BLC9G21LS-60AVZ

BLC9G21LS-60AV Power LDMOS transistor Rev. 1 — 6 July 2017 Product data sheet 1. Product profile 1.1 General description 60 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in the Doherty demo board. Test signal 1-carrier W-CDMA [1] f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 1930 to 1990 28 2.5 17.5 30 39 [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01% probability on CCDF per carrier. 1.2 Features and benefits          Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Asymmetric design to achieve optimum efficiency across the band Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent digital pre-distortion Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifiers for base stations and multi carrier applications in the 1805 MHz to 2200 MHz frequency range BLC9G21LS-60AV Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain1 (main) 2 drain2 (peak) 3 gate1 (main) 4 gate2 (peak) Simplified outline 5 2 6 1, 5 3 7 5 video decoupling (main) 6 video decoupling (peak) 7 source [1] 1 Graphic symbol 7 4 3 4 2, 6 [1] aaa-007731 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package BLC9G21LS-60AV Name Description Version - air cavity plastic earless flanged package; 6 leads SOT1275-1 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VGS Tstg storage temperature Min Max Unit drain-source voltage - 65 V gate-source voltage 0.5 +13 V 65 +150 C - 225 C [1] junction temperature Tj [1] Conditions Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF calculator. 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-c) BLC9G21LS-60AV Product data sheet Conditions thermal resistance from junction to case Typ Unit PL = 2.5 W 0.92 K/W PL = 9.5 W 0.97 K/W Tcase = 80 C All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 July 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 2 of 15 BLC9G21LS-60AV Power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 65 - - V Main device V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.2 mA VGS(th) gate-source threshold voltage VDS = 10 V; ID = 20 mA 1.5 2 2.5 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 100 mA 1.7 2.2 2.7 V IDSS drain leakage current VGS = 0 V; VDS = 32 V - - 1.4 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 4 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 140 nA gfs forward transconductance VDS = 10 V; ID = 1.0 A - 1.5 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 0.7 A - 624 1135 m Peak device V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.3 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 30 mA 1.5 2 2.5 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 150 mA 1.7 2.2 2.7 V IDSS drain leakage current VGS = 0 V; VDS = 32 V - - 1.4 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 6 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 140 nA gfs forward transconductance VDS = 10 V; ID = 1.5 A - 2.2 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 1.05 A - 420 760 m Table 7. RF characteristics Test signal: 1-carrier W-CDMA; PAR = 7.2 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 1 to 64 DPCH; RF performance at VDS = 28 V; IDq = 100 mA (main); VGS(amp)peak = 0.8 V; Tcase = 25 C; unless otherwise specified; in an asymmetrical Doherty production test circuit at frequencies from 1930 MHz to 1990 MHz. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 2.5 W 16.3 17.5 - dB RLin input return loss PL(AV) = 2.5 W - 10 7 dB D drain efficiency PL(AV) = 2.5 W 26 30 - % ACPR adjacent channel power ratio PL(AV) = 2.5 W - 39 34 dBc Table 8. RF characteristics Test signal: pulsed CW; tp = 100 s;  = 10 %; RF performance at VDS = 28 V; IDq = 100 mA (main); VGS(amp)peak = 0.8 V; Tcase = 25 C; unless otherwise specified; in an asymmetrical Doherty production test circuit at frequencies from 1930 MHz to 1990 MHz. BLC9G21LS-60AV Product data sheet Symbol Parameter PL(M) peak output power Conditions All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 July 2017 Min Typ Max Unit 53 60 - W © Ampleon Netherlands B.V. 2017. All rights reserved. 