A67P73361E-7.5F

A67P83181/A67P73361 Series Preliminary Document Title 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAM Revision History Rev. No. 0.0 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAM History Initial issue Issue Date July 13, 2005 Remark Preliminary PRELIMINARY (July, 2005, Version 0.0) AMIC Technology, Corp. A67P83181/A67P73361 Series Preliminary Features Fast access time: 6.5/7.5/8.5 ns (153, 133, 117 MHz) Zero Bus Latency between READ and WRITE cycles allows 100% bus utilization Signal +2.5V ± 5% power supply Individual Byte Write control capability Clock enable ( CEN ) pin to enable clock and suspend operations Clock-controlled and registered address, data and control signals Registered output for pipelined applications Three separate chip enables allow wide range of options for CE control, address pipelining Internally self-timed write cycle Selectable BURST mode (Linear or Interleaved) SLEEP mode (ZZ pin) provided Available in 100 pin LQFP package 256K X 18, 128K X 36 LVTTL, Flow-through ZeBLTM SRAM General Description The AMIC Zero Bus Latency (ZeBLTM) SRAM family employs high-speed, low-power CMOS designs using an advanced CMOS process. The A67P83181, A67P73361 SRAMs integrate a 256K X 18, 128K X 36 SRAM core with advanced synchronous peripheral circuitry and a 2-bit burst counter. These SRAMs are optimized for 100 percent bus utilization without the insertion of any wait cycles during Write-Read alternation. The positive edge triggered single clock input (CLK) controls all synchronous inputs passing through the registers. The synchronous inputs include all address, all data inputs, active low chip enable ( CE ), two additional chip enables for easy depth expansion (CE2, CE2 ), cycle start input (ADV/ LD ), synchronous clock enable ( CEN ), byte write enables ( BW1 , BW2 , BW3 , BW4 ) and read/write (R/ W ). Asynchronous inputs include the output enable ( OE ), clock (CLK), SLEEP mode (ZZ, tied LOW if unused) and burst mode (MODE). Burst Mode can provide either interleaved or linear operation, burst operation can be initiated by synchronous address Advance/Load (ADV/ LD ) pin in Low state. Subsequent burst address can be internally generated by the chip and controlled by the same input pin ADV/ LD in High state. Write cycles are internally self-time and synchronous with the rising edge of the clock input and when R/ W is Low. The feature simplified the write interface. Individual Byte enables allow individual bytes to be written. BW1 controls I/Oa pins; BW2 controls I/Ob pins; BW3 controls I/Oc pins; and BW4 controls I/Od pins. Cycle types can only be defined when an address is loaded. The SRAM operates from a +2.5V power supply, and all inputs and outputs are LVTTL-compatible. The device is ideally suited for high bandwidth utilization systems. PRELIMINARY (July, 2005, Version 0.0) 2 AMIC Technology, Corp. A67P83181/A67P73361 Series Pin Configuration 128KX36 CE A6 A7 OE ADV/ LD BW4 BW3 BW2 BW1 VCC CEN VSS CLK CE2 CE2 R/W NC NC A8 A8 82 CEN CE2 OE ADV/ LD BW2 BW1 VCC VSS CLK CE2 R/W NC NC NC A6 A7 CE NC 256KX18 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 I/Oc8 I/Oc0 I/Oc1 VCCQ VSSQ I/Oc2 I/Oc3 I/Oc4 I/Oc5 VSSQ VCCQ I/Oc6 I/Oc 7 VSS VCC VCC VSS I/Od 0 I/Od 1 VCCQ VSSQ I/Od 2 I/Od 3 I/Od 4 I/Od 