AM42BDS640AGTD9IS

Am42BDS640AG Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG )XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG )XMLWVX Continuity of Specifications 7KHUH LV QR FKDQJH WR WKLV GDWDVKHHW DV D UHVXOW RI RIIHULQJ WKH GHYLFH DV D 6SDQVLRQ SURGXFW $Q\ FKDQJHV WKDW KDYH EHHQ PDGH DUH WKH UHVXOW RI QRUPDO GDWDVKHHW LPSURYHPHQW DQG DUH QRWHG LQ WKH GRFXPHQW UHYLVLRQ VXPPDU\ ZKHUH VXSSRUWHG )XWXUH URXWLQH UHYLVLRQV ZLOO RFFXU ZKHQ DSSURSULDWH DQG FKDQJHV ZLOO EH QRWHG LQ D UHYLVLRQ VXPPDU\ Continuity of Ordering Part Numbers $0' DQG )XMLWVX FRQWLQXH WR VXSSRUW H[LVWLQJ SDUW QXPEHUV EHJLQQLQJ ZLWK ³$P´ DQG ³0%0´ 7R RUGHU WKHVH SURGXFWV SOHDVH XVH RQO\ WKH 2UGHULQJ 3DUW 1XPEHUV OLVWHG LQ WKLV GRFXPHQW For More Information 3OHDVH FRQWDFW \RXU ORFDO $0' RU )XMLWVX VDOHV RIILFH IRU DGGLWLRQDO LQIRUPDWLRQ DERXW 6SDQVLRQ PHPRU\ VROXWLRQV Publication Number 26445 Revision B Amendment 0 Issue Date November 1, 2002 PRELIMINARY Am42BDS640AG Stacked Multi-Chip Package (MCP) Flash Memory and SRAM Am29BDS640G 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features ■ Power supply voltage of 1.65 to 1.95 volt ■ High performance — Access time as fast as 70 ns ■ Power dissipation (typical values, CL = 30 pF) — — — — Burst Mode Read: 10 mA Simultaneous Operation: 25 mA Program/Erase: 15 mA Standby mode: 0.2 µA ■ Package — 93-Ball FBGA HARDWARE FEATURES ■ Software command sector locking ■ Handshaking: host monitors operations via RDY output ■ Hardware reset input (RESET#) ■ WP# input — Write protect (WP#) function protects sectors 0, 1 (bottom boot) or sectors 132 and 133 (top boot), regardless of sector protect status ■ Operating Temperature — –40°C to +85°C Flash Memory Features ARCHITECTURAL ADVANTAGES ■ Single 1.8 volt read, program and erase (1.65 to 1.95 volt) ■ Manufactured on 0.17 µm process technology ■ Simultaneous Read/Write operation — Data can be continuously read from one bank while executing erase/program functions in other bank — Zero latency between read and write operations — Four bank architecture: 16Mb/16Mb/16Mb/16Mb ■ ACC input: Acceleration function reduces programming time; all sectors locked when ACC = VIL ■ CMOS compatible inputs, CMOS compatible outputs ■ Low VCC write inhibit SOFTWARE FEATURES ■ Supports Common Flash Memory Interface (CFI) ■ Software command set compatible with JEDEC 42.4 standards ■ Data# Polling and toggle bits ■ Erase Suspend/Resume — Suspends or resumes an erase operation in one sector to read data from, or program data to, other sectors ■ Programmable Burst Interface — 2 Modes of Burst Read Operation — Linear Burst: 8, 16, and 32 words with wrap-around — Continuous Sequential Burst ■ Sector Architecture — Eight 8 Kword sectors and one hundred twenty-six 32 Kword sectors — Banks A and D each contain four 8 Kword sectors and thirty-one 32 Kword sectors; Banks B and C each contain thirty-two 32 Kword sectors — Eight 8 Kword boot sectors, four at the top of the address range, and four at the bottom of the address range ■ Unlock Bypass Program command — Reduces overall programming time when issuing multiple program command sequences ■ Minimum 1 million erase cycle guarantee per sector ■ 20-year data retention at 125°C SRAM Features ■ Power dissipation — Operating: 3 mA maximum — Standby: 15 µA maximum PERFORMANCE CHARCTERISTICS ■ Read access times at 54/40 MHz — Burst access times of 13.5/20 ns @ 30 pF at industrial temperature range — Asynchronous random access times of 70 ns (at 30 pF) — Synchronous latency of 87.5/95 ns ■ ■ ■ ■ CE1s# and CE2s Chip Select Power down features using CE1s# and CE2s Data retention supply voltage: 1.0 to 2.2 volt Byte data control: LB#s (DQ7–DQ0), UB#s (DQ15–DQ8) This document contains information on a product under development at Advanced Micro Devices. The information is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed product without notice. Publication# 26445 Rev: B Amendment/0 Issue Date: November 1, 2002 Refer to AMD’s Website (www.amd.com) for the latest information. PRELIMINARY GENERAL DESCRIPTION The Am29BDS640G is a 64 Mbit, 1.8 Volt-only, simultaneous Read/Write, Burst Mode Flash memory device, organized as 4,194,304 words of 16 bits each. This device uses a single VCC of 1.65 to 1.95 V to read, program, and erase the memory array. A 12.0-volt VID may be used for faster program performance if desired. The device can also be programmed in standard EPROM programmers. At 54 MHz, the device provides a burst access of 13.5 ns at 30 pF with a latency of 87.5 ns at 30 pF. At 40 MHz, the device provides a burst access of 20 ns at 30 pF with a latency of 95 ns at 30 pF. The device operates within the industrial temperature range of -40°C to +85°C. The device is offered in a 93-ball FBGA package. The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into four banks. The device can improve overall system performance by allowing a host system to program or erase in one bank, then immediately and simultaneously read from another bank, with zero latency. This releases the system from waiting for the completion of program or erase operations. The device is divided as shown in the following table: Bank A 31 B C D 4 8 Kwords 32 32 31 32 Kwords 32 Kwords 32 Kwords 32 Kwords Quantity 4 Size 8 Kwords The device is entirely command set compatible with the JEDEC 42.4 single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timing. Register contents serve as inputs to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. The Erase Suspend/Erase Resume feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved. The h ardware RESET# pin t erminates any operation in progress and resets the internal state machine to reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system microprocessor to read boot-up firmware from the Flash memory device. The host system can detect whether a program or erase operation is complete by using the device status bit DQ7 (Data# Polling) and DQ6/DQ2 (toggle bits). After a program or erase cycle has been completed, the device automatically returns to reading array data. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The device also offers two types of data protection at the sector level. The sector lock/unlock command sequence disables or re-enables both program and erase operations in any sector. When at VIL, WP# locks sectors 0 and 1 (bottom boot device) or sectors 132 and 133 (top boot device). The device offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters the automatic sleep mode. The system can also place the device into the standby mode. Power consumption is greatly reduced in both modes. AMD’s Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunnelling. The data is programmed using hot electron injection. The device uses Chip Enable (CE#), Write Enable (WE#), Address Valid (AVD#) and Output Enable (OE#) to control asynchronous read and write operations. For burst operations, the device additionally requires Ready (RDY), and Clock (CLK). This implementation allows easy interface with minimal glue logic to a wide range of microprocessors/microcontrollers for high performance read operations. The burst read mode feature gives system designers flexibility in the interface to the device. The user can preset the burst length and wrap through the same memory space, or read the flash array in continuous mode. The clock polarity feature provides system designers a choice of active clock edges, either rising or falling. The active clock edge initiates burst accesses and determines when data will be output. 2 Am42BDS640AG November 1, 2002 PRELIMINARY TABLE OF CONTENTS Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 5 MCP Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . 5 Flash Memory Block Diagram. . . . . . . . . . . . . . . . 6 Flash Memory Simultaneous Operation Diagram 7 Connection Diagram . . . . . . . . . . . . . . . . . . . . . . . . 8 Special Package Handling Instructions .................................... 8 Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Ordering Information . . . . . . . . . . . . . . . . . . . . . . 10 MCP Device Bus Operations. . . . . . . . . . . . . . . . 11 Table 1. Device Bus Operations ..................................................... 12 Reset Command ..................................................................... 25 Autoselect Command Sequence ............................................ 26 Table 13. Device IDs ...................................................................... 26 Program Command Sequence ............................................... 26 Unlock Bypass Command Sequence .................................. 27 Figure 2. Erase Operation.............................................................. 27 Chip Erase Command Sequence ........................................... 27 Sector Erase Command Sequence ........................................ 28 Erase Suspend/Erase Resume Commands ........................... 28 Figure 3. Program Operation ......................................................... 29 Command Definitions ............................................................. 30 Table 14. Command Definitions .................................................... 30 Flash Device Bus Operations . . . . . . . . . . . . . . . 13 Requirements for Asynchronous Read Operation (Non-Burst) ............................................................ 13 Requirements for Synchronous (Burst) Read Operation ........ 13 8-, 16-, and 32-Word Linear Burst with Wrap Around ......... 13 Table 2. Burst Address Groups .......................................................13 Flash Write Operation Status . . . . . . . . . . . . . . . 31 DQ7: Data# Polling ................................................................. 31 Figure 4. Data# Polling Algorithm .................................................. 31 RDY: Ready ............................................................................ 32 DQ6: Toggle Bit I .................................................................... 32 Figure 5. Toggle Bit Algorithm........................................................ 32 Burst Mode Configuration Register ........................................ 14 Reduced Wait-State Handshaking Option .............................. 14 Simultaneous Read/Write Operations with Zero Latency ....... 14 Writing Commands/Command Sequences ............................ 14 Accelerated Program Operation .......................................... 14 Autoselect Functions ........................................................... 15 Standby Mode ........................................................................ 15 Automatic Sleep Mode ........................................................... 15 RESET#: Hardware Reset Input ............................................. 15 Output Disable Mode .............................................................. 15 Hardware Data Protection ...................................................... 15 Write Protect (WP#) ............................................................. 16 Low VCC Write Inhibit ........................................................... 16 Write Pulse “Glitch” Protection ............................................ 16 Logical Inhibit ...................................................................... 16 Power-Up Write Inhibit ......................................................... 16 Common Flash Memory Interface (CFI) . . . . . . . 16 Table 3. CFI Query Identification String ..........................................16 System Interface String................................................................... 17 Table 5. Device Geometry Definition .............................................. 17 Table 6. Primary Vendor-Specific Extended Query ........................18 Table 7. Sector Address Table ........................................................19 DQ2: Toggle Bit II ................................................................... 32 Table 15. DQ6 and DQ2 Indications .............................................. 33 Reading Toggle Bits DQ6/DQ2 ............................................... 33 DQ5: Exceeded Timing Limits ................................................ 33 DQ3: Sector Erase Timer ....................................................... 34 Table 16. Write Operation Status ................................................... 34 Absolute Maximum Ratings . . . . . . . . . . . . . . . . 35 Figure 6. Maximum Negative Overshoot Waveform ...................... 35 Figure 7. Maximum Positive Overshoot Waveform........................ 35 Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . Flash DC Characteristics . . . . . . . . . . . . . . . . . . SRAM DC and Operating Characteristics . . . . . Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 35 36 37 38 Figure 8. Test Setup....................................................................... 38 Table 17. Test Specifications ......................................................... 38 Key to Switching Waveforms. . . . . . . . . . . . . . . . 38 Figure 9. Input Waveforms and Measurement Levels ................... 38 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 39 SRAM CE#s Timing ................................................................ 39 Figure 10. Timing Diagram for Alternating Between SRAM and Flash ............................................................. 39 Flash Command Definitions . . . . . . . . . . . . . . . . 23 Reading Array Data ................................................................ 23 Set Burst Mode Configuration Register Command Sequence 23 Figure 1. Synchronous/Asynchronous State Diagram .................... 23 Synchronous/Burst Read ........................................................ 40 Figure 11. CLK Synchronous Burst Mode Read (rising active CLK).......................................................................... Figure 12. CLK Synchronous Burst Mode Read (Falling Active Clock) ..................................................................... Figure 13. Synchronous Burst Mode Read .................................... Figure 14. 8-word Linear Burst with Wrap Around ......................... Figure 15. Burst with RDY Set One Cycle Before Data ................. Figure 16. Reduced Wait-State Handshaking Burst Mode Read Starting at an Even Address .......................................................... Figure 17. Reduced Wait-State Handshaking Burst Mode Read Starting at an Odd Address............................................................ 