AM41PDS3224DT11IS

Am41PDS3224D Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG )XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG )XMLWVX Continuity of Specifications 7KHUH LV QR FKDQJH WR WKLV GDWDVKHHW DV D UHVXOW RI RIIHULQJ WKH GHYLFH DV D 6SDQVLRQ SURGXFW $Q\ FKDQJHV WKDW KDYH EHHQ PDGH DUH WKH UHVXOW RI QRUPDO GDWDVKHHW LPSURYHPHQW DQG DUH QRWHG LQ WKH GRFXPHQW UHYLVLRQ VXPPDU\ ZKHUH VXSSRUWHG )XWXUH URXWLQH UHYLVLRQV ZLOO RFFXU ZKHQ DSSURSULDWH DQG FKDQJHV ZLOO EH QRWHG LQ D UHYLVLRQ VXPPDU\ Continuity of Ordering Part Numbers $0' DQG )XMLWVX FRQWLQXH WR VXSSRUW H[LVWLQJ SDUW QXPEHUV EHJLQQLQJ ZLWK ³$P´ DQG ³0%0´ 7R RUGHU WKHVH SURGXFWV SOHDVH XVH RQO\ WKH 2UGHULQJ 3DUW 1XPEHUV OLVWHG LQ WKLV GRFXPHQW For More Information 3OHDVH FRQWDFW \RXU ORFDO $0' RU )XMLWVX VDOHV RIILFH IRU DGGLWLRQDO LQIRUPDWLRQ DERXW 6SDQVLRQ PHPRU\ VROXWLRQV Publication Number 26085 Revision A Amendment +1 Issue Date May 13, 2003 PRELIMINARY Am41PDS3224D Stacked Multi-Chip Package (MCP) Flash Memory and SRAM Am29PDS322D 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features ■ Power supply voltage of 1.8 to 2.2 volt ■ High performance — Access time as fast as 100 ns flash, 70 ns SRAM — — — — 24 mA active read current at 10 MHz for initial page read 0.5 mA active read current at 10 MHz for intra-page read 1 mA active read current at 20 MHz for intra-page read 200 nA in standby or automatic sleep mode ■ Package — 73-Ball FBGA ■ Minimum 1 million write cycles guaranteed per sector ■ 20 year data retention at 125°C — Reliable operation for the life of the system ■ Operating Temperature — –40°C to +85°C SOFTWARE FEATURES ■ Data Management Software (DMS) — AMD-supplied software manages data programming, enabling EEPROM emulation — Eases historical sector erase flash limitations Flash Memory Features ARCHITECTURAL ADVANTAGES ■ Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in other bank. — Zero latency between read and write operations ■ Erase Suspend/Erase Resume ■ Data# Polling and Toggle Bits ■ Unlock Bypass Program command — Reduces overall programming time when issuing multiple program command sequences ■ Page Mode Operation — 4 word page allows fast asynchronous reads ■ Dual Bank architecture — One 4 Mbit bank and one 28 Mbit bank HARDWARE FEATURES ■ Any combination of sectors can be erased ■ Ready/Busy# output (RY/BY#) ■ Hardware reset pin (RESET#) ■ WP#/ACC input pin — Write protect (WP#) function allows protection of two outermost boot sectors, regardless of sector protect status — Acceleration (ACC) function accelerates program timing ■ SecSi (Secured Silicon) Sector: Extra 64 KByte sector — Factory locked and identifiable: 16 byte Electronic Serial Number available for factory secure, random ID; verifiable as factory locked through autoselect function. ExpressFlash option allows entire sector to be available for factory-secured data — Customer lockable: Can be read, programmed, or erased just like other sectors. Once locked, data cannot be changed ■ Sector protection — Hardware method of locking a sector, either in-system or using programming equipment, to prevent any program or erase operation within that sector — Temporary Sector Unprotect allows changing data in protected sectors in-system ■ Zero Power Operation — Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero. ■ Top or bottom boot block ■ Manufactured on 0.23 µm process technology ■ Compatible with JEDEC standards — Pinout and software compatible with single-power-supply flash standard SRAM Features ■ Power dissipation — Operating: 2 mA typical — Standby: 0.5 µA typical PERFORMANCE CHARACTERISTICS ■ High performance — Random access time of 100 ns at 1.8 V to 2.2 V VCC ■ Ultra low power consumption (typical values) — 2.5 mA active read current at 1 MHz for initial page read ■ ■ ■ ■ CE1s# and CE2s Chip Select Power down features using CE1s# and CE2s Data retention supply voltage: 1.0 to 2.2 volt Byte data control: LB#s (DQ7–DQ0), UB#s (DQ15–DQ8) This document contains information on a product under development at Advanced Micro Devices. The information is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed product without notice. Publication# 26085 Rev: A Amendment/+1 Issue Date: May 13, 2002 Refer to AMD’s Website (www.amd.com) for the latest information. PRELIMINARY GENERAL DESCRIPTION The Am29PDS322D is a 32 Mbit, 1.8 V-only Flash memory organized as 2,097,152 words of 16 bits each. The device is designed to be programmed in system with standard system 1.8 V VCC s upply. This d evice ca n a lso be re prog ra mm ed in stand ard EPROM programmers. The Am29PDS322D offers fast page access time of 40 ns with random access time of 100 ns (at 1.8 V to 2.2 V VCC), allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write enable (WE), and output enable (OE) controls. The page size is 4 words. The device requires only a single 1.8 volt power supply f or both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. other flash sector, or may permanently lock their own code there. DMS (Data Management Software) allows systems to easily take advantage of the advanced architecture of the simultaneous read/write product line by allowing removal of EEPROM devices. DMS will also allow the system software to be simplified, as it will perform all functions necessary to modify data in file structures, as opposed to single-byte modifications. To write or update a particular piece of data (a phone number or configuration data, for example), the user only needs to state which piece of data is to be updated, and where the updated data is located in the system. This is a n a d v a n t a g e c o m p a re d to sy st e m s w h e re user-written software must keep track of the old data location, status, logical to physical translation of the data onto the Flash memory device (or memory devices), and more. Using DMS, user-written software does not need to interface with the Flash memory directly. Instead, the user's software accesses the Flash memory by calling one of only six functions. AMD provides this software to simplify system design and software integration efforts. The device offers complete compatibility with the JEDEC single-power-supply Flash command set standard . Commands are written to the command register using standard microprocessor write timings. Reading data out of the device is similar to reading from other Flash or EPROM devices. The host system can detect whether a program or erase operation is complete by using the device status bits: R Y/BY# pin, DQ7 (Data# Polling) and DQ6/DQ2 (toggle bits). After a program or erase cycle has been completed, the device automatically returns to the read mode. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection m easures include a low V CC d etector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory. This can be achieved in-system or via programming equipment. The device offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters the automatic sleep mode. Th e system can also place the de vice into the standby mode . Power consumption is greatly reduced in both modes. Simultaneous Read/Write Operations with Zero Latency The Simultaneous Read/Write architecture provides simultaneous operation b y dividing the memory space into two banks. The device can improve overall system performance by allowing a host system to program or erase in one bank, then immediately and simultaneously read from the other bank, with zero latency. This releases the system from waiting for the completion of program or erase operations. The device is divided as shown in the following table: Bank 1 Sectors Quantity 8 7 Size 4 Kwords 56 32 Kwords 4 Mbits total 28 Mbits total 32 Kwords Bank 2 Sectors Quantity Size Am29PDS322D Features The S ecSi (Secured Silicon) Sector i s an extra 64 KByte sector capable of being permanently locked by AMD or customers. The SecSi Indicator Bit (DQ7) is permanently set to a 1 if the part is factory locked, and set to a 0 if c ustomer lockable. This way, customer lockable parts can never be used to replace a factory locked part. Factory locked parts provide several options. The SecSi Sector m ay store a secure, random 16 byte ESN (Electronic Serial Number), customer code (programmed through AMD’s ExpressFlash service), or both. Customer Lockable parts may utilize the SecSi Sector as bonus space, reading and writing like any 2 Am41PDS3224D May 13, 2002 PRELIMINARY TABLE OF CONTENTS Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 5 MCP Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . 5 Flash Memory Block Diagram. . . . . . . . . . . . . . . . 6 Connection Diagram . . . . . . . . . . . . . . . . . . . . . . . . 7 Special Package Handling Instructions .................................... 7 Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 9 MCP Device Bus Operations. . . . . . . . . . . . . . . . 10 Table 1. Device Bus Operations—SRAM Word Mode, CIOs = VCC 10 Table 2. Device Bus Operations—SRAM Byte Mode, CIOs = VSS 11 Chip Erase Command Sequence ........................................... 24 Sector Erase Command Sequence ........................................ 25 Erase Suspend/Erase Resume Commands ........................... 25 Figure 5. Erase Operation.............................................................. 26 Table 10. Am29PDS322D Command Definitions ........................... 27 Flash Write Operation Status . . . . . . . . . . . . . . . 28 DQ7: Data# Polling ................................................................. 28 Figure 6. Data# Polling Algorithm .................................................. 28 RY/BY#: Ready/Busy# ............................................................ 29 DQ6: Toggle Bit I .................................................................... 29 Figure 7. Toggle Bit Algorithm........................................................ 29 Flash Device Bus Operations . . . . . . . . . . . . . . . 12 Requirements for Reading Array Data ................................... 12 Read Mode ............................................................................. 12 Random Read (Non-Page Mode Read) .............................. 12 Page Mode Read .................................................................... 12 Table 3. Page Word Mode ..............................................................12 DQ2: Toggle Bit II ................................................................... 30 Reading Toggle Bits DQ6/DQ2 ............................................... 30 DQ5: Exceeded Timing Limits ................................................ 30 DQ3: Sector Erase Timer ....................................................... 30 Table 11. Write Operation Status ................................................... 31 Writing Commands/Command Sequences ............................ 12 Accelerated Program Operation .......................................... 12 Autoselect Functions ........................................................... 13 Simultaneous Read/Write Operations with Zero Latency ....... 13 Standby Mode ........................................................................ 13 Automatic Sleep Mode ........................................................... 13 RESET#: Hardware Reset Pin ............................................... 13 Output Disable Mode .............................................................. 14 Table 4. Am29PDS322DT Top Boot Sector Addresses ..................14 Table 5. Am29PDS322DT Top Boot SecSi Sector Address ...........15 Table 6. Am29PDS322DB Bottom Boot Sector Addresses ............15 Am29PDS322DB Bottom Boot SecSi Sector Address.................... 17 Absolute Maximum Ratings . . . . . . . . . . . . . . . . 32 Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 32 Industrial (I) Devices ............................................................ 32 VCCf/VCC s Supply Voltage ................................................... 32 Flash DC Characteristics . . . . . . . . . . . . . . . . . . 33 CMOS Compatible .................................................................. 