AMIS-30585

AMIS-30600 LIN Transceiver Data Sheet 1.0 Key Features LIN-Bus Transceiver • LIN compliant to specification rev. 1.3 and rev. 2.0 • I2T high voltage technology • Bus voltage ± 40V • Transmission rate up to 20 kBaud • SOIC-150-8 Package Protection • Thermal shutdown • Indefinite short circuit protection to supply and ground • Load dump protection (45V) Power Saving • Operating voltage = 4.75 to 5.25V • Power down supply current < 50µA EMS Compatibility • Integrated filter and hysteresis for receiver EMI Compatibility • Integrated slope control for transmitter • Slope control dependant from Vbat to enable maximum capacitive-load 2.0 General Description The single-wire transceiver AMIS-30600 is a monolithic integrated circuit in a SOIC-8 package. It works as an interface between the protocol controller and the physical bus. The AMIS-30600 is especially suitable to drive the bus line in LIN systems in automotive and industrial applications. Further it can be used in standard ISO9141 systems. In order to reduce the current consumption the AMIS-30600 offers a stand-by mode. A wake-up caused by a message on the bus pulls the INH-output high until the device is switched to normal operation mode. The transceiver is implemented in I2T100 technology enabling both high-voltage analog circuitry and digital functionality to co-exist on the same chip. The AMIS-30600 provides an ultra-safe solution to today’s automotive in-vehicle networking (IVN) requirements by providing unlimited short circuit protection in the event of a fault condition. 3.0 Ordering Information Table 1: Ordering Code Marketing Name AMIS30600AGA Package SOIC 150 8 150 4 Temp. Range -40°C…125°C AMI Semiconductor – Rev. 2.0, Apr. 2005 www.amis.com 1 AMIS-30600 LIN Transceiver Data Sheet 4.0 Block Diagram VCC 3 Thermal shutdown VBB 7 8 INH EN 2 10 kΩ 1 State & Wake-up Control 30 kΩ RxD COMP 6 Filter VCC LIN AMIS-30600 Slope Control 5 40 kΩ TxD 4 PC20050113.3 GND Figure 1: Block Diagram 5.0 Typical Application 5.1 Application Schematic Master Node VBAT 10 µF VBB INH 7 8 Slave Node VBAT IN 10 µF IN 5V-reg OUT 100 nF 5V-reg OUT 100 nF VCC 3 1 VCC RxD TxD EN 2 VBB INH 7 8 3 VCC 1 VCC RxD TxD EN 2 1 kΩ LIN 1 nF 6 AMIS30600 5 4 2 LIN controller LIN 6 AMIS30600 5 4 2 LIN controller GND GND GND GND GND GND KL30 LIN-BUS KL31 PC20050113.5 Figure 2: Application Diagram AMI Semiconductor – Rev. 2.0, Apr. 2005 www.amis.com 2 AMIS-30600 LIN Transceiver 5.2 Pin Description 5.2.1 Pin Out (top view) Data Sheet RxD EN VCC TxD 1 8 INH VBB LIN GND AMIS30600 2 3 4 7 6 5 PC20041204.3 Figure 3: Pin Configuration 5.2.2 Pin Description Table 2: Pinout Pin Name Description 1 2 3 4 5 6 7 8 RxD EN VCC TxD GND LIN VBB INH Receive data output; low in dominant state Enable input; transceiver in normal operation mode when high 5V supply input Transmit data input; low in dominant state; internal 40 KΩ pull-up Ground LIN bus output/input; low in dominant state; internal 30 KΩ pull-up Battery supply input Inhibit output; to control a voltage regulator; becomes high when wake-up via LIN bus occurs 5.3 Application Information Start Up Power Up Normal Mode EN High Power-up INH High Vcc On EN High Stand-By Mode EN Low EN (Vcc High On) EN Low INH High Vcc On Sleep Mode EN Low Wake-up t > twake INH Floating Vcc Off PC20050113.1 Figure 4: State Diagram AMI Semiconductor – Rev. 2.0, Apr. 2005 www.amis.com 3 AMIS-30600 LIN Transceiver Data Sheet For fail safe reasons the AMIS-30600 already has an internal pull up resistor of 30kΩ implemented. To achieve the required timings for the dominant to recessive transition of the bus signal an additional external termination resistor of 1kΩ is required. It is recommended to place this resistor in the master node. To avoid reverse currents from the bus line into the battery supply line in case of an unpowered node, it is recommended to place a diode in series to the external pull up. For small systems (low bus capacitance) the EMC performance of the system is supported by an additional capacitor of at least 