BLF189XRB; BLF189XRBS
Power LDMOS transistor
Rev. 1 — 3 October 2017
Product data sheet
1. Product profile
1.1 General description
A 1900 W extremely rugged LDMOS power transistor for industrial pulsed applications in
the HF to 150 MHz band.
Table 1.
Application information
VDS
PL
Gp
D
Test signal
f
(MHz)
(V)
(W)
(dB)
(%)
pulsed RF
108
50
1900
26
72.5
1.2 Features and benefits
Easy power control
Integrated dual sided ESD protection enables class C operation and complete switch
off of the transistor
Excellent ruggedness VSWR > 65 : 1
High efficiency
Excellent thermal stability
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
BLF189XRB; BLF189XRBS
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BLF189XRB (SOT539A)
1
drain1
2
drain2
3
gate1
4
gate2
5
1
1
2
5
3
3
4
5
4
[1]
source
2
sym117
BLF189XRBS (SOT539B)
1
drain1
2
drain2
3
gate1
4
gate2
5
1
1
2
5
3
3
4
5
4
[1]
source
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number Package
Name Description
BLF189XRB
-
BLF189XRBS -
Version
flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A
earless flanged balanced ceramic package; 4 leads
SOT539B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS
Min
Max
Unit
drain-source voltage
-
135
V
VGS
gate-source voltage
6
+11
V
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
225
C
[1]
BLF189XRB_BLF189XRBS
Product data sheet
Conditions
[1]
Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF
calculator.
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Rev. 1 — 3 October 2017
© Ampleon Netherlands B.V. 2017. All rights reserved.
2 of 14
BLF189XRB; BLF189XRBS
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Tj = 150 C
[1][2]
Rth(j-c)
thermal resistance from junction to case
Zth(j-c)
transient thermal impedance from junction Tj = 150 C; tp = 100 s;
to case
= 20 %
[1]
Typ
Unit
0.12
K/W
0.036 K/W
Tj is the junction temperature.
[2]
Rth(j-c) is measured under RF conditions.
[3]
See Figure 1.
amp00487
0.16
Zth(j-c)
(K/W)
0.12
0.08
(7)
(6)
(5)
(4)
(3)
(2)
(1)
0.04
0
10-7
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
(1) = 1 %
(2) = 2 %
(3) = 5 %
(4) = 10 %
(5) = 20 %
(6) = 50 %
(7) = 100 % (DC)
Fig 1.
Transient thermal impedance from junction to case as a function of pulse
duration
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C; per section unless otherwise specified.
BLF189XRB_BLF189XRBS
Product data sheet
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown voltage
VGS = 0 V; ID = 7.8 mA
135
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 780 mA
1.33
1.9
2.33
V
VGSq
gate-source quiescent voltage
VDS = 50 V; ID = 100 mA
1.10
1.67
2.10
V
IDSS
drain leakage current
VGS = 0 V; VDS = 50 V
-
-
2.8
A
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BLF189XRB; BLF189XRBS
Power LDMOS transistor
Table 6.
DC characteristics …continued
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
-
106
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
280
nA
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 27.3 A
-
0.06
-
Table 7.
AC characteristics
Tj = 25 C; per section unless otherwise specified.
Conditions
Min Typ
Max Unit
Crs
Symbol Parameter
feedback capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
-
6.7
-
pF
Ciss
input capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
-
750
-
pF
Coss
output capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
-
284
-
pF
Table 8.
RF characteristics
Test signal: pulsed RF; tp = 100 s; = 20 %; f = 108 MHz; RF performance at VDS = 50 V;
IDq = 200 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL = 1900 W
24.5
26
-
dB
RLin
input return loss
PL = 1900 W
-
9
-
dB
D
drain efficiency
PL = 1900 W
69
72.5
-
%
amp00447
1000
Coss
(pF)
800
600
400
200
0
0
10
20
30
40
50
VDS (V)
60
VGS = 0 V; f = 1 MHz.
Fig 2.
BLF189XRB_BLF189XRBS
Product data sheet
Output capacitance as a function of drain-source voltage; typical values per
section
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Rev. 1 — 3 October 2017
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4 of 14
BLF189XRB; BLF189XRBS
Power LDMOS transistor
7. Test information
7.1 Ruggedness in class-AB operation
The BLF189XRB and BLF189XRBS are capable of withstanding a load mismatch
corresponding to VSWR > 65 : 1 through all phases under the following conditions:
VDS = 50 V; IDq = 200 mA; PL = 1900 W pulsed; f = 108 MHz.
7.2 Impedance information
drain 1
gate 1
Zi
ZL
gate 2
drain 2
001aan207
Fig 3.
Definition of transistor impedance
Table 9.
Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL = 1900 W.