33 SRAM DC and Operating Characteristics . . . . . 34 Figure 10. ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents) .............................................................................. 35 Figure 11. Typical ICC1 vs. Frequency ............................................ 35 Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Figure 12. Test Setup.................................................................... 36 Table 12. Test Specifications ......................................................... 36 Autoselect Mode ..................................................................... 17 Sector/Sector Block Protection and Unprotection .................. 17 Table 8. Top Boot Sector/Sector Block Addresses for Protection/Unprotection ........................................................................................17 Table 9. Bottom Boot Sector/Sector Block Addresses for Protection/Unprotection .............................................................................18 Key To Switching Waveforms . . . . . . . . . . . . . . . 36 Figure 13. Input Waveforms and Measurement Levels ................. 36 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 37 SRAM CE#s Timing ................................................................ 37 Figure 14. Timing Diagram for Alternating Between SRAM to Flash ................................................................ 37 Figure 15. Conventional Read Operation Timings ......................... 38 Figure 16. Page Mode Read Timings ............................................ 39 Write Protect (WP#) ................................................................ 18 Temporary Sector/Sector Block Unprotect ............................. 18 Figure 1. Temporary Sector Unprotect Operation........................... 19 Figure 2. In-System Sector/Sector Block Protect and Unprotect Algorithms .............................................................................................. 20 Hardware Reset (RESET#) .................................................... 40 Figure 17. Reset Timings ............................................................... 40 Flash Erase and Program Operations .................................... 41 Figure 18. Program Operation Timings.......................................... Figure 19. Accelerated Program Timing Diagram.......................... Figure 20. Chip/Sector Erase Operation Timings .......................... Figure 21. Back-to-back Read/Write Cycle Timings ...................... Figure 22. Data# Polling Timings (During Embedded Algorithms). Figure 23. Toggle Bit Timings (During Embedded Algorithms)...... Figure 24. DQ2 vs. DQ6................................................................. 42 42 43 44 44 45 45 SecSi (Secured Silicon) Sector Flash Memory Region .......... 21 Factory Locked: SecSi Sector Programmed and Protected at the Factory ...................................................................... 21 Hardware Data Protection ...................................................... 21 Low VCC Write Inhibit ........................................................... 21 Write Pulse “Glitch” Protection ............................................ 22 Logical Inhibit ...................................................................... 22 Power-Up Write Inhibit ......................................................... 22 Flash Command Definitions . . . . . . . . . . . . . . . . 22 Reading Array Data ................................................................ 22 Reset Command ..................................................................... 22 Autoselect Command Sequence ............................................ 22 Enter SecSi Sector/Exit SecSi Sector Command Sequence .. 23 Word Program Command Sequence ..................................... 23 Unlock Bypass Command Sequence .................................. 23 Figure 3. Unlock Bypass Algorithm ................................................. 24 Figure 4. Program Operation .......................................................... 24 Temporary Sector/Sector Block Unprotect ............................. 46 Figure 25. Temporary Sector/Sector Block Unprotect Timing Diagram.............................................................................. 46 Figure 26. Sector/Sector Block Protect and Unprotect Timing Diagram.............................................................................. 47 Alternate CE#f Controlled Erase and Program Operations .... 48 Figure 27. Flash Alternate CE#f Controlled Write (Erase/Program) Operation Timings............................................................................... 49 SRAM AC Characteristics . . . . . . . . . . . . . . . . . . 50 Read Cycle ............................................................................. 50 Figure 28. SRAM Read Cycle—Address Controlled...................... 50 Figure 29. SRAM Read Cycle ........................................................ 51 May 13, 2002 Am41PDS3224D 3 PRELIMINARY Write Cycle ............................................................................. 52 Figure 30. SRAM Write Cycle—WE# Control ................................. 52 Figure 31. SRAM Write Cycle—CE1#s Control .............................. 53 Figure 32. SRAM Write Cycle—UB#s and LB#s Control ................ 54 SRAM Data Retention . . . . . . . . . . . . . . . . . . . . . 56 Figure 33. CE1#s Controlled Data Retention Mode....................... 56 Figure 34. CE2s Controlled Data Retention Mode......................... 56 Flash Erase And Programming Performance . . 55 Flash Latchup Characteristics . . . . . . . . . . . . . . 55 Package Pin Capacitance . . . . . . . . . . . . . . . . . . 55 Flash Data Retention . . . . . . . . . . . . . . . . . . . . . . 55 Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 57 FLB073—73-Ball Fine-Pitch Grid Array 8 x 11.6 mm ............. 57 Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 58 Revision A (February 18, 2002) .............................................. 58 Revision A+1 (May 13, 2002) ................................................. 58 4 Am41PDS3224D May 13, 2002 PRELIMINARY PRODUCT SELECTOR GUIDE Part Number Speed Options Standard Voltage Range: VCC = 1.8–2.2 V Am41PDS3224D Flash Memory 10 100 100 35 40 11 110 110 40 45 SRAM 10, 11 70 70 35 N/A Max Access Time (ns) CE# Access (ns) OE# Access (ns) Max Page Address Access Time (ns) MCP BLOCK DIAGRAM VCCf VSS RY/BY# A20 to A0 WP#/ACC RESET# CE#f A20 to A0 32 M Bit Flash Memory DQ15 to DQ0 DQ15 to DQ0 VCCs/VCCQ VSS/VSSQ A0 toto A0 A17 A19 SA LB#s UB#s WE# OE# CE1#s CE2s CIOs 4 M Bit Static RAM DQ15 to DQ0 May 13, 2002 Am41PDS3224D 5 PRELIMINARY FLASH MEMORY BLOCK DIAGRAM OE# VCC VSS Y-Decoder A20–A0 Upper Bank Address Upper Bank Latches and Control Logic RY/BY# A20–A0 RESET# WE# CE# STATE CONTROL & COMMAND REGISTER X-Decoder Status DQ15–DQ0 Control DQ15–DQ0 DQ15–DQ0 A20–A0 X-Decoder Lower Bank A20–A0 Lower Bank Address OE# 6 Am41PDS3224D Latches and Control Logic Y-Decoder DQ15–DQ0 A20–A0 May 13, 2002 PRELIMINARY CONNECTION DIAGRAM 73-Ball FBGA Top View A1 NC A10 NC Flash only B1 NC B5 NC B6 NC B10 NC SRAM only C1 NC C3 A7 C4 D4 UB# C5 D5 E5 RY/BY# C6 D6 E6 A20 C7 A8 C8 A11 Shared LB# WP#/ACC WE# D2 A3 D3 A6 D7 A19 D8 A12 D9 A15 RESET# CE2s E2 A2 E3 A5 E4 A18 E7 A9 E8 A13 E9 NC F1 NC F2 A1 F3 A4 F4 A17 F7 A10 F8 A14 F9 NC F10 NC G1 NC G2 A0 G3 VSS G4 DQ1 G7 DQ6 G8 SA G9 A16 G10 NC H2 CE#f H3 OE# H4 DQ9 H5 DQ3 H6 DQ4 H7 DQ13 H8 DQ15 H9 NC J2 CE1#s J3 DQ0 J4 DQ10 J5 VCCf J6 VCCs J7 DQ12 J8 DQ7 J9 VSS K3 DQ8 K4 DQ2 K5 DQ11 K6 CIOs K7 DQ5 K8 DQ14 L1 NC L5 NC L6 NC L10 NC M1 NC M10 NC Special Package Handling Instructions S pecial handling is required for Flash Memory products in molded packages (TSOP, BGA, PLCC, PDIP, SSOP). The package and/or data integrity may be compromised if the package body is exposed to temperatures above 150°C for prolonged periods of time. May 13, 2002 Am41PDS3224D 7 PRELIMINARY PIN DESCRIPTION A17–A0 A20–A18 SA DQ15–DQ0 CE#f CE1#s CE2s OE# WE# RY/BY# UB#s LB#s CIOs = 18 Address Inputs (Common) = 3 Address Inputs (Flash) = Highest Order Address Pin (SRAM) Byte mode = 16 Data Inputs/Outputs (Common) = Chip Enable (Flash) = Chip Enable 1 (SRAM) = Chip Enable 2 (SRAM) = Output Enable (Common) = Write Enable (Common) = Ready/Busy Output (Flash) = Upper Byte Control (SRAM) = Lower Byte Control (SRAM) = I/O Configuration (SRAM) CIOs = VIH = Word mode (x16), CIOs = VIL = Byte mode (x8) = Hardware Reset Pin, Active Low = Hardware Write Protect/ Acceleration Pin (Flash) = Flash 1.8 volt-only single power supply (see Product Selector Guide for speed options and voltage supply tolerances) = SRAM Power Supply = Device Ground (Common) = Pin Not Connected Internally LOGIC SYMBOL 18 A17–A0 A20–A18 SA CE#f CE1#s CE2s OE# WE# WP#/ACC RESET# UB#s LB#s CIOs RY/BY# DQ15–DQ0 16 or 8 RESET# WP#/ACC VCCf VCCs VSS NC 8 Am41PDS3224D May 13, 2002 PRELIMINARY ORDERING INFORMATION The order number (Valid Combination) is formed by the following: Am41PDS322 4 D T 10 I T TAPE AND REEL T = 7 inches S = 13 inches TEMPERATURE RANGE I = Industrial (–40°C to +85°C) SPEED OPTION See “Product Selector Guide” on page 5 BOOT CODE SECTOR ARCHITECTURE T = Top sector B = Bottom sector PROCESS TECHNOLOGY D = 0.23 µm SRAM DEVICE DENSITY 4 = 4 Mbits AMD DEVICE NUMBER/DESCRIPTION Am41PDS3224D Stacked Multi-Chip Package (MCP) Flash Memory and SRAM Am29PDS322D 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM Valid Combinations Order Number Am41PDS3224DT10I Am41PDS3224DB10I T, S Am41PDS3224DT11I Am41PDS3224DB11I M410000079 M41000007A Package Marking M410000077 M410000078 Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations May 13, 2002 Am41PDS3224D 9 PRELIMINARY MCP DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory locat io n. Th e re g ist e r is a la t ch u se d t o st or e t h e commands, along with the address and data information needed to execute the command. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. Tables 1–2 list the device bus operations, the inputs and control levels they require, and the resulting output. The following subsections describe each of these operations in further detail. Table 1. Device Bus Operations—SRAM Word Mode, CIOs = VCC Operation (Notes 1, 2) CE#f L CE1#s H X H X H X L H X H CE2s X L X L X L H X L X L X L X L OE# WE# L H SA X Addr. AIN LB#s (Note 3) UB#s (Note 3) RESET# H WP#/ACC (Note 4) L/H DQ7– DQ0 DOUT DQ15– DQ8 DOUT Read from Flash X X Write to Flash L VCC ± 0.3 V L H L X AIN X X H VCC ± 0.3 V H (Note 4) DIN DIN Standby X H H X X H H X X X X X X X X X SADD, A6 = L, A1 = H, A0 = L SADD, A6 = H, A1 = H, A0 = L X X L X X X X L X H High-Z High-Z Output Disable Flash Hardware Reset Sector Protect (Note 5) L/H High-Z High-Z X L L/H High-Z High-Z L X H H L X X X VID L/H DIN X Sector Unprotect (Note 5) Temporary Sector Unprotect L X H X H L X X X VID (Note 6) DIN X X X X X X L X L L H L L H VID (Note 6) DIN DOUT High-Z DOUT DOUT High-Z DIN DIN High-Z Read from SRAM H L H L H X AIN H L L H X High-Z DOUT DIN Write to SRAM H L H X L X AIN H L H L/H High-Z DIN Legend: L = Logic Low = VIL, H = Logic High = VIH , VID = 9–11 V, VHH = 9.0 ± 0.5 V, X = Don’t Care, SA = SRAM Address Input, Byte Mode, SADD = Flash Sector Address, AIN = Address In, DIN = Data In, DOUT = Data Out Notes: 1. Other operations except for those indicated in this column are inhibited. 2. Do not apply CE#f = VIL, CE1#s = VIL and CE2s = VIH at the same time. 3. Don’t care or open LB#s or UB#s. 4. If WP#/ACC = VIL , the boot sectors will be protected. If WP#/ACC = VIH the boot sectors protection will be removed. If WP#/ACC = VACC (9V), the program time will be reduced by 40%. 5. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector/Sector Block Protection and Unprotection” section. 6. If WP#/ACC = VIL, the two outermost boot sectors remain protected. If WP#/ACC = VIH , the two outermost boot sector protection depends on whether they were last protected or unprotected using the method described in “Sector/Sector Block Protection and Unprotection”. If WP#/ACC = VHH, all sectors will be unprotected. 