A420616V-50U

A420616 Series Preliminary Document Title 1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Revision History Rev. No. 0.0 0.1 0.2 1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE History Initial issue Modify AC, DC data Modify DC data and all parts guarantee self-refresh mode Issue Date June 23, 1999 February 7, 2002 June 10, 2002 Remark Preliminary PRELIMINARY (June, 2002, Version 0.2) AMIC Technology, Inc. A420616 Series Preliminary Features n Organization: 1,048,576 words X 16 bits n Part Identification - A420616 (1K Ref.) n Single 5.0V power supply/built-in VBB generator n Low power consumption - Operating: 120mA (-45 max) - Standby: 1.0mA (TTL), 1.0mA (CMOS) 1.5mA (Self-refresh current) n High speed - 45/50 ns RAS access time - 20/22 ns column address access time - 12/13 ns CAS access time - 18/20 ns EDO Page Mode Cycle Time n Industrial operating temperature range: -40°C to 85°C for -U n Fast Page Mode with Extended Data Out n Separate CAS ( UCAS , LCAS ) for byte selection n 1K Refresh Cycle in 16ms n Read-modify-write, RAS -only, CAS -before- RAS , Hidden refresh capability n TTL-compatible, three-state I/O n JEDEC standard packages - 400mil, 42-pin SOJ - 400mil, 44/50 TSOP type II package 1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE General Description The A420616 is a new generation randomly accessed memory for graphics, organized in a 1,048,576-word by 16-bit configuration. This product can execute Byte Write and Byte Read operation via two CAS pins. The A420616 offers an accelerated Fast Page Mode This allow random access of up to 1024 words within a row at a 56/50 MHz EDO cycle, making the A420616 ideally suited for graphics, digital signal processing and high performance computing systems. Pin Descriptions Symbol Description Address Inputs Data Input/Output Row Address Strobe Column Address Strobe for Lower Byte (I/O0 – I/O7) Column Address Strobe for Upper Byte (I/O8 – I/O15) WE OE VCC VSS NC Write Enable Output Enable 5.0V Power Supply Ground No Connection Pin Configuration nSOJ VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I/O5 I/O6 I/O7 NC NC WE RAS NC NC A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 VSS I/O15 I/O14 I/O13 I/O12 VSS I/O11 I/O10 I/O9 I/O8 NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 VSS n TSOP VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I/O5 I/O6 I/O7 NC NC NC WE RAS NC NC A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 VSS I/O15 I/O14 I/O13 I/O12 VSS I/O11 I/O10 I/O9 I/O8 NC NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 VSS A0 – A9 I/O0 - I/O15 RAS LCAS UCAS cycle with a feature called Extended Data Out (EDO). PRELIMINARY A420616S A420616V (June, 2002, Version 0.2) 1 AMIC Technology, Inc. A420616 Series Selection Guide Symbol tRAC tAA tCAC tOEA tRC tPC Description Maximum RAS Access Time Maximum Column Address Access Time Maximum CAS Access Time Maximum Output Enable ( OE ) Access Time Minimum Read or Write Cycle Time Minimum EDO Cycle Time -45 45 20 12 12 76 18 -50 50 22 13 13 84 20 Unit ns ns ns ns ns ns Functional Description The A420616 reads and writes