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BLC9H10XS-60PZ

BLC9H10XS-60PZ

  • 厂商:

    AMPHENOL(安费诺)

  • 封装:

    SOT-1273-1

  • 描述:

    BLC9H10XS-60P/SOT1273/TRAYDP

  • 数据手册
  • 价格&库存
BLC9H10XS-60PZ 数据手册
BLC9H10XS-60P Power LDMOS transistor Rev. 2 — 29 May 2018 Product data sheet 1. Product profile 1.1 General description 60 W LDMOS packaged symmetric power transistor for base station applications at frequencies from 400 MHz to 1000 MHz. Table 1. Typical performance 940 MHz Typical RF performance at Tcase = 25 °C in a class-AB demo circuit. VDS = 50 V; IDq = 115 mA (per section). Test signal 1-carrier W-CDMA [1] f VDS PL Gp ηD ACPR (MHz) (V) (dBm) (dB) (%) (dBc) 925 to 960 50 35 16.5 13 47 [1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01% probability on CCDF. Table 2. Typical performance 859 MHz Typical RF performance at Tcase = 25 °C in a class-AB demo circuit. VDS = 48 V; IDq = 125 mA (per section). Test signal 1-carrier W-CDMA [1] f VDS PL Gp ηD ACPR (MHz) (V) (dBm) (dB) (%) (dBc) 785 to 960 48 35 16.1 11.9 46.6 [1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01% probability on CCDF. 1.2 Features and benefits        Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (400 MHz to 1000 MHz) For RoHS compliance see the product details on the Ampleon website 1.3 Applications RF power amplifiers for base stations and multi carrier applications in the 400 MHz to 1000 MHz frequency range BLC9H10XS-60P Power LDMOS transistor 2. Pinning information Table 3. Pinning Pin Description 1 drain1 2 drain2 3 gate1 4 gate2 5 Simplified outline 1 1 2 3 5 4 [1] source 3 [1] Graphic symbol 2 4 sym117 Connected to flange. 3. Ordering information Table 4. Ordering information Type number Package Name BLC9H10XS-60P - Description Version air cavity plastic earless flanged package; 4 leads SOT1273-1 4. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage - 105 V VGS gate-source voltage 6 +11 V Tstg storage temperature 65 +150 C Tj junction temperature Tcase case temperature [1] Conditions operating [1] - 225 C [1] 40 +125 C Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF calculator. 5. Thermal characteristics BLC9H10XS-60P Product data sheet Table 6. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case VDS = 50 V; IDq = 115 mA (per section); Tcase = 80 C; PL = 3.16 W 0.8 K/W All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 May 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 2 of 14 BLC9H10XS-60P Power LDMOS transistor 6. Characteristics Table 7. DC characteristics Tj = 25 °C; per section unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.22 mA Min Typ Max Unit 105 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 22 mA 1.5 2.0 2.5 V VGSq gate-source quiescent voltage VDS = 50 V; ID = 110 mA - 2.2 - V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 1.4 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 3.6 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 140 nA gfs forward transconductance VDS = 10 V; ID = 1.1 A - 1.5 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 0.77 A - 1070 1328 m Table 8. RF characteristics Test signal: 1-carrier W-CDMA; PAR = 9.6 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 1 to 64 DPCH; f1 = 929.5 MHz; f2 = 954.5 MHz; RF performance at VDS = 50 V; IDq = 110 mA; Tcase = 25 °C; unless otherwise specified; in a class AB production test circuit at frequencies from 927 MHz to 957 MHz. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 3.2 W 15.3 16.3 - dB RLin input return loss PL(AV) = 3.2 W - 24 17 dB D drain efficiency PL(AV) = 3.2 W 11.5 12.5 - % ACPR adjacent channel power ratio PL(AV) = 3.2 W - 49 44 dBc Table 9. RF characteristics Test signal: 1-carrier W-CDMA; PAR = 9.6 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 1 to 64 DPCH; f = 929.5 MHz; RF performance at VDS = 50V; IDq = 110 mA; Tcase = 25 °C; unless otherwise specified; in a class AB production test circuit at frequencies from 927 MHz to 957 MHz. Symbol Parameter Conditions Min Typ Max Unit PARO output peak-to-average ratio PL(AV) = 17.4 W 6.1 6.8 - dB PL(M) peak output power PL(AV) = 17.4 W 70 102 - W 7. Test information 7.1 Ruggedness in class-AB operation The BLC9H10XS-60P is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: • VDS = 52 V; IDq = 115 mA (per section); f = 925 MHz; PL = 19 W; 1T-W-CDMA • VDS = 52 V; IDq = 115 mA (per section); f = 925 MHz; PL = 60 W; pulsed CW (tp = 100 s;  = 10 %) BLC9H10XS-60P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 May 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 3 of 14 BLC9H10XS-60P Power LDMOS transistor 7.2 Impedance information Table 10. Typical impedance of main device Measured load-pull data of main device; IDq = 110 mA (per section); VDS = 50 V; pulsed CW (tp = 100 μs; δ = 10 %). f ZS [1] ZL [1] PL [2] ηD [2] Gp [2] (MHz) (Ω) (Ω) (W) (%) (dB) Maximum power load 600 4.81 + j13.6 21.86  j0.92 55.1 62.9 16.8 698 4.97 + j11.1 13.94 + j3.05 46.8 55.7 15.3 720 4.93 + j10.6 14.52 + j5.94 49.2 62.9 15.9 746 4.93 + j10.1 13.04 + j7.01 49.3 64.3 15.8 757 4.97 + j9.96 10.67 + j6.38 50.9 62.0 15.2 769 4.98 + j9.75 11.88 + j5.04 52.0 61.6 15.0 790 4.95 + j9.32 16.62 + j4.46 51.8 63.4 15.1 800 4.96 + j9.11 16.68 + j4.43 51.5 63.1 14.9 820 4.86 + j8.73 15.09 + j5.39 49.7 62.7 14.9 869 4.83 + j7.86 15.02 + j4.25 48.0 58.8 14.0 880 4.76 + j7.64 17.58 + j5.87 47.8 60.5 14.3 894 4.76 + j7.41 15.40 + j4.05 46.6 57.2 13.8 925 4.64 + j6.90 14.04 + j6.92 45.5 60.2 14.1 942 4.59 + j6.55 14.94 + j6.98 45.4 59.8 13.9 960 4.55 + j6.23 11.33 + j6.56 45.8 59.7 13.6 1000 4.46 + j5.57 11.26 + j6.49 46.6 60.8 13.3 Maximum drain efficiency load BLC9H10XS-60P Product data sheet 600 4.78 + j13.50 25.42 + j5.49 51.0 68.5 17.9 698 4.89 + j10.98 21.35 + j17.90 34.0 66.5 17.9 720 4.85 + j10.57 17.70 + j13.04 39.6 67.5 17.2 746 4.80 + j10.02 14.55 + j15.59 34.5 68.6 17.6 757 4.78 + j9.79 12.05 + j15.07 34.6 70.0 17.5 769 4.74 + j9.57 12.02 + j15.05 35.0 70.5 17.6 800 4.72 + j9.14 11.18 + j14.21 35.9 71.4 17.2 805 4.71 + j8.92 11.20 + j14.23 35.3 71.0 17.1 820 4.64 + j8.56 11.08 + j14.07 34.3 68.5 17.0 869 4.52 + j7.57 7.82 + j16.59 24.0 68.2 17.5 880 4.51 + j7.45 8.69 + j13.51 33.1 68.1 16.5 894 4.47 + j7.17 8.51 + j14.09 31.4 68.0 16.6 925 4.41 + j6.71 8.50 + j14.03 32.6 69.0 16.4 942 4.36 + j6.34 8.44 + j14.04 32.3 68.5 16.2 960 4.27 + j6.01 7.19 + j13.36 31.9 69.4 16.2 1000 4.17 + j5.32 7.17 + j13.26 31.7 69.9 16.1 [1] ZS and ZL defined in Figure 1. [2] At 3 dB gain compression. All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 May 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 4 of 14 BLC9H10XS-60P Power LDMOS transistor drain 1 gate 1 Zi ZL gate 2 drain 2 001aan207 Fig 1. Definition of transistor impedance 7.3 Test circuit 110 mm C21 C19 C13 C3 R1 C1 R3 C11 C5 C9 C7 C17 C15 DRC2 C8 C16 C18 R4 80 mm DRC1 C10 C12 C2 C6 R2 C14 C4 C20 C22 amp00691 Printed-Circuit Board (PCB): RO3006: r = 6.15; thickness = 0.635 mm; thickness copper plating = 35 m. See Table 11 for a list of components. Fig 2. Component layout Table 11. List of components See Figure 2 for component layout. BLC9H10XS-60P Product data sheet Component Description C1, C2 multilayer ceramic chip capacitor 10 nF, 50 V Murata: Hi-Q SMD 0805 C3, C4 multilayer ceramic chip capacitor 4.7 F, 50 V Murata: Hi-Q SMD 1210 C5, C6, C7, C8, multilayer ceramic chip capacitor 82 pF, 250 V C13, C14, C17, C18 Murata: Hi-Q SMD 0805 C9, C10 multilayer ceramic chip capacitor 9.1 pF, 250 V Murata: Hi-Q SMD 0805 C11, C12 multilayer ceramic chip capacitor 2 pF, 250 V Murata: Hi-Q SMD 0805 C15, C16 multilayer ceramic chip capacitor 4.3 pF, 250 V Murata: Hi-Q SMD 0805 C19, C20 multilayer ceramic chip capacitor 4.7 F, 100V Murata: Hi-Q SMD 2220 All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 May 2018 Value Remarks © Ampleon Netherlands B.V. 2018. All rights reserved. 