AF2301PWA

AF2301P 20V P-Channel Enhancement Mode MOSFET Features - Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package Product Summary VDS = - 20V RDS (on), VGS@-4.5V, IDS@-2.8A =130mΩ. RDS (on), VGS@-2.5V, IDS@-2.0A =190mΩ. Pin Assignments 3 (Top View) 1. G 2. S 3. D Pin Descriptions Pin No. 1 2 3 Pin Name G S D Description Gate Source Drain 1 2 Ordering information AX Feature F :MOSFET PN 2301P X X X Package W: SOT23 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel Block Diagram D S G This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.1 Jul 20, 2004 1/4 AF2301P 20V P-Channel Enhancement Mode MOSFET Absolute Maximum Ratings (TA=25ºC unless otherwise noted) Symbol VDS VGS ID IDM PD TJ TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TA=25ºC TA=70ºC Operating Junction Temperature Operating Junction and Storage Temperature Range Rating -20 ±8 -2.3 -10 1.25 0.8 +150 -55 to +150 Units V V A A W ºC ºC Thermal Performance Symbol TL RθJA Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Limit 5 100 Units S ºC/W Note: Surface mounted on FR4 board t < 5 sec. Electrical Characteristics Rate ID=-2.3A, (TA=25oC unless otherwise noted) Symbol Static BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Drain-Source On-State Resistance Test Conditions VGS=0V, ID=-250uA VGS=-4.5V, ID=-2.8A VGS=-2.5V, ID=-2.0A VDS= VGS, ID=-250uA VDS=-16V, VGS=0V VGS=±8V, VDS=0V VDS=-5V, VGS=-10V VDS=-5V, ID=-2.8A VDS=-6V, ID=-2.8A, VGS=-4.5V VDD=-6V, RL=6Ω, ID=-1A, VGEN=-4.5V, RG=6Ω VDS=-6V, VGS=0V, f=1.0MHz Min. -20 -0.45 -6 Limits Typ. 95 122 6.5 5.4 0.8 1.1 5 19 95 65 447 127 80 -0.8 Max. 130 190 -1.0 ±100 10 25 60 110 80 -1.6 -1.2 Unit V mΩ V uA nA A S VGS(TH) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate Body Leakage ID(ON) On-State Drain Current gfs Forward Tranconductance Dynamic Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall-Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Source-Drain Diode IS Max. Diode Forward Current VSD Diode Forward Voltage Note: Pulse test: pulse width < 300uS, duty cycle < 2% nC nS pF IS=-1.6A, VGS=0V A V Anachip Corp. www.anachip.com.tw 2/4 Rev. 1.1 Jul 20, 2004 AF2301P 20V P-Channel Enhancement Mode MOSFET Marking Information (Top View) SOT23 XX YW XX: Device Code (See Appendix) Date code Y : Year W : W eek(A~Z) Appendix Part Number AF2301P Package SOT23-3 Device Code 01 Switching Test Circuit VDD RL VIN S VOUT VGS RGEN G OUT D Switching Waveforms ton td(on) tr 90% td(off) toff 90% tf Output, VOUT 10% 10% 90% 50% Input, VIN 10% PULSE WIDTH INVERTED 50% Anachip Corp. www.anachip.com.tw 3/4 Rev. 1.1 Jul 20, 2004 AF2301P 20V P-Channel Enhancement Mode MOSFET Package Information e D A2 A HE E b Symbol A A1 A2 b C D E e HE L Dimensions In Millimeters Min. 1.00 0.00 1.00 0.35 0.10 2.70 1.40 1.70 2.40 0.30 Nom. 1.20 1.15 0.175 2.90 1.60 2.00 2.70 Max. 1.40 0.10 1.30 0.50 0.25 3.10 1.80 2.30 3.00 0.55 A1 C L Dimensions In Inches Min. 0.039 0.000 0.039 0.014 0.004 0.106 0.055 0.067 0.094 0.012 Nom. 0.047 0.045 0.007 0.114 0.063 0.079 0.106 Max. 0.055 0.004 0.051 0.020 0.010 0.122 0.071 0.091 0.118 0.022 Anachip Corp. www.anachip.com.tw 4/4 Rev. 1.1 Jul 20, 2004