LP62S16256FV-55LLIF

LP62S16256F-I Series Preliminary Document Title 256K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. 0.0 0.1 0.2 0.3 0.4 256K X 16 BIT LOW VOLTAGE CMOS SRAM History Initial issue Change ICC2 from 15mA to 8mA Modify 48LD CSP bottom view outline drawing Modify 48LD CSP outline dimensions Add Pb-Free package type Issue Date November 22, 2002 April 18, 2003 May 5, 2003 November 19, 2003 August 9, 2004 Remark Preliminary PRELIMINARY (August, 2004, Version 0.4) AMIC Technology, Corp. LP62S16256F-I Series Preliminary Features Operating voltage: 2.7V to 3.6V Access times: 55ns / 70ns (max.) Current: Very low power version: Operating: 40mA (max.) Standby: 10µA (max.) Full static operation, no clock or refreshing required All inputs and outputs are directly TTL-compatible Common I/O using three-state output Data retention voltage: 2.0V (min.) Available in 44-pin TSOP and 48-ball CSP (6 × 8mm) packages 256K X 16 BIT LOW VOLTAGE CMOS SRAM General Description The LP62S16256F-I is a low operating current 4,194,304-bit static random access memory organized as 262,144 words by 16 bits and operates on low power voltage from 2.7V to 3.6V. It is built using AMIC's high performance CMOS process. Inputs and three-state outputs are TTL compatible and allow for direct interfacing with common system bus structures. The chip enable input is provided for POWER-DOWN, device enable. Two byte enable inputs and an output enable input are included for easy interfacing. Data retention is guaranteed at a power supply voltage as low as 2.0V. Product Family Product Family Operating Temperature -40°C ~ +85°C VCC Range 2.7V~3.6V Speed Power Dissipation Standby Operating Data Retention (ISB1, Typ.) (ICC2, Typ.) (ICCDR, Typ.) 0.08µA 0.3µA 5mA Package Type 44L TSOP 48B CSP LP62S16256F-I 55ns / 70ns 1. Typical values are measured at VCC = 3.0V, TA = 25°C and not 100% tested. 2. Data retention current VCC = 2.0V. Pin Configurations TSOP CSP (Chip Size Package) 48-pin Top View 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE HB LB I/O16 I/O15 I/O14 I/O13 GND VCC I/O12 I/O11 I/O10 I/O9 NC A8 A9 A10 A11 A12 A4 A3 A2 A1 A0 CE I/O1 I/O2 I/O3 I/O4 VCC GND I/O5 I/O6 I/O7 I/O8 WE A17 A16 A15 A14 A13 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 1 A B C D E F G H LB I/O9 I/O10 GND VCC I/O15 I/O16 NC 2 OE HB I/O11 I/O12 I/O13 I/O14 NC A8 3 A0 A3 A5 A17 NC A14 A12 A9 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE I/O2 I/O4 I/O5 I/O6 WE A11 6 NC I/O1 I/O3 VCC GND I/O7 I/O8 NC LP62S16256FV-I PRELIMINARY (August, 2004, Version 0.4) 1 AMIC Technology, Corp. LP62S16256F-I Series Block Diagram VCC GND 512 X 8192 DECODER A16 MEMORY ARRAY A0 A17 I/O1 COLUMN I/O INPUT DATA CIRCUIT I/O9 INPUT DATA CIRCUIT I/O8 I/O16 CE LB HB OE WE CONTROL CIRCUIT Pin Descriptions -- TSOP Pin No. 1 - 5, 18 - 27, 42 - 44 6 Symbol A0 - A17 Description Address Inputs CE I/O1 - I/O16 WE LB HB OE VCC GND NC Chip Enable Input 7 - 10, 13 - 16, 29 - 32, 35 - 38 17 39 40 41 11, 33 12, 34 28 Data Inputs/Outputs Write Enable Input Lower Byte Enable Input (I/O1 to I/O8) Higher Byte