1nF in the master node (see Figure 2, Typical Application Diagram). The AMIS-30600 has a slope which depends of the supply Vbat. This implementation guarantees biggest slope-time under all load conditions. The rising slope has to be slower then the external RC-time-constant, otherwise the slope will be terminated by the RCtime-constant and no longer by the internal slope-control. This would effect the symmetry of the bus-signal and would limit the maximum allowed bus-speed. A capacitor of 10µF at the supply voltage input VB buffers the input voltage. In combination with the required reverse polarity diode this prevents the device from detecting power down conditions in case of negative transients on the supply line. In order to reduce the current consumption, the AMIS-30600 offers a sleep operation mode. This mode is selected by switching the enable input EN low (see Figure 4, State Diagram). In the sleep mode a voltage regulator can be controlled via the INH output in order to minimize the current consumption of the whole application. A wake-up caused by a message on the communication bus automatically enables the voltage regulator by switching the INH output high. In case the voltage regulator control input is not connected to INH output or the micro-controller is active respectively, the AMIS-30600 can be set in normal operation mode without a wake-up via the communication bus. 6.0 Electrical Characteristics 6.1 Absolute Maximum Ratings Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit. Table 4: Absolute Maximum Ratings Symbol Parameter VCC VBB VLIN VINH VTxD VRxD VEN Vesd(LIN) Vesd Vtran(LIN) Vtran(VBB) Tamb Notes: 1. 2. 3. 4. Conditions Min. Max. Unit Supply voltage Battery supply voltage DC voltage at pin LIN DC voltage at pin INH DC voltage at pin TxD DC voltage at pin RxD DC voltage at pin EN Electrostatic discharge voltage at LIN pin Electrostatic discharge voltage at all other pins Transient voltage at pin LIN Transient voltage at pin VBB Ambient temperature 0 < VCC < 5.50V; note 1 0 < VCC < 5.50V 0 < VCC < 5.50V 0 < VCC < 5.50V 0 < VCC < 5.50V Note 2 Note 2 Note 3 Note 4 -0.3 -0.3 -40 -0.3 -0.3 -0.3 -0.3 -4 -4 -150 -150 -40 +7 +40 +40 VBB + 0.3 VCC + 0.3 VCC + 0.3 VCC + 0.3 +4 +4 +150 +150 +150 V V V V V V V kV kV V V °C 80V version available, contact sales for details. Standardized human body model system ESD pulses in accordance to IEC 1000.4.2. Applied transient waveforms in accordance with “ISO 7637 parts 1 & 3” capacitive coupled test pulses 1 (-100V), 2 (+100V), 3a (-150V), and 3b (+150V). See Figure 8. Applied transient waveforms in accordance with “ISO 7637 parts 1 & 3” direct coupled test pulses 1 (-100V), 2 (+75V), 3a (-150V), 3b (+150V), and 5 (+80V). See Figure 8. AMI Semiconductor – Rev. 2.0, Apr. 2005 www.amis.com 4 AMIS-30600 LIN Transceiver 6.2 Operating Range Table 5: Operating Range Symbol Parameter VCC VBB Tjunc Tjsd Rthj-a Supply voltage Battery supply voltage Maximum junction temperature Thermal shutdown temperature Thermal resistance junction to ambient Data Sheet Min. Typ. Max. Unit 4.75 7.3 -40 +150 +170 185 +5.25 +18 +150 +190 V V °C °C °C/W 6.3 DC Electrical Characteristics VCC = 4.75 to 5.25V; VBB = 7.3 to 18V; VEN > VEN,on ; Tamb = -40 to +125°C; RL = 500Ω unless specified otherwise. All voltages with respect to ground; positive current flowing into pin; unless otherwise specified. Table 6: DC Characteristics Symbol Parameter Supply (pin VCC and pin VBB) Conditions Min. Typ. Max. Unit µA µA mA µA µA µA ICC IBB IBB ICC VIH VIL RTxD,pu VOH VOL VEN,on VEN,off REN,pd VINH,d IINH,lk Vbus,rec Vbus,dom Ibus,sc Ibus,lk Rbus Vbus,rd Vbus,dr Vq VWAKE 5V supply current Battery supply current Battery supply current 5V supply current High-level input voltage Low-level input voltage Pull-up resistor to Vcc High-level output voltage Low-level output voltage High-level input voltage Low-level input voltage Pull-down resistor to GND High-level voltage drop: VINH,d = VBB - VINH Leakage current Recessive bus voltage at pin LIN Dominant output