BLC8G22LS-450AVZ

BLC8G22LS-450AV Power LDMOS transistor Rev. 6 — 24 November 2017 Product data sheet 1. Product profile 1.1 General description 450 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 28 V; IDq = 1000 mA (main); VGS(amp)peak = 0.50 V, unless otherwise specified. Test signal 1-carrier W-CDMA [1] f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 2110 to 2170 28 85 14 41 33 [1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.6 dB at 0.01 % probability on CCDF. 1.2 Features and benefits         Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifiers for base stations and multi carrier applications in the 2110 MHz to 2170 MHz frequency range BLC8G22LS-450AV Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain2 (peak) 2 drain1 (main) 3 gate1 (main) 4 gate2 (peak) Simplified outline 7 1 2, 7 6 5 3 3 5 4 4 [1] 5 source 6 video decoupling (peak) 7 video decoupling (main) [1] 2 Graphic symbol 1, 6 aaa-014884 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package BLC8G22LS-450AV Name Description Version - air cavity plastic earless flanged package; 6 leads SOT1258-1 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS(amp)main main amplifier gate-source voltage 0.5 +13 V VGS(amp)peak peak amplifier gate-source voltage 0.5 +13 V Tstg storage temperature 65 +150 C - 225 C junction temperature Tj [1] [1] Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF calculator. 5. Recommended operating conditions Table 5. BLC8G22LS-450AV Product data sheet Operating conditions Symbol Parameter Tcase case temperature Conditions All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 November 2017 Min Max Unit 40 +125 C © Ampleon Netherlands B.V. 2017. All rights reserved. 2 of 16 BLC8G22LS-450AV Power LDMOS transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-c) Conditions thermal resistance from junction to case Typ Unit PL = 85 W 0.29 K/W PL = 110 W 0.27 K/W VDS = 28 V; IDq = 800 mA (main); VGS(amp)peak = 0.60 V; Tcase = 80 C 7. Characteristics Table 7. DC characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Main device V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.2 mA 65 - - V VGS(th) gate-source threshold voltage 1.5 1.9 2.3 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 900 mA 1.7 2.0 2.5 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V - 40 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 280 nA gfs forward transconductance VDS = 10 V; ID = 11 A - 14.5 - RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 7.7 A - 72 107 m VDS = 10 V; ID = 220 mA S Peak device V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 3.5 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 350 mA 1.5 1.9 2.3 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 2200 mA 1.7 2.0 2.5 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V - 58 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 280 nA gfs forward transconductance VDS = 10 V; ID = 17.5 A - 23 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 12.25 A - 47 69 m Table 8. RF characteristics Test signal: 1-carrier W-CDMA; PAR = 9.6 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 1 to 64 DPCH; f1 = 2112.5 MHz; f2 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 1000 mA (main); VGS(amp)peak = 0.50 V; Tcase = 25 C; unless otherwise specified; in an asymmetrical Doherty production test circuit at frequencies from 2110 MHz to 2170 MHz. BLC8G22LS-450AV Product data