AS1333

AS1333 1 General Description The AS1333 is a step-down DC-DC converter designed to power portable applications from a single Li-Ion battery. The device also achieves high-performance in mobile phones and other applications requiring low dropout voltage. The AS1333 steps down an input voltage of 3.25V to 5.5V to a fixed output voltage of 3.09V. Fixed-frequency PWM operation minimizes RF interference. Shutdown function turns the device off and reduces battery consumption to 0.01µA (typ.). The AS1333 is available in a 8-pin WL-CSP package. A high switching frequency (2 MHz) allows use of tiny surface-mount components. Only three small external surface-mount components, an inductor and two ceramic capacitors are required. D a ta S he e t 6 5 0 m A , St e p D o w n D C / D C C o n v e r t e r f o r P o r ta b l e A p p l i c a t i o n s 2 Key Features ! ! ! ! ! PWM Switching Frequency: 2MHz Single Lithium-Ion Cell Operation Fixed Output Voltage (3.09V) Maximum load capability of 650mA High Efficiency (96% Typ at 3.6VIN, 3.09VOUT at 400mA) from internal synchronous rectification Current Overload Protection Thermal Overload Protection Soft Start Low Dropout Voltage (140 mΩ Typ PFET) 8-pin WL-CSP ! ! ! ! ! 3 Applications The AS1333 is an ideal solution for cellular phones, hand-held radios, RF PC cards, battery powered RF devices, and RFIC chipsets. Figure 1. Typical Application Circuit VIN 10 µF PVIN VDD 3.3 µH EN SW VOUT 3.09V AS1333 FB 10 µF PGND NC AGND www.austriamicrosystems.com Revision 1.02 1 - 16 AS1333 Data Sheet - P i n A s s i g n m e n t s 4 Pin Assignments Figure 2. Pin Configuration Top View SW PVIN A1 A2 A3 PGND PGND A3 Bottom View SW A2 A1 PVIN VDD B1 B3 AGND AGND B3 B1 VDD EN C1 C2 NC C3 FB FB C3 C2 NC C1 EN Pin Descriptions Table 1. Pin Descriptions Pin Name PVIN Pin Number A1 Note: for guaranteed VOUT = 3.09V set VIN = 3.25V to 5.5V; +2.7V to +5.5V Power Supply Voltage. Analog Supply Input. VDD EN NC FB AGND PGND SW B1 C1 C2 C3 B3 A3 A2 Note: for guaranteed VOUT = 3.09V set VIN = 3.25V to 5.5V; Enable Input. Set this digital input high for normal operation. For shutdown, set low. May be connected to VDD, SGND or floating. Feedback Pin. Connect to the output at the output filter capacitor. Analog and Control Ground. Power Ground. Switch Pin. Switch node connection to the internal PFET switch and NFET synchronous rectifier. Connect to an inductor with a saturation current rating that exceeds the maximum switch peak current limit specification of the AS1333. Description +2.7V to +5.5V Power Supply Voltage. Input to the internal PFET switch. www.austriamicrosystems.com Revision 1.02 2 - 16 AS1333 Data Sheet - A b s o l u t e M a x i m u m R a t i n g s 5 Absolute Maximum Ratings Stresses beyond those listed in may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in Electrical Characteristics on page 4 is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 2. Absolute Maximum Ratings Parameter VDD, PVIN to AGND PGND to AGND EN, FB, NC SW PVIN to VDD Operating Temperature Range Junction Temperature (TJ-MAX) Storage Temperature Range Maximum Lead Temperature (Soldering, 10 sec) ESD Rating Human Body Model Operating Ratings Input Voltage Range Recommended Load Current Junction Temperature (TJ) Range -40 2.7 5.5 650 +125 V mA ºC In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP = 125ºC), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the part/package in the application (θJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (θJA × PD-MAX). 