5 DQ5 E4 DQ2 E3 DQ0 E2 A0 E1 NC F8 NC F7 G8 NC G7 H8 NC H7 VSS H6 DQ6 H5 DQ4 H4 DQ3 H3 DQ1 H2 VSS H1 NC BYTE# DQ15/A-1 F6 DQ14 F5 DQ12 F4 DQ10 F3 DQ8 F2 CE# F1 NC G6 DQ13 G5 VCC G4 DQ11 G3 DQ9 G2 OE# G1 NC Special Package Handling Instructions Special handling is required for Flash Memory products in molded packages (TSOP, BGA, SSOP, PDIP, PLCC). The package and/or data integrity may be compromised if the package body is exposed to temperatures above 150°C for prolonged periods of time. January 31, 2007 25974B5 Am29LV160M 7 Data Sheet Pin Configuration A19–A0 DQ14–DQ0 DQ15/A-1 BYTE# CE# OE# WE# RESET# RY/BY# VCC VSS NC = = = = = = = = = = 20 addresses 15 data inputs/outputs DQ15 (data input/output, word mode), A-1 (LSB address input, byte mode) Selects 8-bit or 16-bit mode Chip enable Output enable Write enable Hardware reset pin Ready/Busy output 3.0 volt-only single power supply (see Product Selector Guide for speed options and voltage supply tolerances) Device ground Pin not connected internally = = Logic Symbol 20 A19–A0 DQ15–DQ0 (A-1) CE# OE# WE# RESET# BYTE# RY/BY# 16 or 8 8 Am29LV160M 25974B5 January 31, 2007 Data Sheet Ordering Information Standard Products Spansion standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the elements below. Am29LV160M T 100 E I TEMPERATURE RANGE I E F WA PC = Industrial (–40°C to +85°C) = 48-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 048) = 48-Pin Thin Small Outline Package (TSOP) Reverse Pinout (TSR048) = 48-ball Fine-Pitch Ball Grid Array (FBGA) 0.80 mm pitch, 6 x 8 mm package (FBA048) = 64-ball Fortified Ball Grid Array (BGA) 1.0 mm pitch, 13 x 11 mm package (LAA064) PACKAGE TYPE SPEED OPTION See Product Selector Guide and Valid Combinations BOOT CODE SECTOR ARCHITECTURE T B = = Top sector Bottom sector DEVICE NUMBER/DESCRIPTION Am29LV160M 16 Megabit (2M x 8-Bit/1M x 16-Bit) MirrorBitTM Flash Memory 3.0 Volt-only Read, Program, and Erase Valid Combinations for TSOP Packages Am29LV160MT90, Am29LV160MB90 Am29LV160MT100, Am29LV160MB100 Access Time (ns) 90 EI, FI 100 VCC Voltage Range Valid Combinations for FBGA Packages Order Number Am29LV160MT90, Am29LV160MB90 WAI PCI WAI PCI Package Marking L160MT90VI, L160MB90VI L160MT90PI, L160MB90PI L160MT10VI, L160MB10VI L160MT10PI, L160MB10PI Access Time (ns) VCC Voltage Range 2.7–3.6 V 90 2.7– 3.6 V 100 Am29LV160MT100, Am29LV160MB100 Note: For 70R and 85 speed options shown in product selector guide, contact a sales office or representative for availability and ordering information. Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult your local sales office to confirm availability of specific valid combinations and to check on newly released combinations. January 31, 2007 25974B5 Am29LV160M 9 Data Sheet Device Bus Operations This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory location. The register is composed of latches that store the commands, along with the address and data information needed to execute the command. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. Table 1 lists the device bus operations, the inputs and control levels they require, and the resulting output. The following subsections describe each of these operations in further detail. Table 1. Am29LV160M Device Bus Operations DQ8–DQ15 Addresses (Note 1) AIN AIN X X X Sector Address, A6 = L, A1 = H, A0 = L Sector Address, A6 = H, A1 = H, A0 = L AIN DQ0– DQ7 DOUT DIN High-Z High-Z High-Z DIN BYTE# = VIH DOUT DIN High-Z High-Z High-Z X BYTE# = VIL DQ8–DQ14 = High-Z, DQ15 = A-1 High-Z High-Z High-Z X Operation Read Write Standby Output Disable Reset Sector Protect (Note 2) CE# L L VCC ± 0.3 V L X L OE# WE# RESET# L H X H X H H L X H X L H H VCC ± 0.3 V H L VID Sector Unprotect (Note 2) Temporary Sector Unprotect L X H X L X VID VID DIN DIN X DIN X High-Z Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5 V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out Notes: 1. Addresses are A19:A0 in word mode (BYTE# = VIH), A19:A-1 in byte mode (BYTE# = VIL). 2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See “Sector Protection/Unprotection” on page 15. Word/Byte Configuration The BYTE# pin controls whether the device data I/O pins DQ15–DQ0 operate in the byte or word configuration. If the BYTE# pin is set at logic ‘1’, the device is in word configuration, DQ15–DQ0 are active and controlled by CE# and OE#. If the BYTE# pin is set at logic ‘0’, the device is in byte configuration, and only data I/O pins DQ0–DQ7 are active and controlled by CE# and OE#. The data I/ O pins DQ8–DQ14 are tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function. Requirements for Reading Array Data To read array data from the outputs, the system must drive the CE# and OE# pins to VIL. CE# is the power control and selects the device. OE# is the output control and gates array data to the output pins. WE# should remain at VIH. The BYTE# pin determines whether the device outputs array data in words or bytes. 10 Am29LV160M 25974B5 January 31, 2007 Data Sheet The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. The device remains enabled for read access until the command register contents are altered. See “Reading Array Data” on page 23 for more information. Refer to the table “Read Operations” on page 42 for timing specifications and to Figure 13, on page 42 for the timing diagram. ICC1 in the table “CMOS Compatible” on page 40 represents the active current specification for reading array data. Writing Commands/Command Sequences To write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH. For program operations, the BYTE# pin determines whether the device accepts program data in bytes or words. Refer to “Word/Byte Configuration” on page 10 for more information. The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the Unlock Bypass mode, only two write cycles are required to program a word or byte, instead of four. The “Word/Byte Program Command Sequence” on page 24 contains details on programming data to the device using both standard and Unlock Bypass command sequences. An erase operation can erase one sector, multiple sectors, or the entire device. Table 2, on page 13 and Table 3, on page 14 indicate the address space that each sector occupies. A “sector address” consists of the address bits required to uniquely select a sector. The sector “Command Definitions” on page 23 contains details on erasing a sector or the entire chip, or suspending/resuming the erase operation. After the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on DQ7–DQ0. Standard read cycle timings apply in this mode. Refer to the sections “Autoselect Mode” on page 15 and “Autoselect Command Sequence” on page 24 for more information. ICC2 in the DC Characteristics table represents the active current specification for the write mode. The section “AC Characteristics” on page 42 contains timing specification tables and timing diagrams for write operations. Program and Erase Operation Status During an erase or program operation, the system may check the status of the operation by reading the status bits on DQ7–DQ0. Standard read cycle timings and ICC read specifications apply. Refer to “Write Operation Status” on page 33 for more information, and to “AC Characteristics” on page 42 for timing diagrams. Standby Mode When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. January 31, 2007 25974B5 Am29LV160M 11 Data Sheet The device enters the CMOS standby mode when the CE# and RESET# pins are both held at VCC ± 0.3 V. (Note that this is a more restricted voltage range than VIH.) If CE# and RESET# are held at VIH, but not within VCC ± 0.3 V, the device is in the standby mode, but the standby current is greater. The device requires standard access time (tCE) for read access when the device is in either of these standby modes, before it is ready to read data. If the device is deselected during erasure or programming, the device draws active current until the operation is completed. In the table “CMOS Compatible” on page 40, ICC3 and ICC4 represents the standby current specification. Automatic Sleep Mode The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. ICC4 i n the table “CMOS Compatible” on page 40 represents the automatic sleep mode current specification. RESET#: Hardware Reset Pin The RESET# pin provides a hardware method of resetting the device to reading array data. When the system drives the RESET# pin to VIL for at least a period of tRP, the device immediately terminates any operation in progress, tristates all data output pins, and ignores all read/write attempts for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity. Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS±0.3 V, the device draws CMOS standby current (ICC4). If RESET# is held at VIL but not within VSS±0.3 V, the standby current is greater. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash memory, enabling the system to read the boot-up firmware from the Flash memory. If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY# to determine whether the reset operation is complete. If RESET# is asserted when a program or erase operation is not executing (RY/BY# pin is “1”), the reset operation is completed within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after the RESET# pin returns to VIH. Refer to the “AC Characteristics” on page 42 for RESET# parameters and to Figure 14, on page 43 for the timing diagram. Output Disable Mode When the OE# input is at VIH, output from the device is disabled. The output pins are placed in the high impedance state. 