BLP9H10S-500AWTY

BLP9H10S-500AWT Power LDMOS transistor Rev. 2 — 18 December 2020 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 600 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty circuit; VDS = 48 V; IDq = 200 mA (main); VGS(amp)peak = 0.3 V, unless otherwise specified. Test signal 1-carrier W-CDMA [1] f VDS PL(AV) Gp D ACPR (MHz) (V) (dBm) (dB) (%) (dBc) 758 to 821 48 50.1 17.6 52.4 29.8 [1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01 % probability on CCDF. 1.2 Features and benefits          Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent digital pre-distortion capability Internal integrated wideband input and output matching for ease of use Integrated double sided ESD protection Bias through video leads For RoHS compliance see the product details on the Ampleon website 1.3 Applications  RF power amplifiers for base stations and multi carrier applications in the 600 MHz to 960 MHz frequency range BLP9H10S-500AWT Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1, 2 gate 3, 6 decoupling lead 4, 5 drain 7 source Simplified outline 6 5 Graphic symbol 4 3 4 3 2 [1] 7 1 1 6 2 5 amp01359 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLP9H10S-500AWT - OMP-780-6F-1 overmolded plastic earless flanged package; 6 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage - 105 V VGS(amp)main main amplifier gate-source voltage 6 +11 V VGS(amp)peak peak amplifier gate-source voltage 6 +11 V Tstg storage temperature 65 +150 C Tj junction temperature [1] - 225 C case temperature [1] 40 +125 C Tcase [1] Conditions operating Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF calculator. 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-c) BLP9H10S-500AWT Product data sheet Conditions thermal resistance from junction to case Typ Unit PL = 76 W 0.55 K/W PL = 85 W 0.51 K/W VDS = 48 V; IDq = 500 mA (main); VGS(amp)peak = 0.3 V; Tcase = 80 C All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 December 2020 © Ampleon Netherlands B.V. 2020. All rights reserved. 2 of 19 BLP9H10S-500AWT Power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 108 - - V 2.0 2.5 V V Main device V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.5 mA VGS(th) gate-source threshold voltage VDS = 10 V; ID = 150 mA 1.5 VGSq gate-source quiescent voltage VDS = 48 V; ID = 500 mA 1.55 2.07 2.55 IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 1.4 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 23.8 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 140 nA gfs forward transconductance VDS = 10 V; ID = 7.5 A RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 5.25 A - 10.2 - S - 154 250 m Peak device V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.2 mA 108 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 220 mA 1.5 1.9 2.5 V VGSq gate-source quiescent voltage VDS = 48 V; ID = 1100 mA 1.5 1.99 2.5 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 1.4 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V - 34.5 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 140 nA gfs forward transconductance VDS = 10 V; ID = 11 A - 15.0 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 7.7 A - 109 174 m Table 7. RF characteristics A derivative functional RF test is performed in production. The performance as mentioned below is based on an asymmetrical Doherty application board and correlated to the production circuit. Test signal: 1-carrier W-CDMA; PAR = 9.6 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 1 - 64 DPCH; f1 = 793.5 MHz; f2 = 818.5 MHz; RF performance at VDS = 48 V; IDq = 500 mA (main); VGS(amp)peak = 0.3 V; Tcase = 25 C; unless otherwise specified; in an asymmetrical Doherty test circuit at frequencies from 791 MHz to 821 MHz. BLP9H10S-500AWT Product data sheet Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 76 W 17.5 18.3 - dB RLin input return loss PL(AV) = 76 W - 12.7 9 dB D drain efficiency PL(AV) = 76 W 47 51 - % ACPR adjacent channel power ratio PL(AV) = 76 W - 34.8 32 dBc All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 December 2020 © Ampleon Netherlands B.V. 2020. All rights reserved. 