BLF888E; BLF888ES
UHF power LDMOS transistor
Rev. 2 — 30 August 2016
Product data sheet
1. Product profile
1.1 General description
A 750 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter
applications which operates at 150 W DVB-T average power. The excellent ruggedness of
this device makes it ideal for digital and analog transmitter applications.
Table 1.
Application information
RF performance at VDS = 50 V in an asymmetrical Doherty application.
Test signal
DVB-T (8k OFDM)
[1]
f
PL(AV)
Gp
D
IMDshldr
(MHz)
(W)
(dB)
(%)
(dBc)
(dB)
470 to 608
150
17
52
38
8 [1]
600 to 700
150
17
50
38
8 [1]
650 to 790
150
15
49
38
8 [1]
PAR
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
Designed for asymmetric Doherty operation
Very high efficiency enabling air cooled high power transmitters
Integrated ESD protection
Excellent ruggedness
High power gain
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Broadcast transmitter applications in the UHF band
Digital broadcasting
BLF888E; BLF888ES
UHF power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BLF888E (SOT539A)
1
drain1 (peak)
2
drain2 (main)
3
gate1 (peak)
4
gate2 (main)
5
1
1
2
5
3
3
4
5
4
[1]
source
2
sym117
BLF888ES (SOT539B)
1
drain1 (peak)
2
drain2 (main)
3
gate1 (peak)
4
gate2 (main)
5
source
1
1
2
5
3
3
4
5
4
[1]
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number Package
Name Description
Version
BLF888E
-
flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A
BLF888ES
-
earless flanged balanced ceramic package; 4 leads
SOT539B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS(amp)main
Min
Max
Unit
main amplifier drain-source voltage
-
104
V
VDS(amp)peak
peak amplifier drain-source voltage
-
120
V
VGS(amp)main
main amplifier gate-source voltage
0.5
+11
V
VGS(amp)peak
peak amplifier gate-source voltage
6
+11
V
Tstg
storage temperature
65
+150
C
-
225
C
Tj
[1]
BLF888E_BLF888ES
Product data sheet
junction temperature
Conditions
[1]
Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF
calculator.
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Rev. 2 — 30 August 2016
© Ampleon Netherlands B.V. 2016. All rights reserved.
2 of 13
BLF888E; BLF888ES
UHF power LDMOS transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Rth(j-c)
Conditions
Typ Unit
thermal resistance from junction to Tcase = 90 C; VDS = 50 V;
case
IDS = 3 A (main); IDS = 0 A (peak)
Tcase = 90 C; VDS = 50 V;
PL = 150 W; PAR = 8 dB
[1]
0.29 K/W
[2]
0.19 K/W
[1]
Measured under DC test conditions, with peak section off.
[2]
Measured in an ultra-wide Doherty application, using DVB-T (8k OFDM) signal, PAR (of output signal) at
0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
104
-
-
V
V
Main device
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.4 mA
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 240 mA
1.25
1.75
2.25
IDSS
drain leakage current
VGS = 0 V; VDS = 50 V
-
-
2.8
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
-
38
-
A
IGSS
gate leakage current
VGS = 10 V; VDS = 0 V
-
-
280
nA
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 8.5 A
-
120
-
m
125
-
-
V
Peak device
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 3.6 mA
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 360 mA
1.33
1.83
2.33
V
IDSS
drain leakage current
VGS = 0 V; VDS = 50 V
-
-
2.8
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
-
57
-
A
IGSS
gate leakage current
VGS = 10 V; VDS = 0 V
-
-
280
nA
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 12.6 A
-
90
-
m
Table 7.
AC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Max Unit
Main device
BLF888E_BLF888ES
Product data sheet
Ciss
input capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz -
210
-
pF
Coss
output capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz -
67
-
pF
Crss
reverse transfer capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz -
1.35
-
pF
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Rev. 2 — 30 August 2016
© Ampleon Netherlands B.V. 2016. All rights reserved.
3 of 13
BLF888E; BLF888ES
UHF power LDMOS transistor
Table 7.
AC characteristics …continued
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Max Unit
Peak device
Ciss
input capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz -
315
-
pF
Coss
output capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz -
105
-
pF
Crss
reverse transfer capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz -
1.5
-
pF
Table 8.
RF characteristics
RF characteristics in Ampleon production test circuit, Tcase = 25 C; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ Max Unit
DVB-T (8k OFDM), Doherty operation
VDS
drain-source voltage
-
50
IDq
quiescent drain current
peak section: VGS = 1.3 V
below VGS(th) (peak)
-
600 -
-
mA
V
PL(AV)
average output power
f = 550 MHz
-
150 -
W
Gp
power gain
f = 550 MHz
15.8 17
-
dB
D
drain efficiency
f = 550 MHz
48
52
-
%
PAR
peak-to-average ratio
f = 550 MHz
7.2
7.8
-
dB
7. Test information
7.1 Ruggedness in Doherty operation
The BLF888E and BLF888ES are capable of withstanding a load mismatch corresponding
to VSWR 40 : 1 through all phases under the following conditions: VDS = 50 V;
f = 550 MHz at rated load power.
