A81L801UG-70I

A81L801 Stacked Multi-chip Package (MCP) 1 M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM Preliminary Document Title Stacked Multi-chip Package (MCP) 1M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM Revision History Rev. 0.0 History Initial issue Issue Date March 25, 2005 Remark Preliminary PRELIMINARY (March, 2005, Version 0.0) AMIC Technology, Corp. A81L801 Stacked Multi-chip Package (MCP) 1 M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Bit Low Voltage CMOS SRAM Preliminary MCP Features Single power supply operation 2.7 to 3.6 volt High Performance - Access time as fast as 70ns Package - 69-Ball FBGA (8x11x1.4 mm) Industrial operating temperature range: -25°C to 85°C for –I Flash Features Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications Access times: - 70 (max.) Current: - 9 mA typical active read current - 20 mA typical program/erase current - 200 nA typical CMOS standby - 200 nA Automatic Sleep Mode current Flexible sector architecture - 16 Kbyte/ 8 KbyteX2/ 32 Kbyte/ 64 KbyteX15 sectors - 8 Kword/ 4 KwordX2/ 16 Kword/ 32 KwordX15 sectors - Any combination of sectors can be erased - Supports full chip erase - Sector protection: A hardware method of protecting sectors to prevent any inadvertent program or erase operations within that sector. Temporary Sector Unprotect feature allows code changes in previously locked sectors Extended operating temperature range: -25°C ~ +85°C for – I series Unlock Bypass Program Command - Reduces overall programming time when issuing multiple program command sequence Top or bottom boot block configurations available Embedded Algorithms - Embedded Erase algorithm will automatically erase the entire chip or any combination of designated sectors and verify the erased sectors - Embedded Program algorithm automatically writes and verifies data at specified addresses Typical 100,000 program/erase cycles per sector 20-year data retention at 125°C - Reliable operation for the life of the system Data Polling and toggle bits - Provides a software method of detecting completion of program or erase operations Ready / BUSY pin (RY / BY ) - Provides a hardware method of detecting completion of program or erase operations Erase Suspend/Erase Resume - Suspends a sector erase operation to read data from, or program data to, a non-erasing sector, then resumes the erase operation Hardware reset pin ( RESET ) - Hardware method to reset the device to reading array data LP SRAM Features Power supply range: 2.7V to 3.6V Access times: 70 ns (max.) Current: Very low power version: Operating: 30mA(max.) Standby: 5uA (max.) Full static operation, no clock or refreshing required All inputs and outputs are directly TTL-compatible Common I/O using three-state output Output enable and two chips enable inputs for easy application Data retention voltage: 2.0V (min.) PRELIMINARY (March, 2005, Version 0.0) 1 AMIC Technology, Corp. A81L801 General Description The Flash memory of A81L801 is an 8Mbit, 3.0 volt-only memory organized as 1,048,576 bytes of 8 bits or 524,288 words of 16 bits each. The 8 bits of data appear on I/O0 - I/O7; the 16 bits of data appear on I/O0~I/O15. The A81L801 is offered in 69-ball TFBGA package. This device is designed to be programmed in-system with the standard system 3.0 volt VCC supply. Additional 12.0 volt VPP is not required for insystem write or erase operations. However, the A81L801 can also be programmed in standard EPROM programmers. The Flash memory of A81L801 has the first toggle bit, I/O6, which indicates whether an Embedded Program or Erase is in progress, or it is in the Erase Suspend. Besides the I/O6 toggle bit, the Flash memory of A81L801 also has a second toggle bit, I/O2, to indicate whether the addressed sector is being selected for erase. The A81L801 also offers the ability to program in the Erase Suspend mode. The standard A81L801 offers access times of 70 and 90ns, allowing high-speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enables ( CE_F , and CE_S ), write enable ( WE ) and output enable ( OE ) controls. The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The Flash memory of A81L801 is entirely software command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. Device programming occurs by writing the proper program command sequence. This initiates the Embedded Program algorithm - an internal algorithm that automatically times the program pulse widths and verifies proper program margin. Device erasure occurs by executing the proper erase command sequence. This initiates the Embedded Erase algorithm - an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper erase margin. The Unlock Bypass mode facilitates faster programming times by requiring only two write cycles to program data instead of four. The host system can detect whether a program or erase operation is complete by observing the RY / BY pin, or by reading the I/O7 ( Data Polling) and I/O6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The Flash memory of A81L801 is fully erased when shipped from the factory. The hardware sector protection feature disables operations for both program and erase in any combination of the sectors of memory. This can be achieved via programming equipment. The Erase Suspend/Erase Resume feature enables the user to put erase on hold for any period of time to read data from, or program data to, any other sector that is not selected for erasure. True background erase can thus be achieved. The hardware RESET pin terminates any operation in progress and resets the internal state machine to reading array data. The RESET pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the Flash memory. The A81L801 device offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters the automatic sleep mode. The system can also place the device into the standby mode. Power consumption is greatly reduced in both these modes. PRELIMINARY (March, 2005, Version 0.0) 2 AMIC Technology, Corp. A81L801 Pin Configurations 69-Ball FBGA Top View Flash only A1 A5 A6 A10 NC B1 B3 B4 NC B5 NC B6 B7 B8 NC SRAM only Shared NC C2 A7 C3 NC C4 NC C5 WE C6 A8 C7 A11 C8 C9 A3 D2 A6 D4 NC D4 RESET D5 NC D6 NC D7 A12 D8 A15 D9 A2 E1 E2 A5 E3 A18 E4 RY/BY NC A9 E7 A13 E8 NC E9 E10 NC F1 A1 F2 A4 F3 A17 F4 A10 F7 A14 F8 NC F9 NC F10 NC A0 G2 VSS G3 I/O1 G4 G5 G6 I/O6 G7 NC G8 A16 G9 NC CE_F H2 OE H3 I/O9 H4 I/O3 H5 I/O4 H6 I/O13 H7 BYTE_ I/O15(A-1) F H8 H9 CE_S I/O0 J3 I/O10 J4 VCC_F J5 VCC_S J6 I/O12 J7 I/O7 J8 VSS I/O8 K1 I/O2 I/O11 K5 NC K6 I/O5 I/O14 K10 NC NC NC NC Special Handling Instructions for FBGA Package Special handling is required for Flash Memory products in FBGA packages. Flash memory devices in FBGA packages may be damaged if exposed to ultrasonic cleaning methods. The package and/or data integrity may be compromised if the package body is exposed to temperatures above 150°C for prolonged periods of time PRELIMINARY (March, 2005, Version 0.0) 3 AMIC Technology, Corp. A81L801 Product Information Guide Part Number Speed Options Max Access Time (ns) CE_F / CE_S Access (ns) Standard Voltage Range: VCC_F/VCC_S=2.7-3.6V A81L801 70 70 70 40 OE Access (ns) MCP Block Diagram VCC_F A18 to A0 A18 to A0 BYTE_F RESET CE_F RY/BY VSS 8M Bit Flash Memory I/O15 (A-1) to I/O0 I/O15 (A-1) to I/O0 VCC_S VSS A16 to A0 WE 1M Bit Static RAM I/O15 (A-1) to I/O0 OE CE_S PRELIMINARY (March, 2005, Version 0.0) 4 AMIC Technology, Corp. A81L801 Flash Memory Block Diagram RY/BY VCC_F VSS I/O0 - I/O15 (A-1) Sector Switches Erase Voltage Generator State Control PGM Voltage Generator Chip Enable Output Enable Logic STB Data Latch Input/Output Buffers RESET WE BYTE_F Command Register CE_F OE STB VCC Detector Timer Address Latch Y-Decoder Y-Gating A0-A18 X-decoder Cell Matrix PRELIMINARY (March, 2005, Version 0.0) 5 AMIC Technology, Corp. A81L801 SRAM Block Diagram A0 ROW DECODER 512 X 2048 MEMORY ARRAY VCC_S VSS A14 A15 A16 I/O0 INPUT DATA CIRCUIT I/O7 COLUMN I/O OE CE_S WE CONTROL CIRCUIT PRELIMINARY (March, 2005, Version 0.0) 6 AMIC Technology, Corp. A81L801 Pin Description Pin No. A18-A0 I/O14 - I/O0 I/O15 (A-1) CE_F CE_S Description 18 Address Inputs (Common) 15 Data Inputs/Outputs (Common) I/O15 Data Input/Output, Word Mode A-1 LSB Address Input, Byte Mode A-1 I/O15-I/O0 CE_F CE_S OE RY/BY 16 or 8 18 A17-A0 Logic Symbol Chip Enable (Flash) Chip Enable (SRAM) Output Enable (Common) Write Enable (Common) Ready/ BUSY - Output Hardware Reset Pin, Active Low Select Byte Mode or Word Mode Power Supply (Flash) Power Supply (SRAM) Device Ground (Common) Pin Not Connected Internally OE WE RY/ BY RESET WE BYTE_F RESET BYTE_F VCC_F VCC_S VSS NC PRELIMINARY (March, 2005, Version 0.0) 7 AMIC Technology, Corp. A81L801 Series Absolute Maximum Ratings* Storage Temperature Plastic Packages. . . . . .