3 of 19 BLP9H10S-500AWT Power LDMOS transistor Table 8. RF characteristics A derivative functional RF test is performed in production. The performance as mentioned below is based on an asymmetrical Doherty application board and correlated to the production circuit. Test signal: 1-carrier W-CDMA; PAR = 9.6 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 1 - 64 DPCH; f1 = 793.5 MHz; f2 = 818.5 MHz; RF performance at VDS = 48 V; IDq = 500 mA (main); VGS(amp)peak = 0.3 V; Tcase = 25 C; unless otherwise specified; in an asymmetrical Doherty test circuit at frequencies from 791 MHz to 821 MHz. Symbol Parameter Conditions Min Typ Max Unit PARO output peak-to-average ratio PL(AV) = 135 W 6.2 6.7 - dB PL(M) peak output power PL(AV) = 135 W 550 620 - W 7. Test information 7.1 Ruggedness in Doherty operation The BLP9H10S-500AWT is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 500 mA; VGS(amp)peak = 0.3 V; f = 791 MHz; PL = 200 W (5 dB OBO); 1-carrier W-CDMA signal; fc = 791 MHz; 100 % clipping. 7.2 Impedance information Table 9. Typical impedance of main device Measured load-pull data of main device; IDq = 600 mA (main); VDS = 48 V; pulsed CW (tp = 100 s;  = 10 %). f ZS [1] ZL [1] PL [2] D [2] Gp [2] (MHz) () () (W) (%) (dB) Maximum power load BLP9H10S-500AWT Product data sheet 600 5.3  j1.02 4.0  j3.1 325.5 65.7 18.0 617 4.9  j0.7 4.0  j3.1 322.3 65.1 18.3 635 4.4  j0.69 4.0  j3.1 299.8 61.0 18.3 652 4.1  j0.69 3.0  j2.4 260.2 52.9 17.6 698 3.5  j1.25 3.0  j2.4 321.7 65.1 18.7 746 3.3  j1.92 3.0  j2.4 316.8 66.0 18.7 769 3.3  j2.26 3.0  j2.4 312.4 66.9 18.8 805 3.4  j2.77 3.0  j2.4 295.2 66.7 19.0 820 3.5  j3.02 3.0  j2.4 295.5 67.9 19.0 869 4.1  j3.74 2.9  j3.8 293.2 59.5 17.9 880 4.3  j3.85 2.9  j3.8 292.0 60.7 18.0 894 4.6  j4.03 2.9  j3.8 288.0 60.5 18.0 915 5.0  j4.22 2.8  j3.8 284.9 61.7 18.1 925 5.3  j4.27 2.9  j3.8 281.2 63.1 18.2 942 5.8  j4.32 3.6  j4.9 277.9 59.7 17.8 960 6.4  j4.28 3.7  j4.9 273.1 59.9 18.0 All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 December 2020 © Ampleon Netherlands B.V. 2020. All rights reserved. 4 of 19 BLP9H10S-500AWT Power LDMOS transistor Table 9. Typical impedance of main device …continued Measured load-pull data of main device; IDq = 600 mA (main); VDS = 48 V; pulsed CW (tp = 100 s;  = 10 %). f ZS [1] ZL [1] PL [2] D [2] Gp [2] (MHz) () () (W) (%) (dB) Maximum drain efficiency load 600 4.8  j1.33 11.3  j5.5 172.5 70.9 20.6 617 4.6  j0.90 8.4  j3.6 217.9 69.9 20.1 635 4.3  j0.74 6.3  j2.6 249.6 66.4 19.6 652 3.9  j0.80 6.2  j2.5 202.3 59.4 19.4 698 3.4  j1.47 6.7  j0.4 194.9 71.8 21.0 746 3.2  j2.07 5.0  j0.3 214.0 72.7 20.7 769 3.2  j2.37 5.0  j0.3 206.7 72.5 20.7 805 3.3  j2.82 3.7  j0.2 198.4 72.3 20.7 820 3.4  j3.06 3.7  j0.2 197.6 72.1 20.7 869 4.0  j3.78 3.5  j0.2 175.3 71.1 20.7 880 4.2  j3.86 3.3  j1.3 211.1 70.1 20.1 894 4.5  j3.97 3.3  j1.3 197.0 69.2 20.2 915 4.9  j4.12 3.2  j1.3 184.8 69.1 20.2 925 5.2  j4.14 3.2  j1.3 176.3 69.2 20.4 942 5.7  j4.20 2.8  j2.2 200.7 68.0 19.9 960 6.3  j4.08 2.8  j2.2 186.2 67.2 20.1 [1] ZS and ZL defined in Figure 1. [2] At 3 dB gain compression. drain gate ZL ZS amp01312 Fig 1. BLP9H10S-500AWT Product data sheet Definition of transistor impedance All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 December 2020 © Ampleon Netherlands B.V. 2020. All rights reserved. 