3 of 15 BLC9G21LS-60AV Power LDMOS transistor 7. Test information 7.1 Ruggedness in Doherty operation The BLC9G21LS-60AV is capable of withstanding a load mismatch corresponding to a VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 100 mA (main); VGS(amp)peak = 0.8 V; PL = 38 W (CW); f1 = 1805 MHz; f2 = 1930 MHz. 7.2 Impedance information Table 9. Typical impedance of main device Measured load-pull data of main device; IDq = 100 mA (main); VDS = 28 V. f ZS [1] ZL [1] PL [2] D [2] Gp [2] (MHz) () () (W) (%) (dB) 30.7 63.9 16.4 Maximum power load 1805 2.4  j6.9 12.0  j9.4 1842 2.3  j7.1 12.0  j9.4 30.2 63.5 16.5 1880 2.6  j7.9 11.0  j8.0 29.3 61.2 16.2 1930 2.6  j9.3 12.0  j9.4 27.8 60.1 16.6 1960 3.2  j9.0 12.0  j9.4 28.4 60.6 16.5 1990 3.4  j9.6 12.0  j9.4 27.4 59.1 16.6 2110 4.7  j15.9 9.7  j8.8 29.2 60.6 18.0 2140 6.7  j15.3 9.7  j8.8 28.1 58.9 18.0 2170 5.3  j19.6 9.7  j8.8 29.1 61.7 18.3 Maximum drain efficiency load BLC9G21LS-60AV Product data sheet 1805 2.4  j6.9 23.6  j0.0 20.5 73.3 18.2 1842 2.3  j7.1 20.0  j0.0 21.7 73.0 18.0 1880 2.6  j7.9 19.6  j3.1 18.9 71.5 18.4 1930 2.6  j9.3 17.0  j2.4 18.5 67.9 18.5 1960 3.2  j9.0 14.8  j2.0 19.7 69.3 18.3 1990 3.4  j9.6 15.0  j0.0 20.0 66.4 18.3 2110 4.7  j15.9 13.0  j1.6 17.7 69.4 20.6 2140 6.7  j15.3 11.2  j2.7 21.9 66.2 19.5 2170 5.3  j19.6 11.6  j1.4 20.7 70.6 20.5 [1] ZS and ZL defined in Figure 1. [2] at 3 dB gain compression. All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 July 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 4 of 15 BLC9G21LS-60AV Power LDMOS transistor Table 10. Typical impedance of peak device Measured load-pull data of peak device; IDq = 150 mA (peak); VDS = 28 V. f ZS [1] ZL [1] PL [2] D [2] Gp [2] (MHz) () () (W) (%) (dB) Maximum power load 1805 2.2  j6.6 6.5  j7.7 46.2 63.4 15.9 1842 1.8  j6.9 6.5  j7.7 44.8 63.0 16.4 1880 2.5  j7.0 6.5  j7.7 43.0 61.4 16.2 1930 2.5  j7.9 6.5  j7.7 41.8 60.9 16.4 1960 2.8  j8.0 6.9  j8.6 41.9 60.1 16.3 1990 2.8  j8.4 6.9  j8.6 43.8 62.4 16.3 2110 5.1  j12.6 5.7  j8.0 43.8 62.5 17.7 2140 4.9  j12.6 5.9  j8.9 42.2 59.0 17.6 2170 5.8  j14.8 5.9  j8.9 43.1 60.9 17.8 Maximum drain efficiency load 1805 2.2  j6.6 10.3  j1.2 32.0 74.9 17.8 1842 1.8  j6.9 9.2  j1.0 31.1 74.5 18.1 1880 2.5  j7.0 9.0  j2.0 30.4 69.8 18.2 1930 2.5  j7.9 7.3  j1.5 28.6 69.6 18.3 1960 2.8  j8.0 7.1  j2.3 29.6 68.5 18.1 1990 2.8  j8.4 7.3  j1.5 28.6 72.7 18.8 2110 5.1  j12.6 7.0  j4.0 32.0 70.3 19.8 2140 4.9  j12.6 6.0  j4.1 30.4 67.8 19.7 2170 5.8  j14.8 6.0  j4.1 30.6 70.5 20.2 [1] ZS and ZL defined in Figure 1. [2] at 3 dB gain compression. drain ZL gate ZS 001aaf059 Fig 1. BLC9G21LS-60AV Product data sheet Definition of transistor impedance All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 July 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 5 of 15 BLC9G21LS-60AV Power LDMOS transistor 7.3 Recommended impedances for Doherty design Table 11. Typical impedance of main device at 1 : 1 load Measured load-pull data of main device; IDq = 100 mA (main); VDS = 28 V. ZS [1] f ZL [1] D [3] PL [2] Gp [3] (MHz) () () (W) (%) (dB) 1805 2.4  j6.9 13.6  j8.2 30.2 67.0 19.7 1842 2.3  j7.1 13.6  j8.2 29.4 66.6 19.9 1880 2.6  j7.9 13.6  j8.2 28.6 65.6 20.0 1930 2.6  j9.3 13.6  j8.2 26.8 62.8 20.1 1960 3.2  j9.0 13.6  j8.2 27.5 63.6 20.0 1990 3.4  j9.6 12.2  j6.9 26.6 61.9 19.9 2110 4.7  j15.9 12.2  j6.9 27.4 66.4 21.9 2140 6.7  j15.3 10.1  j6.8 27.5 62.6 21.5 2170 5.3  j19.6 11.0  j8.0 