AF4362NSA

AF4362N N-Channel Enhancement Mode Power MOSFET Features - Simple Drive Requirement - Low On-resistance - Fast Switching General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Product Summary BVDSS (V) 30 RDS(ON) (mΩ) 6 ID (A) 18 Pin Assignments S S S G 1 2 3 4 8 7 6 5 Pin Descriptions D D D D Pin Name S G D Description Source Gate Drain SO-8 Ordering information AX Feature F :MOSFET PN 4362N X X X Package S: SO-8 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.1 Sep 5, 2005 1/5 AF4362N N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range TA=25ºC TA=70ºC TA=25ºC Rating 30 ±12 18 15 80 2.5 0.02 -55 to 150 -55 to 150 Units V V A A W W/ºC ºC ºC Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient (Note 1) Max. Maximum 50 Units ºC/W Electrical Characteristics at TJ=25ºC unless otherwise specified Symbol BVDSS ∆BVDSS / ∆TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Test Conditions Min. 30 Typ. 0.01 47 59 10 23 16 12 96 30 5080 660 400 Max. 5 6 8 1.2 1 uA 25 ±100 95 8100 nA nC Units V V/oC mΩ V S Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temperature Reference to 25oC, ID=1mA Coefficient VGS=10V, ID=18A Static Drain-Source VGS=4.5V, ID=12A On-Resistance (Note 3) VGS=2.5V, ID=6A Gate Threshold Voltage VDS=VGS, ID=250uA Forward Transconductance VDS=10V, ID=12A Drain-Source Leakage Current VDS=30V, VGS=0V (TJ=25oC) Drain-Source Leakage Current VDS=24V, VGS=0V (TJ=70oC) Gate-Source Leakage VGS=±12V Total Gate Charge (Note 3) ID=18A, VDS=24V, Gate-Source Charge VGS=4.5V Gate-Drain (“Miller”) Charge Turn-On Delay Time (Note 3) VDS=15V, ID=1A, Rise Time RG=3.3Ω, VGS=10V Turn-Off Delay Time RD=15Ω Fall-Time Input Capacitance VGS=0V, VDS=25V, Output Capacitance f=1.0MHz Reverse Transfer Capacitance ns pF Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage (Note 3) Reverse Recovery Time Reverse Recovery Charge 2 Test Conditions IS=18A, VGS=0V IS=18A, VGS=0V, dl/dt=100A/µs o Min. - Typ. 43 39 Max. 1.2 - Unit V ns nC Note 1: Surface mounted on 1 in copper pad of FR4 board; 125 C/W when mounted on Min. copper pad. Note 2: Pulse width limited by Max. junction temperature. Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%. Anachip Corp. www.anachip.com.tw 2/5 Rev. 1.1 Sep 5, 2005 AF4362N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Reverse Diode Anachip Corp. www.anachip.com.tw 3/5 Fig 6. Gate Threshold Voltage v.s. Junction Temperature Rev. 1.1 Sep 5, 2005 AF4362N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Anachip Corp. www.anachip.com.tw 4/5 Rev. 1.1 Sep 5, 2005 AF4362N N-Channel Enhancement Mode Power MOSFET Marking Information SO-8 ( Top View ) 8 Logo Part Number 4362 N AA Y W X 1 Lot code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Week code: "A~Z": 01~26; "A~Z": 27~52 Year code: "4" =2004 Factory code ~ Package Information Package Type: SO-8 D 8 7 6 5 E1 E 1 2 e 3 B 4 DETAIL A L θ A1 A C DETAIL A 1. All Dimensions Are in Millimeters. 2. Dimension Does Not Include Mold Protrusions. Symbol A A1 B C D E E1 L θ e Dimensions In Millimeters Min. Nom. Max. 1.35 1.55 1.75 0.10 0.18 0.25 0.33 0.41 0.51 0.19 0.22 0.25 4.80 4.90 5.00 5.80 6.15 6.50 3.80 3.90 4.00 0.38 0.71 1.27 0o 4o 8o 1.27 TYP. Anachip Corp. www.anachip.com.tw 5/5 Rev. 1.1 Sep 5, 2005