BLF6G27LS-75,118

BLF6G27-75; BLF6G27LS-75 WiMAX power LDMOS transistor Rev. 01 — 22 October 2009 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] f VDS PL(AV) PL(M) Gp ηD ACPR885k ACPR1980k (MHz) (V) (W) (W) (dB) (%) (dBc) (dBc) 2500 to 2700 28 9 75 17 23 −50[2] −60[2] [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. [2] Measured within 30 kHz bandwidth. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Typical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and 2700 MHz, a supply voltage of 28 V and an IDq of 600 mA: u Average output power = 9 W u Power gain = 17 dB u Drain efficiency = 23 % u ACPR885 = −50.0 dBc in 30 kHz bandwidth n Easy power control n Integrated ESD protection n Excellent ruggedness n High efficiency n Excellent thermal stability n Designed for broadband operation (2500 MHz to 2700 MHz) n Internally matched for ease of use BLF6G27-75; BLF6G27LS-75 NXP Semiconductors WiMAX power LDMOS transistor n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications n RF power amplifiers for base stations and multicarrier applications in the 2500 MHz to 2700 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G27-75 (SOT502A) 1 drain 2 gate 3 source 1 1 [1] 3 2 2 3 sym112 BLF6G27LS-75 (SOT502B) 1 drain 2 gate 3 source 1 1 [1] 3 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF6G27-75 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A BLF6G27LS-75 - earless flanged LDMOST ceramic package; 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS gate-source voltage −0.5 +13 V ID drain current - 18 A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C BLF6G27-75_6G27LS-75_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 22 October 2009 2 of 14 BLF6G27-75; BLF6G27LS-75 NXP Semiconductors WiMAX power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Type Rth(j-case) thermal resistance from Tcase = 80 °C; BLF6G27-75 junction to case PL = 60 W (CW) BLF6G27LS-75 Typ Unit 0.85 K/W 0.75 K/W 6. Characteristics Table 6. Characteristics Tj = 25 °C per section; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.5 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 100 mA 1.4 2 2.4 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 3 µA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 14.9 18 - A IGSS gate leakage current VGS = +11 V; VDS = 0 V - - 300 nA gfs forward transconductance VDS = 10 V; ID = 5 A - 7 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 3.5 A - 0.14 0.25 Ω Crs feedback capacitance VGS = 0 V; VDS = 28 V; f = 1 MHz - 1.6 - pF 7. Application information Table 7. Application information Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth is 1.2288 MHz; f1 = 2500 MHz; f2 = 2600 MHz; f3 = 2700 MHz; RF performance at VDS = 28 V; IDq = 600 mA; Tcase = 25 °C; unless otherwise specified, in a class-AB production circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 9 W 15 17 - dB RLin input return loss PL(AV) = 9 W - −10 ηD drain efficiency PL(AV) = 9 W 19.0 23 ACPR885k adjacent channel power ratio (885 kHz) PL(AV) = 9 W [1] - ACPR1980k adjacent channel power ratio (1980 kHz) PL(AV) = 9 W [1] PL(M) peak output power [2] dB % −50 −45 dBc - −60 −55 dBc 70 75 - W [1] Measured within 30 kHz bandwidth. [2] Measured at 2.7 GHz and 3 dB compression of the CCDF at 0.01 % probability. BLF6G27-75_6G27LS-75_1 Product data sheet - © NXP B.V. 2009. All rights reserved. Rev. 01 — 22 October 2009 3 of 14 BLF6G27-75; BLF6G27LS-75 NXP Semiconductors WiMAX power LDMOS transistor 7.1 Ruggedness in class-AB operation The BLF6G27-75 and BLF6G27LS-75 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 600 mA; PL = 65 W (CW); f = 2500 MHz. 7.2 One-tone CW 001aak974 20 001aak975 70 ηD (%) 60 Gp (dB) 18 16 (2) (1) (3) 50 (1) (3) (2) 40 30 14 20 12 10 0 10 0 20 40 60 80 0 20 40 PL (W) VDS = 28 V; IDq = 600 mA. VDS = 28 V; IDq = 600 mA. (1) f = 2500 MHz (2) f = 2600 MHz (2) f = 2600 MHz (3) f = 2700 MHz (3) f = 2700 MHz Power gain as a function of load power; typical values Fig 2. Drain efficiency as a function of load power; typical values BLF6G27-75_6G27LS-75_1 Product data sheet 80 PL (W) (1) f = 2500 MHz Fig 1. 