-65°C to + 150°C Ambient Temperature with Power Applied . . . -55°C to + 125°C Voltage with Respect to Ground VCC_F/VCC_S . . . . (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +4.0V A9, OE & RESET (Note 2) . . . . . . . . . . . . . . . . -0.5 to +12.5V All other pins (Note 1) . . . . . .. -0.5V to VCC_F/VCC_ S + 0.5V Output Short Circuit Current (Note 3) . . . . . . . . . . . . . 200mA *Comments Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to this device. These are stress ratings only. Functional operation of this device at these or any other conditions above those indicated in the operational sections of this specification is not implied or intended. Exposure to the absolute maximum rating conditions for extended periods may affect device reliability. Notes: 1. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions, input or I/O pins may undershoot VSS to -2.0V for periods of up to 20ns. Maximum DC voltage on input and I/O pins is VCC_F/VCC_S +0.5V. During voltage transitions, input or I/O pins may overshoot to VCC_F/VCC_S +2.0V for periods up to 20ns. 2. Minimum DC input voltage on A9, OE and RESET i s 0.5V. During voltage transitions, A9, OE and RESET may overshoot VSS to -2.0V for periods of up to 20ns. Maximum DC input voltage on A9 is +12.5V which may overshoot to 14.0V for periods up to 20ns. 3. No more than one output is shorted at a time. Duration of the short circuit should not be greater than one second. Operating Ranges Commercial (C) Devices Ambient Temperature (TA) . . . . . . . . . .. . . .. . . . . 0°C to +70°C Extended Range Devices Ambient Temperature (TA) For – I series . . . . . . . . . . . . . . . . . .. . . . . . . . . -25°C to + 85°C VCC Supply Voltages VCC_F/VCC_S ……. … . . . . . . . . . . . . . . . . . . +2.7V to +3.6V Operating ranges define those limits between which the functionally of the device is guaranteed. Device Bus Operations This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory location. The register is composed of latches that store the commands, along with the address and data information needed to execute the command. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. The appropriate device bus operations table lists the inputs and control levels required, and the resulting output. The following subsections describe each of these operations in further detail. PRELIMINARY (March, 2005, Version 0.0) 8 AMIC Technology, Corp. A81L801 Table 1.1 Device Bus Operations—Flash Word Mode BYTE_F = VIH Operation (Notes 1,2) Read from Flash Standby Output Disable Write to Flash (Program/Erase) Sector Protect Sector Unprotect Temporary Sector Unprotection Flash Reset (Hardware) / Standby Boot Block Sector Write Protect L H L L L L X X X H H H H H H H H H L X H H H L X X X L X X X H X H L AIN X X AIN Sector Address, A6=L, A1=H, A0=L Sector Address, A6=L, A1=H, A0=L AIN X X H H H H H H VID L X DOUT High-Z High-Z DIN DIN DIN DIN High-Z X DOUT Read from SRAM H L L H AIN H High-Z DOUT DIN Write to SRAM H L H L AIN H High-Z DIN DOUT High-Z High-Z DIN X X X High-Z X DOUT DOUT High-Z DIN DIN High-Z CE_F CE_S OE WE A0-A18 RESET I/O7-I/O0 I/O15-I/O8 Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 11.5-12.5V, = Pulse input, X = Don’t Care, DIN = Data In, DOUT = Data Out Notes: 1. Other operations except for those indicated in this column are inhibited. 2. Do not apply CE_F = VIL, CE_S = VIL at the same time. PRELIMINARY (March, 2005, Version 0.0) 9 AMIC Technology, Corp. A81L801 Table 1.2 Device Bus Operations—Flash Word Mode BYTE_F = VIL Flash Operation (Notes 1,2) Read from Flash Standby Output Disable L H L L L L X X H H H H H H H H L X H H VID L X X H X X H X H L CE_F CE_S OE WE I/O15 (A-1) A-1 X X A-1 L L X X A0-A18 RESET H H H H VID VID VID L I/O7-I/O0 I/O14-I/O8 AIN X X AIN Sector Address, A6=L, A1=H, A0=L Sector Address, A6=L, A1=H, A0=L AIN X DOUT High-Z High-Z DIN X Code X High-Z High-Z High-Z High-Z High-Z High-Z High-Z High-Z High-Z Write to Flash (Program/Erase) Sector Protect Sector Unprotect Temporary Sector Unprotection Flash Reset (Hardware)/ Standby Boot Block Sector Write Protect X H X X X DOUT X X X DOUT High-Z DOUT High-Z DOUT DIN High-Z DIN Read from SRAM H L L H DOUT High-z DIN A0 H High-Z DOUT DIN Write to SRAM H L H L DIN High-z A0 H High-Z DIN Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 11.5-12.5V, = Pulse input, X = Don’t Care, DIN = Data In, DOUT = Data Out Notes: 1. Other operations except for those indicated in this column are inhibited. 2. Do not apply CE_F = VIL, CE_S = VIL at the same time. PRELIMINARY (March, 2005, Version 0.0) 10 AMIC Technology, Corp. A81L801 Word/Byte Configuration The BYTE_F pin determines whether the I/O pins I/O15-I/O0 operate in the byte or word configuration. If the BYTE_F pin is set at logic ”1”, the device is in word configuration, I/O15-I/O0 are active and controlled by CE_F and OE . If the BYTE_F pin is set at logic “0”, the device is in byte configuration, and only I/O0-I/O7 are active and controlled by CE_F and OE . I/O8-I/O14 are tri-stated, and I/O15 pin is used as an input for the LSB (A-1) address function. ICC2 in the DC Characteristics table represents the active current specification for the write mode. The "AC Characteristics" section contains timing specification tables and timing diagrams for write operations. Program and Erase Operation Status During an erase or program operation, the system may check the status of the operation by reading the status bits on I/O7 I/O0. Standard read cycle timings and ICC read specifications apply. Refer to "Write Operation Status" for more information, and to each AC Characteristics section for timing diagrams. Standby Mode When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE input. The device enters the CMOS standby mode when the CE_F & Requirements for Reading Array Data To read array data from the outputs, the system must drive the CE_F and OE pins to VIL. CE_F is the power control and selects the device. OE is the output control and gates array data to the output pins. WE should remain at VIH all the time during read operation. The BYTE_F pin determines whether the device outputs array data in words and bytes. The internal state machine is set for reading array data upon device powerup, or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. The device remains enabled for read access until the command register contents are altered. See "Reading Array Data" for more information. Refer to the AC Read Operations table for timing specifications and to the Read Operations Timings diagram for the timing waveforms, lCC1 in the DC Characteristics table represents the active current specification for reading array data. RESET pins are both held at VCC_F ± 0.3V. (Note that this is a more restricted voltage range than VIH.) If CE_F and RESET are held at VIH, but not within VCC_F ± 0.3V, the device will be in the standby mode, but the standby current will be greater. The device requires the standard access time (tCE) before it is ready to read data. If the device is deselected during erasure or programming, the device draws active current until the operation is completed. ICC3 and ICC4 in the DC Characteristics tables represent the standby current specification. Automatic Sleep Mode The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain stable for tACC +30ns. The automatic sleep mode is independent of the CE_F , WE and OE control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. ICC4 in the DC Characteristics table represents the automatic sleep mode current specification. Writing Commands/Command Sequences To write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive WE and CE_F to VIL, and OE to VIH. For program operations, the BYTE_F pin determines whether the device accepts program data in bytes or words, Refer to “Word/Byte Configuration” for more information. The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the Unlock Bypass mode, only two write cycles are required to program a word or byte, instead of four. The “ Word / Byte Program Command Sequence” section has details on programming data to the device using both standard and Unlock Bypass command sequence. An erase operation can erase one sector, multiple sectors, or the entire device. The Sector Address Tables indicate the address range that each sector occupies. A "sector address" consists of the address inputs required to uniquely select a sector. See the "Command Definitions" section for details on erasing a sector or the entire chip, or suspending/resuming the erase operation. After the system writes the auto-select command sequence, the device enters the auto-select mode. The system can then read auto-select codes from the