BLP10H660PGY

BLP10H660P; BLP10H660PG Power LDMOS transistor Rev. 1 — 20 December 2016 Product data sheet 1. Product profile 1.1 General description A 60 W LDMOS power transistor for broadcast and industrial applications in the HF to 1000 MHz band. Table 1. Application information VDS PL Gp D Test signal f (MHz) (V) (W) (dB) (%) pulsed RF 720 50 60 18 72 1.2 Features and benefits  Easy power control  Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 1000 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Industrial, scientific and medical applications  Broadcast transmitter applications BLP10H660P; BLP10H660PG Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLP10H660P (SOT1223-2) 1 gate 2 2 gate 1 3 drain 1 4 drain 2 5 4 4 3 1 pin 1 index 5 2 [1] source 1 2 3 aaa-003574 BLP10H660PG (SOT1224-2) 1 gate 2 2 gate 1 3 drain 1 4 drain 2 5 4 3 4 1 pin 1 index [1] source 5 2 1 2 3 aaa-003574 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLP10H660P HSOP4F plastic, heatsink small outline package; 4 leads (flat) SOT1223-2 BLP10H660PG HSOP4 SOT1224-2 plastic, heatsink small outline package; 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Max Unit VDS drain-source voltage - 110 V gate-source voltage 6 +11 V Tstg storage temperature 65 +150 C - 225 C [1] Product data sheet Min VGS Tj BLP10H660P_BLP10H660PG Conditions junction temperature [1] Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF calculator. All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 December 2016 © Ampleon Netherlands B.V. 2016. All rights reserved. 2 of 15 BLP10H660P; BLP10H660PG Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Tj = 125 C [1][2] Rth(j-c) thermal resistance from junction to case Zth(j-c) transient thermal impedance from junction Tj = 150 C; tp = 100 s; to case  = 20 % [1] [3] Typ Unit 1.1 K/W 0.37 K/W Tj is the junction temperature. [2] Rth(j-c) is measured under RF conditions. [3] See Figure 1. amp00162 1.2 Zth(j-c) (K/W) 1 (7) (6) (5) (4) (3) (2) (1) 0.8 0.6 0.4 0.2 0 10-7 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 (1)  = 1 % (2)  = 2 % (3)  = 5 % (4)  = 10 % (5)  = 20 % (6)  = 50 % (7)  = 100 % (DC) Fig 1. Transient thermal impedance from junction to case as a function of pulse duration 6. Characteristics Table 6. DC characteristics Tj = 25 C; per section unless otherwise specified. BLP10H660P_BLP10H660PG Product data sheet Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 250 A 110 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 25 mA 1.25 1.9 2.25 V VGSq gate-source quiescent voltage VDS = 50 V; ID = 10 mA - 1.7 - V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 1.4 A All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 December 2016 © Ampleon Netherlands B.V. 2016. All rights reserved. 3 of 15 BLP10H660P; BLP10H660PG Power LDMOS transistor Table 6. DC characteristics …continued Tj = 25 C; per section unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 3.9 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 140 nA RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 0.87 A - 1.2 -  Table 7. AC characteristics Tj = 25 C; per section unless otherwise specified. Symbol Parameter Conditions Min Typ Crs feedback capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 0.15 - Max Unit pF Ciss input capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 28.7 - pF Coss output capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 9.1 pF - Table 8. RF characteristics Test signal: pulsed RF; tp = 100 s;  = 20 %; f = 720 MHz; RF performance at VDS = 50 V; IDq = 40 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL = 60 W 16.8 18 - dB RLin input return loss PL = 60 W - 28 - dB D drain efficiency PL = 60 W 70 72 - % amp00003 40 Coss (pF) 30 20 10 0 0 10 20 30 40 50 VDS (V) 60 VGS = 0 V; f = 1 MHz. Fig 2. BLP10H660P_BLP10H660PG Product data sheet Output capacitance as a function of drain-source voltage; typical values per section All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 December 2016 © Ampleon Netherlands B.V. 2016. All rights reserved. 