BLF888E_BLF888ES
Product data sheet
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Rev. 2 — 30 August 2016
© Ampleon Netherlands B.V. 2016. All rights reserved.
4 of 13
BLF888E; BLF888ES
UHF power LDMOS transistor
7.2 Test circuit
95 mm
95 mm
L3
C13
C20
C11
L1
R10
L5
C22
C24
R12
R6
C3 C4
C1
R1
80 mm
C5 C6
R2
C2
R3 R5
C7
R4
C8 C9 C10
C26
R7
L2
C12
C14
L6
C21
L4
R11
C23
C25
amp00021
Printed-Circuit Board (PCB): Rogers 3006; r = 6.5 F/m; height = 0.635 mm; Cu (top/bottom metalization); thickness copper
plating = 29.6 m; Rogers 3010: r = 10 F/m; height = 0.254 mm
See Table 9 for a list of components.
Fig 1.
Component layout for production RF test circuit
Table 9.
List of components
For test circuit see Figure 1.
Component
Description
C1, C2
multilayer ceramic chip capacitor 51 pF
[1]
ATC 100B
multilayer ceramic chip capacitor 11 pF
[1]
ATC 100B
C4
multilayer ceramic chip capacitor 13 pF
[1]
ATC 100B
C5, C6
multilayer ceramic chip capacitor 24 pF
[1]
ATC 100B
C7
multilayer ceramic chip capacitor 33 pF
[1]
ATC 100B
multilayer ceramic chip capacitor 51 pF
[2]
ATC 100A
C9
multilayer ceramic chip capacitor 12 pF
[1]
ATC 100B
C10
multilayer ceramic chip capacitor 20 pF
[1]
ATC 100B
C11, C12
multilayer ceramic chip capacitor 43 pF
[1]
ATC 100B
C13, C14
multilayer ceramic chip capacitor 4.7 F
C20, C21
electrolytic capacitor
[1]
ATC 100B
C22, C23
multilayer ceramic chip capacitor 4.7 F, 100 V
C25, C25
electrolytic capacitor
C26
multilayer ceramic chip capacitor 47 pF
[1]
ATC 100B
L1, L2
inductor
10 nH
L3, L4
inductor
0.5 turn, D = 2 mm,
d = 1mm
L5, L6
inductor
1 turn, D = 5 mm,
d = 1mm
R1
chip resistor
90
C3
C8
BLF888E_BLF888ES
Product data sheet
Value
100 pF
470 F, 63 V
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 30 August 2016
Remarks
Coilcraft
© Ampleon Netherlands B.V. 2016. All rights reserved.
5 of 13
BLF888E; BLF888ES
UHF power LDMOS transistor
Table 9.
List of components …continued
For test circuit see Figure 1.
Component
Description
Value
R2
chip resistor
265
R3, R4
chip resistor
360
R5
chip resistor
15
R6
chip resistor
75
R7
chip resistor
5
R10, R11
wire resistor
1
R12
shunt resistor
0.01
[1]
American Technical Ceramics type 100B or capacitor of same quality
[2]
American Technical Ceramics type 100A or capacitor of same quality
Remarks
7.3 Graphical data
7.3.1 DVB-T in production test circuit
amp00079
11
PAR
(dB)
amp00080
60
ηD
(%)
50
10
40
9
30
20
8
10
7
0
0
25
50
75
100
125
150 175
PL (W)
200
0
VDS = 50 V; IDq = 600 mA; measured in a Doherty
production test circuit at 550 MHz.
Fig 2.
Peak-to-average power ratio as a function of
output power; typical values
BLF888E_BLF888ES
Product data sheet
25
50
75
100
125
150 175
PL (W)
200
VDS = 50 V; IDq = 600 mA; measured in a Doherty
production test circuit at 550 MHz.
Fig 3.
Drain efficiency as a function of output power;
typical values
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Rev. 2 — 30 August 2016
© Ampleon Netherlands B.V. 2016. All rights reserved.
6 of 13
BLF888E; BLF888ES
UHF power LDMOS transistor
amp00081
18
Gp
(dB)
17.5
17
16.5
16
0
25
50
75
100
125
150 175
PL (W)
200
VDS = 50 V; IDq = 600 mA; measured in a Doherty production test circuit at 550 MHz.
Fig 4.
Power gain as a function of output power; typical values
BLF888E_BLF888ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 30 August 2016
© Ampleon Netherlands B.V. 2016. All rights reserved.
