Preliminary
Document Title
A64S06162A
16M(1M x 16bit) Normal mode & Page mode with Deep Power Down Static Random Access Memory
Revision history
Rev. No. 0.0 History Initial issue Issue Date May 24, 2005 Remark Preliminary
(May, 2005, Version 0.0)
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AMIC Technology, Corp.
Preliminary
A64S06162A
MEMORY
16M(1M x 16bit) Normal mode & Page mode with Deep Power Down Static Random Access Memory
DESCRIPTION
The A64S06162A is a 16Mb high speed, low power Static Random Access Memory(SRAM) organized as 1,048,576 words by 16 bits and supports Deep Power Down and Page Mode. The A64S06162A is a Pseudo SRAM based on successfully proven DRAM CELL SRAM which was specifically developed for cost sensitive, low power computing and communication applications such as mobile cellular phone handsets, personal digital assistants and other battery-operated consumer products.
FEATURES
• Standard Asynchronous SRAM Interface with Deep Power Down and Page Mode • Organization : 1M x 16Bit • Power Supply Voltage : 2.7 ~ 3.3 V • Page Size : 4 words • Page Mode Access (tPAA) : 35ns • Data Retention Voltage : 2.4V • Deep Power Down : 5uA • Tri-state Output and TTL Compatible
PRODUCT FAMILY
Product Family A64S06162A
1 2 3
Operating Temperature -40 ~ 85 ℃
4 5 6
Voltage 2.7 ~ 3.3 V
Speed 70
ISB1 (Max) 100uA
IccDR (Max) 100uA
ICC1 (Max) 2.0mA
Mode Page
PIN DESCRIPTION
A B C D E F G H /LB IO8 IO9 VSS VCC IO14 IO15 A18 /OE /UB IO10 IO11 IO12 IO13 A19 A8 A0 A3 A5 A17 VSS A14 A12 A9 A1 A4 A6 A7 A16 A15 A13 A10
FUNCTIONAL BLOCK DIAGRAM
Ref. Cont. DC Generator Circuit Sense Amp.
A2 /CS IO1 IO3 IO4 IO5 /WE A11
/PD Add. Input Buffer IO0 IO2 VCC VSS IO6 IO7 Control Logic NC Add. Input Buffer Column Address IO0 Data I/O Buffer IO7
Row Decoder
Row Address
Write Driver
Memory Array 8192 rows 128 x 16 columns
IO8 IO15
Column Decoder
/CS
/PD
/OE /WE /UB
/LB
Note : E3 pin ( VSS) can be remain as a NC
Name /CS /OE /WE A0∼A19 IO0∼IO15 Function Chip Select Input Output Enable Input Write Enable Input Address Input Data Input / Output Name VCC VSS /UB /LB /PD Function Power Ground Upper Byte (IO8∼15) Lower Byte (IO0∼7) Deep Power Down
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AMIC Technology, Corp.
Preliminary
PRODUCT LIST
Part Name A64S06162A-70U Function 16M, 48-FBGA , 70 ns, 3.0V, -40℃∼85℃
A64S06162A
ABSOLUTE MAXIMUM RATING
Item Voltage on any pin relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Storage temperature Operating Temperature (Extended) Symbol VIN, VOUT VCC PD TSTG TA Ratings -0.2 to VCC+0.3 V -0.2 to 3.6 1.0 -55 to 150 -40 ~ 85 Unit V V W ℃ ℃
Note : Stresses greater than those listed under “ABSOLUTE MAXIMUM RATINGS” may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
/CS X H X L L L L L L L L
/PD L H H H H H H H H H H
/OE X X X H H L L L X X X
/WE X X X H H H H H L L L
/LB X X H L X L H L L H L
/UB X X H X L H L L H L L
I/O 0~7 High-Z High-Z High-Z High-Z High-Z Data Out High-Z Data Out Data In High-Z Data In
I/O 8~15 High-Z High-Z High-Z High-Z High-Z High-Z Data Out Data Out High-Z Data In Data In
MODE Deselected Deselected Deselected Output Disabled Output Disabled Lower Byte Read Upper Byte Read Word Read Lower Byte Write Upper Byte Write Word Write
Power Deep Power Down Standby Standby Active Active Active Active Active Active Active Active
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AMIC Technology, Corp.
Preliminary
RECOMMENDED DC OPERATING CONDITIONS
Parameter Supply Voltage (5) Ground Input High Voltage Input Low Voltage Symbol Vcc Vss VIH VIL Min 2.7 0 0.8*Vcc -0.2 3)
1)
A64S06162A
Typ 3.0 0 -
Max 3.3 0 Vcc+0.2 2) 0.4
Unit V V V V
Note : 1.TA = -40℃ to 85℃, otherwise specified. 2. Overshoot : Vcc + 1.0V in case of pulse width ≤ 20 ns. 3. Undershoot : -1.0V in case of pulse width ≤ 20 ns. 4. Overshoot and undershoot are sampled, not 100% tested. 5. Stable power supply required 100 us before device operation.
