BLF7G21LS-160,112

BLF7G21LS-160 Power LDMOS transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2050 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 1930 to 1990 1080 28 45 18 34 30 [1] 1-carrier W-CDMA 1930 to 1990 1080 28 50 18 36 34 [2] Mode of operation [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. [2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.2 Features and benefits          Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1800 MHz to 2050 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifiers for base stations and multi carrier applications in the 1800 MHz to 2050 MHz frequency range BLF7G21LS-160 Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 drain 3 gate 4 gate 5 Simplified outline 1 Graphic symbol 2 1 5 3 5 [1] source 4 3 4 2 [1] aaa-001924 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package BLF7G21LS-160 Name Description Version - SOT1121B earless flanged LDMOST ceramic package; 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS gate-source voltage 0.5 +13 V Tstg storage temperature 65 +150 C Tj junction temperature - 200 C 5. Thermal characteristics Table 5. BLF7G21LS-160#2 Product data sheet Thermal characteristics Symbol Parameter Conditions Typ Rth(j-c) thermal resistance from junction to case Tcase = 80 C; PL = 100 W 0.41 K/W All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 Unit © Ampleon The Netherlands B.V. 2015. All rights reserved. 2 of 14 BLF7G21LS-160 Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 C. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage Min Typ Max Unit VGS = 0 V; ID = 1.8 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 180 mA 1.5 1.9 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 34 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 280 nA gfs forward transconductance VDS = 10 V; ID = 9 A - 13 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 6.3 A - 0.08 -  7. Test information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test model 1; 64 PDPCH; f1 = 1932.5 MHz; f2 = 1937.5 MHz; f3 = 1982.5 MHz; f4 = 1987.5 MHz; RF performance at VDS = 28 V; IDq = 1080 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 45 W 17.0 18.0 - dB RLin input return loss PL(AV) = 45 W - 15 8 dB D drain efficiency PL(AV) = 45 W 31 34 - % ACPR5M adjacent channel power ratio (5 MHz) PL(AV) = 45 W 30 25 dBc 7.1 Ruggedness in class-AB operation The BLF7G21LS-160 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1080 mA; PL = 160 W (CW); f = 1805 MHz. BLF7G21LS-160#2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 3 of 14 BLF7G21LS-160 Power LDMOS transistor 7.2 1-Tone CW aaa-002633 22 60 Gp (dB) ηD (%) 20 50 18 40 (6) (5) (4) (3) (2) (1) 16 14 30 20 12 10 10 0 25 50 75 100 125 150 175 PL (W) 0 200 VDS = 28 V; IDq = 1080 mA. (1) Gp at f = 1930 MHz (2) Gp at f = 1960 MHz (3) Gp at f = 1990 MHz (4) D at f = 1930 MHz (5) D at f = 1960 MHz (6) D at f = 1990 MHz Fig 1. BLF7G21LS-160#2 Product data sheet Power gain and drain efficiency as function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 4 of 14 BLF7G21LS-160 Power LDMOS transistor 7.3 1-Carrier W-CDMA aaa-002634 22 60 Gp (dB) ηD (%) 20 50 18 (6) (5) (4) (3) (2) (1) 16 14 12 10 0 20 40 60 80 PL (W) aaa-002635 -10 ACPR (dBc) -20 40 -30 30 -40 20 -50 10 -60 0 100 (3) (2) (1) (6) (5) (4) -70 0 VDS = 28 V; IDq = 1080 mA. 20 40 60 100 VDS = 28 V; IDq = 1080 mA. (1) Gp at f = 1930 MHz (1) ACPR5M at f = 1930 MHz (2) Gp at f = 1960 MHz (2) ACPR5M at f = 1960 MHz (3) Gp at f = 1990 MHz (3) ACPR5M at f = 1990 MHz (4) D at f = 1930 MHz (4) ACPR10M at f = 1930 MHz (5) D at f = 1960 MHz (5) ACPR10M at f = 1960 MHz (6) D at f = 1990 MHz (6) ACPR10M at f = 1990 MHz Fig 2. 