24/7 RF
Reference Book
for High Performance
RF Products
Version 2 - 2017
The Leading Global
Partner in RF Power
Ampleon is a young and innovative company with
50 years of experience in RF Power.
Furthermore, our technology and our drive in innovation
Our name, derived from “amplify” (=enhance) and
“eon” (=eternity), reflects the products we stand
for and our commitment to “Amplify the future”
white goods and industrial landscape with sustainable and
of RF Power.
have defined a new market segment for controlling heat
and power: RF Energy, which enables us to improve the
overall higher efficiency. Given our comprehensive line-up,
we have set-out to exploit the full potential of data and
energy transfer in RF.
Global Footprint and Customer Proximity
Solutions for a Variety of Segments
With our headquarters in Nijmegen/Netherlands and
We are a leading company in the segments of Mobile
more than 1.250 employees worldwide, we are dedicated
Broadband; Broadcast; Industrial, Scientific & Medical,
to creating optimal value for our customers. In more than
Air Traffic Control and Aerospace & Defense (LDMOS).
18 locations around the globe our international team of
experts is always close to our customers and amplified
by our core values of Focus, Excellence and Velocity. Our
intention is to always bring our customers a significant step
further with the help of outstanding RF power solutions.
Technology and Innovations
We leverage leading edge process technologies for higher
performance (GaN, LDMOS) and cost-efficiency to deliver
a leading portfolio of options for RF Power. Our product
consistency is unprecedented and we drive innovations
in traditional as well as new application areas.
Comprehensive Support
We build on decades of RF leadership and related
application know-how. Our customers rely on our dedicated
experts to help them solve their design challenges.
We value high-quality long-term partnerships with our
customers and thus create a clear competitive advantage.
Amplify the future
2
24/7 RF - Version 2 - 2017
The second edition of
24/7 RF
24/7 RF is a synonym for our dedication
to RF Power: 24 hours, 7 days a week.
We are passionate about walking you through
from a sketchy idea to a finished design. This is
what we also reflect in this second edition by
turning true pictures into the style of a medieval
painting – a piece of artwork, just like our
products.
This latest edition of our reference book
not only includes our recommended product
portfolio but also links it to numerous
applications it is best suited for. It features
product highlights, describes technologies,
reveals latest trends, shows explanatory
diagrams, lists features and types, packaging and
packing data.
Beyond, you will find information about design
support, cross references and replacements.
We are convinced that 24/7 RF is the ultimate
guide to anything you need to know about
Ampleon’s High Performance RF products.
24/7 RF Web Page
www.ampleon.com/24-7rf
Enjoy reading!
24/7 RF - Version 2 - 2017
3
Contents
1. RF Applications����������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������7
1.1 Mobile Broadband�������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������7
1.1.1 Base Stations (all cellular standards and frequencies)��������������������������������������������������������������������������������������������������7
1.1.2 Small Cells������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 11
1.1.3 4.5G and Massive MIMO (multiple-input and multiple-output)������������������������������������������������������������������� 12
1.2 Broadcast������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 15
1.2.1 FM/HDR/DAB Radio������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 16
1.2.2 UHF/D-TV��������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 17
1.2.3 VHF/D-TV���������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 18
1.3 Industrial, Scientific and Medical (ISM)����������������������������������������������������������������������������������������������������������������������������������������������������������������21
1.3.1 CO2 Laser Exciters and Plasma Generators������������������������������������������������������������������������������������������������������������������������������� 22
1.3.2 Medical and Industrial Imaging������������������������������������������������������������������������������������������������������������������������������������������������������������������� 22
1.3.3 Particle Accelerators���������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 22
1.3.4 Instrumentation����������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 23
1.4 RF Energy��������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������27
1.4.1 RF Cooking�����������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������29
1.4.2 RF Lighting������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������ 31
1.4.3 RF Heating and Drying�����������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������32
1.4.4 RF Ignition�������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������33
1.5 Aerospace & Defense������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������35
1.5.1 Radar����������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������35
1.5.2 Electronic Counter Measures (ECM)������������������������������������������������������������������������������������������������������������������������������������������������������36
1.5.3 Military Communications Systems (Milcom)�����������������������������������������������������������������������������������������������������������������������������36
2. Technologies������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������41
2.1 Best-in-Class LDMOS to drive any RF Power Application��������������������������������������������������������������������������������������������������������� 41
2.2 Best-in-Class GaN for High Frequency Performance�������������������������������������������������������������������������������������������������������������������� 43
2.3 RF Power Transistor Packages������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 44
3. RF Product Portfolio���������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������47
3.1 New Products������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������47
3.2 RF Power Transistors for Mobile Broadband���������������������������������������������������������������������������������������������������������������������������������������������� 50
3.2.1 0.4 - 1.0 GHz LDMOS Transistors��������������������������������������������������������������������������������������������������������������������������������������������������������������� 50
3.2.2 1.3 - 1.7 GHz LDMOS Transistors����������������������������������������������������������������������������������������������������������������������������������������������������������������� 51
3.2.3 1.8 - 2.0 GHz LDMOS Transistors���������������������������������������������������������������������������������������������������������������������������������������������������������������� 51
3.2.4 2.0 - 2.2 GHz LDMOS Transistors��������������������������������������������������������������������������������������������������������������������������������������������������������������52
3.2.5 2.3 - 2.4 GHz LDMOS Transistors����������������������������������������������������������������������������������������������������������������������������������������������������������������53
3.2.6 2.5 - 2.7 GHz LDMOS Transistors����������������������������������������������������������������������������������������������������������������������������������������������������������������53
3.2.7 3.4 - 3.8 GHz LDMOS Transistors����������������������������������������������������������������������������������������������������������������������������������������������������������������53
3.2.8 LDMOS Doherty Designs��������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 54
3.2.9 Single Package Asymmetric Doherty (PAD) LDMOS Transistors�����������������������������������������������������������������55
3.2.10 Overmolded Plastic (OMP) LDMOS Transistors��������������������������������������������������������������������������������������������������������������������55
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24/7 RF - Version 2 - 2017
3.2.11
3.2.12
3.2.13
3.2.14
MMIC LDMOS Transistors��������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������56
Small Cell LDMOS Transistors�������������������������������������������������������������������������������������������������������������������������������������������������������������������������56
MIMO LDMOS Transistors�������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������57
High Voltage LDMOS Transistors����������������������������������������������������������������������������������������������������������������������������������������������������������������57
3.3 RF Power Transistors for Broadcast������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 58
3.3.1 UHF Broadcast LDMOS Transistors (470 - 860 MHz)���������������������������������������������������������������������������������������������������� 58
3.3.2 HF / VHF Broadcast LDMOS Transistors (0 - 500 MHz)�����������������������������������������������������������������������������������������������59
3.3.3 HF / VHF Broadcast LDMOS Transistors (0 - 1600 MHz)������������������������������������������������������������������������������������������� 60
3.4 RF Power Transistors for ISM (Industrial, Scientific and Medical)����������������������������������������������������������������������������� 61
3.4.1 ISM LDMOS Transistors (0 - 500 MHz / XR)����������������������������������������������������������������������������������������������������������������������������������� 61
3.4.2 ISM LDMOS Transistors (0 - 1600 MHz)���������������������������������������������������������������������������������������������������������������������������������������������62
3.5 RF Power Transistors for RF Energy�������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 63
3.5.1 RF Energy LDMOS Transistors (0 - 500 MHz)���������������������������������������������������������������������������������������������������������������������������� 63
3.5.2 RF Energy LDMOS Transistors (915 MHz)�������������������������������������������������������������������������������������������������������������������������������������� 64
3.5.3 RF Energy LDMOS Transistors (2.45 GHz)������������������������������������������������������������������������������������������������������������������������������������� 64
3.6 RF Power Transistors for Aerospace & Defense�������������������������������������������������������������������������������������������������������������������������������������65
3.6.1 Avionics LDMOS Transistors������������������������������������������������������������������������������������������������������������������������������������������������������������������������������65
3.6.2 L-Band LDMOS Transistors��������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 66
3.6.3 S-Band LDMOS Transistors�������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 66
3.6.4 Sub-1 GHz LDMOS Transistors�����������������������������������������������������������������������������������������������������������������������������������������������������������������������67
3.6.5 Pallets and Modules������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������67
3.7 Gallium Nitride (GaN) RF Power Devices����������������������������������������������������������������������������������������������������������������������������������������������������������� 68
4. Design Support�������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������71
4.1 Simulation Models�������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 72
5. Replacements����������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 77
6. Packaging and Packing��������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 80
6.1 Packaging������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������ 80
6.2 Packing���������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������82
6.3 Marking Codes�������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 85
7. Abbreviations������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������ 86
8. Contact��������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 87
9. Product Index������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������ 88
24/7 RF - Version 2 - 2017
5
6
24/7 RF - Version 2 - 2017
RF Applications
Empowering Next
Generation Mobile
Communications
1. RF Applications
1.1
Mobile Broadband
1.1.1
Base Stations (all cellular standards and frequencies)
RF Power Transistors for Base Stations
Ampleon is the fastest growing supplier of LDMOS transistors for cellular infrastructure, leading the WCDMA and LTE markets.
Our promise is unprecedented performance combined with best-in-class application support and constant innovation.
Our design and manufacturing technologies ensure the best PA manufacturing yields in the industry.
Ampleon's latest 9 th and 10 th generation LDMOS RF transistors offer the best solutions for all cellular frequency bands.
With the current industry focus on cost reduction, we are extending our product portfolio with OMP and MMIC product
families, which combine high performance with low cost.
Single-Package Asymmetric Doherty (PAD) Transistors and MMICs, Integrated Doherty
PAD devices offer the highest efficiency, smallest footprint, and best cost-effectiveness, and can deliver P1dB power levels
up to 550 W. These products are DPD-friendly and developed to offer excellent video bandwidth. Our wide product portfolio
covers frequency bands from 450 MHz to 3.8 GHz and average power levels from 2 to 80 W. Discrete single-stage transistors
and asymmetric MMICs are available to suit most applications, from picocells to macrocells. We recently introduced 2-stage
integrated Doherty IC’s to reduce the size of the PAs for power levels of up to 8 W average. They are available in symmetric
and asymmetric versions to suit all applications, from driver (symmetric) to massive-MIMO and micro-cell (asymmetric). These
Doherty amplifiers integrate both the splitter and combiner inside the package and necessitate minimum external circuitry to
minimize cost and board space.
Product Highlight:
LDMOS PAD Transistor BLC10G18XS-320AVT
The BLC10G18XS-320AVT is a 320 W LDMOS packaged asymmetric
Doherty power transistor for base station applications at frequencies
from 1805 MHz to 1880 MHz.
Features
• Excellent ruggedness
• High-efficiency
• Low thermal resistance providing excellent thermal stability
• Lower output capacitance for improved performance in Doherty
applications
• Designed for low memory effects providing excellent digital pre-
distortion capability
• Integrated ESD protection
24/7 RF - Version 2 - 2017
7
Application Diagram of a Base Station
DPD
CFR
DUC
DDC
Power Amplifier
DVGA R F -BP
PLL
VC O
Dual
DAC
0
HPA
90
Transmitter
Q
IF -S AW
J E DE C
IF
MPA
DVGA Mixer+LO
Tower Mounted
Amplifier
Tx
Att.
ADC
LO
Duplexer
Digital
F ront
E nd
(J E DE C ) Interface
OBS AI / C PR I
Digital Baseband
J E DE C Interface
IQ-Modulator
I
J E DE C Interface
R F -S AW
Dual
ADC
BP or LP
Dual
DVGA
IF -S AW
C lock
Generator
Jitter C leaner
Dual
Mixer
PLL
VC O
LNA
TX / R X 1
LNA +VGA
Rx
µC
RX2
F ilter Unit
LNA+VGA
RF Power
Recommended Products
(1)
Type
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
Type
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
BLP7G22-05
BLP8G27-5
BLP7G22-10
BLP8G27-10
BLF9G38-10G*
BLM8G0710S-15PB(G)
BLP9G0722-20(G)
BLM8G1822-20B*
BLM7G1822S-20PB(G)
BLM9D2325-20AB*
BLM9D2527-20AB
BLM8D1822-25B*
700
700
700
700
3400
700
700
1800
1805
2300
2500
1800
2700
2700
2700
2700
3800
1000
2700
2200
2170
2500
2700
2200
5
5
10
10
10
15 (1)
20
20 (1)
20 (1)
20 (1)
20 (1)
25 (1)
28
28
28
28
28
28
28
28
28
28
28
28
BLM9D2327-25B*
BLM8G0710S-30PB(G)
BLP9H10S-30*
BLM7G1822S-40ABG
BLM7G1822S-40PB(G)
BLM7G1822S-40AB
BLM8G0710S-45AB(G)
BLP8G10S-45PG
BLP8G10S-45P
BLM8D1822S-50PB(G)
BLM8G0710S-60PB(G)
BLC9H10XS-60P*
2300
700
700
1805
1805
1805
700
700
700
1805
700
700
2700
1000
1000
2170
2170
2170
1000
1000
1000
2170
1000
1000
25 (1)
30 (1)
30
40 (1)
40 (1)
40 (1)
45 (1)
45
45
50 (1)
60 (1)
60 (1)
28
28
50
28
28
28
28
28
28
28
28
50
P3dB
* Check status in section 3.1, as this type is not yet released for mass production. For the complete product selection please see section 3.2
Product Highlight:
80 W LDMOS Packaged Asymmetric Doherty Power
Transistor for Base Station Applications at Frequencies
from 1805 MHz to 1880 MHz BLC9G20XS-550AVT
A compact Doherty design based on three BLC9G20XS-550AVT devices
achieves 48 % efficiency at 80 W average output power and 15.5 dB gain
with a 2-carrier LTE signal. It has a peak power capability (P3dB) of 550 W
at 28 V supply voltage.
8
24/7 RF - Version 2 - 2017
This Doherty is designed for LTE band 3 operation and is tailored to very
high peak power and volume manufacturing with high yields without
tuning. The PA features very high video bandwidth, enabling full-band
operation.
(1)
Type
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
BLC8G27LS-60AV
BLF8G38LS-75V
BLM7G1822S-80ABG
BLM7G1822S-80PBG
BLM7G1822S-80PB
BLM7G1822S-80AB
BLF9G38LS-90P
BLF8G24LS-100(G)V
BLF8G27LS-100(G)V
BLC8G27LS-100AV
BLC9G20LS-120V
BLF8G22LS-140
BLF8G27LS-140V
BLC8G27LS-140AV
BLF8G24LS-150(G)V
BLF8G27LS-150(G)V
BLC9G27LS-151AV
BLF8G10LS-160V
BLF8G10L(S)-160
BLF8G20LS-160V
BLC9G20XS-160AV
BLC9G20LS-160PV
BLC8G21LS-160AV
BLF9G20LS-160V
BLP8G21S-160PV
BLC8G27LS-160AV
BLF8G19LS-170BV
BLC9G24XS-170AV
BLC8G27LS-180AV
BLF8G22LS-200(G)V
BLC8G27LS-210PV
BLF8G22LS-205V
BLF8G20LS-220
BLF8G22LS-220
BLF8G20LS-230V
BLC9G20LS-240PV
BLF8G22LS-240
BLC8G24LS-241AV
2300
3400
1805
1805
1805
1805
3400
2300
2500
2496
1805
2000
2600
2496
2300
2500
2496
925
920
1800
1805
1805
1805
1800
1880
2496
1800
2300
2496
2110
2500
2100
1800
2110
1800
1805
2110
2300
2690
3800
2170
2170
2170
2170
3600
2400
2700
2690
1995
2200
2700
2690
2400
2700
2690
960
960
2000
1880
2000
2025
2000
2025
2690
1990
2400
2690
2170
2700
2200
2000
2170
2000
1995
2170
2400
60 (1)
75 (1)
80 (1)
80 (1)
80 (1)
80 (1)
90
100
100
100 (1)
120 (1)
140
140
140 (1)
150
150
150 (1)
160
160
160
160 (1)
160 (1)
160 (1)
160
160
160 (1)
170
170 (1)
180 (1)
200
200 (1)
205
220
220
230
240 (1)
240
240 (1)
28
30
28
28
28
28
28
28
28
28
28
28
32
28
28
28
28
30
30
28
30
28
28
28
28
28
32
30
28
28
28
28
28
28
28
28
28
28
Type
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
BLC8G27LS-240AV
BLF8G09LS-270W
BLF8G10LS-270GV
BLF8G10LS-270
BLF8G09LS-270GW
BLF8G10LS-270V
BLP8G10S-270PW
BLF8G22LS-270GV
BLF8G22LS-270
BLF8G22LS-270V
BLF8G10LS-300P
BLC9H10XS-300P*
BLC8G20LS-310AV
BLC9G20LS-361AVT
BLC9G27XS-380AVT
BLC8G09XS-400AVT
BLF8G09LS-400PW
BLF8G09LS-400PGW
BLC9H10XS-400P*
BLC9G15LS-400AVT
BLC9G15XS-400AVT
BLC8G20LS-400AV
BLF8G20LS-400PV
BLF8G20LS-400PGV
BLC9G20XS-400AVT
BLC9G22XS-400AVT
BLC8G22LS-450AV
BLC9G20LS-470AVT
BLC9G20XS-550AVT
BLC9H10XS-800P*
BLC10G20LS-240PWT
BLC10G22LS-240PVT
BLC10G18XS-320AVT*
BLC9H10XS-350A*
BLC9G21LS-60AV*
BLC9H10XS-400A*
BLC9H10XS-600A*
2500
716
790
820
716
790
700
2110
2110
2110
700
700
1900
1805
2500
859
716
716
700
1452
1452
1800
1805
1805
1805
2110
2110
1805
1805
700
1805
2110
1800
600
2500
700
700
2700
960
960
960
960
960
900
2170
2170
2170
1000
1000
2000
1990
2700
960
960
960
1000
1511
1511
2000
1995
1995
1880
2200
2170
1990
1880
1000
1995
2220
1900
1000
2700
1000
1000
240 (1)
270
270
270
270
270
270
270
270
270
300
300 (1)
310 (1)
360 (1)
380 (1)
400 (1)
400
400
400 (1)
400 (1)
400 (1)
400 (1)
400
400
400 (1)
400 (1)
450 (1)
470 (1)
550 (1)
800 (1)
240 (1)
240 (1)
320 (1)
350 (1)
380 (1)
400 (1)
600 (1)
28
28
28
28
28
28
28
28
28
28
28
50
28
28
32
32
28
28
50
32
32
32
28
28
32
32
28
28
28
50
28
28
32
50
32
50
50
RF Applications
Recommended Products (continued)
P3dB
* Check status in section 3.1, as this type is not yet released for mass production. For the complete product selection please see section 3.2
Product Highlight:
Power LDMOS Transistor BLP9G0722-20G
The BLP9G0722-20G is a 20 W plastic LDMOS discrete driver for base
station applications at frequencies from 400 MHz to 2700 MHz.
Features
• High efficiency
• Small footprint
• Excellent ruggedness
• Designed for broadband operation
• Excellent thermal stability
• High power gain
• Integrated ESD protection
24/7 RF - Version 2 - 2017
9
Integrated Doherty Amplifiers for State-of-the-Art Wireless Infrastructure
In order to achieve the smallest footprint possible, Ampleon combined its latest generations of LDMOS technology with the
Doherty concept. We offer the world’s first fully integrated Doherty power amplifiers in a small package. They are available
in symmetric and asymmetric versions to suit all applications, from driver (symmetric) to massive-MIMO and micro cell
(asymmetric). These 2-stage Doherty amplifiers integrate both the splitter and combiner inside the package and necessitate
minimum external circuitry to minimize cost and board space.
The world’s first fully integrated Doherty transistor looks like an ordinary class-AB transistor but contains a splitter, dual-stage
main and peak devices, delay lines, and a combiner integrated inside the package. With the ease of use of an ordinary class-AB
amplifier, it also provides significant space and cost savings. It is ideally suited for space-constrained applications like small cell
base stations and massive antenna arrays.
Integrated Doherty Portfolio: 1.8 - 2.2 GHz
Product
Doherty
Configuration
Matching
Band
P3dB
Efficiency @
8 dB BO
Gain
Technology
BLM9D1822-12B*
BLM8D1822-25B*
BLM9D1822-25B*
BLM9D1822S-25PB(G)*
BLM9D18-25AB*
BLM9D1822S-50PB(G)*
BLM8D1822S-50PB(G)
2-way 1:1
2-way 1:1
2-way 1:1
2-way 1:1
2-way 1:2
2-way 1:1
2-way 1:1
50 Ω in
50 Ω in
50 Ω in
50 Ω in
50 Ω in
50 Ω in
50 Ω in
1.8 - 2.2 GHz
1.8 - 2.2 GHz
1.8 - 2.2 GHz
1.8 - 2.2 GHz
1.8 GHz
1.8 - 2.2 GHz
1.8 - 2.2 GHz
41 dBm
44 dBm
44 dBm
44 dBm
44.8 dBm
47 dBm
48.4 dBm
tbd
tbd
tbd
tbd
tbd
tbd
39 %
tbd
tbd
tbd
tbd
tbd
tbd
27 dB
LDMOS MMIC
LDMOS MMIC
LDMOS MMIC
LDMOS MMIC
LDMOS MMIC
LDMOS MMIC
LDMOS MMIC
Integrated Doherty product portfolio: > 2.3 GHz
(1)
Product
Doherty
Configuration
Matching
Band
P3dB
Efficiency @
8 dB BO
Gain
Technology
BLM9D2327-12B*
BLM9D2527-20AB
BLM9D2325-20AB
BLM9D2327-25B*
2-way 1:02
2-way 1:02
2-way 1:02
2-way 1:1
50 Ω in
50 Ω in
50 Ω in
50 Ω in
2.3 - 2.7 GHz
2.5 - 2.7 GHz
2.3 - 2.5 GHz
2.3 - 2.7 GHz
41 dBm
43 dBm
43 dBm
44 dBm
tbd
43 % (1)
tbd
tbd
tbd
28 dB
tbd
tbd
LDMOS MMIC
LDMOS MMIC
LDMOS MMIC
LDMOS MMIC
8.5 dB back-off
* Check status in section 3.1, as this type is not yet released for mass production. For the complete product selection please see section 3.2
Product Highlight:
20 W LDMOS Packaged Asymmetric Doherty Power
Transistor for Base Station Applications at Frequencies
from 2500 MHz to 2700 MHz BLM9D2527-20AB
An ultra-compact Doherty design based on BLM9D2527-20AB device
achieves 43 % efficiency at 3 W average output power and 28 dB gain with
LTE signal. It has a peak power capability (P3dB) of 20 W
at 28 V supply voltage.
10
24/7 RF - Version 2 - 2017
This Doherty is designed for 4.5G band 41 and is tailored to volume
manufacturing with high yields without tuning. The PA features high video
bandwidth, enabling full-band operation.
1.1.2
Small Cells
With the explosion of cellular data usage and the limited number of sites available for new macro base stations, operators have
to find new ways of offering high data rates and excellent quality of service. One option is to strengthen the macro network with
small cells, known as picocells (0.25 to 1 W average) and microcells (2 to 5 W average). Ampleon offers several types of solutions
to the small cell PAs designer, optimized for performance, integration, or cost.
RF Applications
Application Diagram of a typical Small Cell Base Station
TRANSMITTER
IQ-MODULAT OR
POWER AMPLIFIER
I
DVGA
OR VG A
PLL
VC O
0
RF-BP
MPA
HPA
90
Q
IF-SA W
MIXER + LO
DVG A
Att.
DSP
TOWER-MOUNTED
AMPLIFIER
RECEIVER
BP or LP
LNA + VG A
DUPLEXER
IF-SA W
RF-SA W
LNA
Rx
BP or LP
DUAL
DVGA
PLL
VC O
DUAL
MIXER
IF-SA W
TX/RX1
Tx
LO
μC
FIL TER
UNIT
LNA
RX 2
LNA + VG A
RF-SA W
Recommended Products
(1)
Type
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
Type
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
BLP8G27-5
BLP7G22-05
BLP7G22-10
BLP8G27-10
BLF9G38-10G*
BLM8G1822-20B*
BLP9G0722-20(G)
BLM7G1822S-20PB(G)
BLM9D2325-20AB*
BLM9D2527-20AB
BLM8D1822-25B*
700
700
700
700
3400
1800
700
1805
2300
2500
1800
2700
2700
2700
2700
3800
2200
2700
2170
2500
2700
2200
5
5
10
10
10
20 (1)
20
20 (1)
20 (1)
20 (1)
25 (1)
28
28
28
28
28
28
28
28
28
28
28
BLM9D2327-25B*
BLM7G1822S-40ABG
BLM7G1822S-40PB(G)
BLM7G1822S-40AB
BLM8D1822S-50PB(G)
BLM8G0710S-60PBG
BLC9G21LS-60AV*
BLM7G1822S-80ABG
BLM7G1822S-80PB(G)
BLM7G1822S-80AB
BLF9G38LS-90P
2300
1805
1805
1805
1805
700
2500
1805
1805
1805
3400
2700
2170
2170
2170
2170
1000
2700
2170
2170
2170
3600
25 (1)
40 (1)
40 (1)
40 (1)
50 (1)
60 (1)
60 (1)
80 (1)
80 (1)
80 (1)
90
28
28
28
28
28
28
28
28
28
28
28
P3dB
* Check status in section 3.1, as this type is not yet released for mass production. For the complete product selection please see section 3.2
Product Highlight:
Power LDMOS Transistor BLM8D1822-25B
The BLM8D1822-25B is a 25 W plastic PQFN LDMOS dual-stage integrated
Doherty PA designed for micro cell applications. This cost-efficient,
wideband device has an ultra-small footprint and covers all base-station
frequencies from 1800 to 2200 MHz.
Features
• High efficiency
• Excellent ruggedness
• Designed for broadband operation
• Excellent thermal stability
• High power gain
• Integrated ESD protection
24/7 RF - Version 2 - 2017
11
1.1.3
4.5G and Massive MIMO (multiple-input and multiple-output)
With the increasing need for higher transmission capability and M2M connection, today's 4G network is not capable of meeting
the next generation mobile broadband (MBB) requirements. On the other hand, 5G will presumably not be commercially
deployed until 2020. Hence there is a need for an in-between technology to fill in the gap. 4.5G, also known as LTE-Advanced
Pro, is a smoother evolution of 4G to provide Gigabit transmission capability and massive M2M connection for MBB. It is officially
released in the Release-13 version of 3GPP.
4.5G adopts a number of 5G technologies. Massive MIMO is one of the key adoptions. Massive MIMO aims to significantly
increase the number of antenna elements and spatial streams in a base transceiver station (BTS) to be much greater than the
configurations used in base stations today to enhance reliability and throughput.
Ampleon is one of the market leaders in terms of PA solutions for massive MIMO.
Application Diagram of MIMO
The design diagram with the scheme of zero-IF transceiver is shown below, in which each highly integrated receiver or
transmitter chip with built-in PLL supports 4 receiving or transmitting channels respectively.