sheet Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 85 W 13 14 - dB RLin input return loss PL(AV) = 85 W - 12 7 dB D drain efficiency PL(AV) = 85 W 37 41 - % ACPR adjacent channel power ratio PL(AV) = 85 W - 33 27 dBc All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 November 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 3 of 16 BLC8G22LS-450AV Power LDMOS transistor Table 9. RF characteristics Test signal: 1-carrier W-CDMA; PAR = 9.6 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 1 to 64 DPCH; f = 2115 MHz; RF performance at VDS = 28 V; IDq = 1000 mA (main); VGS(amp)peak = 0.50 V; Tcase = 25 C; unless otherwise specified; in an asymmetrical Doherty production test circuit at a frequency of 2112.5 MHz. Symbol Parameter Conditions Min Typ Max Unit PARO output peak-to-average ratio PL(M) peak output power PL(AV) = 115 W 5.9 6.5 - dB PL(AV) = 115 W 437 510 - W 8. Test information 8.1 Ruggedness in Doherty operation The BLC8G22LS-450AV is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: • VDS = 28 V; IDq = 800 mA; VGS(amp)peak = 0.50 V; f = 2112.5 MHz: 1-carrier W-CDMA; PL = 141 W (5 dB OBO); 100 % clipping • VDS = 32 V; IDq = 800 mA; VGS(amp)peak = 0.50 V; f = 2112.5 MHz: 1-carrier W-CDMA; PL = 141 W (5 dB OBO); 100 % clipping 8.2 Impedance information Table 10. Typical impedance of main device Measured load-pull data of main device; IDq = 1300 mA (main); VDS = 28 V; pulsed CW (tp = 100 s;  = 10 %). f ZS [1] ZL [1] PL [2] D [2] Gp [2] (MHz) () () (W) (%) (dB) Maximum power load 2110 1.2  j5.1 0.7  j4.4 217 49.1 16.8 2140 1.7  j5.4 0.8  j4.6 214 49.2 17.1 2170 1.9  j5.6 0.8  j4.7 207 48.8 17.3 Maximum drain efficiency load 2110 1.2  j5.1 1.4  j3.4 166 58.1 18.9 2140 1.7  j5.4 1.4  j4.0 159 57.4 19.1 2170 1.9  j5.6 1.4  j4.0 151 56.4 19.4 [1] ZS and ZL defined in Figure 1. [2] At 3 dB gain compression. Table 11. Typical impedance of peak device Measured load-pull data of peak device; IDq = 2300 mA (peak); VDS = 28 V; pulsed CW (tp = 100 s;  = 10 %). f ZS [1] ZL [1] PL [2] D [2] Gp [2] (MHz) () () (W) (%) (dB) Maximum power load BLC8G22LS-450AV Product data sheet 2110 0.7  j5.8 2.1  j6.2 351 50.0 16.9 2140 0.9  j6.0 2.1  j6.3 346 51.0 17.3 All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 November 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 4 of 16 BLC8G22LS-450AV Power LDMOS transistor Table 11. Typical impedance of peak device …continued Measured load-pull data of peak device; IDq = 2300 mA (peak); VDS = 28 V; pulsed CW (tp = 100 s;  = 10 %). f ZS [1] (MHz) 2170 D [2] ZL [1] PL [2] Gp [2] () () (W) (%) (dB) 1.3  j6.4 2.4  j6.6 342 49.1 17.2 Maximum drain efficiency load 2110 0.7  j5.8 1.6  j5.1 274 58.0 18.8 2140 0.9  j6.0 1.6  j5.1 261 57.5 19.0 2170 1.3  j6.4 1.7  j5.4 270 56.6 18.9 [1] ZS and ZL defined in Figure 1. [2] At 3 dB gain compression. drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 8.3 Recommended impedances for Doherty design Table 12. Typical impedance of main at 1 : 1 load Measured load-pull data of main device; IDq = 1300 mA (main); VDS = 28 V; pulsed CW (tp = 100 s;  = 10 %). f ZS [1] ZL [1] PL(3dB) [2] D [2] Gp [2] (MHz) () () (W) (%) (dB) 2110 1.2  j5.1 1.0  j4.5 182 45 17.0 2140 1.7  j5.4 1.0  j4.5 182 45 17.1 2170 1.9  j5.6 1.0  j4.7 182 45 17.3 [1] ZS and ZL defined in Figure 1. [2] At PL(AV) = 85 W. Table 13. Typical impedance of main device at 1 : 2.5 load Measured load-pull data of main device; IDq = 1300 mA (main); VDS = 28 V; pulsed CW (tp = 100 s;  = 10 %). BLC8G22LS-450AV Product data sheet ZL [1] PL(3dB) [2] D [2] () () (W) (%) (dB) 1.2  j5.1 1.8  j3.6 100 45 19.0 2140 1.7  j5.4 2.0  j3.6 100 45 19.0 2170 1.9  j5.6 2.1  j3.6 100 45 19.0 f ZS [1] (MHz) 2110 [1] ZS and ZL defined in Figure 1. [2] At PL(AV) = 85 W. All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 November 2017 Gp [2] © Ampleon Netherlands B.V. 2017. All rights reserved. 