internal register (which is separate from the memory array) on I/O7 - I/O0. Standard read cycle timings apply in this mode. Refer to the "Auto-select Mode" and "Auto-select Command Sequence" sections for more information. PRELIMINARY (March, 2005, Version 0.0) 11 Output Disable Mode When the OE input is at VIH, output from the device is disabled. The output pins are placed in the high impedance state. RESET : Hardware Reset Pin The RESET pin provides a hardware method of resetting the device to reading array data. When the system drives the RESET pin low for at least a period of tRP, the device immediately terminates any operation in progress, tri-states all data output pins, and ignores all read/write attempts for the duration of the RESET pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity. Current is reduced for the duration of the RESET pulse. When RESET is held at VSS ± 0.3V, the device draws CMOS standby current (ICC4). If RESET is held at VIL but not within VSS ± 0.3V, the standby current will be greater. AMIC Technology, Corp. A81L801 The RESET pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash memory, enabling the system to read the boot-up firmware from the Flash memory. If RESET is asserted during a program or erase operation, the RY/ BY pin remains a “0” (busy) until the internal reset operation is complete, which requires a time tREADY (during Embedded Algorithms). The system can thus monitor RY/ BY to determine whether the reset operation is complete. If RESET is asserted when a program or erase operation is not executing (RY/ BY pin is “1”), the reset operation is completed within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after the RESET pin return to VIH. Refer to the AC Characteristics tables for RESET parameters and diagram. Table 2. A81L801 Top Boot Block Sector Address Table Sector A18 A17 A16 A15 A14 A13 A12 Sector Size (Kbytes/ Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 32/16 8/4 8/4 16/8 Address Range (in hexadecimal) Byte Mode (x 8) 00000h - 0FFFFh 10000h - 1FFFFh 20000h - 2FFFFh 30000h - 3FFFFh 40000h - 4FFFFh 50000h - 5FFFFh 60000h - 6FFFFh 70000h - 7FFFFh 80000h - 8FFFFh 90000h - 9FFFFh A0000h - AFFFFh B0000h - BFFFFh C0000h - CFFFFh D0000h - DFFFFh E0000h - EFFFFh F0000h - F7FFFh F8000h - F9FFFh FA000h - FBFFFh FC000h - FFFFFh Word Mode (x16) 00000h - 07FFFh 08000h - 0FFFFh 10000h - 17FFFh 18000h - 1FFFFh 20000h - 27FFFh 28000h - 2FFFFh 30000h - 37FFFh 38000h - 3FFFFh 40000h - 47FFFh 48000h - 4FFFFh 50000h - 57FFFh 58000h - 5FFFFh 60000h - 67FFFh 68000h - 6FFFFh 70000h - 77FFFh 78000h - 7BFFFh 7C000h - 7CFFFh 7D000h - 7DFFFh 7E000h - 7FFFFh SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 1 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 1 1 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 1 1 1 X X X X X X X X X X X X X X X 0 1 1 1 X X X X X X X X X X X X X X X X 0 0 1 X X X X X X X X X X X X X X X X 0 1 X Note: Address range is A18: A-1 in byte mode and A18: A0 in word mode. See “Word/Byte Configuration” section. PRELIMINARY (March, 2005, Version 0.0) 12 AMIC Technology, Corp. A81L801 Table 3. A81L801 Bottom Boot Block Sector Address Table Sector A18 A17 A16 A15 A14 A13 A12 Sector Size (Kbytes/ Kwords) 16/8 8/4 8/4 32/16 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 64/32 Address Range (in hexadecimal) Byte Mode (x 8) 00000h - 03FFFh 04000h - 05FFFh 06000h - 07FFFh 08000h - 0FFFFh 10000h - 1FFFFh 20000h – 2FFFFh 30000h - 3FFFFh 40000h - 4FFFFh 50000h - 5FFFFh 60000h - 6FFFFh 70000h - 7FFFFh 80000h - 8FFFFh 90000h - 9FFFFh A0000h - AFFFFh B0000h - BFFFFh C0000h - CFFFFh D0000h - DFFFFh E0000h - EFFFFh F0000h - FFFFFh Word Mode (x16) 00000 - 01FFF 02000 - 02FFF 03000 - 03FFF 04000 - 07FFF 08000 - 0FFFF 10000 - 17FFF 18000 - 1FFFF 20000 - 27FFF 28000 - 2FFFF 30000 - 37FFF 38000 - 3FFFF 40000 - 47FFF 48000 - 4FFFF 50000 - 57FFF 58000 - 5FFFF 60000 - 67FFF 68000 - 6FFFF 70000 - 77FFF 78000 - 7FFFF SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 0 0 1 X X X X X X X X X X X X X X X 0 1 1 X X X X X X X X X X X X X X X X X 0 1 X X X X X X X X X X X X X X X X Note: Address range is A18: A-1 in byte mode and A18: A0 in word mode. See “Word/Byte Configuration” section. PRELIMINARY (March, 2005, Version 0.0) 13 AMIC Technology, Corp. A81L801 Autoselect Mode The autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on I/O7 - I/O0. This mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. However, the autoselect codes can also be accessed in-system through the command register. When using programming equipment, the autoselect mode requires VID (11.5V to 12.5 V) on address pin A9. Address pins A6, A1, and A0 must be as shown in autoselect Codes (High Voltage Method) table. In addition, when verifying sector protection, the sector address must appear on the appropriate highest order address bits. Refer to the corresponding Sector Address Tables. The Command Definitions table shows the remaining address bits that are don't care. When all necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on I/O7 I/O0.To access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in the Command Definitions table. This method does not require VID. See "Command Definitions" for details on using the autoselect mode. Table 4. A81L801 Autoselect Codes (High Voltage Method) Description Mode CE_F OE WE A18 to A12 X X A11 to A10 X X A9 A8 to A7 X X A6 A5 to A2 X X A1 A0 I/O8 to I/O15 X B3h I/O7 to I/O0 37h 1Ah 1Ah 9Bh 9Bh 7Fh 01h (protected) 00h (unprotected) Manufacturer ID: AMIC Device ID: A81L801 (Top Boot Block) Device ID: A81L801 (Bottom Boot Block) Continuation ID Word Byte Word Byte L L L L H H VID VID L L L L L H X B3h L L L L H H X X X X VID VID X X L L X X L H H H X X X Sector Protection Verification L L H SA X VID X L X H L X L=Logic Low= VIL, H=Logic High=VIH, SA=Sector Address, X=Don’t Care, CE_S = VIH Note: The autoselect codes may also be accessed in-system via command sequences. PRELIMINARY (March, 2005, Version 0.0) 14 AMIC Technology, Corp. A81L801 Sector Protection/Unprotection The hardware sector protection feature disables both program and erase operations in any sector. The hardware sector unprotection features re-enables both program and erase operations in previously protected sectors. It is possible to determine whether a sector is protected or unprotected. See “Autoselect Mode” for details. Sector protection / unprotection can be implemented via two methods. The primary method requires VID on the RESET pin only, and can be implemented either in-system or via programming equipment. Figure 2 shows the algorithm and the Sector Protect / Unprotect Timing Diagram illustrates the timing waveforms for this feature. This method uses standard microprocessor bus cycle timing. For sector unprotect, all unprotected sectors must first be protected prior to the first sector unprotect write cycle. The alternate method must be implemented using programming equipment. The procedure requires a high voltage (VID) on address pin A9 and the control pins. The device is shipped with all sectors unprotected. It is possible to determine whether a sector is protected or unprotected. See "Autoselect Mode" for details. Temporary Sector Unprotect This feature allows temporary unprotection of previous protected sectors to change data in-system. The Sector Unprotect mode is activated by setting the RESET pin to VID. During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. Once VID is removed from the RESET pin, all the previously protected sectors are protected again. Figure 1 shows the algorithm, and the Temporary Sector Unprotect diagram shows the timing waveforms, for this feature. START RESET = VID (Note 1) Hardware Data Protection The requirement of command unlocking sequence for programming or erasing provides data protection against inadvertent writes (refer to the Command Definitions table). In addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during VCC power-up transitions, or from system noise. The device is powered up to read array data to avoid accidentally writing data to the array. Perform Erase or Program Operations RESET = VIH Write Pulse "Glitch" Protection Noise pulses of less than 5ns (typical) on OE , CE_F or WE do not initiate a write cycle. Temporary Sector Unprotect Completed (Note 2) Logical Inhibit Write cycles are inhibited by holding any one of OE =VIL, CE_F = VIH or WE = VIH. To initiate a write cycle, CE_F and WE must be a logical zero while OE is a logical one. Notes: 1. All protected sectors unprotected. 