RF Front End
Receiver
RXI1
ANT1
Switch
RXQ1
LNA
PA
RXI2
RXQ2
PLL
RF Front End
ANT2
RXI3
Switch
LNA
RXQ3
PA
SPI
SCLI
DIN
RXI4
MCU
DOUT
CS1
RXQ4
CS2
Reference Clock
RF Front End
Transmitter
TXI1
ANT3
Switch
TXQ1
LNA
PA
TXI2
TXQ2
PLL
RF Front End
TXI3
ANT4
Switch
LNA
PA
TXQ3
Power
Management
TXI4
TXQ4
Product Highlight:
LDMOS 2-stage integrated Doherty MMIC
BLM8D1822S-50PB(G)
The BLM8D1822S-50PB(G) is a dual section, 2-stage fully integrated
Doherty MMIC solution. The carrier and peaking device, input splitter
and output combiner are integrated in a single package. This multiband
device is perfectly suited as general purpose driver or small cell final in the
frequency range from 1805 MHz to 2170 MHz, a-vailable in gull wing or flat
lead outline.
12
24/7 RF - Version 2 - 2017
Features
• High efficiency
• Excellent ruggedness
• Excellent thermal stability
• High power gain
• Integrated ESD protection
(1)
Type
Fmin
(MHz)
Fmax
(MHz)
P3dB
(W)
VDS
(V)
BLM9D2325-20AB*
BLM9D2527-20AB
BLM8D1822-25B*
BLM9D2327-25B*
BLM9D18-25AB*
BLM8D1822S-50PB(G)
2300
2500
1800
2300
1800
1805
2500
2700
2200
2700
1880
2170
20 (1)
20 (1)
25 (1)
25 (1)
25 (1)
50 (1)
28
28
28
28
28
28
RF Applications
Recommended Products
P3dB
* Check status in section 3.1, as this type is not yet released for mass production.
For the complete product selection please see section 3.2
Product Highlight:
Power LDMOS Transistor BLM9D18-25AB
The BLM9D18-25AB is a 25 W plastic PQFN LDMOS dual-stage integrated
assymetrical Doherty PA designed for MIMO applications. This costefficient device has an ultra-small footprint and covers base-station
frequencies from 1800 to 1880 MHz.
Features
• High efficiency
• Excellent ruggedness
• Excellent thermal stability
• High power gain
• Integrated ESD protection
24/7 RF - Version 2 - 2017
13
14
24/7 RF - Version 2 - 2017
1.2
RF Applications
Amplifying the Future of
TV & Broadcasting
Broadcast
Amplifying the Future of TV & Broadcasting
Digital TV accounts for over 70 % of the broadcasting market. With parts of the UHF band reallocated for mobile telephony
(e.g. LTE), operators need to make the most efficient use of the remaining spectrum.
LDMOS Solutions from the Industry Leader for all Segments of the Broadcast Market
Addressing these demands for more efficiency, the broadcasting market is moving away from traditional class A-B solutions.
Solutions based on narrowband and ultra-wideband Doherty power amplifiers deliver increased efficiency of 50 % and above.
In the near future, asymmetrical Doherty amplifiers may provide even higher efficiencies.
We are committed to the UHF-TV industry and continue to invest in UHF-TV LDMOS technology, so that we can deliver
products that support increasingly rich content.
VHF, FM, and Analog TV Markets
Ampleon has enabled the market to transition to and reap the benefits of LDMOS-based solutions. And we will continue to
support our legacy products through customer product life-cycles. We have recently enhanced our broadcast offering with
a full range of eXtremely Rugged (XR) products in our Overmoulded Plastic (OMP) package platform.
Solutions
• FM/HDR/DAB Radio
• UHF/D-TV
• VHF/D-TV
Product Highlight:
UHF Power LDMOS Transistor BLF898(S)
Designed for broadcast Doherty transmitter applications, including
broadcast transmitters in the UHF band and digital broadcasting systems,
this 900 W LDMOS RF power transistor delivers excellent ruggedness and
is ideally suited for use in digital and analog environments.
Features
• Designed for symmetric and asymmetric Doherty operation
• High efficiency
• Integrated dual sided ESD protection
• Excellent ruggedness
• High power gain
• Excellent reliability
• Easy power control
24/7 RF - Version 2 - 2017
15
Application Diagram of a TV Transmitter
typ. 0.5 kW
DVB-T
Driver stages
typ. 5 kW DVB-T
output power
harmonic
filter
power
monitor
TV exciter
DVB-T
8× final
amplifiers
1.2.1
FM/HDR/DAB Radio
FM (88 - 108 MHz)
FM applications need pure power, resulting in high power building blocks. Ampleon’s FM solutions not only deliver high power
but are highly efficient, with our latest devices exceeding 85 % efficiency.
Furthermore, FM solutions must be capable of operating under the harshest of conditions. Our eXtremely Rugged (XR)
packaging, which supports VSWR > 65 : 1, ensures our products and your service keeps going despite severe operational
conditions.
DAB and HDR
DAB and HDR radio have the same basic requirements as FM: power and robustness. In addition, as they operate across a
broader frequency range, they also need to be highly linear. Ampleon’s BLFxxxXR transistor series is both highly linear and
stable, making them ideal for these systems.
Ampleon also creates demonstration and reference designs that are optimized in size and performance for radio broadcasting.
These designs are often implemented directly by customers into their systems.
Features and Benefits
• Small footprint
• Ready for production designs
• Printed planar balun design instead of coaxial baluns
Product Highlight:
Power LDMOS Transistor BLF188XR(S)
This 1400 W high power, extremely rugged LDMOS power transistor is
ideal for broadcast and industrial applications in the HF to 600 MHz band.
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24/7 RF - Version 2 - 2017
Features
• Easy power control
• Integrated ESD protection
• Excellent ruggedness
• High efficiency
• Excellent thermal stability
• Designed for broadband operation (HF to 600 MHz)
Bands
Type
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
Test signal
BLP10H603
BLP10H605
BLP35M805
BLP10H610
BLP27M810
BLF571
BLP05H635XR(G)
BLP05H675XR(G)
BLP05H6110XR(G)
BLP05H6150XR (G)
BLP05H6250XR(G)
BLF182XR(S)
BLP05H6350XR(G)
BLF183XR(S)
BLF174XR(S)
BLF184XR(S)
BLF184XRG
BLP05H6700XR
BLF178P
BLF178XR(S)
BLF188XR(S)
BLF188XRG
BLF189XRA(S)*
BLF189XRB(S)*
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
1
1
1400
1400
3500
1400
2700
500
600
600
600
600
600
600
600
600
128
600
600
600
128
128
600
600
300
150
2.5
5
5
10
10
20
35
75
110
150
250
250
350
350
600
700
700
700
1200
1400
1400
1400
1600
1900
50
50
28
50
28
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
62
59.6
17
60
19
70
75
75
75
75
75
75
75
75
73
73.5
73.5
73
75
72
73
73
tbd
tbd
22.8
22.4
18
22
17
27.5
27
27
27
27
27
28
27.5
28
29
23.9
23.9
23
28.5
28
24.4
24.4
tbd
tbd
CW
CW
CW pulsed, class-AB
CW
Pulsed CW
CW
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
CW
Pulsed
RF Applications
Recommended Products for FM/HDR/DAB
* Check the status in section 3.1, as this type is not yet released for mass production. For the complete product selection please see section 3.3
1.2.2
UHF/D-TV
The UHF (470 - 800 MHz) market is diversifying and taking different approaches to the implementation of full band coverage
with highest possible efficiency. The two main paths are single band ultra-wideband Doherty (UWB) solutions or classical or
wideband Doherty solutions using sub-bands.
Ampleon supports both approaches with dedicated RF power transistors and application designs. For example, our latest
BLF888E transistor is a 3-band ultra-wideband Doherty solution achieving 50 % efficiency across the band. This is a unique
solution in the market.
For classical Doherty we are also developing solutions based on our upcoming BLF898 transistor which will have the highest
DVB-T power capability (180 W average) and will be capable of covering the complete UHF band using a flexible output combiner
design with multiple sub-bands. We are also working on an odd-mode Doherty solution based on the upcoming BLF898(S).
Product Highlight:
UHF Power LDMOS Transistor BLF888E(S)
The BLF888E is a 750 W LDMOS RF power transistor for UHF broadcast
Doherty transmitter applications. The excellent ruggedness of this device
makes it ideal for digital and analog transmitter applications.
Features
• Designed for asymmetric Doherty operation
• High efficiency
• Integrated ESD protection
• Excellent ruggedness
• High power gain
• Excellent reliability
• Easy power control
24/7 RF - Version 2 - 2017
17
Recommended Products for UHF/D-TV (470 - 800 MHz)
Type
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
PL(AV)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
Test signal
BLP35M805
BLP27M810
BLF640
BLF571
BLP10H630P(G)
BLF642
BLP10H660P (G)
BLP10H690P(G)
BLP10H6120P(G)
BLF881(S)
BLP15M7160P
BLF882(S)
BLF884P(S)
BLF888A(S)
BLF888B(S)
BLF888D(S)
BLF888E(S)
BLF898(S)*
10
10
10
10
10
1
10
10
10
1
10
10
470
470
470
470
470
470
3500
2700
2200
500
1000
1400
1000
1000
1000
1000
1500
860
860
860
860
806
790
806
5
10
10
20
30
35
60
90
120
140
160
200
300
600
650
900
110
120
115
150
180
28
28
28
50
50
32
50
50
50
50
28
50
50
50
50
50
50
50
17
19
31
70
68
63
68
68
68
49
59.7
63
46
31
33
40
52
32
18
17
19.3
27.5
18
19
18
18
18
21
19.4
20.6
21
20
21
17
17
16
CW pulsed, class-AB
Pulsed CW
1-c W-CDMA
CW
Pulsed RF
CW
Pulsed RF
Pulsed RF
Pulsed RF
CW
CW
CW
CW
DVB-T (8k OFDM)
DVB-T (8k OFDM)
DVB-T (8k OFDM)
DVB-T (8k OFDM)
DVB-T (8k OFDM)
* Check status in section 3.1, as this type is not yet released for mass production. For the complete product selection please see section 3.3
1.2.3
VHF/D-TV
VHF-TV Band (170 - 250 MHz)
Ampleon’s RF solutions for VHF-TV are highly efficient, with our latest solutions exceeding 85 % efficiency. These high power
solutions provide the building blocks needed to deliver the necessary broadcast reach. These products also need to be able
to operate in extremely harsh conditions, making them the ideal candidates for our eXtremely Rugged offering which supports
VSWR > 65 : 1. For design purposes, linearity needs to be pre-correctable.
For VHF-TV applications, Ampleon offers demonstration and reference class-AB applications that are optimized in both size
and performance. These designs are often implemented directly by customers into their systems.
Recommended Products VHF-TV Band (170 - 250 MHz)
Type
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
Test signal
BLP10H603
BLP10H605
BLP35M805
BLP10H610
10
10
10
10
1400
1400
3500
1400
2.5
5
5
10
50
50
28
50
62
59.6
17
60
22.8
22.4
18
22
CW
CW
CW pulsed, class-AB
CW
Product Highlight:
Power LDMOS Transistor BLP05H6350XR(G)
The BLP05H6350XR is a 350 W LDMOS RF power transistor for broadcast
transmitter and industrial applications. It can deliver 350 W in broadband
applications from HF to 600 MHz. Its excellent ruggedness and
broadband performance make it ideal for digital transmitter applications.
18
24/7 RF - Version 2 - 2017
Features
• Integrated ESD protection
• Excellent ruggedness
• High efficiency
• Excellent reliability
• Easy power control
Type
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
Test signal
BLP27M810
BLF571
BLP05H635XR(G)
BLP05H675XR(G)
BLP05H6110XR(G)
BLP05H6150XR(G)
BLP05H6250XR(G)
BLF182XR(S)
BLF573(S)
BLP05H6350XR(G)
BLF183XR(S)
BLF574
BLF574XR(S)
BLF184XR(S)
BLF184XRG
BLP05H6700XR(G)
BLF578
BLF578XR(S)
BLF188XR(S)
BLF188XRG
BLF189XRA(S)*
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
1
2700
500
600
600
600
600
600
600
500
600
600
500
500
600
600
600
500
500
600
600
300
10
20
35
75
110
150
250
250
300
350
350
600
600
700
700
700
1200
1400
1400
1400
1600
28
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
19
70
75
75
75
75
75
75
70
75
75
70
74.7
73.5
73.5
73
75
69
73
73
tbd
17
27.5
27
27
27
27
27
28
27.2
27.5
28
26.5
24
23.9
23.9
23
26
23.5
24.4
24.4
tbd
Pulsed CW
CW
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
CW
Pulsed RF
Pulsed RF
CW
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
CW
Pulsed RF
Pulsed RF
Pulsed RF
CW
RF Applications
Recommended Products VHF-TV Band (170 - 250 MHz) (continued)
* Check the status in section 3.1, as this type is not yet released for mass production. For the complete product selection please see section 3.3
Product Highlight:
Power LDMOS Transistor BLP05H6700XR(G)
The BLP05H6700XR is a 700 W extra rugged LDMOS power transistor
optimized for broadcast and applications in the HF to 600 MHz band.
Features
• Easy power control
• Integrated dual sided ESD protection
• Excellent ruggedness
• High efficiency
• Excellent thermal resistance due to copper flange
• Designed for broadband operation (HF to 600 MHz)
24/7 RF - Version 2 - 2017
19
20
24/7 RF - Version 2 - 2017
1.3
RF Applications
Robust Solutions Serving
in Harsh and Sensitive
Environments
Industrial, Scientific and Medical (ISM)
The ISM frequency bands feature a diverse range of applications including chemical processing, magnetic resonance imaging
(MRI), electro coagulation surgical equipment, precipitation monitoring, and wind profiling. Yet, all these applications share
common requirements, such as high output power, high efficiency, robustness and thermal stability.
Rugged Solutions, Harsh Environments
Systems operating in the ISM band need to share their bandwidth with short-range, low-power communications systems and
radio-frequency identification (RFID) applications. Many ISM applications suffer from severely unmatched inputs and outputs,
demanding very rugged solutions. Whatever the challenge, we have the RF power solutions you need.
RF Power for ISM up to 1600 MHz
Our portfolio includes field-proven LDMOS devices that help developers create ISM systems that deliver high performance
and a long lifetime.
RF Power for the ISM 2.45 GHz Band
Due to its global availability, the 2.45 GHz band supports a wide range of ISM applications including medical therapy as well
as many RF Energy applications (see section 1.4).
Low Power Transistors
Ranging from 2 W to tens of watts, our complete portfolio of low power RF transistors includes devices across all ISM frequencies
and applications. This makes Ampleon the one-stop source for all your ISM RF needs.
Product Highlight:
Power LDMOS Driver Transistor BLF189XRB(S)
The BLF189XRB is a 1900 W extremely rugged LDMOS power transistor
for indusrial applications in the HF to 150 MHz band.
Features
• Easy power control
• Integrated ESD protection
• Excellent ruggedness
• High efficiency
• Excellent thermal stability
24/7 RF - Version 2 - 2017
21
Typical Applications
• RF drying
• RF welding
• Citizens’ Band (CB) radio communication
• Magnetic Resonance Imaging (MRI)
• CO2 lasers
• Plasma generators
• Particle accelerators
• RF heating
• RF thawing
• Chemical processing
• Plasma lighting
1.3.1
CO2 Laser Exciters and Plasma Generators
CO2 lasers turn electrical energy into concentrated infrared light energy. The plasma is formed by the gas when electrical energy
transforms into heat. This same process is used for plasma generators.
High power CO2 lasers are used for cutting and welding while lower power applications include engraving. Plasma generators
are primarily used for power generation or to accelerate particle beams, and for plasma etching or deposition in the
semiconductor industry.
These devices need high power amplifiers. High power generates heat. Even highly efficient designs still need to dissipate extra
heat effectively and our ACP3 package, with its low thermal resistance, helps doing that even for very high power systems.
1.3.2
Medical and Industrial Imaging
For doctors or clinicians is it necessary to get pictures of the anatomy and the physiological processes of the body in both health
and disease. Ampleon works with many established brands in helping improve the world of healthcare through safe, efficient
and groundbreaking medical imaging concepts.
However MRI is not only used for medical applications, it can also be used in the industrial market. For example, MRI is used to
measure gas flow in the petrochemical industry.
1.3.3
Particle Accelerators
Particle accelerators have endless potential including the development of clean energy, purification of air or water, targeted
Product Highlight:
Broadband Power LDMOS Transistor BLF647P
The BLF647P is a 200 W LDMOS RF power transistor for industrial
applications in the HF to 1500 MHz frequency range. Its excellent
ruggedness and broadband performance make it ideal for digital
applications.
22
24/7 RF - Version 2 - 2017
Features
• Integrated ESD protection
• Excellent ruggedness
• High power gain
• High efficiency
• Excellent reliability
• Easy power control
cancer treatment, detecting suspicious shipments and of course discovering scientific breakthroughs.
There are three different types of particle accelerators: the synchrotron, linear accelerator (linac) and cyclotron.
A cyclotron accelerates charged particles outwards from the centre along a spiral path, using a rapidly varying (radio frequency)
electric field, cyclotrons are widely used to produce particle beams in physics and nuclear medicine.
RF Applications
Synchrotrons are cyclic particle accelerators that enable large-scale facilities, since bending, beam focusing and acceleration
can be separated into different components. The 27 km long Large Hadron Collider in CERN Switzerland is the world’s largest
synchrotron.
Linear accelerators (Linacs) are increasingly being used in the medical industry for cancer treatment and creating radioactive
isotopes. Linacs run at high power with multiple amplifiers needed to generate particles.
1.3.4
Instrumentation
Ampleon offers a range of RF transistors and evaluation kits for RF instrumentation applications. Our wideband amplifiers
feature low noise and are exceedingly linear, making them particularly suitable for feedback channels in a wide range of
measuring equipment including vector signal transceivers, signal generators and RF power meters.
Recommended Products for ISM 0 - 500 MHz
Type
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
Test signal
BLP10H603
BLP10H605
BLP10H610
BLP05H635XR(G)
BLP05H675XR(G)
BLP05H6110XR(G)
BLP05H6150XR(G)
BLF182XR(S)
BLP05H6250XR(G)
BLF183XR(S)
BLP05H6350XR(G)
BLF184XR(G)
BLF184XRS
BLP05H6700XR(G)
BLF188XR(S)
BLF188XRG
BLF189XRA(S)*
BLF189XRB(S)*
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
1
1
1400
1400
1400
600
600
600
600
600
600
600
600
600
600
600
600
600
300
150
2.5
5
10
35
75
110
150
250
250
350
350
700
700
700
1400
1400
1600
1900
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
62
59.6
60
75
75
75
75
75
75
75
75
73.5
73.5
73
73
73
tbd
tbd
22.8
22.4
22
27
27
27
27
28
27
28
27.5
23.9
23.9
23
24.4
24.4
tbd
tbd
CW class-AB @ 860 MHz
CW pulsed class-AB @ 860 MHz
CW
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
CW
Pulsed
* Check the status in section 3.1, as this type is not yet released for mass production. For the complete product selection please see section 3.4
Product Highlight:
Power LDMOS Transistor BLF188XR(S)
The BLF188XR is a 1400 W extremely rugged LDMOS power transistor for
industrial applications, capable of providing an outstanding 1600 W of
peak output power. It can operate as high as 50 V and still pass extreme
ruggedness testing. The BLF188XR transistor’s ruggedness and excellent
load properties make it ideal for MRI applications.
Features
• Easy power control
• Integrated ESD protection
• Excellent ruggedness
• High efficiency
• Excellent thermal stability
24/7 RF - Version 2 - 2017
23
Recommended Products for ISM 0 - 1600 MHz
Type
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
Test signal
BLP35M805
BLF640
BLP10H610
BLP27M810
BLP10H630P(G)
BLF642
BLP10H660P(G)
BLP10H690P(G)
BLF645
BLP10H6120P(G)
BLP15M7160P
BLF1721M8LS200
BLF2324M8LS200P
BLF647P(S)
BLF6G13L(S)-250P
BLF6G15L(S)-500H
BLF10H6600P(S)
10
10
10
10
10
1
10
10
1
10
10
1700
2300
10
1300
1400
400
3500
2200
1400
2700
1000
1400
1000
1000
1400
1000
1500
2100
2400
1500
1300
1500
1000
5
10
10
10
30
35
60
90
100
120
160
200
200
200
250
500
600
28
28
50
28
50
32
50
50
32
50
28
28
28
32
50
50
50
17
31
60
19
68
63
68
68
56
68
59.7
28.5
32
70
56
19
46
18
19.3
22
17
18
19
18
18
18
18
19.4
19
17.2
18
17
16
20.8
CW pulsed, class-AB
1-c W-CDMA
CW
Pulsed CW
Pulsed RF
CW
Pulsed RF
Pulsed RF
CW
Pulsed RF
CW
2-c W-CDMA
1-c W-CDMA
Pulsed RF
CW
DVB-T (8k OFDM)
2-Tone, class-AB
For the complete product selection please see section 3.4
Product Highlight:
Power LDMOS Transistor BLP05H6700XR(G)
The BLP05H6700XRG is a 700 W extra rugged LDMOS power transistor
optimized for broadcast, industrial, aerospace and defense applications
in the HF to 600 MHz band.
24
24/7 RF - Version 2 - 2017
Features
• Easy power control
• Integrated dual sided ESD protection enables class C operation and
complete switch off of the transistor
• Excellent ruggedness VSWR 65 : 1
• High efficiency
• Excellent thermal stability
• Designed for broadband operation (HF to 600 MHz)
• 50 V operation for easy broadband matching
• Package available in both straight leads and gull wing form
RF Applications
Product Highlight:
Broadband LDMOS Driver Transistor BLP10H610
The BLP10H610 is a 10 W LDMOS broadband driver transistor in an OMP
package that is ideal for ISM applications operating at frequencies from
HF to 1400 MHz.
Features
• Easy power control
• Integrated ESD protection
• Excellent ruggedness
• High efficiency
• Excellent thermal stability
• Designed for broadband operation (HF to 1400 MHz)
24/7 RF - Version 2 - 2017
25
26
24/7 RF - Version 2 - 2017
1.4
RF Applications
Controlling
Heat and Power
RF Energy
Solid state RF Energy represents a radical approach to powering many different types of applications. For cooking, heating and
drying it replaces large, inflexible magnetron tubes with a small, controllable and accurate power source. For lighting, it provides
a highly efficient source that is close to natural light. And in plasma ignition, it enables cleaner combustion to improve fuel
economy and reduce carbon emissions. Ampleon is a founding member of the RF Energy Alliance whose members share the
vision of building a fast-growing and innovative marketplace and ecosystem around the use of solid state RF Energy as a highly
efficient and controllable source of heat and power.
Recommended Products for RF Energy Applications
Function
RF cooking
RF lighting
RF heating and drying
(1)
Product
Type
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
Test signal
Driver
Final
Driver
Final
Driver
Final
Driver
Final
Driver
Final
Driver
Final
Driver
Driver
Final
Pallet
Pallet
Pre-driver
Driver
Final
BLF2425M9L(S)30
BLC2425M8LS300P
BLP27M810
BLC2425M9LS250
BLP35M805
BLC05M6XS200
BLP10H605
BLP05H6350XR
BLF2425M9L(S)30
BLC2425M8LS300P
BLP27M810
BLC2425M9LS250
BLP27M810
BLP10H605
BLF0910H6LS500
BPC2425M9X2S250*
BPC2425M9XS250*
BLP27M810
BLM2425M7S60P
BLC2425M9LS700PV*
2400
2400
10
2400
10
425
10
10
2400
2400
10
2400
10
10
900
2400
2400
10
2300
2400
2500
2500
2700
2500
3500
450
1400
600
2500
2500
2700
2500
2700
1400
930
2500
2500
2700
2500
2500
30
300
10
250
5
200
5
350
30
300
10
250
10
5
500
300
300
10
90
1200 (1)
32
32
28
32
28
28
50
50
32
32
28
32
28
50
50
32
32
32
32
32
61
58
19
61
17
82
59.6
75
61
58
19
61
19
59.6
60
60
61
30
38
50
18.5
17
17
18
18
21
22.4
27.5
18.5
17
17
18
17
22.4
18
36
18
17
23
12.5
CW
CW
Pulsed CW
CW
CW pulsed, class-AB
CW
CW
Pulsed CW
CW
CW
Pulsed CW
CW
Pulsed CW
CW
CW
CW
CW
Pulsed CW
Pulsed CW
Pulsed CW
P3dB pulsed. ∂ ≤ 10%
* Check status in section 3.1, as this type is not yet released for mass production. For the complete product selection please see section 3.5
Product Highlight:
Power LDMOS Transistor BLC2425M9LS250
The BLC2425M9LS250 power transistor is one of the first devices to use
our ACP3 technology. Its copper flanges deliver leading Rth performance
and thermal conductivity. A plastic air-cavity package further improves
efficiency by avoiding contact with the bond wires.
Features
• Copper flange
• R th performance
• Excellent ruggedness
• Plastic air-cavity
24/7 RF - Version 2 - 2017
27
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24/7 RF - Version 2 - 2017
1.4.1
RF Applications
Revolutionizing
Cooking
RF Cooking
Cooking your Food to Perfection
Our solid state RF solutions will change the kitchen landscape. RF ovens perform more efficiently than conventional and
microwave-based ovens. And by providing increased control and power, food can be cooked more precisely, keeping taste,
texture and all the vitamins.
Replacing a single magnetron with multiple solid state RF sources brings additional possibilities for controlling the waveform
inside the oven. The frequency can be changed to match the type of food being cooked and by adjusting the phase of the
signals, the energy distribution can be altered to ensure every meal is cooked to perfection.
For the professional market, RF Energy solutions provide fast, reliable and accurate cooking to help fast food chains and
restaurants provide a speedy and appetizing service. In the home, RF Energy solutions not only cooks food to perfection
but also enable new form factors, such as tabletop ovens.
Application Diagram of a Solid State Cooking System
Key Features and Benefits
• Cooks homogeneously
• Less moisture lost than microwave or conventional ovens
Detector
in
coupled
out
out
• Accurate, controlled flexible cooking
• Able to cook different food items at the same time
• Ability to monitor cooking process
PC
CONTROL BOARD
Detector
in
coupled
out
out
• Supports different form factor designs
• Long lifetime
• Reduced maintenance costs
Detector
in
coupled
out
out
Detector
in
coupled
out
out
Product Highlight:
2-stage 250 W / 2.5 GHz RF Energy Pallet
BPC2425M9X2S250
This 250 W LDMOS Pallet is suitable for industrial applications in the
2.45 GHz frequency band. The BPC2425M9X2S250 is designed for high
power CW applications.
Features
• 300 W CW saturated power.
• 60 % Efficiency and 36 dB Gain @ 2.5GHz
• Optimized for industrial applications and RF cooking
• Integrated temperature sensing
• Cu-coin technology, no need for a baseplate
• 72 x 34 mm2
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1.4.2
RF Applications
Bringing Energy
to Light
RF Lighting
Our understanding of RF technology has enabled us to create some of the most rugged devices in the industry, a know-how that
we have instilled into our RF lighting transistors. In addition, the very high efficiency of our LDMOS transistors also allows our RF
lighting solutions to deliver very high lumens/watt, beating conventional sources.
Our latest RF lighting solutions are ideal for both indoor and outdoor area lighting in architectural, entertainment, high bay and
agricultural/horticultural applications. In the horticulture segment, RF lighting delivers full spectrum light which can help to
increase the speed of cultivating and the quality of crops for the next generation of farmers. This also makes it ideal for retail
applications to ensure items, from food to the latest fashion, look more natural under indoor lighting.
With energy savings of up to 50 % over high-pressure sodium and metal halide systems and long lamp lifetimes, RF lighting
helps to reduce maintenance costs in high bay/high mast installations from car parks to warehouses.
