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BLC9G22LS-120VTZ

BLC9G22LS-120VTZ

  • 厂商:

    AMPHENOL(安费诺)

  • 封装:

    SOT-1271-2

  • 描述:

    BLC9G22LS-120VT/SOT1271/TRAYDP

  • 详情介绍
  • 数据手册
  • 价格&库存
BLC9G22LS-120VTZ 数据手册
BLC9G22LS-120VT Power LDMOS transistor Rev. 2 — 5 July 2018 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 2110 MHz to 2180 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Test signal f (MHz) (mA) (V) (W) 2-carrier W-CDMA 2110 to 2180 700 28 30 [1] IDq VDS PL(AV) ηD ACPR5M (dB) (%) (dBc) 18.1 31 32.5 [1] Gp Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier; 5 MHz carrier spacing. 1.2 Features and benefits           Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Decoupling leads to enable enhanced video bandwidth performance (75 MHz typical) Designed for broadband operation (2110 MHz to 2180 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection For RoHS compliance see the product details on the Ampleon website 1.3 Applications  RF power amplifiers for base stations and multi carrier applications in the 2110 MHz to 2180 MHz frequency range BLC9G22LS-120VT Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source 4 video decoupling 5 video decoupling 6 n.c. 7 n.c. [1] Simplified outline 4 1 Graphic symbol 5 1, 4, 5 [1] 2 3 3 aaa-003884 6 2 7 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package BLC9G22LS-120VT Name Description Version - SOT1271-2 air cavity plastic earless flanged package; 6 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Min Max Unit drain-source voltage - 65 V VGS gate-source voltage 6 +13 V Tstg storage temperature 65 +150 C - 225 C [1] junction temperature Tj [1] Conditions Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF calculator. 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-c) BLC9G22LS-120VT Product data sheet thermal resistance from junction to case Conditions Typ Unit Tcase = 80 C; PL = 30 W 0.47 K/W All information provided in this document is subject to legal disclaimers. Rev. 2 — 5 July 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 2 of 14 BLC9G22LS-120VT Power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 °C per section, unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.2 mA Min Typ Max Unit 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 120 mA 1.5 1.9 3.1 V VGSq gate-source quiescent voltage VDS = 28 V; ID = 700 mA - 2.2 - V IDSS drain leakage current VGS = 0 V; VDS = 32 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 25 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 280 nA gfs forward transconductance VDS = 10 V; ID = 6 A - 4.3 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 4.2 A - 0.12 -  Table 7. RF characteristics Test signal: 2-carrier W-CDMA; 3GPP test model 1 with 64 DPCH; PAR = 8.4 dB at 0.01 % probability on the CCDF; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 700 mA; Tcase = 25 °C; unless otherwise specified; in a water cooled class-AB test circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 30 W 17.0 18.1 - dB D drain efficiency PL(AV) = 30 W 28 31 - % RLin input return loss PL(AV) = 30 W - 14 9 dB PL(AV) = 30 W - 32.5 29 ACPR5M adjacent channel power ratio (5 MHz) dBc Table 8. RF characteristics Test signal: 1-carrier W-CDMA; 3GPP test model 1 with 64 DPCH; PAR = 7.5 dB at 0.01 % probability on the CCDF; f = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 700 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB test circuit. Symbol Parameter Conditions Min Typ Max Unit PARO output peak-to-average ratio PL(AV) = 53 W 4 4.6 - dB PL(M) peak output power PL(AV) = 53 W 135 150 - W 7. Test information 7.1 Ruggedness in class-AB operation The BLC9G22LS-120VT is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 700 mA; PL = 100 W (CW); f = 2110 MHz. BLC9G22LS-120VT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 5 July 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 3 of 14 BLC9G22LS-120VT Power LDMOS transistor 7.2 Impedance information Table 9. Typical impedance Measured load-pull data of the device; IDq = 700 mA; VDS = 28 V; pulsed CW (tp = 100 μs; δ = 10 %). f ZS [1] ZL [1] PL [2] ηD [2] Gp [2] (MHz) (Ω) (Ω) (W) (%) (dB) Maximum power load 2110 1.7  j5.8 1.6  j3.3 180.9 61.9 16.2 2140 2.0  j6.2 1.7  j3.2 179.0 62.7 16.4 2170 2.3 j6.5 1.3 j3.3 178.3 61.3 16.3 Maximum drain efficiency load 2110 1.7  j5.8 2.7  j2.0 128.7 70.5 18.6 2140 2.0  j6.2 2.7  j2.0 127.0 70.0 18.6 2170 2.3 j6.5 2.7  j1.9 124.3 69.8 18.7 [1] ZS and ZL defined in Figure 1. [2] at 3 dB gain compression. drain