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LP61L1008X-15

LP61L1008X-15

  • 厂商:

    AMICC(欧密格)

  • 封装:

  • 描述:

    LP61L1008X-15 - 128K X 8 BIT 3.3V HIGH SPEED CENTER POWER CMOS SRAM - AMIC Technology

  • 数据手册
  • 价格&库存
LP61L1008X-15 数据手册
LP61L1008 Series 128K X 8 BIT 3.3V HIGH SPEED CENTER POWER CMOS SRAM Document Title 128K X 8 BIT 3.3V HIGH SPEED CENTER POWER CMOS SRAM Revision History Rev. No. 2.0 History Add Product Family and 32-pin sTSOP (Type I) package Issue Date June 11, 2002 Remark (June, 2002, Version 2.0) AMIC Technology, Inc. LP61L1008 Series 128K X 8 BIT 3.3V HIGH SPEED CENTER POWER CMOS SRAM Features n Single 3.3V ± 10% power supply n Access times: 12/15 ns (max.) n Current: Operating: 180mA (max.) Standby: 5mA (max.) n Full static operation, no clock or refreshing required n All inputs and outputs are directly TTL compatible n Center Power/Ground Pin Configuration n Common I/O using three-state output n Output enable and two chip enable inputs for easy application n Data retention voltage: 2.0V (min.) n Available in 32-pin SOJ 300 mil and 32-pin sTSOP packages General Description The LP61L1008 is a high speed 1,048,576-bit static random access memory organized as 131,072 words by 8 bits and operates on a single 3.3V power supply. Inputs and three-state outputs are TTL compatible and allow for direct interfacing with common system bus structures. The chip enable input is provided for POWER-DOWN and device enable and an output enable input is included for easy interfacing. Data retention is guaranteed at a power supply voltage as low as 2.0V. Product Family Product Family LP61L1008 Operating Temperature 0°C~70°C VCC Range 3.0V~3.6V Power Dissipation Speed 12/15 ns Data Retention (ICCDR, Typ.) 10µA Standby (ISB1, Typ.) 20µA Operating (ICC2, Typ.) 66mA Package Type 32L SOJ 32L sTSOP 1. Typical values are measured at VCC = 3.0V, TA = 25°C and not 100% tested. 2. Data retention current VCC = 2.0V. Pin Configuration n SOJ A0 A1 A2 A3 CE I/O1 I/O2 VCC GND I/O3 I/O4 WE A4 A5 A6 A7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A16 A0 A1 A2 A3 CE I/O0 I/O1 VCC VSS I/O2 I/O3 WE A4 A5 A6 A7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 n sTSOP ~ A15 A14 A13 OE I/O8 I/O7 GND VCC I/O6 I/O5 A12 A11 A10 A9 A8 LP61L1008X ~ ~ 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A16 A15 A14 A13 OE I/O7 I/O6 VSS VCC I/O5 I/O4 A12 A11 A10 A9 A8 LP61L1008S (June, 2002, Version 2.0) 1 AMIC Technology, Inc. LP61L1008 Series Block Diagram A0 VCC GND 256 X 4096 DECODER MEMORY ARRAY A14 A15 A16 I/O1 INPUT DATA CIRCUIT I/O8 COLUMN I/O CE OE WE CONTROL CIRCUIT Pin Description Pin No. 1 - 4, 13 - 21, 29- 32 12 28 5 6 –7, 10 - 11, 22 – 23, 26 - 27 8, 24 9, 25 Symbol A0 - A16 Description Address Inputs WE OE CE I/O1 - I/O8 Write Enable Output Enable Chip Enable Data Input/Outputs VCC GND Power Supply Ground (June, 2001, Version 2.0) 2 AMIC Technology, Inc. LP61L1008 Series Recommended DC Operating Conditions (TA = 0°C to + 70°C) Symbol VCC GND VIH VIL CL TTL Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Output Load Output Load Min. 3.0 0 2.2 -0.3 Typ. 3.3 0 0 Max. 3.6 0 VCC + 0.3 +0.8 30 1 Unit V V V V pF - Absolute Maximum Ratings* VCC to GND .............................................. -0.5V to +4.6V IN, IN/OUT Volt to GND .....................-0.5V to VCC +0.5V Operating Temperature, Topr ...................... 0°C to +70°C Storage Temperature, Tstg..................... -55°C to +125°C Temperature Under Bias, Tbias................ -10°C to +85°C Power Dissipation, Pt................................................1.0W Soldering Temp. & Time .............................260°C, 10 sec *Comments Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to this device. These are stress ratings only. Functional operation of this device at these or any other conditions above those indicated in the operational sections of this specification is not implied or intended. Exposure to the absolute maximum rating conditions for extended periods may affect device reliability. DC Electrical Characteristics Symbol ILI ILO (TA = 0°C to + 70°C, VCC = 3.3V ± 10%, GND = 0V) LP61L1008-12/15 Unit Min. Max. 2 µA µA VIN = GND to VCC CE = VIH or Conditions Parameter Input Leakage Current Output Leakage Current -12 -15 - 2 180 170 20 5 0.4 - OE = VIH or W E = VIL VI/O = GND to VCC CE = VIL II/O = 0 mA CE = VIH CE ≥ VCC - 0.2V, VIN ≤ 0.2V or VIN ≥ VCC - 0.2V IOL = 8 mA IOH = -4 mA ICC1 (1) ISB ISB1 VOL VOH Dynamic Operating Current mA mA mA V V Standby Power Supply Current Output Low Voltage Output High Voltage 2.4 Note: 1. ICC1 is dependent on output loading, cycle rates, and Read / Write patterns. (June, 2001, Version 2.0) 3 AMIC Technology, Inc. LP61L1008 Series Truth Table Mode Standby Output Disable Read Write Note: X = H or L CE H L L L OE X H L X WE X H H L I/O Operation High Z High Z DOUT DIN Supply Current ISB, ISB1 ICC1 ICC1 ICC1 Capacitance (TA = 25°C, f = 1.0MHz) Symbol CIN* CI/O* Parameter Input Capacitance Input/Output Capacitance Min. Max. 8 10 Unit pF pF Conditions VIN = 0V VI/O = 0V * These parameters are sampled and not 100% tested. AC Characteristics (TA = 0°C to +70°C, VCC = 3.3V ± 10%, GND = 0V) Symbol Parameter LP61L1008-12 Min. Read Cycle tRC tAA tACE tOE tCLZ tOLZ tCHZ tOHZ tOH Read Cycle Time Address Access Time Chip Enable Access Time Output Enable to Output Valid Chip Enable to Output in Low Z Output Enable to Output in Low Z Chip Disable to Output in High Z Output Disable to Output in High Z Output Hold from Address Change CE CE CE 12 3 2 2 2 12 12 7 7 7 15 5 2 2 5 15 15 9 10 9 ns ns ns ns ns ns ns ns ns Max. LP61L1008-15 Min. Max. Unit (June, 2001, Version 2.0) 4 AMIC Technology, Inc. LP61L1008 Series AC Characteristics (continued) Symbol Parameter LP61L1008-12 Min. Write Cycle tWC tCW tAS tAW tWP tWR tWHZ tDW tDH tOW Write Cycle Time Chip Enable to End of Write Address Setup Time of Write Address Valid to End of Write Write Pulse Width Write Recovery Time Write to Output in High Z Data to Write Time Overlap Data Hold from Write Time Output Active from End of Write 12 10 0 10 8 0 0 8 0 5 7 15 12 0 12 10 0 0 10 0 5 8 ns ns ns ns ns ns ns ns ns ns Max. LP61L1008-15 Min. Max. Unit Notes: tCHZ1, tCHZ2, tOHZ, and tWHZ are defined as the time at which the outputs achieve the open circuit condition and are not referred to output voltage levels. Timing Waveforms Read Cycle 1 (1, 2, 4) tRC Address tAA tOH tOH DOUT (June, 2001, Version 2.0) 5 AMIC Technology, Inc. LP61L1008 Series Read Cycle 2 (1, 3, 4, 6) CE tACE tCLZ5 tCHZ5 DOUT Read Cycle 3 (1) tRC Address tAA OE tOE tOLZ5 CE tOH tACE tCHZ5 DOUT Notes: 1. W E is high for Read Cycle. 2. Device is continuously enabled CE = VI. 3. Address valid prior to or coincident with CE transition low. 4. OE = VIL. 5. Transition is measured ±500mV from steady state. This parameter is sampled and not 100% tested. (June, 2001, Version 2.0) 6 AMIC Technology, Inc. LP61L1008 Series Timing Waveforms (continued) Write Cycle 1 (Write Enable Controlled) tWC Address tAW tCW5 CE (4) tWR3 (6) tAS1 tWP2 WE tDW DIN tWHZ tDH tOW DOUT (June, 2001, Version 2.0) 7 AMIC Technology, Inc. LP61L1008 Series Timing Waveforms (continued) Write Cycle 2 (Chip Enable Controlled) tWC Address tAW tCW5 CE tAS1 (4) tWR3 tCW5 tWP2 WE tDW DIN tDH tWHZ7 DOUT Notes: 1. tAS is measured from the address valid to the beginning of Write. 