Application Diagram of RF Light-Emitting Plasma (LEP)
Key Features and Benefits
• Full spectrum light
• Controllability
• Dimmable
• Energy saving
Oscillator
MPA
HPA
• Long lifetime
• Lower maintenance cost
• Smaller form factor design
CONTROLLER
Product Highlight:
2-stage 200 W / 433 MHz RF Energy Pallet
BPC05M9XS200
This 200 W LDMOS Pallet is designed for high power CW applications @
433 MHz.
Features
• 200 W CW power
• 80 % Efficiency and 21 dB Gain @ 434 MHz
• Optimized for RF cooking and defrosting
• Integrated sensing
• Extremely rugged, no need for isolators
• Cu-coin technology, no need for a baseplate
• 125 x 33 mm2
24/7 RF - Version 2 - 2017
31
1.4.3
RF Heating and Drying
Industrial RF heating and drying is fast and flexible. It allows for a quicker and streamlined production process for many
manufacturing applications. It provides uniform heating and drying, a reduction in emissions and improvements in product
quality and efficiency.
We offer RF heating and drying solutions for both the 915 MHz and 2.45 GHz ISM frequency bands. Available as individual
transistors or complete pallets, our solutions can be easily scaled to deliver the needed power and can assist in reducing
emissions, improving efficiency and speeding up production processes. RF heating and drying can be used for a wide range
of applications from food preparation to chemical processing.
Key Features and Benefits
• Faster uniform drying
• Excellent ruggedness
• Thermal stability
• Efficiency savings
• Controllability, with available feedback loop
• Heat spreads evenly across a target
• Prevents local overheating
• Improved product quality
• Unprecedented system reliability
Product Highlight:
1-stage 250 W / 2.5 GHz RF Energy Pallet
BPC2425M9XS250
This 250 W LDMOS Pallet is suitable for industrial applications in the
2.45 GHz frequency band. The BPC2425M9XS250 is designed for high
power CW applications.
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24/7 RF - Version 2 - 2017
Features
• 300 W CW saturated power.
• 61 % Efficiency and 18 dB Gain @ 2.5 GHz
• Optimized for industrial applications
• Integrated temperature sensing
• Cu-coin technology, no need for a baseplate
• 52 x 34 mm2
1.4.4
RF Ignition
RF Applications
A Revolution in Automotive Ignition
The automotive industry is facing increasingly tough emission challenges. New European regulations, to be introduced in 2021,
will reduce fleet CO2 emissions from today’s 130 g/km to 95 g/km. While electric vehicles will play a role in meeting these new
targets, they still only represent a small percentage of vehicles sold. Automotive manufacturers will also need to make their
combustion engine vehicles more efficient and RF ignition offers a new and exciting concept which can improve fuel efficiency
and reduce pollutants.
RF plasma ignition is an emerging technology which has been in development for more than five years. Ampleon has been
working closely with partners to make this new technique a reality for efficient automotive use.
Micro plasma ignition has advantages over the traditional spark plug as it enables more complete combustion, allowing for
a leaner fuel mix and thus reducing carbon emissions and the need for catalytic converters or custom exhausts.
Key Features and Benefits
• Cost-efficient
• Easy implementation
• Improved fuel efficiency
• Reduced emissions
Product Highlight:
Power LDMOS Transistor BLC2425M9LS700PV
This is a 1200 W LDMOS power transistor for industrial applications
at 2.45 GHz, and particularly automotive plasma ignition. The
BLF2425M9LS700PV is designed for high power low duty cycle pulsed
applications and is assembled in a high performance ACP2 package.
Features
• Very high output power
• High efficiency
• 2400 to 2500 MHz operation
• Internal input and output matching
• Integrated rise/fall time protection
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1.5
Aerospace & Defense
SWaP + CR
Size, Weight and Power (SWaP) have long been the key requirements for aircraft systems. Systems need to be small, lightweight
and yet still powerful enough for long range operation. Moreover, today’s systems must also be Cost-efficient and Reliable (CR).
As a recognized global leader in base station and broadcast transmitters, Ampleon strengthens a broad portfolio for the
strategic aerospace & defense market. With 50 years of experience in RF, Ampleon is an established, market leading supplier
with a wealth of knowledge and expertise. We are committed to fully support customers' applications with a dedicated longevity
program that guarantees our parts will continue to be available throughout the operational lifetime.
In addition to GaN solutions that deliver the highest performance, we also offer dedicated Gen9 LDMOS solutions that provide
close to GaN performance at a much lower cost and with higher reliability and ruggedness. By being technology agnostic,
we can help customers find the best possible solution for their application needs.
All our aerospace & defense products are ITAR-free, simplifying logistics and paperwork for designs aimed at export markets.
We also provide global application support with offices in the US, Europe and Asia.
Fast Time to Market
To ensure you get your solutions to market as quick as possible, we offer discrete RF components, MMICs
and complete RF pallets.
1.5.1
Radar
Commercial avionics and military radar applications include air traffic control, situational awareness, weather radar, surveillance,
fire control, searching and tracking. These systems cover a wide range of operating frequencies and there is an ongoing
Product Highlight:
400 W LDMOS S-band Radar Power Module
BPS9G2934X-400
This 400 W GEN9 LDMOS power module is intended for S-band radar
applications in the frequency range from 2.9 GHz to 3.4 GHz.
Features
• 400 W Pulsed RF power designed for S-band (2.9 GHz to 3.4 GHz)
• Small size: 5.5 x 3.5 cm
• Low weight: 85 gr
• Excellent ruggedness, VSWR 10 : 1
• 1 x 10 6 h MTTF
• Input/output 50 Ω matched
• High efficiency
• Excellent thermal stability (silver plated base plate)
• High flexibility with respect to pulse formats
• 100 % RF testing in production
24/7 RF - Version 2 - 2017
35
RF Applications
Making the World a More
Predictable Place
transition within solid state power amplifier solutions and from bipolar to LDMOS and GaN. Ampleon offers a broad portfolio
of dedicated LDMOS and GaN solutions that covers all these frequency bands with highly reliable solutions.
Sub-1 GHz
Sub-1 GHz radar market includes the HF, VHF UHF radar and broadband communication systems for both civilian and defense
applications. Advances in solid state technologies, including LDMOS and GaN, enable SWaP (Size, weight and Power) optimization
in this application.
For specific sub band in the sub-1 GHz application, the extra rugged LDMOS technology offers unrivaled performance and
ruggedness at lowest cost.
Frequency Bands
• Sub-1 GHz
• Commercial Avionics (950 - 1215 MHz / 1030 - 1090 MHz)
• L-band (1 - 2 GHz)
• S-band (2 - 4 GHz)
• C-band (4 - 8 GHz)
• X-band (8 - 12 GHz)
• Ku-band (12 - 18 GHz)
1.5.2
Electronic Counter Measures (ECM)
Electronic counter measures / jammers are used in all walks of life from defense systems to cellular jammers. High power is
critical for this market along with a wide frequency range and high efficiency. Ampleon’s solutions ensure effective coverage
across a broad bandwidth with the highest power GaN products on the market.
Application Support
To support customers in developing and bringing new ECM solutions to market quickly, we have a range of demo boards
available on request.
1.5.3
Military Communications Systems (Milcom)
RF solutions for Milcom applications require the highest linearity to ensure clear, interference-free communication. Ampleon
offers dedicated solutions for Milcom applications that perform up to 10 dBC (IMD3 linearity) better than competitive products.
Our portfolio includes both GaN and LDMOS devices.
Product Highlight:
Broadband RF Power GaN HEMT
CLF1G0035(S)-200P
The CLF1G0035-200P and CLF1G0035S-200P are 200 W general
purpose broadband GaN HEMTs usable from DC to 3.5 GHz.
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24/7 RF - Version 2 - 2017
Features
• Operating frequency from DC to 3.5 GHz
• 200 W general purpose broadband RF Power GaN HEMT
• Excellent ruggedness (VSWR 10 : 1)
• High voltage operation (50 V)
• Thermally enhanced package
50 W GaN Device Comparison in 1000 - 2500 MHz 50 W Demonstration Board 18502-tone Intermodulation Distortion,
Δf=1 MHz, Vd=50 V
-20
Curves at 1, 1.8, 2.5 GHz
Ampleon’s device, Idq = 200 mA
Competitor A , Idq= 450 mA
Competitor B, Idq = 400 mA
RF Applications
-25
IMD3 (dBc)
-30
-35
-40
-45
-50
10
PEP Pout (W)
Recommended LDMOS Pallets for L / S-band Radar
Type
Pallet Size
Weight
Fmin
(MHz)
Fmax
(MHz)
Ppeak
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
Test signal
BLL6H1214P2S-250
BPS9G2934X-400*
BPS9G2933X-450*
BPS9G3135X-400*
5 x 12 cm
3.5 x 5.5 cm
3.5 x 5.5 cm
3.5 x 5.5 cm
80
85
85
85
1200
2900
2900
3100
1400
3400
3300
3500
250
400
450
450
45
32
32
32
48
43
45
44
27
12.5
13.5
12.5
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Recommended LDMOS Products for Sub-1 GHz Radar
Type
Fmin
(MHz)
Fmax
(MHz)
Freq.
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
Test signal
BLP10H610
BLP10H630P
BLP05H635XR
BLP10H660P
BLP05H675XR
BLP10H6120P
BLF182XR(S)
BLF183XR(S)
BLF574XR(S)
10
10
10
10
10
10
10
10
10
1400
1000
600
1000
600
1000
600
600
500
840 to 860
720
127
720
108
720
108
108
225
10
30
35
60
75
120
250
350
600
50
50
50
50
50
50
50
50
50
60
72
75
72
75
72
75
75
74.5
22
18
27
18
27
18
28
28
23.5
CW
Pulsed RF
CW
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
CW
* Check the status in section 3.1, as this type is not yet released for mass production. For the complete product selection please see section 3.6
Product Highlight:
Power LDMOS Transistor BLP05H6700XR(G)
The BLP05H6700XRG is a 700 W extra rugged LDMOS power transistor
optimized for broadcast, industrial, aerospace and defense applications
in the HF to 600 MHz band.
Features
• Easy power control
• Integrated dual sided ESD protection enables class C operation
and complete switch off of the transistor
• Excellent ruggedness VSWR 65 : 1
• High efficiency
• Excellent thermal stability
• Designed for broadband operation (HF to 600 MHz)
• 50 V operation for easy broadband matching
• Package available in both straight leads and gull wing form
24/7 RF - Version 2 - 2017
37
Recommended LDMOS Products for Sub-1 GHz Radar (continued)
Type
Fmin
(MHz)
Fmax
(MHz)
Freq.
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
Test signal
BLF184XR(G)
BLF578
10
10
600
500
108
108
700
1000
50
50
81.9
75
23.5
26
CW
CW
Recommended LDMOS Products for Avionics
Type
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
Test signal
BLP10H610
BLL6H0514-25
BLP10H630P
BLP10H660P
BLP10H6120P
BLA6G1011(L)-200R(G)
BLA6G1011LS-200RG
BLA8G1011L(S)-300
BLA8G1011L(S)-300G
BLA6H0912-500
BLA8H0910L(S)-500
BLA6H1011-600
BLF988(S)
BLU6H0410L(S)-600P
BLA6H0912L(S)-1000
10
500
10
10
10
1030
1030
1030
1030
960
910
1030
500
400
960
1400
1400
1000
1000
1000
1090
1090
1090
1090
1215
930
1090
1000
900
1215
10
25
30
60
120
200
200
300
300
500
500
600
600
600
1000
50
50
50
50
50
28
28
32
32
50
50
48
50
50
50
60
50
68
68
68
65
65
56
56
50
60
52
58
58
51
22
19
18
18
18
20
20
16.5
16.5
17
18
17
19.8
20
15.5
CW
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Recommended LDMOS Products for L-band Radar
Type
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
Test signal
BLP10H610
BLL8H0514-25
BLL8H0514L(S)-130
BLL6H1214P2S-250
BLL6G1214L-250
BLL8H1214L(S)-250
BLL8H1214L(S)-500
BLL9G1214L(S)-600*
10
500
500
1200
1200
1200
1200
1200
1400
1400
1400
1400
1400
1400
1400
1400
10
25
130
250
250
250
500
600
50
50
50
45
36
50
50
32
60
59
50
48
45
55
50
60
22
21
17
27
15
17
17
19
CW
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Recommended LDMOS Products for S-band Radar
Type
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
Test signal
BLS9G2735L(S)-50*
BLS7G2325L-105
BLS6G2731(S)-120
BLS6G3135(S)-120
BLS6G2731S-130
2700
2300
2700
3100
2700
3500
2500
3100
3500
3100
50
105
120
120
130
32
30
32
32
32
47
55
48
43
50
12
16.5
13.5
11
12
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
* Check the status in section 3.1, as this type is not yet released for mass production. For the complete product selection please see section 3.6
Product Highlight:
Power LDMOS transistor BLS9G2729L(S)-350
The BLS9G2729L(S)-350 is a 350 W LDMOS power transistor for S-band
applications in the frequency range from 2.7 GHz to 2.9 GHz.
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24/7 RF - Version 2 - 2017
Features
• High efficiency
• Excellent ruggedness
• Designed for S-band operations
• Excellent thermal stability
• Easy power control
• Integrated dual sided ESD protection enables excellent off-state
isolation
• High flexibility with respect to pulse formats
• Internally matched for ease of use
Type
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
Test signal
BLS6G2933S-130
BLS7G2933S-150
BLS7G2730L(S)-200P
BLS7G3135LS-200
BLS7G2729L(S)-350P
BLS9G2729L(S)-350
BLS7G3135L(S)-350P
BLS8G2731L(S)-400P
BLS9G2731L(S)-400
BLS9G2934L(S)-400
BLS9G3135L(S)-400
2900
2900
2700
3100
2700
2700
3100
2700
2700
2900
3100
3300
3300
3000
3500
2900
2900
3500
3100
3100
3400
3500
130
150
200
200
350
350
350
400
400
400
400
32
32
32
32
32
28
32
32
32
32
32
47
47
48
43
50
50
43
47
46
44
44
12.5
13.5
12
12
13
14
12
13
13
11
11
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
RF Applications
Recommended LDMOS Products for S-band Radar (continued)
Recommended GaN Product Portfolio for Radar
Type
Fmin
(MHz)
Fmax
(MHz)
Freq.
(MHz)
PL(3dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
Test signal
CLF1G0060(S)-10
CLF1G0060(S)-30
CLF1G0060(S)-10
CLF1G0060(S)-30
CLF1G0035(S)-50
CLF1G0035(S)-100P
CLF1G0035(S)-100
CLF1G0035(S)-200P
0
0
0
0
0
0
0
0
6000
6000
6000
6000
3500
3500
3500
3500
5300 to 5900
1500 to 4000
3100 to 3500
3100 to 3500
3100 to 3500
3100 to 3500
3100 to 3500
2500 to 3000
10
30
10
30
50
100
100
200
50
50
50
50
50
50
50
50
> 47
> 50
> 55
> 55
> 55
> 55
> 45
> 43
> 10
> 10
> 12
> 12
> 13
> 13
> 10
> 11
Pulsed
Pulsed
Pulsed
Pulsed
Pulsed
Pulsed
Pulsed
Pulsed
Recommended GaN Product Portfolio for Communications & ECM
Type
Fmin
(MHz)
Fmax
(MHz)
Freq.
(MHz)
PL(3dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
IMD3
Performance
Test signal
CLF1G0060(S)-10
CLF1G0060(S)-30
CLF1G0035(S)-50
CLF1G0035(S)-100P
CLF1G0035(S)-100
CLF1G0035(S)-200P
0
0
0
0
0
0
6000
6000
3500
3500
3500
3500
200 to 3200
500 to 3000
200 to 2100
2500 to 3000
500 to 2500
1700-2300
10
30
50
100
100
200
50
50
50
50
50
50
30 to 60
45 to 70
40 to 65
50 to 55
47 to 80
40 to 55
> 14
> 11
> 14
> 13
> 14
> 12
-40 dBc, PEP 5 W
-40 dBc, PEP 15 W
-40 dBc, PEP 10 W
-40 dBc, PEP 20 W
-40 dBc, PEP 20 W
-40 dBc, P≠≠≠EP 120 W
Pulsed
Pulsed
Pulsed
Pulsed
Pulsed
Pulsed
For the complete product selection please see sections 3.6 and 3.7
Product Highlight:
Power LDMOS Transistor BLA8H0910L(S)-500
The BLA8H0910L-500 and BLA8H0910LS-500 500 W LDMOS are power
transistors for avionics applications at frequencies from 900 MHz to 930
MHz. They are designed for high-power CW applications and assembled
in high performance ceramic packages.
Features
• High efficiency
• Easy power control
• Excellent ruggedness
• Integrated ESD protection
• Designed for broadband operation (900 MHz to 930 MHz)
• Internally input matched
24/7 RF - Version 2 - 2017
39
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24/7 RF - Version 2 - 2017
Driving Technologies for
Best Performance
2. Technologies
Best-in-Class LDMOS to drive any RF Power Application
LDMOS (Laterally Diffused Metal Oxide Semiconductor) is the mainstream device technology used in high-power RF
amplifiers for frequencies ranging from 10 MHz to 3.5 GHz. LDMOS offers a consistent excellent level of RF performance,
including very high ruggedness and efficiency, high gain, and compatibility with Cu based package platforms. LDMOS has
a lower cost (per unit area) compared to competing technologies (e.g. GaN) which, combined with a mature industrial base,
makes it ideal for high-power RF amplifier products with integrated matching (e.g. multiple stages, Doherty) running in high
volume production.
Ampleon’s LDMOS technology platforms are designed for devices that run from supply voltages in the range of 28 to
50 V, with outstanding efficiency, power, and ruggedness. The technology draws on Ampleon’s heritage of proven product and
technology innovation in RF, which spans over 35 years. Ampleon’s LDMOS devices deliver record performance up to 3.8 GHz
and are applied extensively by wireless network operators to realize best-in-class efficiencies for wireless base stations and
hence reduce operating costs. Our Gen10 32V LDMOS products were released to production in 2016 and have been optimized
for LTE and with 1.5 dB higher power gain and modulated power added efficiencies in the excess of 50 % at 2.1 GHz. Our first
Gen10 50V LDMOS products will be released to production in 2017 with an LTE modulated power added efficiency up to 60 %
below 1 GHz.
High Power Doherty Processes and Architectures
We achieved these high efficiencies by developing optimized LDMOS devices with specific Doherty amplifier circuit designs. Our
LDMOS process technology is developed to support Doherty amplifiers with the combination of high power, high efficiency, low
memory effects and excellent pre-distortion capabilities. Ampleon supplies Doherty amplifier circuits both as discrete transistor
products and integrated as Packaged Asymmetric Doherty (PAD) products in a single high power transistor package. These are
fully RF tested at the Doherty level to guarantee performance in the customer’s application circuit, demonstrate the strengths
of Ampleon’s LDMOS to deliver new levels of consistency in power distribution over a die, and also in production, from batch to
batch and year to year.
Broadband MMICs and Drivers
Ampleon has both broadband drivers packaged in TO270 plastic packages as well as a broad portfolio of high performance
MMIC amplifier products to simplify the overall amplifier line up. The MMICs are high efficiency 2-stage multiband amplifiers,
covering frequency ranges 0.7 - 1 GHz, 1.8 - 2.2 GHz, 2.3 - 2.7 GHz or 3.4 - 3.8 GHz, and packaged in low cost overmolded
plastic. They line-up seamlessly with the high power Doherty products or can be used as stand-alone transmit amplifiers for
lower power applications, e.g. small cells. In 2017, Ampleon is releasing a portfolio of integrated Doherty MMICs where the input
splitter and output combiner of the Doherty circuit are integrated into the MMIC package to enhance broadband performance
and minimize overall application size, targeting high efficiency drivers and 4.5G massive-MIMO applications.
24/7 RF - Version 2 - 2017
41
Technologies
2.1
Multi-Market: Higher Power Densities and Ruggedness
For the Broadcast, ISM and Aerospace & Defense markets, Ampleon has developed a family of LDMOS process platforms to
provide devices tuned to the specific needs of these applications. For example, the Gen6HV technology has been optimized for
42 to 50 V operation, and improved further as XR2, to enable devices with ruggedness on par with legacy VDMOS technology.
The Gen6XR process is essential for ISM applications which suffer from severe mismatch conditions, since Gen6XR enables
products that withstand a 1:65 mismatch ratio without compromising the RF performance, while still delivering output powers
up 1600 W CW. For broadcast applications, Ampleon offers a broad portfolio of 50 V LDMOS products that set new milestones in
terms of power density and provide a unique high efficiency solution when combined with our patented Ultra-Wideband (UWB)
Doherty technology to cover the full broadcast frequency spectrum.
Aerospace & Defense Applications
The improvements in LDMOS technology have enabled the aerospace & defense radar markets to migrate from designs using Si
bipolar power transistors to LDMOS. LDMOS RF performance is superior to Si bipolar, has a simpler application and significant
cost-of-ownership benefits in these markets. Gen6HV products provide highly efficient solutions for Avionics L-band radar
applications. Our Gen10 LDMOS has a competitive high frequency performance at 2.7 - 3.8 GHz addressing S-band radar,
supplementing a full portfolio of broadband GaN devices.
Solid State RF Energy
The promise of RF Energy is a cleaner, more efficient, and more effective power source than conventional solutions. From solid
state cooking and RF sparkplugs, to RF plasma lighting and medical therapy, to industrial cooking and drying, the possibilities for
RF Energy are nearly limitless. A radical approach is sometimes needed to break through existing limitations and this is exactly
what RF Energy offers. Ampleon has a portfolio of tailored LDMOS amplifiers to meet the requirements of individual RF Energy
applications, from solid state lighting at 433 MHz, to industrial heating at 900 MHz to consumer cooking at 2.45 GHz. Power
levels up to 1200 W are supported and complemented by a full portfolio of drivers to create the full power line-up needed in any
RF Energy application.
Benefits
• Competitive products to fit all applications covered by LDMOS
• Continuous technology improvements meet market needs
• Dedicated technology nodes designed around specific application requirements
Features
• Gen9 / 10 with enhanced VBW performance for 28 - 32 V base-station, aerospace & defense applications
• Gen8 / 9 dual stage multiband MMICs
• Gen6XR for 50 V ISM applications requiring extreme ruggedness
• Gen6 / 9HV for 50 V high power-density for broadcast
42
24/7 RF - Version 2 - 2017
2.2
Best-in-Class GaN for High Frequency Performance
With more than 35 years of experience in delivering RF power transistors, Ampleon leads the industry in offering GaN RF
power devices through a secure and reliable mainstream supply chain for wireless infrastructure, industrial, scientific and
medical (ISM), and aerospace and defense applications.
Setting New Performance Boundaries for RF Power Amplifiers
GaN products are also called High-Electron Mobility Transistors (HEMT), a name that captures one of the intrinsic benefits
of GaN – the high electron drift velocity. However, these transistors are depletion-mode devices, so they are normally on
and require a negative gate bias to switch them off. This biasing is not straightforward but Ampleon has proven bias circuitry
to support any application. A further advantage of GaN is that it is a very strong semiconductor material, so it is capable of
withstanding very high temperatures. Ampleon’s GaN transistors are specified to a maximum temperature of 250 °C, compared
to 225 °C for Si LDMOS. With such high temperature capability, there is a greater need to have packages capable of exploiting
this feature. For this, customers benefit from Ampleon’s 35-year legacy in RF power products. Simply put, GaN technology makes
a step increase in efficiency and power density performance over Si LDMOS in several applications (see figure below).
High Efficiency Doherty Architectures
Ampleon’s GaN process technology has been developed to support Doherty amplifiers with the combination of high power,
high efficiencies, low memory effects, and low pre-distortion due to trapping effects. To create high efficiency Doherty circuits,
we developed optimized GaN devices with specific impedance matching in the amplifier circuit to boost the performance. As
with our LDMOS solutions, Ampleon supplies Doherty amplifier circuits both as discrete transistor products and integrated
as packaged asymmetric Doherty (PAD) products and we are also releasing low power 30 V MMICs for higher frequency
applications.
Key Features and Benefits
GaN vs LDMOS Comparison @ 2.1 GHz
• High frequencies and bandwidth up to 6 GHz for 50 V GaN
and 12 GHz for 30 V GaN
• High efficiency and excellent linearity
• High power density
• Operation at higher temperatures, without loss of reliability
(250 °C compared to 225 °C for Si LDMOS)
• Excellent ruggedness
Applications
• Commercial wireless infrastructure (base stations)
• Radar systems and jammers
• Broadband and narrowband general-purpose amplifiers
• Public mobile radios
• ISM applications: test instrumentation and EMC testing
24/7 RF - Version 2 - 2017
43
Technologies
Ampleon’s next generation 50 V GaN process technology features best-in-class linearity while at the same time allowing
designers to maintain power, ruggedness, and efficiency. Our GaN process is being released in 2017, offering a further increase
in power density and performance at 50 V as well as a 30 V GaN node for high frequency applications. GaN technology features
best-in-class linearity while at the same time allowing designers to maintain power, ruggedness, and efficiency for both 4G and
4/5G mobile broadband applications as well as several multimarket applications. This enables an uncompromised amplifier
design that can minimize component count and reduce amplifier footprint. Our leading back-end assembly facility consistently
leverages the high power density of GaN into smaller and more broadband circuitry. Through a broad portfolio of high
performance GaN and LDMOS products, Ampleon offers an unbiased choice in enabling optimized designs for your application.
2.3
RF Power Transistor Packages
Packaging is an important element in RF power transistors, influencing both the cost-efficiency and performance of a given
device. Since peak powers can vary widely, from as low as 5 W to more than 1000 W, a range of package technologies are
needed to cover every application. The choice of package format (air-cavity or overmolded plastic), often depends on the
design requirements, and any trade-offs to be made between performance and cost.
Air-Cavity Packages
The traditional package for RF power transistors is the air-cavity package with a ceramic lid. The flange (or heatsink) material has
evolved over the years and the most commonly used material today is CPC (Cu/Mo70Cu/Cu), a laminate of Copper and Copper
Molybdenum. This material has been selected for its thermal properties, providing a low R th (compared to the Cu-W used earlier)
as well as a good CTE (Thermal Expansion Coefficient) match with the silicon or GaN used for the active dies and the internal
matching capacitors. The package is made of three parts: flange, ringframe and lid. Active and passive dies are then soldered
to the flange and wire bonds are used to create the matching circuits and the connections with the leads. The transistor is then
closed by gluing the lid on top. The final step consists of testing the product for compliance to specification.
Air-Cavity Ceramic (ACC) Packages
In a ceramic air cavity package, the flange is brazed to the ceramic ringframe at high temperatures. The resulting component
is known as a header. Air-cavity ceramic packages have proven their reliability and performance over the years and exist in a
variety of sizes and power levels. Due to the semi-hermetic nature of the ceramic air cavity packages, they are typically found in
Aerospace and Defense products as well as products requiring high reliability and high frequencies.
SOT1228A
SOT1239B
SOT1121B
SOT539A
Different ceramic packages. For a complete overview, see section 6.1
* Not drawn to scale.
