ART1K6FH; ART1K6FHS;
ART1K6FHG
Power LDMOS transistor
Rev. 3 — 8 July 2022
Product data sheet
1. Product profile
1.1 General description
Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor
has been designed to cover a wide range of applications for ISM, broadcast and
communications. The unmatched transistor has a frequency range of 1 MHz to 425 MHz.
Table 1.
Application information
Test signal
f
VDS
PL
Gp
D
(MHz)
(V)
(W)
(dB)
(%)
[1]
108
50
1400
28.7
77.3
CW pulsed [1]
108
55
1600
29.5
76.0
[2]
352
50
1200
20.0
68.0
CW pulsed
CW pulsed
[1]
Production circuit: tp = 100 s; = 10 %.
[2]
Application circuit: tp = 100 s; = 10 %.
1.2 Features and benefits
High breakdown voltage enables class E operation at VDS = 48 V
Suitable for VDS = 50 and 55 V
Qualified up to a maximum of VDS = 55 V
Characterized from 30 V to 55 V for extended power range
Easy power control
Integrated dual sided ESD protection enables class C operation and complete switch
off of the transistor
Excellent ruggedness with no device degradation
High efficiency
Excellent thermal stability
Designed for broadband operation
For RoHS compliance see the product details on the Ampleon website
ART1K6FH(S)(G)
Power LDMOS transistor
1.3 Applications
Industrial, scientific and medical applications
Plasma generators
MRI systems
CO2 lasers
Particle accelerators
Broadcast
FM radio
VHF TV
Communications
Non cellular communications
UHF radar
2. Pinning information
Table 2.
Pin
Pinning
Description
Simplified outline
Graphic symbol
ART1K6FH (SOT539AN)
1
drain1
2
drain2
3
gate1
4
gate2
5
source
1
1
2
5
3
5
3
4
4
[1]
2
sym117
ART1K6FHS (SOT539BN)
1
drain1
2
drain2
3
gate1
4
gate2
5
source
1
1
2
5
3
3
5
4
4
[1]
2
sym117
ART1K6FHG (SOT1248C)
1
drain1
2
drain2
3
gate1
4
gate2
5
source
1
1
2
5
3
4
3
5
4
[1]
2
sym117
[1]
Connected to flange.
ART1K6FH_1K6FHS_1K6FHG
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Product data sheet
Rev. 3 — 8 July 2022
© Ampleon Netherlands B.V. 2022. All rights reserved.
2 of 17
ART1K6FH(S)(G)
Power LDMOS transistor
3. Ordering information
Table 3.
Ordering information
Package name
Orderable part number
12NC
Packing description
Min. orderable
quantity (pieces)
SOT539AN
ART1K6FHU
9349 603 27122 Tray; 20-fold; non-dry pack
60
SOT539BN
ART1K6FHSU
9349 605 33112 Tray; 20-fold; non-dry pack
60
SOT1248C
ART1K6FHGJ
9349 605 34118 TR13; 100-fold; 56 mm; non-dry pack
100
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
-
177
V
VGS
gate-source voltage
9
+13
V
Tstg
storage temperature
65
+150
C
-
225
C
junction temperature
Tj
[1]
[1]
Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF
calculator.
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Typ
Tj = 95 C
Rth(j-c)
thermal resistance from junction to case
Zth(j-c)
transient thermal impedance from junction Tj = 95 C; tp = 100 s;
to case
= 10 %
[1]
Tj is the junction temperature.
[2]
Rth(j-c) is measured under RF conditions.
[3]
See Figure 1.
ART1K6FH_1K6FHS_1K6FHG
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 3 — 8 July 2022
Unit
[1][2]
0.077 K/W
[3]
0.018 K/W
© Ampleon Netherlands B.V. 2022. All rights reserved.
3 of 17
ART1K6FH(S)(G)
Power LDMOS transistor
amp01731
0.1
Zth(j-c)
(K/W)
0.08
(7)
(6)
(5)
(4)
(3)
(2)
(1)
0.06
0.04
0.02
0
10-7
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
10
(1) = 1 %
(2) = 2 %
(3) = 5 %
(4) = 10 %
(5) = 20 %
(6) = 50 %
(7) = 100 % (DC)
Fig 1.
Transient thermal impedance from junction to case as a function of pulse
duration
ART1K6FH_1K6FHS_1K6FHG
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Product data sheet
Rev. 3 — 8 July 2022
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ART1K6FH(S)(G)
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 5.5 mA
Min
Typ
Max Unit
177
191
-
V
VGS(th)
gate-source threshold voltage
VDS = 20 V; ID = 550 mA
1.5
2.1
2.5
V
IDSS
drain leakage current
VGS = 0 V; VDS = 50 V
-
-
2.8
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 20 V
-
81
-
A
IGSS
gate leakage current
VGS = 13 V; VDS = 0 V
-
-
280
nA
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 19.25 A
-
0.084 -
Table 7.