Enable Input (I/O9 to I/O16) Output Enable Input Power Ground No Connection PRELIMINARY (August, 2004, Version 0.4) 2 AMIC Technology, Corp. LP62S16256F-I Series Pin Description - CSP Symbol Description Symbol Description A0 - A17 Address Inputs HB Higher Byte Enable Input (I/O9 - I/O16) Output Enable Power Supply Ground No Connection CE I/O1 - I/O16 WE LB Chip Enable Data Input/Output Write Enable Input Byte Enable Input (I/O1 - I/O8) OE VCC GND NC Recommended DC Operating Conditions (TA = -40°C to + 85°C) Symbol Parameter Min. Typ. Max. Unit VCC GND VIH VIL CL TTL Supply Voltage Ground Input High Voltage Input Low Voltage Output Load Output Load 2.7 0 2.2 -0.3 - 3 0 - 3.6 0 VCC + 0.3 +0.6 30 1 V V V V pF - PRELIMINARY (August, 2004, Version 0.4) 3 AMIC Technology, Corp. LP62S16256F-I Series Absolute Maximum Ratings* VCC to GND .............................................. -0.5V to +4.0V IN, IN/OUT Volt to GND................... -0.5V to VCC + 0.5V Operating Temperature, Topr ...................-40°C to +85°C Storage Temperature, Tstg.....................-55°C to +125°C Power Dissipation, PT....................................................................... 0.7W *Comments Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to this device. These are stress ratings only. Functional operation of this device at these or any other conditions above those indicated in the operational sections of this specification is not implied or intended. Exposure to the absolute maximum rating conditions for extended periods may affect device reliability. DC Electrical Characteristics (TA = -40°C to + 85°C, VCC = 2.7V to 3.6V, GND = 0V) Symbol Parameter LP62S16256F-55LLI / 70LLI Min. ⏐ILI⏐ ⏐ILO⏐ Typ. Max. Unit Conditions Input Leakage Current - - 1 1 µA µA VIN = GND to VCC CE = VIH HB = VIH or OE = VIH or W E = VIH VI/O = GND to VCC CE = VIL, II/O = 0mA Output Leakage Current - ICC Active Power Supply Current - - 5 mA ICC1 Dynamic Operating Current ICC2 - 25 40 mA Min. Cycle, Duty = 100% CE = VI, II/O = 0mA - 5 8 mA CE = VIL, VIH = VCC, VIL = 0V, f = 1MHz, II/O = 0 mA CE = VIH VCC ≤ 3.3V CE ≥ VCC - 0.2V, VCC ≤ 3.3V VIN ≥ 0V IOL = 2.1 mA IOH = -1.0 mA ISB Standby Current - - 1 mA ISB1 - 0.3 10 µA VOL VOH Output Low Voltage Output High Voltage 2.2 - 0.4 - V V PRELIMINARY (August, 2004, Version 0.4) 4 AMIC Technology, Corp. LP62S16256F-I Series Truth Table CE H X OE X X WE X X LB X H L L L H L H L L X L L H L L H H H H L X HB X H L H L L H L X L I/O1 to I/O8 Mode Not selected High - Z Read Read High - Z Write Write High - Z High - Z High - Z I/O9 to I/O16 Mode Not selected High - Z Read High - Z Read Write High - Z Write High - Z High - Z VCC Current ISB1, ISB ISB1, ISB ICC1, ICC2, ICC ICC1, ICC2, ICC ICC1, ICC2, ICC ICC1, ICC2, ICC ICC1, ICC2, ICC ICC1, ICC2, ICC ICC1, ICC2, ICC ICC1, ICC2, ICC Note: X = H or L Capacitance (TA = 25°C, f = 1.0MHz) Symbol CIN* CI/O* Parameter Input Capacitance Input/Output Capacitance Min. Max. 6 8 Unit pF pF Conditions VIN = 0V VI/O = 0V * These parameters are sampled and not 100% tested. PRELIMINARY (August, 2004, Version 0.4) 