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AS1334-BTDT-25

AS1334-BTDT-25

  • 厂商:

    AMSCO(​艾迈斯)

  • 封装:

  • 描述:

    AS1334-BTDT-25 - 650mA, Ultra low Ripple Step Down DC/DC Converter - austriamicrosystems AG

  • 详情介绍
  • 数据手册
  • 价格&库存
AS1334-BTDT-25 数据手册
Datasheet AS1334 6 5 0 m A , U l t r a l o w R i p p l e St e p D o w n D C / D C C o n v e r t e r 1 General Description The AS1334 is a step-down DC-DC converter designed to power portable applications from a single Li-Ion battery. The device also achieves high-performance in mobile phones and other applications requiring low dropout voltage. The AS1334 operates from an input voltage range of 2.7 to 5.5V while providing output voltages of 1.2, 1.5, 1.8, 2.5, 3.0 and 3.3V. Fixed-frequency PWM operation minimizes RF interference. Shutdown function turns the device off and reduces battery consumption to 0.01µA (typ.). The AS1334 is available in a TDFN(3x3) 8-pin package. A high switching frequency (2 MHz) allows use of tiny surface-mount components. Only three small external surface-mount components, an inductor and two ceramic capacitors are required. 2 Key Features ! ! ! ! Output Voltage Ripple: 2mV PWM Switching Frequency: 2MHz Single Lithium-Ion Cell Operation Output Voltage Range: 1.2V to 3.4V (available in 100mV steps, see Ordering Information on page 16) Fixed Output Voltages: - 1.2V, 1.5V, 1.8V, 2.5V, 3.0V, 3.3V Maximum Load Capability of 650mA 97% High Efficiency, 94% Average Efficiency Current Overload Protection Thermal Overload Protection Power-OK Soft Start Low Dropout Voltage (140 mΩ Typ PFET) TDFN(3x3) 8-pin ! ! ! ! ! ! ! ! ! 3 Applications The AS1334 is an ideal solution to supply noise sensitive applications as cellular phones, hand-held radios, RF PC cards, battery powered RF devices, RFID chipsets, A/D Converter, Sensors and OpAmps. Figure 1. AS1334 - Typical Application Circuit VIN 10 µF PVIN SW 3.3 µH VOUT VDD FB AS1334 10 µF ON OFF EN POK PGND SGND www.austriamicrosystems.com Revision 1.04 1 - 17 AS1334 Datasheet - P i n A s s i g n m e n t s 4 Pin Assignments Figure 2. Pin Configuration FB 1 POK 2 8 PGND 7 SW AS1334 EN 3 VDD 4 SGND 9 6 PVIN 5 SGND Pin Descriptions Table 1. Pin Descriptions Pin Name FB POK EN VDD SGND PVIN SW PGND Pin Number Description 1 Feedback Pin. Connect to the output at the output filter capacitor. Power-OK. 0 = VOUT < 90% of VOUTNOM. 2 1 = VOUT > 90% of VOUTNOM. Enable Input. Set this digital input high for normal operation. For shutdown, 3 set low. +2.7V to +5.5V Power Supply Voltage. Analog Supply Input. 4 Analog and Control Ground. 5, 9 6 +2.7V to +5.5V Power Supply Voltage. Input to the internal PFET switch. Switch Pin. Switch node connection to the internal PFET switch and NFET synchronous rectifier. Connect to an inductor with a saturation current rating 7 that exceeds the maximum switch peak current limit specification of the AS1334. Power Ground. 8 www.austriamicrosystems.com Revision 1.04 2 - 17 AS1334 Datasheet - A b s o l u t e M a x i m u m R a t i n g s 5 Absolute Maximum Ratings Stresses beyond those listed in Table 2 may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in Electrical Characteristics on page 4 is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 2. Absolute Maximum Ratings Parameter VDD, PVIN to SGND PGND to SGND POK, EN, FB SW PVIN to VDD Operating Temperature Range Junction Temperature (TJ-MAX) Storage Temperature Range Maximum Lead Temperature (Soldering, 10 sec) ESD Rating Human Body Model Operating Ratings Input Voltage Range Recommended Load Current Junction Temperature (TJ) Range -40 2.7 5.5 650 +125 V mA ºC In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP = 125ºC), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the part/package in the application (θJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (θJA × PD-MAX). 