BLC9G10XS-120AZ

BLC9G10XS-120A Power LDMOS transistor Rev. 1 — 29 November 2018 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in an asymmetrical Doherty application demo circuit. Test signal f (MHz) (mA) (V) (W) 1-carrier W-CDMA 925 to 960 150 28 18 [1] IDq VDS PL(AV) ηD ACPR (dB) (%) (dBc) 20 50 28 [1] Gp Test signal: 3GPP test model 1; 64 DPCH; PAR = 10.5 dB at 0.01 % probability on CCDF. 1.2 Features and benefits          Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Designed for broadband operation Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection For RoHS compliance see the product details on the Ampleon website 1.3 Applications  RF power amplifier for W-CDMA base stations and multi carrier applications in the 920 MHz to 960 MHz frequency range BLC9G10XS-120A Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain1 2 drain2 3 gate1 4 gate2 5 Simplified outline Graphic symbol 1 3 5 4 [1] source 3 [1] 1 2 2 4 sym117 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package BLC9G10XS-120A Name Description Version - SOT1273-1 air cavity plastic earless flanged package; 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage 0.5 +11 V Tstg storage temperature 65 +150 C - 225 C [1] junction temperature Tj [1] Conditions Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF calculator. 5. Thermal characteristics Table 5. BLC9G10XS-120A Product data sheet Thermal characteristics Symbol Parameter Conditions Rth(j-c) thermal resistance from junction to case Tcase = 80 C; IDq = 120 mA; VGS(am)peak = 0.8 V Unit PL= 18 W 0.349 k/W PL= 28.2 W 0.301 k/W All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 November 2018 Typ © Ampleon Netherlands B.V. 2018. All rights reserved. 2 of 14 BLC9G10XS-120A Power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 °C, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Main device V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.4 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 40 mA 1.5 2.0 2.5 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 240 mA 1.5 2.17 2.5 V IDSS drain leakage current VDS = 28 V - - 1.4 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 8 - A IGSS gate leakage current VGS = 11 V - - 140 nA gfs forward transconductance VDS = 10 V; ID = 2 A - 2.91 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 1.4 A - 326 - m 65 - - V Peak device V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.81 mA VGS(th) gate-source threshold voltage VDS = 10 V; ID = 81mA 1.5 1.9 2.5 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 486 mA 1.5 2.0 2.5 V IDSS drain leakage current VDS = 28 V - - 1.4 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 15.7 - A IGSS gate leakage current VGS = 11 V - - 140 nA gfs forward transconductance VDS = 10 V; ID = 2 A - 5.75 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 1.4 A - 165 - m Table 7. RF characteristics Test signal: 1-carrier W-CDMA; PAR = 7.2 dB at 0.01 % probability on CCDF; 3GPP test model 1; 64 DPCH; f1 = 927.5 MHz; f3 = 957.5 MHz; RF performance at VDS = 28 V; IDq = 120 mA; VGS(amp)peak = 0.8 V; Tcase = 25 °C; unless otherwise specified; in a Doherty production circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 18 W 19.8 21 - dB D drain efficiency PL(AV) = 18 W 44 49 - % RLin input return loss PL(AV) = 18 W - 12 8 dB ACPR adjacent channel power ratio PL(AV) = 18 W - 32 27 dBc Table 8. RF characteristics Test signal: pulsed CW; tp = 100 μs; δ = 10 %; f = 960 MHz; RF performance at VDS = 28 V; IDq = 120 mA (main); VGS(amp)peak = 0.8 V; Tcase = 25 °C; unless otherwise specified; in an asymmetrical Doherty production test circuit at frequencies from 925 MHz to 960 MHz BLC9G10XS-120A Product data sheet Symbol Parameter Conditions PL(3dB) output power at 3 dB gain compression All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 November 2018 Min Typ Max Unit 125 140 - W © Ampleon Netherlands B.V. 2018. All rights reserved. 