28.5 64.9 21.8 [1] ZS and ZL defined in Figure 1. [2] at 3 dB gain compression. [3] at PL(AV) = 34 dBm. Table 12. Typical impedance of main device at 1 : 2.7 load Measured load-pull data of main device; IDq = 100 mA (main); VDS = 28 V. BLC9G21LS-60AV Product data sheet f ZS [1] ZL [1] PL [2] D [3] Gp [3] (MHz) () () (W) (%) (dB) 1805 2.4  j6.9 23.6  j0.0 20.5 73.3 21.2 1842 2.3  j7.1 20.0  j0.0 21.7 73.0 21.2 1880 2.6  j7.9 19.6  j3.1 18.9 71.5 21.4 1930 2.6  j9.3 17.0  j2.4 18.5 67.9 21.5 1960 3.2  j9.0 14.8  j2.0 19.7 69.3 21.3 1990 3.4  j9.6 15.0  j0.0 20.0 66.4 21.3 2110 4.7  j15.9 13.0  j1.6 17.7 69.4 23.6 2140 6.7  j15.3 11.2  j2.7 21.9 66.2 22.5 2170 5.3  j19.6 11.6  j1.4 20.7 70.6 23.5 [1] ZS and ZL defined in Figure 1. [2] at 3 dB gain compression. [3] at PL(AV) = 34 dBm. All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 July 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 6 of 15 BLC9G21LS-60AV Power LDMOS transistor 7.4 Test circuit 50 mm 50 mm C4 C1 C5 C1 R2 C4 C1 C4 C1 C3 C2 R1 76 mm C1 C3 C1 C4 R2 C1 C4 C5 C4 C1 amp00342 Printed-Circuit Board (PCB): Rogers RO4350B; thickness = 0.508 mm. See Table 13 for a list of components. Fig 2. Component layout Table 13. List of components See Figure 2 for component layout. BLC9G21LS-60AV Product data sheet Component Description Value C1 multilayer ceramic chip capacitor 30 pF [1] C2 multilayer ceramic chip capacitor 20 pF [1] C3 multilayer ceramic chip capacitor 3.9 pF [1] C4 multilayer ceramic chip capacitor 10 F, 50 V [2] C5 electrolytic capacitor 2200 F, 63 V R1 resistor 50  SMD 2512 R2 resistor 5.1  SMD 0805 [1] American Technical Ceramics type 600F or capacitor of same quality. [2] Murata or capacitor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 July 2017 Remarks © Ampleon Netherlands B.V. 2017. All rights reserved. 7 of 15 BLC9G21LS-60AV Power LDMOS transistor 7.5 Graphical data 7.5.1 Pulsed CW amp00343 19 80 Gp (dB) ηD (%) ηD 18 amp00344 18 (1) RLin (dB) 60 16 40 14 20 12 0 10 (2) (1) (1) (2) (2) (3) (3) (3) 17 16 Gp 15 0 10 20 30 40 50 60 PL (W) 70 0 VDS = 28 V; IDq = 100 mA (main device); VGS(amp)peak = 0.8 V. 10 20 (1) f = 1930 MHz (2) f = 1960 MHz (2) f = 1960 MHz (3) f = 1990 MHz (3) f = 1990 MHz Power gain and drain efficiency as function of output power; typical values BLC9G21LS-60AV Product data sheet 40 50 60 PL (W) 70 VDS = 28 V; IDq = 100 mA (main device); VGS(amp)peak = 0.8 V. (1) f = 1930 MHz Fig 3. 30 Fig 4. Input return loss as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 July 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 8 of 15 BLC9G21LS-60AV Power LDMOS transistor 7.5.2 1-Carrier W-CDMA amp00345 19 Gp (dB) 60 ηD (1) (2) (3) 18.6 (1) 50 18 (1) (2) (3) 18.2 amp00346 20 RLin (dB) ηD (%) 40 (2) Gp 16 17.8 30 17.4 20 14 17 10 0 5 10 15 20 PL (W) (3) 12 25 0 VDS = 28 V; IDq = 100 mA (main device); VGS(amp)peak = 0.8 V. 5 10 20 PL (W) 25 VDS = 28 V; IDq = 100 mA (main device); VGS(amp)peak = 0.8 V. (1) f = 1930 MHz (1) f = 1930 MHz (2) f = 1960 MHz (2) f = 1960 MHz (3) f = 1990 MHz Fig 5. 15 (3) f = 1990 MHz Power gain and drain efficiency as function of output power; typical values Fig 6. Input return loss as a function of output power; typical values amp00347 -25 ACPR5M (dBc) ACPR5M (1) (2) (3) -35 -25 ACPR10M (dBc) -35 -45 -45 ACPR10M (1) (2) (3) -55 -55 -65 -65 0 5 10 15 20 PL (dBm) 25 VDS = 28 V; IDq = 100 mA (main device); VGS(amp)peak = 0.8 V. (1) f = 1930 MHz (2) f = 1960 MHz (3) f = 1990 MHz Fig 7. Adjacent channel power ratio (5 MHz) and adjacent channel power ratio (10 MHz) as function of output power; typical values BLC9G21LS-60AV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 July 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 9 of 15 BLC9G21LS-60AV Power LDMOS