data by multiplexing an 20bit address into a 10-bit row and 10-bit column address. RAS and CAS are used to strobe the row address and the column address, respectively. The A420616 has two CAS inputs: LCAS controls I/O0I/O7, and UCAS controls I/O8 - I/O15, UCAS and LCAS function in an identical manner to CAS in that either will generate an internal CAS signal. The CAS function and timing are determined by the first CAS ( UCAS or LCAS ) to transition low and by the last to transition high. Byte Read and Byte Write are controlled by using LCAS and UCAS separately. A Read cycle is performed by holding the W E signal high during RAS / CAS operation. A Write cycle is executed by holding the W E signal low during RAS / CAS operation; the input data is latched by the falling edge of W E or CAS , whichever occurs later. The data inputs and outputs are routed through 16 common I/O pins, with RAS , CAS , W E and OE controlling the in direction. EDO Page Mode operation all 1024(1K) columns within a selected row to be randomly accessed at a high data rate. A EDO Page Mode cycle is initiated with a row address latched by RAS followed by a column address latched by CAS . While holding RAS low, CAS can be toggled to strobe changing column addresses, thus achieving shorter cycle times. The A420616 offers an accelerated Fast Page Mode cycle through a feature called Extended Data Out, which keeps the output drivers on during the CAS precharge time (tcp). Since data can be output after CAS goes high, the user is not required to wait for valid data to appear before starting the next access cycle. Data-out will remain valid as long as RAS and OE are low, and W E is high; this is the only characteristic which differentiates Extended Data Out operation from a standard Read or Fast Page Read. A memory cycle is terminated by returning both RAS and CAS high. Memory cell data will retain its correct state by maintaining power and accessing all 1024(1K) combinations of the 10-bit row addresses, regardless of sequence, at least once every 16ms through any RAS cycle (Read, Write) or RAS Refresh cycle ( RAS -only, CBR, or Hidden). The CBR Refresh cycle automatically controls the row addresses by invoking the refresh counter and controller. Power-On The initial application of the VCC supply requires a 200 µs wait followed by a minimum of any eight initialization cycles containing a RAS clock. During Power-On, the VCC current is dependent on the input levels of RAS and CAS . It is recommended that RAS and CAS track with VCC or be held at a valid VIH during Power-On to avoid current surges. PRELIMINARY (June, 2002, Version 0.2) 2 AMIC Technology, Inc. A420616 Series Block Diagram RAS UCAS LCAS WE Vcc Control Clocks VBB Generator Vss Refresh Timer Row Decoder Lower Data in Buffer I/O0 to I/O7 Refresh Counter Memory Array 1,048,576 x 16 Cells Sense Amps & I/O Refresh control Lower Data out Buffer OE Upper Data in Buffer A0~A9 Row Address Buffer Upper Data out Buffer I/O8 to I/O15 A0~A9 Col. Address Buffer Column Decoder Recommended Operating Conditions Symbol VCC VSS VIH VIL Description Power Supply Input High