BLF8G27LS-140V

24/7 RF Reference Book for High Performance RF Products Version 2 - 2017 The Leading Global Partner in RF Power Ampleon is a young and innovative company with 50 years of experience in RF Power. Furthermore, our technology and our drive in innovation Our name, derived from “amplify” (=enhance) and “eon” (=eternity), reflects the products we stand for and our commitment to “Amplify the future” white goods and industrial landscape with sustainable and of RF Power. have defined a new market segment for controlling heat and power: RF Energy, which enables us to improve the overall higher efficiency. Given our comprehensive line-up, we have set-out to exploit the full potential of data and energy transfer in RF. Global Footprint and Customer Proximity Solutions for a Variety of Segments With our headquarters in Nijmegen/Netherlands and We are a leading company in the segments of Mobile more than 1.250 employees worldwide, we are dedicated Broadband; Broadcast; Industrial, Scientific & Medical, to creating optimal value for our customers. In more than Air Traffic Control and Aerospace & Defense (LDMOS). 18 locations around the globe our international team of experts is always close to our customers and amplified by our core values of Focus, Excellence and Velocity. Our intention is to always bring our customers a significant step further with the help of outstanding RF power solutions. Technology and Innovations We leverage leading edge process technologies for higher performance (GaN, LDMOS) and cost-efficiency to deliver a leading portfolio of options for RF Power. Our product consistency is unprecedented and we drive innovations in traditional as well as new application areas. Comprehensive Support We build on decades of RF leadership and related application know-how. Our customers rely on our dedicated experts to help them solve their design challenges. We value high-quality long-term partnerships with our customers and thus create a clear competitive advantage. Amplify the future 2 24/7 RF - Version 2 - 2017 The second edition of 24/7 RF 24/7 RF is a synonym for our dedication to RF Power: 24 hours, 7 days a week. We are passionate about walking you through from a sketchy idea to a finished design. This is what we also reflect in this second edition by turning true pictures into the style of a medieval painting – a piece of artwork, just like our products. This latest edition of our reference book not only includes our recommended product portfolio but also links it to numerous applications it is best suited for. It features product highlights, describes technologies, reveals latest trends, shows explanatory diagrams, lists features and types, packaging and packing data. Beyond, you will find information about design support, cross references and replacements. We are convinced that 24/7 RF is the ultimate guide to anything you need to know about Ampleon’s High Performance RF products. 24/7 RF Web Page www.ampleon.com/24-7rf Enjoy reading! 24/7 RF - Version 2 - 2017 3 Contents 1. RF Applications����������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������7 1.1 Mobile Broadband�������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������7 1.1.1 Base Stations (all cellular standards and frequencies)��������������������������������������������������������������������������������������������������7 1.1.2 Small Cells������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 11 1.1.3 4.5G and Massive MIMO (multiple-input and multiple-output)������������������������������������������������������������������� 12 1.2 Broadcast������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 15 1.2.1 FM/HDR/DAB Radio������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 16 1.2.2 UHF/D-TV��������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 17 1.2.3 VHF/D-TV���������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 18 1.3 Industrial, Scientific and Medical (ISM)����������������������������������������������������������������������������������������������������������������������������������������������������������������21 1.3.1 CO2 Laser Exciters and Plasma Generators������������������������������������������������������������������������������������������������������������������������������� 22 1.3.2 Medical and Industrial Imaging������������������������������������������������������������������������������������������������������������������������������������������������������������������� 22 1.3.3 Particle Accelerators���������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 22 1.3.4 Instrumentation����������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 23 1.4 RF Energy��������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������27 1.4.1 RF Cooking�����������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������29 1.4.2 RF Lighting������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������ 31 1.4.3 RF Heating and Drying�����������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������32 1.4.4 RF Ignition�������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������33 1.5 Aerospace & Defense������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������35 1.5.1 Radar����������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������35 1.5.2 Electronic Counter Measures (ECM)������������������������������������������������������������������������������������������������������������������������������������������������������36 1.5.3 Military Communications Systems (Milcom)�����������������������������������������������������������������������������������������������������������������������������36 2. Technologies������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������41 2.1 Best-in-Class LDMOS to drive any RF Power Application��������������������������������������������������������������������������������������������������������� 41 2.2 Best-in-Class GaN for High Frequency Performance�������������������������������������������������������������������������������������������������������������������� 43 2.3 RF Power Transistor Packages������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 44 3. RF Product Portfolio���������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������47 3.1 New Products������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������47 3.2 RF Power Transistors for Mobile Broadband���������������������������������������������������������������������������������������������������������������������������������������������� 50 3.2.1 0.4 - 1.0 GHz LDMOS Transistors��������������������������������������������������������������������������������������������������������������������������������������������������������������� 50 3.2.2 1.3 - 1.7 GHz LDMOS Transistors����������������������������������������������������������������������������������������������������������������������������������������������������������������� 51 3.2.3 1.8 - 2.0 GHz LDMOS Transistors���������������������������������������������������������������������������������������������������������������������������������������������������������������� 51 3.2.4 2.0 - 2.2 GHz LDMOS Transistors��������������������������������������������������������������������������������������������������������������������������������������������������������������52 3.2.5 2.3 - 2.4 GHz LDMOS Transistors����������������������������������������������������������������������������������������������������������������������������������������������������������������53 3.2.6 2.5 - 2.7 GHz LDMOS Transistors����������������������������������������������������������������������������������������������������������������������������������������������������������������53 3.2.7 3.4 - 3.8 GHz LDMOS Transistors����������������������������������������������������������������������������������������������������������������������������������������������������������������53 3.2.8 LDMOS Doherty Designs��������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 54 3.2.9 Single Package Asymmetric Doherty (PAD) LDMOS Transistors�����������������������������������������������������������������55 3.2.10 Overmolded Plastic (OMP) LDMOS Transistors��������������������������������������������������������������������������������������������������������������������55 4 24/7 RF - Version 2 - 2017 3.2.11 3.2.12 3.2.13 3.2.14 MMIC LDMOS Transistors��������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������56 Small Cell LDMOS Transistors�������������������������������������������������������������������������������������������������������������������������������������������������������������������������56 MIMO LDMOS Transistors�������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������57 High Voltage LDMOS Transistors����������������������������������������������������������������������������������������������������������������������������������������������������������������57 3.3 RF Power Transistors for Broadcast������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 58 3.3.1 UHF Broadcast LDMOS Transistors (470 - 860 MHz)���������������������������������������������������������������������������������������������������� 58 3.3.2 HF / VHF Broadcast LDMOS Transistors (0 - 500 MHz)�����������������������������������������������������������������������������������������������59 3.3.3 HF / VHF Broadcast LDMOS Transistors (0 - 1600 MHz)������������������������������������������������������������������������������������������� 60 3.4 RF Power Transistors for ISM (Industrial, Scientific and Medical)����������������������������������������������������������������������������� 61 3.4.1 ISM LDMOS Transistors (0 - 500 MHz / XR)����������������������������������������������������������������������������������������������������������������������������������� 61 3.4.2 ISM LDMOS Transistors (0 - 1600 MHz)���������������������������������������������������������������������������������������������������������������������������������������������62 3.5 RF Power Transistors for RF Energy�������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 63 3.5.1 RF Energy LDMOS Transistors (0 - 500 MHz)���������������������������������������������������������������������������������������������������������������������������� 63 3.5.2 RF Energy LDMOS Transistors (915 MHz)�������������������������������������������������������������������������������������������������������������������������������������� 64 3.5.3 RF Energy LDMOS Transistors (2.45 GHz)������������������������������������������������������������������������������������������������������������������������������������� 64 3.6 RF Power Transistors for Aerospace & Defense�������������������������������������������������������������������������������������������������������������������������������������65 3.6.1 Avionics LDMOS Transistors������������������������������������������������������������������������������������������������������������������������������������������������������������������������������65 3.6.2 L-Band LDMOS Transistors��������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 66 3.6.3 S-Band LDMOS Transistors�������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 66 3.6.4 Sub-1 GHz LDMOS Transistors�����������������������������������������������������������������������������������������������������������������������������������������������������������������������67 3.6.5 Pallets and Modules������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������67 3.7 Gallium Nitride (GaN) RF Power Devices����������������������������������������������������������������������������������������������������������������������������������������������������������� 68 4. Design Support�������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������71 4.1 Simulation Models�������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 72 5. Replacements����������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 77 6. Packaging and Packing��������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 80 6.1 Packaging������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������ 80 6.2 Packing���������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������82 6.3 Marking Codes�������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 85 7. Abbreviations������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������ 86 8. Contact��������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������� 87 9. Product Index������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������������ 88 24/7 RF - Version 2 - 2017 5 6 24/7 RF - Version 2 - 2017 RF Applications Empowering Next Generation Mobile Communications 1. RF Applications 1.1 Mobile Broadband 1.1.1 Base Stations (all cellular standards and frequencies) RF Power Transistors for Base Stations Ampleon is the fastest growing supplier of LDMOS transistors for cellular infrastructure, leading the WCDMA and LTE markets. Our promise is unprecedented performance combined with best-in-class application support and constant innovation. Our design and manufacturing technologies ensure the best PA manufacturing yields in the industry. Ampleon's latest 9 th and 10 th generation LDMOS RF transistors offer the best solutions for all cellular frequency bands. With the current industry focus on cost reduction, we are extending our product portfolio with OMP and MMIC product families, which combine high performance with low cost. Single-Package Asymmetric Doherty (PAD) Transistors and MMICs, Integrated Doherty PAD devices offer the highest efficiency, smallest footprint, and best cost-effectiveness, and can deliver P1dB power levels up to 550 W. These products are DPD-friendly and developed to offer excellent video bandwidth. Our wide product portfolio covers frequency bands from 450 MHz to 3.8 GHz and average power levels from 2 to 80 W. Discrete single-stage transistors and asymmetric MMICs are available to suit most applications, from picocells to macrocells. We recently introduced 2-stage integrated Doherty IC’s to reduce the size of the PAs for power levels of up to 8 W average. They are available in symmetric and asymmetric versions to suit all applications, from driver (symmetric) to massive-MIMO and micro-cell (asymmetric). These Doherty amplifiers integrate both the splitter and combiner inside the package and necessitate minimum external circuitry to minimize cost and board space. Product Highlight: LDMOS PAD Transistor BLC10G18XS-320AVT The BLC10G18XS-320AVT is a 320 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Features • Excellent ruggedness • High-efficiency • Low thermal resistance providing excellent thermal stability • Lower output capacitance for improved performance in Doherty applications • Designed for low memory effects providing excellent digital pre- distortion capability • Integrated ESD protection 24/7 RF - Version 2 - 2017 7 Application Diagram of a Base Station DPD CFR DUC DDC Power Amplifier DVGA R F -BP PLL VC O Dual DAC 0 HPA 90 Transmitter Q IF -S AW J E DE C IF MPA DVGA Mixer+LO Tower Mounted Amplifier Tx Att. ADC LO Duplexer Digital F ront E nd (J E DE C ) Interface OBS AI / C PR I Digital Baseband J E DE C Interface IQ-Modulator I J E DE C Interface R F -S AW Dual ADC BP or LP Dual DVGA IF -S AW C lock Generator Jitter C leaner Dual Mixer PLL VC O LNA TX / R X 1 LNA +VGA Rx µC RX2 F ilter Unit LNA+VGA RF Power Recommended Products (1) Type Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) Type Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) BLP7G22-05 BLP8G27-5 BLP7G22-10 BLP8G27-10 BLF9G38-10G* BLM8G0710S-15PB(G) BLP9G0722-20(G) BLM8G1822-20B* BLM7G1822S-20PB(G) BLM9D2325-20AB* BLM9D2527-20AB BLM8D1822-25B* 700 700 700 700 3400 700 700 1800 1805 2300 2500 1800 2700 2700 2700 2700 3800 1000 2700 2200 2170 2500 2700 2200 5 5 10 10 10 15 (1) 20 20 (1) 20 (1) 20 (1) 20 (1) 25 (1) 28 28 28 28 28 28 28 28 28 28 28 28 BLM9D2327-25B* BLM8G0710S-30PB(G) BLP9H10S-30* BLM7G1822S-40ABG BLM7G1822S-40PB(G) BLM7G1822S-40AB BLM8G0710S-45AB(G) BLP8G10S-45PG BLP8G10S-45P BLM8D1822S-50PB(G) BLM8G0710S-60PB(G) BLC9H10XS-60P* 2300 700 700 1805 1805 1805 700 700 700 1805 700 700 2700 1000 1000 2170 2170 2170 1000 1000 1000 2170 1000 1000 25 (1) 30 (1) 30 40 (1) 40 (1) 40 (1) 45 (1) 45 45 50 (1) 60 (1) 60 (1) 28 28 50 28 28 28 28 28 28 28 28 50 P3dB * Check status in section 3.1, as this type is not yet released for mass production. For the complete product selection please see section 3.2 Product Highlight: 80 W LDMOS Packaged Asymmetric Doherty Power Transistor for Base Station Applications at Frequencies from 1805 MHz to 1880 MHz BLC9G20XS-550AVT A compact Doherty design based on three BLC9G20XS-550AVT devices achieves 48 % efficiency at 80 W average output power and 15.5 dB gain with a 2-carrier LTE signal. It has a peak power capability (P3dB) of 550 W at 28 V supply voltage. 8 24/7 RF - Version 2 - 2017 This Doherty is designed for LTE band 3 operation and is tailored to very high peak power and volume manufacturing with high yields without tuning. The PA features very high video bandwidth, enabling full-band operation. (1) Type Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) BLC8G27LS-60AV BLF8G38LS-75V BLM7G1822S-80ABG BLM7G1822S-80PBG BLM7G1822S-80PB BLM7G1822S-80AB BLF9G38LS-90P BLF8G24LS-100(G)V BLF8G27LS-100(G)V BLC8G27LS-100AV BLC9G20LS-120V BLF8G22LS-140 BLF8G27LS-140V BLC8G27LS-140AV BLF8G24LS-150(G)V BLF8G27LS-150(G)V BLC9G27LS-151AV BLF8G10LS-160V BLF8G10L(S)-160 BLF8G20LS-160V BLC9G20XS-160AV BLC9G20LS-160PV BLC8G21LS-160AV BLF9G20LS-160V BLP8G21S-160PV BLC8G27LS-160AV BLF8G19LS-170BV BLC9G24XS-170AV BLC8G27LS-180AV BLF8G22LS-200(G)V BLC8G27LS-210PV BLF8G22LS-205V BLF8G20LS-220 BLF8G22LS-220 BLF8G20LS-230V BLC9G20LS-240PV BLF8G22LS-240 BLC8G24LS-241AV 2300 3400 1805 1805 1805 1805 3400 2300 2500 2496 1805 2000 2600 2496 2300 2500 2496 925 920 1800 1805 1805 1805 1800 1880 2496 1800 2300 2496 2110 2500 2100 1800 2110 1800 1805 2110 2300 2690 3800 2170 2170 2170 2170 3600 2400 2700 2690 1995 2200 2700 2690 2400 2700 2690 960 960 2000 1880 2000 2025 2000 2025 2690 1990 2400 2690 2170 2700 2200 2000 2170 2000 1995 2170 2400 60 (1) 75 (1) 80 (1) 80 (1) 80 (1) 80 (1) 90 100 100 100 (1) 120 (1) 140 140 140 (1) 150 150 150 (1) 160 160 160 160 (1) 160 (1) 160 (1) 160 160 160 (1) 170 170 (1) 180 (1) 200 200 (1) 205 220 220 230 240 (1) 240 240 (1) 28 30 28 28 28 28 28 28 28 28 28 28 32 28 28 28 28 30 30 28 30 28 28 28 28 28 32 30 28 28 28 28 28 28 28 28 28 28 Type Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) BLC8G27LS-240AV BLF8G09LS-270W BLF8G10LS-270GV BLF8G10LS-270 BLF8G09LS-270GW BLF8G10LS-270V BLP8G10S-270PW BLF8G22LS-270GV BLF8G22LS-270 BLF8G22LS-270V BLF8G10LS-300P BLC9H10XS-300P* BLC8G20LS-310AV BLC9G20LS-361AVT BLC9G27XS-380AVT BLC8G09XS-400AVT BLF8G09LS-400PW BLF8G09LS-400PGW BLC9H10XS-400P* BLC9G15LS-400AVT BLC9G15XS-400AVT BLC8G20LS-400AV BLF8G20LS-400PV BLF8G20LS-400PGV BLC9G20XS-400AVT BLC9G22XS-400AVT BLC8G22LS-450AV BLC9G20LS-470AVT BLC9G20XS-550AVT BLC9H10XS-800P* BLC10G20LS-240PWT BLC10G22LS-240PVT BLC10G18XS-320AVT* BLC9H10XS-350A* BLC9G21LS-60AV* BLC9H10XS-400A* BLC9H10XS-600A* 2500 716 790 820 716 790 700 2110 2110 2110 700 700 1900 1805 2500 859 716 716 700 1452 1452 1800 1805 1805 1805 2110 2110 1805 1805 700 1805 2110 1800 600 2500 700 700 2700 960 960 960 960 960 900 2170 2170 2170 1000 1000 2000 1990 2700 960 960 960 1000 1511 1511 2000 1995 1995 1880 2200 2170 1990 1880 1000 1995 2220 1900 1000 2700 1000 1000 240 (1) 270 270 270 270 270 270 270 270 270 300 300 (1) 310 (1) 360 (1) 380 (1) 400 (1) 400 400 400 (1) 400 (1) 400 (1) 400 (1) 400 400 400 (1) 400 (1) 450 (1) 470 (1) 550 (1) 800 (1) 240 (1) 240 (1) 320 (1) 350 (1) 380 (1) 400 (1) 600 (1) 28 28 28 28 28 28 28 28 28 28 28 50 28 28 32 32 28 28 50 32 32 32 28 28 32 32 28 28 28 50 28 28 32 50 32 50 50 RF Applications Recommended Products (continued) P3dB * Check status in section 3.1, as this type is not yet released for mass production. For the complete product selection please see section 3.2 Product Highlight: Power LDMOS Transistor BLP9G0722-20G The BLP9G0722-20G is a 20 W plastic LDMOS discrete driver for base station applications at frequencies from 400 MHz to 2700 MHz. Features • High efficiency • Small footprint • Excellent ruggedness • Designed for broadband operation • Excellent thermal stability • High power gain • Integrated ESD protection 24/7 RF - Version 2 - 2017 9 Integrated Doherty Amplifiers for State-of-the-Art Wireless Infrastructure In order to achieve the smallest footprint possible, Ampleon combined its latest generations of LDMOS technology with the Doherty concept. We offer the world’s first fully integrated Doherty power amplifiers in a small package. They are available in symmetric and asymmetric versions to suit all applications, from driver (symmetric) to massive-MIMO and micro cell (asymmetric). These 2-stage Doherty amplifiers integrate both the splitter and combiner inside the package and necessitate minimum external circuitry to minimize cost and board space. The world’s first fully integrated Doherty transistor looks like an ordinary class-AB transistor but contains a splitter, dual-stage main and peak devices, delay lines, and a combiner integrated inside the package. With the ease of use of an ordinary class-AB amplifier, it also provides significant space and cost savings. It is ideally suited for space-constrained applications like small cell base stations and massive antenna arrays. Integrated Doherty Portfolio: 1.8 - 2.2 GHz Product Doherty Configuration Matching Band P3dB Efficiency @ 8 dB BO Gain Technology BLM9D1822-12B* BLM8D1822-25B* BLM9D1822-25B* BLM9D1822S-25PB(G)* BLM9D18-25AB* BLM9D1822S-50PB(G)* BLM8D1822S-50PB(G) 2-way 1:1 2-way 1:1 2-way 1:1 2-way 1:1 2-way 1:2 2-way 1:1 2-way 1:1 50 Ω in 50 Ω in 50 Ω in 50 Ω in 50 Ω in 50 Ω in 50 Ω in 1.8 - 2.2 GHz 1.8 - 2.2 GHz 1.8 - 2.2 GHz 1.8 - 2.2 GHz 1.8 GHz 1.8 - 2.2 GHz 1.8 - 2.2 GHz 41 dBm 44 dBm 44 dBm 44 dBm 44.8 dBm 47 dBm 48.4 dBm tbd tbd tbd tbd tbd tbd 39 % tbd tbd tbd tbd tbd tbd 27 dB LDMOS MMIC LDMOS MMIC LDMOS MMIC LDMOS MMIC LDMOS MMIC LDMOS MMIC LDMOS MMIC Integrated Doherty product portfolio: > 2.3 GHz (1) Product Doherty Configuration Matching Band P3dB Efficiency @ 8 dB BO Gain Technology BLM9D2327-12B* BLM9D2527-20AB BLM9D2325-20AB BLM9D2327-25B* 2-way 1:02 2-way 1:02 2-way 1:02 2-way 1:1 50 Ω in 50 Ω in 50 Ω in 50 Ω in 2.3 - 2.7 GHz 2.5 - 2.7 GHz 2.3 - 2.5 GHz 2.3 - 2.7 GHz 41 dBm 43 dBm 43 dBm 44 dBm tbd 43 % (1) tbd tbd tbd 28 dB tbd tbd LDMOS MMIC LDMOS MMIC LDMOS MMIC LDMOS MMIC 8.5 dB back-off * Check status in section 3.1, as this type is not yet released for mass production. For the complete product selection please see section 3.2 Product Highlight: 20 W LDMOS Packaged Asymmetric Doherty Power Transistor for Base Station Applications at Frequencies from 2500 MHz to 2700 MHz BLM9D2527-20AB An ultra-compact Doherty design based on BLM9D2527-20AB device achieves 43 % efficiency at 3 W average output power and 28 dB gain with LTE signal. It has a peak power capability (P3dB) of 20 W at 28 V supply voltage. 