80 PL (W) Power gain and drain efficiency as function of load power; typical values Fig 3. Adjacent channel power ratio (5 MHz) and Adjacent channel power ratio (10 MHz) as a function of load power; typical values aaa-002636 8 PAR (dB) 6 (1) (2) (3) 4 2 0 0 20 40 60 80 PL (W) 100 VDS = 28 V; IDq = 1080 mA. (1) f = 1930 MHz (2) f = 1960 MHz (3) f = 1990 MHz Fig 4. Peak-to-average ratio as a function of load power; typical values BLF7G21LS-160#2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 5 of 14 BLF7G21LS-160 Power LDMOS transistor 7.4 2-Carrier W-CDMA at 5 MHz carrier spacing aaa-002637 22 60 Gp (dB) ηD (%) 20 50 18 aaa-002638 -10 ACPR (dBc) -20 (3) (1) (2) (6) (4) (5) 40 -30 (6) (5) (4) (3) (2) (1) 16 14 30 -40 20 12 -50 10 10 0 20 40 60 80 PL (W) 0 100 -60 0 VDS = 28 V; IDq = 1080 mA. 12.5 25 37.5 50 (1) ACPR5M at f = 1930 MHz (2) Gp at f = 1960 MHz (2) ACPR5M at f = 1960 MHz (3) Gp at f = 1990 MHz (3) ACPR5M at f = 1990 MHz (4) D at f = 1930 MHz (4) ACPR10M at f = 1930 MHz (5) D at f = 1960 MHz (5) ACPR10M at f = 1960 MHz (6) D at f = 1990 MHz (6) ACPR10M at f = 1990 MHz Power gain and drain efficiency as function of load power; typical values BLF7G21LS-160#2 Product data sheet 75 87.5 PL (W) 100 VDS = 28 V; IDq = 1080 mA. (1) Gp at f = 1930 MHz Fig 5. 62.5 Fig 6. Adjacent channel power ratio (5 MHz) and adjacent channel power ratio (10 MHz) as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 6 of 14 BLF7G21LS-160 Power LDMOS transistor 7.5 2-Carrier W-CDMA at 10 MHz carrier spacing aaa-002639 22 60 Gp (dB) ηD (dB) 20 50 18 (6) (5) (4) (3) (2) (1) 16 14 12 10 0 20 40 60 80 PL (W) aaa-002640 0 ACPR (dBc) -10 40 -20 30 -30 20 -40 10 -50 0 100 (6) (5) (4) (2) (1) (3) -60 0 VDS = 28 V; IDq = 1080 mA. 20 40 60 (1) ACPR5M at f = 1930 MHz (2) Gp at f = 1960 MHz (2) ACPR5M at f = 1960 MHz (3) Gp at f = 1990 MHz (3) ACPR5M at f = 1990 MHz (4) D at f = 1930 MHz (4) ACPR10M at f = 1930 MHz (5) D at f = 1960 MHz (5) ACPR10M at f = 1960 MHz (6) D at f = 1990 MHz (6) ACPR10M at f = 1990 MHz Power gain and drain efficiency as function of load power; typical values BLF7G21LS-160#2 Product data sheet 100 VDS = 28 V; IDq = 1080 mA. (1) Gp at f = 1930 MHz Fig 7. 80 PL (W) Fig 8. Adjacent channel power ratio (5 MHz) and adjacent channel power ratio (10 MHz) as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 7 of 14 BLF7G21LS-160 Power LDMOS transistor 7.6 Test circuit R1 C1 C6 C11 C9 C3 C15 C13 C5 C8 C4 C12 C2 R2 C14 C10 aaa-002770 Printed-Circuit Board (PCB): Taconic RF35; r = 3.5; thickness = 0.76 mm; thickness copper plating = 35 m. See Table 8 for a list of components. Fig 9. Component layout for class-AB production test circuit Table 8. List of components For test circuit see Figure 9. BLF7G21LS-160#2 Product data sheet Component Description Value C1, C2, C5, C9, C10 multilayer ceramic chip capacitor 68 pF [1] C3, C4, C11, C12 multilayer ceramic chip capacitor 820 pF [2] C6, C13, C14 multilayer ceramic chip capacitor 10 F [3] C8 multilayer ceramic chip capacitor 10 pF [1] C15 electrolytic capacitor 470 F; 63 V R1, R2 SMD resistor 12  [1] American Technical Ceramics type 800B or capacitor of same quality. [2] American Technical Ceramics type 100A or capacitor of same quality. [3] TDK or capacitor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 Remarks Philips 1206 © Ampleon The Netherlands B.V. 2015. All rights reserved. 