2 kV HBM MIL-Std. 883E 3015.7 methods -65 Min -0.3 -0.3 Max +7.0 +0.3 Units V V V V V °C ºC ºC ºC 7.0V max Notes SGND - 0.3 VDD + 0.3 PGND - 0.3 PVIN + 0.3 -0.3 -40 +0.3 +85 +150 +150 +260 Ambient Temperature (TA) Range -40 +85 ºC www.austriamicrosystems.com Revision 1.04 3 - 17 AS1334 Datasheet - E l e c t r i c a l C h a r a c t e r i s t i c s 6 Electrical Characteristics TA = TJ = -40ºC to +85ºC; PVIN = VDD = EN = 3.6V, unless otherwise noted. Typ. values are at TA=25°C. Table 3. Electrical Characteristics Symbol Parameter Conditions Min 1.176 1.47 VOUT Output Voltage PVIN = 3.6V 1.764 2.45 2.94 3.234 ISHDN IQ RDSON(P) Shutdown supply current DC bias current into VDD Pin-Pin Resistance for PFET EN = SW = 0V 1 2 Typ 1.2 1.5 1.8 2.5 3.0 3.3 0.01 1 140 Max Units 1.224 1.53 1.836 2.55 3.06 3.366 2 1.4 200 230 V V V V V V µA mA mΩ mΩ mA FB = 0V, No Switching ISW = 200mA; TA = +25°C ISW = 200mA ISW = -200mA; TA = +25°C ISW = -200mA 935 RDSON(N) ILIM,PFET VOL Pin-Pin Resistance for NFET Switch peak current limit 300 415 485 1100 1200 POK Output POK Output Low Voltage POK sinking 0.1mA 0.05 0.2 500 87 90 93 V nA % POK Output High Leakage Current POK = 3.6V POK Threshold Enable Input VIH,EN VIL,EN Logic high input threshold Logic low input threshold 5 1.2 Rising edge, referenced to VOUT(NOM) V 0.5 10 V µA IPIN,ENABLE Pin pull down current Oscillator FOSC Internal oscillator frequency 1.8 2 2.2 MHz 1. Shutdown current includes leakage current of PFET. 2. IQ specified here is when the part is operating at 100% duty cycle. System Characteristics TA = 25ºC; PVIN = VDD = EN = 3.6V, unless otherwise noted. The following parameters are verified by characterisation and are not production tested. Table 4. System Characteristics Symbol T_ON η Parameter Turn on time (from Enable low to high transition) Efficiency (L = 3.3µH, DCR ≤ 100mΩ) Conditions EN = Low to High, VIN = 4.2V, COUT = 10µF, IOUT ≤ 1mA VIN = 3.6V, IOUT = 400mA VIN = 4.2V, IOUT = 10mA to 400mA Min Typ Max 210 350 96 5 Units µs % mVp-p VOUT_ripple Ripple voltage, PWM mode1 www.austriamicrosystems.com Revision 1.04 4 - 17 AS1334 Datasheet - E l e c t r i c a l C h a r a c t e r i s t i c s Table 4. System Characteristics Symbol Line_tr Parameter Line transient response Conditions VIN = 600mV perturbance, over Vin range 3.4V to 5.5V; TRISE = TFALL = 10µs, VOUT = 3.0V, IOUT = 100mA VIN = 4.2V, VOUT = 3.0V, transients up to 100mA, TRISE = TFALL = 10µs Min Typ Max 50 Units mVpk Load_tr Load transient response 50 mVpk 1. Ripple voltage should measured at COUT electrode on good layout PC board and under condition using suggested inductors and capacitors. www.austriamicrosystems.com Revision 1.04 5 - 17 AS1334 Datasheet - Ty p i c a l O p e r a t i n g C h a r a c t e r i s t i c s 7 Typical Operating Characteristics Circuit in Figure 23 on page 11, PVIN = VDD = EN = 3.6V, L = 3.3µH (LPS4018-332ML_), CIN = COUT = 10µF (GRM21BR61C106KA01) unless otherwise noted; Figure 3. Quiescent Current vs. VIN 0.55 Figure 4. Shutdown Current vs. Temperature 0.3 Vi n=3.25V Vi n=3.6V Quiescent Current (mA) Shutdown Current (µA) 0.25 0.2 0.15 0.1 0.05 0 -40 Vi n=4.2V Vi n=5.5V 0.5 0.45 0.4 - 45°C + 25°C + 85°C 0.35 2.5 3 3.5 4 4.5 5 5.5 -15 10 35 60 85 Supply Voltage (V) Figure 5. Switching Frequency Variation vs. Temp. Switching Frequency Variation (%) 4 3 Temperature (°C) Figure 6. Output Voltage vs. Supply Voltage 3.06 3.04 Output Voltage (V) Vi n=3.6V 2 1 0 -1 -2 -3 -4 -40 Vi n=4.2V Vi n=5.5V 3.02 3 2.98 2.96 2.94 3.25 Iout=50mA Iout=300mA Iout=650mA -15 10 35 60 85 3.75 4.25 4.75 5.25 Temperature (°C) Supply Voltage (V) www.austriamicrosystems.com Revision 1.04 6 - 17 AS1334 Datasheet - Ty p i c a l O p e r a t i n g C h a r a c t e r i s t i c s Figure 7. Output Voltage vs. Temperature 3.06 3.04 Figure 8. Efficiency vs. Output Current 100 95 Output Voltage (V) Efficiency (%) 3.02 3 2.98 2.96 2.94 -40 Iout=50mA Iout=300mA Iout=650mA 90 85 80 75 70 Vi n=3.25V Vi n=3.6V Vi n=3.9V Vi n=4.2V Vi n=4.5V Vi n=5.5V -15 10 35 60 85 0 100 200 300 400 500 600 700 Temperature (°C) Output Current (mA) Figure 9. Switch Peak Current Limit vs. Temperature; closed loop 1.2 Figure 10. Load Transient Response; VOUT = 3.0V, VIN = 4.2V Peak Current Limit (A) 1.15 1.1 IL Vi n=3.6V Vi n=5.5V 1 -40 -15 10 35 60 85 IOUT Vi n=2.7V 10µs/Div Temperature (°C) Figure 11. Startup; VIN = 3.6V, VOUT = 3.0V, IOUT
AS1334-BTDT-25
物料型号: - AS1334-BTDT-12(1.2V输出) - AS1334-BTDT-15(1.5V输出) - AS1334-BTDT-18(1.8V输出) - AS1334-BTDT-25(2.5V输出) - AS1334-BTDT-30(3.0V输出) - AS1334-BTDT-33(3.3V输出)