10 24/7 RF - Version 2 - 2017 This Doherty is designed for 4.5G band 41 and is tailored to volume manufacturing with high yields without tuning. The PA features high video bandwidth, enabling full-band operation. 1.1.2 Small Cells With the explosion of cellular data usage and the limited number of sites available for new macro base stations, operators have to find new ways of offering high data rates and excellent quality of service. One option is to strengthen the macro network with small cells, known as picocells (0.25 to 1 W average) and microcells (2 to 5 W average). Ampleon offers several types of solutions to the small cell PAs designer, optimized for performance, integration, or cost. RF Applications Application Diagram of a typical Small Cell Base Station TRANSMITTER IQ-MODULAT OR POWER AMPLIFIER I DVGA OR VG A PLL VC O 0 RF-BP MPA HPA 90 Q IF-SA W MIXER + LO DVG A Att. DSP TOWER-MOUNTED AMPLIFIER RECEIVER BP or LP LNA + VG A DUPLEXER IF-SA W RF-SA W LNA Rx BP or LP DUAL DVGA PLL VC O DUAL MIXER IF-SA W TX/RX1 Tx LO μC FIL TER UNIT LNA RX 2 LNA + VG A RF-SA W Recommended Products (1) Type Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) Type Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) BLP8G27-5 BLP7G22-05 BLP7G22-10 BLP8G27-10 BLF9G38-10G* BLM8G1822-20B* BLP9G0722-20(G) BLM7G1822S-20PB(G) BLM9D2325-20AB* BLM9D2527-20AB BLM8D1822-25B* 700 700 700 700 3400 1800 700 1805 2300 2500 1800 2700 2700 2700 2700 3800 2200 2700 2170 2500 2700 2200 5 5 10 10 10 20 (1) 20 20 (1) 20 (1) 20 (1) 25 (1) 28 28 28 28 28 28 28 28 28 28 28 BLM9D2327-25B* BLM7G1822S-40ABG BLM7G1822S-40PB(G) BLM7G1822S-40AB BLM8D1822S-50PB(G) BLM8G0710S-60PBG BLC9G21LS-60AV* BLM7G1822S-80ABG BLM7G1822S-80PB(G) BLM7G1822S-80AB BLF9G38LS-90P 2300 1805 1805 1805 1805 700 2500 1805 1805 1805 3400 2700 2170 2170 2170 2170 1000 2700 2170 2170 2170 3600 25 (1) 40 (1) 40 (1) 40 (1) 50 (1) 60 (1) 60 (1) 80 (1) 80 (1) 80 (1) 90 28 28 28 28 28 28 28 28 28 28 28 P3dB * Check status in section 3.1, as this type is not yet released for mass production. For the complete product selection please see section 3.2 Product Highlight: Power LDMOS Transistor BLM8D1822-25B The BLM8D1822-25B is a 25 W plastic PQFN LDMOS dual-stage integrated Doherty PA designed for micro cell applications. This cost-efficient, wideband device has an ultra-small footprint and covers all base-station frequencies from 1800 to 2200 MHz. Features • High efficiency • Excellent ruggedness • Designed for broadband operation • Excellent thermal stability • High power gain • Integrated ESD protection 24/7 RF - Version 2 - 2017 11 1.1.3 4.5G and Massive MIMO (multiple-input and multiple-output) With the increasing need for higher transmission capability and M2M connection, today's 4G network is not capable of meeting the next generation mobile broadband (MBB) requirements. On the other hand, 5G will presumably not be commercially deployed until 2020. Hence there is a need for an in-between technology to fill in the gap. 4.5G, also known as LTE-Advanced Pro, is a smoother evolution of 4G to provide Gigabit transmission capability and massive M2M connection for MBB. It is officially released in the Release-13 version of 3GPP. 4.5G adopts a number of 5G technologies. Massive MIMO is one of the key adoptions. Massive MIMO aims to significantly increase the number of antenna elements and spatial streams in a base transceiver station (BTS) to be much greater than the configurations used in base stations today to enhance reliability and throughput. Ampleon is one of the market leaders in terms of PA solutions for massive MIMO. Application Diagram of MIMO The design diagram with the scheme of zero-IF transceiver is shown below, in which each highly integrated receiver or transmitter chip with built-in PLL supports 4 receiving or transmitting channels respectively. RF Front End Receiver RXI1 ANT1 Switch RXQ1 LNA PA RXI2 RXQ2 PLL RF Front End ANT2 RXI3 Switch LNA RXQ3 PA SPI SCLI DIN RXI4 MCU DOUT CS1 RXQ4 CS2 Reference Clock RF Front End Transmitter TXI1 ANT3 Switch TXQ1 LNA PA TXI2 TXQ2 PLL RF Front End TXI3 ANT4 Switch LNA PA TXQ3 Power Management TXI4 TXQ4 Product Highlight: LDMOS 2-stage integrated Doherty MMIC BLM8D1822S-50PB(G) The BLM8D1822S-50PB(G) is a dual section, 2-stage fully integrated Doherty MMIC solution. The carrier and peaking device, input splitter and output combiner are integrated in a single package. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 1805 MHz to 2170 MHz, a-vailable in gull wing or flat lead outline. 12 24/7 RF - Version 2 - 2017 Features • High efficiency • Excellent ruggedness • Excellent thermal stability • High power gain • Integrated ESD protection (1) Type Fmin (MHz) Fmax (MHz) P3dB (W) VDS (V) BLM9D2325-20AB* BLM9D2527-20AB BLM8D1822-25B* BLM9D2327-25B* BLM9D18-25AB* BLM8D1822S-50PB(G) 2300 2500 1800 2300 1800 1805 2500 2700 2200 2700 1880 2170 20 (1) 20 (1) 25 (1) 25 (1) 25 (1) 50 (1) 28 28 28 28 28 28 RF Applications Recommended Products P3dB * Check status in section 3.1, as this type is not yet released for mass production. For the complete product selection please see section 3.2 Product Highlight: Power LDMOS Transistor BLM9D18-25AB The BLM9D18-25AB is a 25 W plastic PQFN LDMOS dual-stage integrated assymetrical Doherty PA designed for MIMO applications. This costefficient device has an ultra-small footprint and covers base-station frequencies from 1800 to 1880 MHz. Features • High efficiency • Excellent ruggedness • Excellent thermal stability • High power gain • Integrated ESD protection 24/7 RF - Version 2 - 2017 13 14 24/7 RF - Version 2 - 2017 1.2 RF Applications Amplifying the Future of TV & Broadcasting Broadcast Amplifying the Future of TV & Broadcasting Digital TV accounts for over 70 % of the broadcasting market. With parts of the UHF band reallocated for mobile telephony (e.g. LTE), operators need to make the most efficient use of the remaining spectrum. LDMOS Solutions from the Industry Leader for all Segments of the Broadcast Market Addressing these demands for more efficiency, the broadcasting market is moving away from traditional class A-B solutions. Solutions based on narrowband and ultra-wideband Doherty power amplifiers deliver increased efficiency of 50 % and above. In the near future, asymmetrical Doherty amplifiers may provide even higher efficiencies. We are committed to the UHF-TV industry and continue to invest in UHF-TV LDMOS technology, so that we can deliver products that support increasingly rich content. VHF, FM, and Analog TV Markets Ampleon has enabled the market to transition to and reap the benefits of LDMOS-based solutions. And we will continue to support our legacy products through customer product life-cycles. We have recently enhanced our broadcast offering with a full range of eXtremely Rugged (XR) products in our Overmoulded Plastic (OMP) package platform. Solutions • FM/HDR/DAB Radio • UHF/D-TV • VHF/D-TV Product Highlight: UHF Power LDMOS Transistor BLF898(S) Designed for broadcast Doherty transmitter applications, including broadcast transmitters in the UHF band and digital broadcasting systems, this 900 W LDMOS RF power transistor delivers excellent ruggedness and is ideally suited for use in digital and analog environments. Features • Designed for symmetric and asymmetric Doherty operation • High efficiency • Integrated dual sided ESD protection • Excellent ruggedness • High power gain • Excellent reliability • Easy power control 24/7 RF - Version 2 - 2017 15 Application Diagram of a TV Transmitter typ. 0.5 kW DVB-T Driver stages typ. 5 kW DVB-T output power harmonic filter power monitor TV exciter DVB-T 8× final amplifiers 1.2.1 FM/HDR/DAB Radio FM (88 - 108 MHz) FM applications need pure power, resulting in high power building blocks. Ampleon’s FM solutions not only deliver high power but are highly efficient, with our latest devices exceeding 85 % efficiency. Furthermore, FM solutions must be capable of operating under the harshest of conditions. Our eXtremely Rugged (XR) packaging, which supports VSWR > 65 : 1, ensures our products and your service keeps going despite severe operational conditions. DAB and HDR DAB and HDR radio have the same basic requirements as FM: power and robustness. In addition, as they operate across a broader frequency range, they also need to be highly linear. Ampleon’s BLFxxxXR transistor series is both highly linear and stable, making them ideal for these systems. Ampleon also creates demonstration and reference designs that are optimized in size and performance for radio broadcasting. These designs are often implemented directly by customers into their systems. Features and Benefits • Small footprint • Ready for production designs • Printed planar balun design instead of coaxial baluns Product Highlight: Power LDMOS Transistor BLF188XR(S) This 1400 W high power, extremely rugged LDMOS power transistor is ideal for broadcast and industrial applications in the HF to 600 MHz band. 16 24/7 RF - Version 2 - 2017 Features • Easy power control • Integrated ESD protection • Excellent ruggedness • High efficiency • Excellent thermal stability • Designed for broadband operation (HF to 600 MHz) Bands Type Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) Test signal BLP10H603 BLP10H605 BLP35M805 BLP10H610 BLP27M810 BLF571 BLP05H635XR(G) BLP05H675XR(G) BLP05H6110XR(G) BLP05H6150XR (G) BLP05H6250XR(G) BLF182XR(S) BLP05H6350XR(G) BLF183XR(S) BLF174XR(S) BLF184XR(S) BLF184XRG BLP05H6700XR BLF178P BLF178XR(S) BLF188XR(S) BLF188XRG BLF189XRA(S)* BLF189XRB(S)* 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 1 1 1400 1400 3500 1400 2700 500 600 600 600 600 600 600 600 600 128 600 600 600 128 128 600 600 300 150 2.5 5 5 10 10 20 35 75 110 150 250 250 350 350 600 700 700 700 1200 1400 1400 1400 1600 1900 50 50 28 50 28 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 62 59.6 17 60 19 70 75 75 75 75 75 75 75 75 73 73.5 73.5 73 75 72 73 73 tbd tbd 22.8 22.4 18 22 17 27.5 27 27 27 27 27 28 27.5 28 29 23.9 23.9 23 28.5 28 24.4 24.4 tbd tbd CW CW CW pulsed, class-AB CW Pulsed CW CW Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF CW Pulsed RF Applications Recommended Products for FM/HDR/DAB * Check the status in section 3.1, as this type is not yet released for mass production. For the complete product selection please see section 3.3 1.2.2 UHF/D-TV The UHF (470 - 800 MHz) market is diversifying and taking different approaches to the implementation of full band coverage with highest possible efficiency. The two main paths are single band ultra-wideband Doherty (UWB) solutions or classical or wideband Doherty solutions using sub-bands. Ampleon supports both approaches with dedicated RF power transistors and application designs. For example, our latest BLF888E transistor is a 3-band ultra-wideband Doherty solution achieving 50 % efficiency across the band. This is a unique solution in the market. For classical Doherty we are also developing solutions based on our upcoming BLF898 transistor which will have the highest DVB-T power capability (180 W average) and will be capable of covering the complete UHF band using a flexible output combiner design with multiple sub-bands. We are also working on an odd-mode Doherty solution based on the upcoming BLF898(S). Product Highlight: UHF Power LDMOS Transistor BLF888E(S) The BLF888E is a 750 W LDMOS RF power transistor for UHF broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features • Designed for asymmetric Doherty operation • High efficiency • Integrated ESD protection • Excellent ruggedness • High power gain • Excellent reliability • Easy power control 24/7 RF - Version 2 - 2017 17 Recommended Products for UHF/D-TV (470 - 800 MHz) Type Fmin (MHz) Fmax (MHz) PL(1dB) (W) PL(AV) (W) VDS (V) ηD (%) Gp (dB) Test signal BLP35M805 BLP27M810 BLF640 BLF571 BLP10H630P(G) BLF642 BLP10H660P (G) BLP10H690P(G) BLP10H6120P(G) BLF881(S) BLP15M7160P BLF882(S) BLF884P(S) BLF888A(S) BLF888B(S) BLF888D(S) BLF888E(S) BLF898(S)* 10 10 10 10 10 1 10 10 10 1 10 10 470 470 470 470 470 470 3500 2700 2200 500 1000 1400 1000 1000 1000 1000 1500 860 860 860 860 806 790 806 5 10 10 20 30 35 60 90 120 140 160 200 300 600 650 900 110 120 115 150 180 28 28 28 50 50 32 50 50 50 50 28 50 50 50 50 50 50 50 17 19 31 70 68 63 68 68 68 49 59.7 63 46 31 33 40 52 32 18 17 19.3 27.5 18 19 18 18 18 21 19.4 20.6 21 20 21 17 17 16 CW pulsed, class-AB Pulsed CW 1-c W-CDMA CW Pulsed RF CW Pulsed RF Pulsed RF Pulsed RF CW CW CW CW DVB-T (8k OFDM) DVB-T (8k OFDM) DVB-T (8k OFDM) DVB-T (8k OFDM) DVB-T (8k OFDM) * Check status in section 3.1, as this type is not yet released for mass production. For the complete product selection please see section 3.3 1.2.3 VHF/D-TV VHF-TV Band (170 - 250 MHz) Ampleon’s RF solutions for VHF-TV are highly efficient, with our latest solutions exceeding 85 % efficiency. These high power solutions provide the building blocks needed to deliver the necessary broadcast reach. These products also need to be able to operate in extremely harsh conditions, making them the ideal candidates for our eXtremely Rugged offering which supports VSWR > 65 : 1. For design purposes, linearity needs to be pre-correctable. For VHF-TV applications, Ampleon offers demonstration and reference class-AB applications that are optimized in both size and performance. These designs are often implemented directly by customers into their systems. Recommended Products VHF-TV Band (170 - 250 MHz) Type Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) Test signal BLP10H603 BLP10H605 BLP35M805 BLP10H610 10 10 10 10 1400 1400 3500 1400 2.5 5 5 10 50 50 28 50 62 59.6 17 60 22.8 22.4 18 22 CW CW CW pulsed, class-AB CW Product Highlight: Power LDMOS Transistor BLP05H6350XR(G) The BLP05H6350XR is a 350 W LDMOS RF power transistor for broadcast transmitter and industrial applications. It can deliver 350 W in broadband applications from HF to 600 MHz. Its excellent ruggedness and broadband performance make it ideal for digital transmitter applications. 18 24/7 RF - Version 2 - 2017 Features • Integrated ESD protection • Excellent ruggedness • High efficiency • Excellent reliability • Easy power control Type Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) Test signal BLP27M810 BLF571 BLP05H635XR(G) BLP05H675XR(G) BLP05H6110XR(G) BLP05H6150XR(G) BLP05H6250XR(G) BLF182XR(S) BLF573(S) BLP05H6350XR(G) BLF183XR(S) BLF574 BLF574XR(S) BLF184XR(S) BLF184XRG BLP05H6700XR(G) BLF578 BLF578XR(S) BLF188XR(S) BLF188XRG BLF189XRA(S)* 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 1 2700 500 600 600 600 600 600 600 500 600 600 500 500 600 600 600 500 500 600 600 300 10 20 35 75 110 150 250 250 300 350 350 600 600 700 700 700 1200 1400 1400 1400 1600 28 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 19 70 75 75 75 75 75 75 70 75 75 70 74.7 73.5 73.5 73 75 69 73 73 tbd 17 27.5 27 27 27 27 27 28 27.2 27.5 28 26.5 24 23.9 23.9 23 26 23.5 24.4 24.4 tbd Pulsed CW CW Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF CW Pulsed RF Pulsed RF CW Pulsed RF Pulsed RF Pulsed RF Pulsed RF CW Pulsed RF Pulsed RF Pulsed RF CW RF Applications Recommended Products VHF-TV Band (170 - 250 MHz) (continued) * Check the status in section 3.1, as this type is not yet released for mass production. For the complete product selection please see section 3.3 Product Highlight: Power LDMOS Transistor BLP05H6700XR(G) The BLP05H6700XR is a 700 W extra rugged LDMOS power transistor optimized for broadcast and applications in the HF to 600 MHz band. Features • Easy power control • Integrated dual sided ESD protection • Excellent ruggedness • High efficiency • Excellent thermal resistance due to copper flange • Designed for broadband operation (HF to 600 MHz) 24/7 RF - Version 2 - 2017 19 20 24/7 RF - Version 2 - 2017 1.3 RF Applications Robust Solutions Serving in Harsh and Sensitive Environments Industrial, Scientific and Medical (ISM) The ISM frequency bands feature a diverse range of applications including chemical processing, magnetic resonance imaging (MRI), electro coagulation surgical equipment, precipitation monitoring, and wind profiling. Yet, all these applications share common requirements, such as high output power, high efficiency, robustness and thermal stability. Rugged Solutions, Harsh Environments Systems operating in the ISM band need to share their bandwidth with short-range, low-power communications systems and radio-frequency identification (RFID) applications. Many ISM applications suffer from severely unmatched inputs and outputs, demanding very rugged solutions. Whatever the challenge, we have the RF power solutions you need. RF Power for ISM up to 1600 MHz Our portfolio includes field-proven LDMOS devices that help developers create ISM systems that deliver high performance and a long lifetime. RF Power for the ISM 2.45 GHz Band Due to its global availability, the 2.45 GHz band supports a wide range of ISM applications including medical therapy as well as many RF Energy applications (see section 1.4). Low Power Transistors Ranging from 2 W to tens of watts, our complete portfolio of low power RF transistors includes devices across all ISM frequencies and applications. This makes Ampleon the one-stop source for all your ISM RF needs. Product Highlight: Power LDMOS Driver Transistor BLF189XRB(S) The BLF189XRB is a 1900 W extremely rugged LDMOS power transistor for indusrial applications in the HF to 150 MHz band. Features • Easy power control • Integrated ESD protection • Excellent ruggedness • High efficiency • Excellent thermal stability 24/7 RF - Version 2 - 2017 21 Typical Applications • RF drying • RF welding • Citizens’ Band (CB) radio communication • Magnetic Resonance Imaging (MRI) • CO2 lasers • Plasma generators • Particle accelerators • RF heating • RF thawing • Chemical processing • Plasma lighting 1.3.1 CO2 Laser Exciters and Plasma Generators CO2 lasers turn electrical energy into concentrated infrared light energy. The plasma is formed by the gas when electrical energy transforms into heat. This same process is used for plasma generators. High power CO2 lasers are used for cutting and welding while lower power applications include engraving. Plasma generators are primarily used for power generation or to accelerate particle beams, and for plasma etching or deposition in the semiconductor industry. These devices need high power amplifiers. High power generates heat. Even highly efficient designs still need to dissipate extra heat effectively and our ACP3 package, with its low thermal resistance, helps doing that even for very high power systems. 1.3.2 Medical and Industrial Imaging For doctors or clinicians is it necessary to get pictures of the anatomy and the physiological processes of the body in both health and disease. Ampleon works with many established brands in helping improve the world of healthcare through safe, efficient and groundbreaking medical imaging concepts. However MRI is not only used for medical applications, it can also be used in the industrial market. For example, MRI is used to measure gas flow in the petrochemical industry. 1.3.3 Particle Accelerators Particle accelerators have endless potential including the development of clean energy, purification of air or water, targeted Product Highlight: Broadband Power LDMOS Transistor BLF647P The BLF647P is a 200 W LDMOS RF power transistor for industrial applications in the HF to 1500 MHz frequency range. Its excellent ruggedness and broadband performance make it ideal for digital applications. 22 24/7 RF - Version 2 - 2017 Features • Integrated ESD protection • Excellent ruggedness • High power gain • High efficiency • Excellent reliability • Easy power control cancer treatment, detecting suspicious shipments and of course discovering scientific breakthroughs. There are three different types of particle accelerators: the synchrotron, linear accelerator (linac) and cyclotron. A cyclotron accelerates charged particles outwards from the centre along a spiral path, using a rapidly varying (radio frequency) electric field, cyclotrons are widely used to produce particle beams in physics and nuclear medicine. RF Applications Synchrotrons are cyclic particle accelerators that enable large-scale facilities, since bending, beam focusing and acceleration can be separated into different components. The 27 km long Large Hadron Collider in CERN Switzerland is the world’s largest synchrotron. Linear accelerators (Linacs) are increasingly being used in the medical industry for cancer treatment and creating radioactive isotopes. Linacs run at high power with multiple amplifiers needed to generate particles. 