BLF6G27LS-100,112

BLF6G27-100; BLF6G27LS-100 WiMAX power LDMOS transistor Rev. 02 — 8 July 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp ηD ACPR885k ACPR1980k ACPR5M ACPR10M (MHz) (V) (W) (dB) (%) (dBc) (dBc) (dBc) (dBc) 2500 to 2700 28 14 16.5 23 - - −40 −59 - - −41 −60 - - BLF6G27-100 1-carrier W-CDMA [1] [2] 2500 to 2700 28 14 17 23 −50 1-carrier W-CDMA [1] 2500 to 2700 28 14 17 23 - 23 −50 1-carrier N-CDMA [3] −65 [3] BLF6G27LS-100 1-carrier N-CDMA [2] 2500 to 2700 28 14 17 [3] −65 [3] [1] Signal is a one carrier, TM1 W-CDMA signal with 64 DPCH and 100 % clipping. PAR is 9.65 dB at 0.01 % probability on CCDF. [2] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. [3] Measured within 30 kHz bandwidth. 1.2 Features and benefits „ Typical 1-carrier W-CDMA performance (single carrier W-CDMA TM1 with 64 DPCH and 100 % clipping; PAR = 9.65 dB at 0.01 % probability on the CCDF; channel bandwidth is 3.84 MHz) at a frequency of 2500 MHz, 2600 MHz and 2700 MHz, a supply voltage of 28 V and an IDq of 900 mA: ‹ Average output power = 14 W ‹ Power gain = 17 dB ‹ Drain efficiency = 23 % ‹ ACPR5M = −41 dBc „ Typical 1-carrier N-CDMA performance (single carrier IS-95 with pilot, paging, sync and 6 traffic channels [Walsh codes 8 to 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz, 2600 MHz and 2700 MHz, a supply voltage of 28 V and an IDq of 900 mA: ‹ Average output power = 14 W ‹ Power gain = 17 dB ‹ Drain efficiency = 23 % ‹ ACPR885k = −50 dBc (within 30 kHz bandwidth) BLF6G27-100; BLF6G27LS-100 NXP Semiconductors WiMAX power LDMOS transistor „ „ „ „ „ „ „ Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2500 MHz to 2700 MHz) Internally matched for ease of use 1.3 Applications „ RF power amplifiers for base stations and multicarrier applications in the 2500 MHz to 2700 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G27-100 (SOT502A) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 BLF6G27LS-100 (SOT502B) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number BLF6G27-100 Package Name Description Version - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A earless flanged LDMOST ceramic package; 2 leads SOT502B BLF6G27LS-100 - BLF6G27-100_BLF6G27LS-100 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 02 — 8 July 2010 © NXP B.V. 2010. All rights reserved. 2 of 14 BLF6G27-100; BLF6G27LS-100 NXP Semiconductors WiMAX power LDMOS transistor 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage −0.5 +13 V ID drain current - 29 A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C 5. Thermal characteristics Table 5. Symbol Thermal characteristics Parameter Conditions Rth(j-case) thermal resistance from junction to case Type Tcase = 80 °C; PL = 100 W BLF6G27-100 BLF6G27LS-100 Typ Unit 0.68 K/W 0.5 K/W 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.5 mA 65 - - V 2 2.4 V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 150 mA 1.4 IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 5 μA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 22.3 27 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 450 nA gfs forward transconductance VDS = 10 V; ID = 5.25 A - 10.5 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 5.25 A - 0.1 0.16 Ω Crs feedback capacitance VGS = 0 V; VDS = 28 V; f = 1 MHz - 2.4 - pF BLF6G27-100_BLF6G27LS-100 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 02 — 8 July 2010 © NXP B.V. 2010. All rights reserved. 