10 Am41PDS3224D May 13, 2002 PRELIMINARY Table 2. Operation (Notes 1, 2) Read from Flash CE#f CE1#s H L X H X Standby Output Disable Flash Hardware Reset VCC ± 0.3 V L X H X L H X H Sector Protect (Note 5) L X H Sector Unprotect (Note 5) L X H X H H X L L L X L H H X L X X H L X SA SA AIN AIN AIN X X X X X X VID H H (Note 6) X X DIN DOUT DIN High-Z High-Z High-Z Device Bus Operations—SRAM Byte Mode, CIOs = VSS CE2s X L X L X L H X L X L X H L X H L X X X X X SADD, A6 = L, A1 = H, A0 = L SADD, A6 = H, A1 = H, A0 = L X X L L/H High-Z High-Z X H X H X SA X X X DNU X DNU L H X AIN X X H L/H DOUT DOUT OE# WE# SA Addr. LB#s UB#s RESET# (Note 3) (Note 3) WP#/ACC (Note 4) DQ7– DQ0 DQ15– DQ8 Write to Flash L H L X AIN X X H VCC ± 0.3 V H (Note 3) DIN DIN H L/H High-Z High-Z High-Z High-Z X X VID L/H DIN X X X VID (Note 6) DIN X Temporary Sector Unprotect Read from SRAM Write to SRAM Legend: L = Logic Low = VIL, H = Logic High = VIH , VID = 9–11 V, VHH = 9.0 ± 0.5 V, X = Don’t Care, SA = SRAM Address Input, Byte Mode, SADD = Flash Sector Address, AIN = Address In, DIN = Data In, DOUT = Data Out, DNU = Do Not Use Notes: 1. Other operations except for those indicated in this column are inhibited. 2. Do not apply CE#f = VIL, CE1#s = VIL and CE2s = VIH at the same time. 3. Don’t care or open LB#s or UB#s. 4. If WP#/ACC = VIL , the boot sectors will be protected. If WP#/ACC = VIH the boot sectors protection will be removed. If WP#/ACC = VACC (9V), the program time will be reduced by 40%. 5. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector/Sector Block Protection and Unprotection” section. 6. If WP#/ACC = VIL, the two outermost boot sectors remain protected. If WP#/ACC = VIH , the two outermost boot sector protection depends on whether they were last protected or unprotected using the method described in “Sector/Sector Block Protection and Unprotection”. If WP#/ACC = VHH, all sectors will be unprotected. May 13, 2002 Am41PDS3224D 11 PRELIMINARY FLASH DEVICE BUS OPERATIONS Requirements for Reading Array Data To read array data from the outputs, the system must drive the CE#f and OE# pins to VIL. CE#f is the power control and selects the device. OE# is the output control and gates array data to the output pins. WE# should remain at VIH. The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. Each bank remains enabled for read access until the command register contents are altered. See “Requirements for Reading Array Data” for more information. Refer to the AC Read-Only Operations table for timing specifications and to Figure 15 for the timing diagram. ICC1 in the DC Characteristics table represents the active current specification for reading array data. within that Page) are equivalent to tPACC. When CE# is deasserted and reasserted for a subsequent access, the access time is tACC or tCE. Here again, CE# selects the device and OE# is the output control and should be used to gate data to the output pins if the device is selected. Fast Page mode accesses are obtained by keeping A20–A2 constant and changing A1–A0 to select the specific word within that page. See Figure 16 for timing specifications. The following table determines the specific word within the selected page: Table 3. Page Word Mode Word Word 0 Word 1 Word 2 Word 3 A1 0 0 1 1 A0 0 1 0 1 Writing Commands/Command Sequences To write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH. The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the Unlock Bypass mode, only two write cycles are required to program a word, instead of four. The “Word Program Command Sequence” section has details on programming data to the device using both standard and Unlock Bypass command sequences. An erase operation can erase one sector, multiple sectors, or the entire device. Table 3 indicates the address space that each sector occupies. ICC2f in the DC Characteristics table represents the active current specification for the write mode. The Measurements performed by placing a 50Ω termination on the data pin with a bias of VCC/2. The time from OE# high to the data bus driven to VCC/2 is taken as tDFAC Characteristics. section contains timing specification tables and timing diagrams for write operations. Accelerated Program Operation The device offers accelerated program operations through the ACC function. This is one of two functions provided by the WP#/ACC pin. This function is primarily intended to allow faster manufacturing throughput at the factory. If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock Bypass mode, temporarily unprotects any protected sectors, Read Mode Random Read (Non-Page Mode Read) The device has two control functions which must be satisfied in order to obtain data at the outputs. CE# is the power control and should be used for device selection. OE# is the output control and should be used to gate data to the output pins if the device is selected. Address access time (tACC) is equal to the delay from stable addresses to valid output data. The chip enable access time (t CE ) is the delay from the stable addresses and stable CE# to valid data at the output pins. The output enable access time is the delay from the falling edge of OE# to valid data at the output pins (assuming the addresses have been stable for at least tACC–tOE time). Page Mode Read The device is capable of fast Page mode read and is compatible with the Page mode Mask ROM read operation. This mode provides faster read access speed for random locations within a page. The Page size of the device is 4 words. The appropriate Page is selected by the higher address bits A20–A0 and the LSB bits A1–A0 determine the specific word within that page. This is an asynchronous operation with the microprocessor supplying the specific word location. The random or initial page access is equal to tACC or tCE and subsequent Page read accesses (as long as the locations specified by the microprocessor fall 12 Am41PDS3224D May 13, 2002 PRELIMINARY and uses the higher voltage on the pin to reduce the time required for program operations. The system would use a two-cycle program command sequence as required by the Unlock Bypass mode. Removing VHH from the ACC pin returns the device to normal operation. Autoselect Functions If the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on DQ15–DQ0. Standard read cycle timings apply in this mode. Refer to the Autoselect Mode and Autosel ect Comm and S equence sec tions fo r m ore information. this mode when addresses remain stable for t ACC + 30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. Automatic sleep mode current is drawn when CE# = V SS ± 0.3 V and all inputs are held at VCC ± 0.3 V. If CE# and RESET# voltages are not held within these tolerances, the automatic sleep mode current will be greater. ICC5f in the Flash DC Characteristics table represents the automatic sleep mode current specification. RESET#: Hardware Reset Pin The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/write commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity. Current is reduced for the duration of the RESET# pulse. When RESET# is held at V SS ± 0.3 V, the device draws CMOS standby current (ICC3 f). If RESET# is held at V IL but not within VSS ± 0.3 V, the standby current will be greater. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash memory, enabling the system to read the boot-up firmware from the Flash memory. If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the internal reset operation is complete, which requires a time of tREADY ( during Embedded Algorithms). The system can thus mon itor RY/BY# to de term ine whether the reset operation is complete. If RESET# is asserted when a program or erase operation is not executing (RY/BY# pin is “1”), the reset operation is completed within a time of t READY (not during Embedded Algorithms). The system can read data t RH after the RESET# pin returns to VIH. Refer to the AC Characteristics tables for RESET# parameters and to Figure 17 for the timing diagram. Simultaneous Read/Write Operations with Zero Latency This device is capable of reading data from one bank of memory while programming or erasing in the other bank of memory. An erase operation may also be suspended to read from or program to another location with in the same bank (e xce pt the sector being erased). Figure 21 shows how read and write cycles may be initiated for simultaneous operation with zero latency. ICC6 and ICC7 in the Flash DC Characteristics t a b le re p r e se n t t h e cu r re n t s p e cif ic a t io n s fo r read-while-program and read-while-erase, respectively. Standby Mode When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. The device enters the CMOS standby mode when the CE#f and RESET# pins are both held at VCC ± 0.3 V. (Note that this is a more restricted voltage range than V IH .) If CE#f and RESET# are held at V IH , but not within V CC ± 0.3 V, the device will be in the standby mode, but the standby current will be greater. The device requires standard access time (t CE ) for read access when the device is in either of these standby modes, before it is ready to read data. If the device is deselected during erasure or programming, the device draws active current until the operation is completed. ICC3 in the Flash DC Characteristics table represents the standby current specification. Output Disable Mode When the OE# input is at VIH, output from the device is disabled. The output pins are placed in the high impedance state. Automatic Sleep Mode The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables May 13, 2002 Am41PDS3224D 13 PRELIMINARY Table 4. Bank Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 SA35 SA36 SA37 SA38 SA39 SA40 SA41 SA42 SA43 Am29PDS322DT Top Boot Sector Addresses Sector Size (Kwords) 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 (x16) Address Range 000000h–07FFFh 008000h–0FFFFh 010000h–17FFFh 018000h–01FFFFh 020000h–027FFFh 028000h–02FFFFh 030000h–037FFFh 038000h–03FFFFh 040000h–047FFFh 048000h–04FFFFh 050000h–057FFFh 058000h–05FFFFh 060000h–067FFFh 068000h–06FFFFh 070000h–077FFFh 078000h–07FFFFh 080000h–087FFFh 088000h–08FFFFh 090000h–097FFFh 098000h–09FFFFh 0A0000h–0A7FFFh 0A8000h–0AFFFFh 0B0000h–0B7FFFh 0B8000h–0BFFFFh 0C0000h–0C7FFFh 0C8000h–0CFFFFh 0D0000h–0D7FFFh 0D8000h–0DFFFFh 0E0000h–0E7FFFh 0E8000h–0EFFFFh 0F0000h–0F7FFFh 0F8000h–0FFFFFh 100000h–107FFFh 108000h–10FFFFh 110000h–117FFFh 118000h–11FFFFh 120000h–127FFFh 128000h–12FFFFh 130000h–137FFFh 138000h–13FFFFh 140000h–147FFFh 148000h–14FFFFh 150000h–157FFFh 158000h–15FFFFh Sector Address A20–A12 000000xxx 000001xxx 000010xxx 000011xxx 000100xxx 000101xxx 000110xxx 000111xxx 001000xxx 001001xxx 001010xxx 001011xxx 001100xxx 001101xxx 001110xxx 001111xxx 010000xxx 010001xxx 010010xxx 010011xxx 010100xxx 010101xxx 010110xxx 010111xxx 011000xxx 011001xxx 011010xxx 011011xxx 011100xxx 011101xxx 011110xxx 011111xxx 100000xxx 100001xxx 100010xxx 100011xxx 100100xxx 100101xxx 100110xxx 100111xxx 101000xxx 101001xxx 101010xxx 101011xxx 14 Bank 2 Am41PDS3224D May 13, 2002 PRELIMINARY Table 4. Bank Sector SA44 SA45 SA46 SA47 SA48 SA49 SA50 SA51 SA52 SA53 SA54 SA55 SA56 SA57 SA58 SA59 SA60 SA61 SA62 SA63 SA64 SA65 SA66 SA67 SA68 SA69 SA70 Am29PDS322DT Top Boot Sector Addresses (Continued) Sector Address A20–A12 101100xxx 101101xxx 101110xxx 101111xxx 110000xxx 110001xxx 110010xxx 110011xxx 110100xxx 110101xxx 110110xxx 110111xxx 111000xxx 111001xxx 111010xxx 111011xxx 111100xxx 111101xxx 111110xxx 111111000 111111001 111111010 111111011 111111100 111111101 111111110 111111111 Sector Size (Kwords) 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 4 4 4 4 4 4 4 4 (x16) Address Range 160000h–167FFFh 168000h–16FFFFh 170000h–177FFFh 178000h–17FFFFh 180000h–187FFFh 188000h–18FFFFh 190000h–197FFFh 198000h–19FFFFh 1A0000h–1A7FFFh 1A8000h–1AFFFFh 1B0000h–1B7FFFh 1B8000h–1BFFFFh 1C0000h–1C7FFFh 1C8000h–1CFFFFh 1D0000h–1D7FFFh 1D8000h–1DFFFFh 1E0000h–1E7FFFh 1E8000h–1EFFFFh 1F0000h–1F7FFFh 1F8000h–1F8FFFh 1F9000h–1F9FFFh 1FA000h–1FAFFFh 1FB000h–1FBFFFh 