CAPACITANCE (TA = 25 ℃, f = 1.0MHz)
Symbol CIN COUT Parameter Input Capacitance Output Capacitance Condition VIN =0V VIO =0V Max. 8 10 Unit pF pF
Note : This parameter is sampled and not 100% tested
DC AND OPERATING CHARACTERISTICS
Parameter Input Leakage Current Output Leakage Current Symbol ILI ILO Icc1 Test Condition VIN = Vss to Vcc /CS = VIH, /UB=/LB= VIH or /OE=VIH or /WE=VIL, VIO=Vss to Vcc Cycle Time = 1 us, 100%duty, IIO=0mA, /CS ≤ 0.2V, VIN ≤ 0.2V or VIN ≥ Vcc-0.2V Cycle time=Min, IIO=0mA, 100% duty /CS = VIL,VIN=VIL or VIH /CS1 = VIL, CS2=VIH,Tpwc = min Page address cycling IOL = 2 mA IOH = -1 mA /CS=VIH, /UB=/LB= VIH, Other inputs = VIH or VIL /CS ≥ Vcc-0.2V, /UB=/LB ≥ Vcc-0.2V (/UB,/LB Controlled) Other inputs = 0 or Vcc /PD ≤ Vss+0.2V 2.2 0.3 100 5 Min -1 -1 Typ Max 1 1 Unit uA uA
2.0
mA
Icc2
20
mA
Iccp Output Low Voltage Output High Voltage Standby Current(TTL) Standby Current(CMOS) VOL VOH ISB ISB1
10 0.4
mA V V mA uA uA
Deep Power Down Current
ISB2
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AMIC Technology, Corp.
Preliminary
A64S06162A
Data Retention Electric Characteristic
TA = -40℃ to 85℃ (Normal), unless otherwise specified Item Voltage for Data Retention Symbol VDR Test Condition /CS=/PD=VIH>Vcc-0.2V or /UB,/LB≥Vcc-0.2V, VIN≥VCC-0.2V or VIN≤VSS + 0.2V Vcc=2.4V, /CS=/PD=VIH>Vcc-0.2V or /UB,/LB≥Vcc-0.2V, VIN≥VCC-0.2V or VIN≤VSS + 0.2V Refer to data retention wave form 0 tRC Min 2.4 Typ.
(1)
Max 3.3
Unit V
Data Retention Current
IccDR
100
uA
Chip Deselect to Data Retention Time Operating Recovery Time (1) Vcc = 2.4V, TA = 25℃
tCDR tR
-
ns ns
Data Retention Wave Form
Data Retention Mode VCC 2.7V VIH VDR /CS ≥ Vcc-0.2V /CS VSS tCDR tR
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AMIC Technology, Corp.
Preliminary
A64S06162A
AC TEST CONDITIONS
TA = -40℃ to 85℃ (Normal), unless otherwise specified PARAMETER Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Level Output Load Value 0.4V to 2.2V 5ns 1.5V CL = 30pF + 1TTL Load
AC TEST LOADS
TTL
CL(1)
Note : (1) Including jig and scope capacitance
POWER UP TIME
At starting, maintain stable power for a minimum 100us with /CS = /PD = high.
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AMIC Technology, Corp.
Preliminary
AC CHARACTERISTICS (Vcc = 2.7 ~ 3.3V, TA = -40 to 85℃)
70ns Parameter List Read Cycle Time Address Set-up Time Address Access Time Chip Select to Output R E A D Output Enable to Valid Output /UB,/LB Access Time Chip select to Low-Z Output /UB, /LB Enable to Low-Z Output Output Enable to Low-Z Output Chip Disable to High-Z Output /UB, /LB Disable to High-Z Output Output Disable to High-Z Output Output Hold from Address Change Page Read Precharge Time Page Read Cycle Time Page Read Address Access Time Write Cycle Time Chip Select to End of Write W R I T E Address Valid to End of Write /UB, /LB Valid to End of Write Write Pulse Width Write Recovery Time Write to Output High-Z Data to Write Time Overlap Data Hold from Write Time End of Write to Output Low-Z Page Write Precharge Time Page Write Cycle Time Page Write Data to Write Time overlap Page Write Data Hold from Write Time Symbol Min tRC tAS tAA tCO tOE tBA tLZ tBLZ tOLZ tHZ tBHZ tOHZ tOH tP tPRC tPAA tWC tCW tAW tBW tWP tWR tWHZ tDW tDH tOW tP tPWC tPDW tPDH 70 60 60 60 50 0 0 40 0 5 10 35 20 0 20 10 10 5 0 0 0 10 10 35 35 25 25 25 70 0 70 70 35 70 Max
A64S06162A
Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
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AMIC Technology, Corp.