2. All previously protected sectors are protected once again. Figure 1. Temporary Sector Unprotect Operation Power-Up Write Inhibit If WE = CE_F = VIL and OE = VIH during power up, the device does not accept commands on the rising edge of WE . The internal state machine is automatically reset to reading array data on the initial power-up. PRELIMINARY (March, 2005, Version 0.0) 15 AMIC Technology, Corp. A81L801 START Protect all sectors: The indicated portion of the sector protect algorithm must be performed for all unprotected sectors prior to issuing the first sector unprotect address START PLSCNT=1 PLSCNT=1 RESET=V ID RESET=V ID Wait 1 us Wait 1 us Temporary Sector Unprotect Mode No First Write Cycle=60h? Yes Set up sector address No First Write Cycle=60h? Yes All sectors protected? Yes Set up first sector address No Temporary Sector Unprotect Mode Sector Protect Write 60h to sector address with A6=0, A1=1, A0=0 Wait 150 us Verify Sector Protect: Write 40h to sector address with A6=0, A1=1, A0=0 Sector Unprotect: Write 60h to sector address with A6=1, A1=1, A0=0 Reset PLSCNT=1 Increment PLSCNT Wait 15 ms Verify Sector Unprotect : Write 40h to sector address with A6=1, A1=1, A0=0 Read from sector address with A6=0, A1=1, A0=0 No PLSCNT =25? Yes Device failed No Data=01h? Increment PLSCNT Read from sector address with A6=1, A1=1, A0=0 No Set up next sector address Yes Protect another sector? No Remove V ID from RESET Write reset command Yes PLSCNT= 1000? No Data=00h? Yes Device failed Yes Last sector verified? Yes Remove V ID from RESET No Sector Protect Algorithm Sector Protect complete Sector Unprotect Algorithm Write reset Command Sector Unprotect complete Figure 2. In-System Sector Protect/Unprotect Algorithms PRELIMINARY (March, 2005, Version 0.0) 16 AMIC Technology, Corp. A81L801 Command Definitions Writing specific address and data commands or sequences into the command register initiates device operations. The Command Definitions table defines the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence resets the device to reading array data. All addresses are latched on the falling edge of WE or CE_F , whichever happens later. All data is latched on the rising edge of WE or CE_F , whichever happens first. Refer to the appropriate timing diagrams in the "AC Characteristics" section. Autoselect Command Sequence The autoselect command sequence allows the host system to access the manufacturer and devices codes, and determine whether or not a sector is protected. The Command Definitions table shows the address and data requirements. This method is an alternative to that shown in the Autoselect Codes (High Voltage Method) table, which is intended for PROM programmers and requires VID on address bit A9. The autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect command. The device then enters the autoselect mode, and the system may read at any address any number of times, without initiating another command sequence. A read cycle at address XX00h retrieves the manufacturer code and another read cycle at XX03h retrieves the continuation code. A read cycle at address XX01h returns the device code. A read cycle containing a sector address (SA) and the address 02h in returns 01h if that sector is protected, or 00h if it is unprotected. Refer to the Sector Address tables for valid sector addresses. The system must write the reset command to exit the autoselect mode and return to reading array data. Reading Array Data The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. The device is also ready to read array data after completing an Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the device enters the Erase Suspend mode. The system can read array data using the standard read timings, except that if it reads at an address within erase-suspended sectors, the device outputs status data. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See "Erase Suspend/Erase Resume Commands" for more information on this mode. The system must issue the reset command to re-enable the device for reading array data if I/O5 goes high, or while in the autoselect mode. See the "Reset Command" section, next. See also "Requirements for Reading Array Data" in the "Device Bus Operations" section for more information. The Read Operations table provides the read parameters, and Read Operation Timings diagram shows the timing diagram. Word/Byte Program Command Sequence The system may program the device by word or byte, depending on the state of the BYTE_F pin. Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically provides internally generated program pulses and verify the programmed cell margin. Table 5 shows the address and data requirements for the byte program command sequence. When the Embedded Program algorithm is complete, the device then returns to reading array data and addresses are longer latched. The system can determine the status of the program operation by using I/O7, I/O6, or RY/ BY . See “White Operation Status” for information on these status bits. Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the programming operation. The Byte Program command sequence should be reinitiated once the device has reset to reading array data, to ensure data integrity. Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from a “0” back to a “1”. Attempting to do so may halt the operation and set I/O5 to “1”, or cause the Data Polling algorithm to indicate the operation was successful. However, a succeeding read will show that the data is still “0”. Only erase operations can convert a “0” to a “1”. Reset Command Writing the reset command to the device resets the device to reading array data. Addresses bits are don't care for this command. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the device to reading array data. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the device to reading array data (also applies to programming in Erase Suspend mode). Once programming begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to reading array data (also applies to autoselect during Erase Suspend). If I/O5 goes high during a program or erase operation, writing the reset command returns the device to reading array data (also applies during Erase Suspend). PRELIMINARY (March, 2005, Version 0.0) 17 AMIC Technology, Corp. A81L801 START Write Program Command Sequence Addresses are don’t care for both cycle. The device returns to reading array data. Figure 3 illustrates the algorithm for the program operation. See the Erase/Program Operations in “AC Characteristics” for parameters, and to Program Operation Timings for timing diagrams. Chip Erase Command Sequence Chip erase is a six-bus-cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. The Command Definitions table shows the address and data requirements for the chip erase command sequence. Any commands written to the chip during the Embedded Erase algorithm are ignored. The system can determine the status of the erase operation by using I/O7, I/O6, or I/O2. See "Write Operation Status" for information on these status bits. When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. Figure 4 illustrates the algorithm for the erase operation. See the Erase/Program Operations tables in "AC Characteristics" for parameters, and to the Chip/Sector Erase Operation Timings for timing waveforms. Embedded Program algorithm in progress Data Poll from System Verify Data ? No Yes Increment Address Last Address ? Yes Programming Completed Sector Erase Command Sequence Sector erase is a six-bus-cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the address of the sector to be erased, and the sector erase command. The Command Definitions table shows the address and data requirements for the sector erase command sequence. The device does not require the system to preprogram the memory prior to erase. The Embedded Erase algorithm automatically programs and verifies the sector for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. After the command sequence is written, a sector erase time-out of 50µs begins. During the time-out period, additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles must be less than 50µs, otherwise the last address and command might not be accepted, and erasure may begin. It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is written. If the time between additional sector erase commands can be assumed to be less than 50µs, the system need not monitor I/O3. Any command other than Sector Erase or Erase Suspend during the time-out period resets the device to reading array data. The system must rewrite the command sequence and any additional sector addresses and commands. The system can monitor I/O3 to determine if the sector erase timer has timed out. (See the " I/O3: Sector Erase Timer" Note : See the appropriate Command Definitions table for program command sequence. Figure 3. Program Operation Unlock Bypass Command Sequence The unlock bypass feature allows the system to program bytes or words to the device faster than using the standard program command sequence. The unlock bypass command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. The device then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is required to program in this mode. The first cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the program address and data. Additional data is programmed in the same manner. This mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total programming time. Table 5 shows the requirements for the command sequence. During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are valid. To exit the unlock bypass mode, the system must issue the twocycle unlock bypass reset command sequence. The first cycle must contain the data 90h; the second cycle the data 00h. PRELIMINARY (March, 2005, Version 0.0) 18 AMIC Technology, Corp. A81L801 section.) The time-out begins from the rising edge of the final WE pulse in the command sequence. Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. The system can determine the status of the erase operation by using I/O7, I/O6, or I/O2. Refer to "Write Operation Status" for information on these status bits. 4 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations tables in the "AC Characteristics" section for parameters, and to the Sector Erase Operations Timing diagram for timing waveforms. The system may also write the autoselect command sequence when the device is in the Erase Suspend mode. The device allows reading autoselect codes even at addresses within erasing sectors, since the codes are not stored in the memory array. When the device exits the autoselect mode, the device reverts to the Erase Suspend mode, and is ready for another valid operation. See "Autoselect Command Sequence" for more information. The system must write the Erase Resume command (address bits are "don't care") to exit the erase suspend mode and continue the sector erase operation. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the device has resumed erasing. Erase Suspend/Erase Resume Commands The Erase Suspend command allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. This command is valid only during the sector erase operation, including the 50µs time-out period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. Writing the Erase Suspend command during the Sector Erase time-out immediately terminates the time-out period and suspends the erase operation. Addresses are "don't cares" when writing the Erase Suspend command. When the Erase Suspend command is written during a sector erase operation, the device requires a maximum of 20µs to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. After the erase operation has been suspended, the system can read array data from or program data to any sector not selected for erasure. (The device "erase suspends" all sectors selected for erasure.) Normal read and write timings and command definitions apply. Reading at any address within erase-suspended sectors produces status data on I/O7 - I/O0. The system can use I/O7, or I/O6 and I/O2 together, to determine if a sector is actively erasing or is erase-suspended. See "Write Operation Status" for information on these status bits. After an erase-suspended program operation is complete, the system can once again read array data within non-suspended sectors. The system can determine the status of the program operation using the I/O7 or I/O6 status bits, just as in the standard program operation. See "Write Operation Status" for more information. START Write Erase Command Sequence Data Poll from System Embedded Erase algorithm in progress No Data = FFh ? Yes Erasure Completed Note : 1. See the appropriate Command Definitions table for erase command sequences. 2. See "I/O3 : Sector Erase Timer" for more information. Figure 4. Erase Operation PRELIMINARY (March, 2005, Version 0.0) 19 AMIC Technology, Corp. A81L801 Table 5. A81L801 Command Definitions Command Sequence (Note 1) Read (Note 6) Reset (Note 7) Cycles Bus Cycles (Notes 2 - 5) First Addr Data RA XXX 555 AAA 555 AAA RD F0 AA AA AA 2AA 555 2AA 555 2AA 555 AA 2AA 555 2AA AA AAA 555 2AA 555 2AA 555 PA XXX 2AA 555 2AA 555 55 55 PD 00 55 55 555 AAA 555 AAA 80 80 555 AAA 555 AAA AA AA 2AA 555 2AA 555 55 55 555 AAA SA 10 30 55 AAA 555 AAA 555 AAA A0 20 55 55 55 55 555 AAA 555 AAA 555 AAA 555 AAA 555 90 90 90 90 90 X00 X01 X02 X01 X02 X03 X06 (SA) X02 (SA) X04 PA XX00 XX01 00 01 PD 37 B31A 1A B39B 9B 7F Second Addr Data Third Fourth Addr Data Addr Data Fifth Addr Data Sixth Addr Data 1 1 Word Byte Word Byte Word Byte Word Byte 4 4 4 Manufacturer ID Device ID, Top Boot Block Device ID, Bottom Boot Block Autoselect (Note 8) 555 AAA 555 AAA 555 Continuation ID 4 Sector Protect Verify (Note 9) Word 4 Byte Word Program Unlock Bypass Byte 4 Word Byte 3 Unlock Bypass Program (Note 10) 2 Unlock Bypass Reset (Note 11) AA AAA 555 AAA AA XXX A0 XXX 90 555 AAA 555 AAA XXX XXX AA AA B0 30 555 2 6 6 1 1 Word Chip Erase Byte Word Byte Sector Erase Erase Suspend (Note 12) Erase Resume (Note 13) Legend: X = Don't care RA = Address of the memory location to be read. RD = Data read from location RA during read operation. PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE or CE_F pulse, whichever happens later. PD = Data to be programmed at location PA. Data latches on the rising edge of WE or CE_F pulse, whichever happens first. SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A18 - A12 select a unique sector. Note: 1. See Table 1 for description of bus operations. 2. All values are in hexadecimal. 3. Except when reading array or autoselect data, all bus cycles are write operation. 4. Data bits I/O15~I/O8 are don’t care for unlock and command cycles. 5. Address bits A18 - A11 are don't cares for unlock and command cycles, unless SA or PA required. 6. No unlock or command cycles required when reading array data. 7. The Reset command is required to return to reading array data when device is in the autoselect mode, or if I/O5 goes high (while the device is providing status data). 8. The fourth cycle of the autoselect command sequence is a read cycle. 9. The data is 00h for an unprotected sector and 01h for a protected sector. See “Autoselect Command Sequence” for more information. 10. The Unlock Bypass command is required prior to the Unlock Bypass Program command. 11. The Unlock Bypass Reset command is required to return to reading array data when the device is in the unlock bypass mode. 12. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. 13. The Erase Resume command is valid only during the Erase Suspend mode. PRELIMINARY (March, 2005, Version 0.0) 20 AMIC Technology, Corp. A81L801 Write Operation Status Several bits, I/O2, I/O3, I/O5, I/O6, I/O7, RY/ BY are provided in the A81L801 to determine the status of a write operation in the flash memory. Table 6 and the following subsections describe the functions of these status bits. I/O7, I/O6 and RY/ BY each offer a method for determining whether a program or erase operation is complete or in progress. These three bits are discussed first. START I/O7: Data Polling The Data Polling bit, I/O7, indicates to the host system whether an Embedded Algorithm is in progress or completed, or whether the device is in Erase Suspend. Data Polling is valid after the rising edge of the final WE pulse in the program or erase command sequence. During the Embedded Program algorithm, the device outputs on I/O7 the complement of the datum programmed to I/O7. This I/O7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to I/O7. The system must provide the program address to read valid status information on I/O7. If a program address falls within a protected sector, Data Polling on I/O7 is active for approximately 2µs, then the device returns to reading array data. During the Embedded Erase algorithm, Data Polling produces a "0" on I/O7. When the Embedded Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data Polling produces a "1" on I/O7.This is analogous to the complement/true datum output described for the Embedded Program algorithm: the erase function changes all the bits in a sector to "1"; prior to this, the device outputs the "complement," or "0." The system must provide an address within any of the sectors selected for erasure to read valid status information on I/O7. After an erase command sequence is written, if all sectors selected for erasing are protected, Data Polling on I/O7 is active for approximately 100µs, then the device returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. When the system detects I/O7 has changed from the complement to true data, it can read valid data at I/O7 - I/O0 on the following read cycles. This is because I/O7 may change asynchronously with I/O0 - I/O6 while Output Enable ( OE ) is asserted low. The Data Polling Timings (During Embedded Algorithms) in the "AC Characteristics" section illustrates this. Table 6 shows the outputs for Data Polling on I/O7. Figure 5 shows the Data Polling algorithm. Read I/O7-I/O0 Address = VA Yes I/O7 = Data ? No No I/O5 = 1? Yes Read I/O7 - I/O0 Address = VA Yes I/O7 = Data ? No FAIL PASS Note : 1. VA = Valid address for programming. During a sector erase operation, a valid address is an address within any sector selected for erasure. During chip erase, a valid address is any non-protected sector address. 