5 VSSQ VCCQ I/Od6 I/Od7 I/Od8 NC NC NC VCCQ VSSQ NC NC I/Ob8 I/Ob7 VSSQ VCCQ I/Ob6 I/Ob5 VSS VCC VCC VSS I/Ob4 I/Ob3 VCCQ VSSQ I/Ob 2 I/Ob 1 I/Ob 0 NC VSSQ VCCQ NC NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 100 81 A9 A9 80 79 78 77 76 75 74 73 72 71 70 69 68 A10 NC NC VCCQ VSSQ NC I/Oa0 I/Oa1 I/Oa2 VSSQ VCCQ I/Oa3 I/Oa4 VSS VSS VCC ZZ I/Oa5 I/Oa6 VCCQ VSSQ I/Oa7 I/Oa8 NC NC VSSQ VCCQ NC NC NC I/Ob 8 I/Ob 7 I/Ob6 VCCQ VSSQ I/Ob5 I/Ob4 I/Ob3 I/Ob2 VSSQ VCCQ I/Ob1 I/Ob0 VSS VSS VCC ZZ I/Oa7 I/Oa6 VCCQ VSSQ I/Oa5 I/Oa4 I/Oa3 I/Oa2 VSSQ VCCQ I/Oa1 I/Oa0 I/Oa8 A67P83181E A67P73361E 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 A5 A4 A3 A2 A1 A0 A11 A12 A13 A14 A15 A16 A15 MODE MODE VSS VCC A5 A4 A3 A2 A1 A0 A10 A11 A12 A13 A14 VSS VCC PRELIMINARY (July, 2005, Version 0.0) 3 AMIC Technology, Corp. A16 NC NC NC NC A17 NC NC NC NC A67P83181/A67P73361 Series Block Diagram (128K X 36) ZZ MODE MODE LOGIC ADV/LD CEN CLK CLK LOGIC BURST LOGIC ADDRESS COUNTER CLR A0-A16 ADDRESS REGISTERS WRITE ADDRESS REGISTER 9 BYTEa WRITE DRIVER 9 ADV/LD R/W BW1 BW2 BW3 BW4 WRITE REGISTRY & CONTROL LOGIC BYTEb WRITE DRIVER BYTEc WRITE DRIVER BYTEd WRITE DRIVER 9 9 128KX9X4 MEMORY SENSE AMPS OUTPUT BUFFERS I/O s 9 9 ARRAY 9 9 DATA-IN REGISTERS CE CE2 CE2 CHIP ENABLE LOGIC FLOW-THROUGH ENABLE LOGIC OUTPUT ENABLE LOGIC OE PRELIMINARY (July, 2005, Version 0.0) 4 AMIC Technology, Corp. A67P83181/A67P73361 Series Block Diagram (256K X 18) ZZ MODE MODE LOGIC ADV/LD CEN CLK CLK LOGIC BURST LOGIC ADDRESS COUNTER CLR A0- A17 ADDRESS REGISTERS WRITE ADDRESS REGISTER 9 WRITE REGISTRY & CONTROL LOGIC BYTEa WRITE DRIVER 9 256KX9X2 MEMORY SENSE AMPS OUTPUT BUFFERS I/O S ADV/LD R/W BW1 BW2 9 BYTEb WRITE DRIVER 9 ARRAY DATA-IN REGISTERS CE CE2 CE2 CHIP ENABLE LOGIC FLOWTHROUGH ENABLE LOGIC OUTPUT ENABLE LOGIC OE PRELIMINARY (July, 2005, Version 0.0) 5 AMIC Technology, Corp. A67P83181/A67P73361 Series Pin Description Pin No. LQFP (X18) 37 36 35,34,33,32, 100,99,82,81 44,45,46,47, 48,49,50 80 93 ( BW1) 94 ( BW2 ) Symbol LQFP (X36) 37 36 35,34,33,32, 100,99,82,81 45,46,47,48 49,50 44 93 ( BW1) 94 ( BW2 ) 95 ( BW3 ) 96 ( BW4 ) A0 A1 A2 – A9 A11-A17 A10 BW1 BW2 BW3 BW4 Description Synchronous Address Inputs : These inputs are registered and must meet the setup and hold times around the rising edge of CLK. Pins 84 are reserved as address bits for higher-density 18Mb ZeBL SRAMs, respectively. A0 and A1 are the two lest significant bits (LSB) of the address field and set the internal burst counter if burst is desired. Synchronous Byte Write Enables : These active low inputs allow individual bytes to be written when a WRITE cycle is active and must meet the setup and hold times around the rising edge of CLK. BYTE WRITEs need to be asserted on the same cycle as the address, BWs are associated with addresses and apply to subsequent data. BW1 controls I/Oa pins; BW2 controls I/Ob pins; BW3 controls I/Oc pins; BW4 controls I/Od pins. Clock : This signal registers the address, data, chip enables, byte write enables and burst control inputs on its rising edge. All synchronous inputs must meet setup and hold times around the clock’s rising edge. Synchronous Chip Enable : This active low input is used to enable the device. This input is sampled only when a new external address is loaded (ADV/ LD LOW). Synchronous Chip Enable : This active low input is used to enable the device and is sampled only when a new external address is loaded (ADV/ LD LOW). This input can be used for memory depth expansion. Synchronous Chip Enable : This active high input is used to enable the device and is sampled only when a new external address is loaded (ADV/ LD LOW). This input can be used for memory depth expansion. 