BLF245B,112

BLF245B VHF push-pull power MOS transistor Rev. 7 — 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.ampleon.com http://www.semiconductors.philips.com use http://www.ampleon.com (Internet) sales.addresses@www.semiconductors.philips.com use http://www.ampleon.com/sales The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © Ampleon B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office (details via http://www.ampleon.com/sales). Thank you for your cooperation and understanding, Ampleon Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF245B PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. 1 andbook, halfpage 4 Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. 2 Top view s g1 5 DESCRIPTION The transistor is encapsulated in a 4-lead, SOT279A balanced flange package, with a ceramic cap. The mounting flange provides the common source connection for the transistors. d2 g2 d1 3 MSB018 MBB157 Fig.1 Simplified outline and symbol. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. PINNING - SOT279A PIN WARNING DESCRIPTION 1 drain 1 Product and environmental safety - toxic materials 2 gate 1 3 gate 2 4 drain 2 5 source This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a push-pull common source test circuit. MODE OF OPERATION CW, class-B 2003 Aug 04 f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) 175 28 30 >14 >55 2 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor section unless otherwise specified VDS drain-source voltage − 65 V ±VGS gate-source voltage − 20 V ID DC drain current − 4.5 A Ptot total power dissipation Tmb ≤ 25 °C; total device; both sections equally loaded − 75 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-mb thermal resistance from junction to mounting base total device; both sections equally loaded 2.3 K/W Rth mb-h thermal resistance from mounting base to heatsink total device; both sections equally loaded 0.3 K/W MRA922 102 handbook, halfpage MRA929 120 handbook, halfpage ID (A) Ptot (W) 10 80 (2) (1) (1) (2) 40 1 10−1 1 10 VDS (V) 0 102 0 (1) Current in this area may be limited by RDSon. 80 120 Th (oC) (1) Continuous operation. (2) Short-time operation during mismatch. Total device; both sections equally loaded. (2) Tmb = 25 °C. Total device; both sections equally loaded. Fig.2 DC SOAR. 2003 Aug 04 40 Fig.3 Power derating curves. 3 160 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ID = 5 mA; VGS = 0 65 − − V Per transistor section V(BR)DSS drain-source breakdown voltage IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 1 mA IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 − − 1 µA VGSth gate-source threshold voltage ID = 5 mA; VDS = 10 V 2 − 4.5 V gfs forward transconductance ID = 0.75 A; VDS = 10 V 600 850 − mS RDSon drain-source on-state resistance ID = 0.75 A; VGS = 10 V − 0.8 1.5 Ω IDSX on-state drain current VGS = 10 V; VDS = 10 V − 5 − A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 60 − pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 40 − pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 4.5 − pF VGS group indicator LIMITS (V) GROUP LIMITS (V) GROUP MIN. MAX. MIN. MAX. A 2.0 2.1 B 2.1 2.2 O 3.3 3.4 P 3.4 3.5 C 2.2 2.3 Q 3.5 3.6 D E 2.3 2.4 R 3.6 3.7 2.4 2.5 S 3.7 3.8 F 2.5 2.6 T 3.8 3.9 G 2.6 2.7 U 3.9 4.0 H 2.7 2.8 V 4.0 4.1 J 2.8 2.9 W 4.1 4.2 K 2.9 3.0 X 4.2 4.3 L 3.0 3.1 Y 4.3 4.4 M 3.1 3.2 Z 4.4 4.5 N 3.2 3.3 2003 Aug 04 4 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B MGP180 MGP181 6 2 