AC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol
Parameter
Conditions
Crs
feedback capacitance
VGS = 0 V; f = 1 MHz
Ciss
Coss
input capacitance
Min
Typ
Max
Unit
VDS = 50 V
-
1.71
-
pF
VDS = 55 V
-
1.65
-
pF
VDS = 50 V
-
620
-
pF
VDS = 55 V
-
620
-
pF
VDS = 50 V
-
193
-
pF
VDS = 55 V
-
185
-
pF
VGS = 0 V; f = 1 MHz
output capacitance
VGS = 0 V; f = 1 MHz
amp01456
1600
Coss
(pF)
1200
800
400
0
0
10
20
30
40
50
VDS (V)
60
VGS = 0 V; f = 1 MHz
Fig 2.
Output capacitance as a function of drain-source voltage; typical values per
section
ART1K6FH_1K6FHS_1K6FHG
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Product data sheet
Rev. 3 — 8 July 2022
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5 of 17
ART1K6FH(S)(G)
Power LDMOS transistor
Table 8.
RF characteristics
Test signal: pulsed RF; tp = 100 s; = 5 %; f = 108 MHz; RF performance at VDS = 55 V;
IDq = 50 mA per section; Tcase = 25 C; unless otherwise specified; in a class-AB production test
circuit.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL = 1600 W
27
28.0
-
dB
RLin
input return loss
PL = 1600 W
-
16
-
dB
D
drain efficiency
PL = 1600 W
71
74
-
%
7. Test information
7.1 Ruggedness in class-AB operation
The ART1K6FH, ART1K6FHS and ART1K6FHG are capable of withstanding a load
mismatch corresponding to VSWR 65 : 1 through all phases under the following
conditions: PL = 1400 W pulsed at VDS = 50 V and PL = 1600 W pulsed at VDS = 55 V;
IDq = 100 mA per section; tp = 100 s; = 10 %; f = 108 MHz.
7.2 Impedance information
drain 1
gate 1
Zi
ZL
gate 2
drain 2
amp01314
Fig 3.
Definition of transistor impedance
Table 9.
Typical push-pull impedance
Simulated Zi and ZL device impedance.
f
Zi
ZL
PL
(MHz)
()
()
(W)
2.4 j8.7
3.3 + j0.7
1400
2.4 j8.7
3.5 + j0.8
1600
VDS = 50 V
108
VDS = 55 V
108
ART1K6FH_1K6FHS_1K6FHG
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Product data sheet
Rev. 3 — 8 July 2022
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ART1K6FH(S)(G)
Power LDMOS transistor
7.3 Test circuit
200.3 mm
C27
-
C8
C1
C2
L3
C10
R5/R6
C12 C16
C19
C15
C5
C4
T2
L1
C6 R1
90 mm
R3
+
C14
C3
C20
C25
C18
C13 R7/R8
T1
C9
C11
C7 R2
L2
C28
12.0 mm
-
C24
C22
C21
C23
C26
C17
L4
R4
+
32.6 mm
amp01457
12.0 mm
46.0 mm
73.0 mm
Printed-Circuit Board (PCB): RF-35; r = 3.5 F/m; thickness = 0.762 mm.
See Table 10 for a list of components.
Fig 4.
Component layout
Table 10. List of components
For test circuit see Figure 4.
Component
Description
Value
Remarks
C1, C26
multilayer ceramic chip capacitor
470 pF
[1]
C2, C3
multilayer ceramic chip capacitor
68 pF
[1]
C4
multilayer ceramic chip capacitor
43 pF
[1]
C5
multilayer ceramic chip capacitor
240 pF
[1]
C6, C7
multilayer ceramic chip capacitor
4.7 F, 50 V
Murata: GRM32ER71H475KA88L
C8, C9, C10, C11
multilayer ceramic chip capacitor
820 pF
[1]
C12, C13
multilayer ceramic chip capacitor
180 pF
[1]
C14, C15
multilayer ceramic chip capacitor
39 pF
[1]
C16, C17
multilayer ceramic chip capacitor
4.7 F, 100 V
TDK: C5750X7R2A475KT/A
C18, C19
multilayer ceramic chip capacitor
56 pF
[1]
C20, C21
multilayer ceramic chip capacitor
51 pF
[1]
C22, C23
multilayer ceramic chip capacitor
120 pF
[1]
C24, C25
multilayer ceramic chip capacitor
20 pF
[1]
C27, C28
electrolytic capacitor
2200 F, 100 V
L1, L2
air inductor
47 nH
Coilcraft: 1515SQ-47N
L3, L4
air inductor
82 nH
Coilcraft: 1515SQ-82N
R1, R2
resistor
4.7 k
SMD 1206
ART1K6FH_1K6FHS_1K6FHG
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Product data sheet
Rev. 3 — 8 July 2022
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ART1K6FH(S)(G)
Power LDMOS transistor
Table 10. List of components …continued
For test circuit see Figure 4.