41 42 43 43 44 45 46 Read Mode Setting .............................................................. 23 Programmable Wait State Configuration ............................. 23 Table 8. Programmable Wait State Settings ...................................24 Handshaking Option ............................................................ 24 Table 9. Initial Access Codes ..........................................................24 Standard Handshaking Operation ....................................... 24 Table 10. Wait States for Standard Handshaking ...........................24 Burst Read Mode Configuration .......................................... 24 Table 11. Burst Read Mode Settings ..............................................25 Asynchronous Read ............................................................... 47 Figure 18. Asynchronous Mode Read with Latched Addresses .... 47 Figure 19. Asynchronous Mode Read............................................ 48 Figure 20. Reset Timings ............................................................... 49 Burst Active Clock Edge Configuration ................................ 25 RDY Configuration ............................................................... 25 Configuration Register ............................................................ 25 Table 12. Burst Mode Configuration Register .................................25 Erase/Program Operations ..................................................... 50 Figure 21. Asynchronous Program Operation Timings .................. 51 Figure 22. Alternate Asynchronous Program Operation Timings... 52 Figure 23. Synchronous Program Operation Timings.................... 53 Sector Lock/Unlock Command Sequence .............................. 25 November 1, 2002 Am42BDS640AG 3 PRELIMINARY Figure 24. Alternate Synchronous Program Operation Timings ..... 54 Figure 25. Chip/Sector Erase Command Sequence ....................... 55 Figure 26. Accelerated Unlock Bypass Programming Timing......... 56 Figure 27. Data# Polling Timings (During Embedded Algorithm) ... 57 Figure 28. Toggle Bit Timings (During Embedded Algorithm)......... 57 Figure 29. Synchronous Data Polling Timings/Toggle Bit Timings . 58 Figure 30. Latency with Boundary Crossing ................................... 59 Figure 31. Latency with Boundary Crossing into Program/Erase Bank ................................................................ 60 Figure 32. Example of Wait States Insertion (Standard Handshaking Device) ...................................................................... 61 Figure 33. Back-to-Back Read/Write Cycle Timings ....................... 62 Write Cycle ............................................................................. 65 Figure 36. SRAM Write Cycle—WE# Control ................................ 65 Figure 37. SRAM Write Cycle—CE1#s Control ............................. 66 Figure 38. SRAM Write Cycle—UB#s and LB#s Control ............... 67 Flash Erase And Programming Performance . Flash Latchup Characteristics. . . . . . . . . . . . . . . Package Pin Capacitance . . . . . . . . . . . . . . . . . . Flash Data Retention . . . . . . . . . . . . . . . . . . . . . . SRAM Data Retention . . . . . . . . . . . . . . . . . . . . . 68 68 68 68 69 Figure 39. CE1#s Controlled Data Retention Mode....................... 69 Figure 40. CE2s Controlled Data Retention Mode......................... 69 SRAM AC Characteristics . . . . . . . . . . . . . . . . . . 63 Read Cycle ............................................................................. 63 Figure 34. SRAM Read Cycle—Address Controlled....................... 63 Figure 35. SRAM Read Cycle ......................................................... 64 Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 70 FSC093—93-Ball Fine-Pitch Grid Array 8 x 11.6 mm ............ 70 Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 71 Revision A (May 20, 2002) ..................................................... 71 4 Am42BDS640AG November 1, 2002 PRELIMINARY PRODUCT SELECTOR GUIDE Part Number Burst Frequency Speed Option VCC, VIO = 1.65 – 1.95 V Am42BDS640AG 54 MHz D8, D9 87.5 106 13.5 70 13.5 70 35 40 MHz C8, C9 95 120 20 85 20 85 40 Max Initial Synchronous Access Time, ns (tIACC) Reduced Wait-state Handshaking: Even Address Max Initial Synchronous Access Time, ns (tIACC) Reduced Wait-state Handshaking: Odd Address; or Standard Handshaking Max Burst Access Time, ns (tBACC) Max Asynchronous Access Time, ns (tACC) Max CE# Access, ns (tCE) Max OE# Access, ns (tOE) SRAM Max Access Time, ns (tACC) Max CE# Access, ns (tCE) Max OE# Access, ns (tOE) MCP BLOCK DIAGRAM VCCf/VIOf VSS RDY Flash A21 to A0 CLK WP# RESET# CE#f ACC AVD# A21 to A0 64 M Bit Flash Memory DQ15 to DQ0 DQ15 to DQ0 VCCs VSS A0 toto A0 A19 A19 LB#s UB#s WE# OE# CE1#s CE2s 16 M Bit Static RAM DQ15 to DQ0 November 1, 2002 Am42BDS640AG 5 PRELIMINARY FLASH MEMORY BLOCK DIAGRAM VCC VSS VSSIO VIO RDY Buffer RDY Erase Voltage Generator WE# RESET# WP# ACC State Control Command Register Input/Output Buffers DQ15–DQ0 PGM Voltage Generator Chip Enable Output Enable Logic Data Latch CE# OE# Y-Decoder Timer Address Latch VCC Detector Y-Gating X-Decoder Cell Matrix AVD# CLK Burst State Control Burst Address Counter A21–A0 6 Am42BDS640AG November 1, 2002 PRELIMINARY FLASH MEMORY SIMULTANEOUS OPERATION DIAGRAM VCC VSS VIO Y-Decoder Bank A Address Latches and Control Logic VSSIO DQ15–DQ0 Bank A A21–A0 X-Decoder OE# Bank B Address Latches and Control Logic Y-Decoder DQ15–DQ0 Bank B WP# ACC RESET# WE# CE# AVD# RDY DQ15–DQ0 A21–A0 X-Decoder DQ15–DQ0 Status STATE CONTROL & COMMAND REGISTER A21–A0 Control X-Decoder Latches and Control Logic Y-Decoder Bank C Address Bank C DQ15–DQ0 A21–A0 A21–A0 X-Decoder Bank D Address Latches and Control Logic Y-Decoder Bank D DQ15–DQ0 November 1, 2002 Am42BDS640AG 7 PRELIMINARY CONNECTION DIAGRAM 93-Ball FBGA Top View A1 NC A10 NC Flash only B1 NC B2 AVD# B3 NC B4 CLK B5 NC B6 NC B7 NC B8 NC B9 NC B10 NC SRAM only C1 NC C2 WP# C3 A7 C4 LB# C5 ACC C6 WE# C7 A8 C8 A11 C9 NC Shared D2 A3 D3 A6 D4 UB# D5 D6 E6 A20 D7 A19 D8 A12 D9 A15 RESET# CE2s E2 A2 E3 A5 E4 A18 E5 RDY E7 A9 E8 A13 E9 A21 F1 NC F2 A1 F3 A4 F4 A17 F5 NC F6 NC F7 A10 F8 A14 F9 NC F10 NC G1 NC G2 A0 G3 VSS G4 DQ1 G5 NC G6 NC G7 DQ6 G8 NC G9 A16 G10 NC H2 CE#f H3 OE# H4 DQ9 H5 DQ3 H6 DQ4 H7 DQ13 H8 DQ15 H9 NC J2 CE#1s J3 DQ0 J4 DQ10 J5 VCCf J6 VCCs J7 DQ12 J8 DQ7 J9 VSS K2 NC K3 DQ8 K4 DQ2 K5 DQ11 K6 NC K7 DQ5 K8 DQ14 K9 NC L1 NC L2 NC L3 NC L4 VSS L5 VIOf L6 NC L7 NC L8 NC L9 NC L10 NC M1 NC M10 NC Note: VIOf must be tied to VCCf. Special Package Handling Instructions Special handling is required for Flash Memory products in molded packages (TSOP, BGA, PLCC, PDIP, SSOP). The package and/or data integrity may be compromised if the package body is exposed to temperatures above 150°C for prolonged periods of time. 8 Am42BDS640AG November 1, 2002 PRELIMINARY PIN DESCRIPTION A19–A0 A21–A20 DQ15–DQ0 CE#f CE1#s CE2s OE# WE# UB#s LB#s RESET# VCCf = 20 Address Inputs (Common) = 2 Address Inputs (Flash) = 16 Data Inputs/Outputs (Common) = Chip Enable (Flash) = Chip Enable 1 (SRAM) = Chip Enable 2 (SRAM) = Output Enable (Common) = Write Enable (Common) = Upper Byte Control (SRAM) = Lower Byte Control (SRAM) = Hardware Reset Pin, Active Low = Flash 1.8 volt-only single power supply (see Product Selector Guide for speed options and voltage supply tolerances) = Input & Output Buffer Power Supply must be tied to VCCf. = SRAM Power Supply = Device Ground (Common) = Pin Not Connected Internally = Ready output; indicates the status of the Burst read. Low = data not valid at expected time. High = data valid. = CLK is not required in asynchronous mode. In burst mode, after the initial word is output, subsequent active edges of CLK increment the internal address counter. = Address Valid input. Indicates to device that the valid address is present on the address inputs (A21–A0). Low = for asynchronous mode, indicates valid address; for burst mode, causes starting address to be latched. 20 High = device ignores address inputs WP# = Hardware write protect input. At VIL, disables program and erase functions in the two outermost sectors. Should be at VIH for all other conditions. = At VID, accelerates programming; automatically places device in unlock bypass mode. At VIL, locks all sectors. Should be at VIH for all other conditions. ACC LOGIC SYMBOL A19–A0 A21–A20 CE#f CE1#s CE2s OE# WE# WP# RESET# UB#s LB#s ACC AVD# CLK RDY DQ15–DQ0 16 VIOf VCCs VSS NC RDY CLK AVD# November 1, 2002 Am42BDS640AG 9 PRELIMINARY ORDERING INFORMATION The order number (Valid Combination) is formed by the following: Am42BDS640 A G T D 8 I T TAPE AND REEL T = 7 inches S = 13 inches TEMPERATURE RANGE I = Industrial (–40°C to +85°C) VIO AND HANDSHAKING FEATURES 8 = 1.8 V VIO, reduced wait-state handshaking 9 = 1.8 V VIO, standard handshaking CLOCK RATE/ASYNCHRONOUS SPEED/SRAM SPEED D = 54 MHz/70 ns/70 ns C = 40 MHz/85 ns/85 ns BOOT SECTOR T = Top Boot Sector B = Bottom Boot Sector PROCESS TECHNOLOGY G= 0.17 µm SRAM DEVICE DENSITY A = 16 Mbits AMD DEVICE NUMBER/DESCRIPTION Am42BDS640AG Stacked Multi-Chip Package (MCP) Flash Memory and SRAM Am29BDS640G 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM 93-Ball Fine-pitch Ball Grid Array Package, 8.0 x 11.6 mm, 0.8 mm ball pitch (FSC093) Valid Combinations Order Number Am42BDS640AGTD8I Am42BDS640AGBD8I Am42BDS640AGTD9I Am42BDS640AGBD9I T, S Am42BDS640AGTC8I Am42BDS640AGBC8I Am42BDS640AGTC9I Am42BDS640AGBC9I Package Marking M42000004Y M42000004Z Burst Frequency (MHz) VIO Range 54 M420000050 M420000051 M420000052 M420000053 40 M420000054 M420000055 1.65 – 1.95 V Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations. 10 Am42BDS640AG November 1, 2002 PRELIMINARY MCP DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory location. The r egis ter is a l atch us ed to s tore th e commands, along with the address and data information needed to execute the command. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. Table 1 lists the device bus operations, the inputs and control levels they require, and the resulting output. The following subsections describe each of these operations in further detail. November 1, 2002 Am42BDS640AG 11 PRELIMINARY Table 1. CE1#s Operation Asynchronous Read from Flash, Addresses Latched Asynchronous Read from Flash, Addresses Steady State Asynchronous Write to Flash Synchronous Write to Flash CE# Standby Output Disable Hardware Reset CE#f (Note 3) L L L L H L H X H L L X X Hi-Z Hi-Z DOUT Read from SRAM H L H L H AIN DOUT Hi-Z DIN Wirte to SRAM H L H X L AIN DIN HI-Z Flash Burst Read Operations Load Starting Burst Address Advance Burst to next address with appropriate Data presented on the Data Bus Terminate current Burst read cycle Terminate current Burst read cycle via RESET# Terminate current Burst read cycle and start new Burst read cycle L H L X H Addr In HIGH Z Hi-Z Hi-Z Hi-Z X Burst Data Out Hi-Z Hi-Z I/O X X H Hi-Z DOUT Hi-Z DOUT DIN Hi-Z DIN H H H H H H L L L L L L H H Hi-Z Hi-Z Hi-Z X X L H L L H L L X L L H L L H H X X H X X L X X L L H H X H H L L X CE2s OE# WE# Device Bus Operations LB#s UB#s RESET# (Note 4) X X X X X L X X X X X X H X X H H H H H X X X X X X L L CLK AVD# A [21–0] AIN AIN AIN AIN Hi-Z DQ [15–8] I/O I/O I/O I/O DQ [7–0] Hi-Z L H L L H X X H H H X L H H H L L L X X X H H H X X X X X X H L H X X X Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 9–11 V, VHH = 9.0 ± 0.5 V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out = Active edge of CLK, = Pulse Low, = Rising edge of Pulse Low Notes: 1. Other operations except for those indicated in this column are inhibited. 2. 3. 4. 5. Do not apply CE#f = VIL, CE1#s = VIL and CE2s = VIH at the same time. Either CE1#s = VIH or CE2s = VIL will disable the SRAM. If one of these conditions is true, the other CE input is don’t care. X = Don’t care or open LB#s or UB#s. Default edge of CLK is the rising edge. 6. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector Lock/Unlock Command Sequence”section. If ACC = VHH, all sectors will be protected. If WP# = VIL, sectors 0,1 (bottom boot) or sectors 132, 133 (top boot) are protected. If WP# = VIH, the protection applied to the aforementioned sectors depends on whether they were last protected or unprotected using the method described in “Sector Lock/Unlock Command Sequence”. Note that WP# must not be left floating or unconnected. 7. 8. 