12 Am29LV160M 25974B5 January 31, 2007 Data Sheet Table 2. Sector Address Tables (Am29LV160MT) Sector Size (Kbytes/ Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 32/16 8/4 8/4 16/8 Address Range (in hexadecimal) Byte Mode (x8) 000000–00FFFF 010000–01FFFF 020000–02FFFF 030000–03FFFF 040000–04FFFF 050000–05FFFF 060000–06FFFF 070000–07FFFF 080000–08FFFF 090000–09FFFF 0A0000–0AFFFF 0B0000–0BFFFF 0C0000–0CFFFF 0D0000–0DFFFF 0E0000–0EFFFF 0F0000–0FFFFF 100000–10FFFF 110000–11FFFF 120000–12FFFF 130000–13FFFF 140000–14FFFF 150000–15FFFF 160000–16FFFF 170000–17FFFF 180000–18FFFF 190000–19FFFF 1A0000–1AFFFF 1B0000–1BFFFF 1C0000–1CFFFF 1D0000–1DFFFF 1E0000–1EFFFF 1F0000–1F7FFF 1F8000–1F9FFF 1FA000–1FBFFF 1FC000–1FFFFF Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 A19 A18 A17 A16 A15 A14 A13 A12 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 1 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 1 1 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 1 1 1 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X 0 1 1 1 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X 0 0 1 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X 0 1 X Word Mode (x16) 000000–007FFF 008000–00FFFF 010000–017FFF 018000–01FFFF 020000–027FFF 028000–02FFFF 030000–037FFF 038000–03FFFF 040000–047FFF 048000–04FFFF 050000–057FFF 058000–05FFFF 060000–067FFF 068000–06FFFF 070000–077FFF 078000–07FFFF 080000–087FFF 088000–08FFFF 090000–097FFF 098000–09FFFF 0A0000–0A7FFF 0A8000–AFFFF 0B0000–0B7FFF 0B8000–0BFFFF 0C0000–0C7FFF 0C8000–0CFFFF 0D0000–0D7FFF 0D8000–0DFFFF 0E0000–0E7FFF 0E8000–0EFFFF 0F0000–0F7FFF 0F8000–0FBFFF 0FC000–0FCFFF 0FD000–0FDFFF 0FE000–0FFFFF Note: Address range is A19:A-1 in byte mode and A19:A0 in word mode. See “Word/Byte Configuration” on page 10 section. January 31, 2007 25974B5 Am29LV160M 13 Data Sheet Table 3. Sector Address Tables (Am29LV160MB) Sector Size (Kbytes/ Kwords) 16/8 8/4 8/4 32/16 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 Address Range (in hexadecimal) Byte Mode (x8) 000000–003FFF 004000–005FFF 006000–007FFF 008000–00FFFF 010000–01FFFF 020000–02FFFF 030000–03FFFF 040000–04FFFF 050000–05FFFF 060000–06FFFF 070000–07FFFF 080000–08FFFF 090000–09FFFF 0A0000–0AFFFF 0B0000–0BFFFF 0C0000–0CFFFF 0D0000–0DFFFF 0E0000–0EFFFF 0F0000–0FFFFF 100000–10FFFF 110000–11FFFF 120000–12FFFF 130000–13FFFF 140000–14FFFF 150000–15FFFF 160000–16FFFF 170000–17FFFF 180000–18FFFF 190000–19FFFF 1A0000–1AFFFF 1B0000–1BFFFF 1C0000–1CFFFF 1D0000–1DFFFF 1E0000–1EFFFF 1F0000–1FFFFF Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 A19 A18 A17 A16 A15 A14 A13 A12 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 0 0 1 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X 0 1 1 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X 0 1 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X Word Mode (x16) 000000–001FFF 002000–002FFF 003000–003FFF 004000–007FFF 008000–00FFFF 010000–017FFF 018000–01FFFF 020000–027FFF 028000–02FFFF 030000–037FFF 038000–03FFFF 040000–047FFF 048000–04FFFF 050000–057FFF 058000–05FFFF 060000–067FFF 068000–06FFFF 070000–077FFF 078000–07FFFF 080000–087FFF 088000–08FFFF 090000–097FFF 098000–09FFFF 0A0000–0A7FFF 0A8000–0AFFFF 0B0000–0B7FFF 0B8000–0BFFFF 0C0000–0C7FFF 0C8000–0CFFFF 0D0000–0D7FFF 0D8000–0DFFFF 0E0000–0E7FFF 0E8000–0EFFFF 0F0000–0F7FFF 0F8000–0FFFFF Note: Address range is A19:A-1 in byte mode and A19:A0 in word mode. See the “Word/Byte Configuration” on page 10 section. 14 Am29LV160M 25974B5 January 31, 2007 Data Sheet Autoselect Mode The autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on DQ7–DQ0. This mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. However, the autoselect codes can also be accessed in-system through the command register. When using programming equipment, the autoselect mode requires VID (11.5 V to 12.5 V) on address pin A9. Address pins A6, A1, and A0 must be as shown in Table 4. In addition, when verifying sector protection, the sector address must appear on the appropriate highest order address bits (see Table 2, on page 13 and Table 3, on page 14). Table 3 shows the remaining address bits that are don’t care. When all necessary bits are set as required, the programming equipment may then read the corresponding identifier code on DQ7-DQ0. To access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in Table 10, on page 31 and Table 11, on page 32. This method does not require VID. See “Command Definitions” on page 23 for details on using the autoselect mode. Table 4. Mod e Autoselect Codes (High Voltage Method) A8 to A7 X X A5 to A2 X X DQ8 to DQ15 X 22h X X VID L L H X 22h X X VID X L X L H X X DQ7 to DQ0 01h (AMD) C4h C4h 49h 49h 01h (protected) 00h (unprotected) 83h (factory locked 03h (not factory locked) Description Manufacturer ID Device ID: Am29LV160M (Top Boot Block) Device ID: Am29LV160M (Bottom Boot Block) Sector Protection Verification CE# L A19 A11 to to OE# WE# A12 A10 L L L L L H H H H H X X A9 VID A6 L A1 L A0 L Word Byte Word Byte L L L L L L H SA X VID X L X H L X Secured Silicon Sector Indicator Bit (DQ7) L L H X X VID X H X L H X L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care. Note: The autoselect codes may also be accessed in-system via command sequences. See Table 10, on page 31 and Table 11, on page 32. Sector Protection/Unprotection The hardware sector protection feature disables both program and erase operations in any sector. The hardware sector unprotection feature re-enables both program and erase operations in previously protected sectors. The device is normally shipped with all sectors unprotected. However, the ExpressFlash™ Service offers the option of programming and protecting sectors at January 31, 2007 25974B5 Am29LV160M 15 Data Sheet the factory prior to shipping the device. Contact a sales office or representative for details. It is possible to determine whether a sector is protected or unprotected. See “Autoselect Mode” on page 15 for details. Sector protection and unprotection requires VID on the RESET# pin only, and can be implemented either in-system or via programming equipment. Figure 2, on page 17 shows the algorithms and Figure 23, on page 50 shows the timing diagram. This method uses standard microprocessor bus cycle timing. For sector unprotect, all unprotected sectors must first be protected prior to the first sector unprotect write cycle. Temporary Sector Unprotect This feature allows temporary unprotection of previously protected sectors to change data in-system. The Sector Unprotect mode is activated by setting the RESET# pin to VID. During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. Once VID is removed from the RESET# pin, all the previously protected sectors are protected again. Figure 2, on page 17 shows the algorithm, and Figure 22, on page 49 shows the timing diagrams, for this feature. START RESET# = VID (Note 1) Perform Erase or Program Operations RESET# = VIH Temporary Sector Unprotect Completed (Note 2) Notes: 1. All protected sectors unprotected. 2. All previously protected sectors are protected once again. Figure 1. Temporary Sector Unprotect Operation 16 Am29LV160M 25974B5 January 31, 2007 Data Sheet START PLSCNT = 1 RESET# = VID Wait 1 ms Protect all sectors: The indicated portion of the sector protect algorithm must be performed for all unprotected sectors prior to issuing the first sector unprotect address START PLSCNT = 1 RESET# = VID Wait 1 ms Temporary Sector Unprotect Mode No First Write Cycle = 60h? Yes Set up sector address Sector Protect: Write 60h to sector address with A6 = 0, A1 = 1, A0 = 0 Wait 150 µs Verify Sector Protect: Write 40h to sector address with A6 = 0, A1 = 1, A0 = 0 Read from sector address with A6 = 0, A1 = 1, A0 = 0 No No First Write Cycle = 60h? Yes All sectors protected? Yes Set up first sector address Sector Unprotect: Write 60h to sector address with A6 = 1, A1 = 1, A0 = 0 Temporary Sector Unprotect Mode Increment PLSCNT Reset PLSCNT = 1 Wait 15 ms Verify Sector Unprotect: Write 40h to sector address with A6 = 1, A1 = 1, A0 = 0 No No PLSCNT = 25? Yes Data = 01h? Increment PLSCNT Yes No Yes No Read from sector address with A6 = 1, A1 = 1, A0 = 0 Set up next sector address Device failed Protect another sector? No Remove VID from RESET# PLSCNT = 1000? Yes Data = 00h? Yes Device failed Write reset command Last sector verified? Yes No In-System Single High Voltage Sector Protect Algorithm Sector Protect complete In-System Single High Voltage Sector Unprotect Algorithm Remove VID from RESET# Write reset command Sector Unprotect complete Figure 2. January 31, 2007 25974B5 In-System Single High Voltage Sector Protect/Unprotect Algorithms Am29LV160M 17 Data Sheet Secured Silicon Sector Flash Memory Region The Secured Silicon Sector feature provides a Flash memory region that enables permanent part identification through an Electronic Serial Number (ESN). The Secured Silicon Sector is 256 bytes in length, and uses a Secured Silicon Sector Indicator Bit (DQ7) to indicate whether or not the Secured Silicon Sector is locked when shipped from the factory. This bit is permanently set at the factory and cannot be changed, which prevents cloning of a factory locked part. This ensures the security of the ESN once the product is shipped to the field. The device is offered with the Secured Silicon Sector either customer lockable (standard shipping option) or factory locked (contact a sales office or representative for ordering information). The customer-lockable version is shipped with the Secured Silicon Sector unprotected, allowing customers to program the sector after receiving the device. The customer-lockable version also has the Secured Silicon Sector Indicator Bit permanently set to a “0.” The factory-locked version is always protected when shipped from the factory, and has the Secured Silicon Sector Indicator Bit permanently set to a “1.” Thus, the Secured Silicon