5 of 19 BLP9H10S-500AWT Power LDMOS transistor Table 10. Typical impedance of peak device Measured load-pull data of peak device; IDq = 880 mA (peak); VDS = 48 V; pulsed CW (tp = 100 s;  = 10 %). f ZS [1] ZL [1] PL [2] D [2] Gp [2] (MHz) () () (W) (%) (dB) Maximum power load 600 3.6  j1.13 2.4  j3.8 453.6 59.5 17.1 617 3.3  j1.06 2.4  j3.8 438.9 57.9 17.4 698 2.9  j1.78 1.8  j3.1 445.0 58.2 17.2 746 3.0  j2.21 1.8  j3.1 435.8 59.4 17.5 769 3.2  j2.38 2.4  j3.8 428.1 61.6 17.8 800 3.4  j2.56 2.4  j3.8 416.7 61.9 17.9 805 3.4  j2.61 2.4  j3.8 434.3 63.3 17.9 820 3.6  j2.64 2.4  j3.8 430.1 63.5 17.8 869 4.3  j2.57 2.4  j3.8 408.4 64.4 18.0 880 4.4  j2.47 2.4  j3.8 402.0 64.4 18.1 894 4.6  j2.28 2.3  j3.8 388.3 64.0 18.3 915 5.0  j1.89 1.5  j4.3 382.7 54.3 16.9 942 5.0  j1.31 1.9  j5.1 381.3 52.5 16.5 960 4.9  j0.83 1.9  j5.2 378.2 53.7 16.8 Maximum drain efficiency load BLP9H10S-500AWT Product data sheet 600 3.5  j1.19 4.0  j3.9 399.5 69.1 18.7 617 3.1  j1.12 5.0  j2.9 346.6 68.7 19.7 698 2.8  j1.85 3.8  j2.2 336.0 70.9 19.6 746 2.9  j2.22 2.9  j1.7 326.6 70.1 19.6 769 3.0  j2.38 2.9  j1.7 306.2 69.9 19.7 800 3.3  j2.54 2.9  j1.7 278.3 68.9 20.0 805 3.3  j2.78 2.3  j0.7 263.7 73.8 20.5 820 3.5  j2.62 2.9  j1.7 299.2 72.5 20.0 869 4.2  j2.42 2.9  j1.7 257.3 70.1 20.1 880 4.4  j2.38 2.4  j2.5 312.8 69.8 19.5 894 4.5  j2.15 2.4  j2.5 293.7 68.4 19.7 915 4.7  j1.72 2.4  j2.5 270.8 68.0 19.8 942 4.5  j1.12 2.4  j2.5 238.7 66.1 19.9 960 4.6  j0.78 2.4  j3.8 318.0 64.1 18.9 [1] ZS and ZL defined in Figure 1. [2] At 3 dB gain compression. All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 December 2020 © Ampleon Netherlands B.V. 2020. All rights reserved. 6 of 19 BLP9H10S-500AWT Power LDMOS transistor 7.3 Recommended impedances for Doherty design Table 11. Typical impedance of main at 1 : 1 load Measured load-pull data of main device; IDq = 750 mA (main); VDS = 48 V; pulsed CW (tp = 100 s;  = 10 %). f ZS [1] ZL [1] PL(3dB) D [2] Gp [2] (MHz) () () (W) (%) (dB) 720 3.3  j1.7 3.6  j2.1 304 35.1 22.6 800 3.5  j3.0 3.5  j2.3 303 34.9 22.5 820 3.7  j3.4 3.4  j2.3 298 35.3 21.9 869 4.5  j4.2 3.0  j2.2 297 39.3 22.5 894 5.1  j4.5 3.1  j2.0 295 37.4 22.2 [1] ZS and ZL defined in Figure 1. [2] At PL(AV) = 76 W. Table 12. Typical impedance of main device at 1 : 2.5 load Measured load-pull data of main device; IDq = 750 mA (main); VDS = 48 V; pulsed CW (tp = 100 s;  = 10 %). f ZS [1] ZL [1] PL(3dB) D [2] Gp [2] (MHz) () () (W) (%) (dB) 720 3.2  j2.0 6.6 + j1.4 172 49.2 24.8 800 3.4  j3.1 5.4 + j1.1 172 50.8 24.0 820 3.7  j3.4 4.9 + j1.0 174 50.5 24.0 869 4.5  j4.3 3.7 + j0.4 174 54.3 24.1 894 5.1  j4.6 3.6 + j0.4 175 52.6 24.1 [1] ZS and ZL defined in Figure 1. [2] At PL(AV) = 76 W. Table 13. Typical impedance of peak device at 1 : 1 load Measured load-pull data of peak device; IDq = 1100 mA (peak); VDS = 48 V; pulsed CW (tp = 100 s;  = 10 %). BLP9H10S-500AWT Product data sheet f ZS [1] ZL [1] PL(3dB) D [2] Gp [2] (MHz) () () (W) (%) (dB) 720 2.7  j2.0 3.0  j2.4 401 34.3 22.8 800 3.2  j2.5 2.8  j2.7 400 32.0 22.1 820 3.4  j2.6 2.5  j3.0 412 30.8 21.6 869 4.1  j2.6 2.4  j3.2 399 30.6 21.5 894 4.5  j2.4 2.3  j3.3 387 30.9 21.3 [1] ZS and ZL defined in Figure 1. [2] At PL(AV) = 76 W. All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 December 2020 © Ampleon Netherlands B.V. 2020. All rights reserved. 