voltage at pin LIN Bus short circuit current Bus leakage current Bus pull-up resistance Receiver threshold: recessive to dominant Receiver threshold: dominant to recessive Receiver hysteresis Wake-up threshold voltage Dominant; VTxD =0V Recessive; VTxD =VCC Dominant; VTxD =0V Recessive; VTxD =VCC Sleep mode; VINH = 0V Sleep mode; VINH = 0V Output recessive Output dominant 0.7 x VCC 0 24 IRXD = -10mA IRXD = 5mA Normal mode Low power mode 0.8 x VCC 0 0.7 x VCC 0 6 IINH = - 0.15mA Sleep mode; VINH = 0V VTxD =VCC VTxD = 0V VTxD = 0V; Ibus = 40mA Vbus,short = 18V VCC=VBB=0V; Vbus=8V VCC=VBB=0V; Vbus=20V VTxD = 0V -5.0 0.9 x VBB 0 40 -400 20 0.4 x VBB 0.4 x VBB Vbus,hys=Vbus,rec-Vbus,dom 0.05 x VBB 0.4 x VBB 400 250 1 100 35 0.25 - 700 500 1.5 200 55 1 VCC 0.3 x VCC 60 VCC 0.2 x VCC Transmitter Data Input (pin TxD) V V kΩ V V V V kΩ V µA Receiver Data Output (pin RxD) Enable Input (pin EN) 10 0.5 85 -200 5 30 0.48 x VBB 0.52 x VBB 0.04 x VBB VCC 0.3 x VCC 15 1.0 5.0 VBB 0.15 x VBB 1.4 130 20 47 0.6 x VBB 0.6 x VBB 0.175 x VBB 0.6 x VBB Inhibit Output (pin INH) Bus Line (pin LIN) V V V mA µA kΩ V V V V AMI Semiconductor – Rev. 2.0, Apr. 2005 www.amis.com 5 AMIS-30600 LIN Transceiver 6.4 AC Electrical Characteristics VCC = 4.75 to 5.25V; VBB = 7.3 to 18V; VEN > VEN,on ; Tamb = -40 to +125°C; RL = 500Ω unless specified otherwise. Load for slope definitions (typical loads) = [L1] 1nF 1kΩ / [L2] 6.8nF 600Ω / [L3] 10nF 500Ω. Table 7: AC Characteristics According to LIN V1.3 Symbol Parameter Dynamic Transceiver Characteristics According to LIN v1.3 Data Sheet Conditions Min. Typ. Max. Unit t _slope_F t _slope_R t _slope _Sym T_rec_F T_rec_R tWAKE Notes: 1. Slope time falling edge Slope time rising edge Slope time symmetry Propagation delay Bus dominant to RxD = low; note 1 Propagation delay Bus recessive to RxD = high; note 1 Wake-up delay time See Figure 6 See Figure 6 t _slope_F - t _slope_R See Figure 5, 6 See Figure 5, 6 4 4 -8 2 2 24 24 +8 6 6 200 µs µs µs µs µs µs 30 100 Not measured on ATE. VCC = 4.75 to 5.25V; VBB = 7.3 to 18V; VEN > VEN,on ; Tamb = -40 to +125°C; RL = 500Ω unless specified otherwise. Load for slope definitions (typical loads) = [L1] 1nF 1kΩ / [L2] 6.8nF 600Ω / [L3] 10nF 500Ω. Table 8: AC Characteristics According to LIN V2.0 Symbol Parameter Dynamic Receiver Characteristics according to LIN v2.0 Propagation delay bus dominant trx_pdr to RxD = low; note 1 Propagation delay Bus recessive trx_pdf to RxD = high; note 1 trx_sym Symmetry of receiver propagation delay Dynamic Transmitter Characteristics according to LIN v2.0 Conditions Min. Typ. Max. Unit See Figure 7 See Figure 7 trx_pdr - trx_pdf THRec(max)= 0.744 x Vbat; THDom(max)= 0.581 x Vbat; Vbat = 7.0V ... 18V; tBit= 50µs THRec(max)= 0.744 x Vbat; THDom(max)= 0.581 x Vbat; Vbat = 7.0V; tBit= 50µs; tamb = -40°C THRec(min)= 0.284 x Vbat; THDom(min)= 0.422 x Vbat; Vbat = 7.6V ... 18V; tBit= 50µs; -2 - 6 6 +2 µs µs µs D1 Duty cycle 1 = tBus_rec(min)/(2 x tBit); See Figure 7 Duty cycle 1 = tBus_rec(min)/(2 x tBit); See Figure 7 Duty cycle 2 = tBus_rec(max)/(2 x tBit); See Figure 7 0.396 0.5 D1 0.366 0.5 D2 Notes: 1. 0.5 0.581 Not measured on ATE. AMI Semiconductor – Rev. 2.0, Apr. 2005 www.amis.com 6 AMIS-30600 LIN Transceiver Data Sheet Vbat 100 nF 7 VBB 3 +5 V 100 nF RL 4 TxD RxD 1 20 pF AMIS30600 6 LIN Load CL L1 L2 L3 RL 1 kΩ CL 1 nF 3 INH 2 5 600 Ω 6.8 nF 500 Ω 10 nF PC20041207.1 EN GND Figure 5: Test Circuit for Timing Characteristics LIN 50% t RxD T_rec_F 50% T_rec_R 50 % t LIN PC20041206.1 60% 40% PC20041204.1 60% 40% t T_slope_F T_slope_R PC20041206.2 Figure 6: Timing Diagram for AC Characteristics According to LIN 1.3 AMI Semiconductor – Rev. 2.0, Apr. 2005 www.amis.com 7 AMIS-30600 LIN Transceiver Data Sheet TxD tBIT 50% tBIT t LIN THRec(max) THDom(max) THRec(min) THDom(min) tBUS_dom(max) tBUS_rec(min) Thresholds receiver 1 Thresholds receiver 2 t RxD ( receiver 2) 50% trx_pdr trx_pdf tBUS_dom(min) tBUS_rec(max) t PC20041206.3 Figure 7: Timing Diagram for AC Characteristics According to LIN 