BLF0910H9LS750PU

BLF0910H9LS750P Power LDMOS transistor Rev. 2 — 18 June 2019 Product data sheet 1. Product profile 1.1 General description A 750 W LDMOS power transistor for industrial applications at frequency of 915 MHz. The BLF0910H9LS750P is designed for high-power CW applications and is assembled in a high performance ceramic package. Table 1. Typical performance RF performance at VDS = 50 V; IDq = 50 mA per section in a class-AB application circuit. Test signal [1] f VDS PL Gp D (MHz) (V) (W) (dB) (%) 915 50 750 21.5 72.5 CW [2] 902 to 928 50 800 21 69 CW pulsed [3] 915 50 850 21.3 70 CW [1] Narrowband circuit. [2] Broadband circuit. [3] Broadband circuit: tp = 100 s;  = 10 %; tr = 150 ns; tf = 150 ns. 1.2 Features and benefits        High efficiency Easy power control Excellent ruggedness Integrated ESD protection Designed for broadband operation (902 MHz to 928 MHz) Internally input matched For RoHS compliance see the product details on the Ampleon website 1.3 Applications  Industrial applications in the 915 MHz ISM band  Professional applications in the 915 MHz ISM band BLF0910H9LS750P Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain1 2 drain2 3 gate1 4 gate2 5 Simplified outline 1 Graphic symbol 1 2 5 3 3 4 5 4 [1] source 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package BLF0910H9LS750P Name Description Version - SOT539B earless flanged balanced ceramic package; 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage - 108 V VGS gate-source voltage 6 +11 V Tstg storage temperature 65 +150 C Tj junction temperature - 225 C [1] [1] Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF calculator. 5. Thermal characteristics Table 5. BLF0910H9LS750P Product data sheet Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tcase = 90 C; PL = 750 W 0.15 K/W All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 June 2019 © Ampleon Netherlands B.V. 2019. All rights reserved. 2 of 14 BLF0910H9LS750P Power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 C; unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.4 mA Min Typ Max Unit 108 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 240 mA 1.5 2.1 2.5 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 44.5 - A IGSS gate leakage current VGS = 10 V; VDS = 0 V - - 280 nA RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 8.4 A - 90 - m Table 7. RF characteristics Test signal: CW pulsed; f = 915 MHz; RF performance at VDS = 50 V; IDq = 50 mA per section; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL = 750 W 20 21.5 - dB RLin input return loss PL = 750 W - 13 10 dB D drain efficiency PL = 750 W 62.5 65 - % 7. Test information 7.1 Ruggedness in class-AB operation The BLF0910H9LS750P is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 50 mA per section; PL = 750 W (CW); tested in band across predefined integer phase steps (narrowband circuit). 7.2 Impedance information Table 8. Typical impedance Measured load-pull ZS and ZL device impedances per section; IDq = 50 mA per section; VDS = 50 V; typical values unless otherwise specified. f ZS [1] ZL [1] (MHz) () () 915 1.7  2.3j 0.9 + 0.7j [1] BLF0910H9LS750P Product data sheet ZS and ZL defined in Figure 1. All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 June 2019 © Ampleon Netherlands B.V. 2019. All rights reserved. 3 of 14 BLF0910H9LS750P Power LDMOS transistor ZL drain 1 ZS gate 1 gate 2 ZS drain 2 ZL amp01005 Fig 1. Definition of transistor impedance 7.3 Test circuit broadband 130.3 mm C9 R3 C15 C13 C4 C11 R1 C2 C1 R5 C6 C8 80 mm C7 R2 C5 C12 C3 C10 C14 C16 R4 amp00907 Printed-Circuit Board (PCB): Rogers TC600; thickness = 0.635 mm. See Table 9 for a list of components. Fig 2. Component layout for class-AB production test broadband circuit BLF0910H9LS750P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 June 2019 © Ampleon Netherlands B.V. 2019. All rights reserved. 4 of 14 BLF0910H9LS750P Power LDMOS transistor Table 9. List of components For test circuit see Figure 2. Component Description C1, C2, C3, C6, C7, C8 multilayer ceramic chip capacitor 560 pF Value ATC 800B Remarks C4, C5 multilayer ceramic chip capacitor 1 F, 50 V GRM32RR71H105KA01L C9, C10 multilayer ceramic chip capacitor 47 pF ATC 100B C11, C12 multilayer ceramic chip capacitor 4.7 F, 100 V TDK: C5750X7R2A475KT/A C13, C14 electrolytic capacitor 10 F, 63 V C15, C16 electrolytic capacitor 470 F, 63 V R1, R2 chip resistor 10  SMD806 R3, R4 chip resistor 3.3  Bourns: CRS2512 R5 shunt resistor 0.01  Ohmite: FC4L110R010FER 7.4 Graphical data broadband circuit 7.4.1 CW amp00908 25 Gp (dB) 23 (1) (2) (3) 21 19 Gp 17 0 200 400 80 ηD (1) (2) (3) 600 800 PL (W) amp00909 25 ηD (%) Gp (dB) (1) (2) (3) 60 23 40 21 20 19 0 1000 (1) (2) (3) 0 45 47.5 50 52.5 55 57.5 PL (dBm) 60 VDS = 50 V; IDq = 50 mA per section. (2) f = 915 MHz (2) f = 915 MHz (3) f = 928 MHz (3) f = 928 MHz Power gain and drain efficiency as function of output power; typical values Product data sheet 20 Gp (1) f = 902 MHz BLF0910H9LS750P 60 40 (1) f = 902 MHz Fig 3. ηD (%) 17 VDS = 50 V; IDq = 50 mA per section. 