AF1332N

AF1332N N-Channel Enhancement Mode Power MOSFET Features - Simple Gate Drive - 2KV ESD Rating (Per MIL-STD-883D) - Small Package Outline (SOT323) Description The advanced power MOSFET provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. Product Summary BVDSS = 20V RDS (on) = 600mΩ. ID = 600mA Pin Assignments 3 (Top View) 1. G 2. S 3. D Pin Descriptions Pin No. 1 2 3 Pin Name G S D Description Gate Source Drain 1 2 Ordering information A X 1332N X X X Feature F :MOSFET PN Package U: SOT323 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel Block Diagram D S G This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Oct 15, 2004 1/5 AF1332N N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2, 3) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range TA=25ºC TA=70ºC TA=25ºC Rating 20 ±6 600 470 2.5 0.35 0.003 -55 to +150 -55 to +150 Unit V V mA A W W/oC o C o C Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-Ambient (Note 1) Max. Value 360 Unit ºC/W Electrical Characteristics at TA=25oC (unless otherwise specified) Symbol BVDSS ∆BVDSS / ∆TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (TJ=25oC) Drain-Source Leakage Current (TJ=70oC) Gate-Source Leakage Total Gate Charge (Note 3) Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-On Delay Time (Note 3) Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS=0V, ID=250uA Reference to 25oC, ID=1mA VGS=4.5V, ID=600mA VGS=2.5V, ID=400mA VDS=VGS, ID=250uA VDS=5V, ID=600mA VDS=20V, VGS=0V VDS=16V, VGS=0V VGS=±6V ID=600mA, VDS=16V, VGS=4.5V VDS=10V, ID=600mA, RG=3.3Ω, VGS=5V RD=16.7Ω VGS=0V, VDS=10V, f=1.0MHz Min. 20 0.5 Limits Typ. 0.02 1 1.3 0.3 0.5 21 53 100 125 38 17 12 Max. 600 850 1.2 1 uA 10 ±10 2 60 uA nC Unit V V/ C mΩ V S o ns pF Source-Drain Diode Symbol VDS Parameter Forward On Voltage (Note 3) Test Conditions IS=300mA, VGS=0V Min. Typ. Max. 1.2 Unit V Note 1: Surface mounted on FR4 board, t ≤ 10 sec. Note 2: Pulse width limited by Max. junction temperature. Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%. Anachip Corp. www.anachip.com.tw 2/5 Rev. 1.0 Oct 15, 2004 AF1332N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Anachip Corp. www.anachip.com.tw 3/5 Rev. 1.0 Oct 15, 2004 AF1332N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued) Fig 7. Gate Charge Characteristics Fig 8. Typical capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Anachip Corp. www.anachip.com.tw 4/5 Rev. 1.0 Oct 15, 2004 AF1332N N-Channel Enhancement Mode Power MOSFET Marking Information (Top View) SOT323 Part Number: AF1332N A~Z: Week: 27~52 or Lot No: 1~9 A~Z: Week: 01~26 or Lot No: 1~9 X X: Year: 4 years in one cycle X X: 2004, 2008, 2012... X X: 2005, 2009, 2013... X X: 2006, 2010, 2014... X X: 2007, 2011, 2015... 2 XX Package Information Package Type: SOT323 D D1 E1 E e *Dimension does not include mold protrusions. Symbol A A1 D D1 E E1 e Dimensions In Millimeters Min. 0.90 0.03 1.90 0.20 2.00 1.15 Nom. 1.00 0.07 2.00 0.30 2.10 1.25 1.30 Bsc. Max. 1.10 0.10 2.10 0.40 2.20 1.35 Dimensions In Inches Min. 0.035 0.001 0.075 0.008 0.079 0.045 Nom. 0.039 0.003 0.079 0.012 0.083 0.049 0.051 Bsc. Max. 0.043 0.004 0.083 0.016 0.087 0.053 Anachip Corp. www.anachip.com.tw 5/5 A1 Rev. 1.0 A Oct 15, 2004