3 of 14 BLF6G27-100; BLF6G27LS-100 NXP Semiconductors WiMAX power LDMOS transistor 7. Application information Table 7. Application information Mode of operation: 1-carrier W-CDMA; single carrier W-CDMA TM1 with 64 DPCH and 100 % clipping; PAR = 9.65 dB at 0.01 % probability on the CCDF; carrier channel bandwidth is 3.84 MHz; f1 = 2500 MHz; f2 = 2600 MHz, f3 = 2700 MHz; RF performance at VDS = 28 V; IDq = 900 mA; Tcase = 25 °C; unless otherwise specified, in a class-AB production circuit. Symbol Parameter Conditions Gp power gain PL(AV) = 14 W dB BLF6G27LS-100 15 17 - dB - −10 −6 dB 20 23 - % BLF6G27-100 - −40 −36 dBc BLF6G27LS-100 - −41 −37 dBc BLF6G27-100 - −59 −56 dBc BLF6G27LS-100 - −60 −57 dBc PL(AV) = 14 W ηD drain efficiency PL(AV) = 14 W ACPR10M [1] adjacent channel power ratio (10 MHz) Max Unit 14.8 16.5 - input return loss adjacent channel power ratio (5 MHz) Typ BLF6G27-100 RLin ACPR5M Min PL(AV) = 14 W PL(AV) = 14 W [1] [1] ACPR measured in 3.84 MHz channel bandwidth at ±5 MHz and ±10 MHz. 7.1 Ruggedness in class-AB operation The BLF6G27-100 and BLF6G27LS-100 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 900 mA; PL = 100 W (CW); f = 2500 MHz. BLF6G27-100_BLF6G27LS-100 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 02 — 8 July 2010 © NXP B.V. 2010. All rights reserved. 4 of 14 BLF6G27-100; BLF6G27LS-100 NXP Semiconductors WiMAX power LDMOS transistor 7.2 Single carrier W-CDMA performance 001aal779 19 Gp (dB) ηD (%) (2) (3) (1) 18 50 001aal780 −20 ACPR (dBc) 40 −30 30 −40 20 −50 ACPR5M 10 −60 ACPR10M (3) (2) (1) Gp 17 (1) (2) 16 (3) ηD 15 14 1 0 102 10 −70 1 PL(AV) (W) 102 10 PL(AV) (W) VDS = 28 V; IDq = 900 mA; single carrier W-CDMA TM1 with 64 DPCH and 100 % clipping; PAR = 9.65 dB at 0.01 % probability; channel bandwidth = 3.84 MHz. VDS = 28 V; IDq = 900 mA; single carrier W-CDMA TM1 with 64 DPCH and 100 % clipping; PAR = 9.65 dB at 0.01 % probability; channel bandwidth = 3.84 MHz. (1) f = 2500 MHz (1) f = 2500 MHz (2) f = 2600 MHz (2) f = 2600 MHz (3) f = 2700 MHz (3) f = 2700 MHz Fig 1. (3) (2) (1) Power gain and drain efficiency as a function of average output power; typical values Fig 2. ACPR at 5 MHz and at 10 MHz as a function of average output power; typical values BLF6G27-100_BLF6G27LS-100 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 02 — 8 July 2010 © NXP B.V. 2010. All rights reserved. 5 of 14 BLF6G27-100; BLF6G27LS-100 NXP Semiconductors WiMAX power LDMOS transistor 7.3 Single carrier W-CDMA broadband performance at 14 W average power 001aal781 19 30 ηD (%) Gp (dB) 28 18 Gp 001aal782 −35 ACPR (dBc) ACPR5M −45 26 17 ηD 16 24 −55 22 15 ACPR10M 14 2500 2550 2600 20 2700 2650 −65 2500 2550 f (MHz) 2650 2700 f (MHz) VDS = 28 V; IDq = 900 mA; single carrier W-CDMA TM1 with 64 DPCH and 100 % clipping; PAR = 9.65 dB at 0.01 % probability; channel bandwidth = 3.84 MHz. VDS = 28 V; IDq = 900 mA; single carrier W-CDMA TM1 with 64 DPCH and 100 % clipping; PAR = 9.65 dB at 0.01 % probability; channel bandwidth = 3.84 MHz. Fig 3. 2600 Power gain and drain efficiency as a function of frequency; typical values Fig 4. ACPR at 5 MHz and at 10 MHz as a function of frequency; typical values BLF6G27-100_BLF6G27LS-100 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 02 — 8 July 2010 © NXP B.V. 2010. All rights reserved. 6 of 14 BLF6G27-100; BLF6G27LS-100 NXP Semiconductors WiMAX power LDMOS transistor 7.4 IS-95 performance 001aal783 19 Gp (dB) ηD (%) (1) (2) (3) 18 50 001aal784 −30 ACPR (dBc) 40 −40 30 −50 20 −60 10 −70 (2) (1) (3) Gp 17 (1) 16 (1) (2) (3) ACPR855k (2) (3) ηD 15 14 1 0 102 10 −80 ACPR1980k 1 PL(AV) (W) PL(AV) (W) VDS = 28 V; IDq = 900 mA; IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13); PAR = 9.7 dB at 0.01 % probability on the CCDF; channel bandwidth = 1.2288 MHz. VDS = 28 V; IDq = 900 mA; IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13); PAR = 9.7 dB at 0.01 % probability on the CCDF; channel bandwidth = 1.2288 MHz. (1) f = 2500 MHz (1) f = 2500 MHz (2) f = 2600 MHz (2) f = 2600 MHz (3) f = 2700 MHz (3) f = 2700 MHz Fig 5. 102 10 Power gain and drain efficiency as a function of average output power; typical values Fig 6. ACPR at 885 kHz and at 1980 kHz as a function of average output power; typical values BLF6G27-100_BLF6G27LS-100 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 02 — 8 July 2010 © NXP B.V. 2010. All rights reserved. 