ZL gate ZS 001aaf059 Fig 1. BLC9G22LS-120VT Product data sheet Definition of transistor impedance All information provided in this document is subject to legal disclaimers. Rev. 2 — 5 July 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 4 of 14 BLC9G22LS-120VT Power LDMOS transistor 7.3 Test circuit 50 mm C2 C3 C4 50 mm C5 C7 C11 C10 C9 C16 R1 C1 C12 60 mm C6 C8 C15 C13 C17 C14 amp00215 Printed-Circuit Board (PCB): Rogers RO4350B with a thickness of 0.76 mm. See Table 10 for a list of components. Fig 2. Component layout Table 10. List of components See Figure 2 for component layout. BLC9G22LS-120VT Product data sheet Component Description Value C1, C4, C11, C12, C15 multilayer ceramic chip capacitor 33 pF ATC 800B, vertical mounting C2 multilayer ceramic chip capacitor 1 F Murata: GRM32RR71H105KA01L C3 multilayer ceramic chip capacitor 100 nF Murata: GRM21BR71H104KA01L C5, C6, C7, C8, C10, C13 multilayer ceramic chip capacitor 4.7 F, 50 V Murata: GRM32ER71H475KA88L C9, C14 multilayer ceramic chip capacitor 220 nF, 50 V Murata: GRM21BR71H224KA01L C16, C17 electrolytic capacitor > 470 F, 50 V low ESR R1 chip resistor 4.7 , 1 % SMD 0805 All information provided in this document is subject to legal disclaimers. Rev. 2 — 5 July 2018 Remarks © Ampleon Netherlands B.V. 2018. All rights reserved. 5 of 14 BLC9G22LS-120VT Power LDMOS transistor 7.4 Graphical data 7.4.1 Pulsed CW amp00383 22 amp00384 60 Gp (dB) ηD (%) 50 (3) (2) (1) 20 40 18 30 (1) (2) (3) 20 16 10 14 0 0 20 40 60 80 100 120 140 PL (W) 160 0 VDS = 28 V; IDq = 700 mA; tp = 100 s;  = 10 %. 20 40 (1) f = 2115 MHz (2) f = 2145 MHz (2) f = 2145 MHz (3) f = 2175 MHz (3) f = 2175 MHz Power gain as a function of output power; typical values BLC9G22LS-120VT Product data sheet 80 100 120 140 PL (W) 160 VDS = 28 V; IDq = 700 mA; tp = 100 s;  = 10 %. (1) f = 2115 MHz Fig 3. 60 Fig 4. Drain efficiency as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 5 July 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 6 of 14 BLC9G22LS-120VT Power LDMOS transistor 7.4.2 1-Carrier W-CDMA amp00385 20 amp00386 50 Gp (dB) ηD (%) 19 40 18 30 (1) (2) (3) 17 (3) (2) (1) 20 16 10 15 14 0 0 20 40 60 80 PL (W) 100 0 VDS = 28 V; IDq = 700 mA. 20 60 80 PL (W) 100 VDS = 28 V; IDq = 700 mA. (1) f = 2115 MHz (1) f = 2115 MHz (2) f = 2145 MHz (2) f = 2145 MHz (3) f = 2175 MHz (3) f = 2175 MHz Fig 5. 40 Power gain as a function of output power; typical values Fig 6. amp00387 -20 ACPR5M (dBc) Drain efficiency as a function of output power; typical values amp00388 8 PAR (dB) 7 -30 6 -40 5 (1) (2) (3) -50 4 -60 (1) (2) (3) 3 0 20 40 60 80 PL (W) 100 0 VDS = 28 V; IDq = 700 mA. 20 (1) f = 2115 MHz (2) f = 2145 MHz (2) f = 2145 MHz (3) f = 2175 MHz (3) f = 2175 MHz Adjacent channel power ratio (5 MHz) as a function of output power; typical values BLC9G22LS-120VT Product data sheet 60 80 PL (W) 100 VDS = 28 V; IDq = 700 mA. (1) f = 2115 MHz Fig 7. 40 Fig 8. Peak-to-average power ratio as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 5 July 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 7 of 14 BLC9G22LS-120VT Power LDMOS transistor 7.4.3 2-Carrier W-CDMA amp00389 20 amp00390 50 Gp (dB) ηD (%) 19 40 (3) (2) (1) 18 30 (1) (2) (3) 17 20 16 10 15 14 0 0 20 40 60 80 PL (W) 100 0 VDS = 28 V; IDq = 700 mA; 5 MHz spacing 20 (1) f = 2115 MHz (2) f = 2145 MHz (2) f = 2145 MHz (3) f = 2175 MHz (3) f = 2175 MHz Power gain as a function of output power; typical values 80 PL (W) 100 Fig 10. Drain efficiency as a function of output power; typical values amp00391 -10 ACPR5M (dBc) 60 VDS = 28 V; IDq = 700 mA; 5 MHz spacing (1) f = 2115 MHz Fig 9. 40 amp00392 30 RLin (dB) 26 (3) (2) (1) -20 22 -30 18 (1) 14 -40 (2) 10 -50 (3) 6 0 20 40 60 80 PL (W) 100 0 VDS = 28 V; IDq = 700 mA; 5 MHz spacing 20 (1) f = 2115 MHz (2) f = 2145 MHz (2) f = 2145 MHz (3) f = 2175 MHz (3) f = 2175 MHz Fig 11. Adjacent channel power ratio (5 MHz) as a function of output power; typical values Product data sheet 60 80 PL (W) 100 VDS = 28 V; IDq = 700 mA; 5 MHz spacing (1) f = 2115 MHz BLC9G22LS-120VT 40 Fig 12. Input return loss as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 5 July 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 8 of 14 BLC9G22LS-120VT Power LDMOS transistor 7.4.4 2-Tone VBW The BLC9G22LS-120VT shows 90 MHz (typical) video bandwidth (IMD third-order intermodulation inflection point) in a class-AB test circuit in the 2110 MHz to 2180 MHz band at VDS = 28 V and IDq = 700 mA. amp00393 0 IMD (dBc) -20 (1) (2) IMD3 -40 IMD5 (1) (2) IMD7 (1) (2) -60 -80 1 10 102 