2. A Write occurs during the overlap (tWP) of a low CE and a low W E . 3. tWR is measured from the earliest of CE or W E going high to the end of the Write cycle. 4. If the CE low transition with the W E low transition or after the W E transition, outputs remain in a high impedance state. 5. tCW is measured from the later of CE going low to the end of Write. 6. OE is continuously low. ( OE = VIL) 7. Transition is measured ±500mV from steady state. This parameter is sampled and not 100% tested. (June, 2001, Version 2.0) 8 AMIC Technology, Inc. LP61L1008 Series AC Test Conditions Input Pulse Levels Input Rise and Fall Time Input and Output Timing Reference Levels Output Load 0V to 3.0V 3 ns 1.5V See Figures 1 and 2 +3.3V 320Ω Output ZO=50Ω RL=50Ω VT=1.5V 350Ω 5pF* I/O * Including scope and jig. * Including scope and jig. Figure 1. Output Load Figure 2. Output Load for tCLZ, tOHZ, tOLZ, tCHZ, tWHZ, and tOW Data Retention Characteristics (TA = 0°C to 70°C) Symbol Parameter Min. Max. Unit Conditions CE ≥ VCC - 0.2V VCC = 3.0V ICCDR1 Data Retention Current 5 mA CE ≥ VCC - 0.2V VIN ≥ VCC - 0.2V or VIN ≤ 0.2V VDR1 VCC for Data Retention 2 3.6 V tCDR Chip Disable to Data Retention Time 0 - ns See Retention Waveform tR Operation Recovery Time 5 - ms (June, 2001, Version 2.0) 9 AMIC Technology, Inc. LP61L1008 Series Low VCC Data Retention Waveform ( CE Controlled) DATA RETENTION MODE VCC 3.0V tCDR VDR ≥ 2V 3.0V tR CE VIH CE ≥ VDR - 0.2V VIH Ordering Information Part No. LP61L1008S-12 LP61L1008X-12 LP61L1008S-15 LP61L1008X-15 Access Time (ns) 12 12 15 15 Operating Current Max. (mA) 180 180 170 170 Standby Current Max. (mA) 5 5 5 5 Package 32L SOJ (300 mil) 32L sTSOP (Type I) 32L SOJ (300 mil) 32L sTSOP (Type I) (June, 2001, Version 2.0) 10 AMIC Technology, Inc. LP61L1008 Series Package Information SOJ 32/32LD (300mil BODY) Outline Dimensions D 32 17 b unit: inches/mm F F DETAIL "A" BASE METAL WITH PLATING SECTION F-F 1 16 E DETAIL "A" HE b1 A2 A s SEATING PLANE b e MIN 0.026" y y e1 0.004 y Symbol A A1 A2 b b1 c D HE E e1 e s y Dimensions in inches Min. 0128 0.052 0.095 0.016 0.026 0.006 0.820 0.330 0.295 0.260 Nom. 0.132 0.100 0.018 0.028 0.008 0.825 0.335 0.300 0.267 0.050 Max. 0.140 0.105 0.020 0.032 0.012 0.830 0.340 0.305 0.274 0.048 0.004 D A1 Dimensions in mm Min. 3.25 2.08 2.41 0.41 0.66 0.15 20.83 8.39 7.49 6.61 Nom. 3.35 2.54 0.46 0.71 0.20 20.96 8.51 7.62 6.78 1.27 Max. 3.56 2.67 0.51 0.81 0.30 21.08 8.63 7.75 6.96 1.22 0.10 Notes: 1. The maximum value of dimension D includes end flash. 2. Dimension E doesn't include resin fins. 3. Dimension e1 is for PC Board surface mount pad pitch design reference only. 4. Dimension S includes end flash. (June, 2001, Version 2.0) 11 AMIC Technology, Inc. c LP61L1008 Series Package Information sTSOP 32L TYPE I (8 X 13.4mm) Outline Dimensions unit: inches/mm e A2 E A1 c θ L LE Detail "A" D1 D Detail "A" D 0.076MM S SEATING PLANE b Dimensions in inches Symbol A A1 A2 b c E e D D1 L LE S θ 0° 0.520 0.461 0.012 0.0275 Min 0.002 0.037 0.007 0.0056 0.311 Nom 0.039 0.008 0.0059 0.315 0.020 TYP 0.528 0.465 0.020 0.0315 0.0109 TYP 3° 5° 0.535 0.469 0.028 0.0355 Max 0.049 0.041 0.009 0.0062 0.319 Dimensions in mm Min 0.05 0.95 0.17 0.142 7.90 Nom 1.00 0.20 0.150 8.00 0.50 TYP 13.20 11.70 0.30 0.700 0° 13.40 11.80 0.50 0.800 0.278 TYP 3° 5° 13.60 11.90 0.70 0.900 Max 1.25 1.05 0.23 0.158 8.10 Notes: 1. The maximum value of dimension D1 includes end flash. 2. Dimension E does not include resin fins. 3. Dimension S includes end flash. (June, 2001, Version 2.0) 12 AMIC Technology, Inc. A
LP61L1008X-15 价格&库存

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