transistor 7.5.3 2-Tone VBW amp00348 0 IMD (dBc) -16 (1) (2) IMD3 -32 (1) (2) IMD5 -48 IMD7 (1) (2) -64 -80 1 10 102 carrier spacing (MHz) 103 VDS = 28 V; IDq = 100 mA (main device); VGS(amp)peak = 0.8 V; fc = 1960 MHz. (1) IMD low (2) IMD high Fig 8. BLC9G21LS-60AV Product data sheet VBW capability in Doherty demo board All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 July 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 10 of 15 BLC9G21LS-60AV Power LDMOS transistor 8. Package outline Air cavity plastic earless flanged package; 6 leads SOT1275-1 D F A 7 w1 D1 B L U1 b1 v B A c H1 5 1 2 6 y Į Z1 Z U2 H E1 E A 3 4 b e Q w2 0 B 5 10 mm y v w1 w2 0.1 0.5 0.5 0.5 U2 Z Z1 Į scale Dimensions Unit mm A max 4.01 nom min 3.40 b b1 3.94 1.14 c D D1 E 0.178 20.42 20.37 9.80 E1 e 9.75 F H H1 L Q(1) U1 1.14 19.53 12.80 25.40 1.68 20.70 9.91 3.17 5.79 65° 0.94 19.33 12.60 25.20 1.45 20.50 9.70 2.67 5.29 61° 8.89 3.68 0.89 0.127 20.12 20.17 9.50 9.55 Note 1. Dimension Q is measured 0.1 mm away from the flange. 2. Ringframe and/or ringframe glue shall not overhang at the side of the flange. Outline version References IEC JEDEC JEITA European projection Issue date 16-11-15 17-04-13 SOT1275-1 Fig 9. sot1275-1_po Package outline SOT1275-1 BLC9G21LS-60AV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 July 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 11 of 15 BLC9G21LS-60AV Power LDMOS transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. Table 14. ESD sensitivity ESD model Class Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002 C2A [1] Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001 2 [2] [1] CDM classification C2A is granted to any part that passes after exposure to an ESD pulse of 500 V, but fails after exposure to an ESD pulse of 750 V. [2] HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V, but fails after exposure to an ESD pulse of 4000 V. 10. Abbreviations Table 15. Abbreviations Acronym Description 3GPP 3rd Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal-Oxide Semiconductor MTF Median Time to Failure PAR Peak-to-Average Ratio SMD Surface Mounted Device VBW Video Bandwidth VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 16. Revision history Document ID Release date Data sheet status Change notice Supersedes BLC9G21LS-60AV v.1 20170706 - - BLC9G21LS-60AV Product data sheet Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 July 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 12 of 15 BLC9G21LS-60AV Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLC9G21LS-60AV Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 July 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 13 of 15 BLC9G21LS-60AV Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’s standard warranty and Ampleon’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. 13. Contact information For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales BLC9G21LS-60AV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 July 2017 © Ampleon Netherlands B.V. 2017. All rights reserved. 14 of 15 BLC9G21LS-60AV Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 7.5.1 7.5.2 7.5.3 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4 Ruggedness in Doherty operation . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Recommended impedances for Doherty design 6 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 8 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 9 2-Tone VBW . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Handling information. . . . . . . . . . . . . . . . . . . . 12 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon Netherlands B.V. 2017. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 6 July 2017 Document identifier: BLC9G21LS-60AV