Component
Description
Value
Remarks
R3, R4
resistor
0.01
Vishay: WSHP2818
R5, R6, R7, R8
resistor
9.1
SMD 1206
T1, T2
semi rigid coax
50 , 160 mm
EZ141-AL-TP/M17
[1]
American Technical Ceramics type 100B or capacitor of same quality.
7.4 Graphical data
amp01458
32
80
ηD
Gp
(dB)
30
ηD
(%)
60
Gp
28
40
26
20
24
0
400
800
1200
1600
PL (W)
0
2000
VDS = 55 V; IDq = 100 mA per section; f = 108 MHz;
tp = 100 s; = 10 %.
VDS = 55 V; IDq = 100 mA per section; f = 108 MHz;
tp = 100 s; = 10 %.
(1) PL(1dB) = 62.17 dBm (1650 W)
(2) PL(3dB) = 62.67 dBm (1850 W)
Fig 5.
Power gain and drain efficiency as function of
output power; typical values
Fig 6.
Output power as a function of input power;
typical values
ART1K6FH_1K6FHS_1K6FHG
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Product data sheet
Rev. 3 — 8 July 2022
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8 of 17
ART1K6FH(S)(G)
Power LDMOS transistor
amp01460
32
amp01461
100
ηD
(%)
Gp
(dB)
30
(1)
(2)
(3)
(4)
(5)
80
28
60
(5)
(4)
(3)
(2)
(1)
26
40
24
20
22
0
0
400
800
1200
1600
PL (W)
2000
0
VDS = 55 V; f = 108 MHz; tp = 100 s; = 10 %.
400
800
1200
(1) IDq = 50 mA per section
(2) IDq = 100 mA per section
(2) IDq = 100 mA per section
(3) IDq = 200 mA per section
(3) IDq = 200 mA per section
(4) IDq = 400 mA per section
(4) IDq = 400 mA per section
(5) IDq = 600 mA per section
(5) IDq = 600 mA per section
Power gain as a function of output power;
typical values
2000
VDS = 55 V; f = 108 MHz; tp = 100 s; = 10 %.
(1) IDq = 50 mA per section
Fig 7.
1600
PL (W)
Fig 8.
Drain efficiency as a function of output power;
typical values
ART1K6FH_1K6FHS_1K6FHG
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Product data sheet
Rev. 3 — 8 July 2022
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9 of 17
ART1K6FH(S)(G)
Power LDMOS transistor
amp01462
32
amp01463
100
ηD
(%)
Gp
(dB)
(6)
80
(5)
(4)
(3)
(2)
(1)
29.5
60
27
(4)
(3)
(2)
(1)
40
(5)
(6)
24.5
20
22
0
0
400
800
1200
1600
PL (W)
2000
0
IDq = 100 mA per section; f = 108 MHz; tp = 100 s;
= 10 %.
400
(1) VDS = 55 V
(2) VDS = 50 V
(2) VDS = 50 V
(3) VDS = 45 V
(3) VDS = 45 V
(4) VDS = 40 V
(4) VDS = 40 V
(5) VDS = 35 V
(5) VDS = 35 V
(6) VDS = 30 V
(6) VDS = 30 V
Power gain as a function of output power;
typical values
1200
1600
PL (W)
2000
IDq = 100 mA per section; f = 108 MHz; tp = 100 s;
= 10 %.
(1) VDS = 55 V
Fig 9.