5 of 14 BLC9H10XS-60P Power LDMOS transistor Table 11. List of components …continued See Figure 2 for component layout. Component Description Value Remarks C21, C22 electrolytic capacitor 470 F, 100 V Panasonic: FK series R1, R2 resistor 5.6 , 1/6 W SMD 0805 R3, R4 resistor 50 , 16 W Anaren: C16A50Z4 DRC1, DRC2 hybrid coupler 3 dB, 90 Anaren: X3C09F1-03S 7.4 Graphical data 7.4.1 Pulsed CW amp00692 17 80 Gp (dB) ηD (%) (1) (2) (3) 16 amp00693 1.5 AM to PM (deg) 0.5 (3) (2) (1) 60 Gp -0.5 (3) (2) (1) 15 40 -1.5 14 20 -2.5 ηD 13 0 24 29 34 39 44 49 PL (dBm) -3.5 54 26 VDS = 50 V; IDq = 115 mA; tp = 100 s;  = 10 %. 30 (1) f = 925 MHz (2) f = 942.5 MHz (2) f = 942.5 MHz (3) f = 960 MHz (3) f = 960 MHz Power gain and drain efficiency as function of output power; typical values BLC9H10XS-60P Product data sheet 38 42 46 PL (dBm) 50 VDS = 50 V; IDq = 115 mA. (1) f = 925 MHz Fig 3. 34 Fig 4. Normalized AM to PM as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 May 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 6 of 14 BLC9H10XS-60P Power LDMOS transistor 7.4.2 1-Carrier W-CDMA Test signal: 3GPP test model 1; 1 to 64 DPCH (100 % clipping): PAR = 9.9 dB per carrier at 0.01 % probability on CCDF per carrier. amp00694 16.5 Gp (dB) 40 Gp (1) (2) (3) 15.5 amp00695 -30 ACPR5M (dBc) ηD (%) -35 30 (1) (2) (3) -40 14.5 20 (1) (2) (3) -45 13.5 10 -50 ηD 12.5 0 25 27.5 30 32.5 35 37.5 40 42.5 PL (dBm) -55 45 25 VDS = 50 V; IDq = 115 mA. 30 40 PL (dBm) 45 VDS = 50 V; IDq = 115 mA. (1) f = 925 MHz (1) f = 925 MHz (2) f = 942.5 MHz (2) f = 942.5 MHz (3) f = 960 MHz (3) f = 960 MHz Fig 5. 35 Power gain and drain efficiency as function of output power; typical values Fig 6. Adjacent channel power ratio (5 MHz) as a function of output power; typical values amp00696 12 PAR (dB) 10 8 (3) (2) (1) 6 4 2 0 28 30 32 34 36 38 40 42 PL (dBm) 44 VDS = 50 V; IDq = 115 mA. (1) f = 925 MHz (2) f = 942.5 MHz (3) f = 960 MHz Fig 7. Peak-to-average power ratio as a function of output power; typical values BLC9H10XS-60P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 May 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 7 of 14 BLC9H10XS-60P Power LDMOS transistor 7.4.3 2-Carrier W-CDMA Test signal: 3GPP test model 1; 1 to 64 DPCH (46 % clipping, 5 MHz spacing). amp00697 20 50 Gp (dB) 18 (1) (2) (3) (1) (2) (3) Gp amp00698 -20 ACPR5M (dBc) -25 ηD (%) 40 -30 16 30 -35 14 20 (3) (2) (1) -40 12 10 -45 ηD 10 0 25 30 35 40 45 PL (dBm) -50 50 0 VDS = 50 V; IDq = 115 mA. 10 30 40 PL (dBm) 50 VDS = 50 V; IDq = 115 mA. (1) f = 925 MHz (1) f = 925 MHz (2) f = 942.5 MHz (2) f = 942.5 MHz (3) f = 960 MHz (3) f = 960 MHz Fig 8. 20 Power gain and drain efficiency as function of output power; typical values Fig 9. Adjacent channel power ratio (5 MHz) as a function of output power; typical values 7.4.4 2-Tone VBW amp00699 0 IMD (dBc) -20 (1) (2) IMD3 -40 (1) (2) IMD5 IMD7 -60 (1) (2) -80 1 10 102 carrier spacing (MHz) 103 VDS = 50 V; IDq = 115 mA. (1) IMD low (2) IMD high Fig 10. VBW capability BLC9H10XS-60P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 May 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 8 of 14 BLC9H10XS-60P Power LDMOS transistor 8. Package outline Air cavity plastic earless flanged package; 4 leads SOT1273-1 D F A 5 D1 w1 U1 B B v A H1 c 1 2 y U2 H E1 E A 3 4 b w2 Q B e 0 10 mm 5 scale Dimensions Unit mm A max 4.01 nom min 3.40 b c D D1 E e E1 3.91 0.18 20.42 20.37 9.80 9.75 3.71 0.13 20.12 20.17 9.50 9.55 F H H1 Q(1) U1 U2 v 1.14 19.53 12.83 1.68 20.70 9.91 0.50 w1 w2 y 0.50 0.50 0.10 8.89 0.94 19.33 12.57 1.45 20.50 9.70 Note: 1. Dimension Q is measured at 0.1 mm away from the flange. 