1.3.4 Instrumentation Ampleon offers a range of RF transistors and evaluation kits for RF instrumentation applications. Our wideband amplifiers feature low noise and are exceedingly linear, making them particularly suitable for feedback channels in a wide range of measuring equipment including vector signal transceivers, signal generators and RF power meters. Recommended Products for ISM 0 - 500 MHz Type Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) Test signal BLP10H603 BLP10H605 BLP10H610 BLP05H635XR(G) BLP05H675XR(G) BLP05H6110XR(G) BLP05H6150XR(G) BLF182XR(S) BLP05H6250XR(G) BLF183XR(S) BLP05H6350XR(G) BLF184XR(G) BLF184XRS BLP05H6700XR(G) BLF188XR(S) BLF188XRG BLF189XRA(S)* BLF189XRB(S)* 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 1 1 1400 1400 1400 600 600 600 600 600 600 600 600 600 600 600 600 600 300 150 2.5 5 10 35 75 110 150 250 250 350 350 700 700 700 1400 1400 1600 1900 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 62 59.6 60 75 75 75 75 75 75 75 75 73.5 73.5 73 73 73 tbd tbd 22.8 22.4 22 27 27 27 27 28 27 28 27.5 23.9 23.9 23 24.4 24.4 tbd tbd CW class-AB @ 860 MHz CW pulsed class-AB @ 860 MHz CW Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF CW Pulsed * Check the status in section 3.1, as this type is not yet released for mass production. For the complete product selection please see section 3.4 Product Highlight: Power LDMOS Transistor BLF188XR(S) The BLF188XR is a 1400 W extremely rugged LDMOS power transistor for industrial applications, capable of providing an outstanding 1600 W of peak output power. It can operate as high as 50 V and still pass extreme ruggedness testing. The BLF188XR transistor’s ruggedness and excellent load properties make it ideal for MRI applications. Features • Easy power control • Integrated ESD protection • Excellent ruggedness • High efficiency • Excellent thermal stability 24/7 RF - Version 2 - 2017 23 Recommended Products for ISM 0 - 1600 MHz Type Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) Test signal BLP35M805 BLF640 BLP10H610 BLP27M810 BLP10H630P(G) BLF642 BLP10H660P(G) BLP10H690P(G) BLF645 BLP10H6120P(G) BLP15M7160P BLF1721M8LS200 BLF2324M8LS200P BLF647P(S) BLF6G13L(S)-250P BLF6G15L(S)-500H BLF10H6600P(S) 10 10 10 10 10 1 10 10 1 10 10 1700 2300 10 1300 1400 400 3500 2200 1400 2700 1000 1400 1000 1000 1400 1000 1500 2100 2400 1500 1300 1500 1000 5 10 10 10 30 35 60 90 100 120 160 200 200 200 250 500 600 28 28 50 28 50 32 50 50 32 50 28 28 28 32 50 50 50 17 31 60 19 68 63 68 68 56 68 59.7 28.5 32 70 56 19 46 18 19.3 22 17 18 19 18 18 18 18 19.4 19 17.2 18 17 16 20.8 CW pulsed, class-AB 1-c W-CDMA CW Pulsed CW Pulsed RF CW Pulsed RF Pulsed RF CW Pulsed RF CW 2-c W-CDMA 1-c W-CDMA Pulsed RF CW DVB-T (8k OFDM) 2-Tone, class-AB For the complete product selection please see section 3.4 Product Highlight: Power LDMOS Transistor BLP05H6700XR(G) The BLP05H6700XRG is a 700 W extra rugged LDMOS power transistor optimized for broadcast, industrial, aerospace and defense applications in the HF to 600 MHz band. 24 24/7 RF - Version 2 - 2017 Features • Easy power control • Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor • Excellent ruggedness VSWR 65 : 1 • High efficiency • Excellent thermal stability • Designed for broadband operation (HF to 600 MHz) • 50 V operation for easy broadband matching • Package available in both straight leads and gull wing form RF Applications Product Highlight: Broadband LDMOS Driver Transistor BLP10H610 The BLP10H610 is a 10 W LDMOS broadband driver transistor in an OMP package that is ideal for ISM applications operating at frequencies from HF to 1400 MHz. Features • Easy power control • Integrated ESD protection • Excellent ruggedness • High efficiency • Excellent thermal stability • Designed for broadband operation (HF to 1400 MHz) 24/7 RF - Version 2 - 2017 25 26 24/7 RF - Version 2 - 2017 1.4 RF Applications Controlling Heat and Power RF Energy Solid state RF Energy represents a radical approach to powering many different types of applications. For cooking, heating and drying it replaces large, inflexible magnetron tubes with a small, controllable and accurate power source. For lighting, it provides a highly efficient source that is close to natural light. And in plasma ignition, it enables cleaner combustion to improve fuel economy and reduce carbon emissions. Ampleon is a founding member of the RF Energy Alliance whose members share the vision of building a fast-growing and innovative marketplace and ecosystem around the use of solid state RF Energy as a highly efficient and controllable source of heat and power. Recommended Products for RF Energy Applications Function RF cooking RF lighting RF heating and drying (1) Product Type Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) Test signal Driver Final Driver Final Driver Final Driver Final Driver Final Driver Final Driver Driver Final Pallet Pallet Pre-driver Driver Final BLF2425M9L(S)30 BLC2425M8LS300P BLP27M810 BLC2425M9LS250 BLP35M805 BLC05M6XS200 BLP10H605 BLP05H6350XR BLF2425M9L(S)30 BLC2425M8LS300P BLP27M810 BLC2425M9LS250 BLP27M810 BLP10H605 BLF0910H6LS500 BPC2425M9X2S250* BPC2425M9XS250* BLP27M810 BLM2425M7S60P BLC2425M9LS700PV* 2400 2400 10 2400 10 425 10 10 2400 2400 10 2400 10 10 900 2400 2400 10 2300 2400 2500 2500 2700 2500 3500 450 1400 600 2500 2500 2700 2500 2700 1400 930 2500 2500 2700 2500 2500 30 300 10 250 5 200 5 350 30 300 10 250 10 5 500 300 300 10 90 1200 (1) 32 32 28 32 28 28 50 50 32 32 28 32 28 50 50 32 32 32 32 32 61 58 19 61 17 82 59.6 75 61 58 19 61 19 59.6 60 60 61 30 38 50 18.5 17 17 18 18 21 22.4 27.5 18.5 17 17 18 17 22.4 18 36 18 17 23 12.5 CW CW Pulsed CW CW CW pulsed, class-AB CW CW Pulsed CW CW CW Pulsed CW CW Pulsed CW CW CW CW CW Pulsed CW Pulsed CW Pulsed CW P3dB pulsed. ∂ ≤ 10% * Check status in section 3.1, as this type is not yet released for mass production. For the complete product selection please see section 3.5 Product Highlight: Power LDMOS Transistor BLC2425M9LS250 The BLC2425M9LS250 power transistor is one of the first devices to use our ACP3 technology. Its copper flanges deliver leading Rth performance and thermal conductivity. A plastic air-cavity package further improves efficiency by avoiding contact with the bond wires. Features • Copper flange • R th performance • Excellent ruggedness • Plastic air-cavity 24/7 RF - Version 2 - 2017 27 28 24/7 RF - Version 2 - 2017 1.4.1 RF Applications Revolutionizing Cooking RF Cooking Cooking your Food to Perfection Our solid state RF solutions will change the kitchen landscape. RF ovens perform more efficiently than conventional and microwave-based ovens. And by providing increased control and power, food can be cooked more precisely, keeping taste, texture and all the vitamins. Replacing a single magnetron with multiple solid state RF sources brings additional possibilities for controlling the waveform inside the oven. The frequency can be changed to match the type of food being cooked and by adjusting the phase of the signals, the energy distribution can be altered to ensure every meal is cooked to perfection. For the professional market, RF Energy solutions provide fast, reliable and accurate cooking to help fast food chains and restaurants provide a speedy and appetizing service. In the home, RF Energy solutions not only cooks food to perfection but also enable new form factors, such as tabletop ovens. Application Diagram of a Solid State Cooking System Key Features and Benefits • Cooks homogeneously • Less moisture lost than microwave or conventional ovens Detector in coupled out out • Accurate, controlled flexible cooking • Able to cook different food items at the same time • Ability to monitor cooking process PC CONTROL BOARD Detector in coupled out out • Supports different form factor designs • Long lifetime • Reduced maintenance costs Detector in coupled out out Detector in coupled out out Product Highlight: 2-stage 250 W / 2.5 GHz RF Energy Pallet BPC2425M9X2S250 This 250 W LDMOS Pallet is suitable for industrial applications in the 2.45 GHz frequency band. The BPC2425M9X2S250 is designed for high power CW applications. Features • 300 W CW saturated power. • 60 % Efficiency and 36 dB Gain @ 2.5GHz • Optimized for industrial applications and RF cooking • Integrated temperature sensing • Cu-coin technology, no need for a baseplate • 72 x 34 mm2 24/7 RF - Version 2 - 2017 29 30 24/7 RF - Version 2 - 2017 1.4.2 RF Applications Bringing Energy to Light RF Lighting Our understanding of RF technology has enabled us to create some of the most rugged devices in the industry, a know-how that we have instilled into our RF lighting transistors. In addition, the very high efficiency of our LDMOS transistors also allows our RF lighting solutions to deliver very high lumens/watt, beating conventional sources. Our latest RF lighting solutions are ideal for both indoor and outdoor area lighting in architectural, entertainment, high bay and agricultural/horticultural applications. In the horticulture segment, RF lighting delivers full spectrum light which can help to increase the speed of cultivating and the quality of crops for the next generation of farmers. This also makes it ideal for retail applications to ensure items, from food to the latest fashion, look more natural under indoor lighting. With energy savings of up to 50 % over high-pressure sodium and metal halide systems and long lamp lifetimes, RF lighting helps to reduce maintenance costs in high bay/high mast installations from car parks to warehouses. Application Diagram of RF Light-Emitting Plasma (LEP) Key Features and Benefits • Full spectrum light • Controllability • Dimmable • Energy saving Oscillator MPA HPA • Long lifetime • Lower maintenance cost • Smaller form factor design CONTROLLER Product Highlight: 2-stage 200 W / 433 MHz RF Energy Pallet BPC05M9XS200 This 200 W LDMOS Pallet is designed for high power CW applications @ 433 MHz. Features • 200 W CW power • 80 % Efficiency and 21 dB Gain @ 434 MHz • Optimized for RF cooking and defrosting • Integrated sensing • Extremely rugged, no need for isolators • Cu-coin technology, no need for a baseplate • 125 x 33 mm2 24/7 RF - Version 2 - 2017 31 1.4.3 RF Heating and Drying Industrial RF heating and drying is fast and flexible. It allows for a quicker and streamlined production process for many manufacturing applications. It provides uniform heating and drying, a reduction in emissions and improvements in product quality and efficiency. We offer RF heating and drying solutions for both the 915 MHz and 2.45 GHz ISM frequency bands. Available as individual transistors or complete pallets, our solutions can be easily scaled to deliver the needed power and can assist in reducing emissions, improving efficiency and speeding up production processes. RF heating and drying can be used for a wide range of applications from food preparation to chemical processing. Key Features and Benefits • Faster uniform drying • Excellent ruggedness • Thermal stability • Efficiency savings • Controllability, with available feedback loop • Heat spreads evenly across a target • Prevents local overheating • Improved product quality • Unprecedented system reliability Product Highlight: 1-stage 250 W / 2.5 GHz RF Energy Pallet BPC2425M9XS250 This 250 W LDMOS Pallet is suitable for industrial applications in the 2.45 GHz frequency band. The BPC2425M9XS250 is designed for high power CW applications. 32 24/7 RF - Version 2 - 2017 Features • 300 W CW saturated power. • 61 % Efficiency and 18 dB Gain @ 2.5 GHz • Optimized for industrial applications • Integrated temperature sensing • Cu-coin technology, no need for a baseplate • 52 x 34 mm2 1.4.4 RF Ignition RF Applications A Revolution in Automotive Ignition The automotive industry is facing increasingly tough emission challenges. New European regulations, to be introduced in 2021, will reduce fleet CO2 emissions from today’s 130 g/km to 95 g/km. While electric vehicles will play a role in meeting these new targets, they still only represent a small percentage of vehicles sold. Automotive manufacturers will also need to make their combustion engine vehicles more efficient and RF ignition offers a new and exciting concept which can improve fuel efficiency and reduce pollutants. RF plasma ignition is an emerging technology which has been in development for more than five years. Ampleon has been working closely with partners to make this new technique a reality for efficient automotive use. Micro plasma ignition has advantages over the traditional spark plug as it enables more complete combustion, allowing for a leaner fuel mix and thus reducing carbon emissions and the need for catalytic converters or custom exhausts. Key Features and Benefits • Cost-efficient • Easy implementation • Improved fuel efficiency • Reduced emissions Product Highlight: Power LDMOS Transistor BLC2425M9LS700PV This is a 1200 W LDMOS power transistor for industrial applications at 2.45 GHz, and particularly automotive plasma ignition. The BLF2425M9LS700PV is designed for high power low duty cycle pulsed applications and is assembled in a high performance ACP2 package. Features • Very high output power • High efficiency • 2400 to 2500 MHz operation • Internal input and output matching • Integrated rise/fall time protection 24/7 RF - Version 2 - 2017 33 34 24/7 RF - Version 2 - 2017 1.5 Aerospace & Defense SWaP + CR Size, Weight and Power (SWaP) have long been the key requirements for aircraft systems. Systems need to be small, lightweight and yet still powerful enough for long range operation. Moreover, today’s systems must also be Cost-efficient and Reliable (CR). As a recognized global leader in base station and broadcast transmitters, Ampleon strengthens a broad portfolio for the strategic aerospace & defense market. With 50 years of experience in RF, Ampleon is an established, market leading supplier with a wealth of knowledge and expertise. We are committed to fully support customers' applications with a dedicated longevity program that guarantees our parts will continue to be available throughout the operational lifetime. In addition to GaN solutions that deliver the highest performance, we also offer dedicated Gen9 LDMOS solutions that provide close to GaN performance at a much lower cost and with higher reliability and ruggedness. By being technology agnostic, we can help customers find the best possible solution for their application needs. All our aerospace & defense products are ITAR-free, simplifying logistics and paperwork for designs aimed at export markets. We also provide global application support with offices in the US, Europe and Asia. Fast Time to Market To ensure you get your solutions to market as quick as possible, we offer discrete RF components, MMICs and complete RF pallets. 1.5.1 Radar Commercial avionics and military radar applications include air traffic control, situational awareness, weather radar, surveillance, fire control, searching and tracking. These systems cover a wide range of operating frequencies and there is an ongoing Product Highlight: 400 W LDMOS S-band Radar Power Module BPS9G2934X-400 This 400 W GEN9 LDMOS power module is intended for S-band radar applications in the frequency range from 2.9 GHz to 3.4 GHz. Features • 400 W Pulsed RF power designed for S-band (2.9 GHz to 3.4 GHz) • Small size: 5.5 x 3.5 cm • Low weight: 85 gr • Excellent ruggedness, VSWR 10 : 1 • 1 x 10 6 h MTTF • Input/output 50 Ω matched • High efficiency • Excellent thermal stability (silver plated base plate) • High flexibility with respect to pulse formats • 100 % RF testing in production 24/7 RF - Version 2 - 2017 35 RF Applications Making the World a More Predictable Place transition within solid state power amplifier solutions and from bipolar to LDMOS and GaN. Ampleon offers a broad portfolio of dedicated LDMOS and GaN solutions that covers all these frequency bands with highly reliable solutions. Sub-1 GHz Sub-1 GHz radar market includes the HF, VHF UHF radar and broadband communication systems for both civilian and defense applications. Advances in solid state technologies, including LDMOS and GaN, enable SWaP (Size, weight and Power) optimization in this application. For specific sub band in the sub-1 GHz application, the extra rugged LDMOS technology offers unrivaled performance and ruggedness at lowest cost. Frequency Bands • Sub-1 GHz • Commercial Avionics (950 - 1215 MHz / 1030 - 1090 MHz) • L-band (1 - 2 GHz) • S-band (2 - 4 GHz) • C-band (4 - 8 GHz) • X-band (8 - 12 GHz) • Ku-band (12 - 18 GHz) 1.5.2 Electronic Counter Measures (ECM) Electronic counter measures / jammers are used in all walks of life from defense systems to cellular jammers. High power is critical for this market along with a wide frequency range and high efficiency. Ampleon’s solutions ensure effective coverage across a broad bandwidth with the highest power GaN products on the market. Application Support To support customers in developing and bringing new ECM solutions to market quickly, we have a range of demo boards available on request. 1.5.3 Military Communications Systems (Milcom) RF solutions for Milcom applications require the highest linearity to ensure clear, interference-free communication. Ampleon offers dedicated solutions for Milcom applications that perform up to 10 dBC (IMD3 linearity) better than competitive products. Our portfolio includes both GaN and LDMOS devices. Product Highlight: Broadband RF Power GaN HEMT CLF1G0035(S)-200P The CLF1G0035-200P and CLF1G0035S-200P are 200 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz. 36 24/7 RF - Version 2 - 2017 Features • Operating frequency from DC to 3.5 GHz • 200 W general purpose broadband RF Power GaN HEMT • Excellent ruggedness (VSWR 10 : 1) • High voltage operation (50 V) • Thermally enhanced package 50 W GaN Device Comparison in 1000 - 2500 MHz 50 W Demonstration Board 18502-tone Intermodulation Distortion, Δf=1 MHz, Vd=50 V -20 Curves at 1, 1.8, 2.5 GHz Ampleon’s device, Idq = 200 mA Competitor A , Idq= 450 mA Competitor B, Idq = 400 mA RF Applications -25 IMD3 (dBc) -30 -35 -40 -45 -50 10 PEP Pout (W) Recommended LDMOS Pallets for L / S-band Radar Type Pallet Size Weight Fmin (MHz) Fmax (MHz) Ppeak (W) VDS (V) ηD (%) Gp (dB) Test signal BLL6H1214P2S-250 BPS9G2934X-400* BPS9G2933X-450* BPS9G3135X-400* 5 x 12 cm 3.5 x 5.5 cm 3.5 x 5.5 cm 3.5 x 5.5 cm 80 85 85 85 1200 2900 2900 3100 1400 3400 3300 3500 250 400 450 450 45 32 32 32 48 43 45 44 27 12.5 13.5 12.5 Pulsed RF Pulsed RF Pulsed RF Pulsed RF Recommended LDMOS Products for Sub-1 GHz Radar Type Fmin (MHz) Fmax (MHz) Freq. (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) Test signal BLP10H610 BLP10H630P BLP05H635XR BLP10H660P BLP05H675XR BLP10H6120P BLF182XR(S) BLF183XR(S) BLF574XR(S) 10 10 10 10 10 10 10 10 10 1400 1000 600 1000 600 1000 600 600 500 840 to 860 720 127 720 108 720 108 108 225 10 30 35 60 75 120 250 350 600 50 50 50 50 50 50 50 50 50 60 72 75 72 75 72 75 75 74.5 22 18 27 18 27 18 28 28 23.5 CW Pulsed RF CW Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF CW * Check the status in section 3.1, as this type is not yet released for mass production. For the complete product selection please see section 3.6 Product Highlight: Power LDMOS Transistor BLP05H6700XR(G) The BLP05H6700XRG is a 700 W extra rugged LDMOS power transistor optimized for broadcast, industrial, aerospace and defense applications in the HF to 600 MHz band. Features • Easy power control • Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor • Excellent ruggedness VSWR 65 : 1 • High efficiency • Excellent thermal stability • Designed for broadband operation (HF to 600 MHz) • 50 V operation for easy broadband matching • Package available in both straight leads and gull wing form 24/7 RF - Version 2 - 2017 37 Recommended LDMOS Products for Sub-1 GHz Radar (continued) Type Fmin (MHz) Fmax (MHz) Freq. (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) Test signal BLF184XR(G) BLF578 10 10 600 500 108 108 700 1000 50 50 81.9 75 23.5 26 CW CW Recommended LDMOS Products for Avionics Type Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) Test signal BLP10H610 BLL6H0514-25 BLP10H630P BLP10H660P BLP10H6120P BLA6G1011(L)-200R(G) BLA6G1011LS-200RG BLA8G1011L(S)-300 BLA8G1011L(S)-300G BLA6H0912-500 BLA8H0910L(S)-500 BLA6H1011-600 BLF988(S) BLU6H0410L(S)-600P BLA6H0912L(S)-1000 10 500 10 10 10 1030 1030 1030 1030 960 910 1030 500 400 960 1400 1400 1000 1000 1000 1090 1090 1090 1090 1215 930 1090 1000 900 1215 10 25 30 60 120 200 200 300 300 500 500 600 600 600 1000 50 50 50 50 50 28 28 32 32 50 50 48 50 50 50 60 50 68 68 68 65 65 56 56 50 60 52 58 58 51 22 19 18 18 18 20 20 16.5 16.5 17 18 17 19.8 20 15.5 CW Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Recommended LDMOS Products for L-band Radar Type Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) Test signal BLP10H610 BLL8H0514-25 BLL8H0514L(S)-130 BLL6H1214P2S-250 BLL6G1214L-250 BLL8H1214L(S)-250 BLL8H1214L(S)-500 BLL9G1214L(S)-600* 10 500 500 1200 1200 1200 1200 1200 1400 1400 1400 1400 1400 1400 1400 1400 10 25 130 250 250 250 500 600 50 50 50 45 36 50 50 32 60 59 50 48 45 55 50 60 22 21 17 27 15 17 17 19 CW Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Recommended LDMOS Products for S-band Radar Type Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) Test signal BLS9G2735L(S)-50* BLS7G2325L-105 BLS6G2731(S)-120 BLS6G3135(S)-120 BLS6G2731S-130 2700 2300 2700 3100 2700 3500 2500 3100 3500 3100 50 105 120 120 130 32 30 32 32 32 47 55 48 43 50 12 16.5 13.5 11 12 Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF * Check the status in section 3.1, as this type is not yet released for mass production. For the complete product selection please see section 3.6 Product Highlight: Power LDMOS