Sector Indicator Bit prevents customer-lockable devices from being used to replace devices that are factory locked. Note that the ACC function and unlock bypass modes are not available when the Secured Silicon Sector is enabled. The Secured Silicon sector address space in this device is allocated as follows: Table 5. Secured Silicon Sector Addressing Customer Lockable ESN Factory Locked ExpressFlash Factory Locked ESN or determined by customer Determined by customer Secured Silicon Sector Address Range x16 0F8000h– 0F8007h 0F8008h– 0F807Fh x8 1F0000h– 1F000Fh 1F0010h– 1F00FFh Determined by customer ESN Unavailable The system accesses the Secured Silicon Sector through a command sequence (see “Enter Secured Silicon Sector/Exit Secured Silicon Sector Command Sequence”). After the system writes the Enter Secured Silicon Sector command sequence, it may read the Secured Silicon Sector by using the addresses given in Table 5. This mode of operation continues until the system issues the Exit Secured Silicon Sector command sequence, or until power is removed from the device. On power-up, or following a hardware reset, the device reverts to sending commands to sector SA0. Customer Lockable: Secured Silicon Sector NOT Programmed or Protected At the Factory Unless otherwise specified, the device is shipped such that the customer may program and protect the 256-byte Secured Silicon sector. The system may program the Secured Silicon Sector using the write-buffer, accelerated and/or unlock bypass methods, in addition to the standard programming command sequence. See “Command Definitions” on page 23. Programming and protecting the Secured Silicon Sector must be used with caution since, once protected, there is no procedure available for unprotecting the Secured Silicon Sector area and none of the bits in the Secured Silicon Sector memory space can be modified in any way. 18 Am29LV160M 25974B5 January 31, 2007 Data Sheet The Secured Silicon Sector area can be protected using one of the following procedures: Write the three-cycle Enter Secured Silicon Sector Region command sequence, and then follow the in-system sector protect algorithm as shown in Figure 2, on page 17, except that RESET# may be at either VIH or VID. This allows in-system protection of the Secured Silicon Sector without raising any device pin to a high voltage. Note that this method is only applicable to the Secured Silicon Sector. To verify the protect/unprotect status of the Secured Silicon Sector, follow the algorithm shown in Figure 3. Once the Secured Silicon Sector is programmed, locked and verified, the system must write the Exit Secured Silicon Sector Region command sequence to return to reading and writing within the remainder of the array. Factory Locked: Secured Silicon Sector Programmed and Protected At the Factory In devices with an ESN, the Secured Silicon Sector is protected when the device is shipped from the factory. The Secured Silicon Sector cannot be modified in any way. An ESN Factory Locked device has a 16-byte random ESN at addresses 0F8000h–0F8007h. Please contact your local sales office or representative for details on ordering ESN Factory Locked devices. Customers may opt to have their code programmed by the manufacturer through the ExpressFlash service (Express Flash Factory Locked). The devices are then shipped from the factory with the Secured Silicon Sector permanently locked. Contact an sales office or representative for details on using the ExpressFlash service. START RESET# = VIH or VID Wait 1 ms Write 60h to any address If data = 00h, SecSi Sector is unprotected. If data = 01h, SecSi Sector is protected. Remove VIH or VID from RESET# Write reset command Write 40h to SecSi Sector address with A6 = 0, A1 = 1, A0 = 0 Read from SecSi Sector address with A6 = 0, A1 = 1, A0 = 0 SecSi Sector Protect Verify complete Figure 3. Secured Silicon Sector Protect Verify January 31, 2007 25974B5 Am29LV160M 19 Data Sheet Common Flash Memory Interface (CFI) The Common Flash Interface (CFI) specification outlines device and host system software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors can standardize their existing interfaces for long-term compatibility. This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h in word mode (or address AAh in byte mode), any time the device is ready to read array data. The system can read CFI information at the addresses given in Table 6, on page 20 to Table 9, on page 22. In word mode, the upper address bits (A7–MSB) must be all zeros. To terminate reading CFI data, the system must write the reset command. The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query mode, and the system can read CFI data at the addresses given in Table 6, on page 20 to Table 9, on page 22. The system must write the reset command to return the device to the read/reset mode. For further information, please refer to the CFI Specification and CFI Publication 100, available online at http://www.amd.com/flash/cfi. Alternatively, contact an sales office or representative for copies of these documents. Table 6. Addresses (Word Mode) 10h 11h 12h 13h 14h 15h 16h 17h 18h 19h 1Ah Addresses (Byte Mode) 20h 22h 24h 26h 28h 2Ah 2Ch 2Eh 30h 32h 34h Data 0051h 0052h 0059h 0002h 0000h 0040h 0000h 0000h 0000h 0000h 0000h CFI Query Identification String Description Query Unique ASCII string “QRY” Primary OEM Command Set Address for Primary Extended Table Alternate OEM Command Set (00h = none exists) Address for Alternate OEM Extended Table (00h = none exists) 20 Am29LV160M 25974B5 January 31, 2007 Data Sheet Table 7. Addresses (Word Mode) 1Bh 1Ch 1Dh 1Eh 1Fh 20h 21h 22h 23h 24h 25h 26h Addresses (Byte Mode) 36h 38h 3Ah 3Ch 3Eh 40h 42h 44h 46h 48h 4Ah 4Ch Data 0027h 0036h 0000h 0000h 0007h 0000h 000Ah 0000h 0001h 0000h 0004h 0000h System Interface String Description VCC Min. (write/erase) D7–D4: volt, D3–D0: 100 millivolt VCC Max. (write/erase) D7–D4: volt, D3–D0: 100 millivolt VPP Min. voltage (00h = no VPP pin present) VPP Max. voltage (00h = no VPP pin present) Typical timeout per single byte/word write 2N µs Typical timeout for Min. size buffer write 2N µs (00h = not supported) Typical timeout per individual block erase 2N ms Typical timeout for full chip erase 2N ms (00h = not supported) Max. timeout for byte/word write 2N times typical Max. timeout for buffer write 2N times typical Max. timeout per individual block erase 2N times typical Max. timeout for full chip erase 2N times typical (00h = not supported) Table 8. Addresses (Word Mode) 27h 28h 29h 2Ah 2Bh 2Ch 2Dh 2Eh 2Fh 30h 31h 32h 33h 34h 35h 36h 37h 38h 39h 3Ah 3Bh 3Ch Addresses (Byte Mode) 4Eh 50h 52h 54h 56h 58h 5Ah 5Ch 5Eh 60h 62h 64h 66h 68h 6Ah 6Ch 6Eh 70h 72h 74h 76h 78h Data 0015h 0002h 0000h 0000h 0000h 0004h 0000h 0000h 0040h 0000h 0001h 0000h 0020h 0000h 0000h 0000h 0080h 0000h 001Eh 0000h 0000h 0001h Device Geometry Definition Description Device Size = 2N byte Flash Device Interface description (refer to CFI publication 100) Max. number of byte in multi-byte write = 2N (00h = not supported) Number of Erase Block Regions within device Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100) Erase Block Region 2 Information Erase Block Region 3 Information Erase Block Region 4 Information January 31, 2007 25974B5 Am29LV160M 21 Data Sheet Table 9. Addresses (Word Mode) 40h 41h 42h 43h 44h Addresses (Byte Mode) 80h 82h 84h 86h 88h Primary Vendor-Specific Extended Query Data Description Query-unique ASCII string “PRI” Major version number, ASCII Minor version number, ASCII Address Sensitive Unlock (Bit 1–0) 0b = Required, 1b = Not Required Process Technology (Bits 7–2) 0010b = 0.23 µm MirrorBit Erase Suspend 0 = Not Supported, 1 = To Read Only, 2 = To Read & Write Sector Protect 0 = Not Supported, X = Number of sectors in per group Sector Temporary Unprotect 00 = Not Supported, 01 = Supported Sector Protect/Unprotect scheme 01 = 29F040 mode, 02 = 29F016 mode, 03 = 29F400 mode, 04 = 29LV800A mode Simultaneous Operation 00 = Not Supported, 01 = Supported Burst Mode Type 00 = Not Supported, 01 = Supported Page Mode Type 00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page 0050h 0052h 0049h 0031h 0033h 45h 8Ah 0008h 46h 47h 48h 8Ch 8Eh 90h 0002h 0001h 0001h 49h 92h 0004h 4Ah 4Bh 4Ch 94h 96h 98h 0000h 0000h 0000h Hardware Data Protection The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to Table 10, on page 31 and Table 11, on page 32 for command definitions). In addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during VCC power-up and power-down transitions, or from system noise. Low VCC Write Inhibit When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets. Subsequent writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control pins to prevent unintentional writes when VCC is greater than VLKO. Write Pulse “Glitch” Protection Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle. 22 Am29LV160M 25974B5 January 31, 2007 Data Sheet Logical Inhibit Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a logical one. Power-Up Write Inhibit If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to reading array data on power-up. Command Definitions Writing specific address and data commands or sequences into the command register initiates device operations. Table 10, on page 31 and Table 11, on page 32 define the valid register command sequences. Note that writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. A reset command is then required to set the device for the next operation. All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on the rising edge of WE# or CE#, whichever happens first. Refer to the appropriate timing diagrams in “AC Characteristics” on page 42. Reading Array Data The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. The device is also ready to read array data after completing an Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the device enters the Erase Suspend mode. The system can read array data using the standard read timings, except that if it reads at an address within erase-suspended sectors, the device outputs status data. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See “Erase Suspend/Erase Resume Commands” on page 27 for more information on this mode. The system must issue the reset command to re-enable the device for reading array data if DQ5 goes high, or while in the autoselect mode. See the “Reset Command” section, next. See also “Requirements for Reading Array Data” on page 10 for more information. The table “Read Operations” on page 42s provides the read parameters, and Figure 13, on page 42 shows the timing diagram. Reset Command Writing the reset command to the device resets the device to reading array data. Address bits are don’t care for this command. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the device to reading array data. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the device to reading array data (also applies to programming in Erase Suspend mode). Once January 31, 2007 25974B5 Am29LV160M 23 Data Sheet programming begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to reading array data (also applies to autoselect during Erase Suspend). If DQ5 goes high during a program or erase operation, writing the reset command returns the device to reading array data (also applies during Erase Suspend). Autoselect Command Sequence The autoselect command sequence allows the host system to access the manufacturer and devices codes, and determine whether or not a sector is protected. Table 10, on page 31 and Table 11, on page 32 show the address and data requirements. This method is an alternative to that shown in Table 4, on page 15, which is intended for PROM programmers and requires VID on address bit A9. The autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect command. The device then enters the autoselect mode, and the system may read at any address any number of times, without initiating another command sequence. A read cycle at address XX00h retrieves the manufacturer code. A read cycle at address XX01h returns the device code. A read cycle containing a sector address (SA) and the address XX02h in word mode (or XX04h in byte mode) returns XX01h if that sector is protected, or 00h if it is unprotected. Refer to Table 2, on page 13 and Table 3, on page 14 for valid sector addresses. The system must write the reset command to exit the autoselect mode and return to reading array data. Word/Byte Program Command Sequence The system may program the device by word or byte, depending on the state of the BYTE# pin. Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically generates the program pulses and verifies the programmed cell margin. Table 10, on page 31 and Table 11, on page 32 show the address and data requirements for the byte program command sequence. Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when a program operation is in progress. When the Embedded Program algorithm is complete, the device then returns to reading array data and addresses are no longer latched. The system can determine the status of the program operation by using DQ7, DQ6, or RY/BY#. See “Write Operation Status” on page 33 for information on these status bits. Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the programming operation. The Byte Program command sequence should be reinitiated once the device resets to reading array data, to ensure data integrity. Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from a “0” back to a “1”. Attempting to do so may halt the operation and set DQ5 to “1,” or cause the Data# Polling algorithm to 24 Am29LV160M 25974B5 January 31, 2007 Data Sheet indicate the operation was successful. However, a succeeding read shows that the data is still “0”. Only erase operations can convert a “0” to a “1”. Unlock Bypass Command Sequence The unlock bypass feature allows the system to program bytes or words to the device faster than using the standard program command sequence. The unlock bypass command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. The device then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is required to program in this mode. The first cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the program address and data. Additional data is programmed in the same manner. This mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total programming time. Table 10, on page 31 and Table 11, on page 32 show the requirements for the command sequence. During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the data 90h; the second cycle the data 00h. Addresses are don’t care for both cycles. The device then returns to reading array data. Figure 4, on page 26 illustrates the algorithm for the program operation. See the table “Erase/Program Operations” on page 45 for parameters, and Figure 17, on page 46 for timing diagrams. January 31, 2007 25974B5 Am29LV160M 25 Data Sheet START Write Program Command Sequence Embedded Program algorithm in progress Data Poll from System Verify Data? No Yes Increment Address No Last Address? Yes Programming Completed Notes: See Tables 10 and 11 for program command sequence. Figure 4. Program Operation Chip Erase Command Sequence Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. Table 10, on page 31 and Table 11, on page 32 show the address and data requirements for the chip erase command sequence. Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when an erase operation is in progress. Any commands written to the chip during the Embedded Erase algorithm are ignored. Note that a hardware reset during the chip erase operation immediately terminates the operation. The Chip Erase command sequence should be reinitiated once the device returns to reading array data, to ensure data integrity. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. See “Autoselect Command Sequence” on page 24 for information on these status bits. When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. 26 Am29LV160M 25974B5 January 31, 2007 Data Sheet Figure 5, on page 29 illustrates the algorithm for the erase operation. See the table “Erase/Program Operations” on page 45 for parameters, and Figure 18, on page 47 for timing diagrams. Sector Erase Command Sequence Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the address of the sector to be erased, and the sector erase command. Table 10, on page 31 and Table 11, on page 32 show the address and data requirements for the sector erase command sequence. Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when an erase operation is in progress. The device does not require the system to preprogram the memory prior to erase. The Embedded Erase algorithm automatically programs and verifies the sector for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. After the command sequence is written, a sector erase time-out of 50 µs begins. During the time-out period, additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles must be less than 50 µs, otherwise the last address and command might not be accepted, and erasure may begin. It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is written. If the time between additional sector erase commands can be assumed to be less than 50 µs, the system need not monitor DQ3. Any command other than Sector Erase or Erase Suspend during the time-out period resets the device to reading array data. The system must rewrite the command sequence and any additional sector addresses and commands. The system can monitor DQ3 to determine if the sector erase timer timed out. (See “DQ3: Sector Erase Timer” on page 38.) The time-out begins from the rising edge of the final WE# pulse in the command sequence. Once the sector erase operation starts, only the Erase Suspend command is valid. All other commands are ignored. Note that a hardware reset during the sector erase operation immediately terminates the operation. The Sector Erase command sequence should be reinitiated once the device returns to reading array data, to ensure data integrity. When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. (Refer to “Write Operation Status” on page 33 for information on these status bits.) Figure 5, on page 29 illustrates the algorithm for the erase operation. Refer to the table “Erase/Program Operations” on page 45 for parameters, and Figure 18, on page 47 for timing diagrams. Erase Suspend/Erase Resume Commands The Erase Suspend command allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. This command is valid only during the sector erase operation, including the 50 µs time-out period during the sector erase command sequence. The Erase January 31, 2007 25974B5 Am29LV160M 27 Data Sheet Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. Writing the Erase Suspend command during the Sector Erase time-out immediately terminates the time-out period and suspends the erase operation. Addresses are “don’t-cares” when writing the Erase Suspend command. When the Erase Suspend command is written during a sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. After the erase operation is suspended, the system can read array data from or program data to any sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Normal read and write timings and command definitions apply. Reading at any address within erase-suspended sectors produces status data on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. See “Write Operation Status” on page 33 for information on these status bits. After an erase-suspended program operation is complete, the system can once again read array data within non-suspended sectors. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard program operation. See “Write Operation Status” on page 33 for more information. The system may also write the autoselect command sequence when the device is in the Erase Suspend mode. The device allows reading autoselect codes even at addresses within erasing sectors, since the codes are not stored in the memory array. When the device exits the autoselect mode, the device reverts to the Erase Suspend mode, and is ready for another valid operation. See “Autoselect Command Sequence” on page 24 for more information. The system must write the Erase Resume command (address bits are “don’t care”) to exit the erase suspend mode and continue the sector erase operation. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the device resumes erasing. Note: During an erase operation, this flash device performs multiple internal operations which are invisible to the system. When an erase operation is suspended, any of the internal operations that were not fully completed must be restarted. As such, if this flash device is continually issued suspend/resume commands in rapid succession, erase progress is impeded as a function of the number of suspends. The result is a longer cumulative erase time than without suspends. Note that the additional suspends do not affect device reliability or future performance. In most systems rapid erase/suspend activity occurs only briefly. In such cases, erase performance is not significantly impacted. 28 Am29LV160M 25974B5 January 31, 2007 Data Sheet START Write Erase Command Sequence Data Poll from System Embedded Erase algorithm in progress No Data = FFh? Yes Erasure Completed Notes: 1. See Table 10, on page 31 and Table 11, on page 32 for erase command sequence. 2. See “DQ3: Sector Erase Timer” on page 38 for more information. Figure 5. Erase Operation Program Suspend/Program Resume Command Sequence The Program Suspend command allows the system to interrupt a programming operation so that data can be read from any non-suspended sector. When the Program Suspend command is written during a programming process, the device halts the program operation within 15 μ s maximum (5 μ s typical) and updates the status bits. Addresses are not required when writing the Program Suspend command. After the programming operation is suspended, the system can read array data from any non-suspended sector. The Program Suspend command may also be issued during a programming operation while an erase is suspended. In this case, data may be read from any addresses not in Erase Suspend or Program Suspend. If a read is needed from the Secured Silicon Sector area (One-time Program area), then user must use the proper command sequences to enter and exit this region. The system may also write the autoselect command sequence when the device is in the Program Suspend mode. The system can read as many autoselect codes as required. When the device exits the autoselect mode, the device reverts to the Program Suspend mode, and is ready for another valid operation. See Autoselect Command Sequence for more information. After the Program Resume command is written, the device reverts to programming. The system can determine the status of the program operation using the January 31, 2007 25974B5 Am29LV160M 29 Data Sheet DQ7 or DQ6 status bits, just as in the standard program operation. See “Write Operation Status” on page 33 for more information. The system must write the Program Resume command (address bits are don’t care) to exit the Program Suspend mode and continue the programming operation. Further writes of the Resume command are ignored. Another Program Suspend command can be written after the device resumes programming. Program Operation Sequence in Progress Write address/data XXXh/B0h Write Program Suspend Command Sequence Command is also valid for Erase-suspended-program operations Wait 15 ms Read data as required Autoselect and SecSi Sector read operations are also allowed Data cannot be read from erase- or program-suspended sectors No Done reading? Yes Write address/data XXXh/30h Write Program Resume Command Sequence Device reverts to operation prior to Program Suspend Figure 6. Program Suspend/Program Resume 30 Am29LV160M 25974B5 January 31, 2007 Data Sheet Command Definitions Tables Table 10. Cycles Command Sequence (Note 1) Read (Note 5) Reset (Note 6) Autoselect (Note 7) Manufacturer ID Device ID, Top Boot (Note 8) Device ID, Bottom Boot (Note 8) Secured Silicon Sector Factory Protect (Note 15) Sector Group Protect Verify (Note 9) Command Definitions (x16 Mode, BYTE# = VIH) Bus Cycles (Notes 2–5) First Second Addr Data Third Addr Data Fourth Addr Data Fifth Addr Data Sixth Addr Data Addr RA XXX 555 555 555 555 555 555 555 555 555 XXX XXX 555 555 XXX XXX 55 Data RD F0 AA AA AA AA AA AA AA AA AA A0 90 AA AA B0 30 98 1 1 4 6 6 4 4 3 4 4 3 2 2 6 6 1 1 1 2AA 2AA 2AA 2AA 2AA 2AA 2AA 2AA 2AA PA XXX 2AA 2AA 55 55 55 55 55 55 55 55 55 PD 00 55 55 555 555 555 555 555 555 555 555 555 90 90 90 90 90 88 90 A0 20 X00 X01 X01 X03 (SA)X02 0001 22C4 2249 83/03 00/01 Enter Secured Silicon Sector Region Exit Secured Silicon Sector Region Program Unlock Bypass Unlock Bypass Program (Note 10) Unlock Bypass Reset (Note 11) Chip Erase Sector Erase Program/Erase Suspend (Note 12) Program/Erase Resume (Note 13) CFI Query (Note 14) XXX PA 00 PD 555 555 80 80 555 555 AA AA 2AA 2AA 55 55 555 SA 10 30 Legend: X = Don’t care RA = Read Address of memory location to be read. RD = Read Data read from location RA during read operation. PA = Program Address. Addresses latch on falling edge of WE# or CE# pulse, whichever happens later. PD = Program Data for location PA. Data latches on rising edge of WE# or CE# pulse, whichever happens first. SA = Sector Address of sector to be verified (in autoselect mode) or erased. Address bits A19–A15 uniquely select any sector. Notes: 1. See Table 1, on page 10 for description of bus operations. 2. All values are in hexadecimal. 3. Shaded cells indicate read cycles. All others are write cycles. 4. During unlock and command cycles, when lower address bits are 555 or 2AA as shown in table, address bits above A11 and data bits above DQ7 are don’t care. 5. No unlock or command cycles required when device is in read mode. 6. Reset command is required to return to read mode (or to erase-suspend-read mode if previously in Erase Suspend) when device is in autoselect mode, or if DQ5 goes high while device is providing status information. 7. Fourth cycle of the autoselect command sequence is a read cycle. Data bits DQ15–DQ8 are don’t care. See “Autoselect Command Sequence” on page 24 for more information. 8. Device ID must be read in three cycles. 9. Data is 00h for an unprotected sector group and 01h for a protected sector group. 10. Unlock Bypass command is required prior to Unlock Bypass Program command. 11. Unlock Bypass Reset command is required to return to read mode when device is in unlock bypass mode. 12. System may read and program in non-erasing sectors, or enter autoselect mode, when in Erase Suspend mode. Erase Suspend command is valid only during a sector erase operation. 13. Erase Resume command is valid only during Erase Suspend mode. 14. Command is valid when device is ready to read array data or when device is in autoselect mode. 15. Data is 83h for factory locked and 03h for not factory locked. January 31, 2007 25974B5 Am29LV160M 31 Data Sheet Table 11. Cycles Command Sequence (Note 1) Read (Note 5) Reset (Note 6) Manufacturer ID Autoselect (Note 7) Device ID, Top Boot (Note 8) Device ID, Bottom Boot (Note 8) Secured Silicon Sector Factory Protect (Note 15) Sector Group Protect Verify (Note 9) Command Definitions (x8 Mode, BYTE# = VIL) Bus Cycles (Notes 2–5) First Second Addr Data Third Addr Data Fourth Addr Data Fifth Addr Data Sixth Addr Data Addr RA XXX AAA AAA AAA AAA AAA AAA AAA AAA AAA XXX XXX AAA AAA XXX XXX AA Data RD F0 AA AA AA AA AA AA AA AA AA A0 90 AA AA B0 30 98 1 1 4 6 6 4 4 3 4 4 3 2 2 6 6 1 1 1 555 555 555 555 555 555 555 555 555 PA XXX 555 555 55 55 55 55 55 55 55 55 55 PD 00 55 55 AAA AAA AAA AAA AAA AAA AAA AAA AAA 90 90 90 90 90 88 90 A0 20 X00 X02 X02 X06 (SA)X04 01 C4 49 83/03 00/01 Enter Secured Silicon Sector Region Exit Secured Silicon Sector Region Program Unlock Bypass Unlock Bypass Program (Note 10) Unlock Bypass Reset (Note 11) Chip Erase Sector Erase Program/Erase Suspend (Note 12) Program/Erase Resume (Note 13) CFI Query (Note 14) XXX PA 00 PD AAA AAA 80 80 AAA AAA AA AA 555 555 55 55 AAA SA 10 30 Legend: X = Don’t care RA = Read Address of memory location to be read. RD = Read Data read from location RA during read operation. PA = Program Address. Addresses latch on falling edge of WE# or CE# pulse, whichever happens later. PD = Program Data for location PA. Data latches on rising edge of WE# or CE# pulse, whichever happens first. SA = Sector Address of sector to be verified (in autoselect mode) or erased. Address bits A19–A15 uniquely select any sector. Notes: 1. See Table 1, on page 10 for description of bus operations. 2. All values are in hexadecimal. 3. Shaded cells indicate read cycles. All others are write cycles. 4. During unlock and command cycles, when lower address bits are 555 or AAA as shown in table, address bits above A11 are don’t care. 5. No unlock or command cycles required when device is in read mode. 6. Reset command is required to return to read mode (or to erase-suspend-read mode if previously in Erase Suspend) when device is in autoselect mode, or if DQ5 goes high while device is providing status information. 