7 of 14 BLF6G27-100; BLF6G27LS-100 NXP Semiconductors WiMAX power LDMOS transistor 7.5 IS-95 broadband performance at 14 W average power 001aal785 19 30 ηD (%) Gp (dB) 28 18 Gp 001aal786 −40 ACPR (dBc) ACPR855k −50 26 17 ηD 24 16 −60 22 15 ACPR1980k 14 2500 2550 2600 20 2700 2650 −70 2500 2550 f (MHz) 2650 2700 f (MHz) VDS = 28 V; IDq = 900 mA; IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13); PAR = 9.7 dB at 0.01 % probability on the CCDF; channel bandwidth = 1.2288 MHz. VDS = 28 V; IDq = 900 mA; IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13); PAR = 9.7 dB at 0.01 % probability on the CCDF; channel bandwidth = 1.2288 MHz. Fig 7. 2600 Power gain and drain efficiency as a function of frequency; typical values Fig 8. ACPR at 885 kHz and at 1980 kHz as a function of frequency; typical values BLF6G27-100_BLF6G27LS-100 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 02 — 8 July 2010 © NXP B.V. 2010. All rights reserved. 8 of 14 BLF6G27-100; BLF6G27LS-100 NXP Semiconductors WiMAX power LDMOS transistor 8. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 9. EUROPEAN PROJECTION Package outline SOT502A BLF6G27-100_BLF6G27LS-100 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 02 — 8 July 2010 © NXP B.V. 2010. All rights reserved. 9 of 14 BLF6G27-100; BLF6G27LS-100 NXP Semiconductors WiMAX power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION D D1 E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 REFERENCES IEC JEDEC JEITA 0.390 0.010 0.380 EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 SOT502B Fig 10. Package outline SOT502B BLF6G27-100_BLF6G27LS-100 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 02 — 8 July 2010 © NXP B.V. 2010. All rights reserved. 10 of 14 BLF6G27-100; BLF6G27LS-100 NXP Semiconductors WiMAX power LDMOS transistor 9. Abbreviations Table 8. Abbreviations Acronym Description CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel ESD ElectroStatic Discharge FCH Frame Control Header FFT Fast Fourier Transform IBW Instantaneous BandWidth IS-95 Interim Standard 95 LDMOS Laterally Diffused Metal-Oxide Semiconductor N-CDMA Narrowband Code Division Multiple Access PAR Peak-to-Average power Ratio PUSC Partial Usage of SubChannels RF Radio Frequency TM1 Test Model 1 VSWR Voltage Standing-Wave Ratio W-CDMA Wideband Code Division Multiple Access WCS Wireless Communications Service WiMAX Worldwide interoperability for Microwave Access 10. Revision history Table 9. Revision history Document ID Release date BLF6G27-100_BLF6G27LS-100 v.2 20100708 Modifications: • • • BLF6G27-100_BLF6G27LS-100_1 Data sheet status Change notice Supersedes Product data sheet - BLF6G27-100_ BLF6G27LS-100_1 Data sheet status change to Product data sheet. Table 1 on page 1: A distinction has been made between BLF6G27-100 and BLF6G27LS-100 Table 7 on page 4: A distinction has been made between BLF6G27-100 and BLF6G27LS-100 20100503 Preliminary data sheet - BLF6G27-100_BLF6G27LS-100 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 02 — 8 July 2010 - © NXP B.V. 2010. All rights reserved. 11 of 14 BLF6G27-100; BLF6G27LS-100 NXP Semiconductors WiMAX power LDMOS transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 11.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. BLF6G27-100_BLF6G27LS-100 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 02 — 8 July 2010 © NXP B.V. 2010. All rights reserved. 12 of 14 NXP Semiconductors BLF6G27-100; BLF6G27LS-100 WiMAX power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF6G27-100_BLF6G27LS-100 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 02 — 8 July 2010 © NXP B.V. 2010. All rights reserved. 13 of 14 NXP Semiconductors BLF6G27-100; BLF6G27LS-100 WiMAX power LDMOS transistor 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Ruggedness in class-AB operation . . . . . . . . . 4 Single carrier W-CDMA performance . . . . . . . . 5 Single carrier W-CDMA broadband performance at 14 W average power . . . . . . . . 6 IS-95 performance . . . . . . . . . . . . . . . . . . . . . . 7 IS-95 broadband performance at 14 W average power . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 8 July 2010 Document identifier: BLF6G27-100_BLF6G27LS-100