60 © NXP B.V. 2009. All rights reserved. Rev. 01 — 22 October 2009 4 of 14 BLF6G27-75; BLF6G27LS-75 NXP Semiconductors WiMAX power LDMOS transistor 7.3 Single carrier IS-95 001aak976 19 001aak977 50 ηD (%) Gp (dB) 18 40 (2) (1) (3) (1) (3) (2) 17 30 16 20 15 10 14 0 0 10 20 30 40 50 0 10 20 30 40 PL (W) VDS = 28 V; IDq = 600 mA. VDS = 28 V; IDq = 600 mA. (1) f = 2500 MHz (1) f = 2500 MHz (2) f = 2600 MHz (2) f = 2600 MHz (3) f = 2700 MHz (3) f = 2700 MHz Fig 3. Power gain as a function of load power; typical values 001aak978 −20 ACPR885k (dBc) Fig 4. Drain efficiency as a function of load power; typical values 001aak979 −40 ACPR1980k (dBc) −30 −50 −40 (1) (2) (3) −60 (2) (1) (3) −50 −70 −60 −70 −80 0 10 20 30 40 50 0 10 20 PL (W) VDS = 28 V; IDq = 600 mA. 40 50 VDS = 28 V; IDq = 600 mA. (1) f = 2500 MHz (2) f = 2600 MHz (2) f = 2600 MHz (3) f = 2700 MHz (3) f = 2700 MHz Adjacent channel power ratio (885 kHz) as a function of load power; typical values Fig 6. Adjacent channel power ratio (1980 kHz) as a function of load power; typical values BLF6G27-75_6G27LS-75_1 Product data sheet 30 PL (W) (1) f = 2500 MHz Fig 5. 50 PL (W) © NXP B.V. 2009. All rights reserved. Rev. 01 — 22 October 2009 5 of 14 BLF6G27-75; BLF6G27LS-75 NXP Semiconductors WiMAX power LDMOS transistor 7.4 Single carrier W-CDMA 001aak980 19 Gp (dB) 001aak981 60 ηD (%) 18 40 (1) (3) (2) 17 (2) (3) (1) 16 20 15 14 0 0 10 20 30 40 50 0 10 20 30 40 PL (W) VDS = 28 V; IDq = 600 mA. VDS = 28 V; IDq = 600 mA. (1) f = 2500 MHz (1) f = 2500 MHz (2) f = 2600 MHz (2) f = 2600 MHz (3) f = 2700 MHz (3) f = 2700 MHz Fig 7. Power gain as a function of load power; typical values 001aak982 −10 Fig 8. ACPR10M (dBc) −20 −30 −30 −40 (2) (1) (3) Drain efficiency as a function of load power; typical values 001aak983 −20 ACPR5M (dBc) −40 (1) (2) (3) −50 −50 −60 −60 −70 0 10 20 30 40 50 0 10 20 PL (W) VDS = 28 V; IDq = 600 mA. 40 50 VDS = 28 V; IDq = 600 mA. (1) f = 2500 MHz (2) f = 2600 MHz (2) f = 2600 MHz (3) f = 2700 MHz (3) f = 2700 MHz Adjacent channel power ratio (5 MHz) as a function of load power; typical values Fig 10. Adjacent channel power ratio (10 MHz) as a function of load power; typical values BLF6G27-75_6G27LS-75_1 Product data sheet 30 PL (W) (1) f = 2500 MHz Fig 9. 50 PL (W) © NXP B.V. 2009. All rights reserved. Rev. 01 — 22 October 2009 6 of 14 BLF6G27-75; BLF6G27LS-75 NXP Semiconductors WiMAX power LDMOS transistor 7.5 2-carrier W-CDMA 001aak984 19 Gp (dB) 001aak985 60 ηD (%) 18 40 (1) (3) (2) 17 (2) (3) (1) 16 20 15 14 0 0 10 20 30 40 50 0 10 20 30 40 PL (W) VDS = 28 V; IDq = 600 mA; carrier spacing = 10 MHz. VDS = 28 V; IDq = 600 mA; carrier spacing = 10 MHz. (1) f = 2500 MHz (1) f = 2500 MHz (2) f = 2600 MHz (2) f = 2600 MHz (3) f = 2700 MHz (3) f = 2700 MHz Fig 11. Power gain as a function of load power; typical values 001aak986 −10 Fig 12. Drain efficiency as a function of load power; typical values ACPR10M (dBc) −20 −20 −30 −30 (3) (1) (2) 001aak987 −10 ACPR5M (dBc) −40 50 PL (W) (3) (2) (1) −40 −50 −50 −60 −60 0 10 20 30 40 50 0 10 PL (W) VDS = 28 V; IDq = 600 mA; carrier spacing = 10 MHz. 40 50 VDS = 28 V; IDq = 600 mA; carrier spacing = 10 MHz. (1) f = 2500 MHz (2) f = 2600 MHz (2) f = 2600 MHz (3) f = 2700 MHz (3) f = 2700 MHz Fig 14. Adjacent channel power ratio (10 