7 of 19 BLP9H10S-500AWT Power LDMOS transistor Table 14. BLP9H10S-500AWT Product data sheet Off-state impedances of peak device f Zoff (MHz) () 600 1.9 + j14.7 698 83.9  j20.5 720 24.9  j37.2 769 3.9  j14.7 800 2.1  j9.9 820 1.6  j7.9 869 0.9  j4.7 880 0.9  j4.3 894 0.8  j3.9 925 0.6  j2.9 942 0.6  j2.3 960 0.5  j1.9 All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 December 2020 © Ampleon Netherlands B.V. 2020. All rights reserved. 8 of 19 BLP9H10S-500AWT Power LDMOS transistor 7.4 Test circuit 110 mm C1 C12 C4 C10 C9 R3 C13 C5 C8 C2 C6 C7 C3 R1 80 mm C23 CPL1 C4 C19 C20 C26 C16 R4 C15 C14 C17 C22 C25 C27 C18 C24 amp01149 Printed-Circuit Board (PCB): RO4360: r = 6.15; thickness = 0.508 mm; thickness copper plating = 35 m. See Table 15 for a list of components. Fig 2. Component layout Table 15. List of components See Figure 2 for component layout. BLP9H10S-500AWT Product data sheet Component Description Value Remarks C1, C10, C12, C18, C22, C25 multilayer ceramic chip capacitor 4.7 F Murata: SMD 1210 C2, C4 multilayer ceramic chip capacitor 5.1 pF Murata: Hi-Q SMD 0805 C3 multilayer ceramic chip capacitor 8 pF Murata: Hi-Q SMD 0805 C4, C9, C17, C27 multilayer ceramic chip capacitor 100 pF Murata: Hi-Q SMD 0805 C5 multilayer ceramic chip capacitor 1.5 pF Murata: Hi-Q SMD 0805 C6, C7, C19, C20 multilayer ceramic chip capacitor 100 pF Murata: Hi-Q SMD 0805 C8 multilayer ceramic chip capacitor 10 pF Murata: Hi-Q SMD 0805 C13, C24 electrolytic capacitor 470 F, 63 V C14 multilayer ceramic chip capacitor 6.2 pF Murata: Hi-Q SMD 0805 C15 multilayer ceramic chip capacitor 11 pF Murata: Hi-Q SMD 0805 C16 multilayer ceramic chip capacitor 3.3 pF Murata: Hi-Q SMD 0805 C23, C26 multilayer ceramic chip capacitor 8.2 pF Murata: Hi-Q SMD 0805 R1 termination 50  Anaren: C16A50Z4 R3, R4 resistor 5.1 , 1 % SMD 805 CPL1 hybrid coupler 2 dB; 90 Anaren: Xinger III, X3C07F1-02S All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 December 2020 © Ampleon Netherlands B.V. 2020. All rights reserved. 9 of 19 BLP9H10S-500AWT Power LDMOS transistor 7.5 Graphical data 7.5.1 Pulsed CW amp01360 20 (1) (2) (3) Gp (dB) 19 70 ηD (%) 60 (3) (2) (1) 18 amp01361 2 AM to PM (deg) -2 50 -6 Gp 17 40 (3) -10 16 30 15 20 (2) (1) -14 ηD 14 10 40 44 48 52 56 PL (dBm) -18 60 40 VDS = 48 V; IDq = 500 mA; VGS(amp)peak = 0.34 V; tp = 100 s;  = 10 %. 44 (1) f = 758 MHz (2) f = 798 MHz (2) f = 798 MHz (3) f = 821 MHz (3) f = 821 MHz Power gain and drain efficiency as function of output power; typical values BLP9H10S-500AWT Product data sheet 52 56 PL (dBm) 60 VDS = 48 V; IDq = 500 mA; VGS(amp)peak = 0.34 V; tp = 100 s;  = 10 %. (1) f = 758 MHz Fig 3. 48 Fig 4. Normalized AM to PM as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 December 2020 © Ampleon Netherlands B.V. 2020. All rights reserved. 10 of 19 BLP9H10S-500AWT Power LDMOS transistor 7.5.2 1-Carrier W-CDMA PAR = 9.9 dB per carrier at 0.01 % probability on CCDF; 3GPP test model 1 with 64 DPCH (100 % clipping). amp01362 20 60 Gp (dB) ηD (%) 19 (1) (2) (3) (3) (2) (1) 50 18 amp01363 0 ACPR5M (dBc) -10 40 -20 Gp 17 30 16 20 (1) (2) (3) -30 15 -40 10 ηD 14 0 36 40 44 48 52 PL (dBm) -50 56 36 VDS = 48 V; IDq = 500 mA; VGS(amp)peak = 0.34 V. 40 44 (1) f = 758 MHz (2) f = 798 MHz (2) f = 798 MHz (3) f = 821 MHz 52 PL (dBm) 56 VDS = 48 V; IDq = 500 mA; VGS(amp)peak = 0.34 V. (1) f = 758 MHz Fig 5. 