7 of 13
BLF888E; BLF888ES
UHF power LDMOS transistor
8. Package outline
Flanged balanced ceramic package; 2 mounting holes; 4 leads
SOT539A
D
A
F
D1
U1
B
q
C
w2 M C M
H1
1
c
2
E1
p
H U2
5
L
3
A
E
w1 M A M B M
4
w3 M
b
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
mm
4.7
4.2
inches
b
c
D
D1
e
E
E1
11.81 0.18 31.55 31.52
9.50
13.72
11.56 0.10 30.94 30.96
9.30
9.53
9.27
F
H
H1
L
1.75 17.12 25.53 3.48
1.50 16.10 25.27 2.97
p
Q
q
3.30
3.05
2.26
2.01
35.56
U1
U2
w1
41.28 10.29
0.25
41.02 10.03
w2
w3
0.51
0.25
0.185 0.465 0.007 1.242 1.241
0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089
1.625 0.405
1.400
0.010 0.020 0.010
0.540
0.165 0.455 0.004 1.218 1.219
0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079
1.615 0.395
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
10-02-02
12-05-02
SOT539A
Fig 5.
EUROPEAN
PROJECTION
Package outline SOT539A
BLF888E_BLF888ES
Product data sheet
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Rev. 2 — 30 August 2016
© Ampleon Netherlands B.V. 2016. All rights reserved.
8 of 13
BLF888E; BLF888ES
UHF power LDMOS transistor
Earless flanged balanced ceramic package; 4 leads
SOT539B
D
A
F
5
D1
D
U1
H1
w2
1
c
D
2
E1
U2
H
E
L
3
4
w3
b
Q
e
0
5
10 mm
scale
Dimensions
Unit(1)
A
b
4.7
11.81
w2
w3
0.25
0.25
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375
0.069 0.674 1.005 0.137 0.089 1.275 0.405
0.54
inches nom
0.01
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365
0.059 0.634 0.995 0.117 0.079 1.265 0.395
0.01
mm
max
nom
min
c
D
D1
0.18 31.55 31.52
E
E1
9.5
9.53
e
F
H
H1
L
Q
U1
U2
1.75 17.12 25.53 3.48
2.26 32.39 10.29
1.50 16.10 25.27 2.97
2.01 32.13 10.03
13.72
4.2
11.56
0.10 30.94 30.96
9.3
9.27
Note
1. millimeter dimensions are derived from the original inch dimensions.
Outline
version
References
IEC
JEDEC
JEITA
Issue date
12-05-02
13-05-24
SOT539B
Fig 6.
sot539b_po
European
projection
Package outline SOT539B
BLF888E_BLF888ES
Product data sheet
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Rev. 2 — 30 August 2016
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BLF888E; BLF888ES
UHF power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 10.
Abbreviations
Acronym
Description
CCDF
Complementary Cumulative Distribution Function
DVB-T
Digital Video Broadcast - Terrestrial
ESD
ElectroStatic Discharge
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
MTF
Median Time to Failure
OFDM
Orthogonal Frequency Division Multiplexing
PAR
Peak-to-Average Ratio
UHF
Ultra High Frequency
VSWR
Voltage Standing Wave Ratio
11. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF888E_BLF888ES v.2
20160830
Product data sheet
-
BLF888E_BLF888ES v.1
Modifications:
BLF888E_BLF888ES v.1
BLF888E_BLF888ES
Product data sheet
•
•
•
•
•
•
•
•
Section 1.1 on page 1: section updated
Table 1 on page 1: table updated
Section 1.2 on page 1: text second list item updated
Table 5 on page 3: table updated
Table 6 on page 3: table updated
Table 8 on page 4: table updated
Section 7.1 on page 4: section updated
Section 7.3 on page 6: section added
20160317
Objective data sheet
-
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 30 August 2016
-
© Ampleon Netherlands B.V. 2016. All rights reserved.
10 of 13
BLF888E; BLF888ES
UHF power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLF888E_BLF888ES
Product data sheet
Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 30 August 2016
© Ampleon Netherlands B.V. 2016. All rights reserved.
11 of 13
BLF888E; BLF888ES
UHF power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Licenses
ICs with DVB-T or DVB-T2 functionality
Use of this product in any manner that complies with the DVB-T or the
DVB-T2 standard may require licenses under applicable patents of the
DVB-T respectively the DVB-T2 patent portfolio, which license is available
from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under
applicable patents of other parties.
12.5 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
13. Contact information
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
BLF888E_BLF888ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 30 August 2016
© Ampleon Netherlands B.V. 2016. All rights reserved.
12 of 13
BLF888E; BLF888ES
UHF power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.3.1
8
9
10
11
12
12.1
12.2
12.3
12.4
12.5
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4
Ruggedness in Doherty operation . . . . . . . . . . 4
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6
DVB-T in production test circuit . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Handling information. . . . . . . . . . . . . . . . . . . . 10
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon Netherlands B.V. 2016.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 30 August 2016
Document identifier: BLF888E_BLF888ES