2.0 +13.5 V 100 nF VCC 100 nF TxD 4 7 3 VBB +5.25 V 1 kΩ Transient Generator AMIS30600 6 LIN 1 nF 1 nF EN 2 1 5 3 INH GND RxD 20 pF PC20050113.2 Figure 8: Test Circuit for Transient Measurements AMI Semiconductor – Rev. 2.0, Apr. 2005 www.amis.com 8 AMIS-30600 LIN Transceiver Data Sheet 7.0 Package Outline SOIC-8: Plastic small outline; 8 leads; body width 150 mil; JEDEC: MS-012. AMIS reference: SOIC150 8 150 G AMI Semiconductor – Rev. 2.0, Apr. 2005 www.amis.com 9 AMIS-30600 LIN Transceiver Data Sheet 8.0 Soldering 8.1 Introduction to Soldering Surface Mount Packages This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in the AMIS “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages. Wave soldering is not always suitable for surface mount ICs, or for printed-circuit boards with high population densities. In these situations reflow soldering is often used. 8.2 Re-flow Soldering Re-flow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printedcircuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. Typical re-flow peak temperatures range from 215 to 250°C. The top-surface temperature of the packages should preferably be kept below 230°C. 8.3 Wave Soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the doublewave soldering method was specifically developed. If wave soldering is used the following conditions must be observed for optimal results: • Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. • For packages with leads on two sides and a pitch (e): o Larger than or equal to 1.27mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; o Smaller than 1.27mm, the footprint longitudinal axis must be parallel to the transport direction of the printedcircuit board. The footprint must incorporate solder thieves at the downstream end. • For packages with leads on four sides, the footprint must be placed at a 45º angle to the transport direction of the printedcircuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is four seconds at 250°C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. 8.4 Manual Soldering Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300°C. When using a dedicated tool, all other leads can be soldered in one operation within two to five seconds between 270 and 320°C. Table 9: Soldering Process Package Soldering Method Wave Reflow(1) BGA, SQFP HLQFP, HSQFP, HSOP, HTSSOP, SMS PLCC (3) , SO, SOJ LQFP, QFP, TQFP SSOP, TSSOP, VSO Not suitable Not suitable (2) Suitable Not recommended (3)(4) Not recommended (5) Suitable Suitable Suitable Suitable Suitable Notes: 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods.” 2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65mm. 5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5mm. AMI Semiconductor – Rev. 2.0, Apr. 2005 www.amis.com 10 AMIS-30600 LIN Transceiver Data Sheet 9.0 Company or Product Inquiries For more information about AMI Semiconductor, our technology and our product, visit our website at: http://www.amis.com North America Tel: +1.208.233.4690 Fax: +1.208.234.6795 Europe Tel: +32 (0) 55.33.22.11 Fax: +32 (0) 55.31.81.12 Devices sold by AMIS are covered by the warranty and patent indemnification provisions appearing in its Terms of Sale only. AMIS makes no warranty, express, statutory, implied or by description, regarding the information set forth herein or regarding the freedom of the described devices from patent infringement. AMIS makes no warranty of merchantability or fitness for any purposes. AMIS reserves the right to discontinue production and change specifications and prices at any time and without notice. AMI Semiconductor's products are intended for use in commercial applications. Applications requiring extended temperature range, unusual environmental requirements, or high reliability applications, such as military, medical life-support or life-sustaining equipment, are specifically not recommended without additional processing by AMIS for such applications. Copyright ©2005 AMI Semiconductor, Inc. AMI Semiconductor – Rev. 2.0, Apr. 2005 www.amis.com 11