800
Fig 10. Drain efficiency as a function of output power;
typical values
ART1K6FH_1K6FHS_1K6FHG
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Product data sheet
Rev. 3 — 8 July 2022
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10 of 17
ART1K6FH(S)(G)
Power LDMOS transistor
8. Package outline
Flanged balanced ceramic package; 2 mounting holes; 4 leads
SOT539AN
(note 3)
D
X
A
detail X
F
D1
U1
B
q
C
H1
w2 M C M
1
c
2
E1
p
H U2
5
L
3
A
E
w1 M A M B M
4
w3 M
b
Q
e
w3
0.25
0
5
10 mm
0.01
scale
Dimensions
Unit(1)
q(2)
w1
w2
0.25
0.51
1.625 0.405
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375
0.069 0.674 1.005 0.137 0.130 0.089
1.400
0.54
inches nom
0.01
1.615 0.395
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365
0.059 0.634 0.995 0.117 0.120 0.079
0.02
mm
max
nom
min
A
b
c
D
D1
E
E1
4.7
11.81 0.18 31.55 31.52
9.5
9.53
4.2
11.56 0.10 30.94 30.96
9.3
9.27
e
F
H
H1
p
Q
1.75 17.12 25.53 3.48
3.30
2.26
1.50 16.10 25.27 2.97
3.05
2.01
L
41.02 10.03
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
3. ceramic window frame has a minimum thickness of 0.400 mm.
References
IEC
JEDEC
U2
35.56
13.72
Outline
version
U1
41.28 10.29
JEITA
sot539an_po
European
projection
Issue date
20-04-20
SOT539AN
Fig 11. Package outline SOT539AN
ART1K6FH_1K6FHS_1K6FHG
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Product data sheet
Rev. 3 — 8 July 2022
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11 of 17
ART1K6FH(S)(G)
Power LDMOS transistor
Earless flanged balanced ceramic package; 4 leads
SOT539BN
(note 2)
D
X
A
F
5
D1
detail X
D
U1
H1
w2
1
c
D
2
E1
U2
H
E
L
3
4
w3
b
Q
e
0
5
10 mm
scale
Dimensions
Unit(1)
A
b
4.7
11.81
w2
w3
0.25
0.25
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375
0.069 0.674 1.005 0.137 0.089 1.275 0.405
0.54
inches nom
0.01
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365
0.059 0.634 0.995 0.117 0.079 1.265 0.395
0.01
mm
max
nom
min
c
D
D1
0.18 31.55 31.52
E
E1
9.5
9.53
e
F
H
H1
L
Q
U1
U2
1.75 17.12 25.53 3.48
2.26 32.39 10.29
1.50 16.10 25.27 2.97
2.01 32.13 10.03
13.72
4.2
11.56
0.10 30.94 30.96
9.3
9.27
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. ceramic window frame has a minimum thickness of 0.400 mm.
Outline
version
References
IEC
JEDEC
JEITA
sot539bn_po
European
projection
Issue date
20-04-20
SOT539BN
Fig 12. Package outline SOT539BN
ART1K6FH_1K6FHS_1K6FHG
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Product data sheet
Rev. 3 — 8 July 2022
© Ampleon Netherlands B.V. 2022. All rights reserved.
12 of 17
ART1K6FH(S)(G)
Power LDMOS transistor
Earless flanged LDMOST ceramic package; 4 leads
SOT1248C
0.3 mm gauge plane
D
Lp
F
A
5
D1
y
Q
detail X
v
A
U1
B
c
X
1
H
2
E1
U2
3
A
E
4
b
w2
B
α
e
0
5
10 mm
scale
Dimensions
Unit(1)
mm
D1
b
c
5.5
11.81
0.18
31.55 31.52
4.2
11.56
0.10
30.94 30.96
0.217
0.465
0.007 1.242 1.241
0.165
0.455
0.004 1.218 1.219
max
nom
min
max
inches nom
min
D
A
e
E
E1
9.50
9.53
F
H
Lp
1.75 14.70 1.38
Q
U1
U2
v
w2
y
0.195 32.39 10.29 0.25 0.25 0.15
α
7°
13.72
9.30 9.27 1.50 14.50 0.98 0.045 32.13 10.03
0°
0.374 0.375 0.069 0.579 0.055 0.008 1.275 0.405 0.01 0.01 0.006 7°
0.540
0.366 0.365 0.059 0.571 0.039 0.002 1.265 0.395
Note
1. Millimeter dimensions are derived from the original inch dimensions.
Outline
version
References
IEC
JEDEC
JEITA
0°
sot1248c_po
European
projection
Issue date
13-04-16
13-08-15
SOT1248C
Fig 13. Package outline SOT1248C
ART1K6FH_1K6FHS_1K6FHG
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Product data sheet
Rev. 3 — 8 July 2022
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13 of 17
ART1K6FH(S)(G)
Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 11.
ESD sensitivity
ESD model
Class
Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002
C2A [1]
Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001
2 [2]
[1]
CDM classification C2A is granted to any part that passes after exposure to an ESD pulse of 500 V.
[2]
HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V.
