BLS6G3135S-20,112

BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 50 mA; in a class-AB production test circuit. Mode of operation f (GHz) Pulsed RF VDS PL Gp D tr tf (V) (W) (dB) (%) (ns) (ns) 20 15.5 45 20 10 3.1 to 3.5 32 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits  Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 50 mA, a tp of 300 s and a  of 10 %:  Output power = 20 W  Power gain = 15.5 dB  Efficiency = 45 %  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (3.1 GHz to 3.5 GHz)  Internally matched for ease of use  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor 1.3 Applications  S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLS6G3135-20 (SOT608A) 1 drain 2 gate 3 source 1 1 [1] 2 3 3 2 sym112 BLS6G3135S-20 (SOT608B) 1 drain 2 gate 3 source 1 1 [1] 3 2 3 2 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLS6G3135-20 - flanged ceramic package; 2 mounting holes; 2 leads SOT608A ceramic earless flanged package; 2 leads SOT608B BLS6G3135S-20 - 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage Conditions - 60 V VGS gate-source voltage 0.5 +13 V ID drain current - 2.1 A Tstg storage temperature 65 +150 C Tj junction temperature - 225 C BLS6G3135-20_6G3135S-20#5 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 2 of 13 BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Max Unit Rth(j-case) thermal resistance from junction to case Tcase = 80 C; PL = 20 W tp = 100 s;  = 20 % 0.76 0.92 K/W tp = 300 s;  = 10 % 0.79 0.95 K/W 6. Characteristics Table 6. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.5 mA 60 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 40 mA 1.4 2 2.4 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 1.5 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 6 8.2 - A IGSS gate leakage current VGS = 8.3 V; VDS = 0 V - - 150 nA gfs forward transconductance VDS = 10 V; ID = 1.4 A - 2.8 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 1.4 A - 0.37 0.58  7. Application information Table 7. Application information Mode of operation: pulsed RF; tp = 300 s;  = 10 %; RF performance at VDS = 32 V; IDq = 50 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production circuit. Symbol Parameter PL output power VCC supply voltage Gp Conditions Min Typ Max Unit - 20 - W PL = 20 W - - 32 V power gain PL = 20 W 12 15.5 - dB D drain efficiency PL = 20 W 40 45 - % tr rise time PL = 20 W - 20 50 ns tf fall time PL = 20 W - 10 50 ns BLS6G3135-20_6G3135S-20#5 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 3 of 13 BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor 7.1 Impedance information Table 8. Typical impedance f ZS ZL (optimized for D) ZL (optimized for Gp) Gp(opt) D [1] GHz    dB % 3.1 31.24  j31.07 6.99 + j12.9 13.01 + j14.75 18.08 48.34 3.2 50.56  j12.48 5.82 + j8.77 11.47 + j11.17 17.97 45.60 3.3 43.66 + j17.27 2.32 + j6.17 10.05 + j10.55 17.75 47.01 3.4 24.13 + j28.47 5.52 + j6.10 9.93 + j8.48 17.91 47.03 3.5 10.56 + j22.21 5.79 + j3.19 9.37 + j5.73 17.68 46.54 [1] Measured with ZL optimized for Gp. drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.2 Ruggedness in class-AB operation The BLS6G3135-20 and BLS6G3135S-20 are capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 50 mA; PL = 20 W; tp = 300 s;  = 10 %. BLS6G3135-20_6G3135S-20#5 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 4 of 13 BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor 7.3 Graphs 001aaf983 17 ηD Gp (dB) ηD (%) Gp 15 001aaf984 17 50 Gp (dB) (2) 15 40 (3) (1) 13 30 13 11 20 11 9 10 9 7 3 3.2 7 0 3.6 3.4 0 10 20 f (GHz) 30 PL (W) VDS = 32 V; IDq = 50 mA; tp = 300 s;  = 10 %; PL = 20 W. VDS = 32 V; IDq = 50 mA; tp = 300 s;  = 10 %. (1) f = 3.1 GHz (2) f = 3.3 GHz (3) f = 3.5 GHz Fig 2. Power gain and drain efficiency as functions of frequency; typical values Fig 3. 001aaf985 60 Power gain as a function of load power; typical values 001aaf986 30 (2) (3) ηD (%) (1) PL (W) (1) 50 (2) (3) 20 40 30 10 20 10 0 0 10 20 30 0 PL (W) 0.8 1.2 Pi (W) VDS = 32 V; IDq = 50 mA; tp = 300 s;  = 10 %. VDS = 32 V; IDq = 50 mA; tp = 300 s;  = 10 %. (1) f = 3.1 GHz (1) f = 3.1 GHz (2) f = 3.3 GHz (2) f = 3.3 GHz (3) f = 3.5 GHz (3) f = 3.5 GHz Fig 4. 0.4 Efficiency as a function of load power; typical values Fig 5. Load power as a function of input power; typical values BLS6G3135-20_6G3135S-20#5 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 5 of 13 BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor 001aaf987 17 Gp (dB) ηD (%) Gp 15 (2) Gp (dB) (3) 40 14 13 30 12 11 20 10 9 10 8 7 3 3.2 (1) 6 0 3.6 3.4 001aaf988 16 50 ηD 0 10 20 f (GHz) 30 PL (W) VDS = 32 V; IDq = 100 mA; tp = 50 s;  = 20 %; PL = 20 W. VDS = 32 V; IDq = 50 mA; tp = 100 s;  = 20 %. (1) f = 3.1 GHz (2) f = 3.3 GHz (3) f = 3.5 GHz Fig 6. Power gain and drain efficiency as functions of frequency; typical values Fig 7. 