12 Am42BDS640AG November 1, 2002 PRELIMINARY FLASH DEVICE BUS OPERATIONS Requirements for Asynchronous Read Operation (Non-Burst) To read data from the memory array, the system must first assert a valid address on A21–A0, while driving AVD# and CE# to VIL. WE# should remain at VIH. The rising edge of AVD# latches the address. The data will appear on DQ15–DQ0. Since the memory array is divided into four banks, each bank remains enabled for read access until the command register contents are altered. Address access time (tACC) is equal to the delay from stable addresses to valid output data. The chip enable access time (tCE) is the delay from the stable addresses and stable CE# to valid data at the outputs. The output enable access time (tOE) is the delay from the falling edge of OE# to valid data at the output. The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power transition. by pulsing low. For standard handshaking devices, there is no two cycle latency between 3Fh and 40h (or multiple thereof). See Table 10. For reduced wait-state handshaking devices, if the address latched is 3Dh (or 64 multiple), an additional cycle latency occurs prior to the initial access. If the address latched is 3Eh (or 64 multiple) two additional cycle latency occurs prior to the initial access and the 2 cycle latency between 3Fh and 40h (or 64 multiple) will not occur. For 3Fh latched addresses (or 64 multiple) three additional cycle latency occurs prior to the initial access and the 2 cycle latency between 3Fh and 40h (or 64 multiple) will not occur. The device will continue to output sequential burst data, wrapping around to address 000000h after it reaches the highest addressable memory location, until the system drives CE# high, RESET# low, or AVD# low in conjunction with a new address. See Table 1, “Device Bus Operations,” on page 12. If the host system crosses the bank boundary while reading in burst mode, and the device is not programming or erasing, a two-cycle latency will occur as described above in the subsequent bank. If the host system crosses the bank boundary while the device is programming or erasing, the device will provide read status information. The clock will be ignored. After the host has completed status reads, or the device has completed the program or erase operation, the host can restart a burst operation using a new address and AVD# pulse. If the clock frequency is less than 6 MHz during a burst mode operation, additional latencies will occur. RDY indicates the length of the latency by pulsing low. 8-, 16-, and 32-Word Linear Burst with Wrap Around The remaining three modes are of the linear wrap around design, in which a fixed number of words are read from consecutive addresses. In each of these modes, the burst addresses read are determined by the group within which the starting address falls. The groups are sized according to the number of words read in a single burst sequence for a given mode (see Table 2.) Table 2. Mode 8-word 16-word 32-word Requirements for Synchronous (Burst) Read Operation The device is capable of continuous sequential burst operation and linear burst operation of a preset length. When the device first powers up, it is enabled for asynchronous read operation. Prior to entering burst mode, the system should determine how many wait states are desired for the initial word (tIACC) of each burst access, what mode of burst operation is desired, which edge of the clock will be the active clock edge, and how the RDY signal will transition with valid data. The system would then write the burst mode configuration register command sequence. See “Set Burst Mode Configuration Register Command Sequence” and “Flash Command Definitions” for further details. Once the system has written the “Set Burst Mode Configuration Register” command sequence, the device is enabled for synchronous reads only. The initial word is output tIACC after the active edge of the first CLK cycle. Subsequent words are output tBACC after the active edge of each successive clock cycle, which automatically increments the internal address counter. Note that the device has a fixed internal address boundary that occurs every 64 words, starting at address 00003Fh. During the time the device is outputting data at this fixed internal address boundary (address 00003Fh, 00007Fh, 0000BFh, etc.), a two cycle latency occurs before data appears for the next address (address 000040h, 000080h, 0000C0h, etc.). The RDY output indicates this condition to the system Burst Address Groups Group Size Group Address Ranges 8 words 16 words 32 words 0-7h, 8-Fh, 10-17h, ... 0-Fh, 10-1Fh, 20-2Fh, ... 00-1Fh, 20-3Fh, 40-5Fh, ... As an example: if the starting address in the 8-word mode is 39h, the address range to be read would be 38-3Fh, and the burst sequence would be November 1, 2002 Am42BDS640AG 13 PRELIMINARY 39-3A-3B-3C-3D-3E-3F-38h-etc. The burst sequence begins with the starting address written to the device, but wraps back to the first address in the selected group. In a similar fashion, the 16-word and 32-word Linear Wrap modes begin their burst sequence on the starting address written to the device, and then wrap back to the first address in the selected address group. Note that in these three burst read modes the address pointer does not cross the boundary that occurs every 64 words; thus, no wait states are inserted (except during the initial access). The RDY pin indicates when data is valid on the bus. The devices can wrap through a maximum of 128 words of data (8 words up to 16 times, 16 words up to 8 times, or 32 words up to 4 times) before requiring a new synchronous access (latching of a new address). Simultaneous Read/Write Operations with Zero Latency This device is capable of reading data from one bank of memory while programming or erasing in another bank of memory. An erase operation may also be suspended to read from or program to another location within the same bank (except the sector being erased). Figure 33, “Back-to-Back Read/Write Cycle Timings,” on page 62 shows how read and write cycles may be initiated for simultaneous operation with zero latency. Refer to the DC Characteristics table for read-while-program and read-while-erase current specifications. Writing Commands/Command Sequences The device has the capability of performing an asynchronous or synchronous write operation. During a synchronous write operation, to write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive AVD# and CE# to VIL, and OE# to VIH when providing an address to the device, and drive WE# and CE# to VIL, and OE# to VIH. when writing commands or data. During an asynchronous write operation, the system must drive CE# and WE# to VIL and OE# to VIH when providing an address, command, and data. The asynchronous and synchronous programing operation is independent of the Set Device Read Mode bit in the Burst Mode Configuration Register. The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the Unlock Bypass mode, only two write cycles are required to program a word, instead of four. An erase operation can erase one sector, multiple sectors, or the entire device. Table 8, “Programmable Wait State Settings,” on page 24 indicates the address space that each sector occupies. The device address space is divided into four banks: Banks B and C contain only 32 Kword sectors, while Banks A and D contain both 8 Kword boot sectors in addition to 32 Kword sectors. A “bank address” is the address bits required to uniquely select a bank. Similarly, a “sector address” is the address bits required to uniquely select a sector. ICC2 i n the DC Characteristics table represents the active current specification for the write mode. The AC Characteristics section contains timing specification tables and timing diagrams for write operations. Accelerated Program Operation The device offers accelerated program operations through the ACC function. ACC is primarily intended to allow faster manufacturing throughput at the factory. If the system asserts VID on this input, the device automatically enters the aforementioned Unlock Bypass Burst Mode Configuration Register The device uses a configuration register to set the various burst parameters: number of wait states, burst read mode, active clock edge, RDY configuration, and synchronous mode active. Reduced Wait-State Handshaking Option The device can be equipped with a reduced wait-state handshaking feature that allows the host system to simply monitor the RDY signal from the device to determine when the initial word of burst data is ready to be read. The host system should use the programmable wait state configuration to set the number of wait states for optimal burst mode operation. The initial word of burst data is indicated by the rising edge of RDY after OE# goes low. The presence of the reduced wait-state handshaking feature may be verified by writing the autoselect command sequence to the device. See “Autoselect Command Sequence” for details. For optimal burst mode performance on devices without the reduced wait-state handshaking option, the host system must set the appropriate number of wait states in the flash device depending on clock frequency and the presence of a boundary crossing. See “Set Burst Mode Configuration Register Command Sequence” section on page 23 section for more information. The device will automatically delay RDY and data by one additional clock cycle when the starting address is odd. The autoselect function allows the host system to determine whether the flash device is enabled for reduced wait-state handshaking. See the “Autoselect Command Sequence” section for more information. 14 Am42BDS640AG November 1, 2002 PRELIMINARY m ode and uses the higher voltage on the input to reduce the time required for program operations. The system would use a two-cycle program command sequence as required by the Unlock Bypass mode. Removing VID from the ACC input returns the device to normal operation. Note that sectors must be unlocked prior to raising ACC to VID. Note that the ACC pin must not be at VID for operations other than accelerated programming, or device damage may result. In addition, the ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result. When at VIL, ACC locks all sectors. ACC should be at VIH for all other conditions. Autoselect Functions If the sy stem writes the autoselect c ommand sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on DQ15–DQ0. Autoselect mode may only be entered and used when in the asynchronous read mode. Refer to the “Autoselect Command Sequence” section on page 26 section for more information. ICC4 in the “Flash DC Characteristics” section on page 36 represents the automatic sleep mode current specification. RESET#: Hardware Reset Input The RESET# input provides a hardware method of resetting the device to reading array data. When RESET# is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all outputs, resets the configuration register, and ignores all read/write commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity. Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS ± 0.2 V, the device draws CMOS standby current (ICC4). If RESET# is held at VIL but not within VSS ± 0.2 V, the standby current will be greater. RESET# may be tied to the system reset circuitry. A system reset would thus also reset the Flash memory, enabling the system to read the boot-up firmware from the Flash memory. If RESET# is asserted during a program or erase operation, the device requires a time of t READY ( during Embedded Algorithms) before the device is ready to read data again. If RESET# is asserted when a program or erase operation is not executing, the reset operation is completed within a time of t READY (not during Embedded Algorithms). The system can read data tRH after RESET# returns to VIH. Refer to the AC Characteristics tables for RESET# parameters and to Figure 20, “Reset Timings,” on page 49 for the timing diagram. Standby Mode When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. The device enters the CMOS standby mode when the CE# and RESET# inputs are both held at VCC ± 0.2 V. The device requires standard access time (tCE) for read access, before it is ready to read data. If the device is deselected during erasure or programming, the device draws active current until the operation is completed. ICC3 i n the DC Characteristics table represents the standby current specification. Output Disable Mode When the OE# input is at VIH, output from the device is disabled. The outputs are placed in the high impedance state. Automatic Sleep Mode The automatic sleep mode minimizes Flash device energy consumption. While in asynchronous mode, the device automatically enables this mode when addresses remain stable for tACC + 60 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. While in synchronous mode, the device automatically enables this mode when either the first active CLK edge occurs after tACC or the CLK runs slower than 5MHz. Note that a new burst operation is required to provide new data. Hardware Data Protection The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to Table 14, “Command Definitions,” on page 30 for command definitions). The device offers two types of data protection at the sector level: ■ The sector lock/unlock command sequence disables or re-enables both program and erase operations in any sector. November 1, 2002 Am42BDS640AG 15 PRELIMINARY ■ When WP# is at VIL, sectors 0 and 1 (bottom boot) or sectors 132 and 133 (top boot) are locked. ■ When ACC is at VIL, all sectors are locked. The following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during VCC power-up and power-down transitions, or from system noise. Write Protect (WP#) The Write Protect (WP#) input provides a hardware method of protecting data without using VID. If the system asserts VIL on the WP# pin, the device disables program and erase functions in sectors 0 and 1 (bottom boot) or sectors 132 and 133 (top boot). If the system asserts VIH on the WP# pin, the device reverts to whether the two outermost 8K Byte boot sectors were last set to be protected or unprotected. Note that the WP# pin must not be left floating or unconnected; inconsistent behavior of the device may result. Low VCC Write Inhibit When VCC is less than VLKO, the device does not accept any write cycles. This protects data during V CC power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets to reading array data. Subsequent writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control inputs to prevent unintentional writes when VCC is greater than VLKO. Write Pulse “Glitch” Protection Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle. Logical Inhibit Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a logical one. Power-Up Write Inhibit If WE# = CE# = RESET# = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to the read mode on power-up. addresses given in Tables 3-6. To terminate reading CFI data, the system must write the reset command. The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query mode, and the system can read CFI data at the addresses given in Tables 3-6. The system must write the reset command to return the device to the autoselect mode. For further information, please refer to the CFI Specification and CFI Publication 100, available via the AMD site at the following URL: http://www.amd.com/us-en/FlashMemory/TechnicalResources/0,,37_1693_1780_1834^1955,00.html. Alternatively, contact an AMD representative for copies of these documents. COMMON FLASH MEMORY INTERFACE (CFI) The Common Flash Interface (CFI) specification outlines device and host system software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors can standardize their existing interfaces for long-term compatibility. This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h any time the device is ready to read array data. The system can read CFI information at the Table 3. Addresses 10h 11h 12h 13h 14h 15h 16h 17h 18h Data 0051h 0052h 0059h 0002h 0000h 0040h 0000h 0000h 0000h CFI Query Identification String Description Query Unique ASCII string “QRY” Primary OEM Command Set Address for Primary Extended Table Alternate OEM Command Set (00h = none exists) 16 Am42BDS640AG November 1, 2002 PRELIMINARY 19h 1Ah 0000h 0000h Address for Alternate OEM Extended Table (00h = none exists) Table 4. System Interface String Addresses 1Bh 1Ch 1Dh 1Eh 1Fh 20h 21h 22h 23h 24h 25h 26h Data 0017h 0019h 0000h 0000h 0004h 0000h 0009h 0000h 0004h 0000h 0004h 0000h