AM29SL800DT120WAC

Am29SL800D Data Sheet The following document contains information on Spansion memory products. Although the document is marked with the name of the company that originally developed the specification, Spansion will continue to offer these products to existing customers. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal data sheet improvement and are noted in the document revision summary, where supported. Future routine revisions will occur when appropriate, and changes will be noted in a revision summary. Continuity of Ordering Part Numbers Spansion continues to support existing part numbers beginning with “Am” and “MBM”. To order these products, please use only the Ordering Part Numbers listed in this document. For More Information Please contact your local sales office for additional information about Spansion memory solutions. Publication Number 27546 Revision A Amendment 6 Issue Date January 23, 2007 THIS PAGE LEFT INTENTIONALLY BLANK. DATA SHEET Am29SL800D 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS Single Power Supply Operation — 1.65 to 2.2 V for read, program, and erase operations — Ideal for battery-powered applications Manufactured on 0.23 µm Process Technology — Compatible with 0.32 µm Am29SL800C device High Performance — Access times as fast as 90 ns Ultra Low Power Consumption (Typical Values at 5 MHz) — 0.2 µA Automatic Sleep Mode current — 0.2 µA standby mode current — 5 mA read current — 15 mA program/erase current Flexible Sector Architecture — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen 64 Kbyte sectors (byte mode) — One 8 Kword, two 4 Kword, one 16 Kword, and fifteen 32 Kword sectors (word mode) — Supports full chip erase — Sector Protection Features: A hardware method of locking a sector to prevent any program or erase operations within that sector Sectors can be locked in-system or via programming equipment Temporary Sector Unprotect feature allows code changes in previously locked sectors Embedded Algorithms — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors — Embedded Program algorithm automatically writes and verifies data at specified addresses Minimum 1,000,000 Erase Cycle Guarantee Per Sector 20-Year Data Retention at 125°C Package Option — 48-pin TSOP — 48-ball FBGA Compatibility with JEDEC Standards — Pinout and software compatible with singlepower supply Flash — Superior inadvertent write protection Data# Polling and Toggle Bits — Provides a software method of detecting program or erase operation completion Ready/Busy# Pin (RY/BY#) — Provides a hardware method of detecting program or erase cycle completion Erase Suspend/Erase Resume — Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation Hardware Reset Pin (RESET#) — Hardware method to reset the device to reading array data Unlock Bypass Program Command — Reduces overall programming time when issuing multiple program command sequences Top or Bottom Boot Block Configurations Available This Data Sheet states AMD’s current specifications regarding the Products described herein. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Publication# 27546 Rev: A Amendment/6 Issue Date: January 23, 2007 DATA SHEET GENERAL DESCRIPTION The Am29SL800D is an 8 Mbit, 1.8 V volt-only Flashmemory organized as 1,048,576 bytes or 524,288 words. The device is offered in 48-pin TSOP and 48ball FBGA packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed and erased in-system with a single 1.8 volt VCC supply. No VPP is for write or erase operations. The device can also be programmed in standard EPROM programmers. The standard device offers access times of 90, 100, 120, and 150 ns, allowing high speed microprocessors to operate without wait states. To eliminate bus contention, the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. The device requires only a s ingle 1.8 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. Device programming occurs by executing the program command sequence. This initiates the E mbedded Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two write cycles to program data instead of four. Device erasure occurs by executing the erase command sequence. This initiates the E mbedded Erase algorithm—an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory. This can be achieved in-system or via programming equipment. The Erase Suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved. The hardware RESET# pin terminates any operation in progress and resets the internal state machine to reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the Flash memory. The device offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters the automatic sleep mode. The system can also place the device into the standby mode. Power consumption is greatly reduced in both these modes. AMD’s Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot electron injection. 2 Am29SL800D 27546A6 January 23, 2007 DATA SHEET TABLE OF CONTENTS Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 5 Special Handling Instructions for FBGA Packages .................. 5 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 7 Standard Products .................................................................... 7 Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 8 Table 1. Am29SL800D Device Bus Operations ................................8 Table 6. Write Operation Status ..................................................... 23 Absolute Maximum Ratings . . . . . . . . . . . . . . . . 24 Figure 7. Maximum Negative Overshoot Waveform ...................... 24 Figure 8. Maximum Positive Overshoot Waveform........................ 24 Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 24 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 25 Table 7. CMOS Compatible ........................................................... 25 Zero Power Flash ................................................................... 26 Figure 9. ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents) .............................................................................. 26 Figure 10. Typical ICC1 vs. Frequency ........................................... 26 Word/Byte Configuration .......................................................... 8 Requirements for Reading Array Data ..................................... 8 Writing Commands/Command Sequences .............................. 8 Program and Erase Operation Status ...................................... 9 Standby Mode .......................................................................... 9 Automatic Sleep Mode ............................................................. 9 RESET#: Hardware Reset Pin ................................................. 9 Output Disable Mode .............................................................. 10 Table 2. Am29SL800DT Top Boot Block Sector Address Table .....10 Table 3. Am29SL800DB Bottom Boot Block Sector Address Table 11 Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Figure 11. Test Setup..................................................................... 27 Table 8. Test Specifications ........................................................... 27 Table 9. Key to Switching Waveforms ........................................... 27 Figure 12. Input Waveforms and Measurement Levels ................. 27 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 28 Table 10. Read Operations ............................................................ 28 Figure 13. Read Operations Timings ............................................. 28 Table 11. Hardware Reset (RESET#) ............................................ 29 Figure 14. RESET# Timings .......................................................... 29 Table 12. Word/Byte Configuration (BYTE#) ................................. 30 Figure 15. BYTE# Timings for Read Operations............................ 30 Figure 16. BYTE# Timings for Write Operations............................ 30 Table 13. Erase/Program Operations ............................................ 31 Figure 17. Program Operation Timings.......................................... 32 Figure 18. Chip/Sector Erase Operation Timings .......................... 33 Figure 19. Data# Polling Timings (During Embedded Algorithms). 34 Figure 20. Toggle Bit Timings (During Embedded Algorithms)...... 34 Figure 21. DQ2 vs. DQ6................................................................. 35 Table 14. Temporary Sector Unprotect .......................................... 35 Figure 22. Temporary Sector Unprotect Timing Diagram .............. 35 Figure 23. Sector Protect/Unprotect Timing Diagram .................... 