Voltage Input High Voltage Input Low Voltage (Ta = 0°C to +70°C or -40°C to +85°C) Min. 4.5 0.0 2.4 -0.5 Typ. 5.0 0.0 Max. 5.5 0.0 VCC + 1.0 0.8 Unit V V V V Notes 1 1 1 1 PRELIMINARY (June, 2002, Version 0.2) 3 AMIC Technology, Inc. A420616 Series Truth Table Function Standby Read: Word Read: Lower Byte RAS H L L UCAS H L H LCAS H L L WE X H H OE X L L Address X Row/Col. Row/Col. I/Os High-Z Data Out I/O0-7 = Data Out I/O8-15 = High-Z I/O0-7 = High-Z I/O8-15 = Data Out Data In I/O0-7 = Data In I/O8-15 = X I/O0-7 = X I/O8-15 = Data In Data Out → Data In Data Out Data Out Data In Data In Data Out → Data In Data Out → Data In Data Out Data In → High-Z High-Z High-Z High-Z Notes Read: Upper Byte L L H H L Row/Col. Write: Word Write: Lower Byte L L L H L L L L H H Row/Col. Row/Col. Write: Upper Byte L L H L H→L H H L L H→L H→L H L X X H H L→H H→L H→L H H L→H L→H L X X X X Row/Col. Read-Write EDO-Page-Mode Read: Hi-Z -First cycle -Subsequent Cycles EDO-Page-Mode Write -First cycle -Subsequent Cycles EDO-Page-Mode Read-Write -First cycle -Subsequent Cycles Hidden Refresh Read Hidden Refresh Write RAS -Only Refresh CBR Refresh Self Refresh Note: L L L L L L L L→H→L L→H→L L H→L H→L L H→L H→L H→L H→L H→L H→L L L H L L L H→L H→L H→L H→L H→L H→L L L H L L Row/Col. Row/Col. Col. Row/Col. Col. Row/Col. Col. Row/Col. Row/Col. Row X X 1,2 2 2 1 1 1, 2 1, 2 2 1 3 1. Byte Write may be executed with either UCAS or LCAS active. 2. Byte Read may be executed with either UCAS or LCAS active. 3. Only one CAS signal ( UCAS or LCAS ) must be active. PRELIMINARY (June, 2002, Version 0.2) 4 AMIC Technology, Inc. A420616 Series Absolute Maximum Ratings* Input Voltage (Vin) . . . . . . . . . . . . . . . . . . . . –1.0V to +7.0V Output Voltage (Vout) . . . . . . . . . . . . . . . . . –1.0V to +7.0V Power Supply Voltage (VCC) . . . . . . . . . . –1.0V to +7.0V Operating Temperature (TOPR) . . . . . . . . . 0°C to +70°C Storage Temperature (TSTG) . . . . . . . . -55°C to +150°C Soldering Temperature X Time (TSOLDER) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C X 10sec Power Dissipation (PD) . . . . . . . . . . . . . . . . . . . . . . . . . 1W Short Circuit Output Current (Iout) . . . . . . . . . . . . . 50mA Latch-up Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA *Comments Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to this device. These are stress ratings only. Functional operation of this device at these or any other conditions above those indicated in the operational sections of these specification is not implied or intended. Exposure to the absolute maximum rating conditions for extended periods may affect device reliability. DC Electrical Characteristics (VCC = 5.0V ± 10%, VSS = 0V, Ta = 0°C to +70°C or -40°C to +85°C) -45 Symbol IIL Parameter Min. Input Leakage Current -5 Max. +5 Min. -5 Max. +5 µA 0V ≤ Vin ≤ VCC Pins not under Test = 0V DOUT disabled, 0V ≤ Vout ≤ VCC RAS , UCAS , LCAS and Address cycling; tRC = min. RAS = UCAS = LCAS = VIH 1, 2 -50 Unit Test Conditions Notes IOL ICC1 Output Leakage Current Operating Power Supply Current -5 - +5 120 -5 - +5 115 µA mA ICC2 TTL Supply