4 of 15 BLP10H660P; BLP10H660PG Power LDMOS transistor 7. Test information 7.1 Ruggedness in class-AB operation The BLP10H660P and BLP10H660PG are capable of withstanding a load mismatch corresponding to VSWR > 40 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 40 mA; PL = 60 W pulsed; f = 720 MHz. 7.2 Impedance information drain 1 gate 1 Zi ZL gate 2 drain 2 001aan207 Fig 3. Definition of transistor impedance Table 9. Typical push-pull impedance Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL = 60 W. BLP10H660P_BLP10H660PG Product data sheet f Zi ZL (MHz) () () 720 8.0  j16.2 16.6 + j22.8 All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 December 2016 © Ampleon Netherlands B.V. 2016. All rights reserved. 5 of 15 BLP10H660P; BLP10H660PG Power LDMOS transistor 7.3 Test circuit 200 mm C7 R1 R2 C5 L3 C15 R7 C17 L2 C19 R5 C1 80 mm C2 C10 C3 C4 C9 C13 C12 C11 C14 C20 R6 C18 R8 L1 R3 R4 C8 C16 L4 C6 amp00163 Printed-Circuit Board (PCB): RF-35; r = 3.5 F/m; thickness = 0.765 mm; thickness copper plating = 35 m. See Table 10 for a list of components. Fig 4. Component layout for class-AB production test circuit Table 10. List of components For test circuit see Figure 4. BLP10H660P_BLP10H660PG Product data sheet Component Description Value C1, C2 multilayer ceramic chip capacitor 33 pF ATC 800B C3 multilayer ceramic chip capacitor 4.3 pF ATC 100A C4 multilayer ceramic chip capacitor 4.7 pF ATC 100A C5, C6 multilayer ceramic chip capacitor 150 pF ATC 100A C7, C8 electrolytic capacitor C9 multilayer ceramic chip capacitor 10 pF 1 F, 50 V Remarks GRM32RR71H105KA01L ATC 800B C10, C11 multilayer ceramic chip capacitor 5.6 pF ATC 800B C12 multilayer ceramic chip capacitor 5.6 pF ATC 800B C13, C14 multilayer ceramic chip capacitor 27 pF ATC 800B C15, C16 multilayer ceramic chip capacitor 150 pF ATC 800B C17, C18 multilayer ceramic chip capacitor 4.7 F, 100 V TDK: C5750X7R2A475KT/A C19, C20 electrolytic capacitor 1000 F, 63 V Vishay L1 coaxial balun L = 64.8 mm EZ_86_TP_M17 L2 coaxial balun L = 64.8 mm EZ_86_TP_M17 L3, L4 inductor 90 nH 132-9SMGL R1, R2, R3, R4 resistor 4.7  SMD 1206 R5, R6 resistor 50 m, 5 W FC4L110R010FER R7, R8 resistor 7.5  SMD 1206 All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 December 2016 © Ampleon Netherlands B.V. 2016. All rights reserved. 6 of 15 BLP10H660P; BLP10H660PG Power LDMOS transistor 7.4 Graphical data amp00164 20 80 Gp (dB) ηD (%) 18 amp00165 56 PL (dBm) 60 52 Ideal PL (2) Gp 16 40 48 PL (1) 14 20 44 0 40 ηD 12 0 10 20 30 40 50 60 PL (W) 70 24 VDS = 50 V; IDq = 40 mA; f = 720 MHz; tp = 100 s;  = 20 %. 26 28 30 32 Pi (dBm) 34 VDS = 50 V; IDq = 40 mA; f = 720 MHz; tp = 100 s;  = 20 %. (1) PL(1dB) = 47.8 dBm (60 W) at Pi = 29.5 dBm (2) PL(3dB) = 48.3 dBm (67.5 W) at Pi = 32.1 dBm Fig 5. Power gain and drain efficiency as function of output power; typical values BLP10H660P_BLP10H660PG Product data sheet Fig 6. Output power as a function of input power; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 December 2016 © Ampleon Netherlands B.V. 2016. All rights reserved. 