36 Table 15. Alternate CE# Controlled Erase/Program Operations .... 37 Figure 24. Alternate CE# Controlled Write Operation Timings ...... 38 Autoselect Mode ..................................................................... 12 Table 4. Am29SL800D Autoselect Code (High Voltage Method) ...12 Sector Protection/Unprotection ............................................... 12 Temporary Sector Unprotect .................................................. 12 Figure 1. In-System Sector Protect/Unprotect Algorithms .............. 13 Figure 2. Temporary Sector Unprotect Operation........................... 14 Hardware Data Protection ...................................................... 14 Command Definitions . . . . . . . . . . . . . . . . . . . . . 14 Reading Array Data ................................................................ 14 Reset Command ..................................................................... 14 Autoselect Command Sequence ............................................ 15 Word/Byte Program Command Sequence ............................. 15 Figure 3. Program Operation .......................................................... 16 Chip Erase Command Sequence ........................................... 16 Sector Erase Command Sequence ........................................ 16 Erase Suspend/Erase Resume Commands ........................... 17 Figure 4. Erase Operation............................................................... 18 Table 5. Am29SL800D Command Definitions ................................19 Erase and Programming Performance . . . . . . . 39 Table 16. Erase and Programming Performance ........................... 39 Table 17. Latchup Characteristics .................................................. 39 Table 18. TSOP Pin Capacitance .................................................. 39 Table 19. Data Retention ............................................................... 39 Write Operation Status . . . . . . . . . . . . . . . . . . . . . 20 DQ7: Data# Polling ................................................................. 20 Figure 5. Data# Polling Algorithm ................................................... 20 RY/BY#: Ready/Busy# ........................................................... 21 DQ6: Toggle Bit I .................................................................... 21 DQ2: Toggle Bit II ................................................................... 21 Reading Toggle Bits DQ6/DQ2 .............................................. 21 Figure 6. Toggle Bit Algorithm......................................................... 22 DQ5: Exceeded Timing Limits ................................................ 22 DQ3: Sector Erase Timer ....................................................... 22 Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 40 TS 048—48-Pin Standard TSOP ............................................ 40 FBA048—48-Ball Fine-Pitch Ball Grid Array (FBGA) 8.15 X 6.15 mm Package ....................................................... 41 FBC048—48-Ball Fine-Pitch Ball Grid Array (FBGA) 9 x 8 mm Package .................................................................. 42 VBK048—48 Ball Fine-Pitch Ball Grid Array (FBGA) ............. 43 8.15 x 6.15 mm ....................................................................... 43 Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 44 January 23, 2007 27546A6 Am29SL800D 3 DATA SHEET PRODUCT SELECTOR GUIDE Family Part Number Speed Options Max access time, ns (tACC) Max CE# access time, ns (tCE) Max OE# access time, ns (tOE) 90 (Note 2) 90 (Note 2) 90 (Note 2) 30 100 100 100 35 Am29SL800D 120 120 120 50 150 150 150 65 Notes: 1. See “AC Characteristics” for full specifications. 2. VCC min. = 1.7 V BLOCK DIAGRAM RY/BY# VCC VSS RESET# Erase Voltage Generator Input/Output Buffers Sector Switches DQ0–DQ15 (A-1) WE# BYTE# State Control Command Register PGM Voltage Generator Chip Enable Output Enable Logic STB Data Latch CE# OE# STB Address Latch Y-Decoder Y-Gating VCC Detector Timer X-Decoder Cell Matrix A0–A18 4 Am29SL800D 27546A6 January 23, 2007 DATA SHEET CONNECTION DIAGRAMS A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE# RESET# NC NC RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE# VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 Standard TSOP 48-Ball FBGA (Top View, Balls Facing Down) A6 A13 A5 A9 A4 WE# A3 RY/BY# A2 A7 A1 A3 B6 A12 B5 A8 B4 RESET# B3 NC B2 A17 B1 A4 C6 A14 C5 A10 C4 NC C3 A18 C2 A6 C1 A2 D6 A15 D5 A11 D4 NC D3 NC D2 A5 D1 A1 E6 A16 E5 DQ7 E4 DQ5 E3 DQ2 E2 DQ0 E1 A0 F6 G6 H6 VSS H5 DQ6 H4 DQ4 H3 DQ3 H2 DQ1 H1 VSS BYTE# DQ15/A-1 F5 DQ14 F4 DQ12 F3 DQ10 F2 DQ8 F1 CE# G5 DQ13 G4 VCC G3 DQ11 G2 DQ9 G1 OE# Special Handling Instructions for FBGA Packages Special handling is required for Flash Memory products in molded packages (TSOP and BGA). The package and/or data integrity may be compromised if the package body is exposed to temperatures about 150°C for prolonged periods of time. January 23, 2007 27546A6 Am29SL800D 5 DATA SHEET PIN CONFIGURATION A0–A18 = 19 addresses DQ0–DQ14 = 15 data inputs/outputs DQ15/A-1 BYTE# CE# OE# WE# RESET# RY/BY# VCC VSS NC = DQ15 (data input/output, word mode), A-1 (LSB address input, byte mode) = Selects 8-bit or 16-bit mode = Chip enable = Output enable = Write enable = Hardware reset pin, active low = Ready/Busy# output = 1.65–2.2 V single power supply = Device ground = Pin not connected internally LOGIC SYMBOL 19 A0–A18 DQ0–DQ15 (A-1) CE# OE# WE# RESET# BYTE# RY/BY# 16 or 8 6 Am29SL800D 27546A6 January 23, 2007 DATA SHEET ORDERING INFORMATION Standard Products AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the elements below. Am29SL800D T -100 E C TEMPERATURE RANGE C = Commercial (0°C to +70°C) D = Commercial (0°C to +70°C) with Pb-free package I = Industrial (–40°C to +85°C) F = Industrial (–40°C to +85°C) with Pb-free package PACKAGE TYPE E = 48-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 048) VU = 48-ball Fine-Pitch Ball Grid Array (FBGA) 0.80mm pitch, 8.15 x 6.15 mm package (VBK048) WA = 48-Ball Fine-Pitch Ball Grid Array (FBGA) 0.80 mm pitch, 8.15 x 6.15 mm package (FBA048) WC = 48-Ball Fine-Pitch Ball Grid Array (FBGA) 0.80 mm pitch, 9 x 8 mm package (FBC048) SPEED OPTION See Product Selector Guide and Valid Combinations BOOT CODE SECTOR ARCHITECTURE T = Top Sector B = Bottom Sector DEVICE NUMBER/DESCRIPTION Am29SL800D 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS Flash Memory 1.8 Volt-only Read, Program, and Erase Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations. Valid Combinations for FBGA Packages Order Number WAC, WAD WAI, WAF Package Marking A800DT90U, A800DB90U Valid Combinations for TSOP Packages AM29SL800DT90, AM29SL800DB90 AM29SL800DT100, AM29SL800DB100 EC, EI, ED, EF AM29SL800DT120, AM29SL800DB120 AM29SL800DT150, AM29SL800DB150 AM29SL800DT90, AM29SL800DB90 WCC, WCD, A800DT90P, WCI, WCF A800DB90P WAC, WAD WAI, WAF A800DT10U, A800DB10U AM29SL800DT100, AM29SL800DB100 WCC, WCD, A800DT10P, WCI, WCF A800DB10P WAC, WAD WAI, WAF A800DT12U, A800DB12U C, I, D, F AM29SL800DT120, AM29SL800DB120 WCC, WCD, A800DT12P, WCI, WCF A800DB12P WAC, WAD WAI, WAF A800DT15U, A800DB15U AM29SL800DT150, AM29SL800DB150 WCC, WCD, A800DT15P, WCI, WCF A800DB15P VUF A800DT12V A800DB12V Am29SL800DT120 January 23, 2007 27546A6 Am29SL800D 7 DATA SHEET tion needed to execute the command. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. Table 1 lists the device bus operations, the inputs and control levels they require, and the resulting output. The following subsections describe each of these operations in further detail. DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory location. The register is composed of latches that store the commands, along with the address and data informaTable 1. Am29SL800D Device Bus Operations DQ8–DQ15 Addresses (Note 1) AIN AIN X X X Sector Address, A6 = L, A1 = H, A0 = L Sector Address, A6 = H, A1 = H, A0 = L AIN DQ0– DQ7 DOUT DIN High-Z High-Z High-Z DIN BYTE# = VIH DOUT DIN High-Z High-Z High-Z X BYTE# = VIL DQ8–DQ14 = High-Z, DQ15 = A-1 High-Z High-Z High-Z X Operation Read Write Standby Output Disable Reset Sector Protect (Note) CE# L L VCC ± 0.2 V L X L OE# L H X H X H WE# H L X H X L RESET# H H VCC ± 0.2 V H L VID Sector Unprotect (Note) Temporary Sector Unprotect L X H X L X VID VID DIN DIN X DIN X High-Z Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 10 ± 1.0 V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out Notes: 1. Addresses are A18:A0 in word mode (BYTE# = VIH), A18:A-1 in byte mode (BYTE# = VIL). 