8 of 14 BLF7G21LS-160 Power LDMOS transistor 7.7 Impedance information Table 9. Typical impedance Typical values valid for both section in parallel; IDq = 1800 mA; VDS = 28 V, unless otherwise specified. f ZS ZL MHz   1750 0.99  j4.09 2.32  j2.35 1805 1.12  j4.39 2.20  j2.20 1840 1.23  j4.58 2.08  j2.14 1880 1.31  j4.74 1.94  j2.12 1930 1.49  j5.01 1.76  j2.15 1960 1.61  j5.19 1.66  j2.20 1990 1.75  j5.36 1.56  j2.26 2020 1.91  j5.54 1.48  j2.34 2050 2.13  j5.75 1.4  j2.42 gate drain ZS ZL 001aal831 Fig 10. Definition of transistor impedance BLF7G21LS-160#2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 9 of 14 BLF7G21LS-160 Power LDMOS transistor 8. Package outline Earless flanged ceramic package; 4 leads SOT1121B D A F 5 D1 D U1 w2 H1 H c D 2 1 U2 E1 E 4 3 b y w3 e Q 0 5 10 mm scale Dimensions Unit(1) mm A max 4.75 nom min 3.45 b 3.94 c D D1 e 0.18 20.02 19.96 E E1 F H H1 Q U1 U2 w2 w3 9.53 9.53 1.14 19.94 12.83 1.70 20.70 9.91 0.51 0.25 0.25 8.89 3.68 0.08 19.61 19.66 9.27 9.27 0.89 18.92 12.57 1.45 20.45 9.65 max 0.187 0.155 0.007 0.788 0.786 0.375 0.375 0.045 0.785 0.505 0.067 0.815 0.39 0.02 0.01 0.35 inches nom min 0.136 0.145 0.003 0.772 0.774 0.365 0.365 0.035 0.745 0.495 0.057 0.805 0.38 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version y References IEC JEDEC JEITA 0.01 sot1121b_po European projection Issue date 09-12-14 12-06-07 SOT1121B Fig 11. Package outline SOT1121B BLF7G21LS-160#2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 10 of 14 BLF7G21LS-160 Power LDMOS transistor 9. Abbreviations Table 10. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor PAR Peak-to-Average Ratio PDPCH transmission Power of the Dedicated Physical CHannel RF Radio Frequency SMD Surface Mounted Device VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 10. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF7G21LS-160#2 20150901 Product data sheet - BLF7G21LS-160 v.1 Modifications: BLF7G21LS-160 v.1 BLF7G21LS-160#2 Product data sheet • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. 20120420 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 - © Ampleon The Netherlands B.V. 2015. All rights reserved. 11 of 14 BLF7G21LS-160 Power LDMOS transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Ampleon and its customer, unless Ampleon and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Ampleon product is deemed to offer functions and qualities beyond those described in the Product data sheet. 11.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Ampleon does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Ampleon takes no responsibility for the content in this document if provided by an information source outside of Ampleon. In no event shall Ampleon be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Ampleon’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Ampleon. Right to make changes — Ampleon reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLF7G21LS-160#2 Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 12 of 14 BLF7G21LS-160 Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’ standard warranty and Ampleon’ product specifications. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12. Contact information For more information, please visit: http://www.ampleon.com BLF7G21LS-160#2 Product data sheet For sales office addresses, please visit: http://www.ampleon.com/sales All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 13 of 14 BLF7G21LS-160 Power LDMOS transistor 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 7.6 7.7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5 2-Carrier W-CDMA at 5 MHz carrier spacing . . 6 2-Carrier W-CDMA at 10 MHz carrier spacing . 7 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Impedance information . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLF7G21LS-160#2