器件简介: AS1334是一款降压型DC-DC转换器,专为从单节锂离子电池供电的便携式应用设计。该器件在移动电话和其他需要低 dropout 电压的应用中也具有高性能。AS1334的工作输入电压范围为2.7至5.5V,同时提供1.2、1.5、1.8、2.5、3.0和3.3V的输出电压。固定频率PWM操作最小化了RF干扰。关闭功能可以关闭器件,并将电池消耗降低到0.01µA(典型值)。

引脚分配: - FB(Pin 1):反馈引脚,连接到输出滤波电容的输出。 - POK(Pin 2):电源正常指示。0 = VOUT < 90% f VOUTNOM,1 = VOUT > 90% of VOUTNOM。 - EN(Pin 3):使能输入。将此数字输入设为高电平以进行正常操作。关闭时设为低电平。 - VDD(Pin 4):+2.7V至+5.5V电源电压。模拟电源输入。 - SGND(Pin 5,9):模拟和控制地。 - PVIN(Pin 6):+2.7V至+5.5V电源电压。内部PFET开关的输入。 - SW(Pin 7):开关引脚。连接到内部PFET开关和NFET同步整流器的开关节点。与一个饱和电流额定值超过AS1334的最大开关峰值电流限制规格的电感器连接。 - PGND(Pin 8):电源地。

参数特性: - 输出电压纹波:2mV - PWM开关频率:2MHz - 单锂离子电池操作 - 输出电压范围:1.2V至3.4V(以100mV步进,详见第16页的订购信息)固定输出电压:1.2V、1.5V、1.8V、2.5V、3.0V、3.3V

功能详解: AS1334基于电流模式降压架构和同步整流,以实现高效率。它允许应用在从单节锂离子电池单元的宽电压范围内以最大效率运行,并在PWM模式下提供最大650mA的负载能力。

应用信息: AS1334是为需要低纹波的噪声敏感应用提供理想解决方案,例如移动电话、手持无线电、RF PC卡、电池供电的RF设备、RFID芯片组、A/D转换器、传感器和运算放大器。
AS1334-BTDT-25 价格&库存

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