2 kV HBM MIL-Std. 883E 3015.7 methods -65 Min -0.3 -0.3 Max +7.0 +0.3 Units V V V V V °C ºC ºC ºC 7.0V max Notes AGND - 0.3 VDD + 0.3 PGND - 0.3 PVIN + 0.3 -0.3 -40 +0.3 +85 +150 +150 +260 Ambient Temperature (TA) Range -40 +85 ºC www.austriamicrosystems.com Revision 1.02 3 - 16 AS1333 Data Sheet - E l e c t r i c a l C h a r a c t e r i s t i c s 6 Electrical Characteristics TA = TJ = -40ºC to +85ºC; PVIN = VDD = EN = 3.6V, unless otherwise noted. Typ. values are at TA=25°C. Table 3. Electrical Characteristics Symbol VFB ISHDN IQ RDSON(P) Parameter Feedback Voltage Shutdown supply current DC bias current into VDD Pin-Pin Resistance for PFET Conditions PVIN = 3.6V EN = SW = 0V 1 2 Min 3.028 Typ 3.09 0.01 1 140 Max 3.15 2 1.4 200 230 Units V µA mA mΩ mΩ mA MHz V FB = 0V, No Switching ISW = 200mA; TA = +25°C ISW = 200mA RDSON(N) ILIM,PFET FOSC VIH,EN VIL,EN IPIN,ENABLE Pin-Pin Resistance for NFET Switch peak current limit Internal oscillator frequency Logic high input threshold Logic low input threshold Pin pull down current ISW = -200mA; TA = +25°C ISW = -200mA Current limit is built-in, fixed, and not adjustable. 935 1.8 1.2 300 415 485 1100 2 1200 2.2 0.5 5 10 V µA 1. Shutdown current includes leakage current of PFET. 2. IQ specified here is when the part is operating at 100% duty cycle. System Characteristics TA = 25ºC; PVIN = VDD = EN = 3.6V, unless otherwise noted. The following parameters are verified by characterisation and are not production tested. Table 4. System Characteristics Symbol T_ON η Parameter Turn on time (time for output to reach 3.09V from Enable low to high transition) Efficiency (L = 3.3µH, DCR ≤ 100mΩ) Ripple voltage, PWM mode 1 Conditions EN = Low to High, VIN = 4.2V, VOUT = 3.09V, COUT = 10µF, IOUT ≤ 1mA VIN = 3.6V, VOUT = 3.09V, IOUT = 400mA VIN = 4.2V, VOUT = 3.09V, IOUT = 10mA to 400mA VIN = 600mV perturbance, over Vin range 3.4V to 5.5V TRISE = TFALL = 10µs, VOUT = 3.09V, IOUT = 100mA VIN = 4.2V, VOUT = 3.09V, transients up to 100mA, TRISE = TFALL = 10µs Min Typ 210 Max 350 Units µs 96 5 % mVp-p VOUT_ripple Line_tr Line transient response 50 mVpk Load_tr Load transient response 50 mVpk 1. Ripple voltage should measured at COUT electrode on good layout PC board and under condition using suggested inductors and capacitors. www.austriamicrosystems.com Revision 1.02 4 - 16 AS1333 Data Sheet - Ty p i c a l O p e r a t i n g C h a r a c t e r i s t i c s 7 Typical Operating Characteristics Circuit in Figure 23 on page 10, PVIN = VDD = EN = 3.6V, L = 3.3µH (LPS4018-332ML_), CIN = COUT = 10µF (GRM21BR61C106KA01) unless otherwise noted; Figure 3. Quiescent Current vs. VIN 0.55 Figure 4. Shutdown Current vs. Temperature 0.3 Vi n=3.25V Vi n=3.6V Quiescent Current (mA) Shutdown Current (µA) 0.25 0.2 0.15 0.1 0.05 0 -40 Vi n=4.2V Vi n=5.5V 0.5 0.45 0.4 - 45°C + 25°C + 85°C 0.35 2.5 3 3.5 4 4.5 5 5.5 -15 10 35 60 85 Supply Voltage (V) Figure 5. Switching Frequency Variation vs. Temp. Switching Frequency Variation (%) 4 3 Temperature (°C) Figure 6. Output Voltage vs. Supply Voltage 3.15 3.13 Output Voltage (V) Vi n=3.6V 2 1 0 -1 -2 -3 -4 -40 Vi n=4.2V Vi n=5.5V 3.11 3.09 3.07 3.05 3.03 3.25 Iout=50mA Iout=300mA Iout=650mA -15 10 35 60 85 3.75 4.25 4.75 5.25 Temperature (°C) Supply Voltage (V) www.austriamicrosystems.com Revision 1.02 5 - 16 AS1333 Data Sheet - Ty p i c a l O p e r a t i n g C h a r a c t e r i s t i c s Figure 7. Output Voltage vs. Temperature 3.15 3.13 Figure 8. Efficiency vs. Output Current 100 95 Output Voltage (V) 3.11 3.09 3.07 3.05 3.03 -40 Iout=50mA Iout=300mA Iout=650mA Efficiency (%) 90 85 80 75 70 Vi n=3.25V Vi n=3.6V Vi n=3.9V Vi n=4.2V Vi n=4.5V Vi n=5.5V -15 10 35 60 85 0 100 200 300 400 500 600 700 Temperature (°C) Output Current (mA) Figure 9. Switch Peak Current Limit vs. Temperature; closed loop 1.2 Figure 10. Load Transient Response; VOUT = 3.09V, VIN = 4.2V Peak Current Limit (A) 1.15 1.1 IL Vi n=3.6V Vi n=5.5V 1 -40 -15 10 35 60 85 IOUT Vi n=2.7V 10µs/Div Temperature (°C) Figure 11. Startup; VIN = 3.6V, VOUT = 3.09V, IOUT