VCC Min. (write/erase) D7–D4: volt, D3–D0: 100 millivolt VCC Max. (write/erase) D7–D4: volt, D3–D0: 100 millivolt VPP Min. voltage (00h = no VPP pin present) VPP Max. voltage (00h = no VPP pin present) Typical timeout per single byte/word write 2N µs Typical timeout for Min. size buffer write 2N µs (00h = not supported) Typical timeout per individual block erase 2N ms Typical timeout for full chip erase 2N ms (00h = not supported) Max. timeout for byte/word write 2N times typical Max. timeout for buffer write 2N times typical Max. timeout per individual block erase 2N times typical Max. timeout for full chip erase 2N times typical (00h = not supported) Description Table 5. Addresses 27h 28h 29h 2Ah 2Bh 2Ch 2Dh 2Eh 2Fh 30h 31h 32h 33h 34h 35h 36h 37h 38h 39h 3Ah 3Bh 3Ch Data 0017h 0001h 0000h 0000h 0000h 0003h 0003h 0000h 0040h 0000h 007Dh 0000h 0000h 0001h 0003h 0000h 0040h 0000h 0000h 0000h 0000h 0000h Device Geometry Definition Description Device Size = 2N byte Flash Device Interface description (refer to CFI publication 100) Max. number of bytes in multi-byte write = 2N (00h = not supported) Number of Erase Block Regions within device Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100) Erase Block Region 2 Information Erase Block Region 3 Information Erase Block Region 4 Information November 1, 2002 Am42BDS640AG 17 PRELIMINARY Table 6. Primary Vendor-Specific Extended Query Addresses 40h 41h 42h 43h 44h 45h Data 0050h 0052h 0049h 0031h 0033h 0004h Query-unique ASCII string “PRI” Major version number, ASCII Minor version number, ASCII Address Sensitive Unlock (Bits 1-0) 0 = Required, 1 = Not Required Silicon Technology (Bits 5-2) 0001 = 0.17 µm 46h 47h 48h 49h 4Ah 4Bh 4Ch 4Dh 0002h 0001h 0000h 0005h 0063h 0001h 0000h 00B5h Erase Suspend 0 = Not Supported, 1 = To Read Only, 2 = To Read & Write Sector Protect 0 = Not Supported, X = Number of sectors in per group Sector Temporary Unprotect 00 = Not Supported, 01 = Supported Sector Protect/Unprotect scheme 04 = 29LV800 mode Simultaneous Operation Number of Sectors in all banks except boot block Burst Mode Type 00 = Not Supported, 01 = Supported Page Mode Type 00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page ACC (Acceleration) Supply Minimum 00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV ACC (Acceleration) Supply Maximum 00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV Top/Bottom Boot Sector Flag 02h = Bottom Boot Device, 03h = Top Boot Device Program Suspend. 00h = not supported Bank Organization: X = Number of banks Bank A Region Information. X = Number of sectors in bank Bank B Region Information. X = Number of sectors in bank Bank C Region Information. X = Number of sectors in bank Bank D Region Information. X = Number of sectors in bank Description 4Eh 00C5h 4Fh 50h 57h 58h 59h 5Ah 5Bh 00xxh 0000h 0004h 0023h 0020h 0020h 0023h 18 Am42BDS640AG November 1, 2002 PRELIMINARY Table 7. Sector Address Table Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 Bank D SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 Sector Size 8 Kwords 8 Kwords 8 Kwords 8 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords (x16) Address Range 000000h-001FFFh 002000h-003FFFh 004000h-005FFFh 006000h-007FFFh 008000h-00FFFFh 010000h-017FFFh 018000h-01FFFFh 020000h-027FFFh 028000h-02FFFFh 030000h-037FFFh 038000h-03FFFFh 040000h-047FFFh 048000h-04FFFFh 050000h-057FFFh 058000h-05FFFFh 060000h-067FFFh 068000h-06FFFFh 070000h-077FFFh 078000h-07FFFFh 080000h-087FFFh 088000h-08FFFFh 090000h-097FFFh 098000h-09FFFFh 0A0000h-0A7FFFh 0A8000h-0AFFFFh 0B0000h-0B7FFFh 0B8000h-0BFFFFh 0C0000h-0C7FFFh 0C8000h-0CFFFFh 0D0000h-0D7FFFh 0D8000h-0DFFFFh 0E0000h-0E7FFFh 0E8000h-0EFFFFh 0F0000h-0F7FFFh 0F8000h-0FFFFFh November 1, 2002 Am42BDS640AG 19 PRELIMINARY Table 7. Sector Address Table (Continued) Sector SA35 SA36 SA37 SA38 SA39 SA40 SA41 SA42 SA43 SA44 SA45 SA46 SA47 SA48 SA49 Bank C SA50 SA51 SA52 SA53 SA54 SA55 SA56 SA57 SA58 SA59 SA60 SA61 SA62 SA63 SA64 SA65 SA66 Sector Size 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords (x16) Address Range 100000h-107FFFh 108000h-10FFFFh 110000h-117FFFh 118000h-11FFFFh 120000h-127FFFh 128000h-12FFFFh 130000h-137FFFh 138000h-13FFFFh 140000h-147FFFh 148000h-14FFFFh 150000h-157FFFh 158000h-15FFFFh 160000h-167FFFh 168000h-16FFFFh 170000h-177FFFh 178000h-17FFFFh 180000h-187FFFh 188000h-18FFFFh 190000h-197FFFh 198000h-19FFFFh 1A0000h-1A7FFFh 1A8000h-1AFFFFh 1B0000h-1B7FFFh 1B8000h-1BFFFFh 1C0000h-1C7FFFh 1C8000h-1CFFFFh 1D0000h-1D7FFFh 1D8000h-1DFFFFh 1E0000h-1E7FFFh 1E8000h-1EFFFFh 1F0000h-1F7FFFh 1F8000h-1FFFFFh 20 Am42BDS640AG November 1, 2002 PRELIMINARY Table 7. Sector Address Table (Continued) Sector SA67 SA68 SA69 SA70 SA71 SA72 SA73 SA74 SA75 SA76 SA77 SA78 SA79 SA80 SA81 Bank B SA82 SA83 SA84 SA85 SA86 SA87 SA88 SA89 SA90 SA91 SA92 SA93 SA94 SA95 SA96 SA97 SA98 Sector Size 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords 32 Kwords (x16) Address Range 200000h-207FFFh 208000h-20FFFFh 210000h-217FFFh 218000h-21FFFFh 220000h-227FFFh 228000h-22FFFFh 230000h-237FFFh 238000h-23FFFFh 240000h-247FFFh 248000h-24FFFFh 250000h-257FFFh 258000h-25FFFFh 260000h-267FFFh 268000h-26FFFFh 270000h-277FFFh 278000h-27FFFFh 280000h-287FFFh 288000h-28FFFFh 290000h-297FFFh 298000h-29FFFFh 2A0000h-2A7FFFh 2A8000h-2AFFFFh 2B0000h-2B7FFFh 2B8000h-2BFFFFh 2C0000h-2C7FFFh 2C8000h-2CFFFFh 2D0000h-2D7FFFh 2D8000h-2DFFFFh 2E0000h-2E7FFFh 2E8000h-2EFFFFh 2F0000h-2F7FFFh 2F8000h-2FFFFFh November 1, 2002 Am42BDS640AG 21 PRELIMINARY Table 7. Sector Address Table (Continued) Sector SA99 SA100 SA101 SA102 SA103 SA104 SA105 SA106 SA107 SA108 SA109 SA110 SA111 SA112 SA113 SA114 SA115 Bank A SA116 SA117 SA118 SA119 SA120 SA121 SA122 SA123 SA124 SA125 SA126 SA127 SA128 SA129 SA130 SA131 SA132 SA133 Sector Size 32K words 32K words 32K words 32K words 32K words 32K words 32K words 32K words 32K words 32K words 32K words 32K words 32K words 32K words 32K words 32K words 32K words 32K words 32K words 32K words 32K words 32K words 32K words 32K words 32K words 32K words 32K words 32K words 32K words 32K words 32K words 8K words 8K words 8K words 8K words (x16) Address Range 300000h-307FFFh 308000h-30FFFFh 310000h-317FFFh 318000h-31FFFFh 320000h-327FFFh 328000h-32FFFFh 330000h-337FFFh 338000h-33FFFFh 340000h-347FFFh 348000h-34FFFFh 350000h-357FFFh 358000h-35FFFFh 360000h-367FFFh 368000h-36FFFFh 370000h-377FFFh 378000h-37FFFFh 380000h-387FFFh 388000h-38FFFFh 390000h-397FFFh 398000h-39FFFFh 3A0000h-3A7FFFh 3A8000h-3AFFFFh 3B0000h-3B7FFFh 3B8000h-3BFFFFh 3C0000h-3C7FFFh 3C8000h-3CFFFFh 3D0000h-3D7FFFh 3D8000h-3DFFFFh 3E0000h-3E7FFFh 3E8000h-3EFFFFh 3F0000h-3F7FFFh 3F8000h-3F9FFFh 3FA000h-3FBFFFh 3FC000h-3FDFFFh 3FE000h-3FFFFFh 22 Am42BDS640AG November 1, 2002 PRELIMINARY FLASH COMMAND DEFINITIONS Writing specific address and data commands or sequences into the command register initiates device operations. Table 14, “Command Definitions,” on p a g e 3 0 d e f i n e s th e v a l i d r e g i s t e r c o m m a n d sequences. Writing incorrect address and data values or writing them in the improper sequence resets the device to reading array data. Refer to the AC Characteristics section for timing diagrams. 555h, and address bits A19–A12 set the code to be latched. The device will power up or after a hardware reset with the default setting, which is in asynchronous mode. The register must be set before the device can enter synchronous mode. The burst mode configuration register can not be changed during device operations (program, erase, or sector lock). Reading Array Data The device is automatically set to reading array data after device power-up. No commands are required to retrieve data in asynchronous mode. Each bank is rea dy to r ead ar ray data after c ompl eting a n Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the corresponding bank enters the erase-suspend-read mode, after which the system can read data from any non-erase-suspended sector within the same bank. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See the “Erase Suspend/Erase Resume Commands” section on page 28 section for more information. The system must issue the reset command to return a bank to the read (or erase-suspend-read) mode if DQ5 goes high during an active program or erase operation, or if the bank is in the autoselect mode. See the “Reset Command” section on page 25 section for more information. See also “Requirements for Asynchronous Read Operation (Non-Burst)” and “Requirements for Synchronous (Burst) Read Operation” sections for more information. The Asynchronous Read and Synchronous/Burst Read tables provide the read parameters, and Figures 11, 13, and 18 show the timings. Power-up/ Hardware Reset Asynchronous Read Mode Only Set Burst Mode Configuration Register Command for Synchronous Mode (A19 = 0) Set Burst Mode Configuration Register Command for Asynchronous Mode (A19 = 1) Synchronous Read Mode Only Figure 1. Synchronous/Asynchronous State Diagram Read Mode Setting On power-up or hardware reset, the device is set to be in asynchronous read mode. This setting allows the system to enable or disable burst mode during system operations. Address A19 determines this setting: “1’ for asynchronous mode, “0” for synchronous mode. Programmable Wait State Configuration The programmable wait state feature informs the device of the number of clock cycles that must elapse after AVD# is driven active before data will be available. This value is determined by the input frequency of the device. Address bits A14–A12 determine the setting (see Table 8). The wait state command sequence instructs the device to set a particular number of clock cycles for the initial access in burst mode. The number of wait states that should be programmed into the device is directly related to the clock frequency. Set Burst Mode Configuration Register Command Sequence The device uses a burst mode configuration register to set the various burst parameters: number of wait states, burst read mode, active clock edge, RDY configuration, and synchronous mode active. The burst mode configuration register must be set before the device will enter burst mode. The burst mode configuration register is loaded with a three-cycle command sequence. The first two cycles are standard unlock sequences. On the third cycle, the data should be C0h, address bits A11–A0 should be November 1, 2002 Am42BDS640AG 23 PRELIMINARY Table 8. A14 0 0 0 0 1 1 Programmable Wait State Settings A13 0 0 1 1 0 0 A12 0 1 0 1 0 1 Total Initial Access Cycles 2 3 4 5 6 7 The autoselect function allows the host system to determine whether the flash device is enabled for reduced wait-state handshaking. See the “Autoselect Command Sequence” section for more information. Standard Handshaking Operation For optimal burst mode performance on devices with standard handshaking, the host system must set the appropriate number of wait states in the flash device depending on the clock frequency. Table 10 describes the typical number of clock cycles (wait states) for various conditions with A14–A12 set to 101. Table 10. Wait States for Standard Handshaking Typical No. of Clock Cycles after AVD# Low Conditions at Address Initial address is even 40/54 MHz 7 7 7 7 Notes: 1. Upon power-up or hardware reset, the default setting is seven wait states. 2. RDY will default to being active with data when the Wait State Setting is set to a total initial access cycle of 2. 3. Assumes even address. It is recommended that the wait state command sequence be written, even if the default wait state value is desired, to ensure the device is set as expected. A hardware reset will set the wait state to the default setting. Handshaking Option If the device is equipped with reduced wait-state handshaking, the host system should set address bits A14–A12 to 010 for a clock frequency of 40 MHz or to 0 11 fo r a c l o c k fr eq u e n c y o f 5 4 M H z fo r t h e system/device to execute at maximum speed. Table 9 describes the typical number of clock cycles (wait states) for various conditions. Table 9. Initial Access Codes Even Initial Addr. Even Initial Addr. with Boundary* Odd Initial Addr. Odd Initial Addr. with Boundary* Initial address is odd Initial address is even, and is at boundary crossing* Initial address is odd, and is at boundary crossing* * In the 8-, 16- and 32-word burst read modes, the address pointer does not cross 64-word boundaries (addresses which are multiples of 3Fh). Burst Read Mode Configuration The device supports four different burst read modes: continuous mode, and 8, 16, and 32 word linear wrap around modes. A continuous sequence begins at the starting address and advances the address pointer until the burst operation is complete. If the highest address in the device is reached during the continuous burst read mode, the address pointer wraps around to the lowest address. For example, an eight-word linear burst with wrap around begins on the starting burst address written to the device and then proceeds until the next 8 word boundary. The address pointer then returns to the first word of the boundary, wrapping back to the starting location. The sixteen- and thirty-two linear wrap around modes operate in a fashion similar to the eight-word mode. Table 11 shows the address bits and settings for the four burst read modes. System Frequency Range 6–11 MHz 12–23 MHz 24–33 MHz 34–40 MHz 40–47 MHz 48–54 MHz Device Speed Rating 2 2 3 4 4 5 2 3 4 5 5 6 3 4 5 6 6 7 4 5 40 MHz 6 7 7 54 MHz 8 * In the 8-, 16- and 32-word burst read modes, the address pointer does not cross 64-word boundaries (addresses which are multiples of 3Fh). 