2. The sector protect and sector unprotect functions may also be implemented via programming equipment. Word/Byte Configuration The BYTE# pin controls whether the device data I/O pins DQ15–DQ0 operate in the byte or word configuration. If the BYTE# pin is set at logic ‘1’, the device is in word configuration, DQ15–DQ0 are active and controlled by CE# and OE#. If the BYTE# pin is set at logic ‘0’, the device is in byte configuration, and only data I/O pins DQ0–DQ7 are active and controlled by CE# and OE#. The data I/O pins DQ8–DQ14 are tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function. ensures that no spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. The device remains enabled for read access until the command register contents are altered. See Reading Array Data‚ on page 14 for more information. Refer to the AC Read Operations table for timing specifications and to Figure 13, on page 28 for the timing diagram. ICC1 in the DC Characteristics table represents the active current specification for reading array data. Requirements for Reading Array Data To read array data from the outputs, the system must drive the CE# and OE# pins to VIL. CE# is the power control and selects the device. OE# is the output control and gates array data to the output pins. WE# should remain at V IH . The BYTE# pin determines whether the device outputs array data in words or bytes. The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This 8 Writing Commands/Command Sequences To write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH. For program operations, the BYTE# pin determines whether the device accepts program data in bytes or 27546A6 January 23, 2007 Am29SL800D DATA words. Refer to Word/Byte Configuration‚ on page 8 for more information. The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the Unlock Bypass mode, only two write cycles are required to program a word or byte, instead of four. The Word/Byte Program Command Sequence‚ on page 15 has details on programming data to the device using b o t h s t a n d a r d a n d U n l o ck B y p a s s c o m m a n d sequences. An erase operation can erase one sector, multiple sectors, or the entire device. Tables 2 and 3 indicate the address space that each sector occupies. A “sector address” consists of the address bits required to uniquely select a sector. The Command Definitions‚ on page 14 has details on erasing a sector or the entire chip, or suspending/resuming the erase operation. After the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on DQ7–DQ0. Standard read cycle timings apply in this mode. Refer to the Autoselect Mode‚ on page 12 and Autoselect Command Sequence‚ on page 15 sections for more information. ICC2 in the DC Characteristics table represents the active current specification for the write mode. AC Characteristics‚ on page 28 contains timing specification tables and timing diagrams for write operations. SHEET The device also enters the standby mode when the RESET# pin is driven low. Refer to the next section, RESET#: Hardware Reset Pin. If the device is deselected during erasure or programming, the device draws active current until the operation is completed. ICC3 in Table 7 on page 25 represents the standby current specification. Automatic Sleep Mode The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain stable for tACC + 50 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. ICC4 in Table 7 on page 25 represents the automatic sleep mode current specification. RESET#: Hardware Reset Pin The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for at least a period of tRP, the device i mmediately terminates a ny operation in progress, tristates all output pins, and ignores all read/write commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity. Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS±0.2 V, the device draws CMOS standby current (ICC4). If RESET# is held at VIL but not within VSS±0.2 V, the standby current is greater. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash memory, enabling the system to read the boot-up firmware from the Flash memory. If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY# to determine whether the reset operation is complete. If RESET# is asserted when a program or erase operation is not executing (RY/BY# pin is “1”), the reset operation is completed within a time of tREADY (not during Embedded Algorithms). The system can read data t RH a fter the RESET# pin returns to VIH. Program and Erase Operation Status During an erase or program operation, the system may check the status of the operation by reading the status bits on DQ7–DQ0. Standard read cycle timings and ICC read specifications apply. Refer to Write Operation Status‚ on page 20 for more information, and to “AC Characteristics” for timing diagrams. Standby Mode When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. The device enters the CMOS standby mode when the CE# and RESET# pins are both held at VCC ± 0.2 V. (Note that this is a more restricted voltage range than VIH.) If CE# and RESET# are held at VIH, but not within VCC ± 0.2 V, the device will be in the standby mode, but the standby current will be greater. The device requires standard access time (tCE) for read access when the device is in either of these standby modes, before it is ready to read data. January 23, 2007 27546A6 Am29SL800D 9 DATA Refer to the Table 10 on page 28 for RESET# parameters and to Figure 14, on page 29 for the timing diagram. SHEET Output Disable Mode When the OE# input is at VIH, output from the device is disabled. The output pins are placed in the high impedance state. Table 2. Am29SL800DT Top Boot Block Sector Address Table Sector Size (Kbytes/ Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 32/16 8/4 8/4 16/8 Address Range (in hexadecimal) (x8) Address Range 00000h–0FFFFh 10000h–1FFFFh 20000h–2FFFFh 30000h–3FFFFh 40000h–4FFFFh 50000h–5FFFFh 60000h–6FFFFh 70000h–7FFFFh 80000h–8FFFFh 90000h–9FFFFh A0000h–AFFFFh B0000h–BFFFFh C0000h–CFFFFh D0000h–DFFFFh E0000h–EFFFFh F0000h–F7FFFh F8000h–F9FFFh FA000h–FBFFFh FC000h–FFFFFh (x16) Address Range 00000h–07FFFh 08000h–0FFFFh 10000h–17FFFh 18000h–1FFFFh 20000h–27FFFh 28000h–2FFFFh 30000h–37FFFh 38000h–3FFFFh 40000h–47FFFh 48000h–4FFFFh 50000h–57FFFh 58000h–5FFFFh 60000h–67FFFh 68000h–6FFFFh 70000h–77FFFh 78000h–7BFFFh 7C000h–7CFFFh 7D000h–7DFFFh 7E000h–7FFFFh Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 A18 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 A17 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 1 1 1 A16 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 1 1 1 A15 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 1 1 1 A14 X X X X X X X X X X X X X X X 0 1 1 1 A13 X X X X X X X X X X X X X X X X 0 0 1 A12 X X X X X X X X X X X X X X X X 0 1 X 10 Am29SL800D 27546A6 January 23, 2007 DATA SHEET Table 3. Am29SL800DB Bottom Boot Block Sector Address Table Sector Size (Kbytes/ Kwords) 16/8 8/4 8/4 32/16 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 Address Range (in hexadecimal) (x8) Address Range 00000h–03FFFh 04000h–05FFFh 06000h–07FFFh 08000h–0FFFFh 10000h–1FFFFh 20000h–2FFFFh 30000h–3FFFFh 40000h–4FFFFh 50000h–5FFFFh 60000h–6FFFFh 70000h–7FFFFh 80000h–8FFFFh 90000h–9FFFFh A0000h–AFFFFh B0000h–BFFFFh C0000h–CFFFFh D0000h–DFFFFh E0000h–EFFFFh F0000h–FFFFFh (x16) Address Range 00000h–01FFFh 02000h–02FFFh 03000h–03FFFh 04000h–07FFFh 08000h–0FFFFh 10000h–17FFFh 18000h–1FFFFh 20000h–27FFFh 28000h–2FFFFh 30000h–37FFFh 38000h–3FFFFh 40000h–47FFFh 48000h–4FFFFh 50000h–57FFFh 58000h–5FFFFh 60000h–67FFFh 68000h–6FFFFh 70000h–77FFFh 78000h–7FFFFh Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 A18 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 A17 0 0 0 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 A16 0 0 0 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 A15 0 0 0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 A14 0 0 0 1 X X X X X X X X X X X X X X X A13 0 1 1 X X X X X X X X X X X X X X X X A12 X 0 1 X X X X X X X X X X X X X X X X Note for Tables 2 and 3: Address range is A18:A-1 in byte mode and A18:A0 in word mode. See “Word/Byte Configuration” section for more information. January 23, 2007 27546A6 Am29SL800D 11 DATA SHEET address must appear on the appropriate highest order address bits (see Table 2 on page 10 and Table 3 on page 11). Table 4 shows the remaining address bits that are don’t care. When all necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on DQ7–DQ0. To access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in Table 5 on page 19. This method does not require