89 89 CLK 98 98 CE 92 92 CE2 97 97 CE2 86 86 OE Output Enable : This active low asynchronous input enables the data I/O output drivers. Synchronous Address Advance/Load : When HIGH, this input is used to advance the internal burst counter, controlling burst access after the external address is loaded. When HIGH, R/ W is ignored. A LOW on this pin permits a new address to be loaded at CLK rising edge. Synchronous Clock Enable : This active low input permits CLK to propagate throughout the device. When HIGH, the device ignores the CLK input and effectively internally extends the previous CLK cycle. This input must meet setup and hold times around the rising edge of CLK. 85 85 ADV/ LD 87 87 CEN PRELIMINARY (July, 2005, Version 0.0) 6 AMIC Technology, Corp. A67P83181/A67P73361 Series Pin Description (continued) Pin No. LQFP (X18) 64 Symbol LQFP (X36) 64 ZZ Description Snooze Enable : This active high asynchronous input causes the device to enter a low-power standby mode in which all data in the memory array is retained. When active, all other inputs are ignored. Read/Write : This active input determines the cycle type when ADV/ LD is LOW. This is the only means for determining READs and WRITEs. READ cycles may not be converted into WRITEs (and vice versa) other than by loading a new address. A LOW on this pin permits BYTE WRITE operations and must meet the setup and hold times around the rising edge of CLK. Full bus width WRITEs occur if all byte write enables are LOW. SRAM Data I/O : Byte “a” is I/Oa pins; Byte “b” is I/Ob pins; Byte “c” is I/Oc pins; Byte “d” is I/Od pins. Input data must meet setup and hold times around CLK rising edge. 88 88 R/ W 74, 73, 72, 69, 68 63, 62, 59, 58 24, 23, 22, 19, 18 13, 12, 9, 8 31 52, 53, 56, 57, 58, 59, 62, 63, 51 68, 69, 72, 73, 74, 75, 78, 79, 80 2, 3, 6, 7, 8, 9, 12, 13,1 18, 19, 22, 23, 24, 25, 28, 29, 30 31 I/Oa I/Ob I/Oc I/Od MODE Mode: This input selects the burst sequence. A LOW on this pin selects linear burst. NC or HIGH on this pin selects interleaved burst. Do not alter input state while device is operating. No Connect : These pins can be left floating or connected to GND to minimize thermal impedance. 1, 2, 3, 6, 7, 25, 28, 29, 30, 38, 39, 42,43 51, 52, 53, 56, 57, 75, 78, 79, 95, 96 15, 16, 41, 65, 91 4, 11, 20, 27, 54, 61, 70, 77 14, 17, 40, 66, 90 5,10,21,26, 55,60,71,76 38,39,42,43 NC 15, 16, 41, 65, 91 4, 11, 20, 27, 54, 61, 70, 77 14, 17, 40, 66, 90 5,10,21,26, 55,60,71,76 VCC VCCQ VSS VSSQ Power Supply Isolated Output Buffer Supply Ground : GND. Isolated Output Buffer Ground PRELIMINARY (July, 2005, Version 0.0) 7 AMIC Technology, Corp. A67P83181/A67P73361 Series Truth Table (Notes 5 - 7) Operation Address Used None CE CE2 CE2 ZZ Deselected Cycle, H X X L X X X L L→H High-Z Power-down Deselected Cycle, None X H X L L X X X L L→H High-Z Power-down Deselected Cycle, None