Current Supply Current Average Power Supply Current, RAS Refresh Mode EDO Page Mode Average Power Supply Current - 1.0 - 1.0 mA ICC3 - 120 - 115 mA RAS and Address cycling, UCAS = LCAS = VIH, tRC = min. RAS and address = VIL, UCAS , LCAS and Address cycling; tPC = min. RAS and UCAS or LCAS cycling; tRC = min. RAS = UCAS = LCAS = VCC - 0.2V RAS = CAS ≤VSS+0.2V All other input high levels are VCC-0.2V or input low levels are VSS +0.2V IOUT = -5.0mA IOUT = 4.2mA 1 ICC4 - 120 - 115 mA 1, 2 ICC5 CAS -before- RAS Refresh Power Supply Current - 120 - 115 mA 1 ICC6 CMOS Standby Power Supply Current Self Refresh Mode Current - 1.0 - 1.0 mA ICC7 - 1.5 - 1.5 mA VOH VOL Output Voltage 2.4 - 0.4 2.4 - 0.4 V V PRELIMINARY (June, 2002, Version 0.2) 5 AMIC Technology, Inc. A420616 Series AC Characteristics (VCC = 5.0V ± 10%, VSS = 0V, Ta = 0°C to +70°C or -40°C to +85°C) Test Conditions: Input timing reference level: VIH/VIL=2.4V/0.8V Output reference level: VOH/VOL=2.0V/0.8V Output Load: 2TTL gate + CL (50pF) Assumed tT=2ns Std Symbol -45 Parameter Min. tT 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 tRC tRP tRAS tCAS tRCD tRAD tRSH tCSH tCRP tASR tRAH tCLZ tRAC tCAC tAA tOEA tAR tRCS tRCH Transition Time (Rise and Fall) Random Read or Write Cycle Time RAS Precharge Time RAS Pulse Width CAS Pulse Width RAS to CAS Delay Time RAS to Column Address Delay Time CAS to RAS Hold Time CAS Hold Time CAS to RAS Precharge Time Row Address Setup Time Row Address Hold Time CAS to Output in Low Z Access Time from RAS Access Time from CAS Access Time from Column Address OE Access Time Column Address Hold Time from RAS Read Command Setup Time Read Command Hold Time 1 76 27 45 7 10 8 7 35 5 0 7 3 40 0 0 Max. 50 10K 10K 33 25 45 12 20 12 Min. 1 84 30 50 8 11 9 8 37 5 0 8 3 45 0 0 Max. 50 10K 10K 37 28 50 13 22 13 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 9 8 6,7 6, 13 7, 13 6 7 4, 5 -50 Unit Notes # PRELIMINARY (June, 2002, Version 0.2) 6 AMIC Technology, Inc. A420616 Series AC Characteristics (continued) (VCC = 5.0V ± 10%, VSS = 0V, Ta = 0°C to +70°C or -40°C to +85°C) Test Conditions: Input timing reference level: VIH/VIL=2.4V/0.8V Output reference level: VOH/VOL=2.0V/0.8V Output Load: 2TTL gate + CL (50pF) Assumed tT=2ns Std Symbol -45 Parameter Min. 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 tRRH tRAL tCOH tOFF tASC tCAH tOES tWCS tWCH tWCR tWP tRWL tCWL tDS tDH tDHR tRWC tRWD tCWD Read Command Hold Time Reference to RAS Column Address to RAS Lead Time Output Hold After CAS Low Output Buffer Turn-Off Delay Time Column Address Setup Time Column Address Hold Time OE Low to CAS High Set Up -50 Unit Max. 2 Min. 0 22 3 0 8 10 0 8 45 8 13 8 0 8 45 114 65 28 Max. 3 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 11 11 12 12 11 11 8, 10 9 Notes # 0 20 2 0 7 10 0 7 40 7 12 7 0 7 40 104 59 26 Write Command Setup Time Write Command Hold Time Write Command Hold Time to RAS Write Command Pulse Width Write Command to RAS Lead Time Write Command to CAS Lead Time Data-in setup Time Data-in Hold Time Data-in Hold Time to RAS Read-Modify-Write Cycle Time RAS to W E Delay Time (Read-Modify-Write) CAS to W E Delay Time (Read-Modify-Write) PRELIMINARY (June, 2002, Version 0.2) 7 AMIC Technology, Inc. A420616 Series AC Characteristics (continued) (VCC = 5.0V ± 10%, VSS = 0V, Ta = 0°C to +70°C or -40°C to +85°C) Test Conditions: Input timing reference level: VIH/VIL=2.4V/0.8V Output reference level: VOH/VOL=2.0V/0.8V Output Load: 2TTL gate + CL (50pF) Assumed tT=2ns Std Symbol tAWD -45 Parameter Min. 39 Column Address to W E Delay Time (Read-Modify-Write) 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 tOEH tOEP tPC tCPA tCP tPCM tCRW tRASP tCSR tCHR tRPC tOEZ tRASS tRPS tCHS OE Hold Time from W E OE High Pulse Width Read or Write Cycle Time (EDO Page) Access Time from CAS Precharge (EDO Page) CAS Precharge Time EDO Page Mode RMW Cycle Time EDO Page Mode CAS Pulse Width (RMW) RAS Pulse Width (EDO Page) 7 5 18 7 46 35 45 5 10 10 100 76 -50 21 200K 2 8 5 20 8 50 38 50 5 10 10 100 84 -50 23 200K 3 ns ns ns ns ns ns ns ns ns ns ns ns µs ns ns 3 3 3 8 14 13 34 Max. Min. 37 Max. ns 11 -50 Unit Notes # CAS Setup Time ( CAS -before- RAS ) CAS Hold Time ( CAS -before- RAS ) RAS to CAS Precharge Time Output Buffer Turn-off Delay from OE RAS pulse width ( C -B- R self refresh) RAS precharge time ( C -B- R self refresh) CAS hold time ( C -B- R self refresh) PRELIMINARY (June, 2002, Version 0.2) 8 AMIC Technology, Inc. A420616 Series Notes: 1. ICC1, ICC3, ICC4, and ICC5 depend on cycle rate. 2. ICC1 and ICC4 depend on output loading. Specified values are obtained with the outputs open. 3. An initial pause of 200µs is required after power-up followed by any 8 RAS cycles before proper device operation is achieved. In the case of an internal refresh counter, a minimum of 8 CAS -before- RAS initialization cycles instead of 8 RAS cycles are required. 8 initialization cycles are required after extended periods of bias without clocks. 4. AC Characteristics assume tT = 2ns. All AC parameters are measured with a load equivalent to two TTL loads and 50pF, VIL (min.) ≥ GND and VIH (max.) ≤ VCC. 5. VIH (min.) and VIL (max.) are reference levels for measuring timing of input signals. Transition times are measured between VIH and VIL. 6. Operation within the tRCD (max.) limit insures that tRAC (max.) can be met. tRCD (max.) is specified as a reference point only. If tRCD is greater than the specified tRCD (max.) limit, then access time is controlled exclusively by tCAC. 7. Operation within the tRAD (max.) limit insures that tRAC (max.) can be met. tRAD (max.) is specified as a reference point only. If tRAD is greater than the specified tRAD (max.) limit, then access time is controlled exclusively by tAA. 8. Assumes three state test load (5pF and a 500Ω Thevenin equivalent). 9. Either tRCH or tRRH must be satisfied for a read cycle. 10. tOFF (max.) defines the time at which the output achieves the open circuit condition; it is not referenced to output voltage levels. 