Preliminary
A64S06162A
TIMING DIAGRAMS
READ CYCLE (/PD = /WE = VIH)
tRC Address(A2 – A19)
Page Address(A0 – A1) tAA tCO tAS /UB,/LB tLZ(2) tBA tP
/CS
tOE /OE tHZ(1,2) tOHZ(1) DATA OUT
Note (READ CYCLE) : 1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels 2. At any given temperature and voltage condition, tHZ(max.) is less than tLZ(min.) both for a given device and from device to device. 3. /WE is high for the read cycle. 4. Do not access device with cycle timing shorter than tRC for continuous periods > 16us.
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AMIC Technology, Corp.
Preliminary
A64S06162A
PAGE READ CYCLE (/PD = /WE = VIH)
tRC Address (A2-A19) tPRC Page Corresponding (A0-A1) Addresses tAA /CS tAS /UB,/LB tCO tLZ(2) tBA
tPAA
tP(5)
/OE
tOE tHZ(1,2) tOHZ(1)
DATA OUT
Note (PAGE MODE READ CYCLE) : 1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels 2. At any given temperature and voltage condition, tHZ(max.) is less than tLZ(min.) both for a given device and from device to device. 3. /WE is high for the read cycle. 4. Do not access device with cycle timing shorter than tRC for continuous periods > 16us. 5. tP (precharge time) should be guaranteed for new Address. 6. After initial page access is accomplished, the page mode operation provides fast read access speed of random locations within that page
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AMIC Technology, Corp.
Preliminary
WRITE CYCLE 1 (/CS Controlled, /PD = VIH)
tWC ADDR tAS /CS tAW tBW /UB,/LB tWP /WE tDW Data In tDH tP tCW tWR
A64S06162A
High-Z
Data Valid High-Z
High-Z
Data Out
WRITE CYCLE 2 (/UB /LB Controlled, /PD = VIH
tWC ADDR tCW(2) /CS tAW tBW /UB,/LB tAS(3) /WE tDW Data In tDH tWP tP tWR(4)
Data Valid High-Z
Data Out
Notes (WRITE CYCLE) : 1. A write occurs during the overlap of a low /CS and low /WE. A write begins at the latest transition among /CS going low and /WE going low: A write end at the earliest transition among /CS going high and /WE going high. tWP is measured from the beginning of write to the end of write. 2. tCW is measured from the later of /CS going low to the end of write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. tWR is applied in case a write ends as /CS. 5. Do not access device with cycle timing shorter than tRC for continuous periods > 16us.
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AMIC Technology, Corp.
Preliminary
PAGE MODE WRITE CYCLE (/PD = VIH)
A64S06162A
tWC Address(A2 – A19) tPWC Page Address(A0 – A1) tP /CS tCW(3) tAS(1) tBW
/UB,/LB
tWP(1) /WE tDW DATA IN tDH tPDW tPDH tPDW tPDH
DATA OUT
High-Z
Notes (PAGE MODE WRITE CYCLE) : 1. A write occurs during the overlap of a low /CS and low /WE. A write begins at the latest transition among /CS going low in initial page mode . A write end at the earliest transition among /CS going high and Page Address transition. tWP is measured from the beginning of write to the end of write in initial page access. 2. tPWC is measured from Page Address trasition (After initial page access) to Page Address transition or /CS going high. 2. tCW is measured from the later of /CS going low to the end of write in initial page access. 3. tAS is measured from the address valid to the beginning of write. 4. Do not access device with cycle timing shorter than tRC for continuous periods > 16us. 5. tP (precharge time) should be guaranteed for new Page Address. 6. After initial page access is accomplished, the page mode operation provides fast read access speed of random locations within that page
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AMIC Technology, Corp.
Preliminary
A64S06162A
Deep Power Down Mode
100us 1us
/PD
Wake Up Normal Operation Deep Power Down Mode Normal Operation
Mode
/CS
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AMIC Technology, Corp.
Preliminary
A64S06162A
Ordering Information
Part No. Access Time (ns) 70 70 70 70 Operating Current Max. (mA) 20 20 20 20 Power Down Mode Standby Current Max. (µA) 5 5 5 5 Package
A64S06162AG-70 A64S06162AG-70F A64S06162AG-70U A64S06162AG-70UF
48B Mini BGA 48B Pb-Free Mini BGA 48B Mini BGA 48B Pb-Free Mini BGA
•Note : -U is for -40c ~ 85c temperature grade
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AMIC Technology, Corp.
Preliminary
PACKAGE DIMENSION FOR BGA TYPE
48 BALL FINE PITCH 6mm x 8mm BGA(0.75mm ball pitch) Top View Bottom View B B B1
A64S06162A
Unit: millimeters
A1 INDEX MARK
6 B A
5
4
3
2
1
#A1
D C
C1 B/2 A Y
C
C1 / 2
Side View
E2 D
C
0.90/Typ.
Min A B B1 C C1 D E E1 E2 Y 5.90 7.90 0.30 0.20 -
Typical 0.75 6.00 3.75 8.00 5.25 0.35 0.25 -
Max 6.10 8.10 0.40 1.20 0.90 0.30 0.10
0.25/Typ.
E
E1
H
G
F
E
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AMIC Technology, Corp.
C