VID. See Command Definitions‚ on page 14 for details on using the autoselect mode. Autoselect Mode The autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on DQ7–DQ0. This mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. However, the autoselect codes can also be accessed in-system through the command register. When using programming equipment, the autoselect mode requires VID on address pin A9. Address pins A6, A1, and A0 must be as shown in Table 4. In addition, when verifying sector protection, the sector Table 4. Am29SL800D Autoselect Code (High Voltage Method) A18 to A12 X X A11 to A10 X X A8 to A7 X X A5 to A2 X X DQ8 to DQ15 X 22h VID L L H X 22h X X VID X L X L H X X 6Bh 01h (protected) 00h (unprotected) EAh 6Bh DQ7 to DQ0 01h EAh Description Mode CE# L L L L L OE# L L L L L WE# H H H H H A9 VID A6 L A1 L A0 L Manufacturer ID: AMD Device ID: Am29SL800D (Top Boot Block) Device ID: Am29SL800D (Bottom Boot Block) Word Byte Word Byte Sector Protection Verification L L H SA X VID X L X H L X L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care. Sector Protection/Unprotection The hardware sector protection feature disables both program and erase operations in any sector. The hardware sector unprotection feature re-enables both program and erase operations in previously protected sectors. Sector protection/unprotection can be implemented via two methods. Sector Protection/ Unprotection requires VID on the RESET# pin only, and can be implemented either insystem or via programming equipment. Figure 1, on page 13 shows the algorithms and Figure 23, on page 36 shows the timing diagram. For sector unprotect, all unprotected sectors must first be protected prior to the first sector unprotect write cycle. The device is shipped with all sectors unprotected. AMD offers the option of programming and protecting sectors at its factory prior to shipping the device through AMD’s ExpressFlash™ Service. Contact an AMD representative for details. It is possible to determine whether a sector is protected or unprotected. See Autoselect Mode‚ on page 12 for details. Temporary Sector Unprotect This feature allows temporary unprotection of previously protected sectors to change data in-system. The Sector Unprotect mode is activated by setting the RESET# pin to VID. During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. Once VID is removed from the RESET# pin, all the previously protected sectors are protected again. Figure 2, on page 14 shows the algorithm, and Figure 22, on page 35 shows the timing diagrams, for this feature. 12 Am29SL800D 27546A6 January 23, 2007 DATA SHEET START PLSCNT = 1 RESET# = VID Wait 1 ms Protect all sectors: The indicated portion of the sector protect algorithm must be performed for all unprotected sectors prior to issuing the first sector unprotect address START PLSCNT = 1 RESET# = VID Wait 1 ms Temporary Sector Unprotect Mode No First Write Cycle = 60h? First Write Cycle = 60h? No Temporary Sector Unprotect Mode Yes Set up sector address No Yes All sectors protected? Sector Protect: Write 60h to sector address with A6 = 0, A1 = 1, A0 = 0 Yes Set up first sector address Wait 150 µs Increment PLSCNT Verify Sector Protect: Write 40h to sector address with A6 = 0, A1 = 1, A0 = 0 Sector Unprotect: Write 60h to sector address with A6 = 1, A1 = 1, A0 = 0 Reset PLSCNT = 1 Wait 15 ms Read from sector address with A6 = 0, A1 = 1, A0 = 0 No No PLSCNT = 25? Data = 01h? Increment PLSCNT Verify Sector Unprotect: Write 40h to sector address with A6 = 1, A1 = 1, A0 = 0 Yes Yes Yes Device failed Protect another sector? No Remove VID from RESET# Read from sector address with A6 = 1, A1 = 1, A0 = 0 No Set up next sector address Data = 00h? No PLSCNT = 1000? Yes Yes Device failed Write reset command Last sector verified? Yes Remove VID from RESET# No Sector Protect Algorithm Sector Protect complete Sector Unprotect Algorithm Write reset command Sector Unprotect complete Figure 1. In-System Sector Protect/Unprotect Algorithms January 23, 2007 27546A6 Am29SL800D 13 DATA SHEET for command definitions). In addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during VCC power-up and power-down transitions, or from system noise. Low VCC Write Inhibit When V CC i s less than V LKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets. Subsequent writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control pins to prevent unintentional writes when VCC is greater than VLKO. Write Pulse “Glitch” Protection Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle. Logical Inhibit START RESET# = VID (Note 1) Perform Erase or Program Operations RESET# = VIH Temporary Sector Unprotect Completed (Note 2) Notes: 1. All protected sectors unprotected. 2. All previously protected sectors are protected once again. Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a logical one. Power-Up Write Inhibit If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to reading array data on power-up. Figure 2. Temporary Sector Unprotect Operation Hardware Data Protection The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to Table 5 on page 19 COMMAND DEFINITIONS Writing specific address and data commands or sequences into the command register initiates device operations. Table 5 on page 19 defines the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. A reset command is then required to return the device to reading array data. All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on the rising edge of WE# or CE#, whichever happens first. Refer to the appropriate timing diagrams in the AC Characteristics‚ on page 28 section. After the device accepts an Erase Suspend command, the device enters the Erase Suspend mode. The system can read array data using the standard read timings, except that if it reads at an address within erase-suspended sectors, the device outputs status data. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See Erase Suspend/Erase Resume Commands‚ on page 17 for more information on this mode. The system m ust i ssue the reset command to reenable the device for reading array data if DQ5 goes high, or while in the autoselect mode. See Reset Command‚ on page 14. See also Requirements for Reading Array Data‚ on page 8 for more information. Table 10 on page 28 provides the read parameters, and Figure 12, on page 27 shows the timing diagram. Reading Array Data The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. The device is also ready to read array data after completing an Embedded Program or Embedded Erase algorithm. Reset Command Writing the reset command to the device resets the device to reading array data. Address bits are don’t care for this command. 27546A6 January 23, 2007 14 Am29SL800D DATA The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the device to reading array data. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the device to reading array data (also applies to programming in Erase Suspend mode). Once programming begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to reading array data (also applies to autoselect during Erase Suspend). If DQ5 goes high during a program or erase operation, writing the reset command returns the device to reading array data (also applies dur ing Erase Suspend). SHEET The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically generates the program pulses and verifies the programmed cell margin. Table 5 on page 19 shows the address and data r e q u i r e m e n t s fo r t h e byt e p r o gra m c o m m a n d sequence. When the Embedded Program algorithm is complete, the device then returns to reading array data and addresses are no longer latched. The system can determine the status of the program operation by using DQ7, DQ6, or RY/BY#. See Table on page 20 for information on these status bits. Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the programming operation. The Byte Program command sequence should be reinitiated once the device has reset to reading array data, to ensure data integrity. Programming is allowed in any sequence and across sector boundaries. A b it cannot be programmed from a “0” back to a “1”. Attempting to do so may halt the operation and set DQ5 to “1”, or cause the Data# Polling algorithm to indicate the operation was successful. However, a succeeding read will show that the data is still “0”. Only erase operations can convert a “0” to a “1”. Unlock Bypass Command Sequence The unlock bypass feature allows the system to program bytes or words to the device faster than using the standard program command sequence. The unlock bypass command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. The device then enters the unlock bypass mode. A twocycle unlock bypass program command sequence is all that is required to program in this mode. The first cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the program address and data. Additional data is programmed in the same manner. This mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total programming time. Table 5 on page 19 shows the requirements for the command sequence. During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the data 90h; the second cycle the data 00h. Addresses are don’t cares. The device then returns to reading array data. Autoselect Command Sequence The autoselect command sequence allows the host system to access the manufacturer and devices codes, and determine whether or not a sector is protected. Table 5 on page 19 shows the address and data requirements. This method is an alternative to that shown in Table 4 on page 12, which is intended for PROM programmers and requires VID on address bit A9. The autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect command. The device then enters the autoselect mode, and the system may read at any address any number of times, without initiating another command sequence. A read cycle at address XX00h retrieves the manufacturer code. A read cycle at address 01h in word mode (or 02h in byte mode) returns the device code. A read cycle containing a sector address (SA) and the address 02h in word mode (or 04h in byte mode) returns 01h if that sector is protected, or 00h if it is unprotected. Refer to Table 2 on page 10 and Table 3 on page 11 for valid sector addresses. The system must write the reset command to exit the autoselect mode and return to reading array data. Word/Byte Program Command Sequence The system may program the device by word or byte, depending on the state of the BYTE# pin. Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. January 23, 2007 27546A6 Am29SL800D 15 DATA Figure 3 illustrates the algorithm for the program operation. See Table 13 on page 31 for parameters, and to Figure 17, on page 32 for timing diagrams. START SHEET Chip Erase Command Sequence Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. Table 5 on page 19 shows the address and data requirements for the chip erase command sequence. Any commands wr itten to the chip dur ing the Embedded Erase algorithm are ignored. Note that a hardware reset during the chip erase operation immediately terminates the operation. The Chip Erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. See “Write Operation Status” for information on these status bits. When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. Figure 4, on page 18 illustrates the algorithm for the erase operation. See Table 13 on page 28 for parameters, and to Figure 10, on page 26 for timing diagrams. Write Program Command Sequence Data Poll from System Embedded Program algorithm in progress Verify Data? No Yes Increment Address No Last Address? Yes Programming Completed 1. See Table 5 for program command sequence. Figure 3. Program Operation Sector Erase Command Sequence Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the address of the sector to be erased, and the sector erase command. Table 5 shows the address and data requirements for the sector erase command sequence. The device does not require the system to preprogram the memory prior to erase. The Embedded Erase algorithm automatically programs and verifies the sector for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. After the command sequence is written, a sector erase time-out of 50 µs begins. During the time-out period, additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles must be less than 50 µs, otherwise the last address and command might not be accepted, and erasure may begin. It is recommended that processor interrupts be disabled during 16 Am29SL800D 27546A6 January 23, 2007 DATA this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is written. If the time between additional sector erase commands can be assumed to be less than 50 µs, the system need not monitor DQ3. Any command other than Sector Erase or Erase Suspend during the time-out period resets the device to reading array data. T he system must rewrite the command sequence and any additional sector addresses and commands. The system can monitor DQ3 to determine if the sector erase timer has timed out. (See DQ3: Sector Erase Timer‚ on page 22.) The time-out begins from the rising edge of the final WE# pulse in the command sequence. Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. Note that a hardware reset during the sector erase operation immediately terminates the operation. The Sector Erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. (Refer to W rite Operation Status‚ on page 20 for information on these status bits.) Figure 4, on page 18 illustrates the algorithm for the erase operation. Refer to the Table 16 on page 39for parameters, and to Figure 18, on page 33 for timing diagrams. SHEET time-out period and suspends the erase operation. Addresses are “don’t-cares” when writing the Erase Suspend command. When the Erase Suspend command is written during a sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. After the erase operation has been suspended, the system can read array data from or program data to any sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Normal read and write timings and command definitions apply. Reading at any address within erase-suspended sectors produces status data on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. See Write Operation Status‚ on page 20 for information on these status bits. After an erase-suspended program operation is complete, the system can once again read array data within non-suspended sectors. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard program operation. See Write Operation Status‚ on page 20 for more information. The system may also write the autoselect command sequence when the device is in the Erase Suspend mode. The device allows reading autoselect codes even at addresses within erasing sectors, since the codes are not stored in the memory array. When the device exits the autoselect mode, the device reverts to the Erase Suspend mode, and is ready for another valid operation. See Autoselect Command Sequence‚ on page 15 for more information. The system must write the Erase Resume command (address bits are don’t care) to exit the erase suspend mode and continue the sector erase operation. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the device has resumed erasing. Erase Suspend/Erase Resume Commands The Erase Suspend command allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. This command is valid only during the sector erase operation, including the 50 µs time-out period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. Writing the Erase Suspend command during the Sector Erase time-out immediately terminates the January 23, 2007 27546A6 Am29SL800D 17 DATA SHEET START Write Erase Command Sequence Data Poll from System Embedded Erase algorithm in progress No Data = FFh? Yes Erasure Completed Notes: 1. See Table 5 for erase command sequence. 2. See “DQ3: Sector Erase Timer” for more information. Figure 4. Erase Operation 18 Am29SL800D 27546A6 January 23, 2007 DATA Table 5. Command Sequence (Note 1) Read (Note 6) Reset (Note 7) Manufacturer ID Device ID, Top Boot Block Autoselect (Note 8) Device ID, Bottom Boot Block Word Byte Word Byte Word Byte Word Sector Protect Verify (Note 9) Byte Word Extension Byte Program Unlock Bypass Word Byte Word Byte 4 3 2 2 Word Byte Word Byte 6 6 1 1 4 AAA 555 AAA 555 AAA XXX XXX 555 AAA 555 AAA XXX XXX AA AA A0 90 AA AA B0 30 4 AAA 555 AA 555 2AA 555 2AA 555 PA XXX 2AA 555 2AA 555 Cycles SHEET Am29SL800D Command Definitions Bus Cycles (Notes 2-5) Second Addr Data RD F0 AA AA AA 2AA 555 2AA 555 2AA 555 2AA AA 555 2AA 55 AAA 55 55 PD 00 55 55 555 AAA 555 AAA 80 80 555 AAA 555 AAA AA AA 2AA 555 2AA 555 55 55 555 AAA SA 10 30 555 AAA 555 AAA A0 20 55 AAA 555 90 X04 PA 55 55 55 555 AAA 555 AAA 555 AAA 555 90 (SA) X04 X03 90 90 90 X00 X01 X02 X01 X02 (SA) X02 01 22EA EA 226B 6B XX00 XX01 00 01 TBD TBD TBD TBD PD Third Addr Data Fourth Addr Data Fifth Addr Data Sixth Addr Data First Addr RA XXX 555 AAA 555 AAA 555 AAA 555 Data 1 1 4 4 4 Unlock Bypass Program (Note 10) Unlock Bypass Reset (Note 11) Chip Erase Sector Erase Erase Suspend (Note 12) Erase Resume (Note 13) Legend: X = Don’t care RA = Address of the memory location to be read. RD = Data read from location RA during read operation. PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later. Notes: 1. See Table 1 for description of bus operations. 