ACC Package Structure
The Three Components of an ACP Transistor:
CPC flange, Polymer Ringframe, Polymer Lid
Difference in structure between a ceramic air cavity package and a plastic air cavity package
Air-Cavity Plastic (ACP) Packages
The structure of the Air Cavity Package (ACP2) is similar to ACC but the lid and the ringframe are made of an engineered
plastic instead of ceramic. The ringframe is glued to the flange rather than brazed, and reduces the stress and distortions
of the flange. This in turn allows the use of thinner matching capacitors, reducing RF losses both at the gate and the drain.
The result is higher gain and efficiency compared to the ACC format. In addition, the use of separate ringframes allows for
more variation in lead shape and length with shorter development times.
The newest generation ACP3 packages have a further key enhancement by replacing the traditional CPC flange with a Cu
flange which gives a 30 % improvement in thermal performance as well as simplifying the board level assembly to provide
a highly effective cost-efficient RF package solution. The matched CTE between the Cu flange and the copper on the
44
24/7 RF - Version 2 - 2017
application board also improves reliability.
SOT1275-1
Technologies
The ACP packages are widely used in modern basestations and RF Energy applications for their good performance and very
good price / performance ratio.
SOT1278-1
* Not drawn to scale
For the complete ACP package overview please see section 6.1
Overmolded Plastic (OMP) Packages
A third transistor package family is overmolded plastic (OMP). The package structure is similar to standard plastic power
packages, with a copper flange and a molded body, but discrete wire bonds are used in the matching network for improved RF
performance.
OMP packages have a number of outlines, from the standard HVSON (DFN) package for low power drivers, to our PQFN package
for higher power drivers, and the SOT502 format of packages for dual path MMICs, and discretes. OMP is an ideal package for
low frequency or low power applications. The usage of industry standard manufacturing equipment makes this also a very cost
effective package.
PQFN
MMIC
Driver
Discrete Final
For the complete OMP package overview please see section 6.1
The wide range of packages offered by Ampleon enables you to select the right device precisely optimized for your application
and allows to find the best compromise between cost and performance.
24/7 RF - Version 2 - 2017
45
46
24/7 RF - Version 2 - 2017
Embracing Uncounted
Applications
3. RF Product Portfolio
Ampleon Product Catalog
www.ampleon.com/products
New Products
RF Product
Portfolio
3.1
DEV = in Development
RFS = Released for Supply
Type
Application / description
Expected
status per
May 2017
Planned
release
DEV
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
DEV
RFS
RFS
RFS
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
Q3-2017
Released
Released
Released
Released
Released
Released
Released
Released
Q3-2017
Released
Released
Released
Q3-2017
Q4-2017
Q4-2017
Q4-2017
Q4-2017
Q4-2017
Q4-2017
Q4-2017
Q3-2017
Q3-2017
Q4-2017
tbd
tbd
NEW: RF Power Transistor for Base Station Applications
BLC10G18XS-320AVT
BLC10G20LS-240PWT
BLC10G22LS-240PVT
BLC8G09XS-400AVT
BLC9G15XS-400AVT
BLC9G20LS-160PV
BLC9G20XS-160AV
BLC9G20XS-400AVT
BLC9G20XS-550AVT
BLC9G21LS-60AV
BLC9G22LS-160VT
BLC9G22XS-400AVT
BLC9G24XS-170AV
BLC9G27XS-380AVT
BLC9H10XS-300P
BLC9H10XS-350A
BLC9H10XS-400A
BLC9H10XS-400P
BLC9H10XS-600A
BLC9H10XS-60P
BLC9H10XS-800P
BLF9G38-10G
BLM8D1822-25B
BLM8G1822-20B
BLM9D1822-12B
BLM9D1822-25B
320 W LDMOS power transistor for base station applications
240 W LDMOS power transistor with enhanced video bandwidth for base station applications
240 W LDMOS power transistor with enhanced video bandwidth for base station applications
400 W LDMOS packaged asymmetric Doherty power transistor for base station applications
400 W LDMOS packaged asymmetric Doherty power transistor for base station applications
160 W LDMOS power transistor with enhanced video bandwidth for base station applications
160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications
400 W LDMOS packaged asymmetric Doherty power transistor for base station applications
550 W LDMOS packaged asymmetric Doherty power transistor for base station applications
20 W plastic LDMOS transistor for base station applications
160 W LDMOS power transistor for base station applications
400 W LDMOS packaged asymmetric Doherty power transistor for base station applications
170 W LDMOS packaged asymmetrical Doherty power transistor for base station applications
380 W LDMOS power transistor for base station applications
300 W HV LDMOS power transistor for base station applications
350 W HV LDMOS power transistor for base station applications
400 W HV LDMOS power transistor for base station applications
400 W HV LDMOS power transistor for base station applications
600 W HV LDMOS power transistor for base station applications
60 W HV LDMOS power transistor for base station applications
800 W HV LDMOS power transistor for base station applications
10 W LDMOS power transistor for base station applications
25 W LDMOS 2-stage fully integrated Doherty MMIC solution for base station applications
20 W LDMOS 2-stage MMIC solution for base station applications
12 W LDMOS 2-stage fully integrated Doherty MMIC solution for base station applications
25 W LDMOS 2-stage fully integrated Doherty MMIC solution for base station applications
24/7 RF - Version 2 - 2017
47
Type
BLM9D1822S-25PB
BLM9D1822S-25PBG
BLM9D1822S-50PB
BLM9D1822S-50PBG
BLM9D18-25AB
BLM9D2325-20AB
BLM9D2327-12B
BLM9D2327-25B
BLM9D2527-20AB
BLM9G2325-20AB
BLM9G2527-20AB
BLP9G0722-20
BLP9G0722-20G
BLP9H10S-30
Application / description
25 W LDMOS 2-stage fully integrated Doherty MMIC solution for base station applications
25 W LDMOS 2-stage fully integrated Doherty MMIC solution for base station applications
50 W LDMOS 2-stage fully integrated Doherty MMIC solution for base station applications
50 W LDMOS 2-stage fully integrated Doherty MMIC solution for base station applications
25 W LDMOS 2-stage fully integrated Doherty MMIC solution for base station applications
20 W LDMOS 2-stage MMIC solution for base station applications
12 W LDMOS 2-stage MMIC solution for base station applications
20 W LDMOS 2-stage fully integrated Doherty MMIC solution
20 W LDMOS 2-stage fully integrated Doherty MMIC for massive MIMO or small cell applications
20 W LDMOS 2-stage MMIC solution for base station applications
20 W LDMOS 2-stage fully integrated Doherty MMIC solution for base station applications
20 W plastic LDMOS power transistor for base station applications
20 W plastic LDMOS power transistor for base station applications
30 W HV LDMOS power transistor for base station applications
Expected
status per
May 2017
Planned
release
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
RFS
DEV
DEV
DEV
DEV
DEV
tbd
tbd
tbd
tbd
Q4-2017
tbd
tbd
tbd
Released
tbd
Released
Released
Released
Q1-2018
RFS
RFS
RFS
RFS
RFS
DEV
DEV
DEV
DEV
RFS
RFS
RFS
DEV
DEV
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
DEV
DEV
Released
Released
Released
Released
Released
Q3-2017
Q3-2017
Q3-2017
Q3-2017
Released
Released
Released
Q3-2017
Q3-2017
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Q4-2017
Q4-2017
DEV
DEV
DEV
Q4-2017
Q4-2017
Q2-2017
DEV
DEV
DEV
DEV
Q2-2017
Q2-2017
Q2-2017
Q2-2017
DEV
DEV
tbd
tbd
RFS
RFS
RFS
RFS
Released
Released
Released
Released
NEW: RF Power LDMOS Transistors for FM/UHF/VHF/ISM and RF Energy Applications
BLC10M6XS200
BLC2425M8LS300P
BLC2425M9LS250
BLF0910H6L500
BLF0910H6LS500
BLF189XRA
BLF189XRAS
BLF189XRB
BLF189XRBS
BLF2425M9LS140
BLF888E
BLF888ES
BLF898
BLF898S
BLP05H6700XR
BLP05H6700XRG
BLP10H6120P
BLP10H6120PG
BLP10H630P
BLP10H630PG
BLP10H660P
BLP10H660PG
BLP10H690P
BLP10H690PG
BLC2425M9LS700P
BLC2425M9LS700PV
200 W LDMOS power transistor for RF lighting applications
300 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications
250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications
500 W LDMOS power transistor for industrial applications
500 W LDMOS power transistor for industrial applications
1700 W extremely rugged LDMOS power transistor for broadcast and industrial applications
1700 W extremely rugged LDMOS power transistor for broadcast and industrial applications
1900 W extremely rugged LDMOS power transistor for industrial applications
1900 W extremely rugged LDMOS power transistor for industrial applications
140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications
750 W LDMOS RF power transistor for broadcast Doherty transmitter applications
750 W LDMOS RF power transistor for broadcast Doherty transmitter applications
900 W LDMOS RF power transistor for broadcast Doherty and class AB transmitter applications
900 W LDMOS RF power transistor for broadcast Doherty and class AB transmitter applications
700 W extra rugged LDMOS power transistor optimized for broadcast, industrial, A&D applications
700 W extra rugged LDMOS power transistor optimized for broadcast, industrial, A&D applications
120 W LDMOS power transistor for broadcast and industrial applications
120 W LDMOS power transistor for broadcast and industrial applications
30 W LDMOS power transistor for broadcast and industrial applications
30 W LDMOS power transistor for broadcast and industrial applications
60 W LDMOS power transistor for broadcast and industrial applications
60 W LDMOS power transistor for broadcast and industrial applications
90 W LDMOS power transistor for broadcast and industrial applications
90 W LDMOS power transistor for broadcast and industrial applications
1200 W LDMOS power transistor for industrial applications
1200 W LDMOS power transistor for industrial applications
New: LDMOS Pallets for RF Energy Applications
BPC2425M9X2S250
BPC2425M9XS250
BPC05M9XS200
2-stage 250 W / 2.5 GHz RF Energy Pallet
1-stage 250 W / 2.5 GHz RF Energy Pallet
2-stage 200 W / 433 MHz RF Energy Pallet
New: RF Power LDMOS Transistors for Avionics Applications
BLA9G1011L-300
BLA9G1011LS-300
BLA9G1011L-300G
BLA9G1011LS-300G
300 W LDMOS power transistor for avionics applications
300 W LDMOS power transistor for avionics applications
300 W LDMOS power transistor for avionics applications
300 W LDMOS power transistor for avionics applications
New: RF Power LDMOS Transistors for L-band Applications
BLL9G1214L-600
BLL9G1214LS-600
600 W LDMOS power transistor for L-band radar applications
600 W LDMOS power transistor for L-band radar applications
New: RF Power LDMOS Transistors for S-band Applications
BLS9G2729L-350
BLS9G2729LS-350
BLS9G2731L-400
BLS9G2731LS-400
48
350 W LDMOS power transistor for S-band applications
350 W LDMOS power transistor for S-band applications
400 W LDMOS power transistor for S-band applications
400 W LDMOS power transistor for S-band applications
24/7 RF - Version 2 - 2017
Type
BLS9G2735L-50
BLS9G2735LS-50
BLS9G2934L-400
BLS9G2934LS-400
BLS9G3135L-400
BLS9G3135LS-400
Application / description
Single ended 50 W LDMOS power transistor for S-band radar applications
Single ended 50 W LDMOS power transistor for S-band radar applications
400 W LDMOS power transistor for S-band radar applications
400 W LDMOS power transistor for S-band radar applications
400 W LDMOS power transistor for S-band radar applications
400 W LDMOS power transistor for S-band radar applications
Expected
status per
May 2017
Planned
release
DEV
DEV
RFS
RFS
RFS
RFS
Q2-2017
Q2-2017
Released
Released
Released
Released
DEV
DEV
DEV
Q2-2017
Q2-2017
Q2-2017
BPS9G2934X-400
BPS9G2933X-450
BPS9G3135X-400
400 W S-band Pallet for L / S-band applications
450 W S-band Pallet for L / S-band applications
400 W S-band Pallet for L / S-band applications
RF Product
Portfolio
New: LDMOS Pallets for L / S-band Radar Applications
24/7 RF - Version 2 - 2017
49
3.2
RF Power Transistors for Mobile Broadband
RF power transistor selection guide on www.ampleon.com/products/mobile-broadband
Easy-to-use parametric filters help you choose the right RF power transistor for your design
Device Naming Conventions for Mobile Broadband (applicable to Gen7 onwards)
B L C 10 G
F
LS P1dB A B G V T
Italic = Optional
T = video decoupling capacitor inside
V = V-leads for external decoupling
W = Supply thru decoupling leads
Gullwing-shaped leads
Current sense lead
A = Asymmetric doherty (PAD); asymmetric integrated Doherty
P = Symmetric doherty - push-pull configuration
P1dB power level @ supply voltage of Datasheet; PAD = P3dB
None:
PQFN
LS:
ACC / ACP2
Low Rth (CPC flange)
S:
OMP / TO270
XS:
ACP3
Extremely low Rth (CU flange)
Frequency, example 22 = 2200 MHz, 1822 = 1800 to 2200 MHz
G: 28-32 V supply voltage
D: Integrated Doherty (28 V)
H: 50 V supply voltage
U: 12 V supply voltage
Technology generation
F: Ceramic package
C: Air-cavity plastic (ACP) package
M: MMIC
P: Overmolded plastic (OMP) package
L: High-frequency power transistor
B: Semiconductor die made of Si
C: Semiconductor die made of GaN
3.2.1
0.4 - 1.0 GHz LDMOS Transistors
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
PL(AV)
(W)
Test signal
BLP7G22-05
BLP8G27-5
BLP7G22-10
BLP8G27-10
BLM8G0710S-15PB
BLM8G0710S-15PBG
BLM8G0710S-30PB
BLM8G0710S-30PBG
BLP9H10S-30*
BLM8G0710S-45AB
BLM8G0710S-45ABG
BLP8G10S-45P
BLP8G10S-45PG
BLM8G0710S-60PB
BLM8G0710S-60PBG
BLC9H10XS-60P*
BLF8G10L-160
SOT1179-2
SOT1371-1
SOT1179-2
SOT1371-1
SOT1211-2
SOT1212-2
SOT1211-2
SOT1212-2
SOT1482
SOT1211-2
SOT1212-2
SOT1223-2
SOT1224-2
SOT1211-2
SOT1212-2
SOT1273-7
SOT502A
700
700
700
700
700
700
700
700
700
700
700
700
700
700
700
700
920
2700
2700
2700
2700
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
960
5
5
10
10
15 (1)
15 (1)
30 (1)
30 (1)
30
45 (1)
45 (1)
45
45
60 (1)
60 (1)
60 (1)
160
28
28
28
28
28
28
28
28
50
28
28
28
28
28
28
50
30
23
19
25
22
27
27
24
24
tbd
23.4
23.4
19.8
19.8
23.4
23.4
tbd
29
16
19
17.4
17
36
36
35.7
35.7
tbd
35.6
35.6
20.8
20.8
35.6
35.6
tbd
19.7
1
0.3
2
2
1.5
1.5
3
3
tbd
6
6
2.5
2.5
6
6
tbd
35
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
tbd
1-c W-CDMA
1-c W-CDMA
2-c W-CDMA
2-c W-CDMA
1-c W-CDMA
1-c W-CDMA
tbd
2-c W-CDMA
(1)
P3dB
* Check status in section 3.1, as this type is not yet released for mass production
50
24/7 RF - Version 2 - 2017
0.4 - 1.0 GHz LDMOS Transistors (continued)
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
PL(AV)
(W)
Test signal
BLF8G10LS-160
BLF8G10LS-160V
BLP8G05S-200
BLP8G05S-200G
BLF7G10LS-250
BLF8G09LS-270W
BLF8G09LS-270GW
BLF8G10LS-270GV
BLF8G10LS-270
BLF8G10LS-270V
BLP8G10S-270PW
BLF8G10LS-300P
BLC9H10XS-300P*
BLC9H10XS-350A*
BLC9H10XS-400A*
BLC8G09XS-400AVT
BLF8G09LS-400PW
BLF8G09LS-400PGW
BLC9H10XS-400P*
BLC9H10XS-600A*
BLC9H10XS-800P*
SOT502B
SOT1244B
SOT1138-2
SOT1204-2
SOT502B
SOT1244B
SOT1244C
SOT1244C
SOT502B
SOT1244B
SOT1221-2
SOT539B
SOT1273-7
SOT1273-7
SOT1273-7
SOT1258-7
SOT1242B
SOT1242C
SOT1273-7
SOT1250-1
SOT1252-7
920
925
400
400
920
716
716
790
820
790
700
700
700
600
700
859
716
716
700
700
700
960
960
500
500
960
960
960
960
960
960
900
1000
1000
1000
1000
960
960
960
1000
1000
1000
160
160
200
200
250
270
270
270
270
270
270
300
300 (1)
350 (1)
400 (1)
400 (1)
400
400
400 (1)
600 (1)
800 (1)
30
30
28
28
30
28
28
28
28
28
28
28
50
50
50
32
28
28
50
50
50
29
30
77
77
30.5
33
33
31
33
31
46
32
tbd
tbd
tbd
47.5
30
30
tbd
tbd
tbd
19.7
19.9
21
21
19.5
20
20
19.5
18.5
19.5
17.3
20.5
tbd
tbd
tbd
17.4
20.6
20.6
tbd
tbd
tbd
35
35
210
210
60
67
67
67
67
67
56
65
tbd
tbd
tbd
93
95
95
tbd
tbd
tbd
2-c W-CDMA
2-c W-CDMA
CW
CW
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
1-c W-CDMA
2-c W-CDMA
tbd
tbd
tbd
1-c W-CDMA
2-c W-CDMA
2-c W-CDMA
tbd
tbd
tbd
3.2.2
1.3 - 1.7 GHz LDMOS Transistors
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
PL(AV)
(W)
Test signal
BLP7G22-05
BLP8G27-5
BLP7G22-10
BLP8G27-10
BLC9G15LS-400AVT
BLC9G15XS-400AVT
SOT1179-2
SOT1371-1
SOT1179-2
SOT1371-1
SOT1258-3
SOT1258-7
700
700
700
700
1452
1452
2700
2700
2700
2700
1511
1511
5
5
10
10
400 (1)
400 (1)
28
28
28
28
32(1)
32(1)
23
19
25
22
51
48
16
19
17.4
17
16.2
16.5
1
0.3
2
2
93
93
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
1-c W-CDMA
1-c W-CDMA
3.2.3
RF Product
Portfolio
3.2.1
1.8 - 2.0 GHz LDMOS Transistors
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
PL(AV)
(W)
Test signal
BLP7G22-05
BLP8G27-5
BLP7G22-10
BLP8G27-10
BLP9G0722-20
BLP9G0722-20G
BLM8G1822-20B*
BLM7G1822S-20PB
BLM7G1822S-20PBG
BLM8D1822-25B*
BLM7G1822S-40AB
BLM7G1822S-40PB
BLM7G1822S-40PBG
BLM8D1822S-50PB
BLM8D1822S-50PBG
BLC9G21LS-60AV*
BLM7G1822S-80AB
BLM7G1822S-80ABG
BLM7G1822S-80PB
BLM7G1822S-80PBG
BLC9G20LS-120V
BLF8G20LS-160V
SOT1179-2
SOT1371-1
SOT1179-2
SOT1371-1
SOT1482-1
SOT1483-1
SOT1462-3
SOT1211-1
SOT1212-1
SOT1462-1
SOT1211-2
SOT1211-1
SOT1212-1
SOT1211-2
SOT1212-2
SOT1275-3
SOT1211-1
SOT1212-1
SOT1211-2
SOT1212-2
SOT1275-3
SOT1239B
700
700
700
700
400
400
1800
1805
1805
1800
1805
1805
1805
1805
1805
1800
1805
1805
1805
1805
1805
1800
2700
2700
2700
2700
2700
2700
2200
2170
2170
2200
2170
2170
2170
2170
2170
2025
2170
2170
2170
2170
1995
2000
5
5
10
10
20
20
20 (1)
20 (1)
20 (1)
25 (1)
40 (1)
40 (1)
40 (1)
50 (1)
50 (1)
60 (1)
80 (1)
80 (1)
80 (1)
80 (1)
120 (1)
160
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
23
19
25
22
21
21
tbd
23
23
tbd
25.5
25
25
37
37
tbd
24
24
24
24
31
34
16
19
17.4
17
19
19
tbd
32.3
32.3
tbd
31.3
31.5
31
26.5
26.5
tbd
28.3
28.3
28
28
19.2
20
1
0.3
2
2
35
35
tbd
2
2
tbd
2
4
4
5
5
tbd
8
8
8
8
30
35.5
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
1-c W-CDMA
1-c W-CDMA
tbd
1-c W-CDMA
1-c W-CDMA
tbd
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
tbd
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
2-c W-CDMA
2-c W-CDMA
P3dB
* Check status in section 3.1, as this type is not yet released for mass production
(1)
24/7 RF - Version 2 - 2017
51
3.2.3
1.8 - 2.0 GHz LDMOS Transistors (continued)
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
PL(AV)
(W)
Test signal
BLC9G20XS-160AV
BLC9G20LS-160PV
BLC8G21LS-160AV
BLF9G20LS-160V
BLF8G19LS-170BV
BLF7G20LS-200
BLF8G20LS-220
BLF8G20LS-230V
BLC9G20LS-240PV
BLC10G20LS-240PWT
BLF7G20LS-250P
BLC8G20LS-310AV
BLC10G18XS-320AVT*
BLC9G20LS-361AVT
BLC8G20LS-400AV
BLF8G20LS-400PV
BLF8G20LS-400PGV
BLC9G20XS-400AVT
BLC9G20LS-470AVT
BLC9G20XS-550AVT
SOT1275-3
SOT1275-1
SOT1275-1
SOT1120B
SOT1120B
SOT502B
SOT502B
SOT1239B
SOT1275-3
SOT1275-3
SOT539B
SOT1258-3
SOT1258-7
SOT1258-3
SOT1258-3
SOT1242B
SOT1242C
SOT1258-7
SOT1258-3
SOT1258-7
1805
1805
1805
1800
1800
1805
1800
1800
1805
1805
1805
1900
1800
1805
1800
1805
1805
1805
1805
1805
1880
2000
2025
2000
1990
1990
2000
2000
1995
1995
1880
2000
1900
1990
2000
1995
1995
1880
1990
1880
(1)
160
160 (1)
160 (1)
160
170
200
220
230
240 (1)
240 (1)
250
310 (1)
320 (1)
360 (1)
400 (1)
400
400
400 (1)
470 (1)
550 (1)
30
28
28
28
32
28
28
28
28
28
28
28
32
28
32
28
28
32
28
28
47
34.5
45
33.5
32
33
34
31.7
30
30
35
42.5
tbd
47.5
44
28
28
45
47.5
44.5
16.6
19.8
15
19.8
18
18
18.9
18
18
19.3
18
16.9
tbd
15.7
15.5
19
19
16.2
15.7
15.4
28
38
22.5
35.5
60
55
55
55
60
60
70
56
tbd
56.2
85
95
95
87
80
85
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
1-c W-CDMA
tbd
1-c W-CDMA
1-c W-CDMA
2-c W-CDMA
2-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
3.2.4
2.0 - 2.2 GHz LDMOS Transistors
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
PL(AV)
(W)
Test signal
BLP7G22-05
BLP8G27-5
BLP7G22-10
BLP8G27-10
BLM7G1822S-20PB
BLM7G1822S-20PBG
BLM7G1822S-40ABG
BLM7G1822S-40PB
BLM7G1822S-40AB
BLM7G1822S-40PBG
BLM7G1822S-80ABG
BLM7G1822S-80PBG
BLM7G1822S-80AB
BLM7G1822S-80PB
BLF8G22LS-140
BLP8G21S-160PV
BLC8G21LS-160AV
BLC9G22LS-160VT
BLF7G22LS-200
BLF8G22LS-200V
BLF8G22LS-200GV
BLF8G22LS-205V
BLF8G22LS-220
BLF8G22LS-240
BLC10G22LS-240PVT
BLF7G22LS-250P
BLF8G22LS-270
BLF8G22LS-270GV
BLF8G22LS-270V
BLC9G22XS-400AVT
BLC8G22LS-450AV
SOT1179-2
SOT1371-1
SOT1179-2
SOT1371-1
SOT1211-1
SOT1212-1
SOT1212-2
SOT1211-1
SOT1211-2
SOT1212-1
SOT1212-1
SOT1212-2
SOT1211-1
SOT1211-2
SOT502B
SOT1221-2
SOT1275-1
SOT1271-3
SOT502B
SOT1244B
SOT1244C
SOT1239B
SOT502B
SOT502B
SOT1275-3
SOT539B
SOT502B
SOT1244C
SOT1244B
SOT1258-7
SOT1258-3
700
700
700
700
1805
1805
1805
1805
1805
1805
1805
1805
1805
1805
2000
1880
1805
2110
2110
2110
2110
2100
2110
2110
2110
2110
2110
2110
2110
2110
2110
2700
2700
2700
2700
2170
2170
2170
2170
2170
2170
2170
2170
2170
2170
2200
2025
2025
2170
2170
2170
2170
2200
2170
2170
2220
2170
2170
2170
2170
2200
2170
5
5
10
10
20 (1)
20 (1)
40 (1)
40 (1)
40 (1)
40 (1)
80 (1)
80 (1)
80 (1)
80 (1)
140
160
160 (1)
160 (1)
200
200
200
205
220
240
240 (1)
250
270
270
270
400 (1)
450 (1)
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
32
28
23
19
25
22
23
23
25.5
25
25.5
25
24
24
24
24
32.5
31
45
33
31
29
29
32.5
33
28.5
30
31
30
29
29
45
41
16
19
17.4
17
32.3
32.3
31.3
31.5
31.3
31
28.3
28
28.3
28