5 of 16 BLC8G22LS-450AV Power LDMOS transistor Table 14. Typical impedance of peak device at 1 : 1 load Measured load-pull data of peak device; IDq = 2300 mA (peak); VDS = 28 V; pulsed CW (tp = 100 s;  = 10 %). f ZS [1] ZL [1] PL(3dB) [2] D [2] Gp [2] (MHz) () () (W) (%) (dB) 2110 0.7  j5.8 2.2  j6.4 309 54.0 16.9 2140 0.9  j6.0 2.2  j6.2 309 54.0 17.3 2170 1.3  j6.4 2.2  j6.1 309 54.0 17.2 [1] ZS and ZL defined in Figure 1. [2] At 3 dB gain compression. Table 15. Off-state impedances of peak device f Zoff (MHz) () 2110 0.5  j3.4 2140 0.5  j3.6 2170 0.5  j3.8 8.4 Test circuit 110 mm R1 C17 C3 C14 C13 C8 C9 C7 C2 C10 X1 80 mm R3 C1 C4 R2 C11 C6 C5 C12 C15 C16 aaa-014885 Printed-Circuit Board (PCB): Rogers 4350B: r = 3.66; thickness = 0.508 mm; thickness copper plating = 35 m. See Table 16 for a list of components. Fig 2. BLC8G22LS-450AV Product data sheet Component layout All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 November 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 6 of 16 BLC8G22LS-450AV Power LDMOS transistor Table 16. List of components See Figure 2 for component layout. Component Description Value Remarks C1, C2, C3, C4, multilayer ceramic chip capacitor C5, C6, C7, C8 10 pF [1] ATC 800B C9, C10 1.0 pF [1] ATC 800B ATC 800B multilayer ceramic chip capacitor C11 multilayer ceramic chip capacitor 0.2 pF [1] C12, C13 multilayer ceramic chip capacitor 4.7 F, 100 V [2] Murata C14, C15 electrolytic capacitor 470 F, 63 V C16, C17 multilayer ceramic chip capacitor 10.0 F, 50 V [2] Murata R1, R2 SMD resistor 4.7  SMD 1206, Philips R3 SMD resistor 50 , 10 W SMD 1206, Philips X1 transistor - Anaren X3C21P1-04S [1] American Technical Ceramics type 800B or capacitor of same quality. [2] Murata or capacitor of same quality. 8.5 Graphical data 8.5.1 Pulsed CW aaa-013480 16 60 Gp (dB) ηD (%) 15 50 Gp (1) (1) (2) (2) (3) (3) 14 40 13 30 12 20 ηD 11 10 10 0 100 200 300 400 PL (W) 0 500 VDS = 28 V; IDq = 1000 mA; VGS(amp)peak = 0.50 V; tp = 100 s;  = 10 %. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz Fig 3. BLC8G22LS-450AV Product data sheet Power gain and drain efficiency as function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 November 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 7 of 16 BLC8G22LS-450AV Power LDMOS transistor 8.5.2 1-Carrier W-CDMA PAR = 9.6 dB per carrier at 0.01 % probability on the CCDF; 3GPP test model 1 with 64 DPCH (100 % clipping). aaa-013481 15 Gp (dB) 50 ηD (%) Gp 14 aaa-013482 -20 ACPR5M (dBc) 40 -30 (1) (1) (2) (2) (3) (3) 13 30 (1) (2) (3) -40 12 20 -50 11 10 ηD 10 0 25 50 75 100 125 PL (W) 0 150 -60 0 VDS = 28 V; IDq = 1000 mA; VGS(amp)peak = 0.50 V. 25 50 (1) f = 2112.5 MHz (2) f = 2140.0 MHz (2) f = 2114.0 MHz (3) f = 2167.5 MHz 100 125 PL (W) 150 VDS = 28 V; IDq = 1000 mA; VGS(amp)peak = 0.50 V. (1) f = 2112.5 MHz Fig 4. 