7 of 15 BLP10H660P; BLP10H660PG Power LDMOS transistor amp00166 22 Gp (dB) amp00167 80 ηD (%) 20 (1) (2) (3) (4) (5) (6) (7) (8) 60 18 (8) (7) (6) (5) (4) (3) (2) (1) 16 14 40 20 12 10 0 0 10 20 30 40 50 60 PL (W) 70 0 VDS = 50 V; f = 720 MHz; tp = 100 s;  = 20 %. 10 20 (1) IDq = 10 mA (2) IDq = 20 mA (2) IDq = 20 mA (3) IDq = 40 mA (3) IDq = 40 mA (4) IDq = 80 mA (4) IDq = 80 mA (5) IDq = 120 mA (5) IDq = 120 mA (6) IDq = 160 mA (6) IDq = 160 mA (7) IDq = 240 mA (7) IDq = 240 mA (8) IDq = 320 mA (8) IDq = 320 mA Power gain as a function of output power; typical values BLP10H660P_BLP10H660PG Product data sheet 40 50 60 PL (W) 70 VDS = 50 V; f = 720 MHz; tp = 100 s;  = 20 %. (1) IDq = 10 mA Fig 7. 30 Fig 8. Drain efficiency as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 December 2016 © Ampleon Netherlands B.V. 2016. All rights reserved. 8 of 15 BLP10H660P; BLP10H660PG Power LDMOS transistor amp00168 22 Gp (dB) amp00169 80 ηD (%) (5) (4) (3) 30 40 (2) (1) (6) 20 (7) 60 18 16 (2) (3) (1) 40 (4) (5) 14 (6) 20 (7) 12 10 0 0 10 20 30 40 50 60 PL (W) 70 IDq = 40 mA; f = 720 MHz; tp = 100 s;  = 20 %. 0 10 (1) VDS = 50 V (2) VDS = 45 V (2) VDS = 45 V (3) VDS = 40 V (3) VDS = 40 V (4) VDS = 35 V (4) VDS = 35 V (5) VDS = 30 V (5) VDS = 30 V (6) VDS = 25 V (6) VDS = 25 V (7) VDS = 20 V Product data sheet 60 PL (W) 70 (7) VDS = 20 V Power gain as a function of output power; typical values BLP10H660P_BLP10H660PG 50 IDq = 40 mA; f = 720 MHz; tp = 100 s;  = 20 %. (1) VDS = 50 V Fig 9. 20 Fig 10. Drain efficiency as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 December 2016 © Ampleon Netherlands B.V. 2016. All rights reserved. 9 of 15 BLP10H660P; BLP10H660PG Power LDMOS transistor 8. Package outline HSOP4F: plastic, heatsink small outline package; 4 leads(flat) SOT1223-2 D E X c B D3 A E3 y v HE A D1 D2 b w 4 B 3 (8x) METAL PROTRUSIONS (SOURCE) e4 (2x) F (4x) e3 (2x) E2 E1 A A2 A1 pin 1 index Q1 detail X 1 2 e1 (2x) e2 (2x) e Q1 0 10 mm scale Dimensions (mm are the original dimensions) Unit mm max nom min A A1 3.9 0.2 0.1 0 A2 b c D(1) D1 D2 D3 E(1) E1 E2 E3 e e1 e2 e3 e4 3.65 3.90 0.27 20.62 19.00 16.05 20.44 10.01 8.18 5.89 9.83 3.60 3.85 0.22 20.57 18.95 16.00 20.39 9.96 8.13 5.84 9.78 8.85 8.45 9.55 2.97 4.07 3.55 3.80 0.17 20.52 18.90 15.95 20.34 9.91 8.08 5.79 9.73 Note 1. Package body dimensions “D and “E do not include mold and metal protrusions. Allowable protrusion is 0.25 mm per side. 2. Lead width dimension “b does not include dambar protrusions. Allowable dambar protrusion is 0.25 mm in total per lead. Outline version v References IEC JEDEC JEITA w 1.62 1.57 0.25 0.25 1.52 European projection F y 0.1 HE 16.16 0.4 15.96 15.76 sot1223-2_po Issue date 15-01-12 15-06-04 SOT1223-2 Fig 11. Package outline SOT1223-2 (HSOP4F) BLP10H660P_BLP10H660PG Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 December 2016 © Ampleon Netherlands B.V. 2016. All rights reserved. 10 of 15 BLP10H660P; BLP10H660PG Power LDMOS transistor HSOP4: plastic, heatsink small outline package; 4 leads SOT1224-2 D X E c D3 B E3 y A v HE A D1 D2 b w 4 e4 (2x) 3 B (8x) METAL PROTRUSIONS (SOURCE) e3 Q (2x) E2 E1 A2 A (A3) A1 A4 pin 1 index Lp 1 2 θ H detail X e1 (2x) e2 (2x) e HE 0 Lp Q v w 13.5 1.10 2.07 13.2 0.95 2.02 0.25 0.25 12.9 0.80 1.97 10 mm scale y θ 0.1 7° 3° 0° Dimensions (mm are the original dimensions) Unit mm max nom min A A1 3.9 0.2 0.1 0 A2 A3 A4 b D(1) c D1 D2 D3 E(1) E1 E2 E3 e e1 e2 e4 3.65 0.06 3.90 0.27 20.62 19.00 16.05 20.44 10.01 8.18 5.89 9.83 0 3.60 0.35 3.85 0.22 20.57 18.95 16.00 20.39 9.96 8.13 5.84 9.78 8.85 8.45 9.55 2.97 4.07 -0.02 3.80 0.17 20.52 18.90 15.95 20.34 9.91 8.08 5.79 9.73 3.55 Note 