2. I/O7 should be rechecked even if I/O5 = "1" because 5 I/O7 may change simultaneously with I/O . Figure 5. Data Polling Algorithm PRELIMINARY (March, 2005, Version 0.0) 21 AMIC Technology, Corp. A81L801 RY/ BY : Read/ Busy The RY/ BY is a dedicated, open-drain output pin that indicates whether an Embedded algorithm is in progress or complete. The RY/ BY status is valid after the rising edge of the final WE pulse in the command sequence. Since RY/ BY is an opendrain output, several RY/ BY pins can be tied together in parallel with a pull-up resistor to VCC. If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is high (Ready), the device is ready to read array data (including during the Erase Suspend mode), or is in the standby mode. Table 6 shows the outputs for RY/ BY . Refer to “ RESET Timings”, “Timing Waveforms for Program Operation” and “Timing Waveforms for Chip/Sector Erase Operation” for more information. I/O2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE or CE_F to control the read cycles.) But I/O2 cannot distinguish whether the sector is actively erasing or is erase-suspended. I/O6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 6 to compare outputs for I/O2 and I/O6. Figure 6 shows the toggle bit algorithm in flowchart form, and the section " I/O2: Toggle Bit II" explains the algorithm. See also the " I/O6: Toggle Bit I" subsection. Refer to the Toggle Bit Timings figure for the toggle bit timing diagram. The I/O2 vs. I/O6 figure shows the differences between I/O2 and I/O6 in graphical form. Reading Toggle Bits I/O6, I/O2 Refer to Figure 6 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read I/O7 - I/O0 at least twice in a row to determine whether a toggle bit is toggling. Typically, a system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on I/O7 - I/O0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of I/O5 is high (see the section on I/O5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as I/O5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not complete the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and I/O5 has not gone high. The system may continue to monitor the toggle bit and I/O5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 6). I/O6: Toggle Bit I Toggle Bit I on I/O6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE pulse in the command sequence (prior to the program or erase operation), and during the sector erase timeout. During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause I/O6 to toggle. (The system may use either OE or CE_F to control the read cycles.) When the operation is complete, I/O6 stops toggling. After an erase command sequence is written, if all sectors selected for erasing are protected, I/O6 toggles for approximately 100µs, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. The system can use I/O6 and I/O2 together to determine whether a sector is actively erasing or is erase-suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), I/O6 toggles. When the device enters the Erase Suspend mode, I/O6 stops toggling. However, the system must also use I/O2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use I/O7 (see the subsection on " I/O7: Data Polling"). If a program address falls within a protected sector, I/O6 toggles for approximately 2µs after the program command sequence is written, then returns to reading array data. I/O6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete. The Write Operation Status table shows the outputs for Toggle Bit I on I/O6. Refer to Figure 6 for the toggle bit algorithm, and to the Toggle Bit Timings figure in the "AC Characteristics" section for the timing diagram. The I/O2 vs. I/O6 figure shows the differences between I/O2 and I/O6 in graphical form. See also the subsection on " I/O2: Toggle Bit II". I/O5: Exceeded Timing Limits I/O5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions I/O5 produces a "1." This is a failure condition that indicates the program or erase cycle was not successfully completed. The I/O5 failure condition may appear if the system tries to program a "1 "to a location that is previously programmed to "0." Only an erase operation can change a "0" back to a "1." Under this condition, the device halts the operation, and when the operation has exceeded the timing limits, I/O5 produces a "1." Under both these conditions, the system must issue the reset command to return the device to reading array data. I/O2: Toggle Bit II The "Toggle Bit II" on I/O2, when used with I/O6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE pulse in the command sequence. PRELIMINARY (March, 2005, Version 0.0) 22 AMIC Technology, Corp. A81L801 I/O3: Sector Erase Timer After writing a sector erase command sequence, the system may read I/O3 to determine whether or not an erase operation has begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase command. When the time-out is complete, I/O3 switches from "0" to "1." The system may ignore I/O3 if the system can guarantee that the time between additional sector erase commands will always be less than 50µs. See also the "Sector Erase Command Sequence" section. After the sector erase command sequence is written, the system should read the status on I/O7 ( Data Polling) or I/O6 (Toggle Bit I) to ensure the device has accepted the command sequence, and then read I/O3. If I/O3 is "1", the internally controlled erase cycle has begun; all further commands (other than Erase Suspend) are ignored until the erase operation is complete. If I/O3 is "0", the device will accept additional sector erase commands. To ensure the command has been accepted, the system software should check the status of I/O3 prior to and following each subsequent sector erase command. If I/O3 is high on the second status check, the last command might not have been accepted. Table 6 shows the outputs for I/O3. START Read I/O7-I/O0 Read I/O7-I/O0 (Note 1) Toggle Bit = Toggle ? Yes No No I/O5 = 1? Yes Read I/O7 - I/O0 Twice (Notes 1,2) Toggle Bit = Toggle ? No Yes Program/Erase Operation Not Commplete, Write Reset Command Program/Erase Operation Complete Notes : 1. Read toggle bit twice to determine whether or not it is toggling. See text. 2. Recheck toggle bit because it may stop toggling as I/O5 changes to "1". See text. Figure 6. Toggle Bit Algorithm PRELIMINARY (March, 2005, Version 0.0) 23 AMIC Technology, Corp. A81L801 Table 6. Write Operation Status Operation Standard Mode Erase Suspend Mode Embedded Program Algorithm Embedded Erase Algorithm Reading within Erase Suspended Sector Reading within Non-Erase Suspended Sector Erase-Suspend-Program Notes: 1. I/O7 and I/O2 require a valid address when reading status information. Refer to the appropriate subsection for further details. 2. I/O5 switches to “1” when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. See “I/O5: Exceeded Timing Limits” for more information. I/O7 (Note 1) I/O6 I/O5 (Note 2) I/O3 I/O2 (Note 1) RY/ BY 0 0 1 1 0 I/O7 0 1 Data Toggle Toggle No toggle Data Toggle 0 0 0 Data 0 N/A 1 N/A Data N/A No toggle Toggle Toggle Data N/A I/O7 Maximum Negative Input Overshoot 20ns 20ns +0.8V -0.5V -2.0V 20ns Maximum Positive Input Overshoot 20ns VCC_F+2.0V VCC_F+0.5V 2.0V 20ns 20ns PRELIMINARY (March, 2005, Version 0.0) 24 AMIC Technology, Corp. A81L801 DC Characteristics CMOS Compatible (TA=0°C to 70°C or -25°C to + 85°C for –I) Parameter Symbol Parameter Description Input Load Current A9 Input Load Current Output Leakage Current Test Description VIN = VSS to VCC_F. VCC_F = VCC_F Max VCC_F = VCC_F Max, A9 =12.5V VOUT = VSS to VCC_F. VCC_F = VCC_F Max Min. Typ. Max. ±1.0 35 ±1.0 Unit µA µA µA ILI ILIT ILO CE_F = VIL, OE = VIH ICC1 VCC_F Active Read Current (Notes 1, 2) Byte Mode 5 MHz 1 MHz 5 MHz 1 MHz 9 2 9 2 20 0.2 0.2 0.2 -0.5 0.7 x VCC_F 16 4 16 4 30 5 5 5 0.8 VCC_F + 0.3 12.5 0.45 mA µA µA µA V V V V V V mA CE_F = VIL, OE = VIH Word Mode ICC2 ICC3 ICC4 ICC5 VIL VIH VID VOL VOH1 VCC_F Active Write (Program/Erase) CE_F = VIL, OE =VIH Current (Notes 2, 3, 4) VCC_F Standby Current (Note 2) CE_F = VIH, RESET = VCC_F ± 0.3V VCC_F Standby Current During Reset (Note 2) Automatic Sleep Mode (Note 2, 4, 5) Input Low Level Input High Level Voltage for Autoselect and Temporary Unprotect Sector Output Low Voltage Output High Voltage VCC_F = 3.3 V IOL = 4.0mA, VCC_F = VCC_F Min IOH = -2.0 mA, VCC_F = VCC_F Min IOH = -100 µA, VCC_F = VCC_F Min 0.85 x VCC_F VCC_F 0.4 RESET = VSS ± 0.3V VIH = VCC_F ± 0.3V; VIL = VSS ± 0.3V 11.5 VOH2 Notes: 1. The ICC current listed is typically less than 2 mA/MHz, with OE at VIH. Typical VCC_F is 3.0V. 2. Maximum ICC specifications are tested with VCC_F = VCC_F max. 3. ICC active while Embedded Algorithm (program or erase) is in progress. 