80 ηD Fig 4. Power gain and drain efficiency as function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 June 2019 © Ampleon Netherlands B.V. 2019. All rights reserved. 5 of 14 BLF0910H9LS750P Power LDMOS transistor amp00910 60 PL (dBm) 57.5 amp00911 25 Gp (dB) 80 ηD (%) ηD 23 60 55 (3) (2) (1) 52.5 Gp 21 40 19 20 50 47.5 45 25 27.5 30 32.5 35 37.5 40 42.5 Pi (dBm) 17 900 45 VDS = 50 V; IDq = 50 mA per section. 905 910 915 920 925 f (MHz) 0 930 VDS = 50 V; IDq = 50 mA per section; PL = 800 W. (1) f = 902 MHz (2) f = 915 MHz (3) f = 928 MHz Fig 5. Output power as a function of input power; typical values Fig 6. amp00912 25 Power gain and drain efficiency as function of frequency; typical values amp00913 80 Gp (dB) ηD (%) 23 60 (1) (2) (3) (4) (5) 21 (1) (2) (3) (4) (5) 40 19 20 17 0 0 200 400 600 800 PL (W) 1000 0 200 400 600 VDS = 50 V; f = 915 MHz. VDS = 50 V; f = 915 MHz. (1) IDq = 250 mA per section (1) IDq = 250 mA per section (2) IDq = 200 mA per section (2) IDq = 200 mA per section (3) IDq = 150 mA per section (3) IDq = 150 mA per section (4) IDq = 100 mA per section (4) IDq = 100 mA per section (5) IDq = 50 mA per section Fig 7. Product data sheet 1000 (5) IDq = 50 mA per section Power gain as a function of output power; typical values BLF0910H9LS750P 800 PL (W) Fig 8. Drain efficiency as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 June 2019 © Ampleon Netherlands B.V. 2019. All rights reserved. 6 of 14 BLF0910H9LS750P Power LDMOS transistor amp00914 25 amp00915 80 Gp (dB) ηD (%) (3) 23 60 21 40 19 (3) (1) (2) 20 17 0 0 200 400 600 800 PL (W) 1000 0 IDq = 50 mA per section; f = 915 MHz. 200 400 600 800 PL (W) 1000 IDq = 50 mA per section; f = 915 MHz. (1) VDS = 50 V (1) VDS = 50 V (2) VDS = 45 V (2) VDS = 45 V (3) VDS = 40 V Fig 9. (1) (2) (3) VDS = 40 V Power gain as a function of output power; typical values Fig 10. Drain efficiency as a function of output power; typical values amp00916 25 amp00917 80 Gp (dB) ηD (%) 23 (1) (2) (3) (4) 60 (1) (2) (3) (4) 21 40 19 20 17 0 0 200 400 600 800 PL (W) 1000 VDS = 50 V; IDq = 50 mA per section; f = 915 MHz. 0 200 (1) T = 25 C (2) T = 35 C (2) T = 35 C (3) T = 45 C (3) T = 45 C (4) T = 55 C (4) T = 55 C BLF0910H9LS750P Product data sheet 600 800 PL (W) 1000 VDS = 50 V; IDq = 50 mA per section; f = 915 MHz. (1) T = 25 C Fig 11. Power gain as a function of output power; typical values 400 Fig 12. Drain efficiency as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 June 2019 © Ampleon Netherlands B.V. 2019. All rights reserved. 7 of 14 BLF0910H9LS750P Power LDMOS transistor amp00918 22 amp00919 71 ηD (%) 70.5 Gp (dB) 21.5 70 21 69.5 69 20.5 68.5 20 68 20 25 30 35 40 45 50 55 T (°C) 60 20 VDS = 50 V; IDq = 50 mA per section; f = 915 MHz; PL = 800 W. 25 30 35 40 45 50 55 T (°C) 60 VDS = 50 V; IDq = 50 mA per section; f = 915 MHz; PL = 800 W. Fig 13. Power gain as a function of temperature; typical values Fig 14. Drain efficiency as a function of temperature; typical values 7.5 Test circuit narrowband 41.78 mm 44.32 mm C15 C6 C2 + C13 - C11 C4 R1 C8 C1 C9 76.2 mm C10 C7 C3 R2 C5 C16 + C14 C12 amp00954 Printed-Circuit Board (PCB): Rogers TC600; thickness = 0.635 mm. See Table 10 for a list of components. Fig 15. Component layout for class-AB production test narrowband circuit BLF0910H9LS750P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 June 2019 © Ampleon Netherlands B.V. 2019. All rights reserved. 8 of 14 BLF0910H9LS750P Power LDMOS transistor Table 10. List of components For test circuit see Figure 15. Component Description Value Remarks C1, C2, C3, C8, multilayer ceramic chip capacitor 47 pF C9, C10, C11, C12 ATC 100B C4, C5, C13, C14 multilayer ceramic chip capacitor 1000 pF, 100 V Multicomp: MCMT21N02F101CT C6, C7 multilayer ceramic chip capacitor 1 F, 50 V C15, C16 electrolytic capacitor 470 F, 63 V R1, R2 chip resistor 10  GRM32RR71H105KA01L SMD1206 7.6 Graphical data narrowband circuit 7.6.1 CW amp00955 25 80 ηD Gp (dB) amp00956 25 ηD (%) 80 ηD Gp (dB) ηD (%) 23 60 23 60 21 40 21 40 Gp 19 Gp 20 17 0 200 400 600 800 PL (W) 0 1000 VDS = 50 V; IDq = 50 mA per section; f = 915 MHz. Fig 16. Power gain and drain efficiency as function of output power; typical values BLF0910H9LS750P Product data sheet 19 20 17 0 48 50 52 54 56 58 60 PL (dBm) 62 VDS = 50 V; IDq = 50 mA per section; f = 915 MHz. Fig 17. Power gain and drain efficiency as function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 June 2019 © Ampleon Netherlands B.V. 2019. All rights reserved. 