24 Am42BDS640AG November 1, 2002 PRELIMINARY Table 11. Burst Read Mode Settings Address Bits Burst Modes Continuous 8-word linear wrap around 16-word linear wrap around 32-word linear wrap around A16 0 0 1 1 A15 0 1 0 1 rising edges, barring any delays. The device can be set so that the falling clock edge is active for all synchronous accesses. Address bit A17 determines this setting; “1” for rising active, “0” for falling active. RDY Configuration By default, the device is set so that the RDY pin will output VOH whenever there is valid data on the outputs. The device can be set so that RDY goes active one data cycle before active data. Address bit A18 determines this setting; “1” for RDY active with data, “0” for RDY active one clock cycle before valid data. Note: Upon power-up or hardware reset the default setting is continuous. Configuration Register Burst Active Clock Edge Configuration By default, the device will deliver data on the rising edge of the clock after the initial synchronous access time. Subsequent outputs will also be on the following Table 12 shows the address bits that determine the configuration register settings for various device functions. Table 12. Address BIt A19 A18 A17 A16 Burst Read Mode A15 A14 A13 A12 Programmable Wait State Function Set Device Read Mode RDY Clock Burst Mode Configuration Register Settings (Binary) 0 = Synchronous Read (Burst Mode) Enabled 1 = Asynchronous Mode (default) 0 = RDY active one clock cycle before data 1 = RDY active with data (default) 0 = Burst starts and data is output on the falling edge of CLK 1 = Burst starts and data is output on the rising edge of CLK (default) 00 = Continuous (default) 01 = 8-word linear with wrap around 10 = 16-word linear with wrap around 11 = 32-word linear with wrap around 000 = Data is valid on the 2nd active CLK edge after AVD# transition to VIH 001 = Data is valid on the 3rd active CLK edge after AVD# transition to VIH 010 = Data is valid on the 4th active CLK edge after AVD# transition to VIH 011 = Data is valid on the 5th active CLK edge after AVD# transition to VIH 100 = Data is valid on the 6th active CLK edge after AVD# transition to VIH 101 = Data is valid on the 7th active CLK edge after AVD# transition to VIH (default) Note:Device will be in the default state upon power-up or hardware reset. Sector Lock/Unlock Command Sequence The sector lock/unlock command sequence allows the system to determine which sectors are protected from accidental writes. When the device is first powered up, all sectors are locked. To unlock a sector, the system must write the sector lock/unlock command sequence. Two cycles are first written: addresses are don’t care and data is 60h. During the third cycle, the sector address (SLA) and unlock command (60h) is written, while specifying with address A6 whether that sector should be locked (A6 = V IL) or unlocked (A6 = VIH). After the third cycle, the system can continue to lock or unlock additional cycles, or exit the sequence by writing F0h (reset command). Note that the last two outermost boot sectors can be locked by taking the WP# signal to VIL. Reset Command Writing the reset command resets the banks to the read or erase-suspend-read mode. Address bits are don’t cares for this command. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the bank to which November 1, 2002 Am42BDS640AG 25 PRELIMINARY the system was writing to the read mode. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence before programming begins (prior to the third cycle). This resets the bank to which the system was writing to the read mode. If the program command sequence is written to a bank that is in the Erase Suspend mode, writing the reset command returns that bank to the erase-suspend-read mode. Once programming begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to the read mode. If a bank entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns that bank to the erase-suspend-read mode. If DQ5 goes high during a program or erase operation, writing the reset command returns the banks to the read mode (or erase-suspend-read mode if that bank was in Erase Suspend). The reset command is used to exit the sector lock/unlock sequence. Table 13. Description Manufacturer ID Device ID, Word 1 Device ID, Word 2, Top Boot Device ID, Word 2, Bottom Boot Device ID, Word 3 Sector Block Lock/Unlock Handshaking Device IDs Read Data 0001h 227Eh 2204h (1.8 V VIO) 2224h (1.8 V VIO) 2201h 0001 (locked), 0000 (unlocked) 43h (reduced wait-state), 42h (standard) Address (BA) + 00h (BA) + 01h (BA) + 0Eh (BA) + 0Eh (BA) + 0Fh (SA) + 02h (BA) + 03h The system must write the reset command to return to the read mode (or erase-suspend-read mode if the bank was previously in Erase Suspend). Program Command Sequence Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically provides internally generated program pulses and verifies the programmed cell margin. Table 14 shows the address and data requirements for the program command sequence. When the Embedded Program algorithm is complete, that bank then returns to the read mode and addresses are no longer latched. The system can determine the status of the program operation by monitoring DQ7 or DQ6/DQ2. Refer to the “Flash Write Operation Status” section on page 31 section for information on these status bits. Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the program operation. The program command sequence should be reinitiated once that bank has returned to the read mode, to ensure data integrity. Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from “0” back to a “1.” Attempting to do so may cause that bank to set DQ5 = 1, or cause the DQ7 and DQ6 status bit to indicate the operation was successful. However, a succeeding read will show that the data is still “0.” Only erase operations can convert a “0” to a “1.” Autoselect Command Sequence The autoselect command sequence allows the host system to access the manufacturer and device codes, and determine whether or not a sector is protected. Table 14, “Command Definitions,” on page 30 shows the address and data requirements. The autoselect command sequence may be written to an address within a bank that is either in the read or erase-suspend-read mode. The autoselect command may not be written while the device is actively programming or erasing in the other bank. The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle that contains the bank address and the autoselect command. The bank then enters the autoselect mode. No subsequent data will be made available if the autoselect data is read in synchronous mode. The system may read at any address within the same bank any number of times without initiating another autoselect command sequence. The following table describes the address requirements for the various autoselect functions, and the resulting data. BA represents the bank address, and SA represents the sector address. The device ID is read in three cycles. 26 Am42BDS640AG November 1, 2002 PRELIMINARY Unlock Bypass Command Sequence The unlock bypass feature allows the system to primarily program to a bank faster than using the standard program command sequence. The unlock bypass command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. That bank then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is required to program in this mode. The first cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the program address and data. Additional data is programmed in the same manner. This mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total programming time. The host system may also initiate the chip erase and sector erase sequences in the unlock bypass mode. The erase command sequences are four cycles in length instead of six cycles. Table 14, “Command Definitions,” on page 30 shows the requirements for the unlock bypass command sequences. During the unlock bypass mode, only the Unlock Bypass Program, Unlock Bypass Sector Erase, Unlock Bypass Chip Erase, and Unlock Bypass Reset commands are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the bank address and the data 90h. The second cycle need only contain the data 00h. The bank then returns to the read mode. The device offers accelerated program operations through the ACC input. When the system asserts VID on this input, the device automatically enters the Unlock Bypass mode. The system may then write the two-cycle Unlock Bypass program command sequence. The device uses the higher voltage on the ACC input to accelerate the operation. Figure 2 illustrates the algorithm for the program operation. Refer to the Erase/Program Operations table in the AC Characteristics section for parameters, and Figure 21, “Asynchronous Program Operation Timings,” on page 51 for timing diagrams. START Write Erase Command Sequence Data Poll from System Embedded Erase algorithm in progress No Data = FFh? Yes Erasure Completed Notes: 1. See Table 14 for erase command sequence. 2. See the section on DQ3 for information on the sector erase timer. Figure 2. Erase Operation Chip Erase Command Sequence Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. Table 14, “Command Definitions,” on page 30 shows the address and data requirements for the chip erase command sequence. When the Embedded Erase algorithm is complete, that bank returns to the read mode and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7 or DQ6/DQ2. Refer to the “Flash Write Operation Status” section on page 31 section for information on these status bits. November 1, 2002 Am42BDS640AG 27 PRELIMINARY Any commands written during the chip erase operation are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the chip erase command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. The host system may also initiate the chip erase command sequence while the device is in the unlock bypass mode. The command sequence is two cycles cycles in length instead of six cycles. See Table 14 for details on the unlock bypass command sequences. Figure 2 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations table in the AC Characteristics section for parameters and timing diagrams. When the Embedded Erase algorithm is complete, the bank returns to reading array data and addresses are no longer latched. Note that while the Embedded Erase operation is in progress, the system can read data from the non-erasing bank. The system can determine the status of the erase operation by reading DQ7 or DQ6/DQ2 in the erasing bank. Refer to the “Flash Write Operation Status” section on page 31 section for information on these status bits. Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the sector erase command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. The host system may also initiate the sector erase command sequence while the device is in the unlock bypass mode. The command sequence is four cycles cycles in length instead of six cycles. Figure 2 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations table in the AC Characteristics section for parameters and timing diagrams. Sector Erase Command Sequence Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and the sector erase command. Table 14 shows the address and data requirements for the sector erase command sequence. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. After the command sequence is written, a sector erase time-out of no less than 35 µs occurs. During the time-out period, additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles must be less than 50 µs, otherwise erasure may begin. Any sector erase address and command following the exceeded time-out may or may not be accepted. It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is written. Any command other than Sector Erase or Erase Suspend during the time-out period resets that bank to the read mode. The system must rewrite the command sequence and any additional addresses and commands. The system can monitor DQ3 to determine if the sector erase timer has timed out (See “DQ3: Sector Erase Timer” section on page 34.). The time-out begins from the rising edge of the final WE# pulse in the command sequence. Erase Suspend/Erase Resume Commands The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. The bank address is required when writing this command. This command is valid only during the sector erase operation, including the minimum 50 µs time-out period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. When the Erase Suspend command is written during the sector erase operation, the device requires a maximum of 35 µs to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. After the erase operation has been suspended, the bank enters the erase-suspend-read mode. The system can read data from or program data to any sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. Refer to the Write Operation Status section for information on these status bits. 28 Am42BDS640AG November 1, 2002 PRELIMINARY After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read mode. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard program operation. Refer to the “Flash Write Operation Status” section on page 31 section for more information. In the erase-suspend-read mode, the system can also issue the autoselect command sequence. Refer to the “Autoselect Functions” section on page 15 and “Autoselect Command Sequence” section on page 26 sections for details. To resume the sector erase operation, the system must write the Erase Resume command. The bank address of the erase-suspended bank is required when writing this command. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the chip has resumed erasing. START Write Program Command Sequence Embedded Program algorithm in progress Data Poll from System Verify Data? No Yes No Increment Address Last Address? Yes Programming Completed Note: See Table 14 for program command sequence. Figure 3. Program Operation November 1, 2002 Am42BDS640AG 29 PRELIMINARY Command Definitions Table 14. Command Definitions Cycles Bus Cycles (Notes 1–5) First Second Third Addr Data Addr Fourth Data Fifth Addr Data Sixth Addr Data Command Sequence (Notes) Asynchronous Read (6) Reset (7) Autoselect (8) Manufacturer ID Device ID (9) Sector Lock Verify (10) Handshaking Option (11) Addr Data Addr Data RA XXX 555 555 555 555 555 555 XXX XXX XXX BA 555 555 BA BA XXX 555 55 RD F0 AA AA AA AA AA AA A0 80 80 90 AA AA B0 30 60 AA 98 XXX 2AA 60 55 2AA 2AA 2AA 2AA 2AA 2AA PA SA XXX XXX 2AA 2AA 55 55 55 55 55 55 PD 30 10 00 55 55 1 1 4 6 4 4 4 3 2 2 2 2 6 6 1 1 3 3 1 (BA)555 (BA)555 (SA)555 (BA)555 555 555 90 90 90 90 A0 20 (BA)X00 (BA)X01 (SA)X02 (BA)X03 PA 0001 227E 0000/0001 0042/0043 PD (BA) (BA) (Note 9) X0E X0F 2201 Program Unlock Bypass Unlock Bypass Program (12) Unlock Bypass Sector Erase (12) Unlock Bypass Chip Erase (12) Unlock Bypass Reset (13) Chip Erase Sector Erase Erase Suspend (14) Erase Resume (15) Sector Lock/Unlock Set Burst Mode Configuration Register (16) CFI Query (17) 555 555 80 80 555 555 AA AA 2AA 2AA 55 55 555 SA 10 30 SLA (CR)555 60 C0 Legend: X = Don’t care RA = Address of the memory location to be read. RD = Data read from location RA during read operation. PA = Address of the memory location to be programmed. Addresses latch on the rising edge of the AVD# pulse. PD = Data to be programmed at location PA. Data latches on the rising edge of WE# pulse. Notes: 1. See Table 1 for description of bus operations. 