001aaf989 60 ηD (%) Power gain as a function of load power; typical values 001aaf990 30 (2) (3) (1) PL (W) (1) 50 (2) (3) 20 40 30 10 20 10 0 0 10 20 30 0 PL (W) 0.8 1.2 Pi (W) VDS = 32 V; IDq = 50 mA; tp = 100 s;  = 20 %. VDS = 32 V; IDq = 50 mA; tp = 100 s;  = 20 %. (1) f = 3.1 GHz (1) f = 3.1 GHz (2) f = 3.3 GHz (2) f = 3.3 GHz (3) f = 3.5 GHz (3) f = 3.5 GHz Fig 8. 0.4 Efficiency as a function of load power; typical values Fig 9. Load power as a function of input power; typical values BLS6G3135-20_6G3135S-20#5 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 6 of 13 BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor 8. Test information C5 C3 C4 C10 C13 C11 C9 C12 VDD C8 C7 VGG L1 C6 R1 λ / 4-line λ / 4-line C1 C2 001aah590 Striplines are on a double copper-clad Rogers Duroid 6006 Printed-Circuit Board (PCB) with r = 6.2 and thickness = 0.64 mm. See Table 9 for list of components. Fig 10. Component layout for 3.1 GHz to 3.5 GHz test circuit Table 9. List of components See Figure 10. Component Description Value C1, C2, C5, C6, C7, C8, C9 multilayer ceramic chip capacitor 33 pF [1] C3, C4, C10, C11 multilayer ceramic chip capacitor 470 pF [2] C12 electrolytic capacitor 47 F; 63 V C13 electrolytic capacitor 10 F; 35 V L1 copper wire - R1 resistor 49.9  [1] American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. BLS6G3135-20_6G3135S-20#5 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 — 1 September 2015 Remarks © Ampleon The Netherlands B.V. 2015. All rights reserved. 7 of 13 BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor 9. Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT608A D A F 3 A w2 D1 A B C U1 q w2 B H c C A B C 1 p U2 E1 w3 A E B 2 w1 A B b C Q 0 5 10 mm scale Dimensions (millimetre dimensions are derived from the original inch dimensions) Unit mm A b c D D1 E E1 F H p Q q U1 U2 w1 w2 w3 20.45 9.91 max 4.62 7.24 0.15 10.21 10.29 10.21 10.29 1.14 15.37 3.30 1.70 0.25 0.25 0.25 15.24 nom 20.19 9.65 min 3.76 6.99 0.10 10.01 10.03 10.01 10.03 0.89 15.11 2.92 1.45 sot608a_po Outline version References IEC JEDEC JEITA European projection Issue date 09-08-26 13-01-29 SOT608A Fig 11. Package outline SOT608A BLS6G3135-20_6G3135S-20#5 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 8 of 13 BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Ceramic earless flanged package; 2 leads SOT608B D A F 3 A w2 D1 U1 A B C C c 1 U2 H E E1 2 B w2 w1 A B A B C b C Q 0 5 mm scale Dimensions (millimetre dimensions are derived from the original inch dimensions) Unit mm A b c D D1 E E1 F H Q U1 U2 w1 w2 max 4.62 7.24 0.15 10.21 10.29 10.21 10.29 1.14 15.37 1.70 10.24 10.24 0.25 0.25 nom min 3.76 6.99 0.10 10.01 10.03 10.01 10.03 0.89 15.11 1.45 9.98 9.98 sot608b_po Outline version References IEC JEDEC JEITA European projection Issue date 09-08-26 13-01-29 SOT608B Fig 12. Package outline SOT608B BLS6G3135-20_6G3135S-20#5 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 9 of 13 BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor 10. Abbreviations Table 10. Abbreviations Acronym Description LDMOS Laterally Diffused Metal Oxide Semiconductor RF Radio Frequency S-Band Short wave Band VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status BLS6G3135-20_6G3135S-20#5 20150901 Modifications: Change notice Supersedes Product data sheet BLS6G3135-20_6G3135S-20_4 • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. BLS6G3135-20_6G3135S-20_4 20130311 Product data sheet - BLS6G3135-20_6G3135S-20_3 BLS6G3135-20_6G3135S-20_3 20090303 Product data sheet - BLS6G3135-20_6G3135S-20_2 BLS6G3135-20_6G3135S-20_2 20081217 Product data sheet - BLS6G3135-20_6G3135S-20_1 BLS6G3135-20_6G3135S-20_1 20070307 Objective data sheet - BLS6G3135-20_6G3135S-20#5 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 — 1 September 2015 - © Ampleon The Netherlands B.V. 2015. All rights reserved. 10 of 13 BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. BLS6G3135-20_6G3135S-20#5 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 11 of 13 BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon’ standard warranty and Ampleon’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own Any reference or use of any ‘NXP’ trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own trademarks. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 13. Contact information For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales BLS6G3135-20_6G3135S-20#5 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 5 — 1 September 2015 © Ampleon The Netherlands B.V. 2015. All rights reserved. 12 of 13 BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Impedance information . . . . . . . . . . . . . . . . . . . 4 Ruggedness in class-AB operation . . . . . . . . . 4 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLS6G3135-20_6G3135S-20#5