18.5
17.5
15
18.4
18.5
19
19
18.3
17
19
19.7
18.5
17.7
17.3
17.3
15.3
14
1
0.3
2
2
2
2
4
4
4
4
8
8
8
8
33
20
22.5
35
55
55
55
50.1
55
55
60
70
80
80
80
93
85
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
2-c W-CDMA
2-c W-CDMA
1-c W-CDMA
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
1-c W-CDMA
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
1-c W-CDMA
1-c W-CDMA
P3dB
* Check status in section 3.1, as this type is not yet released for mass production
(1)
52
24/7 RF - Version 2 - 2017
2.3 - 2.4 GHz LDMOS Transistors
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
PL(AV)
(W)
Test signal
BLP7G22-05
BLP8G27-5
BLP8G27-10
BLM9D2325-20AB*
BLM9D2327-25B*
BLF6G27LS-40P
BLF6G27LS-40PG
BLC8G27LS-60AV
BLF8G24LS-100V
BLF8G24LS-100GV
BLF7G24LS-100
BLF7G24LS-140
BLF8G24LS-150V
BLF8G24LS-150GV
BLC9G24XS-170AV
BLC8G24LS-241AV
SOT1179-2
SOT1371-1
SOT1371-1
SOT1462-1
SOT1462-1
SOT1121B
SOT1121E
SOT1275-3
SOT1244B
SOT1244C
SOT502B
SOT502B
SOT1244B
SOT1244C
SOT1275-3
SOT1252-1
700
700
700
2300
2300
2500
2500
2300
2300
2300
2300
2300
2300
2300
2300
2300
2700
2700
2700
2500
2700
2700
2700
2690
2400
2400
2400
2400
2400
2400
2400
2400
5
5
10
20 (1)
25 (1)
40
40
60 (1)
100
100
100
140
150
150
170 (1)
240 (1)
28
28
28
28
28
28
28
28
28
28
28
28
28
28
30
28
23
19
22
tbd
tbd
37
37
44
32
32
27
26.5
33
33
47
43
16
19
17
tbd
tbd
17.5
17.5
15
19
19
18
18.5
19
19
15.5
14.5
1
0.3
2
tbd
tbd
20
20
7
25
25
20
30
45
45
28
56
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
tbd
tbd
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
2-c W-CDMA
2-c W-CDMA
NCDMA/IS95
NCDMA/IS95
2-c W-CDMA
2-c W-CDMA
1-c W-CDMA
1-c W-CDMA
3.2.6
2.5 - 2.7 GHz LDMOS Transistors
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
PL(AV)
(W)
Test signal
BLP7G22-05
BLP8G27-5
BLP8G27-10
BLM9D2527-20AB
BLM9D2327-25B*
BLC8G27LS-60AV
BLF7G27LS-100
BLF8G27LS-100GV
BLF8G27LS-100
BLF8G27LS-100V
BLC8G27LS-100AV
BLF7G27LS-140
BLF8G27LS-140
BLF8G27LS-140V
BLC8G27LS-140AV
BLF8G27LS-150V
BLF8G27LS-150GV
BLC9G27LS-151AV
BLC8G27LS-160AV
BLC8G27LS-180AV
BLC8G27LS-210PV
BLC8G27LS-240AV
BLC9G27XS-380AVT*
SOT1179-2
SOT1371-1
SOT1371-1
SOT1462-1
SOT1462-1
SOT1275-3
SOT502B
SOT1244C
SOT502B
SOT1244B
SOT1275-1
SOT502B
SOT502B
SOT1120B
SOT1275-1
SOT1244B
SOT1244C
SOT1275-3
SOT1275-1
SOT1275-3
SOT1251-3
SOT1252-1
SOT1258-7
700
700
700
2500
2300
2300
2500
2500
2500
2500
2496
2500
2500
2600
2496
2500
2500
2496
2496
2496
2500
2500
2500
2700
2700
2700
2700
2700
2690
2700
2700
2700
2700
2690
2700
2700
2700
2690
2700
2700
2690
2690
2690
2700
2700
2700
5
5
10
20 (1)
25 (1)
60 (1)
100
100
100
100
100 (1)
140
140
140
140 (1)
150
150
150 (1)
160 (1)
180 (1)
200 (1)
240 (1)
380 (1)
28
28
28
28
28
28
28
28
28
28
28
28
32
32
28
28
28
28
28
28
28
28
32
23
19
22
43
tbd
44
28
28
28
28
44
22
32
30
43
30
30
46
41
43.5
30
37
tbd
16
19
17
28
tbd
15
18
17
17
17
15.5
16.5
17.4
17.4
14.5
18
18
15.6
14.3
14
17
14
tbd
1
0.3
2
3
tbd
7
20
25
25
25
17.8
30
45
45
28
45
45
28
31.6
28
65
56
tbd
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
1-c W-CDMA
tbd
1-c W-CDMA
NCDMA/IS95
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
1-c W-CDMA
NCDMA/IS95
2-c W-CDMA
2-c W-CDMA
1-c W-CDMA
2-c W-CDMA
2-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
2-c W-CDMA
1-c W-CDMA
tbd
3.2.7
RF Product
Portfolio
3.2.5
3.4 - 3.8 GHz LDMOS Transistors
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
PL(AV)
(W)
Test signal
BLF9G38-10G*
BLF6G38S-25
BLF6G38LS-50
BLF8G38LS-75V
BLF9G38LS-90P
SOT975C
SOT608B
SOT502B
SOT1239B
SOT1121B
3400
3400
3400
3400
3400
3800
3800
3800
3800
3600
10
25
50
75
90
28
28
28
30
28
tbd
24
23
26
28
tbd
15
14
15.5
15
tbd
4.5
9
20
20
tbd
NCDMA/IS95
NCDMA/IS95
1-c W-CDMA
1-c W-CDMA
P3dB
* Check status in section 3.1, as this type is not yet released for mass production
(1)
24/7 RF - Version 2 - 2017
53
3.2.8
LDMOS Doherty Designs
Frequency band
(MHz)
PPEAK
(dBm)
POUT-AVG
(dBm)
462 - 468 MHz
462-468
56
617-652 MHz
617-652
54.8
716 - 768 MHz
716 - 768
56
758 - 803 MHz
758 - 803
55.6
728 - 821 MHz
728 - 768
48.3
790 - 821
55.7
728 - 768
56
717 - 960 MHz
717 - 960
tbd
869 - 960 MHz
869 - 895
47.5
869 - 895
58.5
869 - 895
59.9
925 - 960
46
925 - 960
47.4
920 - 960
55.2
920 - 960
56.4
925 - 960
56.3
920 - 960
57.1
920 - 960
57.1
920 - 960
57.3
1476 - 1555 MHz
1452 - 1501
56.2
1452 - 1501
56.2
1805 - 1880 MHz (DCS)
1805 - 1880
45 (dual)
1805 - 2025
52.9
1805 - 1880
56.2
1805 - 1880
56.2
1805 - 1880
57.3
1805 - 1880
56
1805 - 1880
56.5
1805 - 1880
57.5
1805 - 1880
56.6
1805 - 1880
57.6
1805 - 1880
58.3
1805 - 1880
58.2
1930 - 1990 MHz (PCS)
1930 - 1990
57.3
1930 - 1990
56.1
1930 - 1990
58.5
1805 - 2025 MHz (TD-SCDMA)
1805-2025
52.9
2110 - 2170 MHz (UMTS / LTE)
2110 - 2170
45 (dual)
2113 - 2170
52.6
2110 - 2170
55.6
2112 - 2170
56.2
2110 - 2170
57.6
2110- 2170
58
2110 - 2200
58.5
2300 - 2400 MHz (LTE)
2300 - 2400
47
2300 - 2400
50.4
2300 - 2400
52.6
2300 - 2400
56
54
VDS
(V)
Gp
(dB)
ηD
(%)
Type
Main transistor
Peak transistor
48.5
28
18.7
51.5
SYM
BLP8G05S-200
BLP8G05S-200
47.5
24
17.8
53.7
SYM
BLP8G10S-270PW
47.5
28
18.1
48.6
SYM
BLP8G10S-270PW
48.4
28
17.8
47
SYM
BLF8G10LS-160
41
47.9
47.7
28
28
28
19
19.3
19.4
45
44
44
SYM
SYM
SYM
BLP8G10S-45P
BLF8G10L-300P
BLF8G10L-300P
tbd
50
tbd
tbd
SYM
BLC9H10XS-400P
39.2
50.5
52
35.5
39.4
48
49.3
48.4
49
49
49.3
28
28
28
30
28
30
28
28
30
28
30
18
16.4
15.2
20
18
16.9
15.1
16
16.1
15
16
47
49
48
38
47.3
46.3
47
48.2
46.7
48
50
SYM
SYM
ASYM
SYM
SYM
SYM
SYM
ASYM
ASYM
ASYM
ASYM
BLP8G10S-45P
BLF8G10LS-270
BLF8G10LS-270
BLP7G22-10
BLP8G10S-45P
BLF8G10LS-160V
BLF8G09LS-400PW
BLC8G09LS-400AW
BLF8G10LS-160
BLF8G10LS-160
BLF8G10LS-160
47.5
47.5
28
28
18
18
50.1
50.1
ASYM
ASYM
BLC9G15XS-400AVT
BLC9G15LS-400AVT
37
44.5
49.3
49
50.5
47.8
49.2
49.7
49
50
50
50.5
28
28
28
28
30
28
28
32
28
28
30
28
26
15.8
15
15
17
16.6
16.3
15.5
15
15.5
15.3
14.2
37
50.6
47.5
52.3
50
50.1
49.8
47
50.3
48
50
50
SYM ID
ASYM
SYM
ASYM
ASYM
ASYM
ASYM
ASYM
ASYM 3W
ASYM
ASYM 3W
ASYM
BLM8D1822S-50PB(G)
BLC8G21LS-160AV
BLF8G20LS-200V
BLF8G19LS-170BV
BLF8G20LS-220
BLC9G20LS-361AVT
BLC9G20LS-470AVT
BLC9G20XS-400AVT
BLC9G20LS-160V
BLC9G20XS-550AVT
BLC9G20LS-160V
BLF8G20LS-220
BLC9G20LS-470AVT peak 1 and peak 2
2x BLF8G20LS-220
50.5
47.5
50.7
30
28
32
17
16.4
15.9
50
50
44
ASYM
3WAY
3WAY
BLF8G20LS-220
BLC9G20LS-120V
BLF8G19LS-170BV
BLF8G20LS-220
BLC9G20LS-240PV peak1 and peak 2
2x BLF8G19LS-170BV
44.5
28
15.8
50.6
ASYM
BLC8G21LS-160AV
37
44.5
49
48.4
50
50
50.5
28
28
28
28
28
28
28
26
16.4
15
14.2
17.2
15
14
37
48.2
52
46.5
40
52
46
SYM ID
ASYM
ASYM
ASYM
SYM
ASYM
SYM 3W
BLM8D1822S-50PB(G)
BLC8G21LS-160AV
BLF8G22LS-140
BLC9G22XS-400AVT
BLF8G22LS-200V
BLC9G22LS-160V
BLC9G22LS-120VT
38.5
42
44.5
48
26
27
28
28
14.2
15.2
15.5
15
48.5
47.3
47
46
ASYM
ASYM
ASYM
ASYM
BLC8G27LS-60AV
BLC8G27LS-100AV
BLC9G27XS-170AV
BLC8G24LS-241AV
24/7 RF - Version 2 - 2017
BLF8G10LS-160
BLF8G10LS-270
2x BLF8G10LS-270
BLP7G22-10
BLF8G10LS-160V
BLC8G09LS-400AW
BLF7G10LS-250
2x BLF8G10LS-160
BLF7G10LS-250
BLF8G20LS-200V
BLF8G20LS-220
BLF8G20LS-220
BLC9G20LS-361AVT peak 1 and peak 2
BLF8G22LS-220
BLF8G22LS-200V
BLC9G22XS400AVT
BLC9G22LS-240VT peak 1 and peak2
LDMOS Doherty Designs (continued)
Frequency band
(MHz)
PPEAK
(dBm)
2500 - 2700 MHz (LTE)
2530 - 2630
53
2620 - 2690
57.5
2545 - 2660
54
2620 - 2690
56.2
2496 - 2690
47.5
2496 - 2690
50.5
2496 - 2690
52.3
2496 - 2690
57.6
3300 - 3800 MHz (TDD-LTE)
3550 - 3700
43.5
3400 - 3600
50.3
3400 - 3700
52
3.2.9
POUT-AVG
(dBm)
VDS
(V)
Gp
(dB)
ηD
(%)
Type
Main transistor
45
48
46.5
48
39.5
41.5
44.5
49.7
28
28
28
32
26
28
28
30
14
13
15.2
15.2
14.5
15.5
15
14.5
43
37
45
39.1
50
42
50
37.5
ASYM
ASYM
SYM
SYM
ASYM
ASYM
ASYM
ASYM
BLC8G27LS-160AV
BLF8G27LS-140G
BLF8G27LS-100V
BLF8G27LS-140V
BLC8G27LS-60AV
BLC8G27LS-100AV
BLC9G27LS-151AV
BLC8G27LS-210PV
36
42.5
44.5
30
28
28
15
13.3
12.5
37
38
35
SYM
SYM
SYM
BLF9G38LS-10G
BLF9G38LS-90P
BLF8G38LS-75V
Peak transistor
2x BLF8G27LS-140G
BLF8G27LS-100V
BLF8G27LS-140V
BLF8G27LS-150V peak 1 and peak 2
BLF9G38LS-10G
BLF8G38LS-75V
Single Package Asymmetric Doherty (PAD) LDMOS Transistors
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
PL(AV)
(W)
Test signal
BLC8G27LS-60AV
BLC9G21LS-60AV*
BLC8G27LS-100AV
BLC8G27LS-140AV
BLC9G27LS-151AV
BLC9G20XS-160AV
BLC8G21LS-160AV
BLC8G27LS-160AV
BLC9G24XS-170AV
BLC8G27LS-180AV
BLC8G24LS-241AV
BLC8G27LS-240AV
BLC8G20LS-310AV
BLC9G20LS-361AVT
BLC9G27XS-380AVT*
BLC8G09XS-400AVT
BLC9G15LS-400AVT
BLC8G20LS-400AV
BLC9G20XS-400AVT
BLC9G22XS-400AVT
BLC8G22LS-450AV
BLC9G20LS-470AVT
BLC9G20XS-550AVT
BLC10G18XS-320AVT*
SOT1275-3
SOT1275-3
SOT1275-1
SOT1275-1
SOT1275-3
SOT1275-3
SOT1275-1
SOT1275-1
SOT1275-3
SOT1275-3
SOT1252-1
SOT1252-1
SOT1258-3
SOT1258-3
SOT1258-7
SOT1258-7
SOT1258-3
SOT1258-3
SOT1258-7
SOT1258-7
SOT1258-3
SOT1258-3
SOT1258-7
SOT1258-7
2300
1800
2496
2496
2496
1805
1805
2496
2300
2496
2300
2500
1900
1805
2500
859
1452
1800
1805
2110
2110
1805
1805
1800
2690
2025
2690
2690
2690
1880
2025
2690
2400
2690
2400
2700
2000
1990
2700
960
1511
2000
1880
2200
2170
1990
1880
1900
60
60 (1)
100 (1)
140 (1)
150 (1)
160 (1)
160 (1)
160 (1)
170 (1)
180 (1)
240 (1)
240 (1)
310 (1)
360 (1)
380 (1)
400 (1)
400 (1)
400 (1)
400 (1)
400 (1)
450 (1)
470 (1)
550 (1)
320 (1)
28
28
28
28
28
30
28
28
30
28
28
28
28
28
32
32
32
32
32
32
28
28
28
32
44
tbd
44
43
46
47
45
41
47
43.5
43
37
42.5
47.5
tbd
47.5
51
44
45
45
41
47.5
44.5
tbd
15
tbd
15.5
14.5
15.6
16.6
15
14.3
15.5
14
14.5
14
16.9
15.7
tbd
17.4
16.2
15.5
16.2
15.3
14
15.7
15.4
tbd
7
tbd
17.8
28
28
28
22.5
31.6
28
28
56
56
56
56.2
tbd
93
93
85
87
93
85
80
85
tbd
1-c W-CDMA
tbd
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
tbd
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
tbd
(1)
RF Product
Portfolio
3.2.8
3.2.10 Overmolded Plastic (OMP) LDMOS Transistors
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
PL(AV)
(W)
Test signal
BLP9G0722-20
BLP9G0722-20G
BLP8G10S-45PG
BLP8G10S-45P
BLP8G05S-200
BLP8G05S-200G
BLP8G10S-270PW
SOT1482-1
SOT1483-1
SOT1224-2
SOT1223-2
SOT1138-2
SOT1204-2
SOT1221-2
400
400
700
700
400
400
700
2700
2700
1000
1000
500
500
900
20
20
45
45
200
200
270
28
28
28
28
28
28
28
21
21
19.8
19.8
77
77
46
19
19
20.8
20.8
21
21
17.3
35
35
2.5
2.5
210
210
56
1-c W-CDMA
1-c W-CDMA
2-c W-CDMA
2-c W-CDMA
CW
CW
1-c W-CDMA
P3dB
* Check status in section 3.1, as this type is not yet released for mass production
(1)
24/7 RF - Version 2 - 2017
55
3.2.11 MMIC LDMOS Transistors
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
PL(AV)
(W)
Test signal
BLM8G0710S-15PB
BLM8G0710S-15PBG
BLM7G1822S-20PB
BLM7G1822S-20PBG
BLM9D2325-20AB*
BLM9D2527-20AB
BLM8D1822-25B*
BLM9D2327-25B*
BLM8G0710S-30PB
BLM8G0710S-30PBG
BLM7G1822S-40ABG
BLM7G1822S-40PB
BLM7G1822S-40AB
BLM7G1822S-40PBG
BLM8G0710S-45AB
BLM8G0710S-45ABG
BLM8D1822S-50PB
BLM8D1822S-50PBG
BLM8G0710S-60PB
BLM8G0710S-60PBG
BLM7G1822S-80ABG
BLM7G1822S-80PBG
BLM7G1822S-80AB
BLM7G1822S-80PB
SOT1211-2
SOT1212-2
SOT1211-1
SOT1212-1
SOT1462-1
SOT1462-1
SOT1462-1
SOT1462-1
SOT1211-2
SOT1212-2
SOT1212-2
SOT1211-1
SOT1211-2
SOT1212-1
SOT1211-2
SOT1212-2
SOT1211-2
SOT1212-2
SOT1211-2
SOT1212-2
SOT1212-1
SOT1212-2
SOT1211-1
SOT1211-2
700
700
1805
1805
2300
2500
1800
2300
700
700
1805
1805
1805
1805
700
700
1805
1805
700
700
1805
1805
1805
1805
1000
1000
2170
2170
2500
2700
2200
2700
1000
1000
2170
2170
2170
2170
1000
1000
2170
2170
1000
1000
2170
2170
2170
2170
15
15 (1)
20 (1)
20 (1)
20 (1)
20 (1)
25 (1)
25 (1)
30 (1)
30 (1)
40 (1)
40 (1)
40 (1)
40 (1)
45 (1)
45 (1)
50 (1)
50 (1)
60 (1)
60 (1)
80 (1)
80 (1)
80 (1)
80 (1)
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
27
27
23
23
tbd
43
tbd
tbd
24
24
25.5
25
25.5
25.5
23.4
23.4
37
37
23.4
23.4
24
24
24
24
36
36
32.3
32.3
tbd
28
tbd
tbd
35.7
35.7
31.3
31.5
31.3
31.3
35.6
35.6
26.5
26.5
35.6
35.6
28.3
28
28.3
28
1.5
1.5
2
2
tbd
3
tbd
tbd
3
3
4
4
4
4
3
3
5
5
6
6
8
8
8
8
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
tbd
1-c W-CDMA
tbd
tbd
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
(1)
3.2.12 Small Cell LDMOS Transistors
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
PL(AV)
(W)
Test signal
BLP7G22-05
BLP8G27-5
BLP7G22-10
BLP8G27-10
BLF9G38-10G*
BLM8G0710S-15PB
BLM8G0710S-15PBG
BLP9G0722-20
BLP9G0722-20G
BLM8G1822-20B*
BLM7G1822S-20PB
BLM7G1822S-20PBG
BLM9D2325-20AB*
BLM9D2527-20AB
BLM8D1822-25B*
BLM9D2327-25B*
BLM8G0710S-30PB
BLM8G0710S-30PBG
BLM7G1822S-40ABG
BLM7G1822S-40PB
BLM7G1822S-40AB
BLM7G1822S-40PBG
BLM8G0710S-45AB
BLM8G0710S-45ABG
BLP8G10S-45P
BLP8G10S-45PG
BLM8D1822S-50PBG
BLM8D1822S-50PB
BLC9G21LS-60AV*
BLM8G0710S-60PB
BLC8G27LS-60AV
BLM7G1822S-80ABG
SOT1179-2
SOT1371-1
SOT1179-2
SOT1371-1
SOT975C
SOT1211-2
SOT1212-2
SOT1482-1
SOT1483-1
SOT1462-3
SOT1211-1
SOT1212-1
SOT1462-1
SOT1462-1
SOT1462-1
SOT1462-1
SOT1211-2
SOT1212-2
SOT1212-2
SOT1211-1
SOT1211-2
SOT1212-1
SOT1211-2
SOT1212-2
SOT1223-2
SOT1224-2
SOT1212-2
SOT1211-2
SOT1275-3
SOT1211-2
SOT1275-3
SOT1212-1
700
700
700
700
3400
700
700
400
400
1800
1805
1805
2300
2500
1800
2300
700
700
1805
1805
1805
1805
700
700
700
700
1805
1805
1800
700
2300
1805
2700
2700
2700
2700
3800
1000
1000
2700
2700
2200
2170
2170
2500
2700
2200
2700
1000
1000
2170
2170
2170
2170
1000
1000
1000
1000
2170
2170
2025
1000
2690
2170
5
5
10
10
10
15 (1)
15 (1)
20
20
20 (1)
20 (1)
20 (1)
20 (1)
20 (1)
25 (1)
25 (1)
30 (1)
30 (1)
40 (1)
40 (1)
40 (1)
40 (1)
45 (1)
45 (1)
45
45
50 (1)
50 (1)
60 (1)
60 (1)
60 (1)
80 (1)
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
28
23
19
25
22
tbd
27
27
21
21
tbd
23
23
tbd
43
tbd
tbd
24
24
25.5
25
25.5
25
23.4
23.4
19.8
19.8
37
37
tbd
23.4
44
24
16
19
17.4
17
tbd
36
36
19
19
tbd
32.3
32.3
tbd
28
tbd
tbd
35.7
35.7
31.3
31.5
31.3
31
35.6
35.6
20.8
20.8
26.5
26.5
tbd
35.6
15
28.3
1
0.3
2
2
tbd
1.5
1.5
35
35
tbd
2
2
tbd
3
tbd
tbd
3
3
4
4
4
4
6
6
2.5
2.5
5
5
tbd
6
7
8
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
tbd
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
tbd
1-c W-CDMA
1-c W-CDMA
tbd
1-c W-CDMA
tbd
tbd
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
2-c W-CDMA
2-c W-CDMA
1-c W-CDMA
1-c W-CDMA
tbd
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
P3dB
* Check status in section 3.1, as this type is not yet released for mass production
(1)
56
24/7 RF - Version 2 - 2017
3.2.12 Small Cell LDMOS Transistors (continued)
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
PL(AV)
(W)
Test signal
BLM7G1822S-80PBG
BLM7G1822S-80AB
BLM7G1822S-80PB
BLF9G38LS-90P
BLC8G27LS-100AV
SOT1212-2
SOT1211-1
SOT1211-2
SOT1121B
SOT1275-1
1805
1805
1805
3400
2496
2170
2170
2170
3600
2690
80
80
80
90
100 (1)
28
28
28
28
28
24
24
24
28
44
28
28.3
28
15
15.5
8
8
8
20
17.8
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
1-c W-CDMA
3.2.13 MIMO LDMOS Transistors
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
PL(AV)
(W)
Test signal
BLP7G22-05
BLP8G27-5
BLP7G22-10
BLP8G27-10
BLM9D2325-20AB*
BLM9D2527-20AB
BLM8D1822-25B*
BLM9D2327-25B*
BLM9D18-25AB*
BLM8D1822S-50PB
BLM8D1822S-50PBG
SOT1179-2
SOT1371-1
SOT1179-2
SOT1371-1
SOT1462-1
SOT1462-1
SOT1462-1
SOT1462-1
SOT1462-1
SOT1211-2
SOT1212-2
700
700
700
700
2300
2500
1800
2300
1800
1805
1805
2700
2700
2700
2700
2500
2700
2200
2700
1880
2170
2170
5
5
10
10
20 (1)
20 (1)
25 (1)
25 (1)
25 (1)
50 (1)
50 (1)
28
28
28
28
28
28
28
28
28
28
28
23
19
25
22
tbd
43
tbd
tbd
tbd
37
37
16
19
17.4
17
tbd
28
tbd
tbd
tbd
26.5
26.5
1
0.3
2
2
tbd
3
tbd
tbd
tbd
5
5
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
2-c W-CDMA
tbd
1-c W-CDMA
tbd
tbd
tbd
1-c W-CDMA
1-c W-CDMA
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
PL(AV)
(W)
Test signal
BLP9H10S-30*
BLC9H10XS-60P*
BLF6H10LS-160
BLC9H10XS-300P*
BLC9H10XS-350A*
BLC9H10XS-400A*
BLC9H10XS-400P*
BLC9H10XS-600A*
BLC9H10XS-800P*
SOT1482
SOT1273-7
SOT467B
SOT1273-7
SOT1273-7
SOT1273-7
SOT1273-7
SOT1250-1
SOT1252-7
700
700
729
700
600
700
700
700
700
1000
1000
960
1000
1000
1000
1000
1000
1000
30
60 (1)
160
300 (1)
350 (1)
400 (1)
400 (1)
600 (1)
800 (1)
50
50
50
50
50
50
50
50
50
tbd
tbd
34
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
20
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
38
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
2-c W-CDMA
tbd
tbd
tbd
tbd
tbd
tbd
RF Product
Portfolio
3.2.14 High Voltage LDMOS Transistors
P3dB
* Check status in section 3.1, as this type is not yet released for mass production
(1)
24/7 RF - Version 2 - 2017
57
3.3
RF Power Transistors for Broadcast
RF power transistor selection guide on www.ampleon.com/products/broadcast
Easy-to-use parametric filters help you choose the right RF power transistor for your design
Device Naming Conventions for Broadcast
B L P 05 H
6 L S 350 P
Push-pull device
P1dB power
Option: earless package
Flange material
L = CPC, X =Cu
LDMOS technology generation
M: Medium voltage
H: High voltage
Operating frequency (in 100 MHz; here 0-500)
F: Ceramic package
C: Air-cavity plastic (ACP) package
P: Overmolded plastic package (OMP)
L: High-frequency power transistor
B: Semiconductor die made of Si
3.3.1
UHF Broadcast LDMOS Transistors (470 - 860 MHz)
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
PL(AV)
(W)
BLP10H603
BLP10H605
BLP10H610
BLF571
BLF642
BLF871
BLF871S
BLF881
BLF881S
BLP15M7160P
BLF882
BLF882S
BLF884P
BLF884PS
BLF879P
BLF879PS
BLF888A
BLF888AS
BLF888D
BLF888DS
BLF888B
BLF888BS
BLF888E
BLF888ES
BLF898*
BLF898S*
SOT1352-1
SOT1352-1
SOT1352-1
SOT467C
SOT467C
SOT467C
SOT467B
SOT467C
SOT467B
SOT1223-2
SOT502A
SOT502B
SOT1121A
SOT1121B
SOT539A
SOT539B
SOT539A
SOT539B
SOT539A
SOT539B
SOT539A
SOT539B
SOT539A
SOT539B
SOT539A
SOT539B
10
10
10
10
1
1
1
1
1
10
10
10
470
470
470
470
470
470
470
470
470
470
470
470
470
470
1400
1400
1400
500
1400
1000
1000
1000
1000
1500
860
860
860
860
860
860
860
860
806
806
860
860
790
790
800
800
2.5
5
10
20
35
100
100
140
140
160
200
200
350
350
500
500
600
600
600
600
650
650
750
750
900
900
50
50
50
50
32
40
40
50
50
28
50
50
50
50
42
42
50
50
50
50
50
50
50
50
50
50
62
59.6
60
70
63
60
60
49
49
59.7
63
63
46
46
47
47
31
31
40
40
33
33
52
52
28
28
22.8
22.4
22
27.5
19
21
21
21
21
19.4
20.6
20.6
21
21
21
21
20
20
17
17
21
21
17
17
18
18
24
24
33
33
* Check status in section 3.1, as this type is not yet released for mass production
58
24/7 RF - Version 2 - 2017
33
33
70
70
95
95
110
110
130
130
120
120
150
150
180
180
Test signal
CW class-AB @ 860 MHz
CW pulsed class-AB @ 860 MHz
CW pulsed class-AB @ 860 MHz
CW
CW
CW
CW
CW
CW
CW
CW
CW
CW
CW
CW
CW
DVB-T (8k OFDM)
DVB-T (8k OFDM)
DVB-T (8k OFDM)
DVB-T (8k OFDM)
DVB-T (8k OFDM)
DVB-T (8k OFDM)
DVB-T (8k OFDM)
DVB-T (8k OFDM)
DVB-T (8k OFDM)
DVB-T (8k OFDM)
HF / VHF Broadcast LDMOS Transistors (0 - 500 MHz)
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
PL(AV)
(W)
Test signal
BLP10H603
BLP10H605
BLP25M705
BLP35M805
BLF640
BLP10H610
BLP25M710
BLP27M810
BLF571
BLF642
BLP05H635XR
BLP05H635XRG
BLF644P
BLP05H675XR
BLP05H675XRG
BLF645
BLF871
BLF871S
BLP05H6110XR
BLP05H6110XRG
BLF881
BLF881S
BLP05H6150XR
BLP05H6150XRG
BLF647P
BLF647PS
BLF882
BLF882S
BLF182XR
BLF182XRS
BLP05H6250XR
BLP05H6250XRG
BLF573
BLF573S
BLF183XR
BLF183XRS
BLP05H6350XR
BLP05H6350XRG
BLF174XR
BLF174XRS
BLF574
BLF574XR
BLF574XRS
BLF184XR
BLF184XRG
BLF184XRS
BLP05H6700XR
BLP05H6700XRG
BLF178P
BLF578
BLF178XR
BLF178XRS
BLF188XR
BLF188XRG
BLF188XRS
BLF578XR
BLF578XRS
BLF189XRA*
BLF189XRAS*
BLF189XRB*
BLF189XRBS*
SOT1352-1
SOT1352-1
SOT1179-2
SOT1371-1
SOT538A
SOT1352-1
SOT1179-2
SOT1371-1
SOT467C
SOT467C
SOT1223-2
SOT1224-2
SOT1228A
SOT1223-2
SOT1224-2
SOT540A
SOT467C
SOT467B
SOT1223-2
SOT1224-2
SOT467C
SOT467B
SOT1223-2
SOT1224-2
SOT1121A
SOT1121B
SOT502A
SOT502B
SOT1121A
SOT1121B
SOT1223-2
SOT1224-2
SOT502A
SOT502B
SOT1121A
SOT1121B
SOT1223-2
SOT1224-2
SOT1214A
SOT1214B
SOT539A
SOT1214A
SOT1214B
SOT1214A
SOT1214C
SOT1214B
SOT1138-2
SOT1204-2
SOT539A
SOT539A
SOT539A
SOT539B
SOT539A
SOT1248C
SOT539B
SOT539A
SOT539B
SOT539A
SOT539B
SOT539A
SOT539B
10
10
10
10
10
10
10
10
10
1
10
10
10
10
10
1
1
1
10
10
1
1
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
1
1
1
1
1400
1400
2500
3500
2200
1400
2500
2700
500
1400
600
600
1300
600
600
1400
1000
1000
600
600
1000
1000
600
600
1500
1500
860
860
600
600
600
600
500
500
600
600
600
600
128
128
500
500
500
600
600
600
600
600
128
500
128
128
600
600
600
500
500
300
300
150
150
2.5
5
5
5
10
10
10
10
20
35
35
35
70
75
75
100
100
100
110
110
140
140
150
150
200
200
200
200
250
250
250
250
300
300
350
350
350
350
600
600
600
600
600
700
700
700
700
700
1200
1200
1400
1400
1400
1400
1400
1400
1400
1600
1600
1900
1900
50
50
28
32
28
50
28
32
50
32
50
50
32
50
50
32
40
40
50
50
50
50
50
50
32
32
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
62
59.6
50
50
31
60
64.5
50.6
70
63
75
75
66
75
75
56
60
60
75
75
49
49
75
75
70
70
63
63
75
75
75
75
70
70
75
75
75
75
73
73
70
74.7
74.7
73.5
73.5
73.5
75
75
75
75
72
72
73
73
73
69
69
tbd
tbd
tbd
tbd
22.8
22.4
16.4
20
19.3
22
16.2
18.4
27.5
19
27
27
23.5
27
27
18
21
21
27
27
21
21
27
27
18
17.5
20.6
20.6