4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30ns. Typical sleep mode current is 200nA. 5. Not 100% tested. PRELIMINARY (March, 2005, Version 0.0) 25 AMIC Technology, Corp. A81L801 DC Characteristics (continued) Zero Power Flash 25 Supply Current in mA 20 15 10 5 0 0 500 1000 1500 2000 Time in ns Note: Addresses are switching at 1MHz 2500 3000 3500 4000 ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents) 10 3.6V 8 2.7V Supply Current in mA 6 4 2 0 1 Note : T = 25 ° C 2 3 Frequency in MHz 4 5 Typical ICC1 vs. Frequency PRELIMINARY (March, 2005, Version 0.0) 26 AMIC Technology, Corp. A81L801 AC Characteristics Read Only Operations (TA=0°C to 70°C or -25°C to + 85°C for –I) Parameter Symbols JEDEC tAVAV tAVQV Speed Description Read Cycle Time (Note 1) Address to Output Delay Unit Std tRC tACC Test Setup -70 Min. 70 70 ns ns CE_F = VIL OE = VIL Max. tELQV tGLQV TCE_F tOE Chip Enable to Output Delay Output Enable to Output Delay Read Output Enable Hold Time (Note 1) OE = VIL Max. Max. Min. Min. Max. 70 30 0 10 25 25 ns ns ns ns ns ns tOEH Toggle and Data Polling tEHQZ tGHQZ tDF tDF Chip Enable to Output High Z (Notes 1) Output Enable to Output High Z (Notes 1) Output Hold Time from Addresses, CE or OE , Whichever Occurs First (Note 1) tAXQX tOH Min. 0 ns Notes: 1. Not 100% tested. 2. See Test Conditions and Test Setup for test specifications. Timing Waveforms for Read Only Operation tRC Addresses tACC CE_F tDF OE tOEH WE Output High-Z tCE Output Valid tOH High-Z tOE Addresses Stable RESET RY/BY 0V PRELIMINARY (March, 2005, Version 0.0) 27 AMIC Technology, Corp. A81L801 AC Characteristics Hardware Reset ( RESET ) (TA=0°C to 70°C or -25°C to + 85°C for –I) Parameter JEDEC Std tREADY tREADY tRP tRH tRB tRPD Description Test Setup Max Max Min Min Min Min All Speed Options 20 500 500 50 0 20 Unit µs ns ns ns ns µs RESET Pin Low (During Embedded Algorithms) to Read or Write (See Note) RESET Pin Low (Not During Embedded Algorithms) to Read or Write (See Note) RESET Pulse Width RESET High Time Before Read (See Note) RY/ BY Recovery Time RESET Low to Standby Mode Note: Not 100% tested. RESET Timings RY/BY CE_F, OE tRH RESET tRP tReady Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms tReady RY/BY ~~ ~~ tRB CE_F, OE ~ ~ RESET tRP PRELIMINARY (March, 2005, Version 0.0) 28 AMIC Technology, Corp. A81L801 Temporary Sector Unprotect (TA=0°C to 70°C or -25°C to + 85°C for –I) Parameter JEDEC Std tVIDR tRSP Description VID Rise and Fall Time (See Note) Min Min All Speed Options 500 4 Unit ns µs RESET Setup Time for Temporary Sector Unprotect Note: Not 100% tested. Temporary Sector Unprotect Timing Diagram 12V 0 or 3V RESET CE_F tVIDR Program or Erase Command Sequence ~ ~ 0 or 3V tVIDR ~ ~ WE ~~ ~~ tRSP RY/BY PRELIMINARY (March, 2005, Version 0.0) 29 AMIC Technology, Corp. A81L801 AC Characteristics Word/Byte Configuration ( BYTE_F ) (TA=0°C to 70°C or -25°C to + 85°C for – I) Parameter JEDEC Std tELFL/tELFH tFLQZ tHQV Description Speed Option -70 Unit CE_F to BYTE_F Switching Low or High BYTE_F Switching Low to Output High-Z BYTE_F Switching High to Output Active Max Max Min 5 25 70 ns ns ns BYTE_F Timings for Read Operations CE_F OE BYTE_F tELFL BYTE_F Switching from word to byte mode I/O0-I/O14 Data Output (I/O0-I/O14) Data Output (I/O0-I/O7) I/O15 (A-1) tELFH I/O15 Output tFLQZ Address Input BYTE_F BYTE_F Switching from byte to word mode I/O0-I/O14 Data Output (I/O0-I/O7) Data Output (I/O0-I/O14) I/O15 (A-1) Address Input tFHQV I/O15 Output BYTE_F Timings for Write Operations CE_F The falling edge of the last WE signal WE BYTE_F tSET (tAS) tHOLD(tAH) Note: Refer to the Erase/Program Operations table for tAS and tAH specifications. PRELIMINARY (March, 2005, Version 0.0) 30 AMIC Technology, Corp. A81L801 AC Characteristics Erase and Program Operations (TA=0°C to 70°C or -25°C to + 85°C for –I) Parameter JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX Description Speed -70 Unit Std tWC tAS tAH tDS tDH tOES Write Cycle Time (Note 1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write ( OE high to WE low) Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Byte Word Typ. Typ. Typ. Min. Min Min 70 0 45 35 0 0 0 0 0 35 30 5 ns ns ns ns ns ns ns ns ns ns ns µs tGHWL tELWL tWHEH tWLWH tWHWL tGHWL tCS tCH tWP tWPH CE_F Setup Time CE_F Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation (Note 2) Sector Erase Operation (Note 2) VCC_F Set Up Time (Note 1) Recovery Time from RY/ BY Program/Erase Valid to RY/ BY Delay tWHWH1 tWHWH1 7 0.7 50 0 90 sec µs ns ns tWHWH2 tWHWH2 tvcs tRB tBUSY Notes: 1. Not 100% tested. 2. See the "Erase and Programming Performance" section for more information. PRELIMINARY (March, 2005, Version 0.0) 31 AMIC Technology, Corp. A81L801 Timing Waveforms for Program Operation Program Command Sequence (last two cycles) Read Status Data (last two cycles) Addresses 555h PA ~ ~ tWC tAS PA PA tAH CE_F tCH OE tWP WE tCS tDS DATA A0h tWPH tDH ~ ~ tWHWH1 ~ ~ ~ ~ ~~ ~~ PD Status DOUT tRB tBUSY RY/BY tVCS VCC_F Note : 1. PA = program addrss, PD = program data, Dout is the true data at the program address. 2. Illustration shows device in word mode. ~~ ~~ PRELIMINARY (March, 2005, Version 0.0) 32 AMIC Technology, Corp. A81L801 Timing Waveforms for Chip/Sector Erase Operation Erase Command Sequence (last two cycles) Read Status Data Addresses 2AAh SA 555h for chip erase ~ ~ VA tWC tAS VA tAH CE_F OE tCH tWP WE tCS tDS Data 55h tDH 30h 10h for chip erase tWPH ~ ~ tWHWH2 ~ ~ ~~ ~~ In Progress ~ ~ Complete tRB tBUSY RY/BY tVCS VCC_F Note : 1. SA = Sector Address (for Sector Erase), VA = Valid Address for reading status data (see "Write Operaion Ststus"). 2. Illustratin shows device in word mode. ~ ~ ~ ~ PRELIMINARY (March, 2005, Version 0.0) 33 AMIC Technology, Corp. A81L801 Timing Waveforms for Data Polling (During Embedded Algorithms) tRC Addresses VA tACC tCE_F ~ ~ VA VA CE_F tCH OE tOEH WE tDF tOH High-Z I/O7 Complement Complement True Valid Data ~ ~ ~ ~ ~ ~ tOE ~~ ~~ High-Z High-Z tBUSY RY/BY Status Data ~ ~ I/O0 - I/O6 Status Data True Valid Data Note : VA = Valid Address. Illustation shows first status cycle after command sequence, last status read cycle, and array data read cycle. ~ ~ PRELIMINARY (March, 2005, Version 0.0) 34 AMIC Technology, Corp. A81L801 Timing Waveforms for Toggle Bit (During Embedded Algorithms) tRC Addresses VA tACC tCE_F VA ~ ~ VA VA CE_F tCH OE tOEH WE tOE tDF tOH I/O6 , I/O2 High-Z tBUSY Valid Status (first read) Valid Status (second read) ~ ~ ~~ ~~ Valid Status (stop togging) ~~ ~~ Valid Data RY/BY Note: VA = Valid Address; not required for I/O6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle. Timing Waveforms for Sector Protect/Unprotect VID RESET VIH SA, A6, A1, A0 Valid* Sector Protect/Unprotect ~ ~ ~ ~ Valid* Valid* ~ ~ Verify Data 1us 60h 60h Sector Protect:150us Sector Unprotect:15ms ~ ~ 40h Status CE_F WE OE Note : For sector protect, A6=0, A1=1, A0=0. For sector unprotect, A6=1, A1=1, A0=0 ~ ~ PRELIMINARY (March, 2005, Version 0.0) 35 AMIC Technology, Corp. A81L801 Timing Waveforms for I/O2 vs. I/O6 ~ ~ ~ ~ ~ ~ ~ ~ WE Erase Erase Suspend Read Erase Suspend Program Erase Suspend Read Erase ~ ~ Erase Complete Enter Embedded Erasing Erase Suspend Enter Erase Suspend Program Erase Resume ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ I/O6 ~ ~ ~ ~ I/O2 I/O2 and I/O6 toggle with OE and CE_F Note : Both I/O6 and I/O2 toggle with OE or CE_F. See the text on I/O6 and I/O2 in the section "Write Operation Status" for more information. AC Characteristics Erase and Program Operations Alternate CE_F Controlled Writes (TA=0°C to 70°C or -25°C to + 85°C for –I) Parameter JEDEC tAVAV tAVEL tELAX tDVEH tEHDX Description Std tWC tAS tAH tDS tDH tOES Write Cycle Time (Note 1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write ( OE High to WE Low) Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Byte Word Typ. Typ. Typ. ~ ~ Speed -70 70 0 45 35 0 0 0 0 0 35 30 5 7 0.7 sec ns ns ns ns ns ns ns ns ns ns ns µs ~ ~ Unit tGHEL tWLEL tEHWH tELEH tEHEL tWHWH1 tWHWH2 tGHEL tWS tWH tCP tCPH tWHWH1 tWHWH2 WE Setup Time WE Hold Time CE Pulse Width CE Pulse Width High Programming Operation (Note 2) Sector Erase Operation (Note 2) Notes: 1. Not 100% tested. 