transistor BLS9G2729L(S)-350 The BLS9G2729L(S)-350 is a 350 W LDMOS power transistor for S-band applications in the frequency range from 2.7 GHz to 2.9 GHz. 38 24/7 RF - Version 2 - 2017 Features • High efficiency • Excellent ruggedness • Designed for S-band operations • Excellent thermal stability • Easy power control • Integrated dual sided ESD protection enables excellent off-state isolation • High flexibility with respect to pulse formats • Internally matched for ease of use Type Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) Test signal BLS6G2933S-130 BLS7G2933S-150 BLS7G2730L(S)-200P BLS7G3135LS-200 BLS7G2729L(S)-350P BLS9G2729L(S)-350 BLS7G3135L(S)-350P BLS8G2731L(S)-400P BLS9G2731L(S)-400 BLS9G2934L(S)-400 BLS9G3135L(S)-400 2900 2900 2700 3100 2700 2700 3100 2700 2700 2900 3100 3300 3300 3000 3500 2900 2900 3500 3100 3100 3400 3500 130 150 200 200 350 350 350 400 400 400 400 32 32 32 32 32 28 32 32 32 32 32 47 47 48 43 50 50 43 47 46 44 44 12.5 13.5 12 12 13 14 12 13 13 11 11 Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF RF Applications Recommended LDMOS Products for S-band Radar (continued) Recommended GaN Product Portfolio for Radar Type Fmin (MHz) Fmax (MHz) Freq. (MHz) PL(3dB) (W) VDS (V) ηD (%) Gp (dB) Test signal CLF1G0060(S)-10 CLF1G0060(S)-30 CLF1G0060(S)-10 CLF1G0060(S)-30 CLF1G0035(S)-50 CLF1G0035(S)-100P CLF1G0035(S)-100 CLF1G0035(S)-200P 0 0 0 0 0 0 0 0 6000 6000 6000 6000 3500 3500 3500 3500 5300 to 5900 1500 to 4000 3100 to 3500 3100 to 3500 3100 to 3500 3100 to 3500 3100 to 3500 2500 to 3000 10 30 10 30 50 100 100 200 50 50 50 50 50 50 50 50 > 47 > 50 > 55 > 55 > 55 > 55 > 45 > 43 > 10 > 10 > 12 > 12 > 13 > 13 > 10 > 11 Pulsed Pulsed Pulsed Pulsed Pulsed Pulsed Pulsed Pulsed Recommended GaN Product Portfolio for Communications & ECM Type Fmin (MHz) Fmax (MHz) Freq. (MHz) PL(3dB) (W) VDS (V) ηD (%) Gp (dB) IMD3 Performance Test signal CLF1G0060(S)-10 CLF1G0060(S)-30 CLF1G0035(S)-50 CLF1G0035(S)-100P CLF1G0035(S)-100 CLF1G0035(S)-200P 0 0 0 0 0 0 6000 6000 3500 3500 3500 3500 200 to 3200 500 to 3000 200 to 2100 2500 to 3000 500 to 2500 1700-2300 10 30 50 100 100 200 50 50 50 50 50 50 30 to 60 45 to 70 40 to 65 50 to 55 47 to 80 40 to 55 > 14 > 11 > 14 > 13 > 14 > 12 -40 dBc, PEP 5 W -40 dBc, PEP 15 W -40 dBc, PEP 10 W -40 dBc, PEP 20 W -40 dBc, PEP 20 W -40 dBc, P≠≠≠EP 120 W Pulsed Pulsed Pulsed Pulsed Pulsed Pulsed For the complete product selection please see sections 3.6 and 3.7 Product Highlight: Power LDMOS Transistor BLA8H0910L(S)-500 The BLA8H0910L-500 and BLA8H0910LS-500 500 W LDMOS are power transistors for avionics applications at frequencies from 900 MHz to 930 MHz. They are designed for high-power CW applications and assembled in high performance ceramic packages. Features • High efficiency • Easy power control • Excellent ruggedness • Integrated ESD protection • Designed for broadband operation (900 MHz to 930 MHz) • Internally input matched 24/7 RF - Version 2 - 2017 39 40 24/7 RF - Version 2 - 2017 Driving Technologies for Best Performance 2. Technologies Best-in-Class LDMOS to drive any RF Power Application LDMOS (Laterally Diffused Metal Oxide Semiconductor) is the mainstream device technology used in high-power RF amplifiers for frequencies ranging from 10 MHz to 3.5 GHz. LDMOS offers a consistent excellent level of RF performance, including very high ruggedness and efficiency, high gain, and compatibility with Cu based package platforms. LDMOS has a lower cost (per unit area) compared to competing technologies (e.g. GaN) which, combined with a mature industrial base, makes it ideal for high-power RF amplifier products with integrated matching (e.g. multiple stages, Doherty) running in high volume production. Ampleon’s LDMOS technology platforms are designed for devices that run from supply voltages in the range of 28 to 50 V, with outstanding efficiency, power, and ruggedness. The technology draws on Ampleon’s heritage of proven product and technology innovation in RF, which spans over 35 years. Ampleon’s LDMOS devices deliver record performance up to 3.8 GHz and are applied extensively by wireless network operators to realize best-in-class efficiencies for wireless base stations and hence reduce operating costs. Our Gen10 32V LDMOS products were released to production in 2016 and have been optimized for LTE and with 1.5 dB higher power gain and modulated power added efficiencies in the excess of 50 % at 2.1 GHz. Our first Gen10 50V LDMOS products will be released to production in 2017 with an LTE modulated power added efficiency up to 60 % below 1 GHz. High Power Doherty Processes and Architectures We achieved these high efficiencies by developing optimized LDMOS devices with specific Doherty amplifier circuit designs. Our LDMOS process technology is developed to support Doherty amplifiers with the combination of high power, high efficiency, low memory effects and excellent pre-distortion capabilities. Ampleon supplies Doherty amplifier circuits both as discrete transistor products and integrated as Packaged Asymmetric Doherty (PAD) products in a single high power transistor package. These are fully RF tested at the Doherty level to guarantee performance in the customer’s application circuit, demonstrate the strengths of Ampleon’s LDMOS to deliver new levels of consistency in power distribution over a die, and also in production, from batch to batch and year to year. Broadband MMICs and Drivers Ampleon has both broadband drivers packaged in TO270 plastic packages as well as a broad portfolio of high performance MMIC amplifier products to simplify the overall amplifier line up. The MMICs are high efficiency 2-stage multiband amplifiers, covering frequency ranges 0.7 - 1 GHz, 1.8 - 2.2 GHz, 2.3 - 2.7 GHz or 3.4 - 3.8 GHz, and packaged in low cost overmolded plastic. They line-up seamlessly with the high power Doherty products or can be used as stand-alone transmit amplifiers for lower power applications, e.g. small cells. In 2017, Ampleon is releasing a portfolio of integrated Doherty MMICs where the input splitter and output combiner of the Doherty circuit are integrated into the MMIC package to enhance broadband performance and minimize overall application size, targeting high efficiency drivers and 4.5G massive-MIMO applications. 24/7 RF - Version 2 - 2017 41 Technologies 2.1 Multi-Market: Higher Power Densities and Ruggedness For the Broadcast, ISM and Aerospace & Defense markets, Ampleon has developed a family of LDMOS process platforms to provide devices tuned to the specific needs of these applications. For example, the Gen6HV technology has been optimized for 42 to 50 V operation, and improved further as XR2, to enable devices with ruggedness on par with legacy VDMOS technology. The Gen6XR process is essential for ISM applications which suffer from severe mismatch conditions, since Gen6XR enables products that withstand a 1:65 mismatch ratio without compromising the RF performance, while still delivering output powers up 1600 W CW. For broadcast applications, Ampleon offers a broad portfolio of 50 V LDMOS products that set new milestones in terms of power density and provide a unique high efficiency solution when combined with our patented Ultra-Wideband (UWB) Doherty technology to cover the full broadcast frequency spectrum. Aerospace & Defense Applications The improvements in LDMOS technology have enabled the aerospace & defense radar markets to migrate from designs using Si bipolar power transistors to LDMOS. LDMOS RF performance is superior to Si bipolar, has a simpler application and significant cost-of-ownership benefits in these markets. Gen6HV products provide highly efficient solutions for Avionics L-band radar applications. Our Gen10 LDMOS has a competitive high frequency performance at 2.7 - 3.8 GHz addressing S-band radar, supplementing a full portfolio of broadband GaN devices. Solid State RF Energy The promise of RF Energy is a cleaner, more efficient, and more effective power source than conventional solutions. From solid state cooking and RF sparkplugs, to RF plasma lighting and medical therapy, to industrial cooking and drying, the possibilities for RF Energy are nearly limitless. A radical approach is sometimes needed to break through existing limitations and this is exactly what RF Energy offers. Ampleon has a portfolio of tailored LDMOS amplifiers to meet the requirements of individual RF Energy applications, from solid state lighting at 433 MHz, to industrial heating at 900 MHz to consumer cooking at 2.45 GHz. Power levels up to 1200 W are supported and complemented by a full portfolio of drivers to create the full power line-up needed in any RF Energy application. Benefits • Competitive products to fit all applications covered by LDMOS • Continuous technology improvements meet market needs • Dedicated technology nodes designed around specific application requirements Features • Gen9 / 10 with enhanced VBW performance for 28 - 32 V base-station, aerospace & defense applications • Gen8 / 9 dual stage multiband MMICs • Gen6XR for 50 V ISM applications requiring extreme ruggedness • Gen6 / 9HV for 50 V high power-density for broadcast 42 24/7 RF - Version 2 - 2017 2.2 Best-in-Class GaN for High Frequency Performance With more than 35 years of experience in delivering RF power transistors, Ampleon leads the industry in offering GaN RF power devices through a secure and reliable mainstream supply chain for wireless infrastructure, industrial, scientific and medical (ISM), and aerospace and defense applications. Setting New Performance Boundaries for RF Power Amplifiers GaN products are also called High-Electron Mobility Transistors (HEMT), a name that captures one of the intrinsic benefits of GaN – the high electron drift velocity. However, these transistors are depletion-mode devices, so they are normally on and require a negative gate bias to switch them off. This biasing is not straightforward but Ampleon has proven bias circuitry to support any application. A further advantage of GaN is that it is a very strong semiconductor material, so it is capable of withstanding very high temperatures. Ampleon’s GaN transistors are specified to a maximum temperature of 250 °C, compared to 225 °C for Si LDMOS. With such high temperature capability, there is a greater need to have packages capable of exploiting this feature. For this, customers benefit from Ampleon’s 35-year legacy in RF power products. Simply put, GaN technology makes a step increase in efficiency and power density performance over Si LDMOS in several applications (see figure below). High Efficiency Doherty Architectures Ampleon’s GaN process technology has been developed to support Doherty amplifiers with the combination of high power, high efficiencies, low memory effects, and low pre-distortion due to trapping effects. To create high efficiency Doherty circuits, we developed optimized GaN devices with specific impedance matching in the amplifier circuit to boost the performance. As with our LDMOS solutions, Ampleon supplies Doherty amplifier circuits both as discrete transistor products and integrated as packaged asymmetric Doherty (PAD) products and we are also releasing low power 30 V MMICs for higher frequency applications. Key Features and Benefits GaN vs LDMOS Comparison @ 2.1 GHz • High frequencies and bandwidth up to 6 GHz for 50 V GaN and 12 GHz for 30 V GaN • High efficiency and excellent linearity • High power density • Operation at higher temperatures, without loss of reliability (250 °C compared to 225 °C for Si LDMOS) • Excellent ruggedness Applications • Commercial wireless infrastructure (base stations) • Radar systems and jammers • Broadband and narrowband general-purpose amplifiers • Public mobile radios • ISM applications: test instrumentation and EMC testing 24/7 RF - Version 2 - 2017 43 Technologies Ampleon’s next generation 50 V GaN process technology features best-in-class linearity while at the same time allowing designers to maintain power, ruggedness, and efficiency. Our GaN process is being released in 2017, offering a further increase in power density and performance at 50 V as well as a 30 V GaN node for high frequency applications. GaN technology features best-in-class linearity while at the same time allowing designers to maintain power, ruggedness, and efficiency for both 4G and 4/5G mobile broadband applications as well as several multimarket applications. This enables an uncompromised amplifier design that can minimize component count and reduce amplifier footprint. Our leading back-end assembly facility consistently leverages the high power density of GaN into smaller and more broadband circuitry. Through a broad portfolio of high performance GaN and LDMOS products, Ampleon offers an unbiased choice in enabling optimized designs for your application. 2.3 RF Power Transistor Packages Packaging is an important element in RF power transistors, influencing both the cost-efficiency and performance of a given device. Since peak powers can vary widely, from as low as 5 W to more than 1000 W, a range of package technologies are needed to cover every application. The choice of package format (air-cavity or overmolded plastic), often depends on the design requirements, and any trade-offs to be made between performance and cost. Air-Cavity Packages The traditional package for RF power transistors is the air-cavity package with a ceramic lid. The flange (or heatsink) material has evolved over the years and the most commonly used material today is CPC (Cu/Mo70Cu/Cu), a laminate of Copper and Copper Molybdenum. This material has been selected for its thermal properties, providing a low R th (compared to the Cu-W used earlier) as well as a good CTE (Thermal Expansion Coefficient) match with the silicon or GaN used for the active dies and the internal matching capacitors. The package is made of three parts: flange, ringframe and lid. Active and passive dies are then soldered to the flange and wire bonds are used to create the matching circuits and the connections with the leads. The transistor is then closed by gluing the lid on top. The final step consists of testing the product for compliance to specification. Air-Cavity Ceramic (ACC) Packages In a ceramic air cavity package, the flange is brazed to the ceramic ringframe at high temperatures. The resulting component is known as a header. Air-cavity ceramic packages have proven their reliability and performance over the years and exist in a variety of sizes and power levels. Due to the semi-hermetic nature of the ceramic air cavity packages, they are typically found in Aerospace and Defense products as well as products requiring high reliability and high frequencies. SOT1228A SOT1239B SOT1121B SOT539A Different ceramic packages. For a complete overview, see section 6.1 * Not drawn to scale. ACC Package Structure The Three Components of an ACP Transistor: CPC flange, Polymer Ringframe, Polymer Lid Difference in structure between a ceramic air cavity package and a plastic air cavity package Air-Cavity Plastic (ACP) Packages The structure of the Air Cavity Package (ACP2) is similar to ACC but the lid and the ringframe are made of an engineered plastic instead of ceramic. The ringframe is glued to the flange rather than brazed, and reduces the stress and distortions of the flange. This in turn allows the use of thinner matching capacitors, reducing RF losses both at the gate and the drain. The result is higher gain and efficiency compared to the ACC format. In addition, the use of separate ringframes allows for more variation in lead shape and length with shorter development times. The newest generation ACP3 packages have a further key enhancement by replacing the traditional CPC flange with a Cu flange which gives a 30 % improvement in thermal performance as well as simplifying the board level assembly to provide a highly effective cost-efficient RF package solution. The matched CTE between the Cu flange and the copper on the 44 24/7 RF - Version 2 - 2017 application board also improves reliability. SOT1275-1 Technologies The ACP packages are widely used in modern basestations and RF Energy applications for their good performance and very good price / performance ratio. SOT1278-1 * Not drawn to scale For the complete ACP package overview please see section 6.1 Overmolded Plastic (OMP) Packages A third transistor package family is overmolded plastic (OMP). The package structure is similar to standard plastic power packages, with a copper flange and a molded body, but discrete wire bonds are used in the matching network for improved RF performance. OMP packages have a number of outlines, from the standard HVSON (DFN) package for low power drivers, to our PQFN package for higher power drivers, and the SOT502 format of packages for dual path MMICs, and discretes. OMP is an ideal package for low frequency or low power applications. The usage of industry standard manufacturing equipment makes this also a very cost effective package. PQFN MMIC Driver Discrete Final For the complete OMP package overview please see section 6.1 The wide range of packages offered by Ampleon enables you to select the right device precisely optimized for your application and allows to find the best compromise between cost and performance. 24/7 RF - Version 2 - 2017 45 46 24/7 RF - Version 2 - 2017 Embracing Uncounted Applications 3. RF Product Portfolio Ampleon Product Catalog www.ampleon.com/products New Products RF Product Portfolio 3.1 DEV = in Development RFS = Released for Supply Type Application / description Expected status per May 2017 Planned release DEV RFS RFS RFS RFS RFS RFS RFS RFS DEV RFS RFS RFS DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV Q3-2017 Released Released Released Released Released Released Released Released Q3-2017 Released Released Released Q3-2017 Q4-2017 Q4-2017 Q4-2017 Q4-2017 Q4-2017 Q4-2017 Q4-2017 Q3-2017 Q3-2017 Q4-2017 tbd tbd NEW: RF Power Transistor for Base Station Applications BLC10G18XS-320AVT BLC10G20LS-240PWT BLC10G22LS-240PVT BLC8G09XS-400AVT BLC9G15XS-400AVT BLC9G20LS-160PV BLC9G20XS-160AV BLC9G20XS-400AVT BLC9G20XS-550AVT BLC9G21LS-60AV BLC9G22LS-160VT BLC9G22XS-400AVT BLC9G24XS-170AV BLC9G27XS-380AVT BLC9H10XS-300P BLC9H10XS-350A BLC9H10XS-400A BLC9H10XS-400P BLC9H10XS-600A BLC9H10XS-60P BLC9H10XS-800P BLF9G38-10G BLM8D1822-25B BLM8G1822-20B BLM9D1822-12B BLM9D1822-25B 320 W LDMOS power transistor for base station applications 240 W LDMOS power transistor with enhanced video bandwidth for base station applications 240 W LDMOS power transistor with enhanced video bandwidth for base station applications 400 W LDMOS packaged asymmetric Doherty power transistor for base station applications 400 W LDMOS packaged asymmetric Doherty power transistor for base station applications 160 W LDMOS power transistor with enhanced video bandwidth for base station applications 160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications 400 W LDMOS packaged asymmetric Doherty power transistor for base station applications 550 W LDMOS packaged asymmetric Doherty power transistor for base station applications 20 W plastic LDMOS transistor for base station applications 160 W LDMOS power transistor for base station applications 400 W LDMOS packaged asymmetric Doherty power transistor for base station applications 170 W LDMOS packaged asymmetrical Doherty power transistor for base station applications 380 W LDMOS power transistor for base station applications 300 W HV LDMOS power transistor for base station applications 350 W HV LDMOS power transistor for base station applications 400 W HV LDMOS power transistor for base station applications 400 W HV LDMOS power transistor for base station applications 600 W HV LDMOS power transistor for base station applications 60 W HV LDMOS power transistor for base station applications 800 W HV LDMOS power transistor for base station applications 10 W LDMOS power transistor for base station applications 25 W LDMOS 2-stage fully integrated Doherty MMIC solution for base station applications 20 W LDMOS 2-stage MMIC solution for base station applications 12 W LDMOS 2-stage fully integrated Doherty MMIC solution for base station applications 25 W LDMOS 2-stage fully integrated Doherty MMIC solution for base station applications 24/7 RF - Version 2 - 2017 47 Type BLM9D1822S-25PB BLM9D1822S-25PBG BLM9D1822S-50PB BLM9D1822S-50PBG BLM9D18-25AB BLM9D2325-20AB BLM9D2327-12B BLM9D2327-25B BLM9D2527-20AB BLM9G2325-20AB BLM9G2527-20AB BLP9G0722-20 BLP9G0722-20G BLP9H10S-30 Application / description 25 W LDMOS 2-stage fully integrated Doherty MMIC solution for base station applications 25 W LDMOS 2-stage fully integrated Doherty MMIC solution for base station applications 50 W LDMOS 2-stage fully integrated Doherty MMIC solution for base station applications 50 W LDMOS 2-stage fully integrated Doherty MMIC solution for base station applications 25 W LDMOS 2-stage fully integrated Doherty MMIC solution for base station applications 20 W LDMOS 2-stage MMIC solution for base station applications 12 W LDMOS 2-stage MMIC solution for base station applications 20 W LDMOS 2-stage fully integrated Doherty MMIC solution 20 W LDMOS 2-stage fully integrated Doherty MMIC for massive MIMO or small cell applications 20 W LDMOS 2-stage MMIC solution for base station applications 20 W LDMOS 2-stage fully integrated Doherty MMIC solution for base station applications 20 W plastic LDMOS power transistor for base station applications 20 W plastic LDMOS power transistor for base station applications 30 W HV LDMOS power transistor for base station applications Expected status per May 2017 Planned release DEV DEV DEV DEV DEV DEV DEV DEV RFS DEV DEV DEV DEV DEV tbd tbd tbd tbd Q4-2017 tbd tbd tbd Released tbd Released Released Released Q1-2018 RFS RFS RFS RFS RFS DEV DEV DEV DEV RFS RFS RFS DEV DEV RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS DEV DEV Released Released Released Released Released Q3-2017 Q3-2017 Q3-2017 Q3-2017 Released Released Released Q3-2017 Q3-2017 Released Released Released Released Released Released Released Released Released Released Q4-2017 Q4-2017 DEV DEV DEV Q4-2017 Q4-2017 Q2-2017 DEV DEV DEV DEV Q2-2017 Q2-2017 Q2-2017 Q2-2017 DEV DEV tbd tbd RFS RFS RFS RFS Released Released Released Released NEW: RF Power LDMOS Transistors for FM/UHF/VHF/ISM and RF Energy Applications BLC10M6XS200 BLC2425M8LS300P BLC2425M9LS250 BLF0910H6L500 BLF0910H6LS500 BLF189XRA BLF189XRAS BLF189XRB BLF189XRBS BLF2425M9LS140 BLF888E BLF888ES BLF898 BLF898S BLP05H6700XR BLP05H6700XRG BLP10H6120P BLP10H6120PG BLP10H630P BLP10H630PG BLP10H660P BLP10H660PG BLP10H690P BLP10H690PG BLC2425M9LS700P BLC2425M9LS700PV 200 W LDMOS power transistor for RF lighting applications 300 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications 250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications 500 W LDMOS power transistor for industrial applications 500 W LDMOS power transistor for industrial applications 1700 W extremely rugged LDMOS power transistor for broadcast and industrial applications 1700 W extremely rugged LDMOS power transistor for broadcast and industrial applications 1900 W extremely rugged LDMOS power transistor for industrial applications 1900 W extremely rugged LDMOS power transistor for industrial applications 140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications 750 W LDMOS RF power transistor for broadcast Doherty transmitter applications 750 W LDMOS RF power transistor for broadcast Doherty transmitter applications 900 W LDMOS RF power transistor for broadcast Doherty and class AB transmitter applications 900 W LDMOS RF power transistor for broadcast Doherty and class AB transmitter applications 700 W extra rugged LDMOS power transistor optimized for broadcast, industrial, A&D applications 700 W extra rugged LDMOS power transistor optimized for broadcast, industrial, A&D applications 120 W LDMOS power transistor for broadcast and industrial applications 120 W LDMOS power transistor for broadcast and industrial applications 30 W LDMOS power transistor for broadcast and industrial applications 30 W LDMOS power transistor for broadcast and industrial applications 60 W LDMOS power transistor for broadcast and industrial applications 60 W LDMOS power transistor for broadcast and industrial applications 90 W LDMOS power transistor for broadcast and industrial applications 90 W LDMOS power transistor for broadcast and industrial applications 1200 W LDMOS power transistor for industrial applications 1200 W LDMOS power transistor for industrial applications New: LDMOS Pallets for RF Energy Applications BPC2425M9X2S250 BPC2425M9XS250 BPC05M9XS200 2-stage 250 W / 2.5 GHz RF Energy Pallet 1-stage 250 W / 2.5 GHz RF Energy Pallet 2-stage 200 W / 433 MHz RF Energy Pallet New: RF Power LDMOS Transistors for Avionics Applications BLA9G1011L-300 BLA9G1011LS-300 BLA9G1011L-300G BLA9G1011LS-300G 300 W LDMOS power transistor for avionics applications 300 W LDMOS power transistor for avionics applications 300 W LDMOS power transistor for avionics applications 300 W LDMOS power transistor for avionics applications New: RF Power LDMOS Transistors for L-band Applications BLL9G1214L-600 BLL9G1214LS-600 600 W LDMOS power transistor for L-band radar applications 600 W LDMOS power transistor for L-band radar applications New: RF Power LDMOS Transistors for S-band Applications BLS9G2729L-350 BLS9G2729LS-350 BLS9G2731L-400 BLS9G2731LS-400 48 350 W LDMOS power transistor for S-band applications 350 W LDMOS power transistor for S-band applications 400 W LDMOS power transistor for S-band applications 400 W LDMOS power transistor for S-band applications 24/7 RF - Version 2 - 2017 Type BLS9G2735L-50 BLS9G2735LS-50 BLS9G2934L-400 BLS9G2934LS-400 BLS9G3135L-400 BLS9G3135LS-400 Application / description Single ended 50 W LDMOS power transistor for S-band radar applications Single ended 50 W LDMOS power transistor for S-band radar applications 400 W LDMOS power transistor for S-band radar applications 400 W LDMOS power transistor for S-band radar applications 400 W LDMOS power transistor for S-band radar applications 400 W LDMOS power transistor for S-band radar applications Expected status per May 2017 Planned release DEV DEV RFS RFS RFS RFS Q2-2017 Q2-2017 Released Released Released Released DEV DEV DEV Q2-2017 Q2-2017 Q2-2017 BPS9G2934X-400 BPS9G2933X-450 BPS9G3135X-400 400 W S-band Pallet for L / S-band applications 450 W S-band Pallet for L / S-band applications 400 W S-band Pallet for L / S-band applications RF Product Portfolio New: LDMOS Pallets for L / S-band Radar Applications 24/7 RF - Version 2 - 2017 49 3.2 RF Power Transistors for Mobile Broadband RF power transistor selection guide on www.ampleon.com/products/mobile-broadband Easy-to-use parametric filters help you choose the right RF power transistor for your design Device Naming Conventions for Mobile Broadband (applicable to Gen7 onwards) B L C 10 G F LS P1dB A B G V T Italic = Optional T = video decoupling capacitor inside V = V-leads for external decoupling W = Supply thru decoupling leads Gullwing-shaped leads Current sense lead A = Asymmetric doherty (PAD); asymmetric integrated Doherty P = Symmetric doherty - push-pull configuration P1dB power level @ supply voltage of Datasheet; PAD = P3dB None: PQFN LS: ACC / ACP2 Low Rth (CPC flange) S: OMP / TO270 XS: ACP3 Extremely low Rth (CU flange) Frequency, example 22 = 2200 MHz, 1822 = 1800 to 2200 MHz G: 28-32 V supply voltage D: Integrated Doherty (28 V) H: 50 V supply voltage U: 12 V supply voltage Technology generation F: Ceramic package C: Air-cavity plastic (ACP) package M: MMIC P: Overmolded plastic (OMP) package L: High-frequency power transistor B: Semiconductor die made of Si C: Semiconductor die made of GaN 3.2.1 0.4 - 1.0 GHz LDMOS Transistors Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) PL(AV) (W) Test signal BLP7G22-05 BLP8G27-5 BLP7G22-10 BLP8G27-10 BLM8G0710S-15PB BLM8G0710S-15PBG BLM8G0710S-30PB BLM8G0710S-30PBG BLP9H10S-30* BLM8G0710S-45AB BLM8G0710S-45ABG BLP8G10S-45P BLP8G10S-45PG BLM8G0710S-60PB BLM8G0710S-60PBG BLC9H10XS-60P* BLF8G10L-160 SOT1179-2 SOT1371-1 SOT1179-2 SOT1371-1 SOT1211-2 SOT1212-2 SOT1211-2 SOT1212-2 SOT1482 SOT1211-2 SOT1212-2 SOT1223-2 SOT1224-2 SOT1211-2 SOT1212-2 SOT1273-7 SOT502A 700 700 700 700 700 700 700 700 700 700 700 700 700 700 700 700 920 2700 2700 2700 2700 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 960 5 5 10 10 15 (1) 15 (1) 30 (1) 30 (1) 30 45 (1) 45 (1) 45 45 60 (1) 60 (1) 60 (1) 160 28 28 28 28 28 28 28 28 50 28 28 28 28 28 28 50 30 23 19 25 22 27 27 24 24 tbd 23.4 23.4 19.8 19.8 23.4 23.4 tbd 29 16 19 17.4 17 36 36 35.7 35.7 tbd 35.6 35.6 20.8 20.8 35.6 35.6 tbd 19.7 1 0.3 2 2 1.5 1.5 3 3 tbd 6 6 2.5 2.5 6 6 tbd 35 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA tbd 1-c W-CDMA 1-c W-CDMA 2-c W-CDMA 2-c W-CDMA 1-c W-CDMA 1-c W-CDMA tbd 2-c W-CDMA (1) P3dB * Check status in section 3.1, as this type is not yet released for mass production 50 24/7 RF - Version 2 - 2017 0.4 - 1.0 GHz LDMOS Transistors (continued) Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) PL(AV) (W) Test signal BLF8G10LS-160 BLF8G10LS-160V BLP8G05S-200 BLP8G05S-200G BLF7G10LS-250 BLF8G09LS-270W BLF8G09LS-270GW BLF8G10LS-270GV BLF8G10LS-270 BLF8G10LS-270V BLP8G10S-270PW BLF8G10LS-300P BLC9H10XS-300P* BLC9H10XS-350A* BLC9H10XS-400A* BLC8G09XS-400AVT BLF8G09LS-400PW BLF8G09LS-400PGW BLC9H10XS-400P* BLC9H10XS-600A* BLC9H10XS-800P* SOT502B SOT1244B SOT1138-2 SOT1204-2 SOT502B SOT1244B SOT1244C SOT1244C SOT502B SOT1244B SOT1221-2 SOT539B SOT1273-7 SOT1273-7 SOT1273-7 SOT1258-7 SOT1242B SOT1242C SOT1273-7 SOT1250-1 SOT1252-7 920 925 400 400 920 716 716 790 820 790 700 700 700 600 700 859 716 716 700 700 700 960 960 500 500 960 960 960 960 960 960 900 1000 1000 1000 1000 960 960 960 1000 1000 1000 160 160 200 200 250 270 270 270 270 270 270 300 300 (1) 350 (1) 400 (1) 400 (1) 400 400 400 (1) 600 (1) 800 (1) 30 30 28 28 30 28 28 28 28 28 28 28 50 50 50 32 28 28 50 50 50 29 30 77 77 30.5 33 33 31 33 31 46 32 tbd tbd tbd 47.5 30 30 tbd tbd tbd 19.7 19.9 21 21 19.5 20 20 19.5 18.5 19.5 17.3 20.5 tbd tbd tbd 17.4 20.6 20.6 tbd tbd tbd 35 35 210 210 60 67 67 67 67 67 56 65 tbd tbd tbd 93 95 95 tbd tbd tbd 2-c W-CDMA 2-c W-CDMA CW CW 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 1-c W-CDMA 2-c W-CDMA tbd tbd tbd 1-c W-CDMA 2-c W-CDMA 2-c W-CDMA tbd tbd tbd 3.2.2 1.3 - 1.7 GHz LDMOS Transistors Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) PL(AV) (W) Test signal BLP7G22-05 BLP8G27-5 BLP7G22-10 BLP8G27-10 BLC9G15LS-400AVT BLC9G15XS-400AVT SOT1179-2 SOT1371-1 SOT1179-2 SOT1371-1 SOT1258-3 SOT1258-7 700 700 700 700 1452 1452 2700 2700 2700 2700 1511 1511 5 5 10 10 400 (1) 400 (1) 28 28 28 28 32(1) 32(1) 23 19 25 22 51 48 16 19 17.4 17 16.2 16.5 1 0.3 2 2 93 93 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 1-c W-CDMA 1-c W-CDMA 3.2.3 RF Product Portfolio 3.2.1 1.8 - 2.0 GHz LDMOS Transistors Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) PL(AV) (W) Test signal BLP7G22-05 BLP8G27-5 BLP7G22-10 BLP8G27-10 BLP9G0722-20 BLP9G0722-20G BLM8G1822-20B* BLM7G1822S-20PB BLM7G1822S-20PBG BLM8D1822-25B* BLM7G1822S-40AB BLM7G1822S-40PB BLM7G1822S-40PBG BLM8D1822S-50PB BLM8D1822S-50PBG BLC9G21LS-60AV* BLM7G1822S-80AB BLM7G1822S-80ABG BLM7G1822S-80PB BLM7G1822S-80PBG BLC9G20LS-120V BLF8G20LS-160V SOT1179-2 SOT1371-1 SOT1179-2 SOT1371-1 SOT1482-1 SOT1483-1 SOT1462-3 SOT1211-1 SOT1212-1 SOT1462-1 SOT1211-2 SOT1211-1 SOT1212-1 SOT1211-2 SOT1212-2 SOT1275-3 SOT1211-1 SOT1212-1 SOT1211-2 SOT1212-2 SOT1275-3 SOT1239B 700 700 700 700 400 400 1800 1805 1805 1800 1805 1805 1805 1805 1805 1800 1805 1805 1805 1805 1805 1800 2700 2700 2700 2700 2700 2700 2200 2170 2170 2200 2170 2170 2170 2170 2170 2025 2170 2170 2170 2170 1995 2000 5 5 10 10 20 20 20 (1) 20 (1) 20 (1) 25 (1) 40 (1) 40 (1) 40 (1) 50 (1) 50 (1) 60 (1) 80 (1) 80 (1) 80 (1) 80 (1) 120 (1) 160 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 23 19 25 22 21 21 tbd 23 23 tbd 25.5 25 25 37 37 tbd 24 24 24 24 31 34 16 19 17.4 17 19 19 tbd 32.3 32.3 tbd 31.3 31.5 31 26.5 26.5 tbd 28.3 28.3 28 28 19.2 20 1 0.3 2 2 35 35 tbd 2 2 tbd 2 4 4 5 5 tbd 8 8 8 8 30 35.5 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 1-c W-CDMA 1-c W-CDMA tbd 1-c W-CDMA 1-c W-CDMA tbd 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA tbd 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 2-c W-CDMA 2-c W-CDMA P3dB * Check status in section 3.1, as this type is not yet released for mass production (1) 24/7 RF - Version 2 - 2017 51 3.2.3 1.8 - 2.0 GHz LDMOS Transistors (continued) Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) PL(AV) (W) Test signal BLC9G20XS-160AV BLC9G20LS-160PV BLC8G21LS-160AV BLF9G20LS-160V BLF8G19LS-170BV BLF7G20LS-200 BLF8G20LS-220 BLF8G20LS-230V BLC9G20LS-240PV BLC10G20LS-240PWT BLF7G20LS-250P BLC8G20LS-310AV BLC10G18XS-320AVT* BLC9G20LS-361AVT BLC8G20LS-400AV BLF8G20LS-400PV BLF8G20LS-400PGV BLC9G20XS-400AVT BLC9G20LS-470AVT BLC9G20XS-550AVT SOT1275-3 SOT1275-1 SOT1275-1 SOT1120B SOT1120B SOT502B SOT502B SOT1239B SOT1275-3 SOT1275-3 SOT539B SOT1258-3 SOT1258-7 SOT1258-3 SOT1258-3 SOT1242B SOT1242C SOT1258-7 SOT1258-3 SOT1258-7 1805 1805 1805 1800 1800 1805 1800 1800 1805 1805 1805 1900 1800 1805 1800 1805 1805 1805 1805 1805 1880 2000 2025 2000 1990 1990 2000 2000 1995 1995 1880 2000 1900 1990 2000 1995 1995 1880 1990 1880 (1) 160 160 (1) 160 (1) 160 170 200 220 230 240 (1) 240 (1) 250 310 (1) 320 (1) 360 (1) 400 (1) 400 400 400 (1) 470 (1) 550 (1) 30 28 28 28 32 28 28 28 28 28 28 28 32 28 32 28 28 32 28 28 47 34.5 45 33.5 32 33 34 31.7 30 30 35 42.5 tbd 47.5 44 28 28 45 47.5 44.5 16.6 19.8 15 19.8 18 18 18.9 18 18 19.3 18 16.9 tbd 15.7 15.5 19 19 16.2 15.7 15.4 28 38 22.5 35.5 60 55 55 55 60 60 70 56 tbd 56.2 85 95 95 87 80 85 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 1-c W-CDMA tbd 1-c W-CDMA 1-c W-CDMA 2-c W-CDMA 2-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 3.2.4 2.0 - 2.2 GHz LDMOS Transistors Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) PL(AV) (W) Test signal BLP7G22-05 BLP8G27-5 BLP7G22-10 BLP8G27-10 BLM7G1822S-20PB BLM7G1822S-20PBG BLM7G1822S-40ABG BLM7G1822S-40PB BLM7G1822S-40AB BLM7G1822S-40PBG BLM7G1822S-80ABG BLM7G1822S-80PBG BLM7G1822S-80AB BLM7G1822S-80PB BLF8G22LS-140 BLP8G21S-160PV BLC8G21LS-160AV BLC9G22LS-160VT BLF7G22LS-200 BLF8G22LS-200V BLF8G22LS-200GV BLF8G22LS-205V BLF8G22LS-220 BLF8G22LS-240 BLC10G22LS-240PVT BLF7G22LS-250P BLF8G22LS-270 BLF8G22LS-270GV BLF8G22LS-270V BLC9G22XS-400AVT BLC8G22LS-450AV SOT1179-2 SOT1371-1 SOT1179-2 SOT1371-1 SOT1211-1 SOT1212-1 SOT1212-2 SOT1211-1 SOT1211-2 SOT1212-1 SOT1212-1 SOT1212-2 SOT1211-1 SOT1211-2 SOT502B SOT1221-2 SOT1275-1 SOT1271-3 SOT502B SOT1244B SOT1244C SOT1239B SOT502B SOT502B SOT1275-3 SOT539B SOT502B SOT1244C SOT1244B SOT1258-7 SOT1258-3 700 700 700 700 1805 1805 1805 1805 1805 1805 1805 1805 1805 1805 2000 1880 1805 2110 2110 2110 2110 2100 2110 2110 2110 2110 2110 2110 2110 2110 2110 2700 2700 2700 2700 2170 2170 2170 2170 2170 2170 2170 2170 2170 2170 2200 2025 2025 2170 2170 2170 2170 2200 2170 2170 2220 2170 2170 2170 2170 2200 2170 5 5 10 10 20 (1) 20 (1) 40 (1) 40 (1) 40 (1) 40 (1) 80 (1) 80 (1) 80 (1) 80 (1) 140 160 160 (1) 160 (1) 200 200 200 205 220 240 240 (1) 250 270 270 270 400 (1) 450 (1) 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 32 28 23 19 25 22 23 23 25.5 25 25.5 25 24 24 24 24 32.5 31 45 33 31 29 29 32.5 33 28.5 30 31 30 29 29 45 41 16 19 17.4 17 32.3 32.3 31.3 31.5 31.3 31 28.3 28 28.3 28 18.5 17.5 15 18.4 18.5 19 19 18.3 17 19 19.7 18.5 17.7 17.3 17.3 15.3 14 1 0.3 2 2 2 2 4 4 4 4 8 8 8 8 33 20 22.5 35 55 55 55 50.1 55 55 60 70 80 80 80 93 85 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 2-c W-CDMA 2-c W-CDMA 1-c W-CDMA 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 1-c W-CDMA 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 1-c W-CDMA 1-c W-CDMA P3dB * Check status in section 3.1, as this type is not yet released for mass production (1) 52 24/7 RF - Version 2 - 2017 2.3 - 2.4 GHz LDMOS Transistors Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) PL(AV) (W) Test signal BLP7G22-05 BLP8G27-5 BLP8G27-10 BLM9D2325-20AB* BLM9D2327-25B* BLF6G27LS-40P BLF6G27LS-40PG BLC8G27LS-60AV BLF8G24LS-100V BLF8G24LS-100GV BLF7G24LS-100 BLF7G24LS-140 BLF8G24LS-150V BLF8G24LS-150GV BLC9G24XS-170AV BLC8G24LS-241AV SOT1179-2 SOT1371-1 SOT1371-1 SOT1462-1 SOT1462-1 SOT1121B SOT1121E SOT1275-3 SOT1244B SOT1244C SOT502B SOT502B SOT1244B SOT1244C SOT1275-3 SOT1252-1 700 700 700 2300 2300 2500 2500 2300 2300 2300 2300 2300 2300 2300 2300 2300 2700 2700 2700 2500 2700 2700 2700 2690 2400 2400 2400 2400 2400 2400 2400 2400 5 5 10 20 (1) 25 (1) 40 40 60 (1) 100 100 100 140 150 150 170 (1) 240 (1) 28 28 28 28 28 28 28 28 28 28 28 28 28 28 30 28 23 19 22 tbd tbd 37 37 44 32 32 27 26.5 33 33 47 43 16 19 17 tbd tbd 17.5 17.5 15 19 19 18 18.5 19 19 15.5 14.5 1 0.3 2 tbd tbd 20 20 7 25 25 20 30 45 45 28 56 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA tbd tbd 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 2-c W-CDMA 2-c W-CDMA NCDMA/IS95 NCDMA/IS95 2-c W-CDMA 2-c W-CDMA 1-c W-CDMA 1-c W-CDMA 3.2.6 2.5 - 2.7 GHz LDMOS Transistors Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) PL(AV) (W) Test signal BLP7G22-05 BLP8G27-5 BLP8G27-10 BLM9D2527-20AB BLM9D2327-25B* BLC8G27LS-60AV BLF7G27LS-100 BLF8G27LS-100GV BLF8G27LS-100 BLF8G27LS-100V BLC8G27LS-100AV BLF7G27LS-140 BLF8G27LS-140 BLF8G27LS-140V BLC8G27LS-140AV BLF8G27LS-150V BLF8G27LS-150GV BLC9G27LS-151AV BLC8G27LS-160AV BLC8G27LS-180AV BLC8G27LS-210PV BLC8G27LS-240AV BLC9G27XS-380AVT* SOT1179-2 SOT1371-1 SOT1371-1 SOT1462-1 SOT1462-1 SOT1275-3 SOT502B SOT1244C SOT502B SOT1244B SOT1275-1 SOT502B SOT502B SOT1120B SOT1275-1 SOT1244B SOT1244C SOT1275-3 SOT1275-1 SOT1275-3 SOT1251-3 SOT1252-1 SOT1258-7 700 700 700 2500 2300 2300 2500 2500 2500 2500 2496 2500 2500 2600 2496 2500 2500 2496 2496 2496 2500 2500 2500 2700 2700 2700 2700 2700 2690 2700 2700 2700 2700 2690 2700 2700 2700 2690 2700 2700 2690 2690 2690 2700 2700 2700 5 5 10 20 (1) 25 (1) 60 (1) 100 100 100 100 100 (1) 140 140 140 140 (1) 150 150 150 (1) 160 (1) 180 (1) 200 (1) 240 (1) 380 (1) 28 28 28 28 28 28 28 28 28 28 28 28 32 32 28 28 28 28 28 28 28 28 32 23 19 22 43 tbd 44 28 28 28 28 44 22 32 30 43 30 30 46 41 43.5 30 37 tbd 16 19 17 28 tbd 15 18 17 17 17 15.5 16.5 17.4 17.4 14.5 18 18 15.6 14.3 14 17 14 tbd 1 0.3 2 3 tbd 7 20 25 25 25 17.8 30 45 45 28 45 45 28 31.6 28 65 56 tbd 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 1-c W-CDMA tbd 1-c W-CDMA NCDMA/IS95 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 1-c W-CDMA NCDMA/IS95 2-c W-CDMA 2-c W-CDMA 1-c W-CDMA 2-c W-CDMA 2-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 2-c W-CDMA 1-c W-CDMA tbd 3.2.7 RF Product Portfolio 3.2.5 3.4 - 3.8 GHz LDMOS Transistors Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) PL(AV) (W) Test signal BLF9G38-10G* BLF6G38S-25 BLF6G38LS-50 BLF8G38LS-75V BLF9G38LS-90P SOT975C SOT608B SOT502B SOT1239B SOT1121B 3400 3400 3400 3400 3400 3800 3800 3800 3800 3600 10 25 50 75 90 28 28 28 30 28 tbd 24 23 26 28 tbd 15 14 15.5 15 tbd 4.5 9 20 20 tbd NCDMA/IS95 NCDMA/IS95 1-c W-CDMA 1-c W-CDMA P3dB * Check status in section 3.1, as this type is not yet released for mass production (1) 24/7 RF - Version 2 - 2017 53 3.2.8 LDMOS Doherty Designs Frequency band (MHz) PPEAK (dBm) POUT-AVG (dBm) 462 - 468 MHz 462-468 56 617-652 MHz 617-652 54.8 716 - 768 MHz 716 - 768 56 758 - 803 MHz 758 - 803 55.6 728 - 821 MHz 728 - 768 48.3 790 - 821 55.7 728 - 768 56 717 - 960 MHz 717 - 960 tbd 869 - 960 MHz 869 - 895 47.5 869 - 895 58.5 869 - 895 59.9 925 - 960 46 925 - 960 47.4 920 - 960 55.2 920 - 960 56.4 925 - 960 56.3 920 - 960 57.1 920 - 960 57.1 920 - 960 57.3 1476 - 1555 MHz 1452 - 1501 56.2 1452 - 1501 56.2 1805 - 1880 MHz (DCS) 1805 - 1880 45 (dual) 1805 - 2025 52.9 1805 - 1880 56.2 1805 - 1880 56.2 1805 - 1880 57.3 1805 - 1880 56 1805 - 1880 56.5 1805 - 1880 57.5 1805 - 1880 56.6 1805 - 1880 57.6 1805 - 1880  58.3 1805 - 1880 58.2 1930 - 1990 MHz (PCS) 1930 - 1990 57.3 1930 - 1990 56.1 1930 - 1990 58.5 1805 - 2025 MHz (TD-SCDMA) 1805-2025 52.9 2110 - 2170 MHz (UMTS / LTE) 2110 - 2170 45 (dual) 2113 - 2170 52.6 2110 - 2170 55.6 2112 - 2170 56.2 2110 - 2170 57.6 2110- 2170 58 2110 - 2200 58.5 2300 - 2400 MHz (LTE) 2300 - 2400 47 2300 - 2400 50.4 2300 - 2400 52.6 2300 - 2400 56 54 VDS (V) Gp (dB) ηD (%) Type Main transistor Peak transistor 48.5 28 18.7 51.5 SYM BLP8G05S-200 BLP8G05S-200 47.5 24 17.8 53.7 SYM BLP8G10S-270PW 47.5 28 18.1 48.6 SYM BLP8G10S-270PW 48.4 28 17.8 47 SYM BLF8G10LS-160 41 47.9 47.7 28 28 28 19 19.3 19.4 45 44 44 SYM SYM SYM BLP8G10S-45P BLF8G10L-300P BLF8G10L-300P tbd 50 tbd tbd SYM BLC9H10XS-400P 39.2 50.5 52 35.5 39.4 48 49.3 48.4 49 49 49.3 28 28 28 30 28 30 28 28 30 28 30 18 16.4 15.2 20 18 16.9 15.1 16 16.1 15 16 47 49 48 38 47.3 46.3 47 48.2 46.7 48 50 SYM SYM ASYM SYM SYM SYM SYM ASYM ASYM ASYM ASYM BLP8G10S-45P BLF8G10LS-270 BLF8G10LS-270 BLP7G22-10 BLP8G10S-45P BLF8G10LS-160V BLF8G09LS-400PW BLC8G09LS-400AW BLF8G10LS-160 BLF8G10LS-160 BLF8G10LS-160 47.5 47.5 28 28 18 18 50.1 50.1 ASYM ASYM BLC9G15XS-400AVT BLC9G15LS-400AVT 37 44.5 49.3 49 50.5 47.8 49.2 49.7 49 50 50 50.5 28 28 28 28 30 28 28 32 28 28 30 28 26 15.8 15 15 17 16.6 16.3 15.5 15 15.5  15.3 14.2 37 50.6 47.5 52.3 50 50.1 49.8 47 50.3 48 50 50 SYM ID ASYM SYM ASYM ASYM ASYM ASYM ASYM ASYM 3W ASYM ASYM 3W ASYM BLM8D1822S-50PB(G) BLC8G21LS-160AV BLF8G20LS-200V BLF8G19LS-170BV BLF8G20LS-220 BLC9G20LS-361AVT BLC9G20LS-470AVT BLC9G20XS-400AVT BLC9G20LS-160V BLC9G20XS-550AVT BLC9G20LS-160V BLF8G20LS-220 BLC9G20LS-470AVT peak 1 and peak 2 2x BLF8G20LS-220 50.5 47.5 50.7 30 28 32 17 16.4 15.9 50 50 44 ASYM 3WAY 3WAY BLF8G20LS-220 BLC9G20LS-120V BLF8G19LS-170BV BLF8G20LS-220 BLC9G20LS-240PV peak1 and peak 2 2x BLF8G19LS-170BV 44.5 28 15.8 50.6 ASYM BLC8G21LS-160AV 37 44.5 49 48.4 50 50 50.5 28 28 28 28 28 28 28 26 16.4 15 14.2 17.2 15 14 37 48.2 52 46.5 40 52 46 SYM ID ASYM ASYM ASYM SYM ASYM SYM 3W BLM8D1822S-50PB(G) BLC8G21LS-160AV BLF8G22LS-140 BLC9G22XS-400AVT BLF8G22LS-200V BLC9G22LS-160V BLC9G22LS-120VT 38.5 42 44.5 48 26 27 28 28 14.2 15.2 15.5 15 48.5 47.3 47 46 ASYM ASYM ASYM ASYM BLC8G27LS-60AV BLC8G27LS-100AV BLC9G27XS-170AV BLC8G24LS-241AV 24/7 RF - Version 2 - 2017 BLF8G10LS-160 BLF8G10LS-270 2x BLF8G10LS-270 BLP7G22-10 BLF8G10LS-160V BLC8G09LS-400AW BLF7G10LS-250 2x BLF8G10LS-160 BLF7G10LS-250 BLF8G20LS-200V BLF8G20LS-220 BLF8G20LS-220 BLC9G20LS-361AVT peak 1 and peak 2 BLF8G22LS-220 BLF8G22LS-200V BLC9G22XS400AVT BLC9G22LS-240VT peak 1 and peak2 LDMOS Doherty Designs (continued) Frequency band (MHz) PPEAK (dBm) 2500 - 2700 MHz (LTE) 2530 - 2630 53 2620 - 2690 57.5 2545 - 2660 54 2620 - 2690 56.2 2496 - 2690 47.5 2496 - 2690  50.5 2496 - 2690 52.3 2496 - 2690 57.6 3300 - 3800 MHz (TDD-LTE) 3550 - 3700 43.5 3400 - 3600 50.3 3400 - 3700 52 3.2.9 POUT-AVG (dBm) VDS (V) Gp (dB) ηD (%) Type Main transistor 45 48 46.5 48 39.5  41.5 44.5 49.7 28 28 28 32 26 28 28 30 14 13 15.2 15.2 14.5  15.5 15 14.5 43 37 45 39.1 50 42 50 37.5 ASYM ASYM SYM SYM ASYM ASYM ASYM ASYM BLC8G27LS-160AV BLF8G27LS-140G BLF8G27LS-100V BLF8G27LS-140V BLC8G27LS-60AV BLC8G27LS-100AV BLC9G27LS-151AV BLC8G27LS-210PV 36 42.5 44.5 30 28 28 15 13.3 12.5 37 38 35 SYM SYM SYM BLF9G38LS-10G BLF9G38LS-90P BLF8G38LS-75V Peak transistor 2x BLF8G27LS-140G BLF8G27LS-100V BLF8G27LS-140V BLF8G27LS-150V peak 1 and peak 2 BLF9G38LS-10G BLF8G38LS-75V Single Package Asymmetric Doherty (PAD) LDMOS Transistors Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) PL(AV) (W) Test signal BLC8G27LS-60AV BLC9G21LS-60AV* BLC8G27LS-100AV BLC8G27LS-140AV BLC9G27LS-151AV BLC9G20XS-160AV BLC8G21LS-160AV