7. Fourth cycle of autoselect command sequence is a read cycle. Data bits DQ15–DQ8 are don’t care. See “Autoselect Command Sequence” on page 24 for more information. 8. Device ID must be read in three cycles. 9. Data is 00h for an unprotected sector group and 01h for a protected sector group. 10. Unlock Bypass command is required prior to Unlock Bypass Program command. 11. Unlock Bypass Reset command is required to return to read mode when device is in unlock bypass mode. 12. System may read and program in non-erasing sectors, or enter autoselect mode, when in Erase Suspend mode. Erase Suspend command is valid only during a sector erase operation. 13. Erase Resume command is valid only during Erase Suspend mode. 14. Command is valid when device is ready to read array data or when device is in autoselect mode. 15. Data is 83h for factory locked and 03h for not factory locked. 32 Am29LV160M 25974B5 January 31, 2007 Data Sheet Write Operation Status The device provides several bits to determine the status of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7, and RY/BY#. Table 12, on page 38 and the following subsections describe the functions of these bits. DQ7, RY/BY#, and DQ6 each offer a method for determining whether a program or erase operation is complete or in progress. These three bits are discussed first. DQ7: Data# Polling The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Algorithm is in progress or completed, or whether the device is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the program or erase command sequence. During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then the device returns to reading array data. During the Embedded Erase algorithm, Data# Polling produces a “0” on DQ7. When the Embedded Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data# Polling produces a “1” on DQ7. This is analogous to the complement/true datum output described for the Embedded Program algorithm: the erase function changes all the bits in a sector to “1”; prior to this, the device outputs the “complement,” or “0.” The system must provide an address within any of the sectors selected for erasure to read valid status information on DQ7. After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 µs, then the device returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. When the system detects DQ7 changes from the complement to true data, it can read valid data at DQ7–DQ0 on the following read cycles. This is because DQ7 may change asynchronously with DQ0–DQ6 while Output Enable (OE#) is ass e r t e d l o w. F i g u r e 1 9 , o n p a g e 4 8 , D a t a # Po l l i n g T i m i n g s (During Embedded Algorithms), illustrates this. Table 12, on page 38 shows the outputs for Data# Polling on DQ7. Figure 7, on page 34 shows the Data# Polling algorithm. January 31, 2007 25974B5 Am29LV160M 33 Data Sheet START Read DQ7–DQ0 Addr = VA DQ7 = Data? Yes No No DQ5 = 1? Yes Read DQ7–DQ0 Addr = VA DQ7 = Data? Yes No FAIL PASS Notes: 1. VA = Valid address for programming. During a sector erase operation, a valid address is an address within any sector selected for erasure. During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Figure 7. Data# Polling Algorithm RY/BY#: Ready/Busy# The RY/BY# is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a pull-up resistor to VCC. 34 Am29LV160M 25974B5 January 31, 2007 Data Sheet If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is high (Ready), the device is ready to read array data (including during the Erase Suspend mode), or is in the standby mode. Table 12, on page 38 shows the outputs for RY/BY#. Figure 13, on page 42, Figure 14, on page 43, Figure 17, on page 46 and Figure 18, on page 47 show RY/ BY# for read, reset, program, and erase operations, respectively. DQ6: Toggle Bit I Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause DQ6 to toggle. (The system may use either OE# or CE# to control the read cycles.) When the operation is complete, DQ6 stops toggling. After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 100 µs, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase-suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 (see the subsection on “DQ7: Data# Polling”). If a program address falls within a protected sector, DQ6 toggles for approximately 1 µs after the program command sequence is written, then returns to reading array data. DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete. Table 12, on page 38 shows the outputs for Toggle Bit I on DQ6. Figure 8, on page 37 shows the toggle bit algorithm in flowchart form, and the section “Reading Toggle Bits DQ6/DQ2” on page 36 explains the algorithm. Figure 20, on page 48 in the “AC Characteristics” section shows the toggle bit timing diagrams. Figure 21, on page 49 shows the differences between DQ2 and DQ6 in graphical form. See also the subsection on “DQ2: Toggle Bit II”. DQ2: Toggle Bit II The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the system reads at addresses within those sectors that were selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected January 31, 2007 25974B5 Am29LV160M 35 Data Sheet for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 12, on page 38 to compare outputs for DQ2 and DQ6. Figure 8, on page 37 shows the toggle bit algorithm in flowchart form, and the section “Reading Toggle Bits DQ6/DQ2” explains the algorithm. See also the “DQ6: Toggle Bit I” on page 35 subsection.Figure 20, on page 48 shows the toggle bit timing diagram. Figure 21, on page 49 shows the differences between DQ2 and DQ6 in graphical form. Reading Toggle Bits DQ6/DQ2 Refer to Figure 8, on page 37 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device completed the program or erase operation. The system can read array data on DQ7–DQ0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device successfully completed the program or erase operation. If it is still toggling, the device did not complete the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 did not go high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 8, on page 37). 36 Am29LV160M 25974B5 January 31, 2007 Data Sheet START Read DQ7–DQ0 Read DQ7–DQ0 (Note 1) Toggle Bit = Toggle? Yes No No DQ5 = 1? Yes Read DQ7–DQ0 Twice (Notes 1, 2) Toggle Bit = Toggle? No Yes Program/Erase Operation Not Complete, Write Reset Command Program/Erase Operation Complete Figure 8. Toggle Bit Algorithm Notes: 1. Read toggle bit twice to determine whether or not it is toggling. See text. 2. Recheck toggle bit because it may stop toggling as DQ5 changes to “1”. See text. DQ5: Exceeded Timing Limits DQ5 indicates whether the program or erase time exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a “1.” This is a failure condition that indicates the program or erase cycle was not successfully completed. The DQ5 failure condition may appear if the system tries to program a “1” to a location that is previously programmed to “0.” Only an erase operation can January 31, 2007 25974B5 Am29LV160M 37 Data Sheet change a “0” back to a “1.” Under this condition, the device halts the operation, and when the operation exceeds the timing limits, DQ5 produces a “1.” Under both these conditions, the system must issue the reset command to return the device to reading array data. DQ3: Sector Erase Timer After writing a sector erase command sequence, the system may read DQ3 to determine whether or not an erase operation starts. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase command. When the time-out is complete, DQ3 switches from “0” to “1.” The system may ignore DQ3 if the system can guarantee that the time between additional sector erase commands is always less than 50 μ s. See also the “Sector Erase Command Sequence” on page 27. After the sector erase command sequence is written, the system should read the status on DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure the device accepted the command sequence, and then read DQ3. If DQ3 is “1”, the internally controlled erase cycle started; all further commands (other than Erase Suspend) are ignored until the erase operation is complete. If DQ3 is “0”, the device accepts additional sector erase commands. To ensure the command is accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last command might not have been accepted. Table 12 shows the outputs for DQ3. Table 12. Write Operation Status DQ7 (Note 2) DQ7# 0 DQ5 (Note 1) 0 0 DQ2 (Note 2) No toggle Toggle Operation Standard Mode Program Suspend Mode Embedded Program Algorithm Embedded Erase Algorithm ProgramSuspend Read ProgramSuspended Sector Non-Program Suspended Sector DQ6 Toggle Toggle DQ3 N/A 1 RY/BY# 0 0 1 1 Invalid (not allowed) Data 1 Data DQ7# No toggle Data Toggle 0 Data 0 N/A Data N/A Toggle Data N/A Erase Suspend Mode Reading within Erase Suspended Sector Reading within Non-Erase Suspended Sector Erase-Suspend-Program 1 1 0 Notes: 1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation exceeds the maximum timing limits. See “DQ5: Exceeded Timing Limits” on page 37 for more information. 2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details. 38 Am29LV160M 25974B5 January 31, 2007 Data Sheet Absolute Maximum Ratings Storage Temperature, Plastic Packages . . . . . . . . . . . . . . . . .–65°C to +150°C Ambient Temperature with Power Applied . . . . . . . . . . . . . . .–65°C to +125°C Voltage with Respect to Ground VCC (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V A9, OE#, and RESET# (Note 2) . . . . . . . . . . . . . . . . –0.5 V to +12.5 V All other pins (Note 1) . . . . . . . . . . . . . . . . . . . . . –0.5 V to VCC+0.5 V Output Short Circuit Current (Note 3). . . . . . . . . . . . . . . . . . . . . . . . 