X X L L L X X X L L→H High-Z Power-down Continue Deselect None X X X L H X X X L L→H High-Z 1 Cycle READ Cycle External L L H L L H X L L L→H Q (Begin Burst) READ Cycle Next X X X L H X X L L L→H Q 1,7 (Continue Burst) NOP/Dummy READ External L L H L L H X H L L→H High-Z 2 (Begin Burst) Dummy READ Next X X X L H X X H L L→H High-Z 1,2,7 (Continue Burst) WRITE Cycle External L L H L L L L X L L→H D 3 (Begin Burst) WRITE Cycle Next X X X L H X L X L L→H D 1,3,7 (Continue Burst) NOP/WRITE Abort None L L H L L L H X L L→H High-Z 2,3 (Begin Burst) WRITE Abort Next X X X L H X H X L L→H High-Z 1,2,3,7 (Continue Burst) IGNORE Clock Edge Current X X X L X X X X H L→ H 4 (Stall) SLEEP Mode None X X X H X X X X X X High-Z Notes: 1. Continue Burst cycles, whether READ or WRITE, use the same control inputs. The type of cycle performed (READ or WRITE) is chosen in the initial Begin Burst cycle. A Continue Deselect cycle can only be entered if a Deselect cycle is executed first. 2. Dummy READ and WRITE Abort cycles can be considered NOPs because the device performs no operation. A WRITE Abort means a WRITE command is given, but no operation is performed. 3. OE may be wired LOW to minimize the number of control signals to the SRAM. The device will automatically turn off the output drivers during a WRITE cycle. Some users may use OE when the bus turn-on and turn-off times do not meet their requirements. 4. If an Ignore Clock Edge command occurs during a READ operation, the I/O bus will remain active (Low-Z). If it occurs during a WRITE cycle, the bus will remain in High-Z. No WRITE operations will be performed during the Ignored Clock Edge cycle. 5. X means “Don’t Care.” H means logic HIGH. L means logic LOW. BWx = H means all byte write signals ( BW1, BW2 , BW3 and BW4 ) are HIGH. BWx = L means one or more byte write signals are LOW. 6. BW1enables WRITEs to Byte “a” (I/Oa pins); BW2 enables WRITEs to Byte “b” (I/Ob pins); BW3 enables WRITEs to Byte “c” (I/Oc pins); BW4 enables WRITEs to Byte “d” (I/Od pins). 7. The address counter is incremented for all Continue Burst cycles. ADV/ LD L R/ W BWx OE CEN CLK I/O Notes PRELIMINARY (July, 2005, Version 0.0) 8 AMIC Technology, Corp. A67P83181/A67P73361 Series Partial Truth Table for READ/WRITE Commands (X18) Operation READ WRITE Byte “a” WRITE Byte “b” WRITE all bytes WRITE Abort/NOP R/ W H L L L L BW1 BW2 X L H L H X H L L H Note : Using R/ W and BYTE WRITE(s), any one or more bytes may be written. Partial Truth Table for READ/WRITE Commands (X36) Operation READ WRITE Byte “a” WRITE Byte “b” WRITE Byte “c” WRITE Byte “d” WRITE all bytes WRITE Abort/NOP R/ W H L L L L L L BW1 BW2 BW3 BW4 X L H H H L H X H L H H L H X H H L H L H X H H H L L H Note : Using R/ W and BYTE WRITE(s), any one or more bytes may be written. Linear Burst Address Table (MODE = LOW) First Address (External) X . . . X00 X . . . X01 X . . . X10 X . . . X11 Second Address (Internal) X . . . X01 X . . . X10 X . . . X11 X . . . X00 Third Address (Internal) X . . . X10 X . . . X11 X . . . X00 X . . . X01 Fourth Address (Internal) X . . . X11 X . . . X00 X . . . X01 X . . . X10 Interleaved Burst Address Table (MODE = HIGH or NC) First Address (External) X . . . X00 X . . . X01 X . . . X10 X . . . X11 Second Address (Internal) X . . . X01 X . . . X00 X . . . X11 X . . . X10 Third Address (Internal) X . . . X10 X . . . X11 X . . . X00 X . . . X01 Fourth Address (Internal) X . . . X11 X . . . X10 X . . . X01 X . . . X00 PRELIMINARY (July, 2005, Version 0.0) 9 AMIC Technology, Corp. A67P83181/A67P73361 Series Absolute Maximum Ratings* Power Supply Voltage (VCC) . . . . . . . . . . -0.3V to +3.6V Voltage Relative to GND for any Pin Except VCC (Vin, Vout) . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VCC +0.3V Operating Temperature (Topr) . . . . . . . . . . . 0°C to 70°C Storage Temperature (Tbias) . . . . . . . . . . -10°C to 85 °C Storage Temperature (Tstg) . . . . . . . . . . -55°C to 125°C *Comments Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to this device. These are stress ratings only. Functional operation of this device at these or any other conditions above those indicated in the operational sections of this specification is not implied or intended. Exposure to the absolute maximum rating conditions for extended periods may affect device reliability. DC Electrical Characteristics and Operating Conditions (0°C ≤ TA ≤ 70°C, VCC, VCCQ = +2.5V± 5% unless otherwise noted) Symbol VIH VIL ILI ILO Parameter Input High Voltage Input Low Voltage Input Leakage Current Output Leakage Current Conditions Min. 1.7 -0.3 Max. VCC+0.3 0.8 2.0 2.0 Unit V V µA µA Note 1,2 1,2 0V ≤ VIH ≤ VCC Output(s) disabled, 0V ≤ VIN≤ VCC -2.0 -2.0 VOH VOL VCC VCCQ Output High Voltage Output Low Voltage Supply Voltage Isolated Output Buffer Supply IOH = -1.0mA IOL = 1.0mA 2.0 0.4 2.375 2.375 2.625 VCC V V V V 1,3 1,3 1 1,4 Capacitance Symbol CI CO CA Parameter Control Input Capacitance Input/Output Capacitance (I/O) Address Capacitance Conditions TA = 25°C; f = 1MHz VCC = 2.5V Typ. 3 4 3 Max. 4 5 3.5 Unit pF pF pF Note 6 6 6 Note : 1. All voltages referenced to VSS (GND). 2. Overshoot : VIH ≤ +4.6V for t ≤ tKHKH/2 for I ≤ 20mA Undershoot : VIL ≥ -0.7V for t ≤ tKHKH/2 for I ≤ 20mA Power-up : VIH ≤ +2.375V and VCC ≤ 2.375V for t ≤ 200ms 3. The load used for VOH, VOL testing is shown in Figure 2. AC load current is higher than the shown DC values. AC I/O curves are available upon request. 4. VCC and VCCQ can be externally wired together to the same power supply. 5. This parameter is sampled. PRELIMINARY (July, 2005, Version 0.0) 10 AMIC Technology, Corp. A67P83181/A67P73361 Series ICC Operating Condition and Maximum Limits Max. Symbol Parameter -7.5 -8.5 -10.0 Unit Conditions Device selected; All inputs ≤ VIL or ≥ VIH; Cycle time ≥ tKC (MIN); VCC = MAX; Output open Device deselected; VCC = MAX; All inputs ≤ VSS+0.2 or ≥ VCC-0.2; Cycle time ≥ tKC (MIN) Device deselected; VCC = MAX; All inputs ≤VSS+0.2 or ≥ VCC-0.2; All inputs static; CLK frequency=MAX; ZZ ≥ VCC-0.2V Device deselected; VCC = MAX; All inputs ≤ VIL; or ≥ VIH; All inputs static; CLK frequency=0 ZZ ≥ VIH ICC Power Supply Current : Operating TBD TBD TBD mA ISB Standby TBD TBD TBD mA ISB Standby TBD TBD TBD mA ISB2 Standby TBD TBD TBD mA ISB2Z SLEEP Mode TBD TBD TBD mA PRELIMINARY (July, 2005, Version 0.0) 11 AMIC Technology, Corp. A67P83181/A67P73361 Series AC Characteristics (Note 4) (0°C ≤ TA ≤ 70°C, VCC = +2.5V± 5%) Symbol Parameter Min. Clock tKHKH tKF tKHKL tKLKH Clock cycle time Clock frequency Clock HIGH time Clock LOW