28
28
27
27
27.2
27.2
28
28
27.5
27.5
29
29
26.5
24
24
23.9
23.9
23.9
26
26
28.5
26
28
28
24.4
24.4
24.4
23.5
23.5
tbd
tbd
tbd
tbd
2
24
24
33
33
33
33
tbd
tbd
tbd
tbd
CW class-AB @ 860 MHz
CW pulsed class-AB @ 860 MHz
CW class-AB @ 2450 MHz
CW class-AB @ 2450 MHz
1-c W-CDMA
CW pulsed class-AB @ 860 MHz
CW pulsed class-AB @ 2450 MHz
CW class-AB @ 2450 MHz
CW
CW
Pulsed RF
Pulsed RF
CW pulsed, class-AB
Pulsed RF
Pulsed RF
CW
CW
CW
Pulsed RF
Pulsed RF
CW
CW
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
CW
CW
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
CW
CW
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
CW
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
CW
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
CW
CW
Pulsed RF
Pulsed RF
* Check status in section 3.1, as this type is not yet released for mass production
24/7 RF - Version 2 - 2017
59
RF Product
Portfolio
3.3.2
3.3.3
HF / VHF Broadcast LDMOS Transistors (0 - 1600 MHz)
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
PL(AV)
(W)
Test signal
BLP10H603
BLP10H605
BLP25M705
BLP35M805
BLF640
BLP10H610
BLP25M710
BLP27M810
BLF571
BLP10H630P
BLP10H630PG
BLF642
BLP10H660P
BLP10H660PG
BLF644P
BLP10H690P
BLP10H690PG
BLF645
BLF871
BLF871S
BLP10H6120P
BLP10H6120PG
BLF10M6135
BLF10M6LS135
BLF881
BLF881S
BLF10M6160
BLF10M6LS160
BLP15M7160P
BLF10M6200
BLF10M6LS200
BLF2324M8LS200P
BLF647P
BLF647PS
BLF6G13L-250P
BLF6G13LS-250P
BLF6G13LS-250PG
BLF6G15L-500H
BLF6G15LS-500H
BLF10H6600P
BLF10H6600PS
SOT1352-1
SOT1352-1
SOT1179-2
SOT1371-1
SOT538A
SOT1352-1
SOT1179-2
SOT1371-1
SOT467C
SOT1223-2
SOT1224-2
SOT467C
SOT1223-2
SOT1224-2
SOT1228A
SOT1223-2
SOT1224-2
SOT540A
SOT467C
SOT467B
SOT1223-2
SOT1224-2
SOT502A
SOT502B
SOT467C
SOT467B
SOT502A
SOT502B
SOT1223-2
SOT502A
SOT502B
SOT539B
SOT1121A
SOT1121B
SOT1121A
SOT1121B
SOT1121E
SOT539A
SOT539B
SOT539A
SOT539B
10
10
10
10
10
10
10
10
10
10
10
1
10
10
10
10
10
1
1
1
10
10
700
700
1
1
700
700
10
700
700
2300
10
10
1300
1300
1300
1400
1400
400
400
1400
1400
2500
3500
2200
1400
2500
2700
500
1000
1000
1400
1000
1000
1300
1000
1000
1400
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1500
1000
1000
2400
1500
1500
1300
1300
1300
1500
1500
1000
1000
2.5
5
5
5
10
10
10
10
20
30
30
35
60
60
70
90
90
100
100
100
120
120
135
135
140
140
160
160
160
200
200
200
200
200
250
250
250
500
500
600
600
50
50
28
32
28
50
28
32
50
50
50
32
50
50
32
50
50
32
40
40
50
50
28
28
50
50
32
32
28
28
28
28
32
32
50
50
50
50
50
50
50
62
59.6
50
50
31
60
64.5
50.6
70
72
72
63
72
72
66
72
72
56
60
60
72
72
28
28
49
49
27
27
59.7
28.5
28.5
32
70
70
56
56
56
19
19
46
46
22.8
22.4
16.4
20
19.3
22
16.2
18.4
27.5
18
18
19
18
18
23.5
18
18
18
21
21
18
18
21
21
21
21
22.5
22.5
19.4
20
20
17.2
18
17.5
17
17
17
16
16
20.8
20.8
2
24
24
26.5
26.5
33
33
32
32
40
40
60
65
65
-
CW class-AB @ 860 MHz
CW pulsed class-AB @ 860 MHz
CW class-AB @ 2450 MHz
CW class-AB @ 2450 MHz
1-c W-CDMA
CW pulsed class-AB @ 860 MHz
CW pulsed class-AB @ 2450 MHz
CW class-AB @ 2450 MHz
CW
Pulsed RF
Pulsed RF
CW
Pulsed RF
Pulsed RF
CW pulsed, class-AB
Pulsed RF
Pulsed RF
CW
CW
CW
Pulsed RF
Pulsed RF
2-c W-CDMA
2-c W-CDMA
CW
CW
2-c W-CDMA
2-c W-CDMA
CW
2-c W-CDMA
2-c W-CDMA
1-c W-CDMA
Pulsed RF
Pulsed RF
CW
CW
CW
DVB-T (8k OFDM)
DVB-T (8k OFDM)
2-Tone, class-AB
2-Tone, class-AB
60
24/7 RF - Version 2 - 2017
3.4
RF Power Transistors for ISM (Industrial, Scientific and Medical)
RF power transistor selection guide on www.ampleon.com/products/ism
Easy-to-use parametric filters help you choose the right RF power transistor for your design
Device Naming Conventions for ISM
B L P 05 H
6 L S 350 XR
Extremely Rugged
P1dB power
Option: earless package
RF Product
Portfolio
Flange material
L = CPC, X =Cu
LDMOS technology generation
M: Medium voltage
H: High voltage
Operating frequency (in 100 MHz; here 0-500)
F: Ceramic package
C: Air-cavity plastic (ACP) package
P: Overmolded plastic package (OMP)
L: High-frequency power transistor
B: Semiconductor die made of Si
3.4.1
ISM LDMOS Transistors (0 - 500 MHz / XR)
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
Test signal
BLP10H603
BLP10H605
BLP10H610
BLF571
BLP05H635XR
BLP05H635XRG
BLP05H675XR
BLP05H675XRG
BLP05H6110XR
BLP05H6110XRG
BLP05H6150XR
BLP05H6150XRG
BLF182XR
BLF182XRS
BLP05H6250XR
BLP05H6250XRG
BLF573
BLF573S
BLF183XR
BLF183XRS
BLP05H6350XR
BLP05H6350XRG
BLF174XR
BLF174XRS
BLF574
BLF574XR
BLF574XRS
SOT1352-1
SOT1352-1
SOT1352-1
SOT467C
SOT1223-2
SOT1224-2
SOT1223-2
SOT1224-2
SOT1223-2
SOT1224-2
SOT1223-2
SOT1224-2
SOT1121A
SOT1121B
SOT1223-2
SOT1224-2
SOT502A
SOT502B
SOT1121A
SOT1121B
SOT1223-2
SOT1224-2
SOT1214A
SOT1214B
SOT539A
SOT1214A
SOT1214B
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
1400
1400
1400
500
600
600
600
600
600
600
600
600
600
600
600
600
500
500
600
600
600
600
128
128
500
500
500
2.5
5
10
20
35
35
75
75
110
110
150
150
250
250
250
250
300
300
350
350
350
350
600
600
600
600
600
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
62
59.6
60
70
75
75
75
75
75
75
75
75
75
75
75
75
70
70
75
75
75
75
73
73
70
74.7
74.7
22.8
22.4
22
27.5
27
27
27
27
27
27
27
27
28
28
27
27
27.2
27.2
28
28
27.5
27.5
29
29
26.5
24
24
CW class-AB @ 860 MHz
CW pulsed class-AB @ 860 MHz
CW pulsed class-AB @ 860 MHz
CW
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
CW
CW
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
CW
Pulsed RF
Pulsed RF
24/7 RF - Version 2 - 2017
61
3.4.1
ISM LDMOS Transistors (0 - 500 MHz / XR) (continued)
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
Test signal
BLF184XR
BLF184XRG
BLF184XRS
BLP05H6700XR
BLP05H6700XRG
BLF178P
BLF578
BLF178XR
BLF178XRS
BLF188XR
BLF188XRG
BLF188XRS
BLF578XR
BLF578XRS
BLF189XRA*
BLF189XRAS*
BLF189XRB*
BLF189XRBS*
SOT1214A
SOT1214C
SOT1214B
SOT1138-2
SOT1204-2
SOT539A
SOT539A
SOT539A
SOT539B
SOT539A
SOT1248C
SOT539B
SOT539A
SOT539B
SOT539A
SOT539B
SOT539A
SOT539B
10
10
10
10
10
10
10
10
10
10
10
10
10
10
1
1
1
1
600
600
600
600
600
128
500
128
128
600
600
600
500
500
300
300
150
150
700
700
700
700
700
1200
1200
1400
1400
1400
1400
1400
1400
1400
1600
1600
1900
1900
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
73.5
73.5
73.5
75
75
75
75
72
72
73
73
73
69
69
tbd
tbd
tbd
tbd
23.9
23.9
23.9
26
26
28.5
26
28
28
24.4
24.4
24.4
23.5
23.5
tbd
tbd
tbd
tbd
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
CW
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
CW
CW
Pulsed RF
Pulsed RF
3.4.2
ISM LDMOS Transistors (0 - 1600 MHz)
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
PL(AV)
(W)
Test signal
BLP10H603
BLP10H605
BLP25M705
BLP35M805
BLF640
BLP10H610
BLP25M710
BLP27M810
BLP10H630P
BLP10H630PG
BLF642
BLP10H660P
BLP10H660PG
BLF644P
BLP10H690P
BLP10H690PG
BLF645
BLP10H6120P
BLP10H6120PG
BLP15M7160P
BLF1721M8LS200
BLF2324M8LS200P
BLF647P
BLF647PS
BLF6G13L-250P
BLF6G13LS-250P
BLF6G15L-500H
BLF6G15LS-500H
BLF10H6600P
BLF10H6600PS
SOT1352-1
SOT1352-1
SOT1179-2
SOT1371-1
SOT538A
SOT1352-1
SOT1179-2
SOT1371-1
SOT1223-2
SOT1224-2
SOT467C
SOT1223-2
SOT1224-2
SOT1228A
SOT1223-2
SOT1224-2
SOT540A
SOT1223-2
SOT1224-2
SOT1223-2
SOT502B
SOT539B
SOT1121A
SOT1121B
SOT1121A
SOT1121B
SOT539A
SOT539B
SOT539A
SOT539B
10
10
10
10
10
10
10
10
10
10
1
10
10
10
10
10
1
10
10
10
1700
2300
10
10
1300
1300
1400
1400
400
400
1400
1400
2500
3500
2200
1400
2500
2700
1000
1000
1400
1000
1000
1300
1000
1000
1400
1000
1000
1500
2100
2400
1500
1500
1300
1300
1500
1500
1000
1000
2.5
5
5
5
10
10
10
10
30
30
35
60
60
70
90
90
100
120
120
160
200
200
200
200
250
250
500
500
600
600
50
50
28
32
28
50
28
32
50
50
32
50
50
32
50
50
32
50
50
28
28
28
32
32
50
50
50
50
50
50
62
59.6
50
50
31
60
64.5
50.6
72
72
63
72
72
66
72
72
56
72
72
59.7
28.5
32
70
70
56
56
19
19
46
46
22.8
22.4
16.4
20
19.3
22
16.2
18.4
18
18
19
18
18
23.5
18
18
18
18
18
19.4
19
17.2
18
17.5
17
17
16
16
20.8
20.8
2
55
60
65
65
-
CW class-AB @ 860 MHz
CW pulsed class-AB @ 860 MHz
CW class-AB @ 2450 MHz
CW class-AB @ 2450 MHz
1-c W-CDMA
CW pulsed class-AB @ 860 MHz
CW pulsed class-AB @ 2450 MHz
CW class-AB @ 2450 MHz
Pulsed RF
Pulsed RF
CW
Pulsed RF
Pulsed RF
CW pulsed, class-AB
Pulsed RF
Pulsed RF
CW
Pulsed RF
Pulsed RF
CW
2-c W-CDMA
1-c W-CDMA
Pulsed RF
Pulsed RF
CW
CW
DVB-T (8k OFDM)
DVB-T (8k OFDM)
2-Tone, class-AB
2-Tone, class-AB
* Check status in section 3.1, as this type is not yet released for mass production
62
24/7 RF - Version 2 - 2017
3.5
RF Power Transistors for RF Energy
RF power transistor selection guide on www.ampleon.com/products/rf-energy
Easy-to-use parametric filters help you choose the right RF power transistor for your design
Device Naming Conventions for RF Energy
B L C 2425
M
8 L S 300 P
Push-pull device
P1dB power
Option: earless package
Flange material
L = CPC, X =Cu
LDMOS technology generation
L: Low voltage
M: Medium voltage
operating
frequency (in 100 MHz; maximum)
H: High voltage
3.5.1
RF Product
Portfolio
Operating frequency (in 100 MHz; here 2400-2500)
F: Ceramic package
C: Air-cavity plastic (ACP) package
P: Overmolded plastic package (OMP)
L: High-frequency power transistor
B: Semiconductor die made of Si
RF Energy LDMOS Transistors (0 - 500 MHz)
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
PL(AV)
(W)
Test signal
BLP05H635XR
BLP05H635XRG
BLP05H675XR
BLP05H675XRG
BLP05H6110XR
BLP05H6110XRG
BLF10M6135
BLP05H6150XRG
BLC10M6XS200
BLP05M7200
BLP05H6250XR
BLP05H6250XRG
BLP05H6350XR
BLP05H6350XRG
BLP05H6700XR
BLP05H6700XRG
SOT1223-2
SOT1224-2
SOT1223-2
SOT1224-2
SOT1223-2
SOT1224-2
SOT502A
SOT1224-2
SOT1270-1
SOT1138-2
SOT1223-2
SOT1224-2
SOT1223-2
SOT1224-2
SOT1138-2
SOT1204-2
10
10
10
10
10
10
700
10
425
425
10
10
10
10
10
10
600
600
600
600
600
600
1000
600
450
450
600
600
600
600
600
600
35
35
75
75
110
110
135
150
200
200
250
250
350
350
700
700
50
50
50
50
50
50
28
50
28
28
50
50
50
50
50
50
75
75
75
75
75
75
28
75
80
77
75
75
75
75
75
75
27
27
27
27
27
27
21
27
21
21
27
27
27.5
27.5
26
26
26.5
-
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
2-c W-CDMA
Pulsed RF
CW
CW
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
24/7 RF - Version 2 - 2017
63
3.5.2
RF Energy LDMOS Transistors (915 MHz)
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
PL(AV)
(W)
Test signal
BLP10H603
BLP10H605
BLP10H610
BLP10H630P
BLP10H630PG
BLP10H660P
BLP10H660PG
BLP10H690P
BLP10H690PG
BLP10H6120P
BLP10H6120PG
BLF0910H6L500
BLF0910H6LS500
BLF10H6600P
BLF10H6600PS
SOT1352-1
SOT1352-1
SOT1352-1
SOT1223-2
SOT1224-2
SOT1223-2
SOT1224-2
SOT1223-2
SOT1224-2
SOT1223-2
SOT1224-2
SOT502A
SOT502B
SOT539A
SOT539B
10
10
10
10
10
10
10
10
10
10
10
900
900
400
400
1400
1400
1400
1000
1000
1000
1000
1000
1000
1000
1000
930
930
1000
1000
2.5
5
10
30
30
60
60
90
90
120
120
500
500
600
600
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
62
59.6
60
72
72
72
72
72
72
72
72
61
61
46
46
22.8
22.4
22
18
18
18
18
18
18
18
18
18
18
20.8
20.8
-
CW class-AB @ 860 MHz
CW pulsed class-AB @ 860 MHz
CW pulsed class-AB @ 860 MHz
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
CW
CW
2-Tone, class-AB
2-Tone, class-AB
3.5.3
RF Energy LDMOS Transistors (2.45 GHz)
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
PL(AV)
(W)
Test signal
BLP35M805
BLP27M810
BLF2425M9L30
BLF2425M9LS30
BLM2425M7S60P
BLF2425M8L140
BLF2425M9LS140
BLC2425M9LS250
BLF2425M7LS250P
BLF2425M7L250P
BLC2425M8LS300P
BLC2425M9LS700PV*
SOT1371-1
SOT1371-1
SOT1135A
SOT1135B
SOT1211-1
SOT502A
SOT502B
SOT1270-1
SOT539B
SOT539A
SOT1250-1
SOT1258-1
10
10
2400
2400
2400
2400
2400
2400
2400
2400
2400
2400
3500
2700
2500
2500
2500
2500
2500
2500
2500
2500
2500
2500
5
10
30
30
60
140
140
250
250
250
300
1200 (1)
32
32
32
32
32
28
28
32
28
28
32
32
50
50.6
61
61
45
56
58
61
51
51
58
50
20
18.4
18.5
18.5
27.5
19
19
18.5
15
15
17.5
12.5
30
30
60
140
140
250
250
250
300
-
CW class-AB @ 2450 MHz
CW class-AB @ 2450 MHz
CW
CW
CW class-AB @ 2450 MHz
CW
CW
CW
CW
CW
CW
Pulsed CW
P3dB pulsed. ∂ ≤ 10%
* Check status in section 3.1, as this type is not yet released for mass production
(1)
64
24/7 RF - Version 2 - 2017
3.6
RF Power Transistors for Aerospace & Defense
RF power transistor selection guide on www.ampleon.com/products/aerospace-and-defense
Easy-to-use parametric filters help you choose the right RF power transistor for your design
Device Naming Conventions for Aerospace & Defense
-120 G
Option: gullwing shaped leads
P: Push-pull device
R: Enhanced ruggedness
P1dB power
S: Earless package
P: Pallet
Flange material
L = CPC
Frequency band (in 100 MHz; here: 2700-3100)
G: Standard LDMOS ( 28 V)
H: High voltage LDMOS (50 V)
LDMOS technology generation
A: Avionics frequency band operation
L: L-Band frequency operation
S: S-Band frequency operation
L: High frequency power transistor
B: Semiconductor die made of Si
3.6.1
6 G
2731 L
S
RF Product
Portfolio
B L S
Avionics LDMOS Transistors
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
Test signal
BLL6H0514-25
BLA6G1011L-200RG
BLA6G1011LS-200RG
BLA6G1011-200R
BLA8G1011LS-300
BLA8G1011L-300
BLA8G1011L-300G
BLA8G1011LS-300G
BLA9G1011L-300*
BLA9G1011L-300G*
BLA9G1011LS-300G*
BLA9G1011LS-300
BLA8H0910L-500
BLA8H0910LS-500
BLA6H0912-500
BLA6H1011-600
BLU6H0410L-600P
BLU6H0410LS-600P
BLF988
BLF988S
BLA6H0912L-1000
BLA6H0912LS-1000
SOT467C
SOT502D
SOT502C
SOT502A
SOT502B
SOT502A
SOT502F
SOT502E
SOT502A
SOT502F
SOT502E
SOT502B
SOT502A
SOT502B
SOT634A
SOT539A
SOT539A
SOT539B
SOT539A
SOT539B
SOT539A
SOT539B
500
1030
1030
1030
1030
1030
1030
1030
1030
1030
1030
1030
900
900
960
1030
400
400
500
500
960
960
1400
1090
1090
1090
1090
1090
1090
1090
1090
1090
1090
1090
930
930
1215
1090
900
900
1000
1000
1215
1215
25
200
200
200
300
300
300
300
300
300
300
300
500
500
500
600
600
600
600
600
1000
1000
50
28
28
28
32
32
32
32
32
32
32
32
50
50
50
48
50
50
50
50
50
50
50
65
65
65
56
56
56
56
57
57
57
57
62.5
62.5
50
52
58
58
58
58
51
51
19
20
20
20
16.5
16.5
16.5
16.5
20.5
20.5
20.5
20.5
19.5
19.5
17
17
20
20
19.8
19.8
15.5
15.5
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
CW pulsed
CW pulsed
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed, class-AB
Pulsed, class-AB
Pulsed RF
Pulsed RF
* Check status in section 3.1, as this type is not yet released for mass production
24/7 RF - Version 2 - 2017
65
3.6.2
L-Band LDMOS Transistors
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
Test signal
BLL8H0514-25
BLL6H0514-25
BLL6H0514L-130
BLL6H0514LS-130
BLL8H0514L-130
BLL8H0514LS-130
BLL6H1214LS-250
BLL8H1214LS-250
BLL6G1214L-250
BLL6H1214L-250
BLL6H1214P2S-250
BLL8H1214L-250
BLL6H1214-500
BLL8H1214L-500
BLL6H1214LS-500
BLL8H1214LS-500
BLL9G1214L-600*
BLL9G1214LS-600*
SOT467C
SOT467C
SOT1135A
SOT1135B
SOT1135A
SOT1135B
SOT502B
SOT502B
SOT502A
SOT502A
SOM039
SOT502A
SOT539A
SOT539A
SOT539B
SOT539B
SOT502A
SOT502B
500
500
500
500
500
500
1200
1200
1200
1200
1.2
1200
1200
1200
1200
1200
1200
1200
1400
1400
1400
1400
1400
1400
1400
1400
1400
1400
1.4
1400
1400
1400
1400
1400
1400
1400
25
25
130
130
130
130
250
250
250
250
250
250
500
500
500
500
600
600
50
50
50
50
50
50
50
50
36
50
45
50
50
50
50
50
32
32
59
50
50
50
50
50
55
55
45
55
48
55
50
50
50
50
60
60
21
19
17
17
17
17
17
17
15
17
27
17
17
17
17
17
19
19
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
3.6.3
S-Band LDMOS Transistors
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
Test signal
BLS6G2731-6G
BLS6G3135-20
BLS6G3135S-20
BLS6G2735L-30
BLS6G2735LS-30
BLS9G2735L-50*
BLS9G2735LS-50*
BLS7G2325L-105
BLS6G3135-120
BLS6G2731-120
BLS6G2731S-120
BLS6G3135S-120
BLS6G2731S-130
BLS6G2933S-130
BLS7G2933S-150
BLS7G2730L-200P
BLS7G2730LS-200P
BLS7G3135LS-200
BLS9G2729L-350
BLS9G2729LS-350
BLS7G2729L-350P
BLS7G3135L-350P
BLS7G3135LS-350P
BLS7G2729LS-350P
BLS8G2731L-400P
BLS8G2731LS-400P
BLS9G2731L-400
BLS9G2731LS-400
BLS9G2934L-400
BLS9G2934LS-400
BLS9G3135L-400
BLS9G3135LS-400
SOT975C
SOT608A
SOT608B
SOT1135A
SOT1135B
SOT1135A
SOT1135B
SOT502A
SOT502A
SOT502A
SOT502B
SOT502B
SOT922-1
SOT922-1
SOT922-1
SOT539A
SOT539B
SOT502B
SOT502A
SOT502B
SOT539A
SOT539A
SOT539B
SOT539B
SOT539A
SOT539B
SOT502A
SOT502B
SOT502A
SOT502B
SOT502A
SOT502B
2700
3100
3100
2700
2700
2700
2700
2300
3100
2700
2700
3100
2700
2900
2900
2700
2700
3100
2700
2700
2700
3100
3100
2700
2700
2700
2700
2700
2900
2900
3100
3100
3100
3500
3500
3500
3500
3500
3500
2500
3500
3100
3100
3500
3100
3300
3300
3000
3000
3500
2900
2900
2900
3500
3500
2900
3100
3100
3100
3100
3400
3400
3500
3500
6
20
20
30
30
50
50
105
120
120
120
120
130
130
150
200
200
200
350
350
350
350
350
350
400
400
400
400
400
400
400
400
32
32
32
32
32
32
32
30
32
32
32
32
32
32
32
32
32
32
28
28
32
32
32
32
32
32
32
32
32
32
32
32
33
45
45
50
50
47
47
55
43
48
48
43
50
47
47
48
48
43
50
50
50
43
43
50
47
47
47
47
43
43
43
43
15
15.5
15.5
13
13
12
12
16.5
11
13.5
13.5
11
12
12.5
13.5
12
12
12
14
14
13
12
12
13
13
13
13
13
12
12
12
12
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF @ 3.1 GHz
Pulsed RF @ 3.1 GHz
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
* Check status in section 3.1, as this type is not yet released for mass production
66
24/7 RF - Version 2 - 2017
Sub-1 GHz LDMOS Transistors
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
Test signal
BLP10H610
BLP10H630P
BLP10H630PG
BLP05H635XR
BLP05H635XRG
BLP10H660P
BLP10H660PG
BLP05H675XR
BLP05H675XRG
BLP10H6120P
BLP10H6120PG
BLF182XR
BLF182XRS
BLF183XR
BLF183XRS
BLF574XR
BLF574XRS
BLF184XRG
BLP05H6700XR
BLP05H6700XRG
BLF184XR
BLF184XRS
BLF578
BLF578XR
BLF578XRS
SOT1352-1
SOT1223-2
SOT1224-2
SOT1223-2
SOT1224-2
SOT1223-2
SOT1224-2
SOT1223-2
SOT1224-2
SOT1223-2
SOT1224-2
SOT1121A
SOT1121B
SOT1121A
SOT1121B
SOT1214A
SOT1214B
SOT1214C
SOT1138-2
SOT1204-2
SOT1214A
SOT1214B
SOT539A
SOT539A
SOT539B
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
1400
1000
1000
600
600
1000
1000
600
600
1000
1000
600
600
600
600
500
500
600
600
600
600
600
500
500
500
10
30
30
35
35
60
60
75
75
120
120
250
250
350
350
600
600
700
700
700
700
700
1200
1400
1400
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
60
72
72
75
75
72
72
75
75
72
72
75
75
75
75
74.7
74.7
73.5
75
75
73.5
73.5
75
69
69
22
18
18
27
27
18
18
27
27
18
18
28
28
28
28
24
24
23.9
26
26
23.9
23.9
26
23.5
23.5
CW pulsed class-AB @ 860 MHz
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
CW
Pulsed RF
Pulsed RF
3.6.5
Pallets and Modules
Type
Pallet Size
Weight
Fmin
(MHz)
Fmax
(MHz)
Ppeak
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
Test signal
BLL6H1214P2S-250
BPS9G2934X-400*
BPS9G2933X-450*
BPS9G3135X-400*
5 x 12 cm
3.5 x 5.5 cm
3.5 x 5.5 cm
3.5 x 5.5 cm
80
85
85
85
1200
2900
2900
3100
1400
3400
3300
3500
250
400
450
450
45
32
32
32
48
43
45
44
27
12.5
13.5
12.5
Pulsed RF
Pulsed RF
Pulsed RF
Pulsed RF
* Check status in section 3.1, as this type is not yet released for mass production
24/7 RF - Version 2 - 2017
67
RF Product
Portfolio
3.6.4
3.7
Gallium Nitride (GaN) RF Power Devices
RF power transistor selection guide on www.ampleon.com/products/aerospace-and-defense/gan-devices
Easy-to-use parametric filters help you choose the right RF power transistor for your design
Device Naming Conventions for GaN Devices
C
L
F
1G
0040
S
50
P
P: Push-pull indicator, P = push-pull type; no P means single-ended transistor
2 to 1500:nominal P3dB in Watts: eg 50 = 50 W
S earless type, S = earless; no S means eared package
35 to 60: Upper frequency, 10x GHz value: 35 = 3.5 GHz; 60 = 6.0 GHz
00 to 40: Lower frequency, 10x GHz value: 00 = 0 GHz or DC; 40 = 4.0 GHz
1G: Technology generation: 1G = 1st generation
F: Package style: F = ceramic, P = overmolded plastic
L: High-frequency power transistor
C: Primary material identifier: C = wide band-gap compound materials, eg GaN
68
Type
Package
Fmin
(MHz)
Fmax
(MHz)
PL(1dB)
(W)
VDS
(V)
ηD
(%)
Gp
(dB)
Test signal
CLF1G0060-10
CLF1G0060S-10
CLF1G0060-30
CLF1G0060S-30
CLF1G0035-50
CLF1G0035S-50
CLF1G0035-100P
CLF1G0035S-100P
CLF1G0035-100
CLF1G0035S-100
CLF1G0035-200P
CLF1G0035S-200P
SOT1227A
SOT1227B
SOT1227A
SOT1227B
SOT467C
SOT467B
SOT1228A
SOT1228B
SOT467C
SOT467B
SOT1228A
SOT1228B
0
0
0
0
0
0
0
0
0
0
0
0
6000
6000
6000
6000
3500
3500
3500
3500
3500
3500
3500
3500
10
10
30
30
50
50
100
100
100
100
200
200
50
50
50
50
50
50
50
50
50
50
50
50
48.2
48.2
61
61
65
65
54.4
54.4
67.4
67.4
48
48
17.8
17.8
16.6
16.6
12
12
14.4
14.4
15.5
15.5
14
14
Pulsed RF @ 500 MHz
Pulsed RF @ 500 MHz
Pulsed RF @ 500 MHz
Pulsed RF @ 500 MHz
Pulsed RF @ 500 MHz
Pulsed RF @ 500 MHz
1-Tone pulsed @ 2600 MHz
1-Tone pulsed @ 2600 MHz
Pulsed RF @ 500 MHz
Pulsed RF @ 500 MHz
1-Tone pulsed @ 2000 MHz
1-Tone pulsed @ 2000 MHz
24/7 RF - Version 2 - 2017
RF Product
Portfolio
24/7 RF - Version 2 - 2017
69
70
24/7 RF - Version 2 - 2017
Supporting Best-Possible
Application Results
4. Design Support
Product Selection on Ampleon.com
Every product has its own webpage on the Ampleon website. Pages can be accessed in several ways: by product tree, by
application area or simply typing ' ' (e.g. "CLF1G0035S-200P") in the browser's search bar.