BLC8G27LS-160AV BLC9G24XS-170AV BLC8G27LS-180AV BLC8G24LS-241AV BLC8G27LS-240AV BLC8G20LS-310AV BLC9G20LS-361AVT BLC9G27XS-380AVT* BLC8G09XS-400AVT BLC9G15LS-400AVT BLC8G20LS-400AV BLC9G20XS-400AVT BLC9G22XS-400AVT BLC8G22LS-450AV BLC9G20LS-470AVT BLC9G20XS-550AVT BLC10G18XS-320AVT* SOT1275-3 SOT1275-3 SOT1275-1 SOT1275-1 SOT1275-3 SOT1275-3 SOT1275-1 SOT1275-1 SOT1275-3 SOT1275-3 SOT1252-1 SOT1252-1 SOT1258-3 SOT1258-3 SOT1258-7 SOT1258-7 SOT1258-3 SOT1258-3 SOT1258-7 SOT1258-7 SOT1258-3 SOT1258-3 SOT1258-7 SOT1258-7 2300 1800 2496 2496 2496 1805 1805 2496 2300 2496 2300 2500 1900 1805 2500 859 1452 1800 1805 2110 2110 1805 1805 1800 2690 2025 2690 2690 2690 1880 2025 2690 2400 2690 2400 2700 2000 1990 2700 960 1511 2000 1880 2200 2170 1990 1880 1900 60 60 (1) 100 (1) 140 (1) 150 (1) 160 (1) 160 (1) 160 (1) 170 (1) 180 (1) 240 (1) 240 (1) 310 (1) 360 (1) 380 (1) 400 (1) 400 (1) 400 (1) 400 (1) 400 (1) 450 (1) 470 (1) 550 (1) 320 (1) 28 28 28 28 28 30 28 28 30 28 28 28 28 28 32 32 32 32 32 32 28 28 28 32 44 tbd 44 43 46 47 45 41 47 43.5 43 37 42.5 47.5 tbd 47.5 51 44 45 45 41 47.5 44.5 tbd 15 tbd 15.5 14.5 15.6 16.6 15 14.3 15.5 14 14.5 14 16.9 15.7 tbd 17.4 16.2 15.5 16.2 15.3 14 15.7 15.4 tbd 7 tbd 17.8 28 28 28 22.5 31.6 28 28 56 56 56 56.2 tbd 93 93 85 87 93 85 80 85 tbd 1-c W-CDMA tbd 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA tbd 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA tbd (1) RF Product Portfolio 3.2.8 3.2.10 Overmolded Plastic (OMP) LDMOS Transistors Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) PL(AV) (W) Test signal BLP9G0722-20 BLP9G0722-20G BLP8G10S-45PG BLP8G10S-45P BLP8G05S-200 BLP8G05S-200G BLP8G10S-270PW SOT1482-1 SOT1483-1 SOT1224-2 SOT1223-2 SOT1138-2 SOT1204-2 SOT1221-2 400 400 700 700 400 400 700 2700 2700 1000 1000 500 500 900 20 20 45 45 200 200 270 28 28 28 28 28 28 28 21 21 19.8 19.8 77 77 46 19 19 20.8 20.8 21 21 17.3 35 35 2.5 2.5 210 210 56 1-c W-CDMA 1-c W-CDMA 2-c W-CDMA 2-c W-CDMA CW CW 1-c W-CDMA P3dB * Check status in section 3.1, as this type is not yet released for mass production (1) 24/7 RF - Version 2 - 2017 55 3.2.11 MMIC LDMOS Transistors Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) PL(AV) (W) Test signal BLM8G0710S-15PB BLM8G0710S-15PBG BLM7G1822S-20PB BLM7G1822S-20PBG BLM9D2325-20AB* BLM9D2527-20AB BLM8D1822-25B* BLM9D2327-25B* BLM8G0710S-30PB BLM8G0710S-30PBG BLM7G1822S-40ABG BLM7G1822S-40PB BLM7G1822S-40AB BLM7G1822S-40PBG BLM8G0710S-45AB BLM8G0710S-45ABG BLM8D1822S-50PB BLM8D1822S-50PBG BLM8G0710S-60PB BLM8G0710S-60PBG BLM7G1822S-80ABG BLM7G1822S-80PBG BLM7G1822S-80AB BLM7G1822S-80PB SOT1211-2 SOT1212-2 SOT1211-1 SOT1212-1 SOT1462-1 SOT1462-1 SOT1462-1 SOT1462-1 SOT1211-2 SOT1212-2 SOT1212-2 SOT1211-1 SOT1211-2 SOT1212-1 SOT1211-2 SOT1212-2 SOT1211-2 SOT1212-2 SOT1211-2 SOT1212-2 SOT1212-1 SOT1212-2 SOT1211-1 SOT1211-2 700 700 1805 1805 2300 2500 1800 2300 700 700 1805 1805 1805 1805 700 700 1805 1805 700 700 1805 1805 1805 1805 1000 1000 2170 2170 2500 2700 2200 2700 1000 1000 2170 2170 2170 2170 1000 1000 2170 2170 1000 1000 2170 2170 2170 2170 15 15 (1) 20 (1) 20 (1) 20 (1) 20 (1) 25 (1) 25 (1) 30 (1) 30 (1) 40 (1) 40 (1) 40 (1) 40 (1) 45 (1) 45 (1) 50 (1) 50 (1) 60 (1) 60 (1) 80 (1) 80 (1) 80 (1) 80 (1) 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 27 27 23 23 tbd 43 tbd tbd 24 24 25.5 25 25.5 25.5 23.4 23.4 37 37 23.4 23.4 24 24 24 24 36 36 32.3 32.3 tbd 28 tbd tbd 35.7 35.7 31.3 31.5 31.3 31.3 35.6 35.6 26.5 26.5 35.6 35.6 28.3 28 28.3 28 1.5 1.5 2 2 tbd 3 tbd tbd 3 3 4 4 4 4 3 3 5 5 6 6 8 8 8 8 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA tbd 1-c W-CDMA tbd tbd 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA (1) 3.2.12 Small Cell LDMOS Transistors Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) PL(AV) (W) Test signal BLP7G22-05 BLP8G27-5 BLP7G22-10 BLP8G27-10 BLF9G38-10G* BLM8G0710S-15PB BLM8G0710S-15PBG BLP9G0722-20 BLP9G0722-20G BLM8G1822-20B* BLM7G1822S-20PB BLM7G1822S-20PBG BLM9D2325-20AB* BLM9D2527-20AB BLM8D1822-25B* BLM9D2327-25B* BLM8G0710S-30PB BLM8G0710S-30PBG BLM7G1822S-40ABG BLM7G1822S-40PB BLM7G1822S-40AB BLM7G1822S-40PBG BLM8G0710S-45AB BLM8G0710S-45ABG BLP8G10S-45P BLP8G10S-45PG BLM8D1822S-50PBG BLM8D1822S-50PB BLC9G21LS-60AV* BLM8G0710S-60PB BLC8G27LS-60AV BLM7G1822S-80ABG SOT1179-2 SOT1371-1 SOT1179-2 SOT1371-1 SOT975C SOT1211-2 SOT1212-2 SOT1482-1 SOT1483-1 SOT1462-3 SOT1211-1 SOT1212-1 SOT1462-1 SOT1462-1 SOT1462-1 SOT1462-1 SOT1211-2 SOT1212-2 SOT1212-2 SOT1211-1 SOT1211-2 SOT1212-1 SOT1211-2 SOT1212-2 SOT1223-2 SOT1224-2 SOT1212-2 SOT1211-2 SOT1275-3 SOT1211-2 SOT1275-3 SOT1212-1 700 700 700 700 3400 700 700 400 400 1800 1805 1805 2300 2500 1800 2300 700 700 1805 1805 1805 1805 700 700 700 700 1805 1805 1800 700 2300 1805 2700 2700 2700 2700 3800 1000 1000 2700 2700 2200 2170 2170 2500 2700 2200 2700 1000 1000 2170 2170 2170 2170 1000 1000 1000 1000 2170 2170 2025 1000 2690 2170 5 5 10 10 10 15 (1) 15 (1) 20 20 20 (1) 20 (1) 20 (1) 20 (1) 20 (1) 25 (1) 25 (1) 30 (1) 30 (1) 40 (1) 40 (1) 40 (1) 40 (1) 45 (1) 45 (1) 45 45 50 (1) 50 (1) 60 (1) 60 (1) 60 (1) 80 (1) 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 23 19 25 22 tbd 27 27 21 21 tbd 23 23 tbd 43 tbd tbd 24 24 25.5 25 25.5 25 23.4 23.4 19.8 19.8 37 37 tbd 23.4 44 24 16 19 17.4 17 tbd 36 36 19 19 tbd 32.3 32.3 tbd 28 tbd tbd 35.7 35.7 31.3 31.5 31.3 31 35.6 35.6 20.8 20.8 26.5 26.5 tbd 35.6 15 28.3 1 0.3 2 2 tbd 1.5 1.5 35 35 tbd 2 2 tbd 3 tbd tbd 3 3 4 4 4 4 6 6 2.5 2.5 5 5 tbd 6 7 8 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA tbd 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA tbd 1-c W-CDMA 1-c W-CDMA tbd 1-c W-CDMA tbd tbd 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 2-c W-CDMA 2-c W-CDMA 1-c W-CDMA 1-c W-CDMA tbd 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA P3dB * Check status in section 3.1, as this type is not yet released for mass production (1) 56 24/7 RF - Version 2 - 2017 3.2.12 Small Cell LDMOS Transistors (continued) Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) PL(AV) (W) Test signal BLM7G1822S-80PBG BLM7G1822S-80AB BLM7G1822S-80PB BLF9G38LS-90P BLC8G27LS-100AV SOT1212-2 SOT1211-1 SOT1211-2 SOT1121B SOT1275-1 1805 1805 1805 3400 2496 2170 2170 2170 3600 2690 80 80 80 90 100 (1) 28 28 28 28 28 24 24 24 28 44 28 28.3 28 15 15.5 8 8 8 20 17.8 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 1-c W-CDMA 3.2.13 MIMO LDMOS Transistors Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) PL(AV) (W) Test signal BLP7G22-05 BLP8G27-5 BLP7G22-10 BLP8G27-10 BLM9D2325-20AB* BLM9D2527-20AB BLM8D1822-25B* BLM9D2327-25B* BLM9D18-25AB* BLM8D1822S-50PB BLM8D1822S-50PBG SOT1179-2 SOT1371-1 SOT1179-2 SOT1371-1 SOT1462-1 SOT1462-1 SOT1462-1 SOT1462-1 SOT1462-1 SOT1211-2 SOT1212-2 700 700 700 700 2300 2500 1800 2300 1800 1805 1805 2700 2700 2700 2700 2500 2700 2200 2700 1880 2170 2170 5 5 10 10 20 (1) 20 (1) 25 (1) 25 (1) 25 (1) 50 (1) 50 (1) 28 28 28 28 28 28 28 28 28 28 28 23 19 25 22 tbd 43 tbd tbd tbd 37 37 16 19 17.4 17 tbd 28 tbd tbd tbd 26.5 26.5 1 0.3 2 2 tbd 3 tbd tbd tbd 5 5 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA 2-c W-CDMA tbd 1-c W-CDMA tbd tbd tbd 1-c W-CDMA 1-c W-CDMA Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) PL(AV) (W) Test signal BLP9H10S-30* BLC9H10XS-60P* BLF6H10LS-160 BLC9H10XS-300P* BLC9H10XS-350A* BLC9H10XS-400A* BLC9H10XS-400P* BLC9H10XS-600A* BLC9H10XS-800P* SOT1482 SOT1273-7 SOT467B SOT1273-7 SOT1273-7 SOT1273-7 SOT1273-7 SOT1250-1 SOT1252-7 700 700 729 700 600 700 700 700 700 1000 1000 960 1000 1000 1000 1000 1000 1000 30 60 (1) 160 300 (1) 350 (1) 400 (1) 400 (1) 600 (1) 800 (1) 50 50 50 50 50 50 50 50 50 tbd tbd 34 tbd tbd tbd tbd tbd tbd tbd tbd 20 tbd tbd tbd tbd tbd tbd tbd tbd 38 tbd tbd tbd tbd tbd tbd tbd tbd 2-c W-CDMA tbd tbd tbd tbd tbd tbd RF Product Portfolio 3.2.14 High Voltage LDMOS Transistors P3dB * Check status in section 3.1, as this type is not yet released for mass production (1) 24/7 RF - Version 2 - 2017 57 3.3 RF Power Transistors for Broadcast RF power transistor selection guide on www.ampleon.com/products/broadcast Easy-to-use parametric filters help you choose the right RF power transistor for your design Device Naming Conventions for Broadcast B L P 05 H 6 L S 350 P Push-pull device P1dB power Option: earless package Flange material L = CPC, X =Cu LDMOS technology generation M: Medium voltage H: High voltage Operating frequency (in 100 MHz; here 0-500) F: Ceramic package C: Air-cavity plastic (ACP) package P: Overmolded plastic package (OMP) L: High-frequency power transistor B: Semiconductor die made of Si 3.3.1 UHF Broadcast LDMOS Transistors (470 - 860 MHz) Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) PL(AV) (W) BLP10H603 BLP10H605 BLP10H610 BLF571 BLF642 BLF871 BLF871S BLF881 BLF881S BLP15M7160P BLF882 BLF882S BLF884P BLF884PS BLF879P BLF879PS BLF888A BLF888AS BLF888D BLF888DS BLF888B BLF888BS BLF888E BLF888ES BLF898* BLF898S* SOT1352-1 SOT1352-1 SOT1352-1 SOT467C SOT467C SOT467C SOT467B SOT467C SOT467B SOT1223-2 SOT502A SOT502B SOT1121A SOT1121B SOT539A SOT539B SOT539A SOT539B SOT539A SOT539B SOT539A SOT539B SOT539A SOT539B SOT539A SOT539B 10 10 10 10 1 1 1 1 1 10 10 10 470 470 470 470 470 470 470 470 470 470 470 470 470 470 1400 1400 1400 500 1400 1000 1000 1000 1000 1500 860 860 860 860 860 860 860 860 806 806 860 860 790 790 800 800 2.5 5 10 20 35 100 100 140 140 160 200 200 350 350 500 500 600 600 600 600 650 650 750 750 900 900 50 50 50 50 32 40 40 50 50 28 50 50 50 50 42 42 50 50 50 50 50 50 50 50 50 50 62 59.6 60 70 63 60 60 49 49 59.7 63 63 46 46 47 47 31 31 40 40 33 33 52 52 28 28 22.8 22.4 22 27.5 19 21 21 21 21 19.4 20.6 20.6 21 21 21 21 20 20 17 17 21 21 17 17 18 18 24 24 33 33 * Check status in section 3.1, as this type is not yet released for mass production 58 24/7 RF - Version 2 - 2017 33 33 70 70 95 95 110 110 130 130 120 120 150 150 180 180 Test signal CW class-AB @ 860 MHz CW pulsed class-AB @ 860 MHz CW pulsed class-AB @ 860 MHz CW CW CW CW CW CW CW CW CW CW CW CW CW DVB-T (8k OFDM) DVB-T (8k OFDM) DVB-T (8k OFDM) DVB-T (8k OFDM) DVB-T (8k OFDM) DVB-T (8k OFDM) DVB-T (8k OFDM) DVB-T (8k OFDM) DVB-T (8k OFDM) DVB-T (8k OFDM) HF / VHF Broadcast LDMOS Transistors (0 - 500 MHz) Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) PL(AV) (W) Test signal BLP10H603 BLP10H605 BLP25M705 BLP35M805 BLF640 BLP10H610 BLP25M710 BLP27M810 BLF571 BLF642 BLP05H635XR BLP05H635XRG BLF644P BLP05H675XR BLP05H675XRG BLF645 BLF871 BLF871S BLP05H6110XR BLP05H6110XRG BLF881 BLF881S BLP05H6150XR BLP05H6150XRG BLF647P BLF647PS BLF882 BLF882S BLF182XR BLF182XRS BLP05H6250XR BLP05H6250XRG BLF573 BLF573S BLF183XR BLF183XRS BLP05H6350XR BLP05H6350XRG BLF174XR BLF174XRS BLF574 BLF574XR BLF574XRS BLF184XR BLF184XRG BLF184XRS BLP05H6700XR BLP05H6700XRG BLF178P BLF578 BLF178XR BLF178XRS BLF188XR BLF188XRG BLF188XRS BLF578XR BLF578XRS BLF189XRA* BLF189XRAS* BLF189XRB* BLF189XRBS* SOT1352-1 SOT1352-1 SOT1179-2 SOT1371-1 SOT538A SOT1352-1 SOT1179-2 SOT1371-1 SOT467C SOT467C SOT1223-2 SOT1224-2 SOT1228A SOT1223-2 SOT1224-2 SOT540A SOT467C SOT467B SOT1223-2 SOT1224-2 SOT467C SOT467B SOT1223-2 SOT1224-2 SOT1121A SOT1121B SOT502A SOT502B SOT1121A SOT1121B SOT1223-2 SOT1224-2 SOT502A SOT502B SOT1121A SOT1121B SOT1223-2 SOT1224-2 SOT1214A SOT1214B SOT539A SOT1214A SOT1214B SOT1214A SOT1214C SOT1214B SOT1138-2 SOT1204-2 SOT539A SOT539A SOT539A SOT539B SOT539A SOT1248C SOT539B SOT539A SOT539B SOT539A SOT539B SOT539A SOT539B 10 10 10 10 10 10 10 10 10 1 10 10 10 10 10 1 1 1 10 10 1 1 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 1 1 1 1 1400 1400 2500 3500 2200 1400 2500 2700 500 1400 600 600 1300 600 600 1400 1000 1000 600 600 1000 1000 600 600 1500 1500 860 860 600 600 600 600 500 500 600 600 600 600 128 128 500 500 500 600 600 600 600 600 128 500 128 128 600 600 600 500 500 300 300 150 150 2.5 5 5 5 10 10 10 10 20 35 35 35 70 75 75 100 100 100 110 110 140 140 150 150 200 200 200 200 250 250 250 250 300 300 350 350 350 350 600 600 600 600 600 700 700 700 700 700 1200 1200 1400 1400 1400 1400 1400 1400 1400 1600 1600 1900 1900 50 50 28 32 28 50 28 32 50 32 50 50 32 50 50 32 40 40 50 50 50 50 50 50 32 32 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 62 59.6 50 50 31 60 64.5 50.6 70 63 75 75 66 75 75 56 60 60 75 75 49 49 75 75 70 70 63 63 75 75 75 75 70 70 75 75 75 75 73 73 70 74.7 74.7 73.5 73.5 73.5 75 75 75 75 72 72 73 73 73 69 69 tbd tbd tbd tbd 22.8 22.4 16.4 20 19.3 22 16.2 18.4 27.5 19 27 27 23.5 27 27 18 21 21 27 27 21 21 27 27 18 17.5 20.6 20.6 28 28 27 27 27.2 27.2 28 28 27.5 27.5 29 29 26.5 24 24 23.9 23.9 23.9 26 26 28.5 26 28 28 24.4 24.4 24.4 23.5 23.5 tbd tbd tbd tbd 2 24 24 33 33 33 33 tbd tbd tbd tbd CW class-AB @ 860 MHz CW pulsed class-AB @ 860 MHz CW class-AB @ 2450 MHz CW class-AB @ 2450 MHz 1-c W-CDMA CW pulsed class-AB @ 860 MHz CW pulsed class-AB @ 2450 MHz CW class-AB @ 2450 MHz CW CW Pulsed RF Pulsed RF CW pulsed, class-AB Pulsed RF Pulsed RF CW CW CW Pulsed RF Pulsed RF CW CW Pulsed RF Pulsed RF Pulsed RF Pulsed RF CW CW Pulsed RF Pulsed RF Pulsed RF Pulsed RF CW CW Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF CW Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF CW Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF CW CW Pulsed RF Pulsed RF * Check status in section 3.1, as this type is not yet released for mass production 24/7 RF - Version 2 - 2017 59 RF Product Portfolio 3.3.2 3.3.3 HF / VHF Broadcast LDMOS Transistors (0 - 1600 MHz) Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) PL(AV) (W) Test signal BLP10H603 BLP10H605 BLP25M705 BLP35M805 BLF640 BLP10H610 BLP25M710 BLP27M810 BLF571 BLP10H630P BLP10H630PG BLF642 BLP10H660P BLP10H660PG BLF644P BLP10H690P BLP10H690PG BLF645 BLF871 BLF871S BLP10H6120P BLP10H6120PG BLF10M6135 BLF10M6LS135 BLF881 BLF881S BLF10M6160 BLF10M6LS160 BLP15M7160P BLF10M6200 BLF10M6LS200 BLF2324M8LS200P BLF647P BLF647PS BLF6G13L-250P BLF6G13LS-250P BLF6G13LS-250PG BLF6G15L-500H BLF6G15LS-500H BLF10H6600P BLF10H6600PS SOT1352-1 SOT1352-1 SOT1179-2 SOT1371-1 SOT538A SOT1352-1 SOT1179-2 SOT1371-1 SOT467C SOT1223-2 SOT1224-2 SOT467C SOT1223-2 SOT1224-2 SOT1228A SOT1223-2 SOT1224-2 SOT540A SOT467C SOT467B SOT1223-2 SOT1224-2 SOT502A SOT502B SOT467C SOT467B SOT502A SOT502B SOT1223-2 SOT502A SOT502B SOT539B SOT1121A SOT1121B SOT1121A SOT1121B SOT1121E SOT539A SOT539B SOT539A SOT539B 10 10 10 10 10 10 10 10 10 10 10 1 10 10 10 10 10 1 1 1 10 10 700 700 1 1 700 700 10 700 700 2300 10 10 1300 1300 1300 1400 1400 400 400 1400 1400 2500 3500 2200 1400 2500 2700 500 1000 1000 1400 1000 1000 1300 1000 1000 1400 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1500 1000 1000 2400 1500 1500 1300 1300 1300 1500 1500 1000 1000 2.5 5 5 5 10 10 10 10 20 30 30 35 60 60 70 90 90 100 100 100 120 120 135 135 140 140 160 160 160 200 200 200 200 200 250 250 250 500 500 600 600 50 50 28 32 28 50 28 32 50 50 50 32 50 50 32 50 50 32 40 40 50 50 28 28 50 50 32 32 28 28 28 28 32 32 50 50 50 50 50 50 50 62 59.6 50 50 31 60 64.5 50.6 70 72 72 63 72 72 66 72 72 56 60 60 72 72 28 28 49 49 27 27 59.7 28.5 28.5 32 70 70 56 56 56 19 19 46 46 22.8 22.4 16.4 20 19.3 22 16.2 18.4 27.5 18 18 19 18 18 23.5 18 18 18 21 21 18 18 21 21 21 21 22.5 22.5 19.4 20 20 17.2 18 17.5 17 17 17 16 16 20.8 20.8 2 24 24 26.5 26.5 33 33 32 32 40 40 60 65 65 - CW class-AB @ 860 MHz CW pulsed class-AB @ 860 MHz CW class-AB @ 2450 MHz CW class-AB @ 2450 MHz 1-c W-CDMA CW pulsed class-AB @ 860 MHz CW pulsed class-AB @ 2450 MHz CW class-AB @ 2450 MHz CW Pulsed RF Pulsed RF CW Pulsed RF Pulsed RF CW pulsed, class-AB Pulsed RF Pulsed RF CW CW CW Pulsed RF Pulsed RF 2-c W-CDMA 2-c W-CDMA CW CW 2-c W-CDMA 2-c W-CDMA CW 2-c W-CDMA 2-c W-CDMA 1-c W-CDMA Pulsed RF Pulsed RF CW CW CW DVB-T (8k OFDM) DVB-T (8k OFDM) 2-Tone, class-AB 2-Tone, class-AB 60 24/7 RF - Version 2 - 2017 3.4 RF Power Transistors for ISM (Industrial, Scientific and Medical) RF power transistor selection guide on www.ampleon.com/products/ism Easy-to-use parametric filters help you choose the right RF power transistor for your design Device Naming Conventions for ISM B L P 05 H 6 L S 350 XR Extremely Rugged P1dB power Option: earless package RF Product Portfolio Flange material L = CPC, X =Cu LDMOS technology generation M: Medium voltage H: High voltage Operating frequency (in 100 MHz; here 0-500) F: Ceramic package C: Air-cavity plastic (ACP) package P: Overmolded plastic package (OMP) L: High-frequency power transistor B: Semiconductor die made of Si 3.4.1 ISM LDMOS Transistors (0 - 500 MHz / XR) Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) Test signal BLP10H603 BLP10H605 BLP10H610 BLF571 BLP05H635XR BLP05H635XRG BLP05H675XR BLP05H675XRG BLP05H6110XR BLP05H6110XRG BLP05H6150XR BLP05H6150XRG BLF182XR BLF182XRS BLP05H6250XR BLP05H6250XRG BLF573 BLF573S BLF183XR BLF183XRS BLP05H6350XR BLP05H6350XRG BLF174XR BLF174XRS BLF574 BLF574XR BLF574XRS SOT1352-1 SOT1352-1 SOT1352-1 SOT467C SOT1223-2 SOT1224-2 SOT1223-2 SOT1224-2 SOT1223-2 SOT1224-2 SOT1223-2 SOT1224-2 SOT1121A SOT1121B SOT1223-2 SOT1224-2 SOT502A SOT502B SOT1121A SOT1121B SOT1223-2 SOT1224-2 SOT1214A SOT1214B SOT539A SOT1214A SOT1214B 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 1400 1400 1400 500 600 600 600 600 600 600 600 600 600 600 600 600 500 500 600 600 600 600 128 128 500 500 500 2.5 5 10 20 35 35 75 75 110 110 150 150 250 250 250 250 300 300 350 350 350 350 600 600 600 600 600 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 62 59.6 60 70 75 75 75 75 75 75 75 75 75 75 75 75 70 70 75 75 75 75 73 73 70 74.7 74.7 22.8 22.4 22 27.5 27 27 27 27 27 27 27 27 28 28 27 27 27.2 27.2 28 28 27.5 27.5 29 29 26.5 24 24 CW class-AB @ 860 MHz CW pulsed class-AB @ 860 MHz CW pulsed class-AB @ 860 MHz CW Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF CW CW Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF CW Pulsed RF Pulsed RF 24/7 RF - Version 2 - 2017 61 3.4.1 ISM LDMOS Transistors (0 - 500 MHz / XR) (continued) Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) Test signal BLF184XR BLF184XRG BLF184XRS BLP05H6700XR BLP05H6700XRG BLF178P BLF578 BLF178XR BLF178XRS BLF188XR BLF188XRG BLF188XRS BLF578XR BLF578XRS BLF189XRA* BLF189XRAS* BLF189XRB* BLF189XRBS* SOT1214A SOT1214C SOT1214B SOT1138-2 SOT1204-2 SOT539A SOT539A SOT539A SOT539B SOT539A SOT1248C SOT539B SOT539A SOT539B SOT539A SOT539B SOT539A SOT539B 10 10 10 10 10 10 10 10 10 10 10 10 10 10 1 1 1 1 600 600 600 600 600 128 500 128 128 600 600 600 500 500 300 300 150 150 700 700 700 700 700 1200 1200 1400 1400 1400 1400 1400 1400 1400 1600 1600 1900 1900 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 73.5 73.5 73.5 75 75 75 75 72 72 73 73 73 69 69 tbd tbd tbd tbd 23.9 23.9 23.9 26 26 28.5 26 28 28 24.4 24.4 24.4 23.5 23.5 tbd tbd tbd tbd Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF CW Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF CW CW Pulsed RF Pulsed RF 3.4.2 ISM LDMOS Transistors (0 - 1600 MHz) Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) PL(AV) (W) Test signal BLP10H603 BLP10H605 BLP25M705 BLP35M805 BLF640 BLP10H610 BLP25M710 BLP27M810 BLP10H630P BLP10H630PG BLF642 BLP10H660P BLP10H660PG BLF644P BLP10H690P BLP10H690PG BLF645 BLP10H6120P BLP10H6120PG BLP15M7160P BLF1721M8LS200 BLF2324M8LS200P BLF647P BLF647PS BLF6G13L-250P BLF6G13LS-250P BLF6G15L-500H BLF6G15LS-500H BLF10H6600P BLF10H6600PS SOT1352-1 SOT1352-1 SOT1179-2 SOT1371-1 SOT538A SOT1352-1 SOT1179-2 SOT1371-1 SOT1223-2 SOT1224-2 SOT467C SOT1223-2 SOT1224-2 SOT1228A SOT1223-2 SOT1224-2 SOT540A SOT1223-2 SOT1224-2 SOT1223-2 SOT502B SOT539B SOT1121A SOT1121B SOT1121A SOT1121B SOT539A SOT539B SOT539A SOT539B 10 10 10 10 10 10 10 10 10 10 1 10 10 10 10 10 1 10 10 10 1700 2300 10 10 1300 1300 1400 1400 400 400 1400 1400 2500 3500 2200 1400 2500 2700 1000 1000 1400 1000 1000 1300 1000 1000 1400 1000 1000 1500 2100 2400 1500 1500 1300 1300 1500 1500 1000 1000 2.5 5 5 5 10 10 10 10 30 30 35 60 60 70 90 90 100 120 120 160 200 200 200 200 250 250 500 500 600 600 50 50 28 32 28 50 28 32 50 50 32 50 50 32 50 50 32 50 50 28 28 28 32 32 50 50 50 50 50 50 62 59.6 50 50 31 60 64.5 50.6 72 72 63 72 72 66 72 72 56 72 72 59.7 28.5 32 70 70 56 56 19 19 46 46 22.8 22.4 16.4 20 19.3 22 16.2 18.4 18 18 19 18 18 23.5 18 18 18 18 18 19.4 19 17.2 18 17.5 17 17 16 16 20.8 20.8 2 55 60 65 65 - CW class-AB @ 860 MHz CW pulsed class-AB @ 860 MHz CW class-AB @ 2450 MHz CW class-AB @ 2450 MHz 1-c W-CDMA CW pulsed class-AB @ 860 MHz CW pulsed class-AB @ 2450 MHz CW class-AB @ 2450 MHz Pulsed RF Pulsed RF CW Pulsed RF Pulsed RF CW pulsed, class-AB Pulsed RF Pulsed RF CW Pulsed RF Pulsed RF CW 2-c W-CDMA 1-c W-CDMA Pulsed RF Pulsed RF CW CW DVB-T (8k OFDM) DVB-T (8k OFDM) 2-Tone, class-AB 2-Tone, class-AB * Check status in section 3.1, as this type is not yet released for mass production 62 24/7 RF - Version 2 - 2017 3.5 RF Power Transistors for RF Energy RF power transistor selection guide on www.ampleon.com/products/rf-energy Easy-to-use parametric filters help you choose the right RF power transistor for your design Device Naming Conventions for RF Energy B L C 2425 M 8 L S 300 P Push-pull device P1dB power Option: earless package Flange material L = CPC, X =Cu LDMOS technology generation L: Low voltage M: Medium voltage operating frequency (in 100 MHz; maximum) H: High voltage 3.5.1 RF Product Portfolio Operating frequency (in 100 MHz; here 2400-2500) F: Ceramic package C: Air-cavity plastic (ACP) package P: Overmolded plastic package (OMP) L: High-frequency power transistor B: Semiconductor die made of Si RF Energy LDMOS Transistors (0 - 500 MHz) Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) PL(AV) (W) Test signal BLP05H635XR BLP05H635XRG BLP05H675XR BLP05H675XRG BLP05H6110XR BLP05H6110XRG BLF10M6135 BLP05H6150XRG BLC10M6XS200 BLP05M7200 BLP05H6250XR BLP05H6250XRG BLP05H6350XR BLP05H6350XRG BLP05H6700XR BLP05H6700XRG SOT1223-2 SOT1224-2 SOT1223-2 SOT1224-2 SOT1223-2 SOT1224-2 SOT502A SOT1224-2 SOT1270-1 