3 of 14 BLC9G10XS-120A Power LDMOS transistor 7. Test information 7.1 Ruggedness in Doherty operation The BLC9G10XS-120A is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 120 mA; VGS(amp)peak = 0.8 V; PL = 100 W (CW); f = 925 MHz; tested on the Doherty development circuit. 7.2 Impedance information Table 9. Typical impedance of main device Measured load-pull data of main device; IDq = 240 mA (main); VDS = 28 V; typical values unless otherwise specified. f ZS [1] ZL [1] PL [2] ηD [2] Gp [3] (MHz) (Ω) (Ω) (W) (%) (dB) Maximum power load 920 1.15  j5.18 4.33 + j1.33 66.0 67.8 22.7 940 1.59  j5.92 4.33 + j1.33 65.0 67.6 23.0 960 2.56  j6.94 3.93 + j1.22 63.0 64.8 22.8 Maximum drain efficiency load 920 1.15  j5.18 3.89 + j4.44 46.8 78.4 25.1 940 1.59  j5.92 3.09 + j4.94 38.0 78.5 25.8 960 2.56  j6.94 3.24 + j4.34 41.7 75.7 25.3 [1] ZS and ZL defined in Figure 1. [2] At 3 dB gain compression. [3] At 6 dB OBO. Table 10. Typical impedance of peak device Measured load-pull data of peak device; IDq = 480 mA (peak); VDS = 28 V; typical values unless otherwise specified. f ZS [1] ZL [1] PL [2] ηD [2] Gp [3] (MHz) (Ω) (Ω) (W) (%) (dB) Maximum power load 920 1.81  j5.01 2.32  j0.81 149.0 70.2 22.4 940 2.05  j5.52 2.40  j0.27 150.3 73.55 22.88 960 2.78  j6.29 2.32  j0.81 141.0 69.5 22.7 Maximum drain efficiency load BLC9G10XS-120A Product data sheet 920 1.81  j5.01 2.30 + j1.69 79.4 84.3 26.2 940 2.05  j5.52 2.32 + j1.69 97.7 84.5 25.8 960 2.78  j6.29 2.16 + j1.33 91.2 84.0 25.8 [1] ZS and ZL defined in Figure 1. [2] At 3 dB gain compression. [3] At 6 dB OBO. All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 November 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 4 of 14 BLC9G10XS-120A Power LDMOS transistor drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.3 Test circuit 50 mm C1 50 mm C25 C2 C13 R1 C12 C5 R2 C4 X1 77 mm C3 C14 C15 C16 C17 C18 C19 C20 C21 C6 C7 C8 C9 C22 C23 R3 C11 C24 C26 C10 amp00736 Printed-Circuit Board (PCB): RO4350B: r = 3.5; thickness = 0.508 mm; thickness copper plating = 35 m. See Table 11 for a list of components. Fig 2. Component layout Table 11. List of components See Figure 2 for component layout. Component Description C1, C10, C13, C14, C23, C24 multilayer ceramic chip capacitor 4.7 F, 100 V C2, C3, C4, C7, C11, C12, C22 multilayer ceramic chip capacitor 100 pF [1] ATC600F C5 multilayer ceramic chip capacitor 6.8 pF [1] ATC600F multilayer ceramic chip capacitor 3.6 pF [1] ATC600F C8, C15 multilayer ceramic chip capacitor 3.0 pF [1] ATC600F C9, C19 multilayer ceramic chip capacitor 4.3 pF [1] ATC600F multilayer ceramic chip capacitor 33 pF [1] ATC600F C6 C16 BLC9G10XS-120A Product data sheet Value All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 November 2018 Remarks Murata 1210 © Ampleon Netherlands B.V. 2018. All rights reserved. 5 of 14 BLC9G10XS-120A Power LDMOS transistor Table 11. List of components …continued See Figure 2 for component layout. Component Description Value Remarks multilayer ceramic chip capacitor 3.9 pF [1] ATC600F multilayer ceramic chip capacitor 2.0 pF [1] ATC600F C21 multilayer ceramic chip capacitor 6.2 pF [1] ATC600F C25, C26 electrolytic capacitor 1000 F, 100 V R1, R3 chip resistor 5.1  SMD 0805 R2 chip resistor 50  SMD 0805 X1 asymmetric coupler 2 dB RN2 CMX09Q02 C17, C18 C20 [1] Murata or capacitor of same quality 7.4 Graphical data All data measured on the Doherty development circuit. 