10. Abbreviations
Table 12.
Abbreviations
Acronym
Description
CW
Continuous Wave
ESD
ElectroStatic Discharge
FM
Frequency Modulation
ISM
Industrial, Scientific and Medical
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
MRI
Magnetic Resonance Imaging
MTF
Median Time to Failure
RoHS
Restriction of Hazardous Substances
SMD
Surface Mounted Device
UHF
Ultra High Frequency
VHF
Very High Frequency
VSWR
Voltage Standing Wave Ratio
11. Revision history
Table 13.
Revision history
Document ID
Release date Data sheet status Change notice Supersedes
ART1K6FH_1K6FHS_1K6FHG v.3 20220708
Modifications:
•
•
Product data sheet -
ART1K6FH_1K6FHS_1K6FHG
v.2
Table 4 on page 3: changed values gate-source voltage
Table 6 on page 5: changed value gate-source voltage
ART1K6FH_1K6FHS_1K6FHG v.2 20220322
Product data sheet -
ART1K6FH v.1
ART1K6FH v.1
Product data sheet -
-
20200925
ART1K6FH_1K6FHS_1K6FHG
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Product data sheet
Rev. 3 — 8 July 2022
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14 of 17
ART1K6FH(S)(G)
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. An agreement according to which the functions
and qualities of Ampleon products exceed those described in the Product
data sheet is invalid.
12.3 Disclaimers
Maturity — After the relevant product(s) have passed the Release Gate in
Ampleon's release process, Ampleon will confirm the final version in writing.
Limited warranty and liability — Ampleon uses its best efforts to keep the
information in this document accurate and reliable. However, Ampleon gives
no representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and assumes no liability for the
consequences of the use of such information. Ampleon is not liable for
content provided by an external information source.
In no event and irrespective of the legal basis (contract, tort (including
negligence) statutory liability, misrepresentation, indemnity or any other area
of law) shall Ampleon be liable for any indirect, incidental, punitive, special or
consequential damages (including but without limitation loss of profit or
revenue, loss of use or loss of production, loss of data, cost of capital, cost of
substitute goods, property damage external to the Ampleon products and any
damage, expenditure or loss arising out of such damage, business
interruption, costs related to the removal or replacement of any products or
rework charges) or any of the foregoing suffered by any third party.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
Right to make changes — Ampleon reserves the right to change
information including but without limitation specifications and product
descriptions published in this document at any time and without notice. This
document supersedes and replaces all information regarding these products
supplied prior to the publication hereof.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Insofar as a customer or
another party nevertheless uses Ampleon products unlawfully for such
purposes, Ampleon and its suppliers are not liable for any damages.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon is not liable for any
assistance with applications or customer product design. It is customer’s sole
responsibility to determine whether the Ampleon product is suitable and fit for
the customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers shall
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Ampleon is not liable related to any default, damage, costs or problem which
is based on any weakness or default in the customer’s applications or
products, or the application or use by customer’s third party customer(s).
Customer is responsible for and shall do all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon is not liable in this
respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not guaranteed. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In the event of signing an individual agreement the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to and rejects the validity of customer's terms and
conditions regarding the purchase of Ampleon products by customer.
ART1K6FH_1K6FHS_1K6FHG
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 3 — 8 July 2022
© Ampleon Netherlands B.V. 2022. All rights reserved.
15 of 17
ART1K6FH(S)(G)
Power LDMOS transistor
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon is
not liable for inclusion and/or use of non-automotive qualified products in
automotive equipment or applications.
In the event that customer breaches this and uses the products for design
and use in automotive applications in accordance with automotive
specifications and standards, (a) Ampleon gives no warranty, representation
or other guarantees of any kind with respect to such automotive applications,
use and specifications, and (b) such use is solely and exclusively at
customer's own risk, and (c) customer fully indemnifies Ampleon against any
and all liability, damages or failed product claims, including against third
parties, arising out of customer's design and use of the product for automotive
applications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
ART1K6FH_1K6FHS_1K6FHG
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 3 — 8 July 2022
© Ampleon Netherlands B.V. 2022. All rights reserved.
16 of 17
ART1K6FH(S)(G)
Power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
Ruggedness in class-AB operation . . . . . . . . . 6
Impedance information . . . . . . . . . . . . . . . . . . . 6
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Handling information. . . . . . . . . . . . . . . . . . . . 14
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14
Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Contact information. . . . . . . . . . . . . . . . . . . . . 16
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon Netherlands B.V. 2022.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 8 July 2022
Document identifier: ART1K6FH_1K6FHS_1K6FHG
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