SOT1138-2 SOT1223-2 SOT1224-2 SOT1223-2 SOT1224-2 SOT1138-2 SOT1204-2 10 10 10 10 10 10 700 10 425 425 10 10 10 10 10 10 600 600 600 600 600 600 1000 600 450 450 600 600 600 600 600 600 35 35 75 75 110 110 135 150 200 200 250 250 350 350 700 700 50 50 50 50 50 50 28 50 28 28 50 50 50 50 50 50 75 75 75 75 75 75 28 75 80 77 75 75 75 75 75 75 27 27 27 27 27 27 21 27 21 21 27 27 27.5 27.5 26 26 26.5 - Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF 2-c W-CDMA Pulsed RF CW CW Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF 24/7 RF - Version 2 - 2017 63 3.5.2 RF Energy LDMOS Transistors (915 MHz) Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) PL(AV) (W) Test signal BLP10H603 BLP10H605 BLP10H610 BLP10H630P BLP10H630PG BLP10H660P BLP10H660PG BLP10H690P BLP10H690PG BLP10H6120P BLP10H6120PG BLF0910H6L500 BLF0910H6LS500 BLF10H6600P BLF10H6600PS SOT1352-1 SOT1352-1 SOT1352-1 SOT1223-2 SOT1224-2 SOT1223-2 SOT1224-2 SOT1223-2 SOT1224-2 SOT1223-2 SOT1224-2 SOT502A SOT502B SOT539A SOT539B 10 10 10 10 10 10 10 10 10 10 10 900 900 400 400 1400 1400 1400 1000 1000 1000 1000 1000 1000 1000 1000 930 930 1000 1000 2.5 5 10 30 30 60 60 90 90 120 120 500 500 600 600 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 62 59.6 60 72 72 72 72 72 72 72 72 61 61 46 46 22.8 22.4 22 18 18 18 18 18 18 18 18 18 18 20.8 20.8 - CW class-AB @ 860 MHz CW pulsed class-AB @ 860 MHz CW pulsed class-AB @ 860 MHz Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF CW CW 2-Tone, class-AB 2-Tone, class-AB 3.5.3 RF Energy LDMOS Transistors (2.45 GHz) Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) PL(AV) (W) Test signal BLP35M805 BLP27M810 BLF2425M9L30 BLF2425M9LS30 BLM2425M7S60P BLF2425M8L140 BLF2425M9LS140 BLC2425M9LS250 BLF2425M7LS250P BLF2425M7L250P BLC2425M8LS300P BLC2425M9LS700PV* SOT1371-1 SOT1371-1 SOT1135A SOT1135B SOT1211-1 SOT502A SOT502B SOT1270-1 SOT539B SOT539A SOT1250-1 SOT1258-1 10 10 2400 2400 2400 2400 2400 2400 2400 2400 2400 2400 3500 2700 2500 2500 2500 2500 2500 2500 2500 2500 2500 2500 5 10 30 30 60 140 140 250 250 250 300 1200 (1) 32 32 32 32 32 28 28 32 28 28 32 32 50 50.6 61 61 45 56 58 61 51 51 58 50 20 18.4 18.5 18.5 27.5 19 19 18.5 15 15 17.5 12.5 30 30 60 140 140 250 250 250 300 - CW class-AB @ 2450 MHz CW class-AB @ 2450 MHz CW CW CW class-AB @ 2450 MHz CW CW CW CW CW CW Pulsed CW P3dB pulsed. ∂ ≤ 10% * Check status in section 3.1, as this type is not yet released for mass production (1) 64 24/7 RF - Version 2 - 2017 3.6 RF Power Transistors for Aerospace & Defense RF power transistor selection guide on www.ampleon.com/products/aerospace-and-defense Easy-to-use parametric filters help you choose the right RF power transistor for your design Device Naming Conventions for Aerospace & Defense -120 G Option: gullwing shaped leads P: Push-pull device R: Enhanced ruggedness P1dB power S: Earless package P: Pallet Flange material L = CPC Frequency band (in 100 MHz; here: 2700-3100) G: Standard LDMOS ( 28 V) H: High voltage LDMOS (50 V) LDMOS technology generation A: Avionics frequency band operation L: L-Band frequency operation S: S-Band frequency operation L: High frequency power transistor B: Semiconductor die made of Si 3.6.1 6 G 2731 L S RF Product Portfolio B L S Avionics LDMOS Transistors Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) Test signal BLL6H0514-25 BLA6G1011L-200RG BLA6G1011LS-200RG BLA6G1011-200R BLA8G1011LS-300 BLA8G1011L-300 BLA8G1011L-300G BLA8G1011LS-300G BLA9G1011L-300* BLA9G1011L-300G* BLA9G1011LS-300G* BLA9G1011LS-300 BLA8H0910L-500 BLA8H0910LS-500 BLA6H0912-500 BLA6H1011-600 BLU6H0410L-600P BLU6H0410LS-600P BLF988 BLF988S BLA6H0912L-1000 BLA6H0912LS-1000 SOT467C SOT502D SOT502C SOT502A SOT502B SOT502A SOT502F SOT502E SOT502A SOT502F SOT502E SOT502B SOT502A SOT502B SOT634A SOT539A SOT539A SOT539B SOT539A SOT539B SOT539A SOT539B 500 1030 1030 1030 1030 1030 1030 1030 1030 1030 1030 1030 900 900 960 1030 400 400 500 500 960 960 1400 1090 1090 1090 1090 1090 1090 1090 1090 1090 1090 1090 930 930 1215 1090 900 900 1000 1000 1215 1215 25 200 200 200 300 300 300 300 300 300 300 300 500 500 500 600 600 600 600 600 1000 1000 50 28 28 28 32 32 32 32 32 32 32 32 50 50 50 48 50 50 50 50 50 50 50 65 65 65 56 56 56 56 57 57 57 57 62.5 62.5 50 52 58 58 58 58 51 51 19 20 20 20 16.5 16.5 16.5 16.5 20.5 20.5 20.5 20.5 19.5 19.5 17 17 20 20 19.8 19.8 15.5 15.5 Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF CW pulsed CW pulsed Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed, class-AB Pulsed, class-AB Pulsed RF Pulsed RF * Check status in section 3.1, as this type is not yet released for mass production 24/7 RF - Version 2 - 2017 65 3.6.2 L-Band LDMOS Transistors Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) Test signal BLL8H0514-25 BLL6H0514-25 BLL6H0514L-130 BLL6H0514LS-130 BLL8H0514L-130 BLL8H0514LS-130 BLL6H1214LS-250 BLL8H1214LS-250 BLL6G1214L-250 BLL6H1214L-250 BLL6H1214P2S-250 BLL8H1214L-250 BLL6H1214-500 BLL8H1214L-500 BLL6H1214LS-500 BLL8H1214LS-500 BLL9G1214L-600* BLL9G1214LS-600* SOT467C SOT467C SOT1135A SOT1135B SOT1135A SOT1135B SOT502B SOT502B SOT502A SOT502A SOM039 SOT502A SOT539A SOT539A SOT539B SOT539B SOT502A SOT502B 500 500 500 500 500 500 1200 1200 1200 1200 1.2 1200 1200 1200 1200 1200 1200 1200 1400 1400 1400 1400 1400 1400 1400 1400 1400 1400 1.4 1400 1400 1400 1400 1400 1400 1400 25 25 130 130 130 130 250 250 250 250 250 250 500 500 500 500 600 600 50 50 50 50 50 50 50 50 36 50 45 50 50 50 50 50 32 32 59 50 50 50 50 50 55 55 45 55 48 55 50 50 50 50 60 60 21 19 17 17 17 17 17 17 15 17 27 17 17 17 17 17 19 19 Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF 3.6.3 S-Band LDMOS Transistors Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) Test signal BLS6G2731-6G BLS6G3135-20 BLS6G3135S-20 BLS6G2735L-30 BLS6G2735LS-30 BLS9G2735L-50* BLS9G2735LS-50* BLS7G2325L-105 BLS6G3135-120 BLS6G2731-120 BLS6G2731S-120 BLS6G3135S-120 BLS6G2731S-130 BLS6G2933S-130 BLS7G2933S-150 BLS7G2730L-200P BLS7G2730LS-200P BLS7G3135LS-200 BLS9G2729L-350 BLS9G2729LS-350 BLS7G2729L-350P BLS7G3135L-350P BLS7G3135LS-350P BLS7G2729LS-350P BLS8G2731L-400P BLS8G2731LS-400P BLS9G2731L-400 BLS9G2731LS-400 BLS9G2934L-400 BLS9G2934LS-400 BLS9G3135L-400 BLS9G3135LS-400 SOT975C SOT608A SOT608B SOT1135A SOT1135B SOT1135A SOT1135B SOT502A SOT502A SOT502A SOT502B SOT502B SOT922-1 SOT922-1 SOT922-1 SOT539A SOT539B SOT502B SOT502A SOT502B SOT539A SOT539A SOT539B SOT539B SOT539A SOT539B SOT502A SOT502B SOT502A SOT502B SOT502A SOT502B 2700 3100 3100 2700 2700 2700 2700 2300 3100 2700 2700 3100 2700 2900 2900 2700 2700 3100 2700 2700 2700 3100 3100 2700 2700 2700 2700 2700 2900 2900 3100 3100 3100 3500 3500 3500 3500 3500 3500 2500 3500 3100 3100 3500 3100 3300 3300 3000 3000 3500 2900 2900 2900 3500 3500 2900 3100 3100 3100 3100 3400 3400 3500 3500 6 20 20 30 30 50 50 105 120 120 120 120 130 130 150 200 200 200 350 350 350 350 350 350 400 400 400 400 400 400 400 400 32 32 32 32 32 32 32 30 32 32 32 32 32 32 32 32 32 32 28 28 32 32 32 32 32 32 32 32 32 32 32 32 33 45 45 50 50 47 47 55 43 48 48 43 50 47 47 48 48 43 50 50 50 43 43 50 47 47 47 47 43 43 43 43 15 15.5 15.5 13 13 12 12 16.5 11 13.5 13.5 11 12 12.5 13.5 12 12 12 14 14 13 12 12 13 13 13 13 13 12 12 12 12 Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF @ 3.1 GHz Pulsed RF @ 3.1 GHz Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF * Check status in section 3.1, as this type is not yet released for mass production 66 24/7 RF - Version 2 - 2017 Sub-1 GHz LDMOS Transistors Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) Test signal BLP10H610 BLP10H630P BLP10H630PG BLP05H635XR BLP05H635XRG BLP10H660P BLP10H660PG BLP05H675XR BLP05H675XRG BLP10H6120P BLP10H6120PG BLF182XR BLF182XRS BLF183XR BLF183XRS BLF574XR BLF574XRS BLF184XRG BLP05H6700XR BLP05H6700XRG BLF184XR BLF184XRS BLF578 BLF578XR BLF578XRS SOT1352-1 SOT1223-2 SOT1224-2 SOT1223-2 SOT1224-2 SOT1223-2 SOT1224-2 SOT1223-2 SOT1224-2 SOT1223-2 SOT1224-2 SOT1121A SOT1121B SOT1121A SOT1121B SOT1214A SOT1214B SOT1214C SOT1138-2 SOT1204-2 SOT1214A SOT1214B SOT539A SOT539A SOT539B 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 1400 1000 1000 600 600 1000 1000 600 600 1000 1000 600 600 600 600 500 500 600 600 600 600 600 500 500 500 10 30 30 35 35 60 60 75 75 120 120 250 250 350 350 600 600 700 700 700 700 700 1200 1400 1400 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 72 72 75 75 72 72 75 75 72 72 75 75 75 75 74.7 74.7 73.5 75 75 73.5 73.5 75 69 69 22 18 18 27 27 18 18 27 27 18 18 28 28 28 28 24 24 23.9 26 26 23.9 23.9 26 23.5 23.5 CW pulsed class-AB @ 860 MHz Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF Pulsed RF CW Pulsed RF Pulsed RF 3.6.5 Pallets and Modules Type Pallet Size Weight Fmin (MHz) Fmax (MHz) Ppeak (W) VDS (V) ηD (%) Gp (dB) Test signal BLL6H1214P2S-250 BPS9G2934X-400* BPS9G2933X-450* BPS9G3135X-400* 5 x 12 cm 3.5 x 5.5 cm 3.5 x 5.5 cm 3.5 x 5.5 cm 80 85 85 85 1200 2900 2900 3100 1400 3400 3300 3500 250 400 450 450 45 32 32 32 48 43 45 44 27 12.5 13.5 12.5 Pulsed RF Pulsed RF Pulsed RF Pulsed RF * Check status in section 3.1, as this type is not yet released for mass production 24/7 RF - Version 2 - 2017 67 RF Product Portfolio 3.6.4 3.7 Gallium Nitride (GaN) RF Power Devices RF power transistor selection guide on www.ampleon.com/products/aerospace-and-defense/gan-devices Easy-to-use parametric filters help you choose the right RF power transistor for your design Device Naming Conventions for GaN Devices C L F 1G 0040 S 50 P P: Push-pull indicator, P = push-pull type; no P means single-ended transistor 2 to 1500:nominal P3dB in Watts: eg 50 = 50 W S earless type, S = earless; no S means eared package 35 to 60: Upper frequency, 10x GHz value: 35 = 3.5 GHz; 60 = 6.0 GHz 00 to 40: Lower frequency, 10x GHz value: 00 = 0 GHz or DC; 40 = 4.0 GHz 1G: Technology generation: 1G = 1st generation F: Package style: F = ceramic, P = overmolded plastic L: High-frequency power transistor C: Primary material identifier: C = wide band-gap compound materials, eg GaN 68 Type Package Fmin (MHz) Fmax (MHz) PL(1dB) (W) VDS (V) ηD (%) Gp (dB) Test signal CLF1G0060-10 CLF1G0060S-10 CLF1G0060-30 CLF1G0060S-30 CLF1G0035-50 CLF1G0035S-50 CLF1G0035-100P CLF1G0035S-100P CLF1G0035-100 CLF1G0035S-100 CLF1G0035-200P CLF1G0035S-200P SOT1227A SOT1227B SOT1227A SOT1227B SOT467C SOT467B SOT1228A SOT1228B SOT467C SOT467B SOT1228A SOT1228B 0 0 0 0 0 0 0 0 0 0 0 0 6000 6000 6000 6000 3500 3500 3500 3500 3500 3500 3500 3500 10 10 30 30 50 50 100 100 100 100 200 200 50 50 50 50 50 50 50 50 50 50 50 50 48.2 48.2 61 61 65 65 54.4 54.4 67.4 67.4 48 48 17.8 17.8 16.6 16.6 12 12 14.4 14.4 15.5 15.5 14 14 Pulsed RF @ 500 MHz Pulsed RF @ 500 MHz Pulsed RF @ 500 MHz Pulsed RF @ 500 MHz Pulsed RF @ 500 MHz Pulsed RF @ 500 MHz 1-Tone pulsed @ 2600 MHz 1-Tone pulsed @ 2600 MHz Pulsed RF @ 500 MHz Pulsed RF @ 500 MHz 1-Tone pulsed @ 2000 MHz 1-Tone pulsed @ 2000 MHz 24/7 RF - Version 2 - 2017 RF Product Portfolio 24/7 RF - Version 2 - 2017 69 70 24/7 RF - Version 2 - 2017 Supporting Best-Possible Application Results 4. Design Support Product Selection on Ampleon.com Every product has its own webpage on the Ampleon website. Pages can be accessed in several ways: by product tree, by application area or simply typing ' ' (e.g. "CLF1G0035S-200P") in the browser's search bar. Product Tree and Parametric Search Our online product tree (www.ampleon.com/products) categorizes the product by function. The parametric search tool allows you to refine the selection based on performance requirements. Design Support Application Area To find out what Ampleon offers in each application area, use www.ampleon.com/applications. Documentation Ampleon provides a complete library of technical and support documentation, from application notes and user guides to data sheets and simulation models. You can access this documentation from specific product pages and also search for it on www.ampleon.com/support/Documentation. Simulation Tools To help you evaluate our products for your specific application, Ampleon offers various simulation tools. For more information see section 4.1. Demonstration Boards and Samples Demonstration board and evaluation samples are available for all products to build and evaluate prototypes. To obtain a demonstration board or order small quantities of products, please contact your local Ampleon representative or authorized distributor (visit www.ampleon.com/about/distribution-partners). RF Power Lifetime Calculator The RF Power Lifetime Calculator enables an interactive estimation of our LDMOS device lifetime. Median-Time-to-Failure (MTF), the time that 50 % of the population has failed, is calculated as a function of junction temperature of the device, assuming electromigration as the wear-out failure mechanism. This allows RF design engineers to optimize thermal characteristics of their projects to generate an optimum system level solution. The online selection and calculation process will also eliminate the need to browse through large amounts of product information to quickly find a specific RF power transistor and its performance characteristics. The RF Power Lifetime Calculator is available on www.ampleon.com/support/rf-power-lifetime-calculator and is linked to product pages (where applicable). 24/7 RF - Version 2 - 2017 71 Product Longevity Ampleon product longevity program ensures a stable supply of products for your embedded designs. Participating products are available for a minimum of 10 years as of product launch and are supported by standard end-of-life notification policies. Updates are available in PDF format at: www.ampleon.com/documents/other-type/Ampleon_Longevity_Overview.pdf Additional Support For additional support please contact your local Ampleon sales representative or authorized distributor. You can also submit a question using the web form: www.ampleon.com/contact. 4.1 Simulation Models Updates of this overview are available in PDF format at: www.ampleon.com/dam/jcr:9c32341a-eb3e-4e4e-83f6-a257d8b73144/Ampleon_Model_Overview.pdf ADS model Microwave Office® Model Type ADS-2012 BLA0912-250 BLA6G1011-200R BLA6G1011L-200RG BLA6G1011LS-200RG BLA6H0912-500 BLA6H0912L-1000 BLA6H0912LS-1000 BLA6H1011-600 BLA8G1011L-300 BLA8G1011LS-300 BLA8H0910L-500 BLA8H0910LS-500 BLA9G1011L-300 BLA9G1011LS-300 BLC10G20LS-240PWT BLC10G22LS-240PVT BLC10M6XS200 BLC2425M8LS300P BLC2425M9LS250 BLC8G20LS-310AV BLC8G20LS-400AV BLC8G22LS-450AV BLC8G24LS-240AV BLC8G24LS-241AV BLC8G27LS-180AV BLC8G27LS-240AV BLC8G27LS-245AV BLC8G27LS-60AV BLC8G27LS-60AVH BLC9G15LS-400AVT BLC9G15XS-400AVT BLC9G20LS-120V BLC9G20LS-160PV BLC9G20LS-240PV BLC9G20LS-361AVT BLC9G20LS-470AVT BLC9G20XS-160AV BLC9G20XS-400AVT BLC9G22XS-400AVT 72 ADS-2015 ADS-2016 Library manual S-parameter data Simulation example 36V_150mA Available → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → 24/7 RF - Version 2 - 2017 → → → → → → Available Available Available Available Available Available Available Available → → → → → → → Available Available Available Available Available Available Available Available → → Available Available Available → → → → → → → → → → → → → → → → → → Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Simulation Models (continued) ADS model Microwave Office® Model Type BLC9G27LS-151AV BLD6G22L-50 BLD6G22LS-50 BLF0910H6L500 BLF0910H6LS500 BLF1043 BLF1046 BLF145 BLF147 BLF1721M8LS200 BLF174XR BLF174XRS BLF175 BLF177 BLF178XR BLF178XRS BLF182XR BLF182XRS BLF183XR BLF183XRS BLF184XR BLF184XRS BLF188XR BLF188XRS BLF202 BLF242 BLF2425M7L250P BLF2425M7LS250P BLF2425M9L30 BLF2425M9LS140 BLF2425M9LS30 BLF244 BLF245 BLF246 BLF248 BLF25M612 BLF25M612G BLF278 BLF346 BLF368 BLF3G21-30 BLF404 BLF521 BLF542 BLF544 BLF548 BLF571 BLF573 BLF573S BLF574 BLF574XR BLF574XRS BLF578 BLF578XR BLF578XRS BLF640 BLF642 BLF644P BLF645 ADS-2012 ADS-2015 ADS-2016 → → Available Library manual S-parameter data Simulation example Available Available → → → → Available Available 28V_50mA 28V_300mA 14V_250mA 14V_1000mA 28V_250mA 28V_1000mA 25V_150mA 25V_100mA 50V_150mA 50V_100mA 6.25V_20mA 14V_10mA 12.5V_20mA 28V_10mA 12.5V_25mA 12.5V_50mA 14V_50mA 14V_250mA 14V_25mA 14V_50mA 14V_100mA 28V_250mA Available → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → Available → Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Design Support 4.1 Available Available 28V_25mA 28V_50mA 28V_50mA 28V_100mA 28V_250mA 35V_250mA 28V_10mA 28V_50mA Available 25V_500mA 50V_500mA 14V_3000mA 28V_3000mA 14V_250mA 16V_250mA 26V_450mA 6.25V_50mA 12.5V_50mA 6.25V_10mA 12.5V_10mA 14V_10mA 14V_50mA 14V_40mA 28V_40mA 14V_160mA 28V_160mA → → → → → → → → → → → → → → → → → → → → → → Available Available Available Available Available Available Available Available Available Available Available → → Available Available Available 24/7 RF - Version 2 - 2017 73 4.1 Simulation Models (continued) ADS model Microwave Office® Model Type BLF647P BLF647PS BLF6G10-200RN BLF6G10LS-200RN BLF6G13L-250P BLF6G13LS-250P BLF6G22L-40P BLF6G22LS-40P BLF6G27L-40P BLF6G27LS-40P BLF6G38-100 BLF6G38-10G BLF6G38-50 BLF6G38LS-100 BLF6G38LS-50 BLF6H10L-160 BLF6H10LS-160 BLF7G20L-90P BLF7G20LS-90P BLF7G22L-130 BLF7G22LS-130 BLF7G24L-100 BLF7G24LS-100 BLF7G27L-140 BLF7G27LS-140 BLF871 BLF871S BLF881 BLF881S BLF884P BLF884PS BLF888A BLF888AS BLF888B BLF888BS BLF888D BLF888DS BLF888E BLF888ES BLF8G09LS-400PW BLF8G10LS-300P BLF8G19LS-170BV BLF8G20LS-140GV BLF8G20LS-160V BLF8G20LS-200V BLF8G20LS-400PGV BLF8G22LS-140 BLF8G22LS-160BV BLF8G22LS-205V BLF8G22LS-240 BLF8G24L-200P BLF8G24LS-100GV BLF8G24LS-150GV BLF8G24LS-200P BLF8G27LS-100GV BLF8G27LS-100P BLF8G27LS-140V BLF8G27LS-150GV BLF8G38LS-75V 74 ADS-2012 ADS-2015 ADS-2016 → → → → → → → → Available Available Available Available Library manual Simulation example Available Available Available Available Available Available → → → → → → → → → → → → → → Available Available Available Available Available Available Available → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available → → → → → → → → → → Available Available Available Available Available → → → → → → → → → → → → → → → → → → → → → → → → → → → → Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available 24/7 RF - Version 2 - 2017 Available S-parameter data Simulation Models (continued) ADS model Microwave Office® Model Type BLF988 BLF988S BLF9G38LS-90P BLL6H0514-25 BLL6H0514L-130 BLL6H0514LS-130 BLL6H1214-500 BLL6H1214L-250 BLL6H1214LS-250 BLL6H1214LS-500 BLL8H0514-25 BLL8H0514L-130 BLL8H0514LS-130 BLL8H1214L-250 BLL8H1214L-500 BLL8H1214LS-250 BLL8H1214LS-500 BLM7G1822S-20PB BLM7G1822S-20PBG BLM7G1822S-40PBG BLM8G0710S-30PB BLP05H6110XR BLP05H6150XR BLP05H6250XR BLP05H6350XR BLP05H635XR BLP05H6700XR BLP05H6700XRG BLP05H675XR BLP05M7200 BLP10H603 BLP10H605 BLP10H610 BLP10H6120P BLP10H660P BLP10H690P BLP15M7160P BLP27M810 BLP35M805 BLP7G07S-140P BLP7G22-05 BLP7G22-10 BLP8G10S-270PW BLP8G10S-45PG BLP8G20S-80P BLP8G21S-160PV BLP8G27-10 BLP8G27-5 BLS6G2735L-30 BLS6G2735LS-30 BLS6G3135-120 BLS6G3135-20 BLS6G3135S-120 BLS6G3135S-20 BLS7G2729L-350P BLS7G2729LS-350P BLS7G2730L-200P BLS7G2730LS-200P BLS8G2731L-400P ADS-2012 ADS-2015 ADS-2016 → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available → Available → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → → Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Library manual Simulation example S-parameter data Available Available Available Available Available Available Available Available Available Available Available Design Support 4.1 Available Available Available Available Available Available Available Available Available Available Available 24/7 RF - Version 2 - 2017 75 4.1 Simulation Models (continued) ADS model Microwave Office® Model Type BLS8G2731LS-400P BLS9G2729L-350 BLS9G2729LS-350 BLS9G2731L-400 BLS9G2731LS-400 BLS9G2735L-50 BLS9G2735LS-50 BLS9G2934L-400 BLS9G2934LS-400 BLS9G3135L-400 BLS9G3135LS-400 CLF1G0035-100 CLF1G0035-100P CLF1G0035-200P CLF1G0035-50 CLF1G0035S-100 CLF1G0035S-100P CLF1G0035S-200P CLF1G0035S-50 CLF1G0060-10 CLF1G0060-30 CLF1G0060S-10 CLF1G0060S-30 76 ADS-2012 ADS-2015 ADS-2016 → → → → → → → → → → → → Available → → → → → → → → → → → Available Available Available Available Available Available Available Available Available Available Available → → → → → → Available Available Available → → → → → → → → → → → → Available Available Available Available Available Available 24/7 RF - Version 2 - 2017 Library manual S-parameter data Simulation example Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available Available 50V_330mA 50V_340mA 50V_640mA 50V_150mA 50V_330mA 50V_340mA 50V_640mA 50V_150mA 50V_20mA 50V_50mA 50V_20mA 50V_50mA 5. Replacements Ampleon Discontinued Types versus Ampleon Replacement Types in Alphabetical Order by Discontinued Type Ampleon replacement type = same package Ampleon functional replacement type = same functional replacement in a different package Ampleon discontinued type Package Ampleon replacement type Ampleon functonal replacement type BLA0912-250 BLA0912-250R BLA1011-10 BLA1011-2 BLA1011-200 BLA1011-200R BLA1011-300 BLA1011S-200 BLA1011S-200R BLC8G24LS-240AV BLC8G27LS-245AV BLC9G27LS-150AV BLD6G21L-50 BLD6G21LS-50 BLD6G22L-50 BLD6G22LS-50 BLF1043 BLF1046 BLF145 BLF147 BLF175 BLF177 BLF1822-10 BLF2043 BLF2043F BLF2045 BLF242 BLF244 BLF245 BLF245B BLF246 BLF246B BLF248 BLF278 BLF278/01 BLF346 BLF368 BLF369 BLF3G21-30 BLF3G21-6 BLF3G22-30 BLF404 BLF521 BLF542 BLF544 BLF546 BLF548 BLF647 BLF6G10-135RN BLF6G10-160RN SOT502A SOT502A SOT467C SOT538A SOT502A SOT502A SOT957A SOT502B SOT502B SOT1252-1 SOT1251-2 SOT1275-1 SOT1130A SOT1130B SOT1130A SOT1130B SOT538A SOT467C SOT123A SOT121B SOT123A SOT121B SOT467C SOT538A SOT467C SOT467C SOT123A SOT123A SOT123A SOT279A SOT121B SOT161A SOT262A1 SOT262A1 SOT262A1 SOT119A SOT262A1 SOT800-2 SOT467C SOT538A SOT608A SOT409A SOT172D SOT171A SOT171A SOT268A SOT262A2 SOT540A SOT502A SOT502A BLC8G24LS-241AV BLC8G27LS-240AV BLC9G27LS-151AV