9 of 14 BLF0910H9LS750P Power LDMOS transistor 8. Package outline Earless flanged balanced ceramic package; 4 leads SOT539B D A F 5 D1 D U1 H1 w2 1 c D 2 E1 U2 H E L 3 4 w3 b Q e 0 5 10 mm scale Dimensions Unit(1) w2 w3 0.25 0.25 max 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.089 1.275 0.405 inches nom 0.01 0.54 min 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.079 1.265 0.395 0.01 mm max nom min A b 4.7 11.81 c D D1 0.18 31.55 31.52 E E1 e 9.5 9.53 F H H1 L Q U1 U2 1.75 17.12 25.53 3.48 2.26 32.39 10.29 1.50 16.10 25.27 2.97 2.01 32.13 10.03 13.72 4.2 11.56 0.10 30.94 30.96 9.3 9.27 Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version References IEC JEDEC JEITA sot539b_po European projection Issue date 12-05-02 13-05-24 SOT539B Fig 18. Package outline SOT539B BLF0910H9LS750P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 June 2019 © Ampleon Netherlands B.V. 2019. All rights reserved. 10 of 14 BLF0910H9LS750P Power LDMOS transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. Table 11. ESD sensitivity ESD model Class Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002 C2A [1] Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001 2 [2] [1] CDM classification C2A is granted to any part that passes after exposure to an ESD pulse of 500 V. [2] HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V. 10. Abbreviations Table 12. Abbreviations Acronym Description CW Continuous Wave ESD ElectroStatic Discharge ISM Industrial, Scientific and Medical LDMOS Laterally Diffused Metal-Oxide Semiconductor MTF Median Time to Failure RoHS Restriction of Hazardous Substances SMD Surface Mounted Device VSWR Voltage Standing Wave Ratio 11. Revision history Table 13. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF0910H9LS750P v.2 20190618 Product data sheet - BLF0910H9LS750P v.1 - - Modifications: BLF0910H9LS750P v.1 BLF0910H9LS750P Product data sheet • Figure 1 on page 4: figure updated 20190322 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 June 2019 © Ampleon Netherlands B.V. 2019. All rights reserved. 11 of 14 BLF0910H9LS750P Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Ampleon and its customer, unless Ampleon and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Ampleon product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Ampleon does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Ampleon takes no responsibility for the content in this document if provided by an information source outside of Ampleon. In no event shall Ampleon be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Ampleon’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Ampleon. Right to make changes — Ampleon reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLF0910H9LS750P Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 June 2019 © Ampleon Netherlands B.V. 2019. All rights reserved. 12 of 14 BLF0910H9LS750P Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’s standard warranty and Ampleon’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. 13. Contact information For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales BLF0910H9LS750P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 June 2019 © Ampleon Netherlands B.V. 2019. All rights reserved. 13 of 14 BLF0910H9LS750P Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.4.1 7.5 7.6 7.6.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Impedance information . . . . . . . . . . . . . . . . . . . 3 Test circuit broadband . . . . . . . . . . . . . . . . . . . 4 Graphical data broadband circuit . . . . . . . . . . . 5 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test circuit narrowband. . . . . . . . . . . . . . . . . . . 8 Graphical data narrowband circuit . . . . . . . . . . 9 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Handling information. . . . . . . . . . . . . . . . . . . . 11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon Netherlands B.V. 2019. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 18 June 2019 Document identifier: BLF0910H9LS750P