2. 3. 4. 5. 6. 7. All values are in hexadecimal. Except for the read cycle and the fourth cycle of the autoselect command sequence, all bus cycles are write cycles. Data bits DQ15–DQ8 are don’t care in command sequences, except for RD and PD. Unless otherwise noted, address bits A21–A12 are don’t cares. No unlock or command cycles required when bank is reading array data. The Reset command is required to return to reading array data (or to the erase-suspend-read mode if previously in Erase Suspend) when a bank is in the autoselect mode, or if DQ5 goes high (while the bank is providing status information) or performing sector lock/unlock. The fourth cycle of the autoselect command sequence is a read cycle. The system must provide the bank address. See the Autoselect Command Sequence section for more information. The data in the fifth cycle is 2204h for top boot, 2224h for bottom boot. SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A21–A14 uniquely select any sector. BA = Address of the bank (A21, A20) that is being switched to autoselect mode, is in bypass mode, or is being erased. SLA = Address of the sector to be locked. Set sector address (SA) and either A6 = 1 for unlocked or A6 = 0 for locked. CR = Configuration Register address bits A19–A12. 10. The data is 0000h for an unlocked sector and 0001h for a locked sector 11. The data is 0043h for reduced wait-state handshaking and 0042h standard handshaking. 12. The Unlock Bypass command sequence is required prior to this command sequence. 13. The Unlock Bypass Reset command is required to return to reading array data when the bank is in the unlock bypass mode. 14. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is valid only during a sector erase operation, and requires the bank address. 15. The Erase Resume command is valid only during the Erase Suspend mode, and requires the bank address. 16. See “Set Burst Mode Configuration Register Command Sequence” for details. 17. Command is valid when device is ready to read array data or when device is in autoselect mode. 8. 9. 30 Am42BDS640AG November 1, 2002 PRELIMINARY FLASH WRITE OPERATION STATUS The device provides several bits to determine the status of a program or erase operation: DQ2, DQ3, DQ5, DQ6, and DQ7. Table 16, “Write Operation Status,” on page 34 and the following subsections describe the function of these bits. DQ7 and DQ6 each offers a method for determining whether a program or erase operation is complete or in progress. invalid. Valid data on DQ7–DQ0 will appear on successive read cycles. Table 16 shows the outputs for Data# Polling on DQ7. Figure 3 shows the Data# Polling algorithm. Figure 27, “Data# Polling Timings (During Embedded Algorithm),” on page 57 in the AC Characteristics section shows the Data# Polling timing diagram. DQ7: Data# Polling The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm is in progress or completed, or whether a bank is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the command sequence. During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then that bank returns to the read mode. During the Embedded Erase algorithm, Data# Polling produces a “0” on DQ7. When the Embedded Erase algorithm is complete, or if the bank enters the Erase Suspend mode, Data# Polling produces a “1” on DQ7. The system must provide an address within any of the sectors selected for erasure to read valid status information on DQ7. After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 µs, then the bank returns to the read mode. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected sector, the status may not be valid. Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously with DQ6–DQ0 while Output Enable (OE#) is asserted low. That is, the device may change from providing status information to valid data on DQ7. Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has completed the program or erase operation and DQ7 has valid data, the data outputs on DQ6–DQ0 may be still START Read DQ7–DQ0 Addr = VA DQ7 = Data? Yes No No DQ5 = 1? Yes Read DQ7–DQ0 Addr = VA DQ7 = Data? Yes No FAIL PASS Notes: 1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being erased. During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Figure 4. Data# Polling Algorithm November 1, 2002 Am42BDS640AG 31 PRELIMINARY RDY: Ready The RDY is a dedicated output that, by default, indicates (when at logic low) the system should wait 1 clock cycle before expecting the next word of data. Using the RDY Configuration Command Sequence, RDY can be set so that a logic low indicates the system should wait 2 clock cycles before expecting valid data. RDY functions only while reading data in burst mode. The following conditions cause the RDY output to be low: during the initial access (in burst mode), and after the boundary that occurs every 64 words beginning with the 64th address, 3Fh. (During Embedded Algorithm),” on page 57 (toggle bit timing diagram), and Table 15, “DQ6 and DQ2 Indications,” on page 33. START Read Byte (DQ7–DQ0) Address = VA Read Byte (DQ7–DQ0) Address = VA DQ6: Toggle Bit I Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address in the same bank, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause DQ6 to toggle. When the operation is complete, DQ6 stops toggling. After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 100 µs, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase-suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 (see the subsection on DQ7: Data# Polling). If a program address falls within a protected sector, DQ6 toggles for approximately 1 ms after the program command sequence is written, then returns to reading array data. DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete. See the following for additional information: Figure 4 (toggle bit flowchart), DQ6: Toggle Bit I (description), Figure 28, “ To g g l e Bit Ti m i n g s No DQ6 = Toggle? Yes No DQ5 = 1? Yes Read Byte Twice (DQ7–DQ0) Adrdess = VA DQ6 = Toggle? No Yes FAIL PASS Note: The system should recheck the toggle bit even if DQ5 = “1” because the toggle bit may stop toggling as DQ5 changes to “1.” See the subsections on DQ6 and DQ2 for more information. Figure 5. Toggle Bit Algorithm DQ2: Toggle Bit II The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit 32 Am42BDS640AG November 1, 2002 PRELIMINARY II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. But DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 15 to compare outputs for DQ2 and DQ6. See the following for additional information: Figure 5, “Toggle Bit Algorithm,” on page 32, See “DQ6: Toggle Bit I” on page 32., Figure 28, “Toggle Bit Timings (During Embedded Algorithm),” on page 57, and Table 15, “DQ6 and DQ2 Indications,” on page 33. Table 15. If device is programming, and the system reads at any address, at an address within a sector selected for erasure, actively erasing, DQ6 and DQ2 Indications then DQ6 toggles, toggles, toggles, does not toggle, returns array data, toggles, and DQ2 does not toggle. also toggles. does not toggle. toggles. returns array data. The system can read from any sector not selected for erasure. is not applicable. at an address within sectors not selected for erasure, at an address within a sector selected for erasure, erase suspended, at an address within sectors not selected for erasure, programming in erase suspend at any address, Reading Toggle Bits DQ6/DQ2 Refer to Figure 4 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on DQ7–DQ0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not completed the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 4). DQ5: Exceeded Timing Limits DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a “1,” indicating that the program or erase cycle was not successfully completed. The device may output a “1” on DQ5 if the system tries to program a “1” to a location that was previously programmed to “0.” Only an erase operation can change a “0” back to a “1.” Under this condition, the device halts the operation, and when the timing limit has been exceeded, DQ5 produces a “1.” Under both these conditions, the system must write the reset command to return to the read mode (or to the erase-suspend-read mode if a bank was previously in the erase-suspend-program mode). 33 November 1, 2002 Am42BDS640AG PRELIMINARY DQ3: Sector Erase Timer After writing a sector erase command sequence, the system may read DQ3 to determine whether or not erasure has begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase command. When the time-out period is complete, DQ3 switches from a “0” to a “1.” If the time between additional sector erase commands from the system can be assumed to be less than 50 µs, the system need not monitor DQ3. See also the Sector Erase Command Sequence section. After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure that the device has accepted the command sequence, and then read DQ3. If DQ3 is “1,” the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored until the erase operation is complete. If DQ3 is “0,” the device will accept additional sector erase commands. To ensure the command has been accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last command might not have been accepted. Table 16 shows the status of DQ3 relative to the other status bits. Table 16. Write Operation Status Status Standard Mode Embedded Program Algorithm Embedded Erase Algorithm Erase Suspended Sector Non-Erase Suspended Sector DQ7 (Note 2) DQ7# 0 1 Data DQ7# DQ6 Toggle Toggle No toggle Data Toggle DQ5 (Note 1) 0 0 0 Data 0 DQ3 N/A 1 N/A Data N/A DQ2 (Note 2) No toggle Toggle Toggle Data N/A Erase Suspend Mode Erase-SuspendRead (Note 4) Erase-Suspend-Program Notes: 1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. Refer to the section on DQ5 for more information. 2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details. 3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm is in progress. The device outputs array data if the system addresses a non-busy bank. 4. The system may read either asynchronously or synchronously (burst) while in erase suspend. RDY will function exactly as in non-erase-suspended mode. 34 Am42BDS640AG November 1, 2002 PRELIMINARY ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C Ambient Temperature with Power Applied . . . . . . . . . . . . . –65°C to +125°C Voltage with Respect to Ground: All Inputs and I/Os except as noted below (Note 1) . . . . . . . –0.5 V to VIO + 0.5 V VCCf/VCCs (Note 1) . . . . . . . . . . . . .–0.5 V to +2.5 V VIO . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to +1.95 V ACC . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to +12.5 V Output Short Circuit Current (Note 3) . . . . . . 100 mA Notes: 1. Minimum DC voltage on input or I/Os is –0.5 V. During voltage transitions, inputs or I/Os may undershoot VSS to –2.0 V for periods of up to 20 ns during voltage transitions inputs might overshoot to VCC +0.5 V for periods up to 20 ns. See Figure 6. Maximum DC voltage on input or I/Os is VCC + 0.5 V. During voltage transitions outputs may overshoot to VCC + 2.0 V for periods up to 20 ns. See Figure 7. 2. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. 3. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. 20 ns 20 ns +0.8 V –0.5 V –2.0 V 20 ns Figure 6. Maximum Negative Overshoot Waveform 20 ns VCC +2.0 V VCC +0.5 V 1.0 V 20 ns 20 ns Figure 7. Maximum Positive Overshoot Waveform OPERATING RANGES Commercial (C) Devices Ambient Temperature (TA) . . . . . . . . . . . 0°C to +70°C Industrial (I) Devices Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C Supply Voltages VCC Supply Voltages . . . . . . . . . . .+1.65 V to +1.95 V VIO Supply Voltages: VIO ≤ VCC . . . . . . . . . . . . . . . . . . . +1.65 V to +1.95 V Operating ranges define those limits between which the functionality of the device is guaranteed. November 1, 2002 Am42BDS640AG 35 PRELIMINARY FLASH DC CHARACTERISTICS CMOS Compatible Parameter Description ILI ILO ICCB IIO1 IIO2 ICC1 ICC2 ICC3 ICC4 ICC5 IACC VIL VIH VOL VOH VID VLKO Input Load Current Output Leakage Current VCC Active Burst Read Current VIO Active Read Current VIO Non-active Output VCC Active Asynchronous Read Current (Note 2) VCC Active Write Current (Note 3) VCC Standby Current (Note 4) VCC Reset Current VCC Active Current (Read While Write) Accelerated Program Current (Note 5) Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage Voltage for Accelerated Program Low VCC Lock-out Voltage Test Conditions (Note 1) VIN = VSS to VCC, VCC = VCCmax VOUT = VSS to VCC, VCC = VCCmax CE# = VIL, OE# = VIL, WE# = VIH VIO = 1.8 V, CE# = VIL, OE# = VIL, WE# = VIH VIO = 1.8 V, OE# = VIH CE# = VIL, OE# = VIH, WE# = VIH 5 MHz 1 MHz 10 15 0.2 12 3.5 15 0.2 0.2 25 VACC VCC –0.5 VIO – 0.2 7 5 Min Typ Max ±1 ±1 20 30 10 16 5 40 10 10 60 15 10 0.2 VIO + 0.2 0.1 VIO – 0.1 11.5 1.0 12.5 1.4 Unit µA µA mA mA µA mA mA mA µA µA mA mA mA V V V V V V CE# = VIL, OE# = VIH, VPP = VIH CE# = RESET# = VCC ± 0.2 V RESET# = VIL, CLK = VIL CE# = VIL, OE# = VIH CE# = VIL, OE# = VIH, VACC = 12.0 ± 0.5 V VIO = 1.8 V VIO = 1.8 V IOL = 100 µA, VCC = VCC min, VIO = VIO min IOH = –100 µA, VCC = VCC min, VIO = VIO min Note: 1. Maximum ICC specifications are tested with VCC = VCCmax. 2. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. 3. ICC active while Embedded Erase or Embedded Program is in progress. 4. Device enters automatic sleep mode when addresses are stable for tACC + 60 ns. Typical sleep mode current is equal to ICC3. 5. Total current during accelerated programming is the sum of VACC and VCC currents. 36 Am42BDS640AG November 1, 2002 PRELIMINARY SRAM DC AND OPERATING CHARACTERISTICS Parameter Symbol ILI ILO ICC Parameter Description Input Leakage Current Output Leakage Current Operating Power Supply Current Test Conditions VIN = VSS to VCC CE1#s = VIH, CE2s = VIL or OE# = VIH or WE# = VIL, VIO= VSS to VCC IIO = 0 mA, CE1#s = VIL, CE2s = WE# = VIH, VIN = VIH or VIL Cycle time = 1 µs, 100% duty, IIO = 0 mA, CE1#s ≤ 0.2 V, CE2 ≥ VCC – 0.2 V, VIN ≤ 0.2 V or VIN ≥ VCC – 0.2 V Cycle time = Min., IIO = 0 mA, 100% duty, CE1#s = VIL, CE2s = VIH, VIN = VIL = or VIH IOL = 0.1 mA IOH = –0.1 mA CE1#s ≥ VCC – 0.2 V, CE2 ≥ VCC – 0.2 V (CE1#s controlled) or CE2 ≤ 0.2 V (CE2s controlled), CIOs = VSS or VCC, Other input = 0 ~ VCC –0.2 (Note 2) 1.4 1.4 Min –1.0 –1.0 Typ Max 1.0 1.0 5 Unit µA µA mA ICC1s Average Operating Current 1 3 mA ICC2s VOL VOH Average Operating Current Output Low Voltage Output High Voltage 8 25 0.2 mA V V ISB1 Standby Current (CMOS) 15 µA VIL VIH Input Low Voltage Input High Voltage 0.4 VCC+0.2 (Note 3) V V Notes: 1. Typical values measured at VCC = 2.0 V, TA = 25°C. Not 100% tested. 