Product Tree and Parametric Search
Our online product tree (www.ampleon.com/products) categorizes the product by function. The parametric search tool allows
you to refine the selection based on performance requirements.
Design Support
Application Area
To find out what Ampleon offers in each application area, use www.ampleon.com/applications.
Documentation
Ampleon provides a complete library of technical and support documentation, from application notes and user guides to data
sheets and simulation models. You can access this documentation from specific product pages and also search for it on
www.ampleon.com/support/Documentation.
Simulation Tools
To help you evaluate our products for your specific application, Ampleon offers various simulation tools. For more information
see section 4.1.
Demonstration Boards and Samples
Demonstration board and evaluation samples are available for all products to build and evaluate prototypes. To obtain
a demonstration board or order small quantities of products, please contact your local Ampleon representative or authorized
distributor (visit www.ampleon.com/about/distribution-partners).
RF Power Lifetime Calculator
The RF Power Lifetime Calculator enables an interactive estimation of our LDMOS device lifetime. Median-Time-to-Failure (MTF),
the time that 50 % of the population has failed, is calculated as a function of junction temperature of the device, assuming
electromigration as the wear-out failure mechanism. This allows RF design engineers to optimize thermal characteristics of their
projects to generate an optimum system level solution. The online selection and calculation process will also eliminate the need
to browse through large amounts of product information to quickly find a specific RF power transistor and its performance
characteristics.
The RF Power Lifetime Calculator is available on www.ampleon.com/support/rf-power-lifetime-calculator and is linked to product
pages (where applicable).
24/7 RF - Version 2 - 2017
71
Product Longevity
Ampleon product longevity program ensures a stable supply of products for your embedded designs. Participating products
are available for a minimum of 10 years as of product launch and are supported by standard end-of-life notification policies.
Updates are available in PDF format at: www.ampleon.com/documents/other-type/Ampleon_Longevity_Overview.pdf
Additional Support
For additional support please contact your local Ampleon sales representative or authorized distributor.
You can also submit a question using the web form: www.ampleon.com/contact.
4.1
Simulation Models
Updates of this overview are available in PDF format at:
www.ampleon.com/dam/jcr:9c32341a-eb3e-4e4e-83f6-a257d8b73144/Ampleon_Model_Overview.pdf
ADS model
Microwave Office® Model
Type
ADS-2012
BLA0912-250
BLA6G1011-200R
BLA6G1011L-200RG
BLA6G1011LS-200RG
BLA6H0912-500
BLA6H0912L-1000
BLA6H0912LS-1000
BLA6H1011-600
BLA8G1011L-300
BLA8G1011LS-300
BLA8H0910L-500
BLA8H0910LS-500
BLA9G1011L-300
BLA9G1011LS-300
BLC10G20LS-240PWT
BLC10G22LS-240PVT
BLC10M6XS200
BLC2425M8LS300P
BLC2425M9LS250
BLC8G20LS-310AV
BLC8G20LS-400AV
BLC8G22LS-450AV
BLC8G24LS-240AV
BLC8G24LS-241AV
BLC8G27LS-180AV
BLC8G27LS-240AV
BLC8G27LS-245AV
BLC8G27LS-60AV
BLC8G27LS-60AVH
BLC9G15LS-400AVT
BLC9G15XS-400AVT
BLC9G20LS-120V
BLC9G20LS-160PV
BLC9G20LS-240PV
BLC9G20LS-361AVT
BLC9G20LS-470AVT
BLC9G20XS-160AV
BLC9G20XS-400AVT
BLC9G22XS-400AVT
72
ADS-2015
ADS-2016
Library
manual
S-parameter data
Simulation
example
36V_150mA
Available
→
→
→
→
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24/7 RF - Version 2 - 2017
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Available
Available
Available
Available
Available
Available
Available
Available
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Available
Available
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Available
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Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Simulation Models (continued)
ADS model
Microwave Office® Model
Type
BLC9G27LS-151AV
BLD6G22L-50
BLD6G22LS-50
BLF0910H6L500
BLF0910H6LS500
BLF1043
BLF1046
BLF145
BLF147
BLF1721M8LS200
BLF174XR
BLF174XRS
BLF175
BLF177
BLF178XR
BLF178XRS
BLF182XR
BLF182XRS
BLF183XR
BLF183XRS
BLF184XR
BLF184XRS
BLF188XR
BLF188XRS
BLF202
BLF242
BLF2425M7L250P
BLF2425M7LS250P
BLF2425M9L30
BLF2425M9LS140
BLF2425M9LS30
BLF244
BLF245
BLF246
BLF248
BLF25M612
BLF25M612G
BLF278
BLF346
BLF368
BLF3G21-30
BLF404
BLF521
BLF542
BLF544
BLF548
BLF571
BLF573
BLF573S
BLF574
BLF574XR
BLF574XRS
BLF578
BLF578XR
BLF578XRS
BLF640
BLF642
BLF644P
BLF645
ADS-2012
ADS-2015
ADS-2016
→
→
Available
Library
manual
S-parameter data
Simulation
example
Available
Available
→
→
→
→
Available
Available
28V_50mA
28V_300mA
14V_250mA
14V_1000mA
28V_250mA
28V_1000mA
25V_150mA
25V_100mA
50V_150mA
50V_100mA
6.25V_20mA
14V_10mA
12.5V_20mA
28V_10mA
12.5V_25mA
12.5V_50mA
14V_50mA
14V_250mA
14V_25mA
14V_50mA
14V_100mA
28V_250mA
Available
→
→
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Available
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Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Design Support
4.1
Available
Available
28V_25mA
28V_50mA
28V_50mA
28V_100mA
28V_250mA
35V_250mA
28V_10mA
28V_50mA
Available
25V_500mA 50V_500mA
14V_3000mA 28V_3000mA
14V_250mA
16V_250mA
26V_450mA
6.25V_50mA 12.5V_50mA
6.25V_10mA 12.5V_10mA
14V_10mA
14V_50mA
14V_40mA
28V_40mA
14V_160mA
28V_160mA
→
→
→
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Available
Available
Available
Available
Available
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Available
Available
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Available
Available
Available
24/7 RF - Version 2 - 2017
73
4.1
Simulation Models (continued)
ADS model
Microwave Office® Model
Type
BLF647P
BLF647PS
BLF6G10-200RN
BLF6G10LS-200RN
BLF6G13L-250P
BLF6G13LS-250P
BLF6G22L-40P
BLF6G22LS-40P
BLF6G27L-40P
BLF6G27LS-40P
BLF6G38-100
BLF6G38-10G
BLF6G38-50
BLF6G38LS-100
BLF6G38LS-50
BLF6H10L-160
BLF6H10LS-160
BLF7G20L-90P
BLF7G20LS-90P
BLF7G22L-130
BLF7G22LS-130
BLF7G24L-100
BLF7G24LS-100
BLF7G27L-140
BLF7G27LS-140
BLF871
BLF871S
BLF881
BLF881S
BLF884P
BLF884PS
BLF888A
BLF888AS
BLF888B
BLF888BS
BLF888D
BLF888DS
BLF888E
BLF888ES
BLF8G09LS-400PW
BLF8G10LS-300P
BLF8G19LS-170BV
BLF8G20LS-140GV
BLF8G20LS-160V
BLF8G20LS-200V
BLF8G20LS-400PGV
BLF8G22LS-140
BLF8G22LS-160BV
BLF8G22LS-205V
BLF8G22LS-240
BLF8G24L-200P
BLF8G24LS-100GV
BLF8G24LS-150GV
BLF8G24LS-200P
BLF8G27LS-100GV
BLF8G27LS-100P
BLF8G27LS-140V
BLF8G27LS-150GV
BLF8G38LS-75V
74
ADS-2012
ADS-2015
ADS-2016
→
→
→
→
→
→
→
→
Available
Available
Available
Available
Library
manual
Simulation
example
Available
Available
Available
Available
Available
Available
→
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Available
Available
Available
Available
Available
Available
Available
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Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
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Available
Available
Available
Available
Available
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Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
24/7 RF - Version 2 - 2017
Available
S-parameter data
Simulation Models (continued)
ADS model
Microwave Office® Model
Type
BLF988
BLF988S
BLF9G38LS-90P
BLL6H0514-25
BLL6H0514L-130
BLL6H0514LS-130
BLL6H1214-500
BLL6H1214L-250
BLL6H1214LS-250
BLL6H1214LS-500
BLL8H0514-25
BLL8H0514L-130
BLL8H0514LS-130
BLL8H1214L-250
BLL8H1214L-500
BLL8H1214LS-250
BLL8H1214LS-500
BLM7G1822S-20PB
BLM7G1822S-20PBG
BLM7G1822S-40PBG
BLM8G0710S-30PB
BLP05H6110XR
BLP05H6150XR
BLP05H6250XR
BLP05H6350XR
BLP05H635XR
BLP05H6700XR
BLP05H6700XRG
BLP05H675XR
BLP05M7200
BLP10H603
BLP10H605
BLP10H610
BLP10H6120P
BLP10H660P
BLP10H690P
BLP15M7160P
BLP27M810
BLP35M805
BLP7G07S-140P
BLP7G22-05
BLP7G22-10
BLP8G10S-270PW
BLP8G10S-45PG
BLP8G20S-80P
BLP8G21S-160PV
BLP8G27-10
BLP8G27-5
BLS6G2735L-30
BLS6G2735LS-30
BLS6G3135-120
BLS6G3135-20
BLS6G3135S-120
BLS6G3135S-20
BLS7G2729L-350P
BLS7G2729LS-350P
BLS7G2730L-200P
BLS7G2730LS-200P
BLS8G2731L-400P
ADS-2012
ADS-2015
ADS-2016
→
→
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→
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→
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→
→
→
→
→
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Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
→
Available
→
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→
→
→
→
→
→
→
→
→
→
→
→
→
→
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
→
→
→
→
→
→
→
→
→
→
→
→
→
→
→
→
→
→
→
→
→
→
→
→
→
→
→
→
→
→
→
→
→
→
→
→
→
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Library
manual
Simulation
example
S-parameter data
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Design Support
4.1
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
24/7 RF - Version 2 - 2017
75
4.1
Simulation Models (continued)
ADS model
Microwave Office® Model
Type
BLS8G2731LS-400P
BLS9G2729L-350
BLS9G2729LS-350
BLS9G2731L-400
BLS9G2731LS-400
BLS9G2735L-50
BLS9G2735LS-50
BLS9G2934L-400
BLS9G2934LS-400
BLS9G3135L-400
BLS9G3135LS-400
CLF1G0035-100
CLF1G0035-100P
CLF1G0035-200P
CLF1G0035-50
CLF1G0035S-100
CLF1G0035S-100P
CLF1G0035S-200P
CLF1G0035S-50
CLF1G0060-10
CLF1G0060-30
CLF1G0060S-10
CLF1G0060S-30
76
ADS-2012
ADS-2015
ADS-2016
→
→
→
→
→
→
→
→
→
→
→
→
Available
→
→
→
→
→
→
→
→
→
→
→
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
→
→
→
→
→
→
Available
Available
Available
→
→
→
→
→
→
→
→
→
→
→
→
Available
Available
Available
Available
Available
Available
24/7 RF - Version 2 - 2017
Library
manual
S-parameter data
Simulation
example
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
50V_330mA
50V_340mA
50V_640mA
50V_150mA
50V_330mA
50V_340mA
50V_640mA
50V_150mA
50V_20mA
50V_50mA
50V_20mA
50V_50mA
5. Replacements
Ampleon Discontinued Types versus Ampleon Replacement Types in Alphabetical Order by Discontinued Type
Ampleon replacement type = same package
Ampleon functional replacement type = same functional replacement in a different package
Ampleon
discontinued type
Package
Ampleon
replacement type
Ampleon
functonal replacement type
BLA0912-250
BLA0912-250R
BLA1011-10
BLA1011-2
BLA1011-200
BLA1011-200R
BLA1011-300
BLA1011S-200
BLA1011S-200R
BLC8G24LS-240AV
BLC8G27LS-245AV
BLC9G27LS-150AV
BLD6G21L-50
BLD6G21LS-50
BLD6G22L-50
BLD6G22LS-50
BLF1043
BLF1046
BLF145
BLF147
BLF175
BLF177
BLF1822-10
BLF2043
BLF2043F
BLF2045
BLF242
BLF244
BLF245
BLF245B
BLF246
BLF246B
BLF248
BLF278
BLF278/01
BLF346
BLF368
BLF369
BLF3G21-30
BLF3G21-6
BLF3G22-30
BLF404
BLF521
BLF542
BLF544
BLF546
BLF548
BLF647
BLF6G10-135RN
BLF6G10-160RN
SOT502A
SOT502A
SOT467C
SOT538A
SOT502A
SOT502A
SOT957A
SOT502B
SOT502B
SOT1252-1
SOT1251-2
SOT1275-1
SOT1130A
SOT1130B
SOT1130A
SOT1130B
SOT538A
SOT467C
SOT123A
SOT121B
SOT123A
SOT121B
SOT467C
SOT538A
SOT467C
SOT467C
SOT123A
SOT123A
SOT123A
SOT279A
SOT121B
SOT161A
SOT262A1
SOT262A1
SOT262A1
SOT119A
SOT262A1
SOT800-2
SOT467C
SOT538A
SOT608A
SOT409A
SOT172D
SOT171A
SOT171A
SOT268A
SOT262A2
SOT540A
SOT502A
SOT502A
BLC8G24LS-241AV
BLC8G27LS-240AV
BLC9G27LS-151AV
BLF8G10L-160
BLA6H0912-500/BLA6H0912L-1000
BLA6H0912-500/BLA6H0912L-1000
BLL8H0514-25
BLL8H0514-25
BLA6G1011LS-200R
BLA6G1011LS-200R
BLA8G1011L-200
BLA6G1011LS-200R
BLA6G1011LS-200R
BLM8D1822S-50PBG
BLM8D1822S-50PBG
BLM8D1822S-50PBG
BLM8D1822S-50PBG
BLP27M810
BLF642
BLF642/BLP05H635XR
BLP647P/BLP05H6150XR
BLF182XR/BLP05H6150XR
BLF182XR/BLP05H6150XR
BLP8G27-10
BLP8G27-10
BLP27M810
Replacements
BLP35M805
BLF640/BLF642
BLF642/BLP05H635XR
BLF642/BLP05H635XR
BLF645/BLF642
BLF645/BLF642
BLF183XR/BLP05H6350XR
BLF183XR/BLP05H6350XR
BLF183XR/BLP05H6350XR
BLF642/BLP05H635XR
BLF183XR/BLP05H6350XR
BLF184XR/BLP05H6700XR
BLF642/BLP27M810
BLP35M805
BLP10H603BLP10H605//BLP35M805
BLP10H603/BLP35M805
BLP35M805
BLF642/BLP05H635XR
BLF645
BLF647P/BLP05H6150XR
BLF647P/BLP05H6150XR/BLP10H6120P
BLP8G10S-270PW
-
24/7 RF - Version 2 - 2017
77
Ampleon Discontinued Types versus Ampleon Replacement Types in Alphabetical Order by Discontinued Type
Ampleon replacement type = same package
Ampleon functional replacement type = same functional replacement in a different package
78
Ampleon
discontinued type
Package
BLF6G10-200RN
BLF6G10-45
BLF6G10L-260PRN
BLF6G10L-40BRN
BLF6G10LS-135RN
BLF6G10LS-160RN
BLF6G10LS-260PRN
BLF6G10S-45
BLF6G15L-250PBRN
BLF6G15L-40BRN
BLF6G15L-40RN
BLF6G15LS-40RN
BLF6G20-110
BLF6G20-180PN
BLF6G20-180RN
BLF6G20-230PRN
BLF6G20-40
BLF6G20-75
BLF6G20LS-110
BLF6G20LS-140
BLF6G20LS-180RN
BLF6G20LS-75
BLF6G20S-45
BLF6G22-180PN
BLF6G22-180RN
BLF6G22L-40BN
BLF6G22L-40P
BLF6G22LS-130
BLF6G22LS-180PN
BLF6G22LS-180RN
BLF6G22LS-40BN
BLF6G22LS-75
BLF6G22S-45
BLF6G27-10
BLF6G27-45
BLF6G27L-40P
BLF6G27LS-135
BLF6G27LS-50BN
BLF6G27S-45
BLF6G38-100
BLF6G38-25
BLF6G38-50
BLF6G38LS-100
BLF6H10L-160
BLF7G10L-250
BLF7G15LS-200
BLF7G15LS-300P
BLF7G20L-200
BLF7G20L-250P
BLF7G20L-90P
BLF7G20LS-140P
SOT502A
SOT608A
SOT539A
SOT1112A
SOT502B
SOT502B
SOT539B
SOT608B
SOT1110A
SOT1112A
SOT1135A
SOT1135B
SOT502A
SOT539A
SOT502A
SOT539A
SOT608A
SOT502A
SOT502B
SOT502B
SOT502B
SOT502B
SOT608B
SOT539A
SOT502A
SOT1112A
SOT1121A
SOT502B
SOT539B
SOT502B
SOT1112B
SOT502B
SOT608B
SOT975B
SOT608A
SOT1121A
SOT502B
SOT1112B
SOT608B
SOT502A
SOT608A
SOT502A
SOT502B
SOT467C
SOT502A
SOT502B
SOT539B
SOT502A
SOT539A
SOT1121A
SOT1121B
24/7 RF - Version 2 - 2017
Ampleon
replacement type
Ampleon
functonal replacement type
-
BLP8G10S-200P
BLP8G10S-45P
BLP8G10S-270PW
BLP8G10S-45P
BLF8G10LS-160
BLF8G10LS-160
BLP8G10S-270PW
BLP8G10S-45P
BLC9G15XS-400AVT
BLM7G1822S-40PB
BLM7G1822S-40PB
BLM7G1822S-40PB
BLC9G20LS-120V
BLC9G20LS-160V
BLC9G20LS-160V
BLF8G20LS-230V
BLM7G1822S-40PB
BLM7G1822S-80PB
BLC9G20LS-120V
BLC9G20LS-160V
BLC9G20LS-160V
BLM7G1822S-40PB
BLM7G1822S-80PB
BLF8G22LS-220
BLF8G22LS-220
BLM7G1822S-40PB
BLM7G1822S-40PB
BLF8G22LS-140
BLF8G22LS-200V
BLF8G22LS-220
BLM7G1822S-40PB
BLM7G1822S-80PB
BLM7G1822S-40PB
BLP8G27-10
BLF6G27LS-40P
BLF6G27LS-40P
BLF6G27LS-40P
BLF6G27LS-40P
BLF9G38LS-90P
BLF6G38S-25
BLF6G38LS-50
BLF9G38LS-90P
BLF6H10LS-160
BLP8G10S-270PW
BLC9G15LS-400AVT
BLC9G15LS-400AVT
BLF8G20LS-200V
BLC10G20LS-240PV T
BLM7G1822s-80PB
BLC8G21LS-160AV
BLF8G27LS-140
-
Ampleon Discontinued Types versus Ampleon Replacement Types in Alphabetical Order by Discontinued Type
Ampleon
discontinued type
Package
Ampleon
replacement type
Ampleon
functonal replacement type
BLF7G21L-160P
BLF7G21LS-160
BLF7G22L-130
BLF7G22L-160
BLF7G22L-200
BLF7G22L-250P
BLF7G22LS-130
BLF7G22LS-160
BLF7G24L-100
BLF7G24L-140
BLF7G24L-160P
BLF7G27L-100
BLF7G27L-140
BLF7G27L-150P
BLF7G27L-200PB
BLF7G27L-75P
BLF7G27L-90P
BLF7G27LS-150P
BLF7G27LS-75P
BLF7G27LS-90P
BLF861A
BLF872
BLF878
BLF888
BLF8G20LS-140GV
BLF8G20LS-140V
BLF8G20LS-200V
BLF8G20LS-260A
BLF8G22LS-160BV
BLF8G24L-200P
BLF8G24LS-200P
BLF8G27LS-100P
BLL1214-250
BLL1214-250R
BLL1214-35
BLL6G1214LS-250
BLM6G10-30
BLM6G10-30G
BLM6G22-30
BLM6G22-30G
BLM7G22S-60PBG
BLM7G24S-30BG
BLS2731-110
BLS2731-20
BLS2731-50
BLS2933-100
BLW96/01
MX0912B251Y
MX0912B351Y
MZ0912B100Y
MZ0912B50Y
SOT1121A
SOT1121B
SOT502A
SOT502A
SOT502A
SOT539A
SOT502B
SOT502B
SOT502A
SOT502A
SOT539A
SOT502A
SOT502A
SOT539A
SOT1110A
SOT1121A
SOT1121A
SOT539B
SOT1121B
SOT1121B
SOT540A
SOT800-1
SOT979A
SOT979A
SOT1244C
SOT1244B
SOT1120B
SOT539B
SOT1120B
SOT539A
SOT539B
SOT1121B
SOT502A
SOT502A
SOT467C
SOT502B
SOT834-1
SOT822-1
SOT834-1
SOT822-1
SOT1212-1
SOT1212-1
SOT423A
SOT445C
SOT422A
SOT502A
SOT121B
SOT439A
SOT439A
SOT443A
SOT443A
BLP8G21S-160PV
-
BLC8G21LS-160AV
BLC9G20LS-160V
BLF8G22LS-140
BLC9G22LS-160VT
BLF8G22LS-205V
BLC10G22LS-240PVT
BLF8G22LS-140
BLC9G22LS-160VT
BLF8G24LS-100
BLF8G24LS-140
BLC9G27LS-151AV
BLF8G27LS-100
BLF8G27LS-140
BLC9G27LS-151AV
BLC8G27LS-210PV
BLC8G27LS-60AV
BLC8G27LS-100AV
BLC9G27LS-151AV
BLC8G27LS-60AV
BLC8G27LS-100AV
BLF888A/BLF888B
BLF888A/BLF888B
BLF888A/BLF888B
BLF888A/BLF888B
BLF9G20LS-160V
BLF9G20LS-160V
BLFG20LS-230V
BLC8G20LS-310AV
BLC9G22LS-160VT
BLC8G24LS-241AV
BLC8G24LS-241AV
BLC8G27LS-100AV
BLL6G1214L-250
BLL6G1214L-250
BLL8H0514-25
BLL6G1214L-250
BLM8G0710S-30PB
BLM8G0710S-30PB
BLM7G1822S-40PB
BLM7G1822S-40PBG
BLM8D1822S-50PBG
BLM9D2327-25B
BLS6G2731-120
BLS6G2735L-30
BLS6G2735L-30
BLS6G2933S-130
BLF182XR/BLP05H6250XR
BLL6G1214L-250
BLL6G1214L-250
BLL8H0514L-130
BLL8H0514-25
24/7 RF - Version 2 - 2017
Replacements
Ampleon replacement type = same package
Ampleon functional replacement type = same functional replacement in a different package
79
6. Packaging and Packing
6.1 Packaging
Ampleon package overview: www.ampleon.com/packages
Air-Cavity Ceramic (ACC) Packages (L x W x H (mm))*
SOT467B
SOT467C