2. See the "Erase and Programming Performance" section for more information. PRELIMINARY (March, 2005, Version 0.0) 36 AMIC Technology, Corp. A81L801 Timing Waveforms for Alternate CE_F Controlled Write Operation 555 for program 2AA for erase PA for program SA for sector erase 555 for chip erase Data Polling ~ ~ Addresses tWC tWH WE OE tAS PA CE_F tWS tDS tCPH tBUSY tDH Data tRH ~ ~ ~ ~ tCP tWHWH1 or 2 ~ ~ ~ ~ tAH ~ ~ I/O7 DOUT A0 for program 55 for erase RESET RY/BY Note : 1. PA = Program Address, PD = Program Data, SA = Sector Address, I/O7 = Complement of Data Input, DOUT = Array Data. 2. Figure indicates the last two bus cycles of the command sequence. Erase and Programming Performance Parameter Sector Erase Time Chip Erase Time Byte Programming Time Word Programming Time Chip Programming Time (Note 3) Byte Mode Word Mode Typ. (Note 1) 1.0 35 35 12 11 7.2 Max. (Note 2) 8 300 500 33 21.6 ~ ~ ~ ~ PD for program 30 for sector erase 10 for chip erase Unit sec sec µs µs sec sec Comments Excludes 00h programming prior to erasure Excludes system-level overhead (Note 5) Notes: 1. Typical program and erase times assume the following conditions: 25°C, 3.0V VCC_F, 10,000 cycles. Additionally, programming typically assumes checkerboard pattern. 2. Under worst case conditions of 90°C, VCC_F = 2.7V, 100,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then does the device set I/O5 = 1. See the section on I/O5 for further information. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 5 for further information on command definitions. 6. The device has a guaranteed minimum erase and program cycle endurance of 10,000 cycles. PRELIMINARY (March, 2005, Version 0.0) 37 AMIC Technology, Corp. A81L801 SRAM DC Electrical Characteristics Symbol Parameter Min. ⎜ILI⎥ Input Leakage Current (TA = -25°C to +85°C, VCC_S = 2.7V to 3.6V, GND = 0V) 70ns Max. 1 Unit Conditions µA VIN = GND to VCC_S ⎜ILO⎥ Output Leakage Current CE_S = VIH 1 µA or OE = VIH or W E = VIL VI/O = GND to VCC_S ICC Active Power Supply Current - 3 mA CE_S = VIL II/O = 0mA Min. Cycle, Duty = 100% CE_S = VIL, CE2 = VIH II/O = 0mA ICC1 Dynamic Operating Current ICC2 - 30 mA CE_S = VIL 3 mA VIH = VCC_S, VIL = 0V f = 1 MHZ, II/O = 0mA VCC_S ≤ 3.3V, CE_S = VIH VCC_S ≤ 3.3V, ISB ISB1 Standby Power Supply Current - 0.5 5 mA µA CE_S ≥ VCC_S - 0.2V or VIN ≥ 0V VOL VOH Output Low Voltage Output High Voltage 2.2 0.4 V V IOL = 2.1mA IOH = -1.0mA Truth Table Mode CE_S H X OE X X H L X WE X X H H L I/O Operation High Z High Z High Z DOUT DIN Supply Current ISB, ISB1 ISB, ISB1 ICC, ICC1, ICC2 ICC, ICC1, ICC2 ICC, ICC1, ICC2 Standby Output Disable Read Write Note: X = H or L L L L PRELIMINARY (March, 2005, Version 0.0) 38 AMIC Technology, Corp. A81L801 Capacitance (TA = 25°C, f = 1.0MHz) Symbol CIN* CI/O* Parameter Input Capacitance Input/Output Capacitance Min. Max. 6 8 Unit pF pF Conditions VIN = 0V VI/O = 0V * These parameters are sampled and not 100% tested. AC Characteristics Symbol (TA = -25°C to +85°C, VCC_S = 2.7V to 3.6V) Parameter Min. 70 ns Max. Unit Read Cycle tRC tAA tACE1_S tOE tCLZ1 tOLZ tCHZ1 tOHZ tOH Write Cycle tWC tCW tAS tAW tWP tWR tWHZ tDW tDH tOW Write Cycle Time Chip Enable to End of Write Address Setup Time Address Valid to End of Write Write Pulse Width Write Recovery Time Write to Output in High Z Data to Write Time Overlap Data Hold from Write Time Output Active from End of Write 70 60 0 60 50 0 0 30 0 5 25 ns ns ns ns ns ns ns ns ns ns Read Cycle Time Address Access Time Chip Enable Access Time Output Enable to Output Valid Chip Enable to Output in Low Z Output Enable to Output in Low Z Chip Disable to Output in High Z Output Disable to Output in High Z Output Hold from Address Change 70 70 70 35 25 25 ns ns ns ns ns ns ns ns ns CE_S - CE_S 10 5 CE_S 0 0 10 Notes: tCHZ1, tOHZ, and tWHZ are defined as the time at which the outputs achieve the open circuit condition and are not referred to output voltage levels. PRELIMINARY (March, 2005, Version 0.0) 39 AMIC Technology, Corp. A81L801 SRAM Timing Waveforms Read Cycle 1 (1, 2, 4) tRC Address tAA tOH tOH DOUT Read Cycle 2 (1, 3, 4, 6) CE_S tACE1 tCLZ15 tCHZ15 DOUT PRELIMINARY (March, 2005, Version 0.0) 40 AMIC Technology, Corp. A81L801 Timing Waveforms (continued) Read Cycle 3 (1) tRC Address tAA OE tOE tOLZ 5 tOH CE_S tACE1 tACE2 tCLZ25 tCHZ25 tOHZ5 DOUT Notes: 1. W E is high for Read Cycle. 2. Device is continuously enabled CE_S = VIL. 3. Address valid prior to or coincident with CE_S transition low. 4. OE = VIL. 5. Transition is measured ±500mV from steady state. This parameter is sampled and not 100% tested. 6. CE_S is low. Write Cycle 1 (6) (Write Enable Controlled) tWC Address tAW tCW5 tWR3 CE_S (4) tAS1 tWP2 WE tDW tDH DIN tWHZ tOW DOUT PRELIMINARY (March, 2005, Version 0.0) 41 AMIC Technology, Corp. A81L801 Timing Waveforms (continued) Write Cycle 2 (Chip Enable Controlled) tWC Address tAW tCW5 tWR3 CE_S tAS1 (4) tCW5 WE tDW tDH DIN tWHZ7 DOUT Notes: 1. tAS is measured from the address valid to the beginning of Write. 2. A Write occurs during the overlap (tWP) of a low CE_S , and a low W E . 3. tWR is measured from the earliest of CE_S or W E going high going low to the end of the Write cycle. 4. If the CE_S low transition occurs simultaneously with the WE low transition or after the W E transition, outputs remain in a high impedance state. 5. tCW is measured from the later of CE_S going low going high to the end of Write. 6. OE is continuously low. ( OE = VIL) 7. Transition is measured ±500mV from steady state. This parameter is sampled and not 100% tested. PRELIMINARY (March, 2005, Version 0.0) 42 AMIC Technology, Corp. A81L801 AC Test Conditions Input Pulse Levels Input Rise and Fall Time Input and Output Timing Reference Levels Output Load 0.4V to 2.4V 5 ns 1.5V See Figures 7 and 8 TTL TTL CL 30pF CL 5pF * Including scope and jig. * Including scope and jig. Figure 7. Output Load Figure 8. Output Load for tCLZ1, tCLZ2, tOHZ, tOLZ, tCHZ1 tWHZ, and tOW Retention Characteristics (TA = -25°C to 85°C) Symbol VDR1 Parameter VCC for Data Retention Min. 2.0 Max. 3.6 Unit V Conditions CE_S ≥ VCC_S - 0.2V VCC_S = 1.5V, ICCDR1 Data Retention Current - 1* µA CE_S ≥ VCC - 0.2V, VIN ≥ 0V ICCDR2 tCDR tR * Chip Disable to Data Retention Time Operation Recovery Time ICCDR: max. 0 5 1* - µA VCC_S = 1.5V, VIN ≥ 0V See Retention Waveform ns ms 55 ns – 70 ns 1µA at TA = 0°C to + 40°C PRELIMINARY (March, 2005, Version 0.0) 43 AMIC Technology, Corp. A81L801 Low VCC Data Retention Waveform (1) ( CE_S Controlled) DATA RETENTION MODE VCC_S 3.0V tCDR VDR ≥ 1.5V 3.0V tR CE_S VIH CE_S ≥ VDR - 0.2V VIH PRELIMINARY (March, 2005, Version 0.0) 44 AMIC Technology, Corp. A81L801 Ordering Information Top Boot Sector Flash & SRAM Part No. Access Time (ns) Active Read Current Typ. (mA) Program/Erase Current Typ. (mA) Standby Current Typ. (µA) Package A81L801TG-70 A81L801TG-70F 70 A81L801TG-70I A81L801TG-70IF Note: Industrial operating temperature range: -25°C to 85°C for –I 9 20 0.2 69-ball FBGA 69-ball Pb-Free FBGA 69-ball FBGA 69-ball Pb-Free FBGA Bottom Boot Sector Flash & SRAM Part No. Access Time (ns) Active Read Current Typ. (mA) Program/Erase Current Typ. (mA) Standby Current Typ. (µA) Package A81L801UG-70 A81L801UG-70F 70 A81L801UG-70I A81L801UG-70IF Note: Industrial operating temperature range: -25°C to 85°C for –I 9 20 0.2 69-ball FBGA 69-ball Pb-Free FBGA 69-ball FBGA 69-ball Pb-Free FBGA PRELIMINARY (March, 2005, Version 0.0) 45 AMIC Technology, Corp. A81L801 Package Information 69LD STF BGA (8 x 11mm) Outline Dimensions Pin #1 -AD aaa -BD1 e unit: mm K J H G F E D C B A aaa 1 2 3 4 5 6 7 8 9 10 See Detail B ddd M C eee M C A B See Detail A CAVITY // bbb C A2 C B A c A b -Cccc C SOLDER BALL SEATING PLANE Detail A A1 1 2 3 Detail B Symbol A A1 A2 c D E D1 E1 e b aaa bbb ccc ddd eee MD/ME Dimensions in mm Min Nom Max 1.40 0.25 0.30 0.35 0.91 0.96 1.01 0.22 0.26 0.30 7.90 8.00 8.10 10.90 11.00 11.10 7.20 7.20 0.80 0.35 0.40 0.45 0.15 0.20 0.12 0.15 0.08 10/10 Dimensions in inches Min Nom Max 0.055 0.010 0.012 0.014 0.036 0.038 0.040 0.009 0.010 0.012 0.311 0.315 0.319 0.429 0.433 0.437 0.283 0.283 0.031 0.14 0.16 0.18 0.006 0.008 0.005 0.006 0.003 10/10 Notes: 1. PRIMARY DATUM C AND SEATING PLANE ARE DEFINED BY THE SPHERICAL CROWNS OF THE SOLDER BALLS. 2. DIMENSION b IS MEASURED AT THE MAXIMUM SOLDER BALL DIAMETER, PARALLEL TO PRIMARY DATUM C. 3. THERE SHALL BE A MINIMUM CLEARANCE OF 0.25mm BETWEEN THE EDGE OF THE SOLDER BALL AND THE BODY EDGE. 4. REFERENCE DOCUMENT : JEDEC MO-219 5. THE PATTERN OF PIN 1 FIDUCIAL IS FOR REFERENCE ONLY. PRELIMINARY (March, 2005, Version 0.0) 46 AMIC Technology, Corp. E1 E