2. Undershoot is –1.0 V when pulse width ≤ 20 ns. 3. Overshoot is VCC + 1.0 V when pulse width ≤ 20 ns. 4. Overshoot and undershoot are sampled, not 100% tested. November 1, 2002 Am42BDS640AG 37 PRELIMINARY TEST CONDITIONS Table 17. Test Specifications Test Condition Device Under Test CL Output Load Output Load Capacitance, CL (including jig capacitance) Input Rise and Fall Times Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels All speed options Unit 1 TTL gate 30 5 0.0–VIO VIO/2 VIO/2 pF ns V V V Figure 8. Test Setup KEY TO SWITCHING WAVEFORMS WAVEFORM INPUTS Steady Changing from H to L Changing from L to H Don’t Care, Any Change Permitted Does Not Apply Changing, State Unknown Center Line is High Impedance State (High Z) OUTPUTS 3.0 V 0.0 V Input 1.5 V Measurement Level 1.5 V Output Figure 9. Input Waveforms and Measurement Levels 38 Am42BDS640AG November 1, 2002 PRELIMINARY AC CHARACTERISTICS SRAM CE#s Timing Parameter Test Setup JEDEC — Std tCCR Description CE#s Recover Time — Min 0 ns All Speeds Unit CE#f tCCR CE1#s tCCR tCCR CE2s tCCR Figure 10. Timing Diagram for Alternating Between SRAM and Flash November 1, 2002 Am42BDS640AG 39 PRELIMINARY FLASH AC CHARACTERISTICS Synchronous/Burst Read Parameter JEDEC Standard tIACC Parameter JEDEC Standard tIACC tBACC tACS tACH tBDH tOE tCEZ tOEZ tCES tRDYS tRACC tAAS tAAH tCAS tAVC tAVD tACC Description Latency—(Odd Address in Handshaking mode or Standard Handshaking) Burst Access Time Valid Clock to Output Delay Address Setup Time to CLK (Note 1) Address Hold Time from CLK (Note 1) Data Hold Time from Next Clock Cycle Output Enable to Output Valid Chip Enable to High Z Output Enable to High Z CE# Setup Time to CLK RDY Setup Time to CLK Ready Access Time from CLK Address Setup Time to AVD# (Note 1) Address Hold Time to AVD# (Note 1) CE# Setup Time to AVD# AVD# Low to CLK AVD# Pulse Access Time Max Max Min Min Max Max Max Max Min Min Max Min Min Min Min Min Max 13.5 5 7 0 5 12 70 13.5 10 10 5 5 20 Description Latency (Even Address in Reduced Wait-State Handshaking Mode) Max D8 (54 MHz) 87.5 C8 (40 MHz) 95 Unit ns D8, D9 (54 MHz) 106 13.5 5 7 4 C8, C9 (40 MHz) 120 20 Unit ns ns ns ns ns 20 ns ns ns ns ns ns ns ns ns ns ns ns Note: 1. Addresses are latched on the first of either the active edge of CLK or the rising edge of AVD#. 40 Am42BDS640AG November 1, 2002 PRELIMINARY AC CHARACTERISTICS 7 cycles for initial access shown. tCES CE#f 1 CLK tAVC AVD# tACS A21-A0 Aa tCEZ 2 3 4 5 6 7 tAVD tBDH tBACC Hi-Z tACH DQ15-DQ0 tIACC tACC OE# Hi-Z Da Da + 1 Da + n tOEZ tRACC Hi-Z tOE RDY tRDYS Notes: 1. Figure shows total number of wait states set to seven cycles. The total number of wait states can be programmed from two cycles to seven cycles. 2. If any burst address occurs at a 64-word boundary, one additional clock cycle is inserted, and is indicated by RDY. 3. The device is in synchronous mode. Figure 11. CLK Synchronous Burst Mode Read (rising active CLK) November 1, 2002 Am42BDS640AG 41 PRELIMINARY AC CHARACTERISTICS 4 cycles for initial access shown. tCES CE#f 1 CLK tAVC AVD# tACS A21-A0 Aa tCEZ 2 3 4 5 tAVD tBDH tBACC Hi-Z tACH DQ15-DQ0 tIACC tACC OE# Hi-Z Da Da + 1 Da + n tOEZ tRACC Hi-Z tOE RDY tRDYS Notes: 1. Figure shows total number of wait states set to four cycles. The total number of wait states can be programmed from two cycles to seven cycles. Clock is set for active falling edge. 2. If any burst address occurs at a 64-word boundary, one additional clock cycle is inserted, and is indicated by RDY. 3. The device is in synchronous mode. 4. A17 = 0. Figure 12. CLK Synchronous Burst Mode Read (Falling Active Clock) 42 Am42BDS640AG November 1, 2002 PRELIMINARY AC CHARACTERISTICS 7 cycles for initial access shown. tCAS CE# f 1 CLK tAVC AVD# tAAS A21-A0 Aa tCEZ 2 3 4 5 6 7 tAVD tBDH tBACC Hi-Z tAAH DQ15-DQ0 tIACC tACC OE# Hi-Z Da Da + 1 Da + n tOEZ tRACC Hi-Z tOE RDY tRDYS Notes: 1. Figure shows total number of wait states set to seven cycles. The total number of wait states can be programmed from two cycles to seven cycles. Clock is set for active rising edge. 2. If any burst address occurs at a 64-word boundary, one additional clock cycle is inserted, and is indicated by RDY. 3. The device is in synchronous mode. 4. A17 = 1. Figure 13. Synchronous Burst Mode Read 7 cycles for initial access shown. tCES CE#f 1 CLK tAVDS AVD# tACS A21-A0 Aa 18.5 ns typ. (54 MHz) 2 3 4 5 6 7 tAVD tBDH tBACC tIACC tACC tACH DQ15-DQ0 D6 D7 D0 D1 D5 D6 OE# tOE RDY Hi-Z tRACC tRDYS Note: Figure assumes 7 wait states for initial access, 54 MHz clock, and automatic detect synchronous read. D0–D7 in data waveform indicate the order of data within a given 8-word address range, from lowest to highest. Data will wrap around within the 8 words non-stop unless the RESET# is asserted low, or AVD# latches in another address. Starting address in figure is the 7th address in range (A6). See “Requirements for Synchronous (Burst) Read Operation”. The Set Configuration Register command sequence has been written with A18=1; device will output RDY with valid data. Figure 14. 8-word Linear Burst with Wrap Around November 1, 2002 Am42BDS640AG 43 PRELIMINARY AC CHARACTERISTICS 6 wait cycles for initial access shown. tCES CE#f 1 CLK tAVDS AVD# tACS A21-A0 Aa 25 ns typ. (40 MHz) tCEZ 6 2 3 4 5 tAVD tBDH tBACC Hi-Z tACH DQ15-DQ0 tIACC tACC OE# tOE RDY Hi-Z D0 D1 D2 D3 Da + n tRACC tOEZ Hi-Z tRDYS Note: Figure assumes 6 wait states for initial access, 40 MHz clock, and synchronous read. The Set Configuration Register command sequence has been written with A18=0; device will output RDY one cycle before valid data. Figure 15. Burst with RDY Set One Cycle Before Data 44 Am42BDS640AG November 1, 2002 PRELIMINARY AC CHARACTERISTICS 7 cycles for initial access shown. tCAS CE#f 1 CLK tAVC AVD# tAAS A21-A0 Aa tCEZ 2 3 4 5 6 7 tAVD tBDH tBACC Hi-Z tAAH DQ15-DQ0 tIACC tACC OE# tOE RDY Hi-Z Da Da + 1 Da + n tOEZ tRACC Hi-Z tRDYS Notes: 1. Figure shows total number of wait states set to seven cycles. The total number of wait states can be programmed from two cycles to seven cycles. Clock is set for active rising edge. 2. If any burst address occurs at a 64-word boundary, one additional clock cycle is inserted, and is indicated by RDY. 3. The device is in synchronous mode. 4. This waveform represents a synchronous burst mode, the device will also operate in reduced wait-state handshaking under a CLK synchronous burst mode. Figure 16. Reduced Wait-State Handshaking Burst Mode Read Starting at an Even Address November 1, 2002 Am42BDS640AG 45 PRELIMINARY AC CHARACTERISTICS 7 cycles for initial access shown. tCAS CE#f 1 CLK tAVC AVD# tAAS A21-A0 Aa tCEZ 2 3 4 5 6 7 8 tAVD tBDH tBACC Hi-Z tAAH DQ15-DQ0 tIACC tACC OE# tOE RDY Hi-Z Da Da + 1 Da + n tOEZ tRACC Hi-Z tRDYS Figure 17. Reduced Wait-State Handshaking Burst Mode Read Starting at an Odd Address Notes: 1. Figure shows total number of wait states set to seven cycles. The total number of wait states can be programmed from two cycles to seven cycles. Clock is set for active rising edge. 2. If any burst address occurs at a 64-word boundary, one additional clock cycle is inserted, and is indicated by RDY. 3. The device is in synchronous mode. 4. This waveform represents a synchronous burst mode, the device will also operate in reduced wait-state handshaking under a CLK synchronous burst mode. 46 Am42BDS640AG November 1, 2002 PRELIMINARY AC CHARACTERISTICS Asynchronous Read Parameter JEDEC Standard Description tCE tACC tAVDP tAAVDS tAAVDH tOE tOEH tOEZ tCAS Access Time from CE# Low Asynchronous Access Time (Note 1) AVD# Low Time Address Setup Time to Rising Edge of AVD Address Hold Time from Rising Edge of AVD Output Enable to Output Valid Read Output Enable Hold Time Toggle and Data# Polling Max Max Min Min Min Max Min Min Max Min 10 0 13.5 0 10 10.5 D8, D9 (54 MHz) 70 70 12 5 7 20 C8, C9 (40 MHz) 85 85 Unit ns ns ns ns ns ns ns ns ns ns Output Enable to High Z (Note 2) CE# Setup Time to AVD# Notes: 1. Asynchronous Access Time is from the last of either stable addresses or the falling edge of AVD#. 2. Not 100% tested. CE#f tOE tOEH WE# DQ15-DQ0 tACC A21-A0 tCAS AVD# tAVDP tAAVDS RA tAAVDH tCE Valid RD tOEZ OE# Note: RA = Read Address, RD = Read Data. Figure 18. Asynchronous Mode Read with Latched Addresses November 1, 2002 Am42BDS640AG 47 PRELIMINARY AC CHARACTERISTICS CE#f tOE tOEH WE# DQ15-DQ0 tACC A21-A0 RA tCE Valid RD tOEZ OE# AVD# Note: RA = Read Address, RD = Read Data. Figure 19. Asynchronous Mode Read 48 Am42BDS640AG November 1, 2002 PRELIMINARY AC CHARACTERISTICS Hardware Reset (RESET#) Parameter JEDEC Std tReadyw tReady tRP tRH tRPD Description RESET# Pin Low (During Embedded Algorithms) to Read Mode (See Note) RESET# Pin Low (NOT During Embedded Algorithms) to Read Mode (See Note) RESET# Pulse Width Reset High Time Before Read (See Note) RESET# Low to Standby Mode Max Max Min Min Min All Speed Options 35 500 500 200 20 Unit µs ns ns ns µs Note: Not 100% tested. CE#f, OE# tRH RESET# tRP tReadyw Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms CE#f, OE# tReady RESET# tRP Figure 20. Reset Timings November 1, 2002 Am42BDS640AG 49 PRELIMINARY AC CHARACTERISTICS Erase/Program Operations Parameter JEDEC tAVAV tAVWL tWLAX Standard tWC tAS tAH tACS tACH tDVWH tWHDX tGHWL tWHEH tWLWH tWHWL tWHWH1 tWHWH1 tWHWH2 tDS tDH tGHWL tCAS tCH tWP tWPH tSR/W tWHWH1 tWHWH1 tWHWH2 tVID tVIDS tVCS tCSW1 tCSW2 tCHW tELWL tCS tAVSW tAVHW tAVHC tAVDP Notes: 1. Not 100% tested. 2. In asynchronous timing, addresses are latched on the falling edge of WE#. In synchronous mode, addresses are latched on the first of either the rising edge of AVD# or the active edge of CLK. 3. See the “Flash Erase And Programming Performance” section for more information. 4. Does not include the preprogramming time. Description Write Cycle Time (Note 1) Address Setup Time (Note 2) Address Hold Time (Note 2) Synchronous Asynchronous Synchronous Asynchronous Min Min All Speed Options 80 5 0 7 45 5 7 45 0 0 0 0 50 30 0 8 2.5 0.2 26.8 500 1 50 5 1 1 0 5 5 5 12 Unit ns ns Min Min Min Min Min Min Min Min Min Min Min Typ Typ Typ Min Min Min Min Min Min Min Min Min Min Min ns ns ns ns ns ns ns ns ns ns ns µs µs sec ns µs µs ns ns ns ns ns ns ns ns Address Setup Time to CLK (Note 2) Address Hold Time to CLK (Note 2) Data Setup Time Data Hold Time Read Recovery Time Before Write CE# Setup Time to AVD# CE# Hold Time Write Pulse Width Write Pulse Width High Latency Between Read and Write Operations Programming Operation (Note 3) Accelerated Programming Operation (Note 3) Sector Erase Operation (Notes 3, 4) Chip Erase Operation (Notes 3, 4) VACC Rise and Fall Time VACC Setup Time (During Accelerated Programming) VCC Setup Time Clock Setup Time to WE# (Asynchronous) Clock Setup Time to WE# (Synchronous) Clock Hold Time from WE# CE# Setup Time to WE# AVD# Setup Time to WE# AVD# Hold Time to WE# AVD# Hold Time to CLK AVD# Low Time 50 Am42BDS640AG November 1, 2002 PRELIMINARY AC CHARACTERISTICS Program Command Sequence (last two cycles) (Note 4) tCSW1 VIH Read Status Data CLK VIL tAVSW tAVHW AVD# tAS tAH Addresses 555h PA VA In Progress tAVDP (Note 6) VA Data A0h tDS tDH PD Complete CE#f OE# tWP WE# tCH tWHWH1 tCS tWC tVCS VCC tWPH Notes: 1. PA = Program Address, PD = Program Data, VA = Valid Address for reading status bits. 2. “In progress” and “complete” refer to status of program operation. 3. A21–A12 are don’t care during command sequence unlock cycles. 4. CLK can be either VIL or VIH. 5. The Asynchronous programming operation is independent of the Set Device Read Mode bit in the Burst Mode Configuration Register. 6. AVD# must toggle during command sequence if CLK is at VIH. Figure 21. Asynchronous Program Operation Timings November 1, 2002 Am42BDS640AG 51 PRELIMINARY AC CHARACTERISTICS Program Command Sequence (last two cycles) tCHW (Note 4) Read Status Data VIH CLK VIL tAVSW tAVHW AVD# tAS tAH Addresses 555h PA VA In Progress tAVDP VA Data A0h tDS tDH PD Complete CE#f OE# tWP WE# tCH tWHWH1 tCS tWC tVCS VCC tWPH Notes: 1. PA = Program Address, PD = Program Data, VA = Valid Address for reading status bits. 2. “In progress” and “complete” refer to status of program operation. 3. A21–A12 are don’t care during command sequence unlock cycles. 4. CLK can be either VIL or VIH. 5. The Asynchronous programming operation is independent of the Set Device Read Mode bit in the Burst Mode Configuration Register. 6. AVD# must toggle during command sequence if CLK is at VIH. Figure 22. Alternate Asynchronous Program Operation Timings 52 Am42BDS640AG November 1, 2002 PRELIMINARY AC CHARACTERISTICS Program Command Sequence (last two cycles) Read Status Data CLK tACS tAS tACH AVD# tAH tAVDP Addresses 555h PA VA In Progress VA Data tCAS CE#f A0h PD tDS tDH Complete OE# tAHW tWP tCH WE# tWHWH1 tWC tWPH tVCS VCC Notes: 1. PA = Program Address, PD = Program Data, VA = Valid Address for reading status bits. 2. “In progress” and “complete” refer to status of program operation. 3. A21–A12 are don’t care during command sequence unlock cycles. 4. Addresses are latched on the first of either the rising edge of AVD# or the active edge of CLK. 5. Either CS# or AVD# is required to go from low to high in between programming command sequences. 6. The Synchronous programming operation is independent of the Set Device Read Mode bit in the Burst Mode Configuration Register. 7. CLK must not have an active edge while WE# is at VIL. 8. AVD# must toggle during command sequence unlock cycles. Figure 23. Synchronous Program Operation Timings November 1, 2002 Am42BDS640AG 53 PRELIMINARY AC CHARACTERISTICS Program Command Sequence (last two cycles) tAVCH CLK tACS tAS tACH AVD# tAH Addresses 555h (Note 8) Read Status Data tAVDP PA VA In Progress VA Data tCAS CE#f A0h PD tDS tDH Complete OE# tCSW2 tWP tCH WE# tWHWH1 tWC tWPH tVCS VCC Notes: 1. PA = Program Address, PD = Program Data, VA = Valid Address for reading status bits. 2. “In progress” and “complete” refer to status of program operation. 3. A21–A12 are don’t care during command sequence unlock cycles. 4. Addresses are latched on the first of either the rising edge of AVD# or the active edge of CLK. 5. Either CS# or AVD# is required to go from low to high in between programming command sequences. 6. The Synchronous programming operation is independent of the Set Device Read Mode bit in the Burst Mode Configuration Register. 