handbook, halfpage handbook, halfpage T.C. (mV/K) Tj = 25 °C ID (A) 0 125 °C 4 −2 −4 2 −6 −8 0 1 102 10 ID (mA) 0 103 4 8 12 VGS (V) 16 VDS = 10 V. Fig.4 VDS = 10 V. Temperature coefficient of gate-source voltage as a function of drain current; typical values per section. Fig.5 MGP182 2 Drain current as a function of gate-source voltage; typical values per section. MGP183 160 handbook, halfpage handbook, halfpage C (pF) RDSon (Ω) 120 1 80 Cis Cos 40 0 0 40 80 120 Tj ( C) 0 160 0 ID = 0.75 A; VGS = 10 V. Fig.6 20 30 VDS (V) 40 VGS = 0; f = 1 MHz. Drain-source on-state resistance as a function of junction temperature; typical values per section. 2003 Aug 04 10 Fig.7 5 Input and output capacitance as functions of drain-source voltage; typical values per section. Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B MGP184 20 handbook, halfpage Crs (pF) 10 0 0 10 20 30 VDS (V) 40 VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage; typical values per section. APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C; Rth mb-h = 0.3 K/W; unless otherwise specified. RF performance in a push-pull, common source, class-B test circuit. MODE OF OPERATION CW, class-B f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) 175 28 2 × 25 30 >14 typ. 18 >55 typ. 65 Ruggedness in class-B operation The BLF245B is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases, under the following conditions: VDS = 28 V, f = 175 MHz at rated output power. 2003 Aug 04 6 Philips Semiconductors Product specification VHF push-pull power MOS transistor MGP185 20 Gp handbook, halfpage Gp BLF245B PL (W) ηD (dB) 15 MGP186 40 handbook, halfpage 80 30 60 ηD 10 40 5 20 0 20 10 0 0 0 10 20 30 PL (W) 0 40 0.5 1.0 1.5 PIN (W) 2.0 Class-B operation; VDS = 28 V; IDQ = 2 × 25 mA; ZL = 8.8 + j12.7 Ω; f = 175 MHz. Class-B operation; VDS = 28 V; IDQ = 2 × 25 mA; ZL = 8.8 + j12.7 Ω; f = 175 MHz. Fig.9 Fig.10 Load power as a function of input power; typical values. Power gain and efficiency as functions of output power; typical values. 2003 Aug 04 7 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... C11 C12 C13 C7 L10 C8 C14 R7 C15 R1 D.U.T. L1 8 50 Ω input L4 C1 C3 L2 C4 L6 C5 L8 C6 L14 L16 L12 C27 C21 C22 C23 C24 L20 L21 50 Ω output C26 C2 L3 C25 L18 Philips Semiconductors +VG +VD VHF push-pull power MOS transistor R5 handbook, full pagewidth 2003 Aug 04 R3 L5 L7 L13 L9 L17 L19 L22 L15 C16 R2 C17 R8 C10 L11 C9 C18 C19 R4 MGP187 +VD Fig.11 Test circuit for class-B operation. Product specification f = 175 MHz. R6 BLF245B C20 +VG Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B List of components (see Fig.11) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1,C2 multilayer ceramic chip capacitor; note 1 270 pF C3 multilayer ceramic chip capacitor; note 1 24 pF C4 film dielectric trimmer 4 to 60 pF C5, C25, C26 multilayer ceramic chip capacitor; note 1 91 pF C6, C22, C24 film dielectric trimmer 5 to 60 pF 2222 809 08003 C7, C9, C12, C14, C17, C19 multilayer ceramic chip capacitor 100 nF 2222 852 47104 C8, C10 multilayer ceramic chip capacitor; note 1 680 pF C11, C20 multilayer ceramic chip capacitor 10 nF C13, C18 electrolytic capacitor 10 µF, 63 V C15, C16 multilayer ceramic chip capacitor; note 1 100 pF C21, C27 multilayer ceramic chip capacitor; note 1 75 pF C23 multilayer ceramic chip capacitor; note 1 36 pF L1, L3, L20, L22 stripline; note 2 55 Ω length 111 mm width 2.5 mm L2, L21 semi-rigid cable 50 Ω length 111 mm ext. dia. 2.2 mm L4, L5 stripline; note 2 49.5 Ω