BLF8G10L-160 BLA6H0912-500/BLA6H0912L-1000 BLA6H0912-500/BLA6H0912L-1000 BLL8H0514-25 BLL8H0514-25 BLA6G1011LS-200R BLA6G1011LS-200R BLA8G1011L-200 BLA6G1011LS-200R BLA6G1011LS-200R BLM8D1822S-50PBG BLM8D1822S-50PBG BLM8D1822S-50PBG BLM8D1822S-50PBG BLP27M810 BLF642 BLF642/BLP05H635XR BLP647P/BLP05H6150XR BLF182XR/BLP05H6150XR BLF182XR/BLP05H6150XR BLP8G27-10 BLP8G27-10 BLP27M810 Replacements BLP35M805 BLF640/BLF642 BLF642/BLP05H635XR BLF642/BLP05H635XR BLF645/BLF642 BLF645/BLF642 BLF183XR/BLP05H6350XR BLF183XR/BLP05H6350XR BLF183XR/BLP05H6350XR BLF642/BLP05H635XR BLF183XR/BLP05H6350XR BLF184XR/BLP05H6700XR BLF642/BLP27M810 BLP35M805 BLP10H603BLP10H605//BLP35M805 BLP10H603/BLP35M805 BLP35M805 BLF642/BLP05H635XR BLF645 BLF647P/BLP05H6150XR BLF647P/BLP05H6150XR/BLP10H6120P BLP8G10S-270PW - 24/7 RF - Version 2 - 2017 77 Ampleon Discontinued Types versus Ampleon Replacement Types in Alphabetical Order by Discontinued Type Ampleon replacement type = same package Ampleon functional replacement type = same functional replacement in a different package 78 Ampleon discontinued type Package BLF6G10-200RN BLF6G10-45 BLF6G10L-260PRN BLF6G10L-40BRN BLF6G10LS-135RN BLF6G10LS-160RN BLF6G10LS-260PRN BLF6G10S-45 BLF6G15L-250PBRN BLF6G15L-40BRN BLF6G15L-40RN BLF6G15LS-40RN BLF6G20-110 BLF6G20-180PN BLF6G20-180RN BLF6G20-230PRN BLF6G20-40 BLF6G20-75 BLF6G20LS-110 BLF6G20LS-140 BLF6G20LS-180RN BLF6G20LS-75 BLF6G20S-45 BLF6G22-180PN BLF6G22-180RN BLF6G22L-40BN BLF6G22L-40P BLF6G22LS-130 BLF6G22LS-180PN BLF6G22LS-180RN BLF6G22LS-40BN BLF6G22LS-75 BLF6G22S-45 BLF6G27-10 BLF6G27-45 BLF6G27L-40P BLF6G27LS-135 BLF6G27LS-50BN BLF6G27S-45 BLF6G38-100 BLF6G38-25 BLF6G38-50 BLF6G38LS-100 BLF6H10L-160 BLF7G10L-250 BLF7G15LS-200 BLF7G15LS-300P BLF7G20L-200 BLF7G20L-250P BLF7G20L-90P BLF7G20LS-140P SOT502A SOT608A SOT539A SOT1112A SOT502B SOT502B SOT539B SOT608B SOT1110A SOT1112A SOT1135A SOT1135B SOT502A SOT539A SOT502A SOT539A SOT608A SOT502A SOT502B SOT502B SOT502B SOT502B SOT608B SOT539A SOT502A SOT1112A SOT1121A SOT502B SOT539B SOT502B SOT1112B SOT502B SOT608B SOT975B SOT608A SOT1121A SOT502B SOT1112B SOT608B SOT502A SOT608A SOT502A SOT502B SOT467C SOT502A SOT502B SOT539B SOT502A SOT539A SOT1121A SOT1121B 24/7 RF - Version 2 - 2017 Ampleon replacement type Ampleon functonal replacement type - BLP8G10S-200P BLP8G10S-45P BLP8G10S-270PW BLP8G10S-45P BLF8G10LS-160 BLF8G10LS-160 BLP8G10S-270PW BLP8G10S-45P BLC9G15XS-400AVT BLM7G1822S-40PB BLM7G1822S-40PB BLM7G1822S-40PB BLC9G20LS-120V BLC9G20LS-160V BLC9G20LS-160V BLF8G20LS-230V BLM7G1822S-40PB BLM7G1822S-80PB BLC9G20LS-120V BLC9G20LS-160V BLC9G20LS-160V BLM7G1822S-40PB BLM7G1822S-80PB BLF8G22LS-220 BLF8G22LS-220 BLM7G1822S-40PB BLM7G1822S-40PB BLF8G22LS-140 BLF8G22LS-200V BLF8G22LS-220 BLM7G1822S-40PB BLM7G1822S-80PB BLM7G1822S-40PB BLP8G27-10 BLF6G27LS-40P BLF6G27LS-40P BLF6G27LS-40P BLF6G27LS-40P BLF9G38LS-90P BLF6G38S-25 BLF6G38LS-50 BLF9G38LS-90P BLF6H10LS-160 BLP8G10S-270PW BLC9G15LS-400AVT BLC9G15LS-400AVT BLF8G20LS-200V BLC10G20LS-240PV T BLM7G1822s-80PB BLC8G21LS-160AV BLF8G27LS-140 - Ampleon Discontinued Types versus Ampleon Replacement Types in Alphabetical Order by Discontinued Type Ampleon discontinued type Package Ampleon replacement type Ampleon functonal replacement type BLF7G21L-160P BLF7G21LS-160 BLF7G22L-130 BLF7G22L-160 BLF7G22L-200 BLF7G22L-250P BLF7G22LS-130 BLF7G22LS-160 BLF7G24L-100 BLF7G24L-140 BLF7G24L-160P BLF7G27L-100 BLF7G27L-140 BLF7G27L-150P BLF7G27L-200PB BLF7G27L-75P BLF7G27L-90P BLF7G27LS-150P BLF7G27LS-75P BLF7G27LS-90P BLF861A BLF872 BLF878 BLF888 BLF8G20LS-140GV BLF8G20LS-140V BLF8G20LS-200V BLF8G20LS-260A BLF8G22LS-160BV BLF8G24L-200P BLF8G24LS-200P BLF8G27LS-100P BLL1214-250 BLL1214-250R BLL1214-35 BLL6G1214LS-250 BLM6G10-30 BLM6G10-30G BLM6G22-30 BLM6G22-30G BLM7G22S-60PBG BLM7G24S-30BG BLS2731-110 BLS2731-20 BLS2731-50 BLS2933-100 BLW96/01 MX0912B251Y MX0912B351Y MZ0912B100Y MZ0912B50Y SOT1121A SOT1121B SOT502A SOT502A SOT502A SOT539A SOT502B SOT502B SOT502A SOT502A SOT539A SOT502A SOT502A SOT539A SOT1110A SOT1121A SOT1121A SOT539B SOT1121B SOT1121B SOT540A SOT800-1 SOT979A SOT979A SOT1244C SOT1244B SOT1120B SOT539B SOT1120B SOT539A SOT539B SOT1121B SOT502A SOT502A SOT467C SOT502B SOT834-1 SOT822-1 SOT834-1 SOT822-1 SOT1212-1 SOT1212-1 SOT423A SOT445C SOT422A SOT502A SOT121B SOT439A SOT439A SOT443A SOT443A BLP8G21S-160PV - BLC8G21LS-160AV BLC9G20LS-160V BLF8G22LS-140 BLC9G22LS-160VT BLF8G22LS-205V BLC10G22LS-240PVT BLF8G22LS-140 BLC9G22LS-160VT BLF8G24LS-100 BLF8G24LS-140 BLC9G27LS-151AV BLF8G27LS-100 BLF8G27LS-140 BLC9G27LS-151AV BLC8G27LS-210PV BLC8G27LS-60AV BLC8G27LS-100AV BLC9G27LS-151AV BLC8G27LS-60AV BLC8G27LS-100AV BLF888A/BLF888B BLF888A/BLF888B BLF888A/BLF888B BLF888A/BLF888B BLF9G20LS-160V BLF9G20LS-160V BLFG20LS-230V BLC8G20LS-310AV BLC9G22LS-160VT BLC8G24LS-241AV BLC8G24LS-241AV BLC8G27LS-100AV BLL6G1214L-250 BLL6G1214L-250 BLL8H0514-25 BLL6G1214L-250 BLM8G0710S-30PB BLM8G0710S-30PB BLM7G1822S-40PB BLM7G1822S-40PBG BLM8D1822S-50PBG BLM9D2327-25B BLS6G2731-120 BLS6G2735L-30 BLS6G2735L-30 BLS6G2933S-130 BLF182XR/BLP05H6250XR BLL6G1214L-250 BLL6G1214L-250 BLL8H0514L-130 BLL8H0514-25 24/7 RF - Version 2 - 2017 Replacements Ampleon replacement type = same package Ampleon functional replacement type = same functional replacement in a different package 79 6. Packaging and Packing 6.1 Packaging Ampleon package overview: www.ampleon.com/packages Air-Cavity Ceramic (ACC) Packages (L x W x H (mm))* SOT467B SOT467C SOT502A SOT502B SOT502C SOT502D (9.7 x 5.8 x max 4.7 (mm)) (20.3 x 5.8 x max 4.7 (mm)) (34.0 x 9.8 x max 4.7 (mm)) (20.6 x 9.8 x max 4.7 (mm)) (20.6 x 9.8 x max 4.7 (mm)) (34.0 x 9.8 x max 4.7 (mm)) SOT502F SOT538A SOT539A SOT539B SOT540A SOT608A (34.0 x 9.8 x max 4.7 (mm)) (5.5 x 4.1 x max 2.4 (mm)) (41.2 x 10.2 x max 4.7 (mm)) (32.3 x 10.2 x max 4.7 (mm)) (34 x 9.8 x max 5.8 mm)) (20.3 x 10.2 x max 4.6 (mm)) SOT608B SOT634A SOT975B SOT975C SOT922-1 SOT1120B (10.2 x 10.2 x max 4.6 (mm)) (34 x 13.7 x max 4.8 (mm)) (7.1 x 6.9 x max 3.6 (mm)) (7.1 x 6.9 x max 3.6 ((mm)) (17.6 x 9.4 x max 4.2 (mm)) (20.6 x 9.8 x max 4.8 (mm)) SOT1121A SOT1121B SOT1121E SOT1135A SOT1135B SOT1214A (34.0 x 9.8 x max 4.7 (mm)) (20.6 x 9.8 x max 4.7 (mm)) (20.6 x 9.8 x max 4.7 (mm)) (20.3 x 9.8 x max 4.7 (mm)) (9.8 x 9.8 x max 4.7 (mm)) (34.0 x 9.8 x max 4.7 (mm)) SOT1214B SOT1214C SOT1227A SOT1227B SOT1228A SOT1228B (20.6 x 9.8 x max 4.7 (mm)) (34 x 9.8 x max 4.7 mm)) (14.0 x 4.1 x max 3.7 (mm)) (5.1 x 4.1 x max 3.7 (mm)) (29.0 x 5.8 x max 5.2 (mm)) (17.3 x 5.8 x max 5.2 (mm)) SOT1239B SOT1242B SOT1242C SOT1244B SOT1244C SOT1248C (20.6 x 9.8 x max 4.8 (mm)) (32.3 x 10.2 x max 5.5 (mm)) (32.3 x 10.2 x max 5.5 (mm)) (20.6 x 9.8 x max 4.8 (mm)) (20.6 x 9.8 x max 4.8 (mm)) (32.3 x 10.2 x max 5.5 (mm)) * Not drawn to scale 80 24/7 RF - Version 2 - 2017 Air-Cavity Plastic (ACP) Packages (L x W x H (mm))* SOT1250-1 SOT1251-3 SOT1252-7 SOT1258-1 SOT1258-3 SO1258-7 (32.2 x 10.1 x max 4.5 (mm)) (32.2 x 10.1 x max 4.5 (mm)) (32.2 x 10.1 x max 4.5 (mm)) (32.2 x 10.1 x max 4.5 (mm)) (34.0 x 9.8 x max. 4.7 (mm)) (34.0 x 9.8 x max. 4.7 (mm)) SOT1270-1 SOT1271-3 SOT1273-7 SOT1275-1 SOT1275-3 (20.6 x 9.8 x max 3.7 (mm)) (20.6 x 9.8 x max 3.7 (mm)) (20.6 x 9.8 x max 3.7 (mm)) (20.6 x 9.8 x max 3.7 (mm)) (20.6 x 9.8 x max 3.7 (mm)) SOT1138-2 SOT1179-2 SOT1204-2 SOT1211-1 SOT1211-2 SOT1212-1 (20.6 x 10 x max 3.9 mm)) (6 x 4 x max 1 (mm)) (20.6 x 10 x max 3.9 (mm)) (20.6 x 10 x max 3.9 (mm)) (20.6 x 10 x max 3.9 (mm)) (20.6 x 10 x max 3.9 (mm)) SOT212-2 SOT1221-2 SOT1223-2 SOT1224-2 SOT1352-1 SOT1371-1 (20.6 x 10 x max 3.9 (mm)) (20.6 x 10 x max 3.9 (mm)) (20.6 x 10 x max 3.9 (mm)) (20.6 x 10 x max 3.9 (mm)) (6 x 5 x max 1 (mm)) (6 x 4 x max 1 (mm)) SOT1462-1 SOT1462-3 SOT1482-1 SOT1483-1 (8 x 8 x max. 2.1 (mm)) (8 x 8 x max. 2.1 (mm)) (10.67 x 6.1 x max. 2.03 (mm)) (10.67 x 6.1 x max. 2.08 (mm)) Packaging and Packing Overmolded Plastic (OMP) Packages (L x W x H (mm))* * Not drawn to scale 24/7 RF - Version 2 - 2017 81 6.2 Packing Packing Quantities per Package with Relevant Ordering Codes 82 Package Package dimensions (mm) Packing quantity Product 12NC ending Packing method SOT467B 9.7 x 5.8 x 4.7 60 400 112 118 Blister, tray Tape and reel SOT467C 20.3 x 5.8 x 4.7 60 112 Blister, tray SOT502A 34.0 x 9.8 x 4.7 60 100 300 112 118 135 Blister, tray Tape and reel Reel SOT502B 20.6 x 9.8 x 4.7 60 100 112 118 Blister, tray Tape and reel SOT502C 20.6 x 9.8 x 4.7 60 112 Blister, tray SOT502D 34.0 x 9.8 x 4.7 60 112 Blister, tray SOT502E 20.6 x 9.8 x 4.7 60 112 Blister, tray SOT502F 34.0 x 9.8 x 4.7 60 112 Blister, tray SOT538A 5.5 x 4.1 x 2.4 160 500 112 135 Blister, tray Reel SOT539A 41.2 x 10.2 x 4.7 60 100 112 118 Blister, tray Tape and reel SOT539B 32.3 x 10.2 x 4.7 60 100 112 118 Blister, tray Tape and reel SOT540A 34.0 x 9.8 x 5.4 60 112 Blister, tray SOT608A 20.3 x 10.2 x 4.2 60 300 112 135 Blister, tray Reel SOT608B 10.2 x 10.16 x 4.2 60 100 300 112 118 135 Blister, tray Tape and reel Reel SOT634A 34.0 x 13.7 x 4.8 60 112 Blister, tray SOT922-1 17.6 x 9.4 x 3.9 60 112 Blister, tray SOT975B 7.1 x 6.9 x 3.6 100 180 118 112 Tape and reel Blister, tray SOT975C 7.1 x 6.9 x 3.6 100 180 118 112 Tape and reel Blister, tray SOT1110A 41.2 x 10.2 x 4.7 60 100 112 118 Blister, tray Tape and reel SOT1110B 32.3 x 10.2 x 5.5 60 100 112 118 Blister, tray Tape and reel SOT1112A 20.3 x 9.8 x 4.7 60 100 112 118 Blister, tray Tape and reel 24/7 RF - Version 2 - 2017 Package family Air-Cavity Ceramic (ACC) Packing Quantities per Package with Relevant Ordering Codes (continued) Package dimensions (mm) Packing quantity Product 12NC ending Packing method SOT1120B 20.6 x 9.8 x 4.8 60 100 180 112 118 134 Blister, tray Tape and reel Reel SOT1121A 34.0 x 9.8 x 4.7 60 100 112 118 Blister, tray Tape and reel SOT1121B 20.6 x 9.8 x 4.7 60 100 112 118 Blister,tray Tape and reel SOT1121E 20.6 x 9.8 x 4.7 100 118 Tape and reel SOT1135A 20.3 x 9.8 x 4.7 60 100 112 118 Blister, tray Tape and reel SOT1135B 9.8 x 9.8 x 4.7 60 100 112 118 Blister, tray Tape and reel SOT1214A 34.0 x 9.8 x 4.7 60 112 Blister, tray SOT1214B 20.6 x 9.8 x 4.7 60 112 Blister, tray SOT1214C 20.6 x 9.8 x 4.7 96 100 127 118 Tube Tape and reel SOT1227A 14.0 x 4.1 x 3.7 60 112 Blister, tray SOT1227B 5.1 x 4.1 x 3.7 60 112 Blister, tray SOT1228A 29.0 x 5.8 x 5.2 60 112 Blister, tray SOT1228B 17.3 x 5.8 x 5.2 60 112 Blister, tray SOT1239B 20.6 x 9.8 x 4.8 60 60 100 112 115 118 Blister, tray Tape and reel Tape and reel SOT1242B 32.3 x 10.2 x 5.5 60 100 112 118 Blister, tray Tape and reel SOT1242C 32.2 x 10.2 x 4.9 60 100 127 115 Tube Tape and reel SOT1244B 20.6 x 9.8 x 4.8 60 100 112 118 Blister, tray Tape and reel SOT1244C 20.6 x 9.8 x 4.8 96 100 127 118 Tube Tape and reel SOT1248C 32.3 x 10.2 x 5.5 100 118 Tape and reel SOT1250-1 32.3 x 10.1 x 4.5 60 100 112 118 Blister, tray Tape and reel SOT1251-2 32.3 x 10.1 x 4.5 60 100 517 518 Blister, tray Tape and reel SOT1251-3 32.3 x 10.1 x 4.5 60 100 517 518 Blister, tray Tape and reel Package family Air-Cavity Ceramic (ACC) Packaging and Packing Package Air-Cavity Plastic (ACP) 24/7 RF - Version 2 - 2017 83 Packing Quantities per Package with Relevant Ordering Codes (continued) Package dimensions (mm) Packing quantity Product 12NC ending Packing method SOT1252-1 32.3 x 10.1 x 4.5 60 60 100 100 112 517 118 518 Blister, tray Blister, tray Tape and reel Tape and reel SOT1258-3 32.2 x 10.1 x 4.5 60 100 517 518 Blister, tray Tape and reel Package 84 SOT1258-7 32.2 x 10.1 x 4.5 60 100 517 518 Blister, tray Tape and reel SOT1270-1 20.6 x 9.8 x 3.7 60 517 Blister, tray SOT1275-1 20.6 x 9.8 x 3.7 60 100 517 518 Blister, tray Tape and reel SOT822-1 15.9 x 11.0 x 3.5 100 180 500 118 127 135 Tape and reel Tube Reel SOT1138-2 20.6 x 10.0 x 3.9 100 118 Tape and reel SOT1179-2 6.0 x 4.0 x 1.0 500 515 Reel SOT1204-2 20.6 x 10.0 x 3.9 100 518 Tape and reel SOT1211-2 20.6 x 10.0 x 3.9 100 118 Tape and reel SOT1212-2 20.6 x 10.0 x 3.9 100 518 Tape and reel SOT1221-2 20.6 x 10 x 3.9 100 518 Tape and reel SOT1223-2 20.6 x 10.0 x 3.9 100 118 Tape and reel SOT1224-2 20.6 x 10.0 x 3.9 100 518 Tape and reel SOT1352-1 6.0 x 5.0 x 1.0 60 500 531 515 Tape and reel Reel 24/7 RF - Version 2 - 2017 Package family Air-Cavity Plastic (ACP) Overmolded Plastic (OMP) 6.3 Marking Codes Marking code Type Package B1025 B1025 B1050 B1050 B1000 B1000 B2550 B2500 B27810 B35805 B2250 B2200 B2700 B2750 BLP10H603 BLP10H603 BLP10H605 BLP10H605 BLP10H610 BLP10H610 BLP25M705 BLP25M710 BLP27M810 BLP35M805 BLP7G22-05 BLP7G22-10 BLP8G27-10 BLP8G27-5 SOT1352-1 SOT1352-1 SOT1352-1 SOT1352-1 SOT1352-1 SOT1352-1 SOT1179-2 SOT1179-2 SOT1371-1 SOT1371-1 SOT1179-2 SOT1179-2 SOT1371-1 SOT1371-1 Packaging and Packing In general, device marking includes the part number, some manufacturing information and the Ampleon's logo. If packages are too small for the full-length part number, a shorter, coded part number (called the "marking code") is used instead. To save space, the marking code is used in place of the manufacturing-site code. The full-length part number is always printed on the packing label on the box or bulk-pack in which the devices are supplied. 24/7 RF - Version 2 - 2017 85 7. Abbreviations Abbreviations A&D AC ACC ACP ASYM Bcst/ISM Broadband CDMA CW dB DC DEV EDGE FM Freq GaAs GaN Gen GHz GNSS HD HDTV HEMT HF HPA HVQFN IC ISM kW LDMOS LTE mA MHz MIMO MMIC MRI OMP PA PAD RF RFS RoHS SOT SYM TDMA TD-SCDMA UHF UWB V VDMOS VHF WCDMA WiFi WiMAX XR 86 Aerospace and Defense Alternating Current Air-Cavity Ceramic package Air-Cavity Plastic package ASYMmetrical design of Doherty (main and peak devices are different) Broadcast/Industrial, Scientific, Medical Broadband RF power GaN HEMT Code Division Multiple Access Continuous Wave decibel Direct Current Development Enhanced Data Rates for GSM Evolution Frequency Modulation Frequency Gallium Arsenide Gallium Nitride Generation GigaHertz Global Navigation Satellite System High-Definition High-Definition Television High-Electron Mobility Transistor High Frequency (3 - 30 MHz) High Power Amplifier Plastic Thermally Enhanced Very thin Quad Flat package with no leads Integrated Circuit Industrial, Scientific, and Medical (reserved frequency bands) kiloWatt Laterally Diffused Metal-Oxide-Semiconductor Long-Term Evolution milliamp MegaHertz Multiple-input and multiple-output, a method for multiplying the capacity of a radio link using multiple transmit and receive antennas to exploit multipath propagation Monolithic Microwave Integrated Circuit Magnetic Resonance Imaging Overmolded Plastic Power Amplifier Single-Package Asymmetric Doherty Radio Frequency Released For Supply Restriction of Hazardous Substances Small-Outline Transistor Symmetrical design of Doherty (main and peak devices are the same type of transistor) Time Division Multiple Access Time Division-Synchronous Code Division Multiple Access Ultra High Frequency (470 - 860 MHz) Ultra-Wideband Volt Vertical Double-diffused Metal Oxide Semiconductor Very High Frequency (30 - 300 MHz) Wideband Code Division Multiple Access Wireless Fidelity Worldwide interoperability for Microwave Access eXtremely Rugged 24/7 RF - Version 2 - 2017 8. Contact We share the passion for RF technology which is what we radiate to our customers, suppliers and partners. Whether we are initiating, discovering, developing, designing, marketing or supporting, our work is ultimately aimed at delivering our best and achieving outstanding results. While we strive for sharing information about our portfolio and our competence, you might still have questions or do need our support for your specific challenge. Contact Please feel free to contact our experts across the globe in a location closest to you (www.ampleon.com/about/worldwidelocations) by accessing our contact window (www.ampleon.com/contact) for topics related to sales inquiries, quality, application/simulation/modelling or other. 24/7 RF - Version 2 - 2017 87 9. Product Index Type Portfolio section Type Portfolio section Type Portfolio section Type Portfolio section BLA6G1011-200R BLA6G1011L-200RG BLA6G1011LS-200RG BLA6H0912-500 BLA6H0912L-1000 BLA6H0912LS-1000 BLA6H1011-600 BLA8G1011L-300 BLA8G1011L-300G BLA8G1011LS-300 BLA8G1011LS-300G BLA8H0910L-500 BLA8H0910LS-500 BLA9G1011L-300 BLA9G1011L-300G BLA9G1011LS-300 BLA9G1011LS-300G BLC10G18XS-320AVT BLC10G20LS-240PWT BLC10G22LS-240PVT BLC10M6XS200 BLC2425M8LS300P BLC2425M9LS250 BLC2425M9LS700PV BLC8G09XS-400AVT BLC8G20LS-310AV BLC8G20LS-400AV BLC8G21LS-160AV BLC8G22LS-450AV BLC8G24LS-241AV BLC8G27LS-100AV BLC8G27LS-140AV BLC8G27LS-160AV BLC8G27LS-180AV BLC8G27LS-210PV BLC8G27LS-240AV BLC8G27LS-60AV BLC9G15LS-400AVT BLC9G15XS-400AVT BLC9G20LS-120V BLC9G20LS-160PV BLC9G20LS-240PV BLC9G20LS-361AVT BLC9G20LS-470AVT BLC9G20XS-160AV BLC9G20XS-400AVT BLC9G20XS-550AVT BLC9G21LS-60AV BLC9G22LS-160VT BLC9G22XS-400AVT BLC9G24XS-170AV BLC9G27LS-151AV BLC9G27XS-380AVT BLC9H10XS-300P BLC9H10XS-350A BLC9H10XS-400A BLC9H10XS-400P BLC9H10XS-600A 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.2 3.2 3.2 3.5 3.5 3.5 3.5 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 BLC9H10XS-60P BLC9H10XS-800P BLF0910H6L500 BLF0910H6LS500 BLF10H6600P BLF10H6600PS BLF10M6135 BLF10M6160 BLF10M6200 BLF10M6LS135 BLF10M6LS160 BLF10M6LS200 BLF1721M8LS200 BLF174XR BLF174XRS BLF178P BLF178XR BLF178XRS BLF182XR BLF182XRS BLF183XR BLF183XRS BLF184XR BLF184XRG BLF184XRS BLF188XR BLF188XRG BLF188XRS BLF189XRA BLF189XRAS BLF189XRB BLF189XRBS BLF2324M8LS200P BLF2425M6L180P BLF2425M6LS180P BLF2425M7L100 BLF2425M7L140 BLF2425M7L250P BLF2425M7LS100 BLF2425M7LS140 BLF2425M7LS250P BLF2425M8L140 BLF2425M8LS140 BLF2425M9L30 BLF2425M9LS140 BLF2425M9LS30 BLF25M612 BLF25M612G BLF571 BLF573 BLF573S BLF574 BLF574XR BLF574XRS BLF578 BLF578XR BLF578XRS BLF640 3.2 3.2 3.5 3.5 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.4 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 BLF642 BLF644P BLF645 BLF647P BLF647PS BLF6G13L-250P BLF6G13LS-250P BLF6G13LS-250PG BLF6G15L-500H BLF6G15LS-500H BLF6G21-10G BLF6G27LS-40P BLF6G27LS-40PG BLF6G38LS-50 BLF6G38S-25 BLF7G10LS-250 BLF7G20LS-200 BLF7G20LS-250P BLF7G20LS-90P BLF7G22LS-200 BLF7G22LS-250P BLF7G24LS-100 BLF7G24LS-140 BLF7G27LS-100 BLF7G27LS-140 BLF871 BLF871S BLF879P BLF879PS BLF881 BLF881S BLF882 BLF882S BLF884P BLF884PS BLF888A BLF888AS BLF888B BLF888BS BLF888D BLF888DS BLF888E BLF888ES BLF898 BLF898S BLF8G09LS-270GW BLF8G09LS-270W BLF8G09LS-400PGW BLF8G09LS-400PW BLF8G10L-160 BLF8G10LS-160 BLF8G10LS-160V BLF8G10LS-270 BLF8G10LS-270GV BLF8G10LS-270V BLF8G10LS-300P BLF8G19LS-170BV BLF8G20LS-160V 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 BLF8G20LS-220 BLF8G20LS-230V BLF8G20LS-400PGV BLF8G20LS-400PV BLF8G22LS-140 BLF8G22LS-200GV BLF8G22LS-200V BLF8G22LS-205V BLF8G22LS-220 BLF8G22LS-240 BLF8G22LS-270 BLF8G22LS-270GV BLF8G22LS-270V BLF8G24LS-100GV BLF8G24LS-100V BLF8G24LS-150GV BLF8G24LS-150V BLF8G27LS-100 BLF8G27LS-100GV BLF8G27LS-100V BLF8G27LS-140 BLF8G27LS-140V BLF8G27LS-150GV BLF8G27LS-150V BLF8G38LS-75V BLF988 BLF988S BLF9G20LS-160V BLF9G38-10G BLF9G38LS-90P BLL6G1214L-250 BLL6H0514-25 BLL6H0514L-130 BLL6H0514LS-130 BLL6H1214-500 BLL6H1214L-250 BLL6H1214LS-250 BLL6H1214LS-500 BLL6H1214P2S-250 BLL8H0514-25 BLL8H0514L-130 BLL8H0514LS-130 BLL8H1214L-250 BLL8H1214L-500 BLL8H1214LS-250 BLL8H1214LS-500 BLL9G1214L-600 BLL9G1214LS-600 BLM2425M7S60P BLM7G1822S-20PB BLM7G1822S-20PBG BLM7G1822S-40AB BLM7G1822S-40ABG BLM7G1822S-40PB BLM7G1822S-40PBG BLM7G1822S-80AB BLM7G1822S-80ABG BLM7G1822S-80PB 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.6 3.6 3.2 3.2 3.2 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.5 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 88 24/7 RF - Version 2 - 2017 Portfolio section Type Portfolio section Type Portfolio section BLM7G1822S-80PBG BLM8D1822-25B BLM8D1822S-50PB BLM8D1822S-50PBG BLM8G0710S-15PB BLM8G0710S-15PBG BLM8G0710S-30PB BLM8G0710S-30PBG BLM8G0710S-45AB BLM8G0710S-45ABG BLM8G0710S-60PB BLM8G0710S-60PBG BLM8G1822-20B BLM9D2325-20AB BLM9D2327-25B BLM9D2527-20AB BLP05H6110XR BLP05H6110XRG BLP05H6150XR BLP05H6150XRG BLP05H6250XR BLP05H6250XRG BLP05H6350XR BLP05H6350XRG BLP05H635XR BLP05H635XRG BLP05H6700XR BLP05H6700XRG 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 BLP05H675XR BLP05H675XRG BLP05M7200 BLP10H603 BLP10H605 BLP10H610 BLP10H6120P BLP10H6120PG BLP10H630P BLP10H630PG BLP10H660P BLP10H660PG BLP10H690P BLP10H690PG BLP15M7160P BLP25M705 BLP25M710 BLP27M810 BLP35M805 BLP7G22-05 BLP7G22-10 BLP8G05S-200 BLP8G05S-200G BLP8G10S-270PW BLP8G10S-45P BLP8G10S-45PG BLP8G21S-160PV BLP8G27-10 3.3 3.3 3.5 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 BLP8G27-5 BLP9G0722-20 BLP9G0722-20G BLP9H10S-30 BLS6G2731-120 BLS6G2731-6G BLS6G2731S-120 BLS6G2731S-130 BLS6G2735L-30 BLS6G2735LS-30 BLS6G2933S-130 BLS6G3135-120 BLS6G3135-20 BLS6G3135S-120 BLS6G3135S-20 BLS7G2325L-105 BLS7G2729L-350P BLS7G2729LS-350P BLS7G2730L-200P BLS7G2730LS-200P BLS7G2933S-150 BLS7G3135L-350P BLS7G3135LS-200 BLS7G3135LS-350P BLS8G2731L-400P BLS8G2731LS-400P BLS9G2729L-350 BLS9G2729LS-350 3.2 3.2 3.2 3.2 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 Type Portfolio section BLS9G2731L-400 BLS9G2731LS-400 BLS9G2735L-50 BLS9G2735LS-50 BLS9G2934L-400 BLS9G2934LS-400 BLS9G3135L-400 BLS9G3135LS-400 BLU6H0410L-600P BLU6H0410LS-600P BPS9G2933X-450 BPS9G2934X-400 BPS9G3135X-400 CLF1G0035-100 CLF1G0035-100P CLF1G0035-200P CLF1G0035-50 CLF1G0035S-100 CLF1G0035S-100P CLF1G0035S-200P CLF1G0035S-50 CLF1G0060-10 CLF1G0060-30 CLF1G0060S-10 CLF1G0060S-30 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.6 3.7 3.7 3.7 3.7 3.7 3.7 3.7 3.7 3.7 3.7 3.7 3.7 Product Index Type 24/7 RF - Version 2 - 2017 89 Notes 90 24/7 RF - Version 2 - 2017 Notes 24/7 RF - Version 2 - 2017 91 © Ampleon Netherlands B.V. 2017 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. www.ampleon.com Date of release: May 2017 Document identifier: AMP 247 2017 0531 Printed in the Netherlands