48 (3) f = 821 MHz Power gain and drain efficiency as function of output power; typical values Fig 6. amp01364 28 RLin (dB) Adjacent channel power ratio (5 MHz) as a function of output power; typical values amp01365 12 PAR (dB) 24 10 20 8 (3) (2) (1) (1) 16 6 (2) (3) 12 4 8 2 36 40 44 48 52 PL (dBm) 56 36 VDS = 48 V; IDq = 500 mA; VGS(amp)peak = 0.34 V. 40 (1) f = 746 MHz (2) f = 798 MHz (2) f = 798 MHz (3) f = 821 MHz (3) f = 859 MHz Input return loss as a function of output power; typical values BLP9H10S-500AWT Product data sheet 48 52 PL (dBm) 56 VDS = 50 V; IDq = 500 mA; VGS(amp)peak = 0.4 V. (1) f = 758 MHz Fig 7. 44 Fig 8. Peak-to-average power ratio as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 December 2020 © Ampleon Netherlands B.V. 2020. All rights reserved. 11 of 19 BLP9H10S-500AWT Power LDMOS transistor 7.5.3 2-Tone VBW amp01366 0 IMD (dBc) (1) (2) -20 IMD3 (1) (2) IMD5 -40 IMD7 (1) (2) -60 -80 -100 1 10 102 carrier spacing (MHz) 103 VDS = 50 V; IDq = 520 mA; VGS(amp)peak = 0.25 V; fc = 798 MHz; PL = 48.8 dBm. (1) IMD low (2) IMD high Fig 9. BLP9H10S-500AWT Product data sheet VBW capability in Doherty demo board All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 December 2020 © Ampleon Netherlands B.V. 2020. All rights reserved. 12 of 19 BLP9H10S-500AWT Power LDMOS transistor 8. Package outline OMP-780-6F-1 25.20 (18.01) (15.44) 8.85 1.00 (3) (2.15) 5 6 E 0.10(4) (0.75) 4 R1.38 3 A 9.78 (4.47) 9.96(1) 1.65 16.00 (7.04) 19.46 B0.20 2.70 3.47 L 0.05 A P2.00 0.1Z R0.16 max. 0.10 1 2 R1.00 B 1.57 (5) L 0.25 B 3.85 (3) 20.75(1) L 0.05 B +0.08 3.92 0.03 0.22 B0.05 R0.32 20.57 Min. 5.5 Min. 7.8 (0.20) compound rim all around the perimeter of the heatsink 23.05 pin 7 (6) R0.60(4x) Min. 15.5 Min. 18.5 22.15 Package outline drawing: units in mm. Tolerances unless otherwise stated: Revision: Angle: B 1° Revision date: Dimension: B 0.05 OMP-780-6F-1 Third angle projection 0 3/1/2018 Sheet 1 of 2 Fig 10. Package outline OMP-780-6F-1 (sheet 1 of 2) BLP9H10S-500AWT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 December 2020 © Ampleon Netherlands B.V. 2020. All rights reserved. 13 of 19 BLP9H10S-500AWT Power LDMOS transistor OMP-780-6F-1 Drawing Notes Description Items Dimensions are excluding mold protrusion. Areas located adjacent to the leads have a maximum mold protrusion of 0.25 (1) mm (per side) and 0.62 mm max. in length. In between the 14 leads the protrusion is 0.25 mm. max. At all other areas the mold protrusion is maximum 0.15 mm per side. See also detail B. (2) The metal protrusion (tie bars) in the corner will not stick out of the molding compound protrusions (detail A). (3) The lead dambar (metal) protrusions are not included. Add 0.14 mm max to the total lead dimension at the dambar location. (4) The lead coplanarity over all leads is 0.1 mm maximum. (5) Dimension is measured 0.5 mm from the edge of the top package body. (6) The hatched area indicates the exposed metal heatsink. (7) The leads and exposed heatsink are plated with matte Tin (Sn). location of metal protrusion (2) DETAIL A SCALE 25:1 B A 0 ma .2 5 x. (1 lead dambar location ) 0 m .2 5 ax 1) .( 5 0 .1 0 .6 2m ax .(1 ma 1) x .( ) DETAIL B SCALE 50:1 Package outline drawing: units in mm. Tolerances unless otherwise stated: Revision: Angle: B 1° Revision date: Dimension: B 0.05 OMP-780-6F-1 Third angle projection 0 3/1/2018 Sheet 2 of 2 Fig 11. Package outline OMP-780-6F-1 (sheet 2 of 2) BLP9H10S-500AWT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 December 2020 © Ampleon Netherlands B.V. 2020. All rights reserved. 