SFH 426

GaAlAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAlAs Infrared Emitter in SMT Package SFH 421 SFH 426 SFH 421 SFH 426 Wesentliche Merkmale Features • GaAIAs-LED mit sehr hohem Wirkungsgrad • Gute Linearität (Ie = f [IF]) bei hohen Strömen • Gleichstrom- (mit Modulation) oder Impulsbetrieb möglich • Hohe Zuverlässigkeit • Hohe Impulsbelastbarkeit • Oberflächenmontage geeignet • Gegurtet lieferbar • SFH 421 Gehäusegleich mit SFH 320 SFH 426 Gehäusegleich mit SFH 325 • SFH 426: Nur für IR-Reflow-Lötung geeignet. • Very highly efficient GaAIAs-LED • Good Linearity (Ie = f [IF]) at high currents • DC (with modulation) or pulsed operations are possible • High reliability • High pulse handling capability • Suitable for surface mounting (SMT) • Available on tape and reel • SFH 421 same package as SFH 320 SFH 426 same package as SFH 325 • SFH 426: Suitable only for IR-reflow soldering. Anwendungen Applications • Miniaturlichtschranken für Gleich- und Wechsellichtbetrieb, Lochstreifenleser • Industrieelektronik • „Messen/Steuern/Regeln“ • Automobiltechnik • Sensorik • Alarm- und Sicherungssysteme • IR-Freiraumübertragung • • • • • • • Typ Type Miniature photointerrupters Industrial electronics For drive and control circuits Automotive technology Sensor technology Alarm and safety equipment IR free air transmission Bestellnummer Ordering Code Gehäuse Package SFH 421 Q62702-P1055 Kathodenkennzeichnung: abgesetzte Ecke cathode marking: bevelled edge TOPLED® SFH 426 Q62702-P0331 SIDELED 2002-03-14 1 SFH 421, SFH 426 Grenzwerte (TA = 25 °C) Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg – 40 … + 100 °C Sperrspannung Reverse voltage VR 5 V Durchlaßstrom Forward current IF 100 mA Stoßstrom, τ = 10 µs, D = 0 Surge current IFSM 2.5 A Verlustleistung Power dissipation Ptot 180 mW 450 K/W ≈ 200 K/W Wärmewiderstand Sperrschicht - Umgebung bei RthJA Montage auf FR4 Platine, Padgröße je 16 mm2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 16 mm2 each Wärmewiderstand Sperrschicht - Lötstelle bei RthJS Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block 2002-03-14 2 SFH 421, SFH 426 Kennwerte (TA = 25 °C) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlänge der Strahlung Wavelength at peak emission IF = 100 mA, tp = 20 ms λpeak 880 nm Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 m A ∆λ 80 nm Abstrahlwinkel Half angle ϕ ± 60 Grad deg. Aktive Chipfläche Active chip area A 0.09 mm2 Abmessungen der aktiven Chipfläche Dimensions of the active chip area L×B L×W 0.3 × 0.3 mm Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Ω Switching times, Ιe from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 Ω tr, tf 0.5 µs Kapazität, Capacitance VR = 0 V, f = 1 MHz Co 15 pF VF VF 1.5 (≤ 1.8) 3.0 (≤ 3.8) V V Sperrstrom, Reverse current VR = 5 V IR 0.01 (≤ 1) µA Gesamtstrahlungsfluß, Total radiant flux IF = 100 mA, tp = 20 ms Φe 23 mW Temperaturkoeffizient von Ie bzw. Φe, TCI – 0.5 %/K Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA TCV –2 mV/K Temperaturkoeffizient von λ, IF = 100 mA Temperature coefficient of λ, IF = 100 mA TCλ + 0.25 nm/K Durchlaßspannung, Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 100 mA Temperature coefficient of Ie or Φe, IF = 100 mA 2002-03-14 3 SFH 421, SFH 426 Strahlstärke Ie in Achsrichtung gemessen bei einem Raumwinkel Ω = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of Ω = 0.01 sr Bezeichnung Parameter Symbol Werte Values Einheit Unit Strahlstärke Radiant intensity IF = 100 mA, tp = 20 ms Ie >4 mW/sr Strahlstärke Radiant intensity IF = 1 A, tp = 100 µs Ie typ 48 mW/sr 2002-03-14 4 SFH 421, SFH 426 Relative Spectral Emission Irel = f (λ) Ι rel Single pulse, tp = 20 µs OHR00877 100 Ιe = f (IF ) Ιe 100 mA Radiant Intensity OHR00878 10 2 OHR00883 120 Ιe % Max. Permissible Forward Current IF = f (T A ) Ι F mA Ι e (100mA) 80 10 1 60 10 0 100 80 R thjA = 450 K/W 60 10 -1 40 40 10 -2 20 10 -3 0 750 800 850 900 950 nm 1000 λ ΙF 10 1 10 2 10 3 mA 10 4 ΙF OHR00886 10 4 OHR00881 mA A 10 0 10 0 Permissible Pulse Handling Capability IF = f (tp), TA = 25 °C duty cycle D = parameter Forward Current IF = f (VF) single pulse, tp = 20 µs 10 1 20 ΙF D = 0.005 0.01 0.02 0.05 0 10 3 0.1 0.2 10 -1 0.5 10 2 DC 10 -2 D= tp T tp ΙF T 10 -3 0 1 2 3 4 5 6 V VF 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 8 10 1 s 10 2 tp Radiation Characteristics Sel = f (ϕ) 40˚ 30˚ 20˚ 10˚ 0˚ ϕ 50˚ OHL01660 1.0 0.8 0.6 60˚ 0.4 70˚ 0.2 80˚ 0 90˚ 100˚ 1.0 2002-03-14 0.8 0.6 0.4 0˚ 20˚ 40˚ 60˚ 80˚ 5 100˚ 120˚ 0 20 40 60 80 100 ˚C 120 TA SFH 421, SFH 426 Maßzeichnung Package Outlines SFH 421 2.1 (0.083) 3.0 (0.118) 2.6 (0.102) 2.3 (0.091) 1.7 (0.067) 0.1 (0.004) (typ.) 0.9 (0.035) 0.7 (0.028) Cathode marking 0.5 (0.020) 1.1 (0.043) 3.4 (0.134) 3.0 (0.118) (2.4) (0.095) 3.7 (0.146) 3.3 (0.130) 4˚±1 2.1 (0.083) 0.18 (0.007) 0.12 (0.005) 0.6 (0.024) 0.4 (0.016) GPLY6724 SFH 426 1.1 (0.043) Anode (1.4 (0.055)) (R1) 4.2 (0.165) 3.8 (0.150) 3.8 (0.150) 3.4 (0.134) (2.9 (0.114)) Cathode marking (2.85 (0.112)) 0.9 (0.035) (0.3 (0.012)) Cathode 2.54 (0.100) spacing 0.7 (0.028) 4.2 (0.165) 3.8 (0.150) 2.4 (0.094) 2.8 (0.110) (2.4 (0.094)) GPLY6880 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2002-03-14 6 SFH 421, SFH 426 Löthinweise Soldering Conditions Bauform Types TOPLED® SIDELED Tauch-, Schwall- und Schlepplötung Dip, Wave and Drag Soldering Reflowlötung Reflow Soldering Lötbadtemperatur Maximal zulässige Lötzeit Abstand Lötstelle – Gehäuse Lötzonentemperatur Maximale Durchlaufzeit Temperature of the Soldering Bath Max. Perm. Soldering Time Distance between Solder Joint and Case Temperature of Soldering Zone Max. Transit Time 260 °C 260 °C 8s 8s – – 245 °C 245 °C 10 s 10 s Zusätzliche Informationen über allgemeine Lötbedingungen erhalten Sie auf Anfrage. For additional information on general soldering conditions please contact us. Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2002-03-14 7