200 mA Notes: 1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, input or I/O pins may overshoot VSS to –2.0 V for periods of up to 20 ns. See Figure 9. Maximum DC voltage on input or I/O pins is VCC +0.5 V. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 10. 2. Minimum DC input voltage on pins A9, OE#, and RESET# is -0.5 V. During voltage transitions, A9, OE#, and RESET# may overshoot VSS to –2.0 V for periods of up to 20 ns. See Figure 9. Maximum DC input voltage on pin A9 is +12.5 V which may overshoot to 14.0 V for periods up to 20 ns. 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. 20 ns +0.8 V –0.5 V –2.0 V 20 ns 20 ns VCC +2.0 V VCC +0.5 V 2.0 V 20 ns 20 ns 20 ns Figure 9. Maximum Negative Overshoot Waveform Figure 10. Maximum Positive Overshoot Waveform Operating Ranges Industrial (I) Devices Ambient Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C VCC Supply Voltages VCC for regulated voltage range . . . . . . . . . . . . . . . . . . . . . . . 3.0 V to 3.6 V VCC for full voltage range . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.7 V to 3.6 V Operating ranges define those limits between which the functionality of the device is guaranteed. January 31, 2007 25974B5 Am29LV160M 39 Data Sheet DC Characteristics CMOS Compatible Parameter ILI ILIT ILR Description Input Load Current A9 Input Load Current Reset Leakage Current Output Leakage Current Test Conditions VIN = VSS to VCC, VCC = VCC max VCC = VCC max; A9 = 12.5 V VCC = VCC max; RESET# = 12.5 V Min Typ Max ±1.0 35 35 Unit µA µA µA ILO VOUT = VSS to VCC, VCC = VCC max CE# = VIL, OE# = VIH, 5 MHz Byte Mode 1 MHz CE# = VIL, OE# = VIH, Word Mode 1 MHz CE# = VIL, OE# = VIH 5 MHz 15 2 15 2 40 0.4 0.8 0.4 –0.5 1.9 –0.5 1.9 VCC = 3.3 V IOL = 4.0 mA, VCC = VCC min IOH = -2.0 mA, VCC = VCC min IOH = -100 µA, VCC = VCC min 0.85 x VCC VCC–0.4 2.3 11.5 ±1.0 30 10 30 10 60 5 5 5 0.8 VCC + 0.5 0.3 x VIO VIO + 0.5 12.5 0.45 µA ICC1 VCC Active Read Current (Notes 1, 2) mA ICC2 ICC3 ICC4 ICC5 VIL1 VIH1 VIL2 VIH2 VID VOL VOH1 VOH2 VLKO VCC Active Write Current (Notes 2, 3, 5) mA µA µA µA V V V V V V V VCC Standby Current (Notes 2, 4) CE#, RESET# = VCC±0.3 V VCC Standby Current During Reset RESET# = VSS ± 0.3 V (Notes 2, 4) Automatic Sleep Mode (Notes 2, 4, 6) Input Low Voltage 1(6, 7) Input High Voltage 1 (6, 7) Input Low Voltage 2 (6, 8) Input High Voltage 2 (6, 8) Voltage for Autoselect and Temporary Sector Unprotect Output Low Voltage Output High Voltage Low VCC Lock-Out Voltage (Note 4) VIH = VCC ± 0.3 V; VIL = VSS ± 0.3 V 2.5 V Notes: 1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. Typical VCC is 3.0 V. 2. Maximum ICC specifications are tested with VCC = VCCmax. 3. ICC active while Embedded Erase or Embedded Program is in progress. 4. At extended temperature range (>+85°C), typical current is 5 µA and maximum current is 10 µA. 5. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. 6. Not 100% tested. 7. VCC voltage requirements. 8. VIO voltage requirements. 40 Am29LV160M 25974B5 January 31, 2007 Data Sheet Test Conditions 3.3 V Table 13. Test Condition Output Load Test Specifications 70R, 85 90, 100 1 TTL gate 30 5 0.0–3.0 1.5 1.5 30 pF ns V V V Unit Device Under Test CL 6.2 kΩ 2.7 kΩ Output Load Capacitance, CL (including jig capacitance) Input Rise and Fall Times Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels Note: Diodes are IN3064 or equivalent Figure 11. Test Setup Key to Switching Waveforms WAVEFORM INPUTS Steady Changing from H to L Changing from L to H Don’t Care, Any Change Permitted Does Not Apply Changing, State Unknown Center Line is High Impedance State (High Z) OUTPUTS 3.0 V 0.0 V Input 1.5 V Measurement Level 1.5 V Output Figure 12. Input Waveforms and Measurement Levels January 31, 2007 25974B5 Am29LV160M 41 Data Sheet AC Characteristics Read Operations Parameter JEDEC tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ Std tRC tACC tCE tOE tDF tDF tOEH Description Read Cycle Time (Note 1) Address to Output Delay Chip Enable to Output Delay Output Enable to Output Delay Chip Enable to Output High Z (Note 1) Output Enable to Output High Z (Note 1) Read Output Enable Hold Time (Note 1) Toggle and Data# Polling Output Hold Time From Addresses, CE# or OE#, Whichever Occurs First (Note 1) CE# = VIL OE# = VIL OE# = VIL Test Setup Min Max Max Max Max Max Min Min Min 70R 70 70 70 30 25 25 Speed Options 85 85 85 85 35 30 30 0 10 0 90 90 90 90 35 30 30 100 100 100 100 50 30 30 Unit ns ns ns ns ns ns ns ns ns tAXQX tOH Notes: 1. Not 100% tested. 2. See Figure 11, on page 41 and Table 13, on page 42 for test specifications. tRC Addresses CE# tOE tOEH WE# HIGH Z Outputs RESET# RY/BY# Output Valid tCE tOH HIGH Z tDF Addresses Stable tACC OE# 0V Figure 13. Read Operations Timings 42 Am29LV160M 25974B5 January 31, 2007 Data Sheet AC Characteristics Hardware Reset (RESET#) Parameter JEDEC Std tREADY tREADY tRP tRH tRPD tRB Description RESET# Pin Low (During Embedded Algorithms) to Read or Write (See Note) RESET# Pin Low (NOT During Embedded Algorithms) to Read or Write (See Note) RESET# Pulse Width RESET# High Time Before Read (See Note) RESET# Low to Standby Mode RY/BY# Recovery Time Test Setup Max Max Min Min Min Min All Speed Options 20 500 500 50 20 0 Unit µs ns ns ns µs ns Note: Not 100% tested. RY/BY# CE#, OE# tRH RESET# tRP tReady Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms tReady RY/BY# tRB CE#, OE# RESET# tRP Figure 14. RESET# Timings January 31, 2007 25974B5 Am29LV160M 43 Data Sheet AC Characteristics Word/Byte Configuration (BYTE#) Parameter JEDEC Std tELFL/tELFH tFLQZ tFHQV Description CE# to BYTE# Switching Low or High BYTE# Switching Low to Output HIGH Z BYTE# Switching High to Output Active Max Max Min 25 70 30 85 70R Speed Options 85 5 30 90 30 100 90 100 Unit ns ns ns CE# OE# BYTE# tELFL BYTE# Switching from word to byte mode DQ0–DQ14 Data Output (DQ0–DQ14) DQ15 Output tFLQZ Data Output (DQ0–DQ7) Address Input DQ15/A-1 tELFH BYTE# BYTE# Switching from byte to word mode DQ0–DQ14 Data Output (DQ0–DQ7) Address Input tFHQV Data Output (DQ0–DQ14) DQ15 Output DQ15/A-1 Figure 15. CE# BYTE# Timings for Read Operations The falling edge of the last WE# signal WE# BYTE# tSET (tAS) tHOLD (tAH) Figure 16. BYTE# Timings for Write Operations Note: Refer to the table “Erase/Program Operations” on page 45 for tAS and tAH specifications. 44 Am29LV160M 25974B5 January 31, 2007 Data Sheet AC Characteristics Erase/Program Operations Parameter JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX Std tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS tRB tBUSY tPOLL Notes: 1. Not 100% tested. Speed Options Description Write Cycle Time (Note 1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recovery Time Before Write (OE# High to WE# Low) CE# Setup Time CE# Hold Time Write Pulse Width Write Pulse Width High Programming Operation (Note 2) Sector Erase Operation (Note 2) VCC Setup Time (Note 1) Recovery Time from RY/BY# Program/Erase Valid to RY/BY# Delay Program Valid Before Status Polling (Note 3) Byte Word Min Min Min Min Min Min Min Min Min Min Min Typ Typ Typ Min Min Max Max 35 35 30 12 12 0.7 50 0 90 4 45 35 45 45 0 0 0 0 0 35 50 70R 70 85 85 0 45 45 50 50 90 90 100 100 Unit ns ns ns ns ns ns ns ns ns ns ns µs sec µs ns ns µs 2. See the “Erase and Programming Performance” on page 59 section for more information. 3. When using the program suspend/resume feature, if the suspend command is issued within tPOLL, tPOLL must be fully re-applied upon resuming the programming operation. If the suspend command is issued after tPOLL, tPOLL is not required again prior to reading the status bits upon resuming. January 31, 2007 25974B5 Am29LV160M 45 Data Sheet AC Characteristics Program Command Sequence (last two cycles) tWC Addresses 555h tAS PA tAH CE# OE# tPOLL tWP WE# tCS tDS Data tDH PD tBUSY RY/BY# Status DOUT tRB tWPH tWHWH1 PA PA Read Status Data (last two cycles) tCH A0h VCC tVCS Notes: 1. PA = program address, PD = program data, DOUT is the true data at the program address. 2. Illustration shows device in word mode. Figure 17. Program Operation Timings 46 Am29LV160M 25974B5 January 31, 2007 Data Sheet AC Characteristics Erase Command Sequence (last two cycles) tWC Addresses 2AAh tAS SA 555h for chip erase Read Status Data VA tAH VA CE# tCH tWP WE# tCS tDS tDH Data 55h 30h 10 for Chip Erase In Progress Complete OE# tWPH tWHWH2 tBUSY RY/BY# tVCS VCC tRB Notes: 1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”). 2. Illustration shows device in word mode. Figure 18. Chip/Sector Erase Operation Timings January 31, 2007 25974B5 Am29LV160M 47 Data Sheet AC Characteristics tRC Addresses tPOLL CE# tCH OE# tOEH WE# tOH DQ15 and DQ7 Complement Complement True Valid Data High Z VA tACC tCE VA VA tOE tDF DQ14–DQ8, DQ6–DQ0 tBUSY RY/BY# Status Data Status Data True Valid Data High Z Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle. Figure 19. Data# Polling Timings (During Embedded Algorithms) tRC Addresses VA tACC tCE CE# tCH OE# tOEH WE# tOH DQ6/DQ2 tBUSY RY/BY# Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle. High Z VA VA VA tOE tDF Valid Status (first read) Valid Status (second read) Valid Status (stops toggling) Valid Data Figure 20. Toggle Bit Timings (During Embedded Algorithms) 48 Am29LV160M 25974B5 January 31, 2007 Data Sheet AC Characteristics Enter Embedded Erasing WE# Erase Suspend Erase Enter Erase Suspend Program Erase Suspend Program Erase Resume Erase Suspend Read Erase Erase Complete Erase Suspend Read DQ6 DQ2 Note: The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an erase-suspended sector. Figure 21. DQ2 vs. DQ6 for Erase and Erase Suspend Operations Temporary Sector Unprotect Parameter JEDEC Std tVIDR tRSP Description VID Rise and Fall Time (See Note) RESET# Setup Time for Temporary Sector Unprotect Min Min All Speed Options 500 4 Unit ns µs Note: Not 100% tested. 