BLL1214-250

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specification Supersedes data of 2002 Aug 06 2003 Aug 29 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 FEATURES PINNING - SOT502A • High power gain PIN DESCRIPTION • Easy power control 1 drain • Excellent ruggedness 2 gate • Source on mounting base eliminates DC isolators, reducing common mode inductance. 3 source, connected to flange APPLICATIONS • L-band radar applications in the 1200 to 1400 MHz frequency range. handbook, halfpage 1 DESCRIPTION 3 2 Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange. Top view MBK394 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION Pulsed class-AB; tp = 1 ms; δ = 10% f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) pulse droop (dB) tr (ns) tf (ns) 1200 to 1400 36 150 250 >12 >42