7. AVD# must toggle during command sequence unlock cycles. 8. tAH = 45 ns. 9. CLK must not have an active edge while WE# is at VIL. Figure 24. Alternate Synchronous Program Operation Timings 54 Am42BDS640AG November 1, 2002 PRELIMINARY AC CHARACTERISTICS Erase Command Sequence (last two cycles) Read Status Data VIH CLK VIL tAVDP AVD# tAS Addresses 2AAh tAH SA 555h for chip erase 10h for chip erase VA In Progress VA Data 55h 30h tDS tDH Complete CE#f OE# tWP WE# tCS tCH tWHWH2 tWPH tWC tVCS VCC Figure 25. Chip/Sector Erase Command Sequence Notes: 1. SA is the sector address for Sector Erase. 2. Address bits A21–A12 are don’t cares during unlock cycles in the command sequence. November 1, 2002 Am42BDS640AG 55 PRELIMINARY AC CHARACTERISTICS CE#f AVD# WE# Addresses Data Don't Care A0h PA Don't Care PD Don't Care OE# ACC VID 1 µs tVIDS tVID VIL or VIH Note: Use setup and hold times from conventional program operation. Figure 26. Accelerated Unlock Bypass Programming Timing 56 Am42BDS640AG November 1, 2002 PRELIMINARY AC CHARACTERISTICS AVD# tCE CE#f tCH OE# tOEH WE# tACC Addresses VA VA tOE tOEZ tCEZ Data Status Data Status Data Notes: 1. Status reads in figure are shown as asynchronous. 2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is complete, and Data# Polling will output true data. 3. AVD# must toggle between data reads. Figure 27. Data# Polling Timings (During Embedded Algorithm) AVD# tCE CE#f tCH OE# tOEH WE# tACC Addresses VA VA tOE tOEZ tCEZ Data Status Data Status Data Notes: 1. Status reads in figure are shown as asynchronous. 2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is complete, the toggle bits will stop toggling. 3. AVD# must toggle between data reads. Figure 28. Toggle Bit Timings (During Embedded Algorithm) November 1, 2002 Am42BDS640AG 57 PRELIMINARY AC CHARACTERISTICS CE#f CLK AVD# Addresses VA VA OE# tIACC tIACC Status Data Status Data Data RDY Notes: 1. The timings are similar to synchronous read timings. 2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is complete, the toggle bits will stop toggling. 3. RDY is active with data (A18 = 0 in the Burst Mode Configuration Register). When A18 = 1 in the Burst Mode Configuration Register, RDY is active one clock cycle before data. 4. AVD# must toggle between data reads. Figure 29. Synchronous Data Polling Timings/Toggle Bit Timings 58 Am42BDS640AG November 1, 2002 PRELIMINARY AC CHARACTERISTICS) Address boundary occurs every 64 words, beginning at address 00003Fh (00007Fh, 0000BFh, etc.). Address 000000h is also a boundary crossing. C60 CLK Address (hex) AVD# 3C (stays high) C61 3D C62 3E C63 3F C63 3F C63 3F C64 40 C65 41 C66 42 C67 43 tRACC RDY (Note 1) tRACC RDY (Note 2) latency latency tRACC tRACC Data D60 D61 D62 D63 D64 D65 D66 D67 Notes: 1. RDY active with data (A18 = 0 in the Burst Mode Configuration Register). 2. RDY active one clock cycle before data (A18 = 1 in the Burst Mode Configuration Register). 3. Cxx indicates the clock that triggers Dxx on the outputs; for example, C60 triggers D60. Figure shows the device not crossing a bank in the process of performing an erase or program. Figure 30. Latency with Boundary Crossing November 1, 2002 Am42BDS640AG 59 PRELIMINARY AC CHARACTERISTICS Address boundary occurs every 64 words, beginning at address 00003Fh (00007Fh, 0000BFh, etc.). Address 000000h is also a boundary crossing C60 CLK Address (hex) AVD# 3C (stays high) C61 3D C62 3E C63 3F C63 3F C63 3F C64 40 tRACC RDY (Note 1) tRACC RDY (Note 2) latency latency tRACC tRACC Data D60 D61 D62 D63 Invalid Read Status OE#, CE#f (stays low) Notes: 1. RDY active with data (A18 = 0 in the Burst Mode Configuration Register). 2. RDY active one clock cycle before data (A18 = 1 in the Burst Mode Configuration Register). 3. Cxx indicates the clock that triggers Dxx on the outputs; for example, C60 triggers D60. Figure shows the device crossing a bank in the process of performing an erase or program. Figure 31. Latency with Boundary Crossing into Program/Erase Bank 60 Am42BDS640AG November 1, 2002 PRELIMINARY AC CHARACTERISTICS Data D0 D1 AVD# Rising edge of next clock cycle following last wait state triggers next burst data total number of clock cycles following AVD# falling edge OE# 1 CLK 0 1 2 3 4 5 6 7 2 3 4 5 number of clock cycles programmed Wait State Decoding Addresses: A14, A13, A12 = “101” ⇒ 5 programmed, 7 total A14, A13, A12 = “100” ⇒ 4 programmed, 6 total A14, A13, A12 = “011” ⇒ 3 programmed, 5 total A14, A13, A12 = “010” ⇒ 2 programmed, 4 total A14, A13, A12 = “001” ⇒ 1 programmed, 3 total A14, A13, A12 = “000” ⇒ 0 programmed, 2 total Note: Figure assumes address D0 is not at an address boundary, active clock edge is rising, and wait state is set to “101”. Figure 32. Example of Wait States Insertion (Standard Handshaking Device) November 1, 2002 Am42BDS640AG 61 PRELIMINARY AC CHARACTERISTICS Last Cycle in Program or Sector Erase Command Sequence Read status (at least two cycles) in same bank and/or array data from other bank Begin another write or program command sequence tWC tRC tRC tWC CE#f OE# tOE tOEH WE# tWPH tWP tDS tDH Data PD/30h RD tGHWL tACC tOEZ tOEH RD AAh tSR/W Addresses PA/SA RA RA 555h tAS AVD# tAH Note: Breakpoints in waveforms indicate that system may alternately read array data from the “non-busy bank” while checking the status of the program or erase operation in the “busy” bank. The system should read status twice to ensure valid information. Figure 33. Back-to-Back Read/Write Cycle Timings 62 Am42BDS640AG November 1, 2002 PRELIMINARY SRAM AC CHARACTERISTICS Read Cycle Parameter Symbol tRC tAA tCO1, tCO2 tOE tBA tLZ1, tLZ2 tBLZ tOLZ tHZ1, tHZ2 tBHZ tOHZ tOH Description Read Cycle Time Address Access Time Chip Enable to Output Output Enable Access Time LB#s, UB#s to Access Time Chip Enable (CE1#s Low and CE2s High) to Low-Z Output UB#, LB# Enable to Low-Z Output Output Enable to Low-Z Output Chip Disable to High-Z Output UB#s, LB#s Disable to High-Z Output Output Disable to High-Z Output Output Data Hold from Address Change Min Max Max Max Max Min Min Min Max Max Max Min D8, D9 C8, C9 (54 MHz) (40 MHz) 70 70 70 35 70 10 10 5 25 25 25 10 85 85 85 40 85 Unit ns ns ns ns ns ns ns ns ns ns ns ns tRC Address tOH Data Out Previous Data Valid tAA Data Valid Note: CE1#s = OE# = VIL, CE2s = WE# = VIH, UB#s and/or LB#s = VIL Figure 34. SRAM Read Cycle—Address Controlled November 1, 2002 Am42BDS640AG 63 PRELIMINARY SRAM AC CHARACTERISTICS tRC Address tAA tCO1 tOH CS#1 CS2 tCO2 tBA tHZ UB#, LB# OE# tLZ tOLZ tBLZ tOE tBHZ tOHZ Data Valid Data Out High-Z Figure 35. Notes: 1. WE# = VIH. SRAM Read Cycle 2. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 3. At any given temperature and voltage condition, tHZ (Max.) is less than tLZ (Min.) both for a given device and from device to device interconnection. 64 Am42BDS640AG November 1, 2002 PRELIMINARY SRAM AC CHARACTERISTICS Write Cycle Parameter Symbol tWC tCw tAS tAW tBW tWP tWR tWHZ tDW tDH tOW Description Write Cycle Time Chip Enable to End of Write Address Setup Time Address Valid to End of Write UB#s, LB#s to End of Write Write Pulse Time Write Recovery Time Write to Output High-Z Max Data to Write Time Overlap Data Hold from Write Time End Write to Output Low-Z Min Min min 20 30 0 5 ns ns ns Min Min Min Min Min Min Min Min 60 60 50 0 0 ns D8, D9 (54 MHz) 70 60 0 70 70 60 C8, C9 (40 MHz) 85 70 Unit ns ns ns ns ns ns ns tWC Address tCW (See Note 2) tAW CS2s UB#s, LB#s tCW (See Note 2) tBW tWP (See Note 5) tAS (See Note 4) (See Note 9) High-Z tWHZ Data Out (See Note 6) tDW Data Valid tWR (See Note 3) CS1#s WE# tDH Data In (See Note 9) High-Z tOW (See Note 7) Notes: 1. WE# controlled. 2. tCW is measured from CE1#s going low to the end of write. 3. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high. 4. tAS is measured from the address valid to the beginning of write. 5. A write occurs during the overlap (tWP) of low CE#1 and low WE#. A write begins when CE1#s goes low and WE# goes low when asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A write ends at the earliest transition when CE1#s goes high and WE# goes high. The tWP is measured from the beginning of write to the end of write. Figure 36. SRAM Write Cycle—WE# Control November 1, 2002 Am42BDS640AG 65 PRELIMINARY SRAM AC CHARACTERISTICS tWC Address tAS (See Note 2) tCW (See Note 3) CE1#s tAW CE2s tBW tWP (See Note 5) WE# tDW Data In (See Note 6) tDH tWR (See Note 4) UB#s, LB#s Data Valid Data Out High-Z High-Z Notes: 1. CE1#s controlled. 2. tCW is measured from CE1#s going low to the end of write. 3. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high. 4. tAS is measured from the address valid to the beginning of write. 5. A write occurs during the overlap (tWP) of low CE#1 and low WE#. A write begins when CE1#s goes low and WE# goes low when asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A write ends at the earliest transition when CE1#s goes high and WE# goes high. The tWP is measured from the beginning of write to the end of write. Figure 37. SRAM Write Cycle—CE1#s Control 66 Am42BDS640AG November 1, 2002 PRELIMINARY SRAM AC CHARACTERISTICS tWC Address tCW (See Note 2) tAW CE2s UB#s, LB#s tCW (See Note 2) tBW tAS (See Note 4) tWP (See Note 5) tDW Data In tDH tWR (See Note 3) CE1#s WE# Data Valid Data Out High-Z High-Z Notes: 1. UB#s and LB#s controlled. 2. tCW is measured from CE1#s going low to the end of write. 3. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high. 4. tAS is measured from the address valid to the beginning of write. 5. A write occurs during the overlap (tWP) of low CE#1 and low WE#. A write begins when CE1#s goes low and WE# goes low when asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A write ends at the earliest transition when CE1#s goes high and WE# goes high. The tWP is measured from the beginning of write to the end of write. Figure 38. SRAM Write Cycle—UB#s and LB#s Control November 1, 2002 Am42BDS640AG 67 PRELIMINARY FLASH ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time (32 Kword or 8 Kword) Chip Erase Time Word Program Time Accelerated Word Program Time Chip Program Time (Note 3) Accelerated Chip Program Time Typ (Note 1) 0.4 54 11.5 4 48 16 210 120 144 48 Max (Note 2) 5 Unit sec sec µs µs sec sec Excludes system level overhead (Note 5) Comments Excludes 00h programming prior to erasure (Note 4) Notes: 1. Typical program and erase times assume the following conditions: 25°C, 2.0 V VCC, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90°C, VCC = 1.8 V, 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 14 for further information on command definitions. 6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles. FLASH LATCHUP CHARACTERISTICS Description Input voltage with respect to VSS on all pins except I/O pins (including OE#, and RESET#) Input voltage with respect to VSS on all I/O pins VCC Current Min –1.0 V –1.0 V –100 mA Max 12.5 V VCC + 1.0 V +100 mA Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time. PACKAGE PIN CAPACITANCE Parameter Symbol CIN COUT CIN2 CIN3 Description Input Capacitance Output Capacitance Control Pin Capacitance WP#/ACC Pin Capacitance Test Setup VIN = 0 VOUT = 0 VIN = 0 VIN = 0 Typ 11 12 14 17 Max 14 16 16 20 Unit pF pF pF pF Note:Test conditions TA = 25°C, f = 1.0 MHz. FLASH DATA RETENTION Parameter Description Minimum Pattern Data Retention Time Test Conditions 150°C 125°C Min 10 20 Unit Years Years 68 Am42BDS640AG November 1, 2002 PRELIMINARY SRAM DATA RETENTION Parameter Symbol VDR IDR tSDR tRDR Parameter Description VCC for Data Retention Data Retention Current Data Retention Set-Up Time Recovery Time Test Setup CS1#s ≥ VCC – 0.2 V (Note 1) VCC = 1.2 V, CE1#s ≥ VCC – 0.2 V (Note 1) See data retention waveforms 0 tRC Min 1.0 1.0 (Note 2) Typ Max 2.2 8 Unit V µA ns ns Notes: 1. CE1#s ≥ VCC – 0.2 V, CE2s ≥ VCC – 0.2 V (CE1#s controlled) or CE2s ≤ 0.2 V (CE2s controlled). 2. Typical values are not 100% tested. VCC 2.7V tSDR Data Retention Mode tRDR 2.2V VDR CE1#s GND CE1#s ≥ VCC - 0.2 V Figure 39. CE1#s Controlled Data Retention Mode Data Retention Mode VCC 2.7 V CE2s tSDR tRDR VDR 0.4 V GND CE2s < 0.2 V Figure 40. CE2s Controlled Data Retention Mode November 1, 2002 Am42BDS640AG 69 PRELIMINARY PHYSICAL DIMENSIONS FSC093—93-Ball Fine-Pitch Grid Array 8 x 11.6 mm A eD 0.15 C (2X) 10 9 8 7 6 5 4 3 2 1 ML KJ HGFEDCB A B 7 SD PIN A1 CORNER D1 D SE 7 E1 E eE INDEX MARK PIN A1 CORNER 10 TOP VIEW A A2 0.15 C (2X) 0.20 C BOTTOM VIEW A1 6 b 93X 0.15 M C A B 0.08 M C SIDE VIEW C 0.08 C NOTES: PACKAGE JEDEC FSC 093 N/A 8.00 mm x 11.60 mm PACKAGE MIN. MAX. NOM. --0.25 1.00 ------11.60 BSC. 8.00 BSC. 8.80 BSC. 7.20 BSC. 12 10 93 0.30 0.35 0.80 BSC 0.80 BSC 0.40 BSC A2,A3,A4,A5,A6,A7,A8,A9 C10,D1,D10,E1,E10,H1,H10 J1,J10,K1,K10 M2,M3,M4,M5,M6,M7,M8,M9 0.40 1.40 --1.10 PROFILE BALL HEIGHT BODY THICKNESS BODY SIZE BODY SIZE MATRIX FOOTPRINT MATRIX FOOTPRINT MATRIX SIZE D DIRECTION MATRIX SIZE E DIRECTION BALL COUNT BALL DIAMETER BALL PITCH BALL PITCH SOLDER BALL PLACEMENT DEPOPULATED SOLDER BALL 9. 8. 6 7 NOTE 1. 2. 3. 4. 5. DIMENSIONING AND TOLERANCING METHODS PER ASME Y14.5M-1994. ALL DIMENSIONS ARE IN MILLIMETERS. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010. e REPRESENTS THE SOLDER BALL GRID PITCH. SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D" DIRECTION. SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E" DIRECTION. n IS THE NUMBER OF POPULTED SOLDER BALL POSITIONS FOR MATRIX SIZE MD X ME. DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW SD OR SE = 0.000. WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, SD OR SE = e/2 "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS. N/A SYMBOL A A1 A2 D E D1 E1 MD ME n Ob eE eD SD/SE 10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK, METALLIZED MARK INDENTION OR OTHER MEANS. 3187\38.14A 70 Am42BDS640AG November 1, 2002 PRELIMINARY REVISION SUMMARY Revision A (May 20, 2002) Initial release. Revision B (November 1, 2002) Global Renamed Non-Handshaking Handshaking. to Standard Renamed Handshaking Enabled to Reduced Wait-state Handshaking. Product Selector Guide Revised with renamed speed options and added Synchronous Access Time with Reduced Wait-state Handshaking. Added Asynchronous Access Time Ordering Information Revised with global changes Revised Valid Combinations with updated ordering information. Trademarks Copyright © 2002 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. November 1, 2002 Am42BDS640AG 71