7.4.1 CW amp00737 25 Gp (dB) amp00738 40 ηD (%) (1) (2) (3) (1) (2) (3) 23 80 RLin (dB) 70 30 Gp 21 60 (3) (2) (1) 20 19 50 17 40 10 ηD 15 30 34 38 42 46 50 PL (dBm) 0 54 34 VDS = 28 V; IDq = 120 mA; VGS(amp)peak = 0.8 V. 38 42 46 50 PL (dBm) 54 VDS = 28 V; IDq = 120 mA; VGS(amp)peak = 0.8 V; tp = 100 s;  = 10 %. (1) f = 925 MHz (2) f = 943MHz (1) f = 925 MHz (3) f = 960 MHz (2) f = 943 MHz (3) f = 960 MHz Fig 3. Power gain and drain efficiency as function of output power; typical values BLC9G10XS-120A Product data sheet Fig 4. Input return loss as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 November 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 6 of 14 BLC9G10XS-120A Power LDMOS transistor 7.4.2 Pulsed CW amp00739 25 Gp (dB) amp00740 40 ηD (%) (1) (2) (3) (1) (2) (3) 23 80 RLin (dB) 70 30 Gp 21 60 (3) (2) (1) 20 19 50 17 40 10 ηD 15 30 34 38 42 46 50 PL (dBm) 0 54 34 VDS = 28 V; IDq = 120 mA; VGS(amp)peak = 0.8 V; tp = 100 s;  = 10 %. 38 (1) f = 925 MHz (2) f = 943MHz (2) f = 943 MHz (3) f = 960 MHz (3) f = 960 MHz Power gain and drain efficiency as function of output power; typical values BLC9G10XS-120A Product data sheet 46 50 PL (dBm) 54 VDS = 28 V; IDq = 120 mA; VGS(amp)peak = 0.8 V; tp = 100 s;  = 10 %. (1) f = 925 MHz Fig 5. 42 Fig 6. Input return loss as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 November 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 7 of 14 BLC9G10XS-120A Power LDMOS transistor 7.4.3 1-Carrier W-CDMA amp00741 25 Gp (dB) amp00742 24 ηD (%) (1) (2) (3) (1) (2) (3) 23 80 RLin (dB) 70 20 Gp 21 60 (3) 16 19 50 (2) 12 ηD 17 (1) 40 15 30 36 38 40 42 44 46 48 50 PL(AV) (dBm) 8 52 36 VDS = 28 V; IDq = 120 mA; VGS(amp)peak = 0.8 V; 46 % clipping. 38 40 (1) f = 925 MHz (2) f = 943 MHz (2) f = 943MHz (3) f = 960 MHz (3) f = 960 MHz Power gain and drain efficiency as function of average output power; typical values amp00743 -20 ACPR5M (dBc) -25 44 46 48 50 PL(AV) (dBm) 52 VDS = 28 V; IDq = 120 mA; VGS(amp)peak = 0.8 V; 46 % clipping. (1) f = 925 MHz Fig 7. 42 Fig 8. Input return loss as a function of average output power; typical values amp00744 -20 ACPR10M (dBc) -30 (1) -30 -35 -40 (2) (3) (1) -40 (2) -50 -45 (3) -50 -60 36 38 40 42 44 46 48 50 PL(AV) (dBm) 52 VDS = 28 V; IDq = 120 mA; VGS(amp)peak = 0.8 V; 46 % clipping. 36 38 40 (1) f = 925 MHz (2) f = 943 MHz (2) f = 943 MHz (3) f = 960 MHz (3) f = 960 MHz Adjacent channel power ratio (5 MHz) as a function of average output power; typical values BLC9G10XS-120A Product data sheet 44 46 48 50 PL(AV) (dBm) 52 VDS = 28 V; IDq = 120 mA; VGS(amp)peak = 0.8 V; 46 % clipping. (1) f = 925 MHz Fig 9. 42 Fig 10. Adjacent channel power ratio (10 MHz) as a function of average output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 November 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 8 of 14 BLC9G10XS-120A Power LDMOS transistor 7.4.4 2-Tone VBW amp00745 0 IMD (dBc) (1) (2) -20 IMD3 -40 (1) (2) IMD5 -60 IMD7 (2) -80 (1) -100 1 10 102 carrier spacing (MHz) 103 VDS = 28 V; IDq = 120 mA; VGS(amp)peak = 0.8 V; fc = 940 MHz. (1) IMD low (2) IMD high Fig 11. VBW capability on Doherty development RF test circuit BLC9G10XS-120A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 November 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 9 of 14 BLC9G10XS-120A Power LDMOS transistor 8. Package outline Air cavity plastic earless flanged package; 4 leads SOT1273-1 D F A 5 D1 w1 U1 B B v A H1 c 1 2 y U2 H E1 E A 3 4 b w2 Q B e 0 10 mm 5 scale Dimensions Unit mm A max 4.01 nom min 3.40 b c D D1 E E1 3.91 0.18 20.42 20.37 9.80 9.75 3.71 0.13 20.12 20.17 9.50 9.55 e F H H1 Q(1) U1 U2 v 1.14 19.53 12.83 1.68 20.70 9.91 0.50 w1 w2 y 0.50 0.50 0.10 8.89 0.94 19.33 12.57 1.45 20.50 9.70 Note: 1. Dimension Q is measured at 0.1 mm away from the flange. 