AF4512C

AF4512C P & N-Channel 30-V (D-S) MOSFET Features -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Low side high current DC-DC Converter applications General Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. Product Summary VDS (V) 30 -30 rDS(on) (mΩ) 40@VGS=4.5V 28@VGS=10V 80@VGS=-4.5V 52@VGS=-10V ID (A) 6.0 7.0 -4.0 -5.2 Pin Assignments S1 G1 S2 G2 1 2 3 4 8 7 6 5 Pin Descriptions D1 D1 D2 D2 Pin Name S1 G1 D1 S2 G2 D2 Description Source (NMOS) Gate (NMOS) Drain (NMOS) Source (PMOS) Gate (PMOS) Drain (PMOS) SOP-8 Ordering information AX Feature F :MOSFET PN 4512C X X X Package S: SOP-8 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.1 Jul 20, 2004 1/8 AF4512C P & N-Channel 30-V (D-S) MOSFET Absolute Maximum Ratings (TA=25ºC unless otherwise noted) Symbol VDS VGS ID IDM IS PD TJ, TSTG N-Channel 30 20 TA=25ºC 7 Continuous Drain Current (Note 1) TA=70ºC 5.6 Pulsed Drain Current (Note 2) 20 Continuous Source Current (Diode Conduction) (Note 1) 1.3 TA=25ºC 2.1 Power Dissipation (Note 1) 1.3 TA=70ºC Operating Junction and Storage Temperature Range Drain-Source Voltage Gate-Source Voltage Parameter P-Channel -30 -20 -5.2 -6.8 -20 -1.3 2.1 1.3 -55 to 150 Units V A A A W ºC Thermal Resistance Ratings Symbol RθJC RθJA Parameter Maximum Junction-to-Case (Note 1) Maximum Junction-to-Ambient (Note 1) t < 5 sec t < 5 sec Maximum 40 60 Units ºC/W ºC/W Note 1: surface Mounted on 1”x 1” FR4 Board. Note 2: Pulse width limited by maximum junction temperature Specifications (TA=25ºC unless otherwise noted) Symbol Static V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs Drain-Source breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current (Note 3) Drain-Source On-Resistance (Note 3) Parameter Test Conditions VGS=0V, ID=250uA VGS=0V, ID=-250uA VDS= VGS, ID=250uA VDS= VGS, ID=-250uA VGS=20V, VDS=0V VGS=-20V, VDS=0V VDS=24V, VGS=0V VDS=-24V, VGS=0V VDS=5V, VGS=10V VDS=-5V, VGS=-10V VGS=10V, ID=7A VGS=4.5V, ID=6A VGS=-10V, ID=-5A VGS=-4.5V, ID=-4A VDS=15V, ID=7A VDS=-15V, ID=-5A Ch N P N P N P N P N P N P N P Limits Min. Typ. 30 -30 1 -1.0 20 -20 1.95 -1.7 19 24 42 65 25 10 Max. 3 -3 ±100 ±100 1 -1 28 40 52 80 - Unit V V nA uA A mΩ Forward Tranconductance (Note 3) S Anachip Corp. www.anachip.com.tw 2/8 Rev. 1.1 Jul 20, 2004 AF4512C P & N-Channel 30-V (D-S) MOSFET Specifications (TA=25ºC unless otherwise noted) Symbol Dynamic Qg Qgs Qgd Switching td(on) tr td(off) tf Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time N-Channel VDD=15, VGS=10V ID=1A, RGEN=6Ω P-Channel VDD=-15, VGS=-10V ID=-1A, RGEN=6Ω N P N P N P N P 8 7 5 13 23 14 3 9 16 14 10 24 37 25 6 17 Total Gate Charge Gate-Source Charge Gate-Drain Charge N-Channel VDS=15V, VGS=10V ID=7A P-Channel VDS=-15V, VGS=-10V ID=-5A N P N P N P 10.7 10 1.7 2.2 2.1 1.7 26 13 Parameter Test Conditions Ch Limits Min. Typ. Max. Unit nC nS Note 3: Pulse test: PW < 300us duty cycle < 2%. Note 4: Guaranteed by design, not subject to production testing. Anachip Corp. www.anachip.com.tw 3/8 Rev. 1.1 Jul 20, 2004 AF4512C P & N-Channel 30-V (D-S) MOSFET Typical Performance Characteristics (N-Channel) Anachip Corp. www.anachip.com.tw 4/8 Rev. 1.1 Jul 20, 2004 AF4512C P & N-Channel 30-V (D-S) MOSFET Typical Performance Characteristics (N-Channel) (Continued) Anachip Corp. www.anachip.com.tw 5/8 Rev. 1.1 Jul 20, 2004 AF4512C P & N-Channel 30-V (D-S) MOSFET Typical Performance Characteristics (P-Channel) Anachip Corp. www.anachip.com.tw 6/8 Rev. 1.1 Jul 20, 2004 AF4512C P & N-Channel 30-V (D-S) MOSFET Typical Performance Characteristics (P-Channel) (Continued) Anachip Corp. www.anachip.com.tw 7/8 Rev. 1.1 Jul 20, 2004 AF4512C P & N-Channel 30-V (D-S) MOSFET Marking Information SOP-8L ( Top View ) 8 Logo Part Number 4512 C AA Y W X 1 Lot code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Week code: "A~Z": 01~26; "A~Z": 27~52 Year code: "4" =2004 Factory code ~ Package Information Package Type: SOP-8L E H L VIEW "A" D 7 (4X) 0.015x45 7 (4X) A2 A A1 e B y C VIEW "A" Symbol A A1 A2 B C D E e H L y θ Dimensions In Millimeters Min. Nom. Max. 1.40 1.60 1.75 0.10 0.25 1.30 1.45 1.50 0.33 0.41 0.51 0.19 0.20 0.25 4.80 3.70 5.79 0.38 O 0 5.05 3.90 1.27 5.99 0.71 5.30 4.10 6.20 1.27 0.10 O 8 Dimensions In Inches Min. Nom. Max. 0.055 0.063 0.069 0.040 0.100 0.051 0.057 0.059 0.013 0.016 0.020 0.0075 0.008 0.010 0.189 0.146 0.228 0.015 O 0 0.199 0.154 0.050 0.236 0.028 0.209 0.161 0.244 0.050 0.004 O 8 Anachip Corp. www.anachip.com.tw 8/8 Rev. 1.1 Jul 20, 2004