75 (3) f = 2167.5 MHz Power gain and drain efficiency as function of output power; typical values Fig 5. aaa-013483 10 PAR (dB) Adjacent channel power ratio (5 MHz) as a function of output power; typical values aaa-013484 18 RLin (dB) 9 16 (1) 8 14 (1) (2) (3) (2) 7 12 6 10 5 (3) 8 0 25 50 75 100 125 PL (W) 150 0 VDS = 28 V; IDq = 1000 mA; VGS(amp)peak = 0.50 V. 25 50 (1) f = 2112.5 MHz (2) f = 2114.0 MHz (2) f = 2114.0 MHz (3) f = 2167.5 MHz (3) f = 2167.5 MHz Peak-to-average power ratio as a function of output power; typical values BLC8G22LS-450AV Product data sheet 100 125 PL (W) 150 VDS = 28 V; IDq = 1000 mA; VGS(amp)peak = 0.50 V. (1) f = 2112.5 MHz Fig 6. 75 Fig 7. Input return loss as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 November 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 8 of 16 BLC8G22LS-450AV Power LDMOS transistor 8.5.3 2-Carrier W-CDMA PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test model 1 with 64 DPCH (46 % clipping). aaa-013485 15 Gp (dB) 50 Gp 14 aaa-013486 0 ACPR5M (dBc) -10 ηD (%) 40 (1) (2) (3) -20 13 -30 12 (1) (2) (3) 20 -40 10 ηD 10 0 30 60 90 120 PL (W) ACPR10M 0 150 -50 -60 0 VDS = 28 V; IDq = 1000 mA; VGS(amp)peak = 0.50 V. -30 -40 -50 25 50 75 100 125 150 175 PL (W) -60 200 VDS = 28 V; IDq = 1000 mA; VGS(amp)peak = 0.50 V. (1) f = 2112.5 MHz (1) f = 2112.5 MHz (2) f = 2140.0 MHz (2) f = 2114.0 MHz (3) f = 2167.5 MHz Fig 8. -20 30 (1) (1) (2) (2) (3) (3) 11 ACPR5M 0 ACPR10M (dBc) -10 (3) f = 2167.5 MHz Power gain and drain efficiency as function of output power; typical values Fig 9. Adjacent channel power ratio (5 MHz) and adjacent channel power ratio (10 MHz) as function of output power; typical values aaa-013487 21 RLin (dB) 19 17 (1) 15 (2) 13 (3) 11 9 0 25 50 75 100 125 PL (W) 150 VDS = 28 V; IDq = 1000 mA; VGS(amp)peak = 0.50 V. (1) f = 2112.5 MHz (2) f = 2114.0 MHz (3) f = 2167.5 MHz Fig 10. Input return loss as a function of output power; typical values BLC8G22LS-450AV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 November 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 9 of 16 BLC8G22LS-450AV Power LDMOS transistor 8.5.4 2-Tone VBW aaa-013488 -10 IMD (dBc) -20 (1) (2) IMD3 -30 -40 (1) (2) IMD7 -50 IMD5 -60 (2) (1) -70 1 10 102 carrier spacing (MHz) 103 VDS = 28 V; IDq = 1000 mA; VGS(amp)peak = 0.50 V; f = 2114 MHz. (1) IMD low (2) IMD high Fig 11. VBW capability BLC8G22LS-450AV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 November 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 10 of 16 BLC8G22LS-450AV Power LDMOS transistor 9. Package outline Air cavity plastic earless flanged package; 6 leads SOT1258-1 D A F 5 w1 D1 v B A L b c 7 2 6 1 y Į H1 Z1 Z H E1 U2 E A 3 4 e Q w2 b1 U1 B B 0 10 mm y Į 0.1 65° 3.17 5.79 61° 2.67 5.29 scale Z Z1 Dimensions Unit mm A max 4.65 nom min 4.18 b b1 c 1.12 11.78 0.2 D D1 E 31.44 31.34 9.60 E1 H H1 Q(1) 36.42 1.83 16.71 8.12 2.33 32.33 10.23 36.22 1.63 16.51 7.62 2.13 32.13 10.03 e 9.50 L F U1 v w1 w2 0.5 0.5 0.5 13.72 0.91 11.58 0.1 31.04 31.14 9.20 9.30 Note 1. Dimension Q is measured 0.1 mm away from the flange. 2. Ringframe and/or ringframe glue shall not overhang at the side of the flange. Outline version U2 References IEC JEDEC JEITA sot1258-1_po European projection Issue date 14-02-24 17-08-31 SOT1258-1 Fig 12. Package outline SOT1258-1 BLC8G22LS-450AV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 November 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 11 of 16 BLC8G22LS-450AV Power LDMOS transistor 10. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. Table 17. ESD sensitivity ESD model Class Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002 C2A [1] Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001 2 [2] [1] CDM classification C2A is granted to any part that passes after exposure to an ESD pulse of 500 V, but fails after exposure to an ESD pulse of 750 V. [2] HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V, but fails after exposure to an ESD pulse of 4000 V. 11. Abbreviations Table 18. BLC8G22LS-450AV Product data sheet Abbreviations Acronym Description 3GPP 3rd Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal-Oxide Semiconductor MTF Median Time to Failure OBO Output Back-Off PAR Peak-to-Average Ratio SMD Surface Mounted Device VBW Video BandWidth VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 November 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 12 of 16 BLC8G22LS-450AV Power LDMOS transistor 12. Revision history Table 19. Revision history Document ID Release date Data sheet status Change notice Supersedes BLC8G22LS-450AV v.6 20171124 Product data sheet - BLC8G22LS-450AV v.5 Modifications: • • • Table 2 on page 2: changed simplified version drawing SOT1258-3 to SOT1258-1 Table 3 on page 2: changed version SOT1258-3 to SOT1258-1 Figure 12 on page 11: changed package outline drawing SOT1258-3 to SOT1258-1 BLC8G22LS-450AV v.5 20161202 Product data sheet - BLC8G22LS-450AV v.4 BLC8G22LS-450AV v.4 20150901 Product data sheet - BLC8G22LS-450AV v.3 BLC8G22LS-450AV v.3 20150602 Product data sheet - BLC8G22LS-450AV v.2 BLC8G22LS-450AV v.2 20150515 Product data sheet - BLC8G22LS-450AV v.1 BLC8G22LS-450AV v.1 20140929 Objective data sheet - - BLC8G22LS-450AV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 November 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 13 of 16 BLC8G22LS-450AV Power LDMOS transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 13.2 Definitions Draft — The document is a draft version only. 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Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLC8G22LS-450AV Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 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Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 November 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 14 of 16 BLC8G22LS-450AV Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’s standard warranty and Ampleon’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. 14. Contact information For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales BLC8G22LS-450AV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 24 November 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 15 of 16 BLC8G22LS-450AV Power LDMOS transistor 15. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 8 8.1 8.2 8.3 8.4 8.5 8.5.1 8.5.2 8.5.3 8.5.4 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Recommended operating conditions. . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4 Ruggedness in Doherty operation . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Recommended impedances for Doherty design 5 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 7 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 8 2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 9 2-Tone VBW . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Handling information. . . . . . . . . . . . . . . . . . . . 12 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon Netherlands B.V. 2017. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 24 November 2017 Document identifier: BLC8G22LS-450AV