1FC000h–1FCFFFh 1FD000h–1FDFFFh 1FE000h–1FEFFFh 1FF000h–1FFFFFh Bank 1 Bank 2 Table 5. Am29PDS322DT Top Boot SecSi Sector Address Sector Size 32 (x16) Address Range 1F8000h–1FFFFh Sector Address A20–A12 111111xxx Table 6. Bank Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 Am29PDS322DB Bottom Boot Sector Addresses Sector Size (Kwords) 4 4 4 4 4 4 4 4 32 32 32 32 32 32 32 (x16) Address Range 000000h–000FFFh 001000h–001FFFh 002000h–002FFFh 003000h–003FFFh 004000h–004FFFh 005000h–005FFFh 006000h–006FFFh 007000h–007FFFh 008000h–00FFFFh 010000h–017FFFh 018000h–01FFFFh 020000h–027FFFh 028000h–02FFFFh 030000h–037FFFh 038000h–03FFFFh Sector Address A20–A12 000000000 000000001 000000010 000000011 000000100 000000101 000000110 000000111 000001xxx 000010xxx 000011xxx 000100xxx 000101xxx 000110xxx 000111xxx May 13, 2002 Bank 1 Am41PDS3224D 15 PRELIMINARY Table 6. Bank Sector SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 SA35 SA36 SA37 SA38 SA39 SA40 SA41 SA42 SA43 SA44 SA45 SA46 SA47 SA48 SA49 SA50 SA51 SA52 SA53 SA54 SA55 SA56 SA57 SA58 SA59 SA60 SA61 SA62 Am29PDS322DB Bottom Boot Sector Addresses (Continued) Sector Address A20–A12 001000xxx 001001xxx 001010xxx 001011xxx 001100xxx 001101xxx 001110xxx 001111xxx 010000xxx 010001xxx 010010xxx 010011xxx 010100xxx 010101xxx 010110xxx 010111xxx 011000xxx 011001xxx 011010xxx 011011xxx 011100xxx 011101xxx 011110xxx 011111xxx 100000xxx 100001xxx 100010xxx 100011xxx 100100xxx 100101xxx 100110xxx 100111xxx 101000xxx 101001xxx 101010xxx 101011xxx 101100xxx 101101xxx 101110xxx 101111xxx 111000xxx 110001xxx 110010xxx 110011xxx 110100xxx 110101xxx 110110xxx 110111xxx Sector Size (Kwords) 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 (x16) Address Range 040000h–047FFFh 048000h–04FFFFh 050000h–057FFFh 058000h–05FFFFh 060000h–067FFFh 068000h–06FFFFh 070000h–077FFFh 078000h–07FFFFh 080000h–087FFFh 088000h–08FFFFh 090000h–097FFFh 098000h–09FFFFh 0A0000h–0A7FFFh 0A8000h–0AFFFFh 0B0000h–0B7FFFh 0B8000h–0BFFFFh 0C0000h–0C7FFFh 0C8000h–0CFFFFh 0D0000h–0D7FFFh 0D8000h–0DFFFFh 0E0000h–0E7FFFh 0E8000h–0EFFFFh 0F0000h–0F7FFFh 0F8000h–0FFFFFh 100000h–107FFFh 108000h–10FFFFh 110000h–117FFFh 118000h–11FFFFh 120000h–127FFFh 128000h–12FFFFh 130000h–137FFFh 138000h–13FFFFh 140000h–147FFFh 148000h–14FFFFh 150000h–157FFFh 158000h–15FFFFh 160000h–167FFFh 168000h–16FFFFh 170000h–177FFFh 178000h–17FFFFh 180000h–187FFFh 188000h–18FFFFh 190000h–197FFFh 198000h–19FFFFh 1A0000h–1A7FFFh 1A8000h–1AFFFFh 1B0000h–1B7FFFh 1B8000h–1BFFFFh 16 Bank 2 Am41PDS3224D May 13, 2002 PRELIMINARY Table 6. Bank Sector SA63 SA64 SA65 SA66 SA67 SA68 SA69 SA70 Am29PDS322DB Bottom Boot Sector Addresses (Continued) Sector Address A20–A12 111000xxx 111001xxx 111010xxx 111011xxx 111100xxx 111101xxx 111110xxx 111111xxx Sector Size (Kwords) 32 32 32 32 32 32 32 32 (x16) Address Range 1C0000h–1C7FFFh 1C8000h–1CFFFFh 1D0000h–1D7FFFh 1D8000h–1DFFFFh 1E0000h–1E7FFFh 1E8000h–1EFFFFh 1F0000h–1F7FFFh 1F8000h–1FFFFFh Bank 2 Table 7. Am29PDS322DB Bottom Boot SecSi Sector Address Sector Address A20–A12 000000xxx Sector Size 32 (x16) Address Range 00000h-07FFFh Autoselect Mode The autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on DQ15–DQ0. This mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. The autoselect codes can also be accessed in-system through the command register. The host system can issue the autoselect command via the command register, as shown in Table 10. This method does not require V ID . Refer to the Autoselect Command Sequence section for more information. Table 8. Sector Group SGA0 SGA1 SGA2 SGA3 SGA4 SGA5 SGA6 SGA7 SGA8 SGA9 SGA10 SGA11 SGA12 SGA13 SGA14 SGA15 SGA16 SGA17 SGA18 SGA19 SGA20 SGA21 SGA22 SGA23 SGA24 Top Boot Sector/Sector Block Addresses for Protection/Unprotection Sectors SA0 SA1–SA3 SA4–SA7 SA8–SA11 SA12–SA15 SA16–SA19 SA20–SA23 SA24–SA27 SA28–SA31 SA32–SA35 SA36–SA39 SA40–SA43 SA44–SA47 SA48–SA51 SA52–SA55 SA56–SA59 SA60–SA62 SA63 SA64 SA65 SA66 SA67 SA68 SA69 SA70 A20–A12 000000XXX 00001XXXX 0001XXXXX 0010XXXXX 0011XXXXX 0100XXXXX 0101XXXXX 0110XXXXX 0111XXXXX 1000XXXXX 1001XXXXX 1010XXXXX 1011XXXXX 1100XXXXX 1101XXXXX 1110XXXXX 111100XXX 111111000 111111001 111111010 111111011 111111100 111111101 111111110 111111111 Sector/ Sector Block Size 64 (1x64) Kbytes 192 (3x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 192 (3x64) Kbytes 8 Kbytes 8 Kbytes 8 Kbytes 8 Kbytes 8 Kbytes 8 Kbytes 8 Kbytes 8 Kbytes Sector/Sector Block Protection and Unprotection (Note: For the following discussion, the term “sector” applies to both sectors and sector blocks. A sector block consists of two or more adjacent sectors that are protected or unprotected at the same time (see Tables 8 and 9). May 13, 2002 Am41PDS3224D 17 PRELIMINARY Table 9. Bottom Boot Sector/Sector Block Addresses for Protection/Unprotection Sector Group SGA0 SGA1 SGA2 SGA3 SGA4 SGA5 SGA6 SGA7 SGA8 SGA9 SGA10 SGA11 SGA12 SGA13 SGA14 SGA15 SGA16 SGA17 SGA18 SGA19 SGA20 SGA21 SGA22 SGA23 SGA24 Sectors SA70 SA69–SA67 SA66–SA63 SA62–SA59 SA58–SA55 SA54–SA51 SA50–SA47 SA46–SA43 SA42–SA39 SA38–SA35 SA34–SA31 SA30–SA27 SA26–SA23 SA22–SA19 SA18–SA15 SA14–SA11 SA10–SA8 SA7 SA6 SA5 SA4 SA3 SA2 SA1 SA0 A20–A12 111111XXX 11110XXXX 1110XXXXX 1101XXXXX 1100XXXXX 1011XXXXX 1010XXXXX 1001XXXXX 1000XXXXX 0111XXXXX 0110XXXXX 0101XXXXX 0100XXXXX 0011XXXXX 0010XXXXX 0001XXXXX 000011XXX 000000111 000000110 000000101 000000100 000000011 000000010 000000001 000000000 Sector/Sector Block Size 64 (1x64) Kbytes 192 (3x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 256 (4x64) Kbytes 192 (3x64) Kbytes 8 Kbytes 8 Kbytes 8 Kbytes 8 Kbytes 8 Kbytes 8 Kbytes 8 Kbytes 8 Kbytes It is possible to determine whether a sector is protected or unprotected. See the Autoselect Mode section for details. Write Protect (WP#) The Write Protect function provides a hardware method of protecting certain boot sectors without using V ID. This function is one of two provided by the WP#/ACC pin. If the system asserts V IL on the WP#/ACC pin, the device disables program and erase functions in the two “outermost” 8 Kbyte boot sectors independently of whether those sectors were protected or unprotected using the method described in “Sector/Sector Block Protection and Unprotection”. The two outermost 8 Kbyte boot sectors are the two sectors containing the lowest addresses in a top-boot-configured device, or the two sectors containing the highest addresses in a top-boot-configured device. If the system asserts VIH on the WP#/ACC pin, the device reverts to whether the two outermost 8 Kbyte boot sectors were last set to be protected or unprotected. That is, sector protection or unprotection for these two sectors depends on whether they were last protected or unprotected using the method described in “Sector/Sector Block Protection and Unprotection”. Note that the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result. The hardware sector protection feature disables both program and erase operations in any sector. The hardware sector unprotection feature re-enables both program and erase operations in previously protected sectors. Sector protection and unprotection requires VID on the RESET# pin only, and can be implemented either in-system or via programming equipment. Figure 2 shows the algorithms and Figure 26 shows the timing diagram. This method uses standard microprocessor bus cycle timing. For sector unprotect, all unprotected sectors must first be protected prior to the first sector unprotect write cycle. The device is shipped with all sectors unprotected. AMD offers the option of programming and protecting sectors at its factory prior to shipping the device through AMD’s ExpressFlash™ Service. Contact an AMD representative for details. Temporary Sector/Sector Block Unprotect (Note: For the following discussion, the term “sector” applies to both sectors and sector blocks. A sector block consists of two or more adjacent sectors that are protected or unprotected at the same time (see Table 8). This feature allows temporary unprotection of previously protected sectors to change data in-system. The Sector Unprotect mode is activated by setting the RESET# pin to V ID ( 9 V – 11 V). During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. Once VID is removed from the RESET# pin, all the previously protected sectors are protected again. Figure 1 shows the algorithm, and Figure 25 shows the timing diagrams, for this feature. 18 Am41PDS3224D May 13, 2002 PRELIMINARY START RESET# = VID (Note 1) Perform Erase or Program Operations RESET# = VIH Temporary Sector Unprotect Completed (Note 2) Notes: 1. All protected sectors unprotected (If WP#/ACC = VIL, outermost boot sectors will remain protected). 2. All previously protected sectors are protected once again. Figure 1. Temporary Sector Unprotect Operation May 13, 2002 Am41PDS3224D 19 PRELIMINARY START PLSCNT = 1 RESET# = VID Wait 1 µs Protect all sectors: The indicated portion of the sector protect algorithm must be performed for all unprotected sectors prior to issuing the first sector unprotect address START PLSCNT = 1 RESET# = VID Wait 1 µs Temporary Sector Unprotect Mode No First Write Cycle = 60h? Yes Set up sector address Sector Protect: Write 60h to sector address with A6 = 0, A1 = 1, A0 = 0 Wait 150 µs Verify Sector Protect: Write 40h to sector address with A6 = 0, A1 = 1, A0 = 0 Read from sector address with A6 = 0, A1 = 1, A0 = 0 No No First Write Cycle = 60h? Yes All sectors protected? Yes Set up first sector address Sector Unprotect: Write 60h to sector address with A6 = 1, A1 = 1, A0 = 0 Temporary Sector Unprotect Mode Increment PLSCNT Reset PLSCNT = 1 Wait 15 ms Verify Sector Unprotect: Write 40h to sector address with A6 = 1, A1 = 1, A0 = 0 No No PLSCNT = 25? Yes Data = 01h? Increment PLSCNT Yes No Yes No Read from sector address with A6 = 1, A1 = 1, A0 = 0 Set up next sector address Device failed Protect another sector? No Remove VID from RESET# PLSCNT = 1000? Yes Data = 00h? Yes Device failed Write reset command Last sector verified? Yes No Sector Protect Algorithm Sector Protect complete Sector Unprotect Algorithm Remove VID from RESET# Write reset command Sector Unprotect complete Note: The term “sector” in the figure applies to both sectors and sector blocks. Figure 2. In-System Sector/Sector Block Protect and Unprotect Algorithms 20 Am41PDS3224D May 13, 2002 PRELIMINARY SecSi (Secured Silicon) Sector Flash Memory Region The SecSi (Secured Silicon) Sector feature provides a Flash memory region that enables permanent part identification through an Electronic Serial Number (ESN). The SecSi Sector is 64 KBytes in length, and uses a SecSi Sector Indicator Bit (DQ7) to indicate whether or not the SecSi Sector is locked when shipped from the factory. This bit is permanently set at the factory and cannot be changed, which prevents cloning of a factory locked part. This ensures the security of the ESN once the product is shipped to the field. AMD offers the device with the SecSi Sector either f a cto ry lo cked o r cu sto m e r lo cka b le. Th e f a ctory-locked version is always protected when shipped from the factory, and has the SecSi (Secured Silicon) Sector Indicator Bit permanently set to a “1.” The customer-lockable version is shipped with the SecSi Sector unprotected, allowing customers to utilize that sector in any manner they choose. The customer-lockable version also has the SecSi Sector Indicator Bit permanently set to a “0.” Thus, the SecSi Sector Indicator Bit prevents customer-lockable devices from being used to replace devices that are factory locked. The system accesses the SecSi Sector through a command sequence (see “Enter SecSi Sector/Exit SecSi Sector Command Sequence”). After the system has written the Enter SecSi Sector command sequence, it may read the SecSi Sector by using the addresses normally occupied by the first sector (SA0). This mode of operation continues until the system issues the Exit SecSi Sector command sequence, or until power is removed from the device. On power-up, or following a hardware reset, the device reverts to sending commands to the boot