11. tWCS, tWCH, tRWD, tCWD and tAWD are not restrictive operating parameters. They are included in the data sheet as electrical characteristics only. If tWCS ≥ tWCS (min.) and tWCH ≥ tWCH (min.), the cycle is an early write cycle and data-out pins will remain open circuit, high impedance, throughout the entire cycle. If tRWD ≥ tRWD (min.) , tCWD ≥ tCWD (min.) and tAWD ≥ tAWD (min.), the cycle is a read-modify-write cycle and the data out will contain data read from the selected cell. If neither of the above conditions is satisfied, the condition of the data out at access time is indeterminate. 12. These parameters are referenced to UCAS and LCAS leading edge in early write cycles and to W E leading edge in read-modify-write cycles. 13. Access time is determined by the longer of tAA or tCAC or tCPA. 14. tASC ≥ tCP to achieve tPC (min.) and tCPA (max.) values. PRELIMINARY (June, 2002, Version 0.2) 9 AMIC Technology, Inc. A420616 Series Word Read Cycle tRC(1) tRAS(3) tRP(2) RAS tCSH(8) tCRP(9) tRCD(5) tRSH(7) tCAS(4) tCRP(9) UCAS LCAS tRAD(6) tASR(10) tRAH(11) tASC(24) tRAL(21) tCAH(25) Address Row Address tAR(17) Column Address tRCH(19) tRRH(20) tRCS(18) WE tOEA(16) OE tCAC(14) tAA(15) tRAC(13) tOFF(23) tOEZ(51) I/O 0 ~ I/O 15 High-Z tCLZ(12) Valid Data-out : High or Low PRELIMINARY (June, 2002, Version 0.2) 10 AMIC Technology, Inc. A420616 Series Word Write Cycle (Early Write) tRC(1) tRAS(3) tRP(2) RAS tCSH(8) tCRP(9) tRCD(5) tRSH(7) tCAS(4) tCRP(9) UCAS LCAS tAR(17) tRAD(6) tASR(10) tRAH(11) tASC(24) tRAL(21) tCAH(25) Address Row Address Column Address tWCR(29) tCWL(32) tRWL(31) tWP(30) WE tWCS(27) tWCH(28) OE tDHR(35) tDS(33) tDH(34) I/O 0 ~ I/O 15 Valid Data-in : High or Low PRELIMINARY (June, 2002, Version 0.2) 11 AMIC Technology, Inc. A420616 Series Word Write Cycle (Late Write) tRC(1) tRAS(3) tRP(2) RAS tCSH(8) tCRP(9) tRCD(5) tRSH(7) tCAS(4) tCRP(9) UCAS LCAS tAR(17) tRAD(6) tASR(10) tRAH(11) tASC(24) tRAL(21) tCAH(25) Address Row Address Column Address tCWL(32) tRWL(31) tWCR(29) tWP(30) WE tOEH(40) OE tDHR(35) tDS(33) tDH(34) I/O 0 ~ I/O 15 High-Z Vaild Data-in : High or Low PRELIMINARY (June, 2002, Version 0.2) 12 AMIC Technology, Inc. A420616 Series Word Read-Modify-Write Cycle tRWC(36) tRAS(3) tRP(2) RAS tCSH(8) tCRP(9) tRCD(5) tRSH(7) tCRP(9) UCAS LCAS tAR(17) tRAD(6) tASR(10) tRAH(11) tASC(24) tCAH(25) Address Row Address Column Address tAWD(39) tRCS(18) tRWD(37) tCWD(38) tCWL(32) tRWL(31) WE tWP(30) tOEA(16) tOEZ(51) OE tCAC(14) tAA(15) tRAC(13) tDS(33) tOEH(40) tDH(34) I/O 0 ~ I/O 15 High-Z Data-out tCLZ(12) Data-in : High or Low PRELIMINARY (June, 2002, Version 0.2) 13 AMIC Technology, Inc. A420616 Series EDO Page Mode Word Read Cycle tRASP(47) tRP(2) RAS tCSH(8) tCRP(9) tRCD(5) tCAS(4) tCP(44) tPC(42) tCAS(4) tRSH(7) tCRP(9) tCAS(4) UCAS LCAS tRAD(6) tRAH(11) tCSH(8) tAR(16) tASR(10) tCAH(25) tASC(24) tRAL(21) tCAH(25) tASC(24) Address Row Column tCAH(25) tRCS(18) Column tRCS(18) tRCH(25) Column tRCS(18) tRCH(19) WE tAA(15) tCPA(43) tOEA(16) tOEA(16) tOES(26) tCAC(14) tCAC(14) tCLZ(12) tCOH(22) tAA(15) tRRH(20) OE tRAC(13) tOEP(41) tCAC(14) tOEZ(51) tOFF(23) tOEZ(51) I/O 0 ~ I/O 15 Data-out Data-out Data-out tCLZ(12) : High or Low PRELIMINARY (June, 2002, Version 0.2) 14 AMIC Technology, Inc. A420616 Series EDO Page Mode Early Word Write Cycle tRASP(47) tRP(2) RAS