time 7.5 2.5 2.5 133 -8.5 2.8 2.8 117 10 3.0 3.0 100 ns MHz ns ns -7.5 Max. Min. -8.5 Max. Min. -10.0 Max. Unit Note Output Times tKHQV tKHQX tKHQX1 tKHQZ tGLQV tGLQX tGHQZ Clock to output valid Clock to output invalid Clock to output in Low-Z Clock to output in High-Z OE to output valid OE to output in Low-Z OE to output in High-Z 3.0 2.5 1.5 0 6.5 3.8 3.5 3.5 3.0 2.5 1.5 0 7.5 4.0 3.5 3.5 3.0 2.5 1.5 0 8.5 5.0 4.0 4.0 ns ns ns ns ns ns ns 1,2,3 1,2,3 4 1,2,3 1,2,3 Setup Times tAVKH tEVKH tCVKH tDVKH Address Clock enable ( CEN) Control signals Data-in 1.5 1.5 1.5 1.5 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 ns ns ns ns 5 5 5 5 Hold Times tKHAX tKHEX tKHCX tKHDX Address Clock enable ( CEN) Control signals Data-in 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 ns ns ns ns 5 5 5 5 Notes: 1. This parameter is sampled. 2. Output loading is specified with C1=5pF as in Figure 2. 3. Transition is measured ±200mV from steady state voltage. 4. OE can be considered a “Don’t Care” during WRITE; however, controlling OE can help fine-tune a system for turnaround timing. 5. This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK when ADV/ LD is LOW and chip enabled. All other synchronous inputs meet the setup and hold times with stable logic levels for all rising edges of clock (CLK) when the chip is enabled. Chip enable must be valid at each rising edge of CLK (when ADV/ LD is LOW) to remain enabled. PRELIMINARY (July, 2005, Version 0.0) 12 AMIC Technology, Corp. A67P83181/A67P73361 Series AC Test Conditions Input Pulse Levels Input Rise and Fall Times Input Timing Reference Levels Output Reference Levels Output Load GND to 2. 5V 1.0ns 1.25V 1.25V See Figures 1 and 2 +2.5V Q Q ZO=50Ω 50Ω 1538 Ω 5pF 1667 Ω VT=1.25V Figure 1 Output Load Equivalent Figure 2 Output Load Equivalent PRELIMINARY (July, 2005, Version 0.0) 13 AMIC Technology, Corp. A67P83181/A67P73361 Series SLEEP Mode SLEEP Mode is a low current “Power-down” mode in which the device is deselected and current is reduced to ISB2Z. This duration of SLEEP Mode is dictated by the length of time the ZZ is in a HIGH state. After entering SLEEP Mode, all inputs except ZZ become disabled and all outputs go to High-Z. The ZZ pin is asynchronous, active high input that causes the device to enter SLEEP Mode. When the ZZ pin becomes logic HIGH, ISB2Z is guaranteed after the time tZZI is met. Any operation pending when entering SLEEP Mode is not guaranteed to successfully complete. Therefore, SLEEP Mode (READ or WRITE) must not be initiated until valid pending operations are completed. Similarly, when exiting SLEEP Mode during tRZZ, only a DESELECT or READ cycle should be given while the SRAM is transitioning out of SLEEP Mode. SLEEP Mode Electrical Characteristics (VCC, VCCQ = +2.5V±5%) Symbol ISB2Z tZZ tRZZ tZZI tRZZI Parameter Current during SLEEP Mode ZZ active to input ignored ZZ inactive to input sampled ZZ active to snooze current ZZ inactive to exit snooze current Conditions ZZ ≥ VIH Min. 0 0 0 Max. TBD 2(tKHKH) 2(tKHKH) 2(tKHKH) Unit mA ns ns ns ns Note 1 1 1 1 Note : 1. This parameter is sampled. SLEEP Mode Waveform CLK tZZ tRZZ ZZ tZZI I SUPPLY IISB2Z tRZZI ALL INPUTS (except ZZ) DESELECT or READ Only Output (Q) High-Z : Don't Care PRELIMINARY (July, 2005, Version 0.0) 