sectors instead of the SecSi sector Factory Locked: SecSi Sector Programmed and Protected at the Factory In a factory locked device, the SecSi Sector is protected when the device is shipped from the factory. The SecSi Sector cannot be modified in any way. The device is available preprogrammed with one of the following: ■ A random, secure ESN only ■ Customer code through the ExpressFlash service ■ Both a random, secure ESN and customer code through the ExpressFlash service. In devices that have an ESN, a Bottom Boot device will have the 16-byte ESN in the lowest addressable memory area at addresses 000000h–000007h. In the Top Boot device the starting address of the ESN will be at the bottom of the lowest 8 Kbyte boot sector at addresses 1F8000h–1F8007h. Customers may opt to have their code programmed by AMD through the AMD ExpressFlash service. AMD programs the customer’s code, with or without the random ESN. The devices are then shipped from AMD’s factory with the permanently locked. Contact an AMD representative for details on using AMD’s ExpressFlash service. Customer Lockable: SecSi Sector NOT Programmed or Protected at the Factory If the security feature is not required, the SecSi Sector can be treated as an additional Flash memory space, expanding the size of the available Flash array by 64 Kbytes. The SecSi Sector can be read, programmed, and erased as often as required. The SecSi Sector area can be protected using one of the following procedures: ■ Write the three-cycle Enter SecSi Sector Region command sequence, and then follow the in-system sector protect algorithm as shown in Figure 2, except that RESET# may be at either VIH or VID. This allows in-system protection of the SecSi Sector without raising any device pin to a high voltage. Note that this method is only applicable to the SecSi Sector. ■ Write the three-cycle Enter SecSi Sector Region command sequence, and then use the alternate method of sector protection described in the “Sector/Sector Block Protection and Unprotection” section. Once the SecSi Sector is locked and verified, the syste m m u st w rit e t h e E xit S e cSi S e c to r R e g io n command sequence to return to reading and writing the remainder of the array. The SecSi Sector protection must be used with caution since, once protected, there is no procedure available for unprotecting the SecSi Sector area and none of the bits in the SecSi Sector memory space can be modified in any way. Hardware Data Protection The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to Table 10 for command definitions). In addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during V CC p ower-up and power-down transitions, or from system noise. Low VCC Write Inhibit When V CC is less than VLKO, the device does not accept any write cycles. This protects data during V CC power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets to reading array data. Subsequent writes are ignored until VCC is greater than VLKO. 21 May 13, 2002 Am41PDS3224D PRELIMINARY T he system must provide the proper signals to the control pins to prevent unintentional writes when VCC is greater than VLKO. Write Pulse “Glitch” Protection Noise pulses of less than 5 ns (typical) on OE#, CE#f or WE# do not initiate a write cycle. Logical Inhibit Write cycles are inhibited by holding any one of OE# = VIL, CE#f = VIH or WE# = VIH. To initiate a write cycle, CE#f and WE# must be a logical zero while OE# is a logical one. Power-Up Write Inhibit If WE# = CE#f = V IL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to reading array data on power-up. FLASH COMMAND DEFINITIONS Writing specific address and data commands or sequences into the command register initiates device operations. Table 10 defines the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence resets the device to reading array data. All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on the rising edge of WE# or CE#, whichever happens first. Refer to the AC Characteristics section for timing diagrams. Reset Command Writing the reset command resets the device to the read or erase-suspend-read mode. Address bits are don’t cares for this command. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the device to the read mode. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the device to the read mode. If the program command sequence is written while the device is in the Erase Suspend mode, writing the reset command returns the device to the erase-suspend-read mode. Once programming begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to the read mode. If the device entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns the device to the erase-suspend-read mode. If DQ5 goes high during a program or erase operation, writing the reset command returns the device to the read mode (or erase-suspend-read mode if the device was in Erase Suspend). Reading Array Data The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. The device is ready to read array data after completing an Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the device enters the erase-suspend-read mode, after which the system can read data from any non-erase-suspended sector. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See the Erase Suspend/Erase Resume Commands section for more information. The system must issue the reset command to return the device to the read (or erase-suspend-read) mode if DQ5 goes high during an active program or erase operation, or if the device is in the autoselect mode. See the next section, Reset Command, for more information. See also Requirements for Reading Array Data in the MCP Device Bus Operations section for more information. The Read-Only Operations table provides the read parameters, and Figure 15 shows the timing diagram. Autoselect Command Sequence The autoselect command sequence allows the host system to access the manufacturer and device codes, and determine whether or not a sector is protected. Table 10 shows the address and data requirements. The autoselect command sequence may be written to an address that is either in the read or erase-suspend-read mode. The autoselect command may not be written while the device is actively programming or erasing. 22 Am41PDS3224D May 13, 2002 PRELIMINARY The autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect command. The device then enters the autoselect mode, and the system may read any number of autoselect codes without reinitiating the command sequence. Table 10 shows the address and data requirements for the command sequence. To determine sector protection information, the system must write to the appropriate sector group address (SGA). Tables 4 and 6 show the address range associated with each sector. The system must write the reset command to return to the read mode (or erase-suspend-read mode if the device was previously in Erase Suspend). mine the status of the program operation by using DQ7, DQ6, or RY/BY#. Refer to the Flash Write Operation Status section for information on these status bits. Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the program operation. The program command sequence should be reinitiated once the device has returned to the read mode, to ensure data integrity. Programming is allowed in any sequence and across sector boundaries. A b it cannot be programmed from “0” back to a “1.” A ttempting to do so may cause the device to set DQ5 = 1, or cause the DQ7 and DQ6 status bits to indicate the operation was successful. However, a succeeding read will show that the data is still “0.” Only erase operations can convert a “0” to a “1.” Unlock Bypass Command Sequence The unlock bypass feature allows the system to program words to the device faster than using the standard program comma nd se quence. The unlock bypass command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. The device then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is required to program in this mode. The first cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the program address and data. Additional data is programmed in the same manner. This mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total programming time. Table 10 shows the requirements for the command sequence. During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the data 90h. The second cycle must contain the data 00h. The device then returns to reading array data. See Figure 3 for the unlock bypass algorithm. Enter SecSi Sector/Exit SecSi Sector Command Sequence The SecSi Sector region provides a secured data area containing an 16-byte random Electronic Serial Number (ESN). The system can access the SecSi Sector region by issuing the three-cycle Enter SecSi Sector command sequence. The device continues to access the SecSi Sector region until the system issues the four-cycle Exit SecSi Sector command sequence. The Exit SecSi Sector command sequence returns the device to normal operation. Table 10 shows the address and data requirements for both command sequences. See also “SecSi (Secured Silicon) Sector Flash Memory Region” for further information. Note that a hardware reset (RESET#=V IL ) will reset the device to reading array data. Word Program Command Sequence Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically provides internally generated program pulses and verifies the programmed cell margin. Table 10 shows the address and data requirements for the program command sequence. When the Embedded Program algorithm is complete, the device then returns to the read mode and addresses are no longer latched. The system can deter- May 13, 2002 Am41PDS3224D 23 PRELIMINARY Figure 4 illustrates the algorithm for the program operation. Refer to the Flash Erase and Program Operations table in the AC Characteristics section for parameters, and Figure 18 for timing diagrams. Set Unlock Bypass Mode Start 555h/AAh 2AAh/55h START 555h/20h XXXh/A0h Write Program Command Sequence Program Address/Program Data Data# Polling Device Embedded Program algorithm in progress No In Unlock Bypass Program Data Poll from System Verify Data? Verify Byte? Yes Increment Address No No Yes No Last Address ? Yes Increment Address Last Address? Yes Programming Completed Programming Completed (BA) XXXh/90h Reset Unlock Bypass Mode Note: See Table 10 for program command sequence. XXXh/00h Figure 4. Program Operation Figure 3. Unlock Bypass Algorithm Chip Erase Command Sequence Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. Table 10 shows the address and data requirements for the chip erase command sequence. The device offers accelerated program operations through the WP#/ACC pin. When the system asserts VHH on the WP#/ACC pin, the device automatically enters the Unlock Bypass mode. The system may then write the two-cycle Unlock Bypass program command sequence. The device uses the higher voltage on the WP#/ACC pin to accelerate the operation. Note that the WP#/ACC pin must not be at VHH a ny operation other than accelerated programming, or device damage may result. In addition, the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result. 24 Am41PDS3224D May 13, 2002 PRELIMINARY When the Embedded Erase algorithm is complete, the device returns to the read mode and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. Refer to the Flash Write Operation Status section for information on these status bits. Any commands written during the chip erase operation are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the chip erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. Figure 5 illustrates the algorithm for the erase operation. Refer to the Flash Erase and Program Operations tables in the AC Characteristics section for parameters, and Figure 20 section for timing diagrams. ing edge of the final WE# pulse in the command sequence. When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. Note that while the Embedded Erase operation is in progress, the system can read data from the non-erasing sector. The system can determine the status of the erase operation by reading DQ7, DQ6, DQ2, or RY/BY# in the erasing sector. Refer to the Flash Write Operation Status section for information on these status bits. Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. However, note that a hardware reset i mmediately terminates the erase operation. If that occurs, the sector erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. Figure 5 illustrates the algorithm for the erase operation. Refer to the Flash Erase and Program Operations tables in the AC Characteristics section for parameters, and Figure 20 section for timing diagrams. Sector Erase Command Sequence Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and the sector erase command. Table 10 shows the address and data requirements for the sector erase command sequence. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. After the command sequence is written, a sector erase time-out of 50 µs occurs. During the time-out period, additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles must be less than 50 µs, otherwise erasure may begin. Any sector erase ad dress and comma nd following the excee ded time-out may or may not be accepted. It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is written. Any command other than S ec t or E r a s e or E r a s e S u s pe n d du r i ng th e time-out period resets the device to the read mode. T he system must rewrite the command sequence and any additional addresses and commands. The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section on DQ3: Sector Erase Timer.). The time-out begins from the ris- Erase Suspend/Erase Resume Commands The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. This command is valid only during the sector erase operation, including the 50 µs time-out period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. When the Erase Suspend command is written during the sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. After the erase operation has been suspended, the device enters the erase-suspend-read mode. The system can read data from or program data to any sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Note that unlock bypass programming is not allowed when the device is erase-suspended. Reading at any address within erase-suspended sectors produces status information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to de t e rm in e if a se ct o r is a ct ive ly e ra si ng o r is May 13, 2002 Am41PDS3224D 25 PRELIMINARY erase-suspended. Refer to the Flash Write Operation Status section for information on these status bits. After an erase-suspended program operation is complete, the device returns to the erase-suspend-read mode. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard word program operation. Refer to the Flash Write Operation Status section for more information. In the erase-suspend-read mode, the system can also issue the autoselect command sequence. Refer to the Autoselect Mode and Autoselect Command Sequence sections for details. To resume the sector erase operation, the system must write the Erase Resume command. The address of the erase-suspended sector is required when writing this command. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the chip has resumed erasing. START Write Erase Command Sequence (Notes 1, 2) Data Poll to Erasing Bank from System Embedded Erase algorithm in progress No Data = FFh? Yes Erasure Completed Notes: 1. See Table 10 for erase command sequence. 2. See the section on DQ3 for information on the sector erase timer. Figure 5. Erase Operation 26 Am41PDS3224D May 13, 2002 PRELIMINARY Table 10. Command Sequence (Note 1) Read (Note 6) Reset (Note 7) Autoselect (Note 8) Manufacturer ID Device ID (Note 9) SecSi Sector Factory Protect (Note 10) Sector Group Protect Verify (Note 11) Cycles First Addr RA XXX 555 555 555 555 555 555 555 555 XXX XXX 555 555 BA BA Data RD F0 AA AA AA AA AA AA AA AA A0 90 AA AA B0 30 PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first. SGA = Address of the sector group to be verified (in autoselect mode) or erased. Address bits A20–A12 uniquely select any sector. 2AA 2AA 2AA 2AA 2AA 2AA 2AA 2AA PA XXX 2AA 2AA 55 55 55 55 55 55 55 55 PD 00 55 55 555 555 80 80 555 555 AA AA 2AA 2AA 55 55 555 SA 10 30 555 555 555 555 555 555 555 555 90 90 90 90 88 90 A0 20 XXX PA 00 PD X00 X01 X03 (SGA) X02 0001 227E 80/00 XX00/ XX01 X0E 2206 X0F 2201/ 2200 Am29PDS322D Command Definitions Bus Cycles (Notes 2–5) Second Addr Data Third Addr Data Fourth Addr Data Fifth Addr Data Sixth Addr Data 1 1 4 4 4 4 3 4 4 Enter SecSi Sector Region Exit SecSi Sector Region Program Unlock Bypass 3 Unlock Bypass Program (Note 12) 2 Unlock Bypass Reset (Note 13) 2 Chip Erase Sector Erase Erase Suspend (Note 14) Erase Resume (Note 15) 6 6 1 1 Legend: X = Don’t care RA = Address of the memory location to be read. RD = Data read from location RA during read operation. PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later. Notes: 1. See Table 1 for description of bus operations. 9. 2. All values are in hexadecimal. 3. Except for the read cycle and the fourth and fifth cycle of the autoselect command sequence, all bus cycles are write cycles. 4. Data bits DQ15–DQ8 are don’t care in command sequences, except for RD and PD. 5. Unless otherwise noted, address bits A20–A12 are don’t cares in unlock sequence. 6. No unlock or command cycles required when device is in read mode. 7. The Reset command is required to return to the read mode (or to the erase-suspend-read mode if previously in Erase Suspend) when the device is in the autoselect mode, or if DQ5 goes high (while the device is providing status information). 8. The fourth cycle of the autoselect command sequence is a read cycle. The system must provide the bank address to obtain the manufacturer ID, device ID, or SecSi Sector factory protect information. Data bits DQ15–DQ8 are don’t care. See the Autoselect Command Sequence section for more information. The device ID must be read across the fourth, fifth and sixth cycles. The sixth cycle specifies 2201h for top boot or 2200h for bottom boot. 10. The data is 80h for factory locked and 00h for not factory locked. 11. The data is 00h for an unprotected sector group and 01h for a protected sector group. 12. The Unlock Bypass command is required prior to the Unlock Bypass Program command. 13. The Unlock Bypass Reset command is required to return to the read mode when the device is in the unlock bypass mode. 14. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is valid only during a sector erase 15. The Erase Resume command is valid only during the Erase Suspend mode, and requires the bank address. May 13, 2002 Am41PDS3224D 27 PRELIMINARY FLASH WRITE OPERATION STATUS The device provides several bits to determine the status of a program or erase operation: DQ2, DQ3, DQ5, DQ6, and DQ7. Table 11 and the following subsections describe the function of these bits. DQ7 and DQ6 each offer a method for determining whether a program or erase operation is complete or in progress. The device also provides a hardware-based output signal, RY/BY#, to determine whether an Embedded Program or Erase operation is in progress or has been completed. pleted the program or erase operation and DQ7 has valid data, the data outputs on DQ6–DQ0 may be still invalid. Valid data on DQ7–DQ0 will appear on successive read cycles. Table 11 shows the outputs for Data# Polling on DQ7. Figure 6 shows the Data# Polling algorithm. Figure 22 in the Flash AC Characteristics section shows the Data# Polling timing diagram. DQ7: Data# Polling The Data# Polling bit, DQ7, indicates to the host syst e m wh e t h er an E m b e d d e d P r o gr am o r E ra se algorithm is in progress or completed, or whether a bank is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the command sequence. During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then that bank returns to reading array data. During the Embedded Erase algorithm, Data# Polling produces a “0” on DQ7. When the Embedded Erase algorithm is complete, or if the bank enters the Erase Suspend mode, Data# Polling produces a “1” on DQ7. The system must provide an address within any of the sectors selected for erasure to read valid status information on DQ7. After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 µs, then the bank returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected sector, the status may not be valid. Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously with DQ0–DQ6 while Output Enable (OE#) is asserted low. That is, the device may change from providing status information to valid data on DQ7. Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has comSTART Read DQ7–DQ0 Addr = VA DQ7 = Data? Yes No No DQ5 = 1? Yes Read DQ7–DQ0 Addr = VA DQ7 = Data? Yes No FAIL PASS Notes: 1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being erased. During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Figure 6. Data# Polling Algorithm 28 Am41PDS3224D May 13, 2002 PRELIMINARY RY/BY#: Ready/Busy# The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a pull-up resistor to VCC. If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is high (Ready), the device is in the read mode, the standby mode, or the device is in the erase-suspend-read mode. Table 11 shows the outputs for RY/BY#. Table 11 shows the outputs for Toggle Bit I on DQ6. Figure 7 shows the toggle bit algorithm. Figure 23 in the “Measurements performed by placing a 50Ω termination on the data pin with a bias of V CC /2. The time from OE# high to the data bus driven to VCC/2 is taken as tDFAC Characteristics.” section shows the toggle bit timing diagrams. Figure 24 shows the differences between DQ2 and DQ6 in graphical form. See also the subsection on DQ2: Toggle Bit II. START Read DQ7–DQ0 DQ6: Toggle Bit I Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause DQ6 to toggle. The system may use either OE# or CE# to control the read cycles. When the operation is complete, DQ6 stops toggling. After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 100 µs, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase-suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 (see the subsection on DQ7: Data# Polling). If a program address falls within a protected sector, DQ6 toggles for approximately 1 µs after the program command sequence is written, then returns to reading array data. DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete. Read DQ7–DQ0 Toggle Bit = Toggle? Yes No No DQ5 = 1? Yes Read DQ7–DQ0 Twice Toggle Bit = Toggle? No Yes Program/Erase Operation Not Complete, Write Reset Command Program/Erase Operation Complete Note: T he system should recheck the toggle bit even if DQ5 = “1” because the toggle bit may stop toggling as DQ5 changes to “1.” See the subsections on DQ6 and DQ2 for more information. Figure 7. Toggle Bit Algorithm May 13, 2002 Am41PDS3224D 29 PRELIMINARY DQ2: Toggle Bit II The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 11 to compare outputs for DQ2 and DQ6. Figure 7 shows the toggle bit algorithm in flowchart form, and the section “DQ2: Toggle Bit II” explains the algorithm. See also the DQ6: Toggle Bit I subsection. Figure 23 shows the toggle bit timing diagram. Figure 24 shows the differences between DQ2 and DQ6 in graphical form. the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 7). DQ5: Exceeded Timing Limits DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a “1,” indicating that the program or erase cycle was not successfully completed. The device may output a “1” on DQ5 if the system tries to program a “1” to a location that was previously programmed to “0.” O nly an erase operation can change a “0” back to a “1.” Under this condition, the device halts the operation, and when the timing limit has been exceeded, DQ5 produces a “1.” Under both these conditions, the system must write the reset command to return to the read mode (or to the erase-suspend-read mode if the device was previously in the erase-suspend-program mode). DQ3: Sector Erase Timer After writing a sector erase command sequence, the system may read DQ3 to determine whether or not erasure has begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase command. When the time-out period is complete, DQ3 switches from a “0” to a “1.” If the time between additional sector erase commands from the system can be assumed to be less than 50 µs, the system need not monitor DQ3. See also the Sector Erase Command Sequence section. After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure that the device has accepted the command sequence, and then read DQ3. If DQ3 is “1,” the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored until the erase operation is complete. If DQ3 is “0,” the device will accept additional sector erase commands. To ensure the command has been accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last command might not have been accepted. Table 11 shows the status of DQ3 relative to the other status bits. Reading Toggle Bits DQ6/DQ2 Refer to Figure 7 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on DQ7–DQ0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not completed the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor 30 Am41PDS3224D May 13, 2002 PRELIMINARY Table 11. Status Embedded Program Algorithm Embedded Erase Algorithm Erase Erase-Suspend- Suspended Sector Read Non-Erase Suspended Sector Erase-Suspend-Program Write Operation Status DQ7 (Note 2) DQ7# 0 1 Data DQ7# DQ6 Toggle Toggle No toggle Data Toggle DQ5 (Note 1) 0 0 0 Data 0 DQ3 N/A 1 N/A Data N/A DQ2 (Note 2) No toggle Toggle Toggle Data N/A RY/BY# 0 0 1 1 0 Standard Mode Erase Suspend Mode Notes: 1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. Refer to the section on DQ5 for more information. 