AF4835PSLA

AF4835P P-Channel Enhancement Mode Power MOSFET Features - Simple Drive Requirement - Low On-resistance - Fast Switching General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. ID (A) -8 Product Summary BVDSS (V) -30 RDS(ON) (mΩ) 20 Pin Assignments S S S G 1 2 3 4 8 7 6 5 Pin Descriptions D D D D Pin Name S G D Description Source Gate Drain SOP-8 Ordering information AX Feature F :MOSFET PN 4835P X X X Package S: SOP-8 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.2 Nov 19, 2004 1/6 AF4835P P-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range TA=25ºC TA=70ºC TA=25ºC Rating -30 ±20 -8 -6 -50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A W W/ºC ºC ºC Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient (Note 1) Max. Maximum 50 Units ºC/W Electrical Characteristics at TJ=25ºC unless otherwise specified Symbol BVDSS ∆BVDSS / ∆TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance (Note 3) Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (TJ=25oC) Drain-Source Leakage Current (TJ=70oC) Gate-Source Leakage Total Gate Charge (Note 3) Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-On Delay Time (Note 3) Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS=0V, ID=-250uA Reference to 25oC, ID=-1mA VGS=-10V, ID=-8A VGS=-4.5V, ID=-5A VDS=VGS, ID=-250uA VDS=-15V, ID=-8A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS=±20V ID=-4.6A, VDS=-15V, VGS=-10V VDS=-15V, ID=-1A, RG=6Ω, VGS=-10V RD=15Ω VGS=0V, VDS=-15V, f=1.0MHz Min. -30 -1 Typ. -0.037 20 36 5.5 3.5 12 8 75 40 1530 900 280 Max. 20 35 -3 -1 uA -25 ±100 nA nC Units V V/oC mΩ V S ns pF Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current (Body Diode) Forward On Voltage (Note 3) 2 Test Conditions VD=VG=0V, VS=-1.2V TJ=25 C, IS=-2.1A, VGS=0V o Min. - Typ. -0.75 Max. -2.08 -1.2 Unit A V o Note 1: Surface mounted on 1 in copper pad of FR4 board; 125 C/W when mounted on Min. copper pad. Note 2: Pulse width limited by Max. junction temperature. Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%. Anachip Corp. www.anachip.com.tw 2/6 Rev. 1.2 Nov 19, 2004 AF4835P P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Maximum Drain Current v.s. Case Temperature Fig 6. Typical Power Dissipation Anachip Corp. www.anachip.com.tw 3/6 Rev. 1.2 Nov 19, 2004 AF4835P P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature Anachip Corp. www.anachip.com.tw 4/6 Rev. 1.2 Nov 19, 2004 AF4835P P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued) Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Anachip Corp. www.anachip.com.tw 5/6 Rev. 1.2 Nov 19, 2004 AF4835P P-Channel Enhancement Mode Power MOSFET Marking Information SOP-8L ( Top View ) 8 Logo Part Number 4835 P AA Y W X 1 Lot code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Week code: "A~Z": 01~26; "A~Z": 27~52 Year code: "4" =2004 Factory code ~ Package Information Package Type: SOP-8L E H L VIEW "A" D 7 (4X) A2 A 0.015x45 7 (4X) A1 e B y C VIEW "A" Symbol A A1 A2 B C D E e H L y θ Dimensions In Millimeters Min. Nom. Max. 1.40 1.60 1.75 0.10 0.25 1.30 1.45 1.50 0.33 0.41 0.51 0.19 0.20 0.25 4.80 3.70 5.79 0.38 0O 5.05 3.90 1.27 5.99 0.71 5.30 4.10 6.20 1.27 0.10 8O Dimensions In Inches Min. Nom. Max. 0.055 0.063 0.069 0.040 0.100 0.051 0.057 0.059 0.013 0.016 0.020 0.0075 0.008 0.010 0.189 0.146 0.228 0.015 0O 0.199 0.154 0.050 0.236 0.028 0.209 0.161 0.244 0.050 0.004 8O Anachip Corp. www.anachip.com.tw 6/6 Rev. 1.2 Nov 19, 2004