5 AMIC Technology, Corp. LP62S16256F-I Series AC Characteristics (TA = -40°C to +85°C, VCC = 2.7V to 3.6V) Symbol Parameter LP62S16256F-55LLI Min. Read Cycle tRC tAA tACE tBE tOE tCLZ tBLZ tOLZ tCHZ tBHZ tOHZ tOH Write Cycle tWC tCW tBW tAS tAW tWP tWR tWHZ tDW tDH tOW Write Cycle Time Chip Enable to End of Write Byte Enable to End of Write Address Setup Time Address Valid to End of Write Write Pulse Width Write Recovery Time Write to Output in High Z Data to Write Time Overlap Data Hold from Write Time Output Active from End of Write 55 50 50 0 50 40 0 25 0 5 25 70 60 60 0 60 50 0 30 0 5 25 ns ns ns ns ns ns ns ns ns ns ns Read Cycle Time Address Access Time Chip Enable Access Time Byte Enable Access Time Output Enable to Output Valid Chip Enable to Output in Low Z Byte Enable to Output in Low Z Output Enable to Output in Low Z Chip Disable to Output in High Z Byte Disable to Output in High Z Output Disable to Output in High Z Output Hold from Address Change 55 10 10 5 5 55 55 55 30 20 20 20 70 10 10 5 5 70 70 70 35 25 25 25 ns ns ns ns ns ns ns ns ns ns ns ns Max. LP62S16256F-70LLI Min. Max. Unit Note: tCHZ, tBHZ and tOHZ and tWHZ are defined as the time at which the outputs achieve the open circuit condition and are not referred to output voltage levels. PRELIMINARY (August, 2004, Version 0.4) 6 AMIC Technology, Corp. LP62S16256F-I Series Timing Waveforms Read Cycle 1(1, 2, 4) tRC Address tAA tOH tOH DOUT Read Cycle 2(1, 2, 3) tRC Address tAA CE tACE tCLZ5 tBE tCHZ5 HB, LB tBLZ5 tBHZ5 OE tOHZ5 tOE tOLZ5 DOUT Notes: 1. W E is high for Read Cycle. 2. Device is continuously enabled CE = VIL, HB = VIL and, or LB = VIL. 3. Address valid prior to or coincident with CE and ( HB and, or LB ) transition low. 4. OE = VIL. 5. Transition is measured ±500mV from steady state. This parameter is sampled and not 100% tested. PRELIMINARY (August, 2004, Version 0.4) 7 AMIC Technology, Corp. LP62S16256F-I Series Timing Waveforms (continued) Write Cycle 1 (Write Enable Controlled) tWC Address tAW tCW CE tWR3 tBW HB, LB tAS1 tWP2 WE tDW DATA IN tWHZ4 tDH tOW DATA OUT Write Cycle 2 (Chip Enable Controlled) tWC Address tAW tAS CE 1 tCW2 tWR3 tBW HB, LB tWP WE tDW DATA IN tWHZ4 tDH tOW DATA OUT PRELIMINARY (August, 2004, Version 0.4) 8 AMIC Technology, Corp. LP62S16256F-I Series Timing Waveforms (continued) Write Cycle 3 (Byte Enable Controlled) tWC Address tAW tCW CE tWR3 tAS1 tBW2 HB, LB tWP WE tDW tDH DATA IN tWHZ4 tOW DATA OUT Notes: 1. tAS is measured from the address valid to the beginning of Write. 2. A Write occurs during the overlap (tWP, tBW) of a low CE , WE and ( HB and , or LB ). 3. tWR is measured from the earliest of CE or W E or ( HB and , or LB ) going high to the end of the Write cycle. 