2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details. May 13, 2002 Am41PDS3224D 31 PRELIMINARY ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . –55°C to +125°C Ambient Temperature with Power Applied . . . . . . . . . . . . . . –40°C to +85°C Voltage with Respect to Ground VCCf/VCCs (Note 1) . . . . . . . . . . . . –0.3 V to +2.5 V RESET# (Note 2) . . . . . . . . . . . . . –0.5 V to +11 V WP#/ACC . . . . . . . . . . . . . . . . . .–0.5 V to +10.5 V All other pins (Note 1) . . . . . . –0.5 V to VCC +0.5 V Output Short Circuit Current (Note 3) . . . . . . 100 mA Notes: 1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, input or I/O p in s may overshoot V SS t o –2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCC +0.5 V. See Figure 8. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 9. 2. Minimum DC input voltage on pins OE#, RESET#, and WP#/ACC is –0.5 V. During voltage transitions, OE#, WP#/ACC, and RESET# may overshoot VSS t o –2.0 V for periods of up to 20 ns. See Figure 8. Maximum DC input voltage on pin RESET# is +12.5 V which may overshoot to +14.0 V for periods up to 20 ns. Maximum DC input voltage on WP#/ACC is +9.5 V which may overshoot to +12.0 V for periods up to 20 ns. 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of t he device to absolut e maximum rat ing conditions for extended periods may affect device reliability. OPERATING RANGES Industrial (I) Devices Ambient Temperature (TA) . . . . . . . . .–40°C to +85°C VCCf/VCCs Supply Voltage VCCf/VCCs for standard voltage range . . 1.8 V to 2.2 V Operating ranges define those limits between which the functionality of the device is guaranteed. 20 ns +0.8 V –0.5 V –2.0 V 20 ns VCC +2.0 V VCC +0.5 V 2.0 V 20 ns 20 ns 20 ns 20 ns Figure 8. Maximum Negative Overshoot Waveform Figure 9. Maximum Positive Overshoot Waveform 32 Am41PDS3224D May 13, 2002 PRELIMINARY FLASH DC CHARACTERISTICS CMOS Compatible Parameter Symbol ILI ILIT ILO ILIA ICC1f ICC2f ICC3f ICC4f Parameter Description Input Load Current RESET# Input Load Current Output Leakage Current ACC Input Leakage Current Flash VCC Active Inter-Page Read Current (Notes 1, 2) Test Conditions VIN = VSS to VCC, VCC = VCC max VCC = VCC max; RESET# = 12.5 V VOUT = VSS to VCC, VCC = VCC max VCC = VCC max, WP#/ACC = VACC max CE#f = VIL, OE# = VIH, 1 MHz 10 MHz 2.5 24 15 0.2 0.1 Min Typ Max ±1.0 35 ±1.0 35 3 28 30 5 5 Unit µA µA µA µA mA mA µA µA Flash VCC Active Write Current (Notes 2, 3) CE#f = VIL, OE# = VIH Flash VCC Standby Current (Note 2) Flash VCC Reset Current (Note 2) Flash VCC Automatic Sleep Mode Current (Notes 2, 4) Flash VCC Active Read-While-Program Current (Notes 1, 2, 5) VCC f = VCC max, CE#f, RESET# = VCC ± 0.3 V VCC f = VCC max, WP#/ACC = VCCf ± 0.3 V, RESET# = VSS ± 0.3 V VCC f = VCC max, CE#f = VSS ± 0.3 V; RESET# = VCC ± 0.3 V, VIN = VCC ± 0.3 V or VSS ± 0.3 V CE#f = VIL, OE# = VIH ICC5f 0.2 5 µA ICC6f ICC7f 30 30 55 55 mA mA Flash VCC Active Read-While-Erase Current CE#f = VIL, OE# = VIH (Notes 1, 2, 5) Flash VCC Active Program-While-Erase-Suspended Current (Note 2) Flash VCC Active Intra-Page Read Current WP#/ACC Accelerated Program Current Input Low Voltage Input High Voltage Voltage for WP#/ACC Program Acceleration and Sector Protection/Unprotection Voltage for Sector Protection, Autoselect and Temporary Sector Unprotect Output Low Voltage Output High Voltage Flash Low VCC Lock-Out Voltage (Note 5) IOL = 4.0 mA, VCCf = VCCs = VCC min IOH = –2.0 mA, VCC f = VCCs = VCC min IOH = –100 µA, VCC = VCC min 0.85 x VCC VCC–0.1 1.2 CE#f = VIL, OE# = VIH 10 MHz 20 MHz ICC8f 17 0.5 1 12 –0.5 0.8 x VCC 8.5 9 35 1 2 20 0.2 x VCC VCC + 0.3 9.5 11 0.1 mA ICC9f IACC VIL VIH VACC/VHH VID VOL VOH1 VOH2 VLKO CE#f = VIL, OE# = VIH mA mA V V V V V V VCC = VCCMax, WP#/ACC = VACCMax 1.5 V Notes: 1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. 2. 3. 4. 5. Maximum ICC specifications are tested with VCC = VCC max. ICC active while Embedded Erase or Embedded Program is in progress. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is 200 nA. Not 100% tested. May 13, 2002 Am41PDS3224D 33 PRELIMINARY SRAM DC AND OPERATING CHARACTERISTICS Parameter Symbol ILI ILO ICC Parameter Description Input Leakage Current Output Leakage Current Operating Power Supply Current Test Conditions VIN = VSS to VCC CE1#s = VIH, CE2s = VIL or OE# = VIH or WE# = V IL, VIO= VSS to VCC IIO = 0 mA, CE1#s = V IL, CE2s = WE# = VIH, V IN = V IH or V IL Cycle time = 1 µs, 100% duty, IIO = 0 mA, CE1#s ≤ 0.2 V, CE2 ≥ V CC – 0.2 V, VIN ≤ 0.2 V or VIN ≥ VCC – 0.2 V Cycle time = Min., IIO = 0 mA, 100% duty, CE1#s = VIL, CE2s = VIH, VIN = VIL = or VIH IOL = 2.1 mA IOH = –0.1 mA CE1#s ≥ VCC – 0.2 V, CE2 ≥ VCC – 0.2 V (CE1#s controlled) or CE2 ≤ 0.2 V (CE2s controlled), CIOs = VSS or VCC, Other input = 0 ~ VCC 1.4 Min –1.0 –1.0 Typ Max 1.0 1.0 2 Unit µA µA mA ICC1s Average Operating Current 2 mA ICC2s VOL VOH Average Operating Current Output Low Voltage Output High Voltage 17 0.2 mA V V ISB1 Standby Current (CMOS) 0.5 8 µA Note: Typical values measured at VCC = 2.0 V, TA = 25°C. Not 100% tested. 34 Am41PDS3224D May 13, 2002 PRELIMINARY FLASH DC CHARACTERISTICS Zero-Power Flash 25 Supply Current in mA 20 15 10 5 0 0 500 1000 1500 2000 Time in ns 2500 3000 3500 4000 Note: Addresses are switching at 1 MHz Figure 10. ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents) 18 2.0 V 15 12 Supply Current in mA 9 6 3 0 1 Note: T = 25 °C 2 3 4 5 6 7 8 Frequency in MHz Figure 11. Typical ICC1 vs. Frequency May 13, 2002 Am41PDS3224D 35 PRELIMINARY TEST CONDITIONS Table 12. 3.3 V 2.7 kΩ Test Specifications 100, 110 ns Unit Test Condition Output Load Output Load Capacitance, CL (including jig capacitance) 1 TTL gate 30 5 2.0 1.0 1.0 pF ns V V V Device Under Test CL 6.2 kΩ Input Rise and Fall Times Input Pulse Levels Input timing measurement reference levels Note: Diodes are IN3064 or equivalent Output timing measurement reference levels Figure 12. Test Setup KEY TO SWITCHING WAVEFORMS WAVEFORM INPUTS Steady Changing from H to L Changing from L to H Don’t Care, Any Change Permitted Does Not Apply Changing, State Unknown Center Line is High Impedance State (High Z) OUTPUTS 2.0 V 0.0 V Input 1.0 V Measurement Level 1.0 V Output Figure 13. Input Waveforms and Measurement Levels 36 Am41PDS3224D May 13, 2002 PRELIMINARY AC CHARACTERISTICS SRAM CE#s Timing Parameter Test Setup JEDEC — Std tCCR Description CE#s Recover Time — Min 0 ns All Speeds Unit CE#f tCCR CE1#s tCCR tCCR CE2s tCCR Figure 14. Timing Diagram for Alternating Between SRAM to Flash May 13, 2002 Am41PDS3224D 37 PRELIMINARY FLASH AC CHARACTERISTICS Read-Only Operations Parameter JEDEC tAVAV tAVQV Std tRC tACC tPRC tPACC tELQV tGLQV tEHQZ tGHQZ tAXQX tCE tOE tDF tDF tOH Description Read Cycle Time (Note 1) Address to Output Delay Page Read Cycle Page Address to Output Delay Chip Enable to Output Delay Output Enable to Output Delay Chip Enable to Output High Z (Notes 1, 3) Output Enable to Output High Z (Notes 1, 3) Output Hold Time From Addresses, CE# or OE#, Whichever Occurs First Read tOEH Output Enable Hold Time (Note 1) Toggle and Data# Polling CE#, OE# = VIL OE# = VIL CE#, OE# = VIL Test Setup Min Max Min Max Max Max Max Max Min Min Min Speed Option 10 100 100 40 40 100 35 16 16 0 0 10 11 110 110 45 45 110 45 Unit ns ns ns ns ns ns ns ns ns ns ns Notes: 1. Not 100% tested. 2. See Figure 12 and Table 12 for test specifications. 3. Measurements performed by placing a 50Ω termination on the data pin with a bias of VCC /2. The time from OE# high to the data bus driven to VCC/2 is taken as tDF AC Characteristics. tRC Addresses CE#f tRH tRH OE# tOEH WE# HIGH Z Outputs RESET# RY/BY# Output Valid tCE tOH HIGH Z tOE tDF Addresses Stable tACC 0V Figure 15. Conventional Read Operation Timings 38 Am41PDS3224D May 13, 2002 PRELIMINARY FLASH AC CHARACTERISTICS A20 to A2 Same page Addresses A1 to A0 Aa tRC tACC Ab tPRC Ac tPRC Ad CE# tCE tOE tOEH tPACC tOH High-Z tPACC tOH Db tPACC tOH Dc tOH Dd tDF OE# WE# Output Da Figure 16. Page Mode Read Timings May 13, 2002 Am41PDS3224D 39 PRELIMINARY FLASH AC CHARACTERISTICS Hardware Reset (RESET#) Parameter Description JEDEC Std tReady tReady tRP tRH tRPD tRB RESET# Pin Low (During Embedded Algorithms) to Read Mode (See Note) RESET# Pin Low (NOT During Embedded Algorithms) to Read Mode (See Note) RESET# Pulse Width Reset High Time Before Read (See Note) RESET# Low to Standby Mode RY/BY# Recovery Time Max Max Min Min Min Min 20 500 500 200 20 0 µs ns ns ns µs ns All Speeds Unit Note: Not 100% tested. RY/BY# CE#f, OE# tRH RESET# tRP tReady Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms tReady RY/BY# tRB CE#f, OE# RESET# tRP Figure 17. Reset Timings 40 Am41PDS3224D May 13, 2002 PRELIMINARY FLASH AC CHARACTERISTICS Flash Erase and Program Operations Parameter JEDEC tAVAV tAVWL Std tWC tAS tASO tWLAX tAH tAHT tDVWH tWHDX tDS tDH tOEH tOEPH tGHEL tGHWL tWLEL tELWL tEHWH tWHEH tWLWH tELEH tWHDL tGHEL tGHWL tWS tCS tWH tCH tWP tCP tWPH tSR/W tWHWH1 tWHWH1 tWHWH2 tWHWH1 tWHWH1 tWHWH2 tVCS tRB tBUSY Notes: 1. Not 100% tested. 