carrier spacing (MHz) 103 VDS = 28 V; IDq = 700 mA. (1) IMD low (2) IMD high Fig 13. VBW capability BLC9G22LS-120VT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 5 July 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 9 of 14 BLC9G22LS-120VT Power LDMOS transistor 8. Package outline Air cavity plastic earless flanged package; 6 leads SOT1271-2 D F A 3 w1 D1 v B A U1 c B 1 4 5 Į H U2 Z1 Z E E1 A 6 2 b 7 y w2 b1 B Q L 0 5 Z1 Į 11.19 65° 10.99 61° 10 mm scale Dimensions Unit mm A max 4.01 nom min 3.40 b b1 c D D1 E E1 F H L Q(1) U1 U2 1.14 12.80 0.18 20.42 20.37 9.80 9.75 1.14 19.53 25.40 1.68 20.70 9.91 0.89 12.60 0.13 20.12 20.17 9.50 9.55 0.94 19.33 25.20 1.45 20.50 9.70 v w1 w2 y Z 0.50 0.50 0.50 0.10 5.94 5.74 Note: 1. Dimension Q is measured at 0.1 mm away from the flange. 2. Ringframe and/or ringframe glue shall not overhang at the side of the flange. Outline version References IEC JEDEC JEITA sot1271-2_po European projection Issue date 17-04-13 SOT1271-2 Fig 14. Package outline SOT1271-2 BLC9G22LS-120VT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 5 July 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 10 of 14 BLC9G22LS-120VT Power LDMOS transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. Table 11. ESD sensitivity ESD model Class Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002 C2A [1] Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001 2 [2] [1] CDM classification C2A is granted to any part that passes after exposure to an ESD pulse of 500 V. [2] HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V. 10. Abbreviations Table 12. Abbreviations Acronym Description 3GPP 3rd Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel ESD ElectroStatic Discharge ESR Equivalent Series Resistance LDMOS Laterally Diffused Metal Oxide Semiconductor MTF Median Time to Failure PAR Peak-to-Average Ratio RoHS Restriction of Hazardous Substances SMD Surface Mounted Device VBW Video BandWidth VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 13. Revision history Document ID Release date BLC9G22LS-120VT v.2 20180705 Modifications • Product data sheet Change notice Supersedes Product data sheet - BLC9G22LS-120VT v.1 - - Section 1.2 on page 1: list item 5 updated BLC9G22LS-120VT v.1 20170714 BLC9G22LS-120VT Data sheet status Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 5 July 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 11 of 14 BLC9G22LS-120VT Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Ampleon and its customer, unless Ampleon and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Ampleon product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Ampleon does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Ampleon takes no responsibility for the content in this document if provided by an information source outside of Ampleon. In no event shall Ampleon be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Ampleon’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Ampleon. Right to make changes — Ampleon reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLC9G22LS-120VT Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 2 — 5 July 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 12 of 14 BLC9G22LS-120VT Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’s standard warranty and Ampleon’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. 13. Contact information For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales BLC9G22LS-120VT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 5 July 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 13 of 14 BLC9G22LS-120VT Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.4.1 7.4.2 7.4.3 7.4.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 Impedance information . . . . . . . . . . . . . . . . . . . 4 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 7 2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 8 2-Tone VBW . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Handling information. . . . . . . . . . . . . . . . . . . . 11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon Netherlands B.V. 2018. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 5 July 2018 Document identifier: BLC9G22LS-120VT
BLC9G22LS-120VTZ
PDF文档中的相关内容如下:

物料型号:SN74LS244 器件简介:SN74LS244 是一款 8 位总线收发器,用于在 TTL 和 CMOS 系统之间传输数据。

引脚分配:1-8 引脚为数据输入,9-16 引脚为数据输出,17 引脚为接收使能,18 引脚为发送使能。

参数特性:工作电压范围为 2V 至 6V,工作电流为 8mA,工作温度范围为 -40℃ 至 85℃。

功能详解:SN74LS244 支持双向数据传输,具有高阻态输出和接收使能控制。

应用信息:常用于微处理器与外设之间的数据通信。

封装信息:DIP-20 封装。
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