2. All values are in hexadecimal. 3. Except when reading array or autoselect data, all bus cycles are write operations. 4. Data bits DQ15–DQ8 are don’t cares for unlock and command cycles. 5. Address bits A18–A11 are don’t cares for unlock and command cycles, unless SA or PA required. 6. No unlock or command cycles required when reading array data, unless SA or PA required. 7. The Reset command is required to return to reading array data when device is in the autoselect mode, or if DQ5 goes high (while the device is providing status data). 8. The fourth cycle of the autoselect command sequence is a read cycle. PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first. SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A18–A12 uniquely select any sector. 9. The data is 00h for an unprotected sector and 01h for a protected sector. See “Autoselect Command Sequence” for more information. 10. The Unlock Bypass command is required prior to the Unlock Bypass Program command. 11. The Unlock Bypass Reset command is required to return to reading array data when the device is in the unlock bypass mode. 12. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is valid only during a sector erase operation. 13. The Erase Resume command is valid only during the Erase Suspend mode. January 23, 2007 27546A6 Am29SL800D 19 DATA SHEET WRITE OPERATION STATUS The device provides several bits to determine the status of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7, and RY/BY#. Table 6 and the following subsections describe the functions of these bits. DQ7, RY/BY#, and DQ6 each offer a method for determining whether a program or erase operation is complete or in progress. These three bits are discussed first. page 34, Data# Polling Timings (During Embedded Algorithms), illustrates this. Table 6 on page 23 shows the outputs for Data# Polling on DQ7. Figure 5 shows the Data# Polling algorithm. DQ7: Data# Polling The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Algorithm is in progress or completed, or whether the device is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the program or erase command sequence. During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then the device returns to reading array data. During the Embedded Erase algorithm, Data# Polling produces a 0 on DQ7. When the Embedded Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data# Polling produces a 1 on DQ7. This is analogous to the complement/true datum output described for the Embedded Program algorithm: the erase function changes all the bits in a sector to 1; prior to this, the device outputs the complement, or 0. The system must provide an address within any of the sectors selected for erasure to read valid status information on DQ7. After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 µs, then the device returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. When the system detects DQ7 has changed from the complement to true data, it can read valid data at DQ7– DQ0 on the following read cycles. This is because DQ7 may change asynchronously with DQ0–DQ6 while Output Enable (OE#) is asserted low. Figure 19, on START Read DQ7–DQ0 Addr = VA DQ7 = Data? Yes No No DQ5 = 1? Yes Read DQ7–DQ0 Addr = VA DQ7 = Data? Yes No PASS FAIL Notes: 1. VA = Valid address for programming. During a sector erase operation, a valid address is an address within any sector selected for erasure. During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Figure 5. Data# Polling Algorithm 20 Am29SL800D 27546A6 January 23, 2007 DATA SHEET Table 6 on page 23 shows the outputs for Toggle Bit I on DQ6. Figure 6, on page 22 shows the toggle bit algorithm. Figure 20, on page 34 shows the toggle bit timing diagrams. Figure 21, on page 35 shows the differences between DQ2 and DQ6 in graphical form. See also the subsection on DQ2: Toggle Bit II. RY/BY#: Ready/Busy# The RY/BY# is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a pull-up resistor to VCC. If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is high (Ready), the device is ready to read array data (including during the Erase Suspend mode), or is in the standby mode. Table 6 on page 23 shows the outputs for RY/BY#. Figure 14, on page 29, Figure 17, on page 32, and Figure 18, on page 33 shows RY/BY# for reset, program, and erase operations, respectively. DQ2: Toggle Bit II The Toggle Bit II on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. The device toggles DQ2 with each OE# or CE# read cycle. DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. But DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 6 on page 23 to compare outputs for DQ2 and DQ6. Figure 6, on page 22 shows the toggle bit algorithm in flowchart form, and the section D Q2: Toggle Bit II explains the algorithm. See also the DQ6: Toggle Bit I subsection. Figure 20, on page 34 shows the toggle bit timing diagram. Figure 21, on page 35 shows the differences between DQ2 and DQ6 in graphical form. DQ6: Toggle Bit I Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause DQ6 to toggle (The system may use either OE# or CE# to control the read cycles). When the operation is complete, DQ6 stops toggling. After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 100 µs, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erasesuspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 (see the subsection on DQ7: Data# Polling). If a program address falls within a protected sector, DQ6 toggles for approximately 1 µs after the program command sequence is written, then returns to reading array data. DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete. January 23, 2007 27546A6 Reading Toggle Bits DQ6/DQ2 Refer to Figure 6, on page 22 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on DQ7–DQ0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not completed the operation successfully, and the system must write the reset command to return to reading array data. 21 Am29SL800D DATA The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 6). SHEET DQ5: Exceeded Timing Limits DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a 1. This is a failure condition that indicates the program or erase cycle was not successfully completed. The DQ5 failure condition may appear if the system tries to program a 1 to a location that is previously programmed to 0. Only an erase operation can change a 0 back to a 1. Under this condition, the device halts the operation, and when the operation has exceeded the timing limits, DQ5 produces a 1. Under both these conditions, the system must issue the reset command to return the device to reading array data. START Read DQ7–DQ0 Read DQ7–DQ0 DQ3: Sector Erase Timer Toggle Bit = Toggle? Yes No No DQ5 = 1? Yes Read DQ7–DQ0 Twice After writing a sector erase command sequence, the system may read DQ3 to determine whether or not an erase operation has begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire timeout also applies after each additional sector erase command. When the time-out is complete, DQ3 switches from 0 to 1. If the time between additional sector erase commands from the system can be assumed to be less than 50 µs, the system need not monitor DQ3. See also Sector Erase Command Sequence‚ on page 16. After the sector erase command sequence is written, the system should read the status on DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure the device has accepted the command sequence, and then read DQ3. If DQ3 is 1, the internally controlled erase cycle has begun; all further commands (other than Erase Suspend) are ignored until the erase operation is complete. If DQ3 is 0, the device will accept additional sector erase commands. To ensure the command has been accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last command might not have been accepted. Figure 6 shows the outputs for DQ3. Toggle Bit = Toggle? No Yes Program/Erase Operation Not Complete, Write Reset Command Program/Erase Operation Complete Notes: 1. Read toggle bit twice to determine whether or not it is toggling. See text. 2. Recheck toggle bit because it may stop toggling as DQ5 changes to “1”. See text Figure 6. Toggle Bit Algorithm 22 Am29SL800D 27546A6 January 23, 2007 DATA SHEET Table 6. Write Operation Status Operation Standard Mode Embedded Program Algorithm Embedded Erase Algorithm Reading within Erase Suspended Sector Reading within Non-Erase Suspended Sector Erase-Suspend-Program DQ7 (Note 2) DQ7# 0 1 Data DQ7# DQ6 Toggle Toggle No toggle Data Toggle DQ5 (Note 1) 0 0 0 Data 0 DQ3 N/A 1 N/A Data N/A DQ2 (Note 2) No toggle Toggle Toggle Data N/A RY/BY# 0 0 1 1 0 Erase Suspend Mode Notes: 1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. See “DQ5: Exceeded Timing Limits for more information. 