12 V RESET# 0 or 3 V tVIDR Program or Erase Command Sequence CE# tVIDR WE# tRSP RY/BY# Figure 22. Temporary Sector Unprotect/Timing Diagram January 31, 2007 25974B5 Am29LV160M 49 Data Sheet AC Characteristics VID VIH RESET# SA, A6, A1, A0 Valid* Sector Protect/Unprotect Valid* Verify 40h Sector Protect: 150 µs Sector Unprotect: 15 ms Valid* Data 1 µs CE# 60h 60h Status WE# OE# Note: For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0. Figure 23. Sector Protect/Unprotect Timing Diagram 50 Am29LV160M 25974B5 January 31, 2007 Data Sheet AC Characteristics Alternate CE# Controlled Erase/Program Operations Parameter JEDEC tAVAV tAVEL tELAX tDVEH tEHDX Std tWC tAS tAH tDS tDH tOES tGHEL tWLEL tEHWH tELEH tEHEL tWHWH1 tWHWH2 tGHEL tWS tWH tCP tCPH tWHWH1 tWHWH2 Description Write Cycle Time (Note 1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recovery Time Before Write (OE# High to WE# Low) WE# Setup Time WE# Hold Time CE# Pulse Width CE# Pulse Width High Programming Operation (Note 2) Sector Erase Operation (Note 2) Byte Word Min Min Min Min Min Min Min Min Min Min Min Typ Typ Typ 35 35 30 12 12 0.7 45 35 45 45 0 0 0 0 0 35 50 70R 70 Speed Options 85 85 0 45 45 50 50 90 90 100 100 Unit ns ns ns ns ns ns ns ns ns ns ns µs sec Notes: 1. Not 100% tested. 2. See “Erase and Programming Performance” on page 59 for more information. January 31, 2007 25974B5 Am29LV160M 51 Data Sheet AC Characteristics 555 for program 2AA for erase PA for program SA for sector erase 555 for chip erase Data# Polling PA Addresses tWC tWH WE# tGHEL OE# tCP CE# tWS tCPH tDS tDH Data tRH A0 for program 55 for erase PD for program 30 for sector erase 10 for chip erase tAS tAH tPOLL tWHWH1 or 2 tBUSY DQ7#, DQ15 DOUT RESET# RY/BY# Notes: 1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, DOUT = data written to the device. 2. Figure indicates the last two bus cycles of the command sequence. 3. Word mode address used as an example. Figure 24. Alternate CE# Controlled Write Operation Timings 52 Am29LV160M 25974B5 January 31, 2007 Data Sheet Erase and Programming Performance Parameter Sector Erase Time Chip Erase Time Byte Programming Time Word Programming Time Chip Programming Time (Note 3) Byte Mode Word Mode Typ (Note 1) 0.7 32 18 18 36 19 300 300 100 66 Max (Note 2) 15 Unit sec Comments Excludes 00h programming prior to erasure (Note 4) µs Excludes system level overhead (Note 5) sec Notes: 1. Typical program and erase times assume the following conditions: 25°C, VCC = 3.0V, 100,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90°C, VCC = 2.7 V, 100,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 10, on page 31 and Table 11, on page 32 for further information on command definitions. 6. The device has a minimum erase and program cycle endurance of 100,000 cycles. Latchup Characteristics Description Input voltage with respect to VSS on all pins except I/O pins (including A9, OE#, and RESET#) Input voltage with respect to VSS on all I/O pins VCC Current Min –1.0 V –1.0 V –100 mA Max 12.5 V VCC + 1.0 V +100 mA Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time. TSOP Pin and BGA Package Capacitance Parameter Symbol CIN COUT CIN2 Parameter Description Input Capacitance VIN = 0 VOUT = 0 VIN = 0 Test Setup TSOP Fine-pitch BGA TSOP Fine-pitch BGA TSOP Fine-pitch BGA Typ 6 4.2 8.5 5.4 7.5 3.9 Max 7.5 5.0 12 6.5 9 4.7 Unit pF pF pF pF pF pF Output Capacitance Control Pin Capacitance Notes: 1. Sampled, not 100% tested. 2. Test conditions TA = 25°C, f = 1.0 MHz. Data Retention Parameter Minimum Pattern Data Retention Time Test Conditions 150°C 125°C Min 10 20 Unit Years Years January 31, 2007 25974B5 Am29LV160M 53 Data Sheet Physical Dimensions TS 048—48-Pin Standard TSOP Dwg rev AA; 10/99 Note: BSC is an ANSI standard for Basic Space Centering. 54 Am29LV160M 25974B5 January 31, 2007 Data Sheet Physical Dimensions TSR048—48-Pin Reverse TSOP Dwg rev AA; 10/99 Note: BSC is an ANSI standard for Basic Space Centering. January 31, 2007 25974B5 Am29LV160M 55 Data Sheet Physical Dimensions FBA048—48-Ball Fine-Pitch Ball Grid Array (BGA) 6 x 8 mm Package Dwg rev AF; 10/99 Note: BSC is an ANSI standard for Basic Space Centering. 56 Am29LV160M 25974B5 January 31, 2007 Data Sheet Physical Dimensions LAA064—64-Ball Fortified Ball Grid Array (BGA) 13 x 11 mm Package Note: BSC is an ANSI standard for Basic Space Centering. January 31, 2007 25974B5 Am29LV160M 57 Data Sheet Revision Summary Revision A (June 24, 2002) Initial release. Revision A+1 (July 3, 2002) Added LAA064 package. Corrected power consumption currents. Changed DC Characteristics Zero Power Flash tables to TBD. Corrected minimum erase and program cycle endurance. Revision A+2 (December 6, 2002) Global Removed 44-pin SO package. Deleted dashes from ordering part numbers. Distinctive Characteristics Added information for Secured Silicon sector, Program Suspend & Resume. Corrected erase endurance to 100K cycles. Changed section flow to match other MirrorBit data sheets. General Description Changed section flow to match other MirrorBit data sheets. Connection Diagrams Corrected Fortified BGA diagram: balls C5, D8, D4, and F1 are now NC. Ordering Information and Operating Ranges Removed Commercial and Extended temperature ranges. Corrected Fine-pitch BGA type to 6 x 8 mm package, FBA048. Added package markings for the LAA064. Secured Silicon Sector Flash Memory Region Added section. Program Suspend/Program Resume Command Sequence Added text and flowchart. Sector Protection/Unprotection Deleted reference to alternate, high-voltage method of sector protection. Command Definitions Modified introductory paragraph to indicate device behavior when presented with incorrect commands and data. Added mode restrictions to first paragraphs of program, sector erase and chip erase subsections. Command Definitions tables Replaced previous table with two tables. Byte mode and word mode are now shown separately. Added Secured Silicon Sector Factory Protect command sequence. Table 10. Write Operation Status Added Program Suspend Mode rows to table. BGA and TSOP Capacitance Added fine-pitch BGA capacitance to table. AC Characteristics tables Typical sector erase time is now 0.4 s in all tables. 58 Am29LV160M 25974B5 January 31, 2007 Data Sheet Physical Dimensions Corrected Fortified BGA drawing to FBA048. Revision A+3 (January 6, 2003) Global Deleted references to WP# and ACC. The Am29LV160M does not offer those features. Command Definitions table Deleted references to write buffers. This device does not offer that feature. AC Characteristics Erase and Program Operations table; Alternate CE# Controlled Erase/Operations table: Changed tWHWH1 to TBD. Revision A+4 (June 16, 2003) Global Changed status from Advance Information to Preliminary. Modified speed options available. Product Selector Guide Added Note #2. Ordering Information Corrected OPN tables and added Note. Secured Silicon Sector Flash Memory Region Replaced text in this section. Command Definitions Modified Legend. Erase/Program Operations and Alternate CE# Controlled Erase/ Program Operations Inserted values for all TBD. Erase and Programming Performance Inserted values for all TBD. Revision B (August 11, 2003) Global Modified speed options available. Converted document formatting to Spansion template. Changed data sheet status from Advance Information to Preliminary. Revision B+1 (February 27, 2004) Autoselect Mode, Table 4 Added Secured Silicon Sector Indicator Bit (DQ7). Secured Silicon Sector Flash Memory Region, Table 5 Corrected Secured Silicon Sector Address Ranges. Factory Locked: Secured Silicon Sector Programmed and Protected At the Factory: Corrected addresses associated with 16-byte random ESN. Command Definitions Tables Tables 10 and 11: Corrected Fourth Address of Secured Silicon Sector Factory Protect. January 31, 2007 25974B5 Am29LV160M 59 Data Sheet AC Characteristics Added tPOLL. Revision B+2 (September 24, 2004) Erase and Programming Performance Corrected chip erase, byte/word programming, and chip programming specifications. Command Definitions, Table 10 Corrected command definitions for Secured Silicon Sector Factory Protect and Program Command Definitions, Table 11 Corrected command definitions for Secured Silicon Sector Factory Protect. Cover sheet and Title page Added notation referencing superseding documentation. Revision B+3 (November 11, 2004) Global Added cross-reference links. Secured Silicon Sector Addressing Table Updated the x8 address ranges. Revision B+4 (January 10, 2006) This product has been retired and is not available for designs. For new and current designs, S29GL016A supersedes Am29LV160M and is the factoryrecommended migration path. Please refer to the S29GL016A datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only. Revision B5 (January 31, 2007) Global Changed SecSi to Secured Silicon. Erase and Program Operations table Changed tBUSY to a maximum specification. 60 Am29LV160M 25974B5 January 31, 2007 Data Sheet Colophon The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior authorization by the respective government entity will be required for export of those products Trademarks and Notice Copyright © 2006–2007 Spansion Inc. All rights reserved. Spansion, the Spansion logo, MirrorBit, ORNAND, HD-SIM, and combinations thereof, are trademarks of Spansion Inc. Other company and product names used in this publication are for identification purposes only and may be trademarks of their respective companies. Copyright © 2002–2005 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. January 31, 2007 25974B5 Am29LV160M 61