14 AMIC Technology, Corp. A67P83181/A67P73361 Series READ/WRITE Timing 1 CLK tEVK H 2 tKHKH 3 4 5 6 7 8 9 10 tKHE X tKHKL tKLKH CEN tCVKH CE ADV/ LD R/W tKHCX BWx ADDRESS tAVKH A1 tKHAX tDVKH A2 A3 tKHQV tKHQX1 tKHDX A4 A5 A6 A7 tKHQX Q(A3) tGLQV Q(A4) tGHQZ tGLQX Q(A4+1) tKHQZ D(A5) tKHQX Q(A6) D(A7) I/O D(A1) D(A2) D(A2+1) OE COMMAND BURST WRITE D(A2+1) BURST READ Q(A4+1) WRITE D(A1) WRITE D(A2) READ Q(A3) READ Q(A4) WRITE D(A5) READ Q(A6) : Don't Care WRITE D(A7) DESELECT : Undefined Note : 1. For this waveform, ZZ is tied LOW. 2. Burst sequence order is determined by MODE (0 = linear, 1 = interleaved). BRST operations are optional. 3. CE represents three signals. When CE = 0, it represents CE = 0, CE2 = 0, CE2 = 1. 4. Data coherency is provided for all possible operations. If a READ is initiated the most current data is used. The most recent data may be from the input data register. PRELIMINARY (July, 2005, Version 0.0) 15 AMIC Technology, Corp. A67P83181/A67P73361 Series NOP, STALL and Deselect Cycles 1 CLK 2 3 4 5 6 7 8 9 10 CEN CE ADV/ LD R/W BWx ADDRESS A1 A2 A3 A4 A5 tKHQZ I/O D(A1) Q(A2) Q(A3) D(A4) Q(A5) tKHQX COMMAND WRITE D(A1) READ Q(A2) STALL READ Q(A3) WRITE D(A4) STALL NOP READ Q(A5) : Don't Care DESELECT CONTINUE DESELECT : Undefined Note : 1. The IGNORE CLOCK EDGE or STALL cycle (clock 3) illustrates CEN being used to create a “pause.” A WRITE is not performed during this cycle. 2. For this waveform, ZZ and OE are tied LOW. 3. CE represents three signals. When CE = 0, it represents CE = 0, CE2 = 0, CE2 = 1. 4. Data coherency is provided for all possible operations. If a READ is initiated, the most current data is used. The most recent data may be from the input data register. PRELIMINARY (July, 2005, Version 0.0) 16 AMIC Technology, Corp. A67P83181/A67P73361 Series Ordering Information Part No. A67P83181E-7.5 A67P83181E-7.5F A67P83181E-8.5 256K X 18 A67P83181E-8.5F A67P83181E-10.0 A67P83181E-10.0F A67P73361E-7.5 A67P73361E-7.5F A67P73361E-8.5 128K X 36 A67P73361E-8.5F A67P73361E-10.0 A67P73361E-10.0F 8.5ns / 7.5ns 10ns / 8.5ns 10ns / 8.5ns 100L Pb-Free LQFP 100L LQFP 100L Pb-Free LQFP 8.5ns / 7.5ns 10ns / 8.5ns 10ns / 8.5ns 7.5ns / 6.5ns 7.5ns / 6.5ns 8.5ns / 7.5ns 100L Pb-Free LQFP 100L LQFP 100L Pb-Free LQFP 100L LQFP 100L Pb-Free LQFP 100L LQFP Configure Cycle Time / Access Time 7.5ns / 6.5ns 7.5ns / 6.5ns 8.5ns / 7.5ns Package 100L LQFP 100L Pb-Free LQFP 100L LQFP PRELIMINARY (July, 2005, Version 0.0) 17 AMIC Technology, Corp. A67P83181/A67P73361 Series Package Information LQFP 100L Outline Dimensions unit: inches/mm HE E 80 51 A2 A1 y D 81 50 HD D 100 31 1 30 e b c θ Symbol A1 A2 b c HE E HD D e L L1 y θ Dimensions in inches Min. 0.002 0.053 0.009 0.004 Nom. 0.055 0.012 0.866 BSC 0.787 BSC 0.630 BSC 0.551 BSC 0.026 BSC 0.018 0.024 0.039 REF 0° 3.5° 0.004 7° 0.030 Max. 0.006 0.057 0.015 0.008 Dimensions in mm Min. 0.05 1.35 0.22 0.09 Nom. 1.40 0.30 22.00 BSC 20.00 BSC 16.00 BSC 14.00 BSC 0.65 BSC 0.45 0.60 1.00 REF 0° 3.5° 0.10 7° 0.75 Max. 0.15 1.45 0.38 0.20 Notes: 1. Dimensions D and E do not include mold protrusion. 2. Dimensions b does not include dambar protrusion. Total in excess of the b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. L L1 PRELIMINARY (July, 2005, Version 0.0) 18 AMIC Technology, Corp.