SOT502A
SOT502B
SOT502C
SOT502D
(9.7 x 5.8 x max 4.7 (mm))
(20.3 x 5.8 x max 4.7 (mm))
(34.0 x 9.8 x max 4.7 (mm))
(20.6 x 9.8 x max 4.7 (mm))
(20.6 x 9.8 x max 4.7 (mm))
(34.0 x 9.8 x max 4.7 (mm))
SOT502F
SOT538A
SOT539A
SOT539B
SOT540A
SOT608A
(34.0 x 9.8 x max 4.7 (mm))
(5.5 x 4.1 x max 2.4 (mm))
(41.2 x 10.2 x max 4.7 (mm))
(32.3 x 10.2 x max 4.7 (mm))
(34 x 9.8 x max 5.8 mm))
(20.3 x 10.2 x max 4.6 (mm))
SOT608B
SOT634A
SOT975B
SOT975C
SOT922-1
SOT1120B
(10.2 x 10.2 x max 4.6 (mm))
(34 x 13.7 x max 4.8 (mm))
(7.1 x 6.9 x max 3.6 (mm))
(7.1 x 6.9 x max 3.6 ((mm))
(17.6 x 9.4 x max 4.2 (mm))
(20.6 x 9.8 x max 4.8 (mm))
SOT1121A
SOT1121B
SOT1121E
SOT1135A
SOT1135B
SOT1214A
(34.0 x 9.8 x max 4.7 (mm))
(20.6 x 9.8 x max 4.7 (mm))
(20.6 x 9.8 x max 4.7 (mm))
(20.3 x 9.8 x max 4.7 (mm))
(9.8 x 9.8 x max 4.7 (mm))
(34.0 x 9.8 x max 4.7 (mm))
SOT1214B
SOT1214C
SOT1227A
SOT1227B
SOT1228A
SOT1228B
(20.6 x 9.8 x max 4.7 (mm))
(34 x 9.8 x max 4.7 mm))
(14.0 x 4.1 x max 3.7 (mm))
(5.1 x 4.1 x max 3.7 (mm))
(29.0 x 5.8 x max 5.2 (mm))
(17.3 x 5.8 x max 5.2 (mm))
SOT1239B
SOT1242B
SOT1242C
SOT1244B
SOT1244C
SOT1248C
(20.6 x 9.8 x max 4.8 (mm))
(32.3 x 10.2 x max 5.5 (mm))
(32.3 x 10.2 x max 5.5 (mm))
(20.6 x 9.8 x max 4.8 (mm))
(20.6 x 9.8 x max 4.8 (mm))
(32.3 x 10.2 x max 5.5 (mm))
* Not drawn to scale
80
24/7 RF - Version 2 - 2017
Air-Cavity Plastic (ACP) Packages (L x W x H (mm))*
SOT1250-1
SOT1251-3
SOT1252-7
SOT1258-1
SOT1258-3
SO1258-7
(32.2 x 10.1 x max 4.5 (mm))
(32.2 x 10.1 x max 4.5 (mm))
(32.2 x 10.1 x max 4.5 (mm))
(32.2 x 10.1 x max 4.5 (mm))
(34.0 x 9.8 x max. 4.7 (mm))
(34.0 x 9.8 x max. 4.7 (mm))
SOT1270-1
SOT1271-3
SOT1273-7
SOT1275-1
SOT1275-3
(20.6 x 9.8 x max 3.7 (mm))
(20.6 x 9.8 x max 3.7 (mm))
(20.6 x 9.8 x max 3.7 (mm))
(20.6 x 9.8 x max 3.7 (mm))
(20.6 x 9.8 x max 3.7 (mm))
SOT1138-2
SOT1179-2
SOT1204-2
SOT1211-1
SOT1211-2
SOT1212-1
(20.6 x 10 x max 3.9 mm))
(6 x 4 x max 1 (mm))
(20.6 x 10 x max 3.9 (mm))
(20.6 x 10 x max 3.9 (mm))
(20.6 x 10 x max 3.9 (mm))
(20.6 x 10 x max 3.9 (mm))
SOT212-2
SOT1221-2
SOT1223-2
SOT1224-2
SOT1352-1
SOT1371-1
(20.6 x 10 x max 3.9 (mm))
(20.6 x 10 x max 3.9 (mm))
(20.6 x 10 x max 3.9 (mm))
(20.6 x 10 x max 3.9 (mm))
(6 x 5 x max 1 (mm))
(6 x 4 x max 1 (mm))
SOT1462-1
SOT1462-3
SOT1482-1
SOT1483-1
(8 x 8 x max. 2.1 (mm))
(8 x 8 x max. 2.1 (mm))
(10.67 x 6.1 x max. 2.03 (mm))
(10.67 x 6.1 x max. 2.08 (mm))
Packaging and
Packing
Overmolded Plastic (OMP) Packages (L x W x H (mm))*
* Not drawn to scale
24/7 RF - Version 2 - 2017
81
6.2 Packing
Packing Quantities per Package with Relevant Ordering Codes
82
Package
Package
dimensions (mm)
Packing quantity
Product 12NC ending
Packing method
SOT467B
9.7 x 5.8 x 4.7
60
400
112
118
Blister, tray
Tape and reel
SOT467C
20.3 x 5.8 x 4.7
60
112
Blister, tray
SOT502A
34.0 x 9.8 x 4.7
60
100
300
112
118
135
Blister, tray
Tape and reel
Reel
SOT502B
20.6 x 9.8 x 4.7
60
100
112
118
Blister, tray
Tape and reel
SOT502C
20.6 x 9.8 x 4.7
60
112
Blister, tray
SOT502D
34.0 x 9.8 x 4.7
60
112
Blister, tray
SOT502E
20.6 x 9.8 x 4.7
60
112
Blister, tray
SOT502F
34.0 x 9.8 x 4.7
60
112
Blister, tray
SOT538A
5.5 x 4.1 x 2.4
160
500
112
135
Blister, tray
Reel
SOT539A
41.2 x 10.2 x 4.7
60
100
112
118
Blister, tray
Tape and reel
SOT539B
32.3 x 10.2 x 4.7
60
100
112
118
Blister, tray
Tape and reel
SOT540A
34.0 x 9.8 x 5.4
60
112
Blister, tray
SOT608A
20.3 x 10.2 x 4.2
60
300
112
135
Blister, tray
Reel
SOT608B
10.2 x 10.16 x 4.2
60
100
300
112
118
135
Blister, tray
Tape and reel
Reel
SOT634A
34.0 x 13.7 x 4.8
60
112
Blister, tray
SOT922-1
17.6 x 9.4 x 3.9
60
112
Blister, tray
SOT975B
7.1 x 6.9 x 3.6
100
180
118
112
Tape and reel
Blister, tray
SOT975C
7.1 x 6.9 x 3.6
100
180
118
112
Tape and reel
Blister, tray
SOT1110A
41.2 x 10.2 x 4.7
60
100
112
118
Blister, tray
Tape and reel
SOT1110B
32.3 x 10.2 x 5.5
60
100
112
118
Blister, tray
Tape and reel
SOT1112A
20.3 x 9.8 x 4.7
60
100
112
118
Blister, tray
Tape and reel
24/7 RF - Version 2 - 2017
Package family
Air-Cavity
Ceramic (ACC)
Packing Quantities per Package with Relevant Ordering Codes (continued)
Package
dimensions (mm)
Packing quantity
Product 12NC ending
Packing method
SOT1120B
20.6 x 9.8 x 4.8
60
100
180
112
118
134
Blister, tray
Tape and reel
Reel
SOT1121A
34.0 x 9.8 x 4.7
60
100
112
118
Blister, tray
Tape and reel
SOT1121B
20.6 x 9.8 x 4.7
60
100
112
118
Blister,tray
Tape and reel
SOT1121E
20.6 x 9.8 x 4.7
100
118
Tape and reel
SOT1135A
20.3 x 9.8 x 4.7
60
100
112
118
Blister, tray
Tape and reel
SOT1135B
9.8 x 9.8 x 4.7
60
100
112
118
Blister, tray
Tape and reel
SOT1214A
34.0 x 9.8 x 4.7
60
112
Blister, tray
SOT1214B
20.6 x 9.8 x 4.7
60
112
Blister, tray
SOT1214C
20.6 x 9.8 x 4.7
96
100
127
118
Tube
Tape and reel
SOT1227A
14.0 x 4.1 x 3.7
60
112
Blister, tray
SOT1227B
5.1 x 4.1 x 3.7
60
112
Blister, tray
SOT1228A
29.0 x 5.8 x 5.2
60
112
Blister, tray
SOT1228B
17.3 x 5.8 x 5.2
60
112
Blister, tray
SOT1239B
20.6 x 9.8 x 4.8
60
60
100
112
115
118
Blister, tray
Tape and reel
Tape and reel
SOT1242B
32.3 x 10.2 x 5.5
60
100
112
118
Blister, tray
Tape and reel
SOT1242C
32.2 x 10.2 x 4.9
60
100
127
115
Tube
Tape and reel
SOT1244B
20.6 x 9.8 x 4.8
60
100
112
118
Blister, tray
Tape and reel
SOT1244C
20.6 x 9.8 x 4.8
96
100
127
118
Tube
Tape and reel
SOT1248C
32.3 x 10.2 x 5.5
100
118
Tape and reel
SOT1250-1
32.3 x 10.1 x 4.5
60
100
112
118
Blister, tray
Tape and reel
SOT1251-2
32.3 x 10.1 x 4.5
60
100
517
518
Blister, tray
Tape and reel
SOT1251-3
32.3 x 10.1 x 4.5
60
100
517
518
Blister, tray
Tape and reel
Package family
Air-Cavity
Ceramic (ACC)
Packaging and
Packing
Package
Air-Cavity
Plastic (ACP)
24/7 RF - Version 2 - 2017
83
Packing Quantities per Package with Relevant Ordering Codes (continued)
Package
dimensions (mm)
Packing quantity
Product 12NC ending
Packing method
SOT1252-1
32.3 x 10.1 x 4.5
60
60
100
100
112
517
118
518
Blister, tray
Blister, tray
Tape and reel
Tape and reel
SOT1258-3
32.2 x 10.1 x 4.5
60
100
517
518
Blister, tray
Tape and reel
Package
84
SOT1258-7
32.2 x 10.1 x 4.5
60
100
517
518
Blister, tray
Tape and reel
SOT1270-1
20.6 x 9.8 x 3.7
60
517
Blister, tray
SOT1275-1
20.6 x 9.8 x 3.7
60
100
517
518
Blister, tray
Tape and reel
SOT822-1
15.9 x 11.0 x 3.5
100
180
500
118
127
135
Tape and reel
Tube
Reel
SOT1138-2
20.6 x 10.0 x 3.9
100
118
Tape and reel
SOT1179-2
6.0 x 4.0 x 1.0
500
515
Reel
SOT1204-2
20.6 x 10.0 x 3.9
100
518
Tape and reel
SOT1211-2
20.6 x 10.0 x 3.9
100
118
Tape and reel
SOT1212-2
20.6 x 10.0 x 3.9
100
518
Tape and reel
SOT1221-2
20.6 x 10 x 3.9
100
518
Tape and reel
SOT1223-2
20.6 x 10.0 x 3.9
100
118
Tape and reel
SOT1224-2
20.6 x 10.0 x 3.9
100
518
Tape and reel
SOT1352-1
6.0 x 5.0 x 1.0
60
500
531
515
Tape and reel
Reel
24/7 RF - Version 2 - 2017
Package family
Air-Cavity
Plastic (ACP)
Overmolded
Plastic (OMP)
6.3
Marking Codes
Marking code
Type
Package
B1025
B1025
B1050
B1050
B1000
B1000
B2550
B2500
B27810
B35805
B2250
B2200
B2700
B2750
BLP10H603
BLP10H603
BLP10H605
BLP10H605
BLP10H610
BLP10H610
BLP25M705
BLP25M710
BLP27M810
BLP35M805
BLP7G22-05
BLP7G22-10
BLP8G27-10
BLP8G27-5
SOT1352-1
SOT1352-1
SOT1352-1
SOT1352-1
SOT1352-1
SOT1352-1
SOT1179-2
SOT1179-2
SOT1371-1
SOT1371-1
SOT1179-2
SOT1179-2
SOT1371-1
SOT1371-1
Packaging and
Packing
In general, device marking includes the part number, some manufacturing information and the Ampleon's logo. If packages
are too small for the full-length part number, a shorter, coded part number (called the "marking code") is used instead.
To save space, the marking code is used in place of the manufacturing-site code. The full-length part number is always
printed on the packing label on the box or bulk-pack in which the devices are supplied.
24/7 RF - Version 2 - 2017
85
7. Abbreviations
Abbreviations
A&D
AC
ACC
ACP
ASYM
Bcst/ISM
Broadband
CDMA
CW
dB
DC
DEV
EDGE
FM
Freq
GaAs
GaN
Gen
GHz
GNSS
HD
HDTV
HEMT
HF
HPA
HVQFN
IC
ISM
kW
LDMOS
LTE
mA
MHz
MIMO
MMIC
MRI
OMP
PA
PAD
RF
RFS
RoHS
SOT
SYM
TDMA
TD-SCDMA
UHF
UWB
V
VDMOS
VHF
WCDMA
WiFi
WiMAX
XR
86
Aerospace and Defense
Alternating Current
Air-Cavity Ceramic package
Air-Cavity Plastic package
ASYMmetrical design of Doherty (main and peak devices are different)
Broadcast/Industrial, Scientific, Medical
Broadband RF power GaN HEMT
Code Division Multiple Access
Continuous Wave
decibel
Direct Current
Development
Enhanced Data Rates for GSM Evolution
Frequency Modulation
Frequency
Gallium Arsenide
Gallium Nitride
Generation
GigaHertz
Global Navigation Satellite System
High-Definition
High-Definition Television
High-Electron Mobility Transistor
High Frequency (3 - 30 MHz)
High Power Amplifier
Plastic Thermally Enhanced Very thin Quad Flat package with no leads
Integrated Circuit
Industrial, Scientific, and Medical (reserved frequency bands)
kiloWatt
Laterally Diffused Metal-Oxide-Semiconductor
Long-Term Evolution
milliamp
MegaHertz
Multiple-input and multiple-output, a method for multiplying the capacity of a radio link using multiple transmit
and receive antennas to exploit multipath propagation
Monolithic Microwave Integrated Circuit
Magnetic Resonance Imaging
Overmolded Plastic
Power Amplifier
Single-Package Asymmetric Doherty
Radio Frequency
Released For Supply
Restriction of Hazardous Substances
Small-Outline Transistor
Symmetrical design of Doherty (main and peak devices are the same type of transistor)
Time Division Multiple Access
Time Division-Synchronous Code Division Multiple Access
Ultra High Frequency (470 - 860 MHz)
Ultra-Wideband
Volt
Vertical Double-diffused Metal Oxide Semiconductor
Very High Frequency (30 - 300 MHz)
Wideband Code Division Multiple Access
Wireless Fidelity
Worldwide interoperability for Microwave Access
eXtremely Rugged
24/7 RF - Version 2 - 2017
8. Contact
We share the passion for RF technology which is what we radiate to our customers, suppliers and partners. Whether we are
initiating, discovering, developing, designing, marketing or supporting, our work is ultimately aimed at delivering our best and
achieving outstanding results.
While we strive for sharing information about our portfolio and our competence, you might still have questions or do need our
support for your specific challenge.
Contact
Please feel free to contact our experts across the globe in a location closest to you (www.ampleon.com/about/worldwidelocations) by accessing our contact window (www.ampleon.com/contact) for topics related to sales inquiries, quality,
application/simulation/modelling or other.
24/7 RF - Version 2 - 2017
87
9. Product Index
Type
Portfolio
section
Type
Portfolio
section
Type
Portfolio
section
Type
Portfolio
section
BLA6G1011-200R
BLA6G1011L-200RG
BLA6G1011LS-200RG
BLA6H0912-500
BLA6H0912L-1000
BLA6H0912LS-1000
BLA6H1011-600
BLA8G1011L-300
BLA8G1011L-300G
BLA8G1011LS-300
BLA8G1011LS-300G
BLA8H0910L-500
BLA8H0910LS-500
BLA9G1011L-300
BLA9G1011L-300G
BLA9G1011LS-300
BLA9G1011LS-300G
BLC10G18XS-320AVT
BLC10G20LS-240PWT
BLC10G22LS-240PVT
BLC10M6XS200
BLC2425M8LS300P
BLC2425M9LS250
BLC2425M9LS700PV
BLC8G09XS-400AVT
BLC8G20LS-310AV
BLC8G20LS-400AV
BLC8G21LS-160AV
BLC8G22LS-450AV
BLC8G24LS-241AV
BLC8G27LS-100AV
BLC8G27LS-140AV
BLC8G27LS-160AV
BLC8G27LS-180AV
BLC8G27LS-210PV
BLC8G27LS-240AV
BLC8G27LS-60AV
BLC9G15LS-400AVT
BLC9G15XS-400AVT
BLC9G20LS-120V
BLC9G20LS-160PV
BLC9G20LS-240PV
BLC9G20LS-361AVT
BLC9G20LS-470AVT
BLC9G20XS-160AV
BLC9G20XS-400AVT
BLC9G20XS-550AVT
BLC9G21LS-60AV
BLC9G22LS-160VT
BLC9G22XS-400AVT
BLC9G24XS-170AV
BLC9G27LS-151AV
BLC9G27XS-380AVT
BLC9H10XS-300P
BLC9H10XS-350A
BLC9H10XS-400A
BLC9H10XS-400P
BLC9H10XS-600A
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.2
3.2
3.2
3.5
3.5
3.5
3.5
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
BLC9H10XS-60P
BLC9H10XS-800P
BLF0910H6L500
BLF0910H6LS500
BLF10H6600P
BLF10H6600PS
BLF10M6135
BLF10M6160
BLF10M6200
BLF10M6LS135
BLF10M6LS160
BLF10M6LS200
BLF1721M8LS200
BLF174XR
BLF174XRS
BLF178P
BLF178XR
BLF178XRS
BLF182XR
BLF182XRS
BLF183XR
BLF183XRS
BLF184XR
BLF184XRG
BLF184XRS
BLF188XR
BLF188XRG
BLF188XRS
BLF189XRA
BLF189XRAS
BLF189XRB
BLF189XRBS
BLF2324M8LS200P
BLF2425M6L180P
BLF2425M6LS180P
BLF2425M7L100
BLF2425M7L140
BLF2425M7L250P
BLF2425M7LS100
BLF2425M7LS140
BLF2425M7LS250P
BLF2425M8L140
BLF2425M8LS140
BLF2425M9L30
BLF2425M9LS140
BLF2425M9LS30
BLF25M612
BLF25M612G
BLF571
BLF573
BLF573S
BLF574
BLF574XR
BLF574XRS
BLF578
BLF578XR
BLF578XRS
BLF640
3.2
3.2
3.5
3.5
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.4
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
BLF642
BLF644P
BLF645
BLF647P
BLF647PS
BLF6G13L-250P
BLF6G13LS-250P
BLF6G13LS-250PG
BLF6G15L-500H
BLF6G15LS-500H
BLF6G21-10G
BLF6G27LS-40P
BLF6G27LS-40PG
BLF6G38LS-50
BLF6G38S-25
BLF7G10LS-250
BLF7G20LS-200
BLF7G20LS-250P
BLF7G20LS-90P
BLF7G22LS-200
BLF7G22LS-250P
BLF7G24LS-100
BLF7G24LS-140
BLF7G27LS-100
BLF7G27LS-140
BLF871
BLF871S
BLF879P
BLF879PS
BLF881
BLF881S
BLF882
BLF882S
BLF884P
BLF884PS
BLF888A
BLF888AS
BLF888B
BLF888BS
BLF888D
BLF888DS
BLF888E
BLF888ES
BLF898
BLF898S
BLF8G09LS-270GW
BLF8G09LS-270W
BLF8G09LS-400PGW
BLF8G09LS-400PW
BLF8G10L-160
BLF8G10LS-160
BLF8G10LS-160V
BLF8G10LS-270
BLF8G10LS-270GV
BLF8G10LS-270V
BLF8G10LS-300P
BLF8G19LS-170BV
BLF8G20LS-160V
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
BLF8G20LS-220
BLF8G20LS-230V
BLF8G20LS-400PGV
BLF8G20LS-400PV
BLF8G22LS-140
BLF8G22LS-200GV
BLF8G22LS-200V
BLF8G22LS-205V
BLF8G22LS-220
BLF8G22LS-240
BLF8G22LS-270
BLF8G22LS-270GV
BLF8G22LS-270V
BLF8G24LS-100GV
BLF8G24LS-100V
BLF8G24LS-150GV
BLF8G24LS-150V
BLF8G27LS-100
BLF8G27LS-100GV
BLF8G27LS-100V
BLF8G27LS-140
BLF8G27LS-140V
BLF8G27LS-150GV
BLF8G27LS-150V
BLF8G38LS-75V
BLF988
BLF988S
BLF9G20LS-160V
BLF9G38-10G
BLF9G38LS-90P
BLL6G1214L-250
BLL6H0514-25
BLL6H0514L-130
BLL6H0514LS-130
BLL6H1214-500
BLL6H1214L-250
BLL6H1214LS-250
BLL6H1214LS-500
BLL6H1214P2S-250
BLL8H0514-25
BLL8H0514L-130
BLL8H0514LS-130
BLL8H1214L-250
BLL8H1214L-500
BLL8H1214LS-250
BLL8H1214LS-500
BLL9G1214L-600
BLL9G1214LS-600
BLM2425M7S60P
BLM7G1822S-20PB
BLM7G1822S-20PBG
BLM7G1822S-40AB
BLM7G1822S-40ABG
BLM7G1822S-40PB
BLM7G1822S-40PBG
BLM7G1822S-80AB
BLM7G1822S-80ABG
BLM7G1822S-80PB
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.6
3.6
3.2
3.2
3.2
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.5
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
88
24/7 RF - Version 2 - 2017
Portfolio
section
Type
Portfolio
section
Type
Portfolio
section
BLM7G1822S-80PBG
BLM8D1822-25B
BLM8D1822S-50PB
BLM8D1822S-50PBG
BLM8G0710S-15PB
BLM8G0710S-15PBG
BLM8G0710S-30PB
BLM8G0710S-30PBG
BLM8G0710S-45AB
BLM8G0710S-45ABG
BLM8G0710S-60PB
BLM8G0710S-60PBG
BLM8G1822-20B
BLM9D2325-20AB
BLM9D2327-25B
BLM9D2527-20AB
BLP05H6110XR
BLP05H6110XRG
BLP05H6150XR
BLP05H6150XRG
BLP05H6250XR
BLP05H6250XRG
BLP05H6350XR
BLP05H6350XRG
BLP05H635XR
BLP05H635XRG
BLP05H6700XR
BLP05H6700XRG
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
BLP05H675XR
BLP05H675XRG
BLP05M7200
BLP10H603
BLP10H605
BLP10H610
BLP10H6120P
BLP10H6120PG
BLP10H630P
BLP10H630PG
BLP10H660P
BLP10H660PG
BLP10H690P
BLP10H690PG
BLP15M7160P
BLP25M705
BLP25M710
BLP27M810
BLP35M805
BLP7G22-05
BLP7G22-10
BLP8G05S-200
BLP8G05S-200G
BLP8G10S-270PW
BLP8G10S-45P
BLP8G10S-45PG
BLP8G21S-160PV
BLP8G27-10
3.3
3.3
3.5
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
BLP8G27-5
BLP9G0722-20
BLP9G0722-20G
BLP9H10S-30
BLS6G2731-120
BLS6G2731-6G
BLS6G2731S-120
BLS6G2731S-130
BLS6G2735L-30
BLS6G2735LS-30
BLS6G2933S-130
BLS6G3135-120
BLS6G3135-20
BLS6G3135S-120
BLS6G3135S-20
BLS7G2325L-105
BLS7G2729L-350P
BLS7G2729LS-350P
BLS7G2730L-200P
BLS7G2730LS-200P
BLS7G2933S-150
BLS7G3135L-350P
BLS7G3135LS-200
BLS7G3135LS-350P
BLS8G2731L-400P
BLS8G2731LS-400P
BLS9G2729L-350
BLS9G2729LS-350
3.2
3.2
3.2
3.2
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
Type
Portfolio
section
BLS9G2731L-400
BLS9G2731LS-400
BLS9G2735L-50
BLS9G2735LS-50
BLS9G2934L-400
BLS9G2934LS-400
BLS9G3135L-400
BLS9G3135LS-400
BLU6H0410L-600P
BLU6H0410LS-600P
BPS9G2933X-450
BPS9G2934X-400
BPS9G3135X-400
CLF1G0035-100
CLF1G0035-100P
CLF1G0035-200P
CLF1G0035-50
CLF1G0035S-100
CLF1G0035S-100P
CLF1G0035S-200P
CLF1G0035S-50
CLF1G0060-10
CLF1G0060-30
CLF1G0060S-10
CLF1G0060S-30
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
3.7
Product Index
Type
24/7 RF - Version 2 - 2017
89
Notes
90
24/7 RF - Version 2 - 2017
Notes
24/7 RF - Version 2 - 2017
91
© Ampleon Netherlands B.V. 2017
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document
does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher
for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
www.ampleon.com
Date of release: May 2017
Document identifier: AMP 247 2017 0531
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