length 28 mm width 3 mm L6, L7 stripline; note 2 49.5 Ω length 22.5 mm width 3 mm L8, L9 stripline; note 2 49.5 Ω length 4.5 mm width 3 mm L10, L11 grade 3B Ferroxcube RF choke L12, L13 stripline; note 2 49.5 Ω length 21 mm width 3 mm L14, L15 4 turns enamelled 1 mm copper wire 70 nH length 9 mm int. dia. 6 mm leads 2 × 5 mm L16, L17 stripline; note 2 49.5 Ω length 30 mm width 3 mm L18, L19 stripline; note 2 49.5 Ω length 26 mm width 3 mm R1, R2 0.4 W metal film resistor 10 Ω R3, R4 10 turns potentiometer 50 Ω R5, R6 0.4 W metal film resistor 205 kΩ R7, R8 0.4 W metal film resistor 10 Ω 2222 809 08002 2222 852 47103 4312 020 36642 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with epoxy glass dielectric (εr = 4.5), thickness 1⁄16 inch. The other side of the board is fully metallized and used as a ground plane. The ground planes on each side of the board are connected together by means of copper straps and hollow rivets. 2003 Aug 04 9 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B 200 mm handbook, full pagewidth rivet rivet copper strap copper strap copper strap copper strap rivet rivet copper strap 110 mm copper strap copper strap copper strap rivet rivet MBA377 +VG +VD andbook, full pagewidth C11 L10 L1 + L2 C15 C14 C1 C3 C5 L4 L5 C2 C4 L20 C13 R7 L14 C7 C8 R1 L6 C27 L7 C6 R2 C12 L16 C25 C23 L18 L19 C24 C26 L12 C21 L8 L9 L13 C22 L17 C10 C9 L15 C16 C17 R8 L11 L3 L21 + L22 C18 C19 +VG C20 +VD The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as a ground. Earth connections are made by means of copper straps and hollow rivets for a direct contact between the upper and lower sheets. Fig.12 Component layout for 175 MHz test circuit. 2003 Aug 04 10 MBA378 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B MGP188 10 MGP189 30 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) 5 ri 20 xi 10 0 XL −5 −10 RL 0 0 100 200 300 f (MHz) 400 0 100 200 300 f (MHz) 400 Class-B operation; VDS = 28 V; IDQ = 2 × 25 mA; RGS = 10 Ω; PL = 30 W (total device). Class-B operation; VDS = 28 V; IDQ = 2 × 25 mA; RGS = 10 Ω; PL = 30 W (total device). Fig.13 Input impedance as a function of frequency (series components); typical values per section. Fig.14 Load impedance as a function of frequency (series components); typical values per section. MGP190 25 Gp handbook, halfpage (dB) 20 15 handbook, halfpage 10 5 Zi ZL MBA379 0 0 100 200 300 f (MHz) 400 Class-B operation; VDS = 28 V; IDQ = 2 × 25 mA; RGS = 10 Ω; PL = 30 W (total device). Fig.16 Power gain as a function of frequency; typical values per section. Fig.15 Definition of MOS impedance. 2003 Aug 04 11 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT279A D A F 5 D1 U1 B q C w2 M C M H1 1 c 4 E1 H U2 E A 2 w1 M A M B M p 3 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 e F H H1 p Q q U1 U2 w1 w2 w3 mm 6.84 6.01 1.65 1.40 0.15 0.10 9.25 9.04 9.27 9.02 5.94 5.74 5.97 5.72 3.05 3.05 2.54 12.96 11.94 4.96 4.19 3.48 3.23 4.34 4.04 18.42 24.90 24.64 5.97 5.72 0.25 0.51 0.25 inches 0.269 0.065 0.006 0.364 0.365 0.234 0.235 0.120 0.510 0.195 0.137 0.171 0.980 0.235 0.725 0.010 0.020 0.010 0.120 0.237 0.055 0.004 0.356 0.355 0.226 0.225 0.100 0.470 0.165 0.127 0.159 0.970 0.225 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT279A 2003 Aug 04 EUROPEAN PROJECTION ISSUE DATE 99-03-29 12 Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Aug 04 13 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/06/pp14 Date of release: 2003 Aug 04 Document order number: 9397 750 11596