tCSH(8) tCRP(9) tRCD(5) tCAS(4) tCP(44) tCAS(4) tCP(44) tCAS(4) tPC(42) tRSH(7) tCRP(9) UCAS LCAS tRAL(21) tRAD(6) tASR(10) tRAH(11) tASC(24) tCAH(25) tASC(24) tCAH(25) tASC(24) tCAH(25) Address Row Column tCWL(32) tWCS(27) tWCS(27) tWCH(28) Column tCWL(32) tWCS(27) tWCH(28) Column tCWL(32) tRWL(31) tWCH(28) WE tWP(30) tWP(30) tWP(30) OE tDH(34) tDS(33) tDS(33) tDH(34) tDS(33) tDH(34) I/O 0 ~ I/O 15 Data-in Data-in Data-in : High or Low PRELIMINARY (June, 2002, Version 0.2) 15 AMIC Technology, Inc. A420616 Series EDO Page Mode Word Read-Modify-Write Cycle tRASP(47) tRP(2) RAS tCSH(8) tRCD(5) tCRW(46) tCP(44) tCRW(46) tCP(44) tCRW(46) tPCM(45) tRSH(7) tCRP(9) tCRP(9) UCAS LCAS tRAD(6) tASR(10) tRAH(11) tCAH(25) tASC(24) tCAH(25) tASC(24) tRAL(21) tCAH(25) tASC(24) Address Row Column Column tCWL(32) Column tCWL(32) tCWL(32) tRWL(31) tRWD(37) tRCS(18) tCWD(38) tCWD(38) tCWD(38) WE tWP(30) tAWD(39) tAWD(39) tWP(30) tAWD(39) tWP(30) tOEA(16) tOEA(16) tOEH(40) tOEA(16) OE tCAC(14) tAA(15) tOEZ(51) tRAC(13) tCPA(43) tAA(15) tOEZ(51) tDH(34) tDS(33) tCPA(43) tAA(15) tOEZ(51) tDH(34) tDS(33) tDH(34) tDS(33) I/O 0 ~ I/O 15 High-Z tCLZ(12) tCLZ(12) tCLZ(12) Data-in Data-out Data-out Data-in Data-out Data-in : High or Low PRELIMINARY (June, 2002, Version 0.2) 16 AMIC Technology, Inc. A420616 Series RAS Only Refresh Cycle tRC(1) tRAS(3) tRP(2) RAS tRPC(50) tCRP(9) UCAS LCAS tASR(10) tRAH(11) Address Row Note: WE, OE = Don't care. : High or Low CAS Before RAS Refresh Cycle tRC(1) tRP(2) tRAS(3) tRP(2) RAS tRPC(50) tCP(44) tCSR(48) tCHR(49) UCAS LCAS I/O 0 ~ I/O 15 tOFF(23) High-Z Note: WE, OE, Address = Don't care. : High or Low PRELIMINARY (June, 2002, Version 0.2) 17 AMIC Technology, Inc. A420616 Series Hidden Refresh Cycle (Word Read) tRC(1) tRAS(3) tRP(2) tRAS(3) tRC(1) tRP(2) RAS tAR(17) tCRP(9) tRCD(5) tRSH(7) tCHR(49) tCRP(9) UCAS LCAS tASR(10) tRAD(6) tRAH(11) tASC(24) tRAL(21) tCAH(25) A0~A8 Row Column tRCS(18) tRRH(20) WE tAA(15) tOEZ(51) tOEA(16) OE tCAC(14) tCLZ(12) tRAC(13) tOFF(23) I/O0 ~ I/O 15 High-Z Valid Data-out : High or Low PRELIMINARY (June, 2002, Version 0.2) 18 AMIC Technology, Inc. A420616 Series Hidden Refresh Cycle (Early Word Write) tRC(1) tRAS(3) tRP(2) tRAS(3) tRC(1) tRP(2) RAS tAR(17) tCRP(9) tRCD(5) tRSH(7) tCHR(49) tCRP(9) UCAS LCAS tRAD(6) tASR(10) tRAH(11) tASC(24) tRAL(21) tCAH(25) Address Row tWCS(27) Column tWCH(28) tWP(30) WE OE tDS(33) tDH(34) I/O 0 ~ I/O 15 Valid Data-in : High or Low PRELIMINARY (June, 2002, Version 0.2) 19 AMIC Technology, Inc. A420616 Series EDO Page Mode Read-Early-Write Cycle (Pseudo Read-Modify-Write) tRASP(47) tRP(2) RAS tCSH(8) tPC(42) tCRP(9) tRCD(5) tCAS(4) tCP(44) tCAS(4) tPC(42) tCP(44) tRSH(7) tCAS(4) tCPR(9) UCAS LCAS tRAL(21) tRAD(6) tASR(10) tRAH(11) tASC(24) tCAH(25) tASC(24) tCAH(25) tASC(24) tCAH(25) Address Row Column Column tRCH(19) Column tRCS(18) tWCS(27) tWCH(28) WE tAA(15) tRAC(13) tCAC(14) tOEA(16) tAA(15) tCAP(43) tCAC(14) tDS(33) tDH(34) OE tCOH(22) I/O 0 ~ I/O 15 Data-out Data-out Data-in : High or Low PRELIMINARY (June, 2002, Version 0.2) 20 AMIC Technology, Inc. A420616 Series Self Refresh Mode tRP(2) tRASS(52) tRPS(53) RAS