2. See the “Flash Erase And Programming Performance” section for more information. Description Write Cycle Time (Note 1) Address Setup Time (WE# to Address) Address Setup Time to OE# or CE#f Low During Toggle Bit Polling Address Hold Time (WE# to Address) Address Hold Time From CE#f or OE# High During Toggle Bit Polling Data Setup Time Data Hold Time Read OE# Hold Time Toggle and Data# Polling Output Enable High During Toggle Bit Polling Read Recovery Time Before Write (OE# High to CE#f Low) Read Recovery Time Before Write (OE# High to WE# Low) WE# Setup Time (CE#f to WE#) CE#f Setup Time (WE# to CE#f) WE# Hold Time (CE#f to WE#) CE#f Hold Time (CE#f to WE#) Write Pulse Width CE#f Pulse Width Write Pulse Width High Latency Between Read and Write Operations Programming Operation (Note 2) Accelerated Programming Operation, Word or Byte (Note 2) Sector Erase Operation (Note 2) VCCf Setup Time (Note 1) Write Recovery Time From RY/BY# Program/Erase Valid To RY/BY# Delay Min Min Min Min Min Min Min Min Min Min Min Min Typ Typ Typ Min Min Max 20 20 0 0 0 0 0 0 60 60 60 0 11 5 1 50 0 90 ns ns ns ns ns ns ns ns ns ns ns ns µs µs sec µs ns ns Min Min Min Min Min Min Min Min Speed Options Unit 10 100 0 15 60 0 60 0 0 11 110 ns ns ns ns ns ns ns ns May 13, 2002 Am41PDS3224D 41 PRELIMINARY FLASH AC CHARACTERISTICS Program Command Sequence (last two cycles) tWC Addresses 555h tAS PA tAH CE#f tGHWL OE# tWP WE# tCS tDS Data tDH PD tBUSY RY/BY# Status DOUT tRB tWPH tWHWH1 PA PA Read Status Data (last two cycles) tCH A0h VCCf tVCS Notes: 1. PA = program address, PD = program data, DOUT is the true data at the program address. Figure 18. Program Operation Timings VHH WP#/ACC VIL or VIH tVHH tVHH VIL or VIH Figure 19. Accelerated Program Timing Diagram 42 Am41PDS3224D May 13, 2002 PRELIMINARY FLASH AC CHARACTERISTICS Erase Command Sequence (last two cycles) tWC Addresses 2AAh tAS SADD 555h for chip erase Read Status Data VA tAH VA CE#f tGHWL OE# tWP WE# tCS tDS tDH Data 55h 30h 10 for Chip Erase In Progress Complete tCH tWPH tWHWH2 tBUSY RY/BY# tVCS VCCf tRB Notes: 1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Flash Write Operation Status”). Figure 20. Chip/Sector Erase Operation Timings May 13, 2002 Am41PDS3224D 43 PRELIMINARY FLASH AC CHARACTERISTICS tWC Addresses Valid PA tRC Valid RA tWC Valid PA tWC Valid PA tAH tACC CE#f tCPH tCE tOE tCP OE# tOEH tWP WE# tWPH tDS tDH Data Valid In tGHWL tDF tOH Valid Out Valid In Valid In tSR/W WE# Controlled Write Cycle Read Cycle CE#f Controlled Write Cycles Figure 21. Back-to-back Read/Write Cycle Timings tRC Addresses VA tACC tCE CE#f tCH OE# tOEH WE# tOH DQ7 High Z VA VA tOE tDF Complement Complement True Valid Data High Z DQ6–DQ0 tBUSY RY/BY# Status Data Status Data True Valid Data Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle. Figure 22. Data# Polling Timings (During Embedded Algorithms) 44 Am41PDS3224D May 13, 2002 PRELIMINARY FLASH AC CHARACTERISTICS tAHT Addresses tAHT tASO CE#f tOEH WE# tOEPH OE# tDH DQ6/DQ2 Valid Data Valid Status tAS tCEPH tOE Valid Status Valid Status Valid Data (first read) RY/BY# (second read) (stops toggling) Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle Figure 23. Toggle Bit Timings (During Embedded Algorithms) Enter Embedded Erasing WE# Erase Suspend Erase Enter Erase Suspend Program Erase Suspend Program Erase Resume Erase Suspend Read Erase Erase Complete Erase Suspend Read DQ6 DQ2 Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE#f to toggle DQ2 and DQ6. Figure 24. DQ2 vs. DQ6 May 13, 2002 Am41PDS3224D 45 PRELIMINARY FLASH AC CHARACTERISTICS Temporary Sector/Sector Block Unprotect Parameter All Speed Options JEDEC Std tVIDR tVHH tRSP tRRB Description V ID Rise and Fall Time (See Note) VHH Rise and Fall Time (See Note) RESET# Setup Time for Temporary Sector/Sector Block Unprotect RESET# Hold Time from RY/BY# High for Temporary Sector/Sector Block Unprotect Min Min Min Min 500 500 4 4 ns ns µs µs Unit Note: Not 100% tested. VID RESET# VSS, VIL, or VIH tVIDR Program or Erase Command Sequence CE#f tVIDR VID VSS, VIL, or VIH WE# tRSP RY/BY# tRRB Figure 25. Temporary Sector/Sector Block Unprotect Timing Diagram 46 Am41PDS3224D May 13, 2002 PRELIMINARY FLASH AC CHARACTERISTICS VID VIH RESET# SADD, A6, A1, A0 Valid* Sector/Sector Block Protect or Unprotect Valid* Verify 40h Sector/Sector Block Protect: 150 µs, Sector/Sector Block Unprotect: 15 ms Valid* Data 60h 60h Status 1 µs CE#f WE# OE# * For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0. Figure 26. Sector/Sector Block Protect and Unprotect Timing Diagram May 13, 2002 Am41PDS3224D 47 PRELIMINARY FLASH AC CHARACTERISTICS Alternate CE#f Controlled Erase and Program Operations Parameter JEDEC tAVAV tAVWL Std tWC tAS tASO tELAX tAH tAHT tDVEH tEHDX tGHEL tWLEL tEHWH tELEH tEHEL tWHWH1 tWHWH1 tWHWH2 tDS tDH tGHEL tWS tWH tCP tCPH tWHWH1 tWHWH1 tWHWH2 Description Write Cycle Time (Note 1) Address Setup Time (WE# to Address) Address Setup Time to CE#f Low During Toggle Bit Polling Address Hold Time Address Hold time from CE#f or OE# High During Toggle Bit Polling Data Setup Time Data Hold Time Read Recovery Time Before Write (OE# High to WE# Low) WE# Setup Time WE# Hold Time CE#f Pulse Width CE#f Pulse Width High Programming Operation (Note 2) Accelerated Programming Operation, Word or Byte (Note 2) Sector Erase Operation (Note 2) Min Min Min Min Min Min Min Min Min Min Min Min Typ Typ Typ Speed Options Unit 10 100 0 15 60 0 60 0 0 0 0 60 60 16 5 1 11 110 ns ns ns ns ns ns ns ns ns ns ns ns µs µs sec Notes: 1. Not 100% tested. 2. See the “Flash Erase And Programming Performance” section for more information. 48 Am41PDS3224D May 13, 2002 PRELIMINARY FLASH AC CHARACTERISTICS 555 for program 2AA for erase PA for program SADD for sector erase 555 for chip erase Data# Polling PA Addresses tWC tWH WE# tGHEL OE# tCP CE#f tWS tCPH tDS tDH Data tRH A0 for program 55 for erase PD for program 30 for sector erase 10 for chip erase tAS tAH tWHWH1 or 2 tBUSY DQ7# DOUT RESET# RY/BY# Notes: 1. Figure indicates last two bus cycles of a program or erase operation. 2. PA = program address, SA = sector address, PD = program data. 3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device. Figure 27. Flash Alternate CE#f Controlled Write (Erase/Program) Operation Timings May 13, 2002 Am41PDS3224D 49 PRELIMINARY SRAM AC CHARACTERISTICS Read Cycle Parameter Symbol tRC tAA tCO1, tCO2 tOE tBA tLZ1, tLZ2 tBLZ tOLZ tHZ1, tHZ2 tBHZ tOHZ tOH Description Read Cycle Time Address Access Time Chip Enable to Output Output Enable Access Time LB#s, UB#s to Access Time Chip Enable (CE1#s Low and CE2s High) to Low-Z Output UB#, LB# Enable to Low-Z Output Output Enable to Low-Z Output Chip Disable to High-Z Output UB#s, LB#s Disable to High-Z Output Output Disable to High-Z Output Output Data Hold from Address Change Min Max Max Max Max Min Min Min Max Max Max Min 10, 11 70 70 70 35 70 10 10 5 25 25 25 10 Unit ns ns ns ns ns ns ns ns ns ns ns ns tRC Address tOH Data Out Previous Data Valid tAA Data Valid Note: CE1#s = OE# = VIL, CE2s = WE# = VIH, UB#s and/or LB#s = VIL Figure 28. SRAM Read Cycle—Address Controlled 50 Am41PDS3224D May 13, 2002 PRELIMINARY SRAM AC CHARACTERISTICS tRC Address tAA tCO1 tOH CS#1 CS2 tCO2 tBA tHZ UB#, LB# OE# tLZ tOLZ tBLZ tOE tBHZ tOHZ Data Valid Data Out High-Z Figure 29. Notes: 1. WE# = VIH, if CIOs is low, ignore UB#s/LB#s timing. SRAM Read Cycle 2. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 3. At any given temperature and voltage condition, tHZ (Max.) is less than tLZ (Min.) both for a given device and from device to device interconnection. May 13, 2002 Am41PDS3224D 51 PRELIMINARY SRAM AC CHARACTERISTICS Write Cycle Parameter Symbol tWC tCw tAS tAW tBW tWP tWR tWHZ tDW tDH tOW Description Write Cycle Time Chip Enable to End of Write Address Setup Time Address Valid to End of Write UB#s, LB#s to End of Write Write Pulse Time Write Recovery Time Write to Output High-Z Max Data to Write Time Overlap Data Hold from Write Time End Write to Output Low-Z Min Min min 20 30 0 5 ns ns ns Min Min Min Min Min Min Min Min 10, 11 70 60 0 60 60 50 0 0 ns Unit ns ns ns ns ns ns ns tWC Address tCW (See Note 2) tAW CS2s UB#s, LB#s tCW (See Note 2) tBW tWP (See Note 5) tAS (See Note 4) High-Z tWHZ Data Out Data Undefined tDW Data Valid tWR (See Note 3) CS1#s WE# tDH High-Z tOW Data In Notes: 1. WE# controlled, if CIOs is low, ignore UB#s and LB#s timing. 2. tCW is measured from CE1#s going low to the end of write. 3. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high. 4. tAS is measured from the address valid to the beginning of write. 5. A write occurs during the overlap (tWP) of low CE#1 and low WE#. A write begins when CE1#s goes low and WE# goes low when asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A write ends at the earliest transition when CE1#s goes high and WE# goes high. The tWP is measured from the beginning of write to the end of write. Figure 30. SRAM Write Cycle—WE# Control 52 Am41PDS3224D May 13, 2002 PRELIMINARY SRAM AC CHARACTERISTICS tWC Address tAS (See Note 2 ) tCW (See Note 3) CE1#s tAW CE2s tBW tWP (See Note 5) WE# tDW Data In tDH tWR (See Note 4) UB#s, LB#s Data Valid Data Out High-Z High-Z Notes: 1. CE1#s controlled, if CIOs is low, ignore UB#s and LB#s timing. 2. tCW is measured from CE1#s going low to the end of write. 3. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high. 4. tAS is measured from the address valid to the beginning of write. 5. A write occurs during the overlap (tWP) of low CE#1 and low WE#. A write begins when CE1#s goes low and WE# goes low when asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A write ends at the earliest transition when CE1#s goes high and WE# goes high. The tWP is measured from the beginning of write to the end of write. Figure 31. SRAM Write Cycle—CE1#s Control May 13, 2002 Am41PDS3224D 53 PRELIMINARY SRAM AC CHARACTERISTICS tWC Address tCW (See Note 2) tAW CE2s UB#s, LB#s tCW (See Note 2) tBW tAS (See Note 4) tWP (See Note 5) tDW Data In tDH tWR (See Note 3) CE1#s WE# Data Valid Data Out High-Z High-Z Notes: 1. UB#s and LB#s controlled, CIOs must be high. 2. tCW is measured from CE1#s going low to the end of write. 3. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high. 4. tAS is measured from the address valid to the beginning of write. 5. A write occurs during the overlap (tWP) of low CE#1 and low WE#. A write begins when CE1#s goes low and WE# goes low when asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A write ends at the earliest transition when CE1#s goes high and WE# goes high. The tWP is measured from the beginning of write to the end of write. Figure 32. SRAM Write Cycle—UB#s and LB#s Control 54 Am41PDS3224D May 13, 2002 PRELIMINARY FLASH ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Chip Erase Time Word Program Time Accelerated Byte/Word Program Time Chip Program Time (Note 3) Word Mode Typ (Note 1) 1 93 16 5 20 100 360 Max (Note 2) 10 Unit sec sec µs µs Comments Excludes 00h programming prior to erasure (Note 4) Excludes system level overhead (Note 5) Notes: 1. Typical program and erase times assume the following conditions: 25 °C, 2.0 V VCC, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90°C, VCC = 1.8 V, 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 10 for further information on command definitions. 6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles. FLASH LATCHUP CHARACTERISTICS Description Input voltage with respect to VSS on all pins except I/O pins (including OE#, and RESET#) Input voltage with respect to VSS on all I/O pins VCC Current Min –1.0 V –1.0 V –100 mA Max 12.5 V VCC + 1.0 V +100 mA Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time. PACKAGE PIN CAPACITANCE Parameter Symbol CIN COUT CIN2 CIN3 Description Input Capacitance Output Capacitance Control Pin Capacitance WP#/ACC Pin Capacitance Test Setup VIN = 0 VOUT = 0 VIN = 0 VIN = 0 Typ 11 12 14 17 Max 14 16 16 20 Unit pF pF pF pF Note: 7.Test conditions TA = 25°C, f = 1.0 MHz. FLASH DATA RETENTION Parameter Description Minimum Pattern Data Retention Time Test Conditions 150°C 125°C Min 10 20 Unit Years Years May 13, 2002 Am41PDS3224D 55 PRELIMINARY SRAM DATA RETENTION Parameter Symbol VDR IDR tSDR tRDR Parameter Description VCC for Data Retention Data Retention Current Data Retention Set-Up Time Recovery Time Test Setup CS1#s ≥ VCC – 0.2 V (Note 1) VCC = 3.0 V, CE1#s ≥ VCC – 0.2 V (Note 1) See data retention waveforms 0 tRC Min 1.0 0.5 (Note 2) Typ Max 2.2 3 Unit V µA ns ns Notes: 1. CE1#s ≥ VCC – 0.2 V, CE2s ≥ VCC – 0.2 V (CE1#s controlled) or CE2s ≤ 0.2 V (CE2s controlled), CIOs = VSS or VCC. 2. Typical values are not 100% tested. VCC 1.8V tSDR Data Retention Mode tRDR 1.4V VDR CE1#s GND CE1#s ≥ VCC - 0.2 V Figure 33. CE1#s Controlled Data Retention Mode Data Retention Mode VCC 1.8 V CE2s tSDR tRDR VDR 0.4 V GND CE2s < 0.2 V Figure 34. CE2s Controlled Data Retention Mode 56 Am41PDS3224D May 13, 2002 PRELIMINARY PHYSICAL DIMENSIONS FLB073—73-Ball Fine-Pitch Grid Array 8 x 11.6 mm May 13, 2002 Am41PDS3224D 57 PRELIMINARY REVISION SUMMARY Revision A (February 18, 2002) Initial release. Figure 30, SRAM Write Cycle—WE# Control Corrected tBW in Data Out waveform to tWHZ. Revision A+1 (May 13, 2002) Distinctive Characteristics Modified text in “High Performance” bullet. Deleted reference to 48-ball FBGA package. Trademarks Copyright © 2002 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. 58 Am41PDS3224D May 13, 2002