BLF189XRB_BLF189XRBS
Product data sheet
f
Zi
ZL
(MHz)
()
()
108
1.7 j6.0
2.0 + j0.4
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Rev. 1 — 3 October 2017
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5 of 14
BLF189XRB; BLF189XRBS
Power LDMOS transistor
7.3 Test circuit
200.3 mm
-
R1
C6
C8
C25
R3
+
L3
L1
C10
R5
C12 C16
90 mm
C1
C2
C4
C14
C5
C15
C22
C20
C21 C23
C19
C18
C3
C13 C17
C11
R6
R2
C7
C9
C24
L2
+
L4
-
C26
R4
amp00448
19 mm
36 mm
Printed-Circuit Board (PCB): RF-35; r = 3.5 F/m; thickness = 0.765 mm; thickness copper plating = 35 m.
See Table 10 for a list of components.
Fig 4.
Component layout for class-AB production test circuit
Table 10. List of components
For test circuit see Figure 4.
BLF189XRB_BLF189XRBS
Product data sheet
Component
Description
Value
C1
multilayer ceramic chip capacitor
470 pF
[1]
C2, C3
multilayer ceramic chip capacitor
68 pF
[1]
C4
multilayer ceramic chip capacitor
43 pF
[1]
C5
multilayer ceramic chip capacitor
240 pF
[1]
C6, C7
multilayer ceramic chip capacitor
4.7 F, 50 V
C8, C9
multilayer ceramic chip capacitor
920 pF
[1]
C10, C11
multilayer ceramic chip capacitor
920 pF
[1]
C12, C13
multilayer ceramic chip capacitor
160 pF
[1]
C14, C15
multilayer ceramic chip capacitor
120 pF
[1]
C16, C17
multilayer ceramic chip capacitor
4.7 F, 100 V
C18, C19
multilayer ceramic chip capacitor
51 pF
[1]
C20, C21
multilayer ceramic chip capacitor
56 pF
[1]
C22, C23
multilayer ceramic chip capacitor
100 pF
[1]
C24
multilayer ceramic chip capacitor
470 pF
[1]
C25, C26
electrolytic capacitor
2200 F, 64 V
L1, L2
air inductor
3 turns, D = 4 mm
1mm copper wire
L3, L4
air inductor
5 turns, D = 4 mm
1mm copper wire
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Rev. 1 — 3 October 2017
Remarks
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6 of 14
BLF189XRB; BLF189XRBS
Power LDMOS transistor
Table 10. List of components …continued
For test circuit see Figure 4.
Component
Description
Value
Remarks
R1, R2
resistor
4.7 k
SMD 1206
R3, R4
resistor
0.01
FC4L110R010FER
R5, R6
resistor
4.7 , 0.6 w
SMD 1206
T1, T2
semi rigid coax
50 , 160 mm
EZ 141-AL-TP/M17
[1]
American Technical Ceramics type 100B or capacitor of same quality
7.4 Graphical data
amp00449
29
Gp
(dB)
80
ηD
(%)
ηD
amp00450
68
PL
(dBm)
Ideal PL
27
60
66
(2)
25
40
64
(1)
PL
Gp
23
20
21
0
400
800
1200
1600
2000
PL (W)
62
0
2400
60
33
VDS = 50 V; IDq = 200 mA; f = 108 MHz; tp = 100 s;
= 20 %.
34
35
36
37
38
39
Pi (dBm)
40
VDS = 50 V; IDq = 200 mA; f = 108 MHz; tp = 100 s;
= 20 %.
(1) PL(1dB) = 62.7 dBm (1870 W)
(2) PL(3dB) = 63.3 dBm (2132 W)
Fig 5.
Power gain and drain efficiency as function of
output power; typical values
BLF189XRB_BLF189XRBS
Product data sheet
Fig 6.
Output power as a function of input power;
typical values
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Rev. 1 — 3 October 2017
© Ampleon Netherlands B.V. 2017. All rights reserved.
7 of 14
BLF189XRB; BLF189XRBS
Power LDMOS transistor
amp00451
30
Gp
(dB)
amp00452
80
ηD
(%)
28
(1)
(2)
(3)
(4)
60
26
(4)
(3)
(2)
(1)
40
24
20
22
20
0
0
400
800
1200
1600
2000
PL (W)
2400
0
VDS = 50 V; f = 108 MHz; tp = 100 s; = 20 %.
400
800
(1) IDq = 50 mA
(2) IDq = 200 mA
(2) IDq = 200 mA
(3) IDq = 800 mA
(3) IDq = 800 mA
(4) IDq = 2000 mA
(4) IDq = 2000 mA
Power gain as a function of output power;
typical values
Fig 8.
amp00453
30
Gp
(dB)
2000
PL (W)
2400
Drain efficiency as a function of output power;
typical values
amp00454
80
(6)
ηD
(%)
28
64
26
48
24
1600
VDS = 50 V; f = 108 MHz; tp = 100 s; = 20 %.
(1) IDq = 50 mA
Fig 7.
1200
(5)
(3)
(4)
(2)
(1)
32
(1)
(2)
(3)
(4)
22
16
(5)
(6)
20
0
0
400
800
1200
1600
2000
PL (W)
2400
IDq = 200 mA; f = 108 MHz; tp = 100 s; = 20 %.