MHz) as a function of load power; typical values BLF6G27-75_6G27LS-75_1 Product data sheet 30 PL (W) (1) f = 2500 MHz Fig 13. Adjacent channel power ratio (5 MHz) as a function of load power; typical values 20 © NXP B.V. 2009. All rights reserved. Rev. 01 — 22 October 2009 7 of 14 BLF6G27-75; BLF6G27LS-75 NXP Semiconductors WiMAX power LDMOS transistor 8. Test information 8.1 Impedance information Table 8. Typical impedance Typical values per section unless otherwise specified. f ZS ZL GHz Ω Ω 2.5 5.3 − j7.7 6.0 − j3.3 2.6 8.7 − j8.7 4.7 − j2.6 2.7 12.2 + j0.4 3.9 − j2.4 drain ZL gate ZS 001aaf059 Fig 15. Definition of transistor impedance 8.2 Test circuit C5 R1 C6 B1 C7 C2 C3 R2 C4 C1 BLF6G27-75 OUTPUT REV2 NXP BLF6G27-75 INPUT REV2 NXP 001aak988 Printed-Circuit Board (PCB) material: Taconic RF35 with εr = 3.5 and thickness = 0.762 mm. See Table 9 for list of components. Fig 16. Component layout BLF6G27-75_6G27LS-75_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 22 October 2009 8 of 14 NXP Semiconductors BLF6G27-75; BLF6G27LS-75 WiMAX power LDMOS transistor Table 9. List of components See Figure 16 for component layout. Component Description Value B1 ferrite bead - C1, C2, C3 multilayer ceramic chip capacitor 13 pF [1] C4 multilayer ceramic chip capacitor 10 pF [2] C5, C6 multilayer ceramic chip capacitor 4.7 µF C7 electrolytic capacitor 220 µF; 63 V R1, R2 SMD resistor 10 Ω [1] American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. BLF6G27-75_6G27LS-75_1 Product data sheet Remarks TDK SMD 1206 © NXP B.V. 2009. All rights reserved. Rev. 01 — 22 October 2009 9 of 14 BLF6G27-75; BLF6G27LS-75 NXP Semiconductors WiMAX power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 17. Package outline SOT502A BLF6G27-75_6G27LS-75_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 22 October 2009 10 of 14 BLF6G27-75; BLF6G27LS-75 NXP Semiconductors WiMAX power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA 0.390 0.010 0.380 EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 SOT502B Fig 18. Package outline SOT502B BLF6G27-75_6G27LS-75_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 22 October 2009 11 of 14 BLF6G27-75; BLF6G27LS-75 NXP Semiconductors WiMAX power LDMOS transistor 10. Abbreviations Table 10. Abbreviations Acronym Description CCDF Complementary Cumulative Distribution Function CW Continuous Wave IS-95 Interim Standard 95 LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor N-CDMA Narrowband Code Division Multiple Access PAR Peak-to-Average power Ratio RF Radio Frequency SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio W-CDMA Wideband Code Division Multiple Access WiMAX Worldwide Interoperability for Microwave Access 11. Revision history Table 11. Revision history Document ID Release date BLF6G27-75_6G27LS-75_1 20091022 Data sheet status Change notice Supersedes Product data sheet - - BLF6G27-75_6G27LS-75_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 22 October 2009 12 of 14 NXP Semiconductors BLF6G27-75; BLF6G27LS-75 WiMAX power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF6G27-75_6G27LS-75_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 22 October 2009 13 of 14 NXP Semiconductors BLF6G27-75; BLF6G27LS-75 WiMAX power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 8 8.1 8.2 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Single carrier IS-95 . . . . . . . . . . . . . . . . . . . . . . 5 Single carrier W-CDMA . . . . . . . . . . . . . . . . . . 6 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Impedance information . . . . . . . . . . . . . . . . . . . 8 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 22 October 2009 Document identifier: BLF6G27-75_6G27LS-75_1