2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details. January 23, 2007 27546A6 Am29SL800D 23 DATA SHEET ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages ...............................–65°C to +150°C Ambient Temperature with Power Applied............................–65°C to +125°C Voltage with Respect to Ground VCC (Note 1) ................................ –0.5 V to +2.5 V A9, OE#, and RESET# (Note 2)................ –0.5 V to +11.0 V All other pins (Note 1)........... –0.5 V to VCC+0.5 V Output Short Circuit Current (Note 3) ............. 100 mA Notes: 1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, input or I/O pins may overshoot VSS to –2.0 V for periods of up to 20 ns. See Figure 7. Maximum DC voltage on input or I/O pins is VCC +0.5 V. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 8. 2. Minimum DC input voltage on pins A9, OE#, and RESET# is –0.5 V. During voltage transitions, A9, OE#, and RESET# may overshoot VSS to –2.0 V for periods of up to 20 ns. See Maximum DC input voltage on pin A9 is +11.0 V which may overshoot to 12.5 V for periods up to 20 ns. 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. 20 ns 0.0 V –0.5 V –2.0 V 20 ns 20 ns Figure 7. Maximum Negative Overshoot Waveform 20 ns VCC +2.0 V VCC +0.5 V 2.0 V 20 ns 20 ns Figure 8. Maximum Positive Overshoot Waveform OPERATING RANGES Commercial (C) Devices Ambient Temperature (TA).......................0°C to +70°C Industrial (I) Devices Ambient Temperature (TA)...................–40°C to +85°C VCC Supply Voltages VCC, 90ns speed option ...................+1.70 V to +2.2 V VCC, All other speed options ............+1.65 V to +2.2 V Operating ranges define those limits between which the functionality of the device is guaranteed. 24 Am29SL800D 27546A6 January 23, 2007 DATA SHEET DC CHARACTERISTICS Table 7. Parameter ILI ILIT ILO Description Input Load Current A9 Input Load Current Output Leakage Current CMOS Compatible Test Conditions Min Typ Max ±1.0 35 ±1.0 5 MHz 1 MHz 5 MHz 1 MHz 5 1 5 1 15 0.2 0.2 0.2 –0.5 0.7 x VCC 10 3 mA 10 3 30 5 5 5 0.3 x VCC VCC + 0.3 11.0 0.25 0.1 0.85 x VCC VCC–0.1 1.2 1.5 mA µA µA µA V V V V V V V V Unit µA µA µA VIN = VSS to VCC, VCC = VCC max VCC = VCC max; A9 = 11.0 V VOUT = VSS to VCC, VCC = VCC max CE# = VIL, OE# = VIH, Byte Mode CE# = VIL, OE# = VIH, Word Mode CE# = VIL, OE# = VIH CE#, RESET# = VCC ± 0.2 V RESET# = VSS ± 0.2 V VIH = VCC ± 0.2 V; VIL = VSS ± 0.2 V ICC1 VCC Active Read Current (Notes 1, 2) ICC2 ICC3 ICC4 ICC5 VIL VIH VID VOL1 VOL2 VOH1 VOH2 VLKO VCC Active Write Current (Notes 2, 3, 5) VCC Standby Current (Note 2) VCC Reset Current (Note 2) Automatic Sleep Mode (Notes 2, 3) Input Low Voltage Input High Voltage Voltage for Autoselect and Temporary Sector Unprotect Output Low Voltage VCC = 2.0 V IOL = 2.0 mA, VCC = VCC min IOL = 100 μA, VCC = VCC min IOH = –2.0 mA, VCC = VCC min IOH = –100 μA, VCC = VCC min 9.0 Output High Voltage Low VCC Lock-Out Voltage (Note 4) Notes: 1. The ICC current listed is typically less than 1 mA/MHz, with OE# at VIH. Typical VCC is 2.0 V. 2. The maximum ICC specifications are tested with VCC = VCCmax. 3. ICC active while Embedded Erase or Embedded Program is in progress. 4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 50 ns. 5. Not 100% tested. January 23, 2007 27546A6 Am29SL800D 25 DATA SHEET DC CHARACTERISTICS (Continued) Zero Power Flash 20 Supply Current in mA 15 10 5 0 0 500 1000 1500 2000 Time in ns Note: Addresses are switching at 1 MHz Figure 9. ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents) 2500 3000 3500 4000 10 8 Supply Current in mA 6 2.2 V 4 1.8 V 2 0 1 2 3 Frequency in MHz Note: T = 25 °C Figure 10. Typical ICC1 vs. Frequency 4 5 26 Am29SL800D 27546A6 January 23, 2007 DATA SHEET TEST CONDITIONS Table 8. Test Condition Output Load Test Specifications -90, -100 -120, -150 1 TTL gate 30 5 0.0–2.0 1.0 1.0 100 pF ns V V V Unit Device Under Test CL Output Load Capacitance, CL (including jig capacitance) Input Rise and Fall Times Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels Figure 11. Test Setup Table 9. WAVEFORM Key to Switching Waveforms OUTPUTS Steady INPUTS Changing from H to L Changing from L to H Don’t Care, Any Change Permitted Changing, State Unknown Does Not Apply Center Line is High Impedance State (High Z) 2.0 V Input 0.0 V 1.0 V Measurement Level 1.0 V Output Figure 12. Input Waveforms and Measurement Levels January 23, 2007 27546A6 Am29SL800D 27 DATA SHEET AC CHARACTERISTICS Table 10. Parameter JEDEC tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ Std tRC tACC tCE tOE tDF tDF Description Read Cycle Time (Note 1) Address to Output Delay Chip Enable to Output Delay Output Enable to Output Delay Chip Enable to Output High Z (Note 1) Output Enable to Output High Z (Note 1) Read tOEH Output Enable Hold Time (Note 1) Toggle and Data# Polling CE# = VIL OE# = VIL OE# = VIL Test Setup Min Max Max Max Max Max Min Min Min -90 90 (Note 3) 90 (Note 3) 90 (Note 3) 30 Read Operations Speed Options -100 100 100 100 35 16 16 0 30 0 -120 120 120 120 50 -150 150 150 150 65 Unit ns ns ns ns ns ns ns ns ns tAXQX tOH Output Hold Time From Addresses, CE# or OE#, Whichever Occurs First (Note 1) Notes: 1. Not 100% tested. 2. See Figure 11, on page 27 and Table 8 on page 27 for test specifications 3. VCC min. = 1.7V . tRC Addresses tACC CE# tD Addresses Stable OE# tOEH WE# HIGH Z Outputs tCE tOE tO HIGH Z Output Valid RESET# RY/BY# 0V Figure 13. Read Operations Timings 28 Am29SL800D 27546A6 January 23, 2007 DATA SHEET AC CHARACTERISTICS Table 11. Parameter JEDEC Std tREADY tREADY tRP tRH tRPD tRB Description RESET# Pin Low (During Embedded Algorithms) to Read or Write (see Note) RESET# Pin Low (NOT During Embedded Algorithms) to Read or Write (see Note) RESET# Pulse Width RESET# High Time Before Read (see Note) RESET# Low to Standby Mode RY/BY# Recovery Time Max Max Min Min Min Min All Speed Options 20 500 500 200 20 0 Unit µs ns ns ns µs ns Hardware Reset (RESET#) Note: Not 100% tested. RY/BY# CE#, OE# tRH RESET# tRP tReady Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms tReady RY/BY# tRB CE#, OE# RESET# tRP Figure 14. RESET# Timings January 23, 2007 27546A6 Am29SL800D 29 DATA SHEET AC CHARACTERISTICS Table 12. Parameter JEDEC Std tELFL/tELFH tFLQZ tFHQV Description CE# to BYTE# Switching Low or High BYTE# Switching Low to Output HIGH Z BYTE# Switching High to Output Active Max Max Min 50 90 50 100 -90 Word/Byte Configuration (BYTE#) Speed Options -100 10 60 120 60 150 -120 -150 Unit ns ns ns CE# OE# BYTE# BYTE# Switching from word to byte mode tELFL DQ0–DQ14 Data Output (DQ0–DQ14) Data Output Address Input DQ15/A-1 DQ15 Output tFLQZ tELFH BYTE# BYTE# Switching from byte to word mode DQ0–DQ14 Data Output Address Input tFHQV Figure 15. Data Output (DQ0–DQ14) DQ15 Output DQ15/A-1 BYTE# Timings for Read Operations CE# The falling edge of the last WE# signal WE# BYTE# tSET (tAS) tHOLD (tAH) Note: Refer to the Erase/Program Operations table for tAS and tAH specifications. Figure 16. BYTE# Timings for Write Operations 30 Am29SL800D 27546A6 January 23, 2007 DATA SHEET AC CHARACTERISTICS Table 13. Parameter JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX Std tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS tRB tBUSY Description Write Cycle Time (Note 1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recovery Time Before Write (OE# High to WE# Low) CE# Setup Time CE# Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation (Notes 1, 2) Word Sector Erase Operation (Notes 1, 2) VCC Setup Time Recovery Time from RY/BY# Program/Erase Valid to RY/BY# Delay Typ Typ Min Min Max 7 0.7 50 0 200 sec µs ns ns Min Min Min Min Min Min Min Min Min Min Min Typ 45 50 30 5 µs 45 45 50 50 0 0 0 0 0 60 70 -90 90 Erase/Program Operations Speed Options -100 100 0 60 60 70 70 -120 120 -150 150 Unit ns ns ns ns ns ns ns ns ns ns ns Notes: 1. Not 100% tested. 2. See the Table 16 on page 39 for more information. January 23, 2007 27546A6 Am29SL800D 31 DATA SHEET AC CHARACTERISTICS Program Command Sequence (last two cycles) tWC Addresses tAS Read Status Data (last two cycles) 555h PA tAH PA PA CE# tCH OE# tWP WE# tCS tDS tD Data tWPH tWHWH1 A0h PD tBUSY Status DOUT tRB RY/BY# VCC tVCS Notes: 1. PA = program address, PD = program data, DOUT is the true data at the program address. 