2. Ringframe and/or ringframe glue shall not overhang at the side of the flange. Outline version References IEC JEDEC JEITA sot1273-1_po European projection Issue date 17-01-12 SOT1273-1 Fig 11. Package outline SOT1273-1 BLC9H10XS-60P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 May 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 9 of 14 BLC9H10XS-60P Power LDMOS transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. Table 12. ESD sensitivity ESD model Class Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002 C3 [1] Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001 2 [2] [1] CDM classification C3 is granted to any part that passes after exposure to an ESD pulse of  1000 V. [2] HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V. 10. Abbreviations Table 13. Acronym BLC9H10XS-60P Product data sheet Abbreviations Description 3GPP 3rd Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal-Oxide Semiconductor MTF Median Time to Failure PAR Peak-to-Average Ratio RoHS Restriction of Hazardous Substances SMD Surface Mounted Device VBW Video BandWidth VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 May 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 10 of 14 BLC9H10XS-60P Power LDMOS transistor 11. Revision history Table 14. Revision history Document ID Release date Data sheet status Change notice Supersedes BLC9H10XS-60P v.2 20180529 Product data sheet - BLC9H10XS-60P v.1 Modifications BLC9H10XS-60P v.1 BLC9H10XS-60P Product data sheet • • • • • • Table 1 on page 1: updated table note Table 2 on page 1: updated table Section 7.1 on page 3: updated first list item Section 7.4.2 on page 7: updated first paragraph removed section 7.4.5. Group delay Table 12 on page 10: updated table 20180501 Preliminary data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 May 2018 - © Ampleon Netherlands B.V. 2018. All rights reserved. 11 of 14 BLC9H10XS-60P Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Ampleon and its customer, unless Ampleon and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Ampleon product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Ampleon does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Ampleon takes no responsibility for the content in this document if provided by an information source outside of Ampleon. In no event shall Ampleon be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Ampleon’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Ampleon. Right to make changes — Ampleon reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLC9H10XS-60P Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 May 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 12 of 14 BLC9H10XS-60P Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’s standard warranty and Ampleon’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. 13. Contact information For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales BLC9H10XS-60P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 May 2018 © Ampleon Netherlands B.V. 2018. All rights reserved. 13 of 14 BLC9H10XS-60P Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.4.1 7.4.2 7.4.3 7.4.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 Impedance information . . . . . . . . . . . . . . . . . . . 4 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 7 2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 8 2-Tone VBW . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Handling information. . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon Netherlands B.V. 2018. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 29 May 2018 Document identifier: BLC9H10XS-60P
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