14 of 19 BLP9H10S-500AWT Power LDMOS transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. Table 16. ESD sensitivity ESD model Class Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002 C3 [1] Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001 2 [2] [1] CDM classification C3 is granted to any part that passes after exposure to an ESD pulse of 1000 V. [2] HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V. 10. Abbreviations Table 17. BLP9H10S-500AWT Product data sheet Abbreviations Acronym Description 3GPP 3rd Generation Partnership Project AM Amplitude Modulation CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal-Oxide Semiconductor OBO Output Back Off MTF Median Time to Failure PAR Peak-to-Average Ratio PM Phase Modulation RoHS Restriction of Hazardous Substances SMD Surface Mounted Device VBW Video BandWidth VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 December 2020 © Ampleon Netherlands B.V. 2020. All rights reserved. 15 of 19 BLP9H10S-500AWT Power LDMOS transistor 11. Revision history Table 18. Revision history Document ID Release date Data sheet status Change notice Supersedes BLP9H10S-500AWT v.2 20201218 Product data sheet - BLP9H10S-500AWT v.1 Modifications: BLP9H10S-500AWT v.1 BLP9H10S-500AWT Product data sheet • • • • • • Changed data sheet status from objective to product Table 6 on page 3: updated table Table 7 on page 3: updated table Table 8 on page 4: updated table Section 7.1 on page 4: changed IDq from 490 mA to 500 mA Table 14 on page 8: updated table 20200717 Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 December 2020 - © Ampleon Netherlands B.V. 2020. All rights reserved. 16 of 19 BLP9H10S-500AWT Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Ampleon and its customer, unless Ampleon and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Ampleon product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Maturity — The information in this document can only be regarded as final once the relevant product(s) has passed the Release Gate in Ampleon's release process. Prior to such release this document should be regarded as a draft version. Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Ampleon does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Ampleon takes no responsibility for the content in this document if provided by an information source outside of Ampleon. In no event shall Ampleon be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Ampleon’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Ampleon. BLP9H10S-500AWT Product data sheet Right to make changes — Ampleon reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 December 2020 © Ampleon Netherlands B.V. 2020. All rights reserved. 17 of 19 BLP9H10S-500AWT Power LDMOS transistor No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’s standard warranty and Ampleon’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales BLP9H10S-500AWT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 December 2020 © Ampleon Netherlands B.V. 2020. All rights reserved. 18 of 19 BLP9H10S-500AWT Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 7.5.1 7.5.2 7.5.3 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4 Ruggedness in Doherty operation . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Recommended impedances for Doherty design 7 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . 10 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . 11 2-Tone VBW . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 Handling information. . . . . . . . . . . . . . . . . . . . 15 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 17 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Contact information. . . . . . . . . . . . . . . . . . . . . 18 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon Netherlands B.V. 2020. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 18 December 2020 Document identifier: BLP9H10S-500AWT