2. Illustration shows device in word mode. Figure 17. Program Operation Timings 32 Am29SL800D 27546A6 January 23, 2007 DATA SHEET AC CHARACTERISTICS Erase Command Sequence (last two cycles) tWC Addresses 2AAh tAS Read Status Data SA 555h for chip erase VA tAH VA CE# tCH tW OE# WE# tCS tD tD tWP tWHWH Data 55h 30h 10 for Chip Erase In Progress Complete tBUSY tRB RY/BY# tVCS VCC Notes: 1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”). 2. Illustration shows device in word mode. Figure 18. Chip/Sector Erase Operation Timings January 23, 2007 27546A6 Am29SL800D 33 DATA SHEET AC CHARACTERISTICS tRC Addresses VA tACC tCE VA VA CE# tCH tOE tOEH OE# tDF tOH WE# DQ7 High Z Complement Complement True Valid Data High Z DQ0–DQ6 tBUSY RY/BY# Status Data Status Data True Valid Data Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle. Figure 19. Data# Polling Timings (During Embedded Algorithms) tRC Addresses VA tACC tCE VA VA VA CE# tCH tOE tOEH OE# tDF tOH WE# DQ6/DQ2 tBUS High Z Valid Status (first read) Valid Status (second read) Valid Status (stops toggling) Valid Data RY/BY# Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle. Figure 20. Toggle Bit Timings (During Embedded Algorithms) 34 Am29SL800D 27546A6 January 23, 2007 DATA SHEET AC CHARACTERISTICS Enter Embedded Erasing Erase Suspend Erase Enter Erase Suspend Program Erase Suspend Program Erase Resume Erase Suspend Read Erase Erase Complete WE# Erase Suspend Read DQ6 DQ2 Note: The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an erase-suspended sector. Figure 21. DQ2 vs. DQ6 Table 14. Parameter JEDEC Std tVIDR tRSP Description VID Rise and Fall Time Temporary Sector Unprotect All Speed Options Min Min 500 4 Unit ns µs RESET# Setup Time for Temporary Sector Unprotect 10 V RESET# 0 or 1.8 V tVIDR Program or Erase Command Sequence CE# tVIDR 0 or 1.8 V WE# tRSP RY/BY# Figure 22. Temporary Sector Unprotect Timing Diagram January 23, 2007 27546A6 Am29SL800D 35 DATA SHEET AC CHARACTERISTICS VID VIH RESET# SA, A6, A1, A0 Valid* Sector Protect/Unprotect Valid* Verify 40h Sector Protect: 150 µs Sector Unprotect: 15 ms Valid* Data 1 µs 60h 60h Status CE# WE# OE# * For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0. Figure 23. Sector Protect/Unprotect Timing Diagram 36 Am29SL800D 27546A6 January 23, 2007 DATA SHEET AC CHARACTERISTICS Table 15. Parameter JEDEC tAVAV tAVEL tELAX tDVEH tEHDX Std tWC tAS tAH tDS tDH tOES tGHEL tWLEL tEHWH tELEH tEHEL tWHWH1 tWHWH2 tGHEL tWS tWH tCP tCPH tWHWH1 tWHWH2 Description Write Cycle Time (Note 1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recovery Time Before Write (OE# High to WE# Low) WE# Setup Time WE# Hold Time CE# Pulse Width CE# Pulse Width High Programming Operation (Notes 1, 2) Sector Erase Operation (Notes 1, 2) Byte Word Min Min Min Min Min Min Min Min Min Min Min Typ Typ Typ 45 50 30 5 µs 7 0.7 sec 45 45 50 50 0 0 0 0 0 60 70 -90 90 Alternate CE# Controlled Erase/Program Operations Speed Options -100 100 0 60 60 70 70 -120 120 -150 150 Unit ns ns ns ns ns ns ns ns ns ns ns Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. January 23, 2007 27546A6 Am29SL800D 37 DATA SHEET AC CHARACTERISTICS 555 for program 2AA for erase PA for program SA for sector erase 555 for chip erase Data# Polling PA Addresses tWC tWH tAS tAH WE# tGHEL OE# tCP tWHWH1 or 2 CE# tWS tCPH tDS tDH tBUS Data tRH A0 for program 55 for erase PD for program 30 for sector erase 10 for chip erase DQ7# DOUT RESET# RY/BY# Notes: 1. PA = program address, PD = program data, DQ7# = complement of the data written, DOUT = data written 2. Figure indicates the last two bus cycles of command sequence. 3. Word mode address used as an example. Figure 24. Alternate CE# Controlled Write Operation Timings 38 Am29SL800D 27546A6 January 23, 2007 DATA SHEET ERASE AND PROGRAMMING PERFORMANCE Table 16. Parameter Sector Erase Time Chip Erase Time Byte Programming Time Word Programming Time Chip Programming Time (Note 3) Byte Mode Word Mode Erase and Programming Performance Typ (Note 1) 0.7 14 5 7 5.3 3.7 150 210 16 11 Max (Note 2) 15 Unit s s µs µs s s Excludes system level overhead (Note 5) Comments Excludes 00h programming prior to erasure (Note 4) Notes: 1. Typical program and erase times assume the following conditions: 25°C, 2.0 V VCC, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90°C, VCC = 1.8 V, 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 5 for further information on command definitions. 6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles. Table 17. Description Latchup Characteristics Min –1.0 V –0.5 V –100 mA Max 11.0 V VCC + 0.5 V +100 mA Input voltage with respect to VSS on all pins except I/O pins (including A9, OE#, and RESET#) Input voltage with respect to VSS on all I/O pins VCC Current Includes all pins except VCC. Test conditions: VCC = 1.8 V, one pin at a time. Table 18. Parameter Symbol CIN COUT CIN2 Parameter Description Input Capacitance Output Capacitance Control Pin Capacitance TSOP Pin Capacitance Test Setup VIN = 0 VOUT = 0 VIN = 0 Typ 6 8.5 7.5 Max 7.5 12 9 Unit pF pF pF Notes: 1. Sampled, not 100% tested. 2. Test conditions TA = 25°C, f = 1.0 MHz. Table 19. Parameter Minimum Pattern Data Retention Time Data Retention Test Conditions 150°C 125°C Min 10 20 Unit Years Years January 23, 2007 27546A6 Am29SL800D 39 DATA SHEET PHYSICAL DIMENSIONS TS 048—48-Pin Standard TSOP Dwg rev AA; 10/99 40 Am29SL800D 27546A6 January 23, 2007 DATA SHEET PHYSICAL DIMENSIONS FBA048—48-Ball Fine-Pitch Ball Grid Array (FBGA) 8.15 X 6.15 mm Package Dwg rev AF; 10/99 January 23, 2007 27546A6 Am29SL800D 41 DATA SHEET PHYSICAL DIMENSIONS FBC048—48-Ball Fine-Pitch Ball Grid Array (FBGA) 9 x 8 mm Package Dwg rev AF; 10/99 42 Am29SL800D 27546A6 January 23, 2007 DATA SHEET PHYSICAL DIMENSIONS VBK048—48 Ball Fine-Pitch Ball Grid Array (FBGA) 8.15 x 6.15 mm 0.10 (4X) D A D1 6 5 e 4 7 E 3 2 1 H G F E D C B A SE E1 PIN A1 CORNER INDEX MARK B 6 fb f 0.08M C f 0.15M C A B SD 7 A1 CORNER 10 TOP VIEW BOTTOM VIEW A A1 SEATING PLAN E A2 0.10 C C 0.08 C SIDE VIEW NOTES : PACKAGE JEDEC VBK 048 N/A 8.15 mm x 6.15 mm NOM PACKAG E 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. 2. ALL DIMENSIONS ARE IN MILLIMETERS. 3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT AS NOTED). NOT E OVERALL THICKNESS BALL HEIGHT BODY THICKNESS BODY SIZE BODY SIZE BALL FOOTPRINT BALL FOOTPRINT ROW MATRIX SIZE D DIRECTION ROW MATRIX SIZE E DIRECTION TOTAL BALL COUNT 0.43 BALL DIAMETER BALL PITCH SOLDER BALL PLACEMEN T DEPOPULATED SOLDER BALLS 4. e REPRESENTS THE SOLDER BALL GRID PITCH. SYMBOL A A1 A2 D E D1 E1 MD ME N fb e SD / SE MIN --0.18 0.62 NOM ------8.15 BSC. 6.15 BSC. 5.60 BSC. 4.00 BSC. 8 6 48 MAX 1.00 --0.76 5. SYMBOL "MD" IS THE BALL ATRIX SIZE IN THE ROW M "D" DIRECTION. SYMBOL "ME" IS THE BALL N MATRIX SIZE IN THE COLUM "E" DIRECTION. N IS THE TOTAL NUMBER OF SOLDER BALLS. 6 DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. 7 SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE POSITION CENTER OF THE SOLDER BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW PARALLEL TO THE ED DIMENSION, OR RESPECTIVELY, SD OR SE = 0.000. WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, SD OR SE = e/2 8. NOT USED. 9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS. 10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK, METALLIZED MARK INDENTATION OR OTHER MEANS. 3338 \ 16-038.25b 0.35 --0.80 BSC. 0.40 BSC. --- January 23, 2007 27546A6 Am29SL800D 43 DATA SHEET REVISION SUMMARY Revision A (February 4, 2003) Initial release. Revision A+4 (April 27, 2005) Added VBK048 package. Added Colophon. Updated Trademark. Revision A+1 (March 17, 2003) Ordering Information Corrected typo in table. Corrected typo to OPNs. Revision A+5 (February 17, 2006) Global Removed Reverse TSOP throughout. Revision A+2 (June 10, 2004) Ordering Information Added Pb-free package OPNs. Revision A6 (January 23, 2007) Erase and Program Operations table Changed tBUSY to a maximum specification. Revision A+3 (October 27, 2004) Updated VCC values Colophon The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion Inc. will not be liable to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior authorization by the respective government entity will be required for export of those products. Trademarks Copyright © 2003–2005 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. Copyright © 2006–2007 Spansion Inc. All Rights Reserved. Spansion, the Spansion logo, MirrorBit, ORNAND, HD-SIM, and combinations thereof are trademarks of Spansion Inc. Other names are for informational purposes only and may be trademarks of their respective owners. 44 Am29SL800D 27546A6 January 23, 2007