4. OE level is high or low. 5. Transition is measured ±500mV from steady state. This parameter is sampled and not 100% tested. PRELIMINARY (August, 2004, Version 0.4) 9 AMIC Technology, Corp. LP62S16256F-I Series AC Test Conditions Input Pulse Levels Input Rise And Fall Time Input and Output Timing Reference Levels Output Load 0.4V to 2.4V 5 ns 1.5V See Figures 1 and 2 TTL TTL CL 30pF CL 5pF * Including scope and jig. * Including scope and jig. Figure 1. Output Load Figure 2. Output Load for tCLZ, tOLZ, tCHZ, tOHZ, tWHZ, and tOW Data Retention Characteristics (TA = -40°C to 85°C) Symbol VDR Parameter VCC for Data Retention Min. 2.0 Typ. - Max. 3.6 Unit V Conditions CE ≥ VCC - 0.2V ICCDR Data Retention Current - 0.08 3* µA VCC = 2.0V, CE ≥ VCC - 0.2V VIN ≥ 0V tCDR tR tVR Chip Disable to Data Retention Time Operation Recovery Time VCC Rising Time from Data Retention Voltage to Operating Voltage ICCDR: max. 0 tRC 5 - - ns ns ms See Retention Waveform * LP62S16256F-55LLI / 70LLI 1µA at TA = 0°C to + 40°C PRELIMINARY (August, 2004, Version 0.4) 10 AMIC Technology, Corp. LP62S16256F-I Series Low VCC Data Retention Waveform 2.7V VCC tCDR VDR ≥ 2.0V tVR CE VIH CE ≥ VDR - 0.2V VIH tR DATA RETENTION MODE 2.7V Ordering Information Part No. Access Time (ns) Operating Current Max. (mA) Standby Current Max. (µA) Package LP62S16256FV-55LLI LP62S16256FV-55LLIF 55 LP62S16256FU-55LLI LP62S16256FU-55LLIF LP62S16256FV-70LLI LP62S16256FV-70LLIF 70 LP62S16256FU-70LLI LP62S16256FU-70LLIF 40 10 40 10 44L TSOP 44L Pb-Free TSOP 48L CSP 48L Pb-Free CSP 44L TSOP 44L Pb-Free TSOP 48L CSP 48L Pb-Free CSP PRELIMINARY (August, 2004, Version 0.4) 11 AMIC Technology, Corp. LP62S16256F-I Series Package Information TSOP 44L TYPE II Outline Dimensions 44 23 unit: inches/mm HE E 0.254 L L1 1 D 22 A2 A S B e y Symbol A A1 A2 B c D E e HE L L1 S y θ Dimension in inch Min. 0.002 0.037 0.010 0.721 0.396 0.455 0.016 0° Nom. 0.039 0.014 0.006 0.725 0.400 0.031 0.463 0.020 0.031 Max. 0.047 0.041 0.018 0.729 0.404 0.471 0.024 0.036 0.004 5° A1 D L L1 Dimension in mm Min. 0.05 0.95 0.25 18.31 10.06 11.56 0.40 0° Nom. 1.00 0.35 0.15 18.41 10.16 0.80 11.76 0.50 0.80 Max. 1.20 1.05 0.45 18.51 10.26 11.96 0.60 0.93 0.10 5° Notes: 1. Dimension D&E do not include interlead flash. 2. Dimension B does not include dambar protrusion/intrusion. 3. Dimension S includes end flash. PRELIMINARY (August, 2004, Version 0.4) 12 AMIC Technology, Corp. c LP62S16256F-I Series Package Information 48LD CSP ( 6 x 8 mm ) Outline Dimensions (48TFBGA) TOP VIEW BOTTOM VIEW Ball#A1 CORNER 0.10 S C 0.25 S C A B Ball*A1 CORNER 123456 b (48X) 654321 unit: mm A B C D E F G H A B C D E F G H B A 0.10 C 0.20(4X) E1 E e e D1 D SIDE VIEW // 0.25 C A2 C (0.36) SEATING PLANE A1 A Symbol A A1 A2 D E D1 E1 e b Dimensions in mm MIN. 1.00 0.20 0.48 5.90 7.90 ------0.30 NOM. 1.10 0.25 0.53 6.00 8.00 3.75 5.25 0.75 0.35 MAX. 1.20 0.30 0.58 6.10 8.10 ------0.40 Note: 1. THE BALL DIAMETER, BALL PITCH, STAND-OFF & PACKAGE THICKNESS ARE DIFFERENT FROM JEDEC SPEC MO192 (LOW PROFILE BGA FAMILY). 2. PRIMARY DATUM C AND SEATING PLANE ARE DEFINED BY THE SPHERICAL CROWNS OF THE SOLDER BALLS. 3. DIMENSION b IS MEASURED AT THE MAXIMUM. THERE SHALL BE A MINIMUM CLEARANCE OF 0.25mm BETWEEN THE EDGE OF THE SOLDER BALL AND THE BODY EDGE. 4. BALL PAD OPENING OF SUBSTRATE IS Φ 0.3mm (SMD) SUGGEST TO DESIGN THE PCB LAND SIZE AS Φ 0.3mm (NSMD) PRELIMINARY (August, 2004, Version 0.4) 13 AMIC Technology, Corp.