1. Package body dimensions “D and “E do not include mold and metal protrusions. Allowable protrusion is 0.25 mm per side. 2. Lead width dimension “b does not include dambar protrusions. Allowable dambar protrusion is 0.25 mm in total per lead. 3. Dimension A4 is measured with respect to bottom of the heatsink DATUM H. Positive value means that the bottom of the heatsink is higher than the bottom of the lead. Outline version e3 References IEC JEDEC JEITA European projection sot1224-2_po Issue date 15-01-13 15-06-04 SOT1224-2 Fig 12. Package outline SOT1224-2 (HSOP4) BLP10H660P_BLP10H660PG Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 December 2016 © Ampleon Netherlands B.V. 2016. All rights reserved. 11 of 15 BLP10H660P; BLP10H660PG Power LDMOS transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. Table 11. ESD sensitivity ESD model Class Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002 C1 [1] Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001 1C [2] [1] CDM classification C1 is granted to any part that passes after exposure to an ESD pulse of 250 V, but fails after exposure to an ESD pulse of 500 V. [2] HBM classification 1C is granted to any part that passes after exposure to an ESD pulse of 1000 V, but fails after exposure to an ESD pulse of 2000 V. 10. Abbreviations Table 12. Abbreviations Acronym Description CW Continuous Wave ESD ElectroStatic Discharge HF High Frequency LDMOS Laterally Diffused Metal-Oxide Semiconductor MTF Median Time to Failure SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio 11. Revision history Table 13. Revision history Document ID Release date Data sheet status Change notice Supersedes BLP10H660P_BLP10H660PG v.1 20161220 Product data sheet - - BLP10H660P_BLP10H660PG Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 December 2016 © Ampleon Netherlands B.V. 2016. All rights reserved. 12 of 15 BLP10H660P; BLP10H660PG Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Ampleon and its customer, unless Ampleon and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Ampleon product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Ampleon does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Ampleon takes no responsibility for the content in this document if provided by an information source outside of Ampleon. In no event shall Ampleon be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Ampleon’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Ampleon. Right to make changes — Ampleon reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLP10H660P_BLP10H660PG Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 December 2016 © Ampleon Netherlands B.V. 2016. All rights reserved. 13 of 15 BLP10H660P; BLP10H660PG Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’ standard warranty and Ampleon’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. 13. Contact information For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales BLP10H660P_BLP10H660PG Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 December 2016 © Ampleon Netherlands B.V. 2016. All rights reserved. 14 of 15 BLP10H660P; BLP10H660PG Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 Ruggedness in class-AB operation . . . . . . . . . 5 Impedance information . . . . . . . . . . . . . . . . . . . 5 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Handling information. . . . . . . . . . . . . . . . . . . . 12 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon Netherlands B.V. 2016. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 20 December 2016 Document identifier: BLP10H660P_BLP10H660PG