tRPC(50) tCSR(48) tCHS(54) tCRP(9) UCAS LCAS tCP(44) tASR(10) A0 ~ A9 tOFF(23) ROW COL I/O 0 ~ I/O 15 High-Z Note: WE, OE = Don't care. : High or Low n Self Refresh Mode. a. Entering the Self Refresh Mode: The A420616 Self Refresh Mode is entered by using CAS before RAS cycle and holding RAS and CAS signal “low” longer than 100µs. b. Continuing the Self Refresh Mode: The Self Refresh Mode is continued by holding RAS “low” after entering the Self Refresh Mode. It does not depend on CAS being “high” or “low” after entering the Self Refresh Mode continue the Self Refresh Mode. c. Exiting the Self Refresh Mode: The A420616 exits the Self Refresh Mode when the RAS signal is brought “high”. PRELIMINARY (June, 2002, Version 0.2) 21 AMIC Technology, Inc. A420616 Series Capacitance (f = 1MHz, Ta = Room Temperature, VCC = 5.0V ± 10%) Symbol CIN1 CIN2 Signals A0 – A9 RAS , UCAS , Input Capacitance Parameter Max. 5 7 Unit pF pF Test Conditions Vin = 0V Vin = 0V LCAS , WE , OE CI/O I/O0 - I/O15 I/O Capacitance 7 pF Vin = Vout = 0V Ordering Codes Package RAS Access Time SOJ 42L (400mil) TSOP 44/50L type II (400mil) TSOP 44/50L type II (400mil) 45ns A420616S-45 A420616V-45 A420616V-45U 50ns A420616S-50 A420616V-50 A420616V-50U Refresh Cycle 1K 1K 1K Self-Refresh Yes Yes Yes Note: -U is for industrial operating temperature range. PRELIMINARY (June, 2002, Version 0.2) 22 AMIC Technology, Inc. A420616 Series Package Information SOJ 42L Outline Dimensions unit: inches/mm 42 22 1 21 D C A2 A A1 S Seating Plane b b1 HE E e y D L e1 θ Symbol A A1 A2 b1 b C D E e e1 HE L S y θ Dimensions in inches Min 0.132 0.025 0.105 0.026 0.016 0.007 1.070 0.395 0.360 0.435 0.088 0° Nom 0.138 0.110 0.028 0.018 0.008 1.075 0.400 0.050 0.370 0.440 Max 0.145 0.115 0.032 0.020 0.011 1.080 0.405 0.380 0.455 0.043 0.004 10° Dimensions in mm Min 3.35 0.64 2.67 0.66 0.41 0.18 27.18 10.03 9.14 11.05 2.24 0° Nom 3.51 2.79 0.71 0.46 0.20 27.31 10.16 1.27 9.40 11.18 Max 3.68 2.92 0.81 0.51 0.28 27.43 10.29 9.65 11.30 1.09 0.10 10° 2Notes: 1. The maximum value of dimension D includes end flash. 2. Dimension E does not include resin fins. 3. Dimension e1 is for PC Board surface mount pad pitch design reference only. 4. Dimension S includes end flash. PRELIMINARY (June, 2002, Version 0.2) 23 AMIC Technology, Inc. A420616 Series Package Information TSOP 44/50L (Type II) Outline Dimensions unit: inches/mm 50 26 Detail "A" RAD R HE E θ L L1 RAD R1 1 D 25 Detail "A" A2 Seating Plane Dimensions in inches D S B y A1 e A Dimensions in mm Min 0.05 0.95 0.30 0.12 20.82 Nom 1.00 20.95 10.16 BSC 11.76 BSC Max 1.20 0.15 1.05 0.45 0.21 21.08 Symbol A A1 A2 B c D E HE L L1 e R R1 S θ Min 0.002 0.037 0.012 0.005 0.820 Nom 0.039 0.825 0.400 BSC 0.463 BSC Max 0.048 0.006 0.042 0.018 0.008 0.830 0.016 0.020 0.031 REF 0.031 BSC 0.024 0.40 0.50 0.80 REF 0.80 BSC 0.60 0.005 0.005 0° 0.0435 REF - 0.010 5° 0.12 0.12 0° 0.875 BSC - 0.25 5° Notes: 1. The maximum value of dimension D includes end flash. 2. Dimension E does not include resin fins. 3. Dimension S includes end flash. PRELIMINARY (June, 2002, Version 0.2) 24 AMIC Technology, Inc. c