2. Ringframe and/or ringframe glue shall not overhang at the side of the flange. Outline version References IEC JEDEC JEITA sot1273-1_po European projection Issue date 17-01-12 SOT1273-1 Fig 12. Package outline SOT1273-1 BLC9G10XS-120A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 November 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 10 of 14 BLC9G10XS-120A Power LDMOS transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. Table 12. ESD sensitivity ESD model Class Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002 C2A [1] Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001 2 [2] [1] CDM classification C2A is granted to any part that passes after exposure to an ESD pulse of 500 V. [2] HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V. 10. Abbreviations Table 13. Abbreviations Acronym Description 3GPP 3rd Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal Oxide Semiconductor MTF Median Time to Failure OBO Output Back Off PAR Peak-to-Average Ratio RoHS Restriction of Hazardous Substances SMD Surface Mounted Device VBW Video BandWidth VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 14. Revision history Document ID Release date Data sheet status Change notice Supersedes BLC9G10XS-120A v.1 20181129 Product data sheet - - BLC9G10XS-120A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 November 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 11 of 14 BLC9G10XS-120A Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Ampleon and its customer, unless Ampleon and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Ampleon product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Ampleon does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Ampleon takes no responsibility for the content in this document if provided by an information source outside of Ampleon. In no event shall Ampleon be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Ampleon’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Ampleon. Right to make changes — Ampleon reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLC9G10XS-120A Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 November 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 12 of 14 BLC9G10XS-120A Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’s standard warranty and Ampleon’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. 13. Contact information For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales BLC9G10XS-120A Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 November 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 13 of 14 BLC9G10XS-120A Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.4.1 7.4.2 7.4.3 7.4.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4 Ruggedness in Doherty operation . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 8 2-Tone VBW . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Handling information. . . . . . . . . . . . . . . . . . . . 11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon Netherlands B.V. 2018. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 29 November 2018 Document identifier: BLC9G10XS-120A