0
400
(1) VDS = 50 V
(2) VDS = 45 V
(2) VDS = 45 V
(3) VDS = 40 V
(3) VDS = 40 V
(4) VDS = 35 V
(4) VDS = 35 V
(5) VDS = 30 V
(5) VDS = 30 V
(6) VDS = 25 V
(6) VDS = 25 V
Power gain as a function of output power;
typical values
BLF189XRB_BLF189XRBS
Product data sheet
1200
1600
2000
PL (W)
2400
IDq = 200 mA; f = 108 MHz; tp = 100 s; = 20 %.
(1) VDS = 50 V
Fig 9.
800
Fig 10. Drain efficiency as a function of output power;
typical values
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Rev. 1 — 3 October 2017
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BLF189XRB; BLF189XRBS
Power LDMOS transistor
8. Package outline
Flanged balanced ceramic package; 2 mounting holes; 4 leads
SOT539A
D
A
F
D1
U1
B
q
C
w2 M C M
H1
1
c
2
E1
p
H U2
5
L
3
A
E
w1 M A M B M
4
w3 M
b
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
mm
4.7
4.2
inches
b
c
D
D1
e
E
E1
11.81 0.18 31.55 31.52
9.50
13.72
11.56 0.10 30.94 30.96
9.30
9.53
9.27
F
H
H1
L
1.75 17.12 25.53 3.48
1.50 16.10 25.27 2.97
p
Q
q
3.30
3.05
2.26
2.01
35.56
U1
U2
w1
41.28 10.29
0.25
41.02 10.03
w2
w3
0.51
0.25
0.185 0.465 0.007 1.242 1.241
0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089
1.625 0.405
1.400
0.010 0.020 0.010
0.540
0.165 0.455 0.004 1.218 1.219
0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079
1.615 0.395
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
10-02-02
12-05-02
SOT539A
Fig 11. Package outline SOT539A
BLF189XRB_BLF189XRBS
Product data sheet
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Rev. 1 — 3 October 2017
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9 of 14
BLF189XRB; BLF189XRBS
Power LDMOS transistor
Earless flanged balanced ceramic package; 4 leads
SOT539B
D
A
F
5
D1
D
U1
H1
w2
1
c
D
2
E1
U2
H
E
L
3
4
w3
b
Q
e
0
5
10 mm
scale
Dimensions
Unit(1)
A
b
4.7
11.81
w2
w3
0.25
0.25
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375
0.069 0.674 1.005 0.137 0.089 1.275 0.405
0.54
inches nom
0.01
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365
0.059 0.634 0.995 0.117 0.079 1.265 0.395
0.01
mm
max
nom
min
c
D
D1
0.18 31.55 31.52
E
E1
9.5
9.53
e
F
H
H1
L
Q
U1
U2
1.75 17.12 25.53 3.48
2.26 32.39 10.29
1.50 16.10 25.27 2.97
2.01 32.13 10.03
13.72
4.2
11.56
0.10 30.94 30.96
9.3
9.27
Note
1. millimeter dimensions are derived from the original inch dimensions.
Outline
version
References
IEC
JEDEC
JEITA
sot539b_po
European
projection
Issue date
12-05-02
13-05-24
SOT539B
Fig 12. Package outline SOT539B
BLF189XRB_BLF189XRBS
Product data sheet
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Rev. 1 — 3 October 2017
© Ampleon Netherlands B.V. 2017. All rights reserved.
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BLF189XRB; BLF189XRBS
Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 11.
ESD sensitivity
ESD model
Class
Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002
C2A [1]
Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001
2 [2]
[1]
CDM classification C2A is granted to any part that passes after exposure to an ESD pulse of 500 V, but fails
after exposure to an ESD pulse of 750 V.
[2]
HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V, but fails
after exposure to an ESD pulse of 4000 V.
10. Abbreviations
Table 12.
Abbreviations
Acronym
Description
CW
Continuous Wave
ESD
ElectroStatic Discharge
HF
High Frequency
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
MTF
Median Time to Failure
SMD
Surface Mounted Device
VSWR
Voltage Standing Wave Ratio
11. Revision history
Table 13.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF189XRB_BLF189XRBS v.1
20171003
Product data sheet
-
-
BLF189XRB_BLF189XRBS
Product data sheet
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Rev. 1 — 3 October 2017
© Ampleon Netherlands B.V. 2017. All rights reserved.
11 of 14
BLF189XRB; BLF189XRBS
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
Definition
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLF189XRB_BLF189XRBS
Product data sheet
Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 3 October 2017
© Ampleon Netherlands B.V. 2017. All rights reserved.
12 of 14
BLF189XRB; BLF189XRBS
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’s warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’s specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’s standard warranty and Ampleon’s product
specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
13. Contact information
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
BLF189XRB_BLF189XRBS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 3 October 2017
© Ampleon Netherlands B.V. 2017. All rights reserved.
13 of 14
BLF189XRB; BLF189XRBS
Power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5
Ruggedness in class-AB operation . . . . . . . . . 5
Impedance information . . . . . . . . . . . . . . . . . . . 5
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Handling information. . . . . . . . . . . . . . . . . . . . 11
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon Netherlands B.V. 2017.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 3 October 2017
Document identifier: BLF189XRB_BLF189XRBS