AF6930NSA

AF6930N N-Channel Enhancement Mode Power MOSFET Features - DC-DC Application - Surface Mount Package - Dual N-channel Device General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Product Summary BVDSS (V) 30 RDS(ON) (mΩ) 50 ID (A) 5 Pin Assignments Pin Descriptions S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Pin Name Description S1/2 G1/2 D1/2 Source Gate Drain SO-8 Ordering information AX Feature F :MOSFET PN 6930N X X X Package S: SO-8 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.2 Sep 5, 2005 1/5 AF6930N N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range TA=25ºC TA=70ºC TA=25ºC ID IDM PD TSTG TJ Rating 30 ±20 5 4 20 2 0.016 -55 to 150 -55 to 150 Units V V A A W W/ºC ºC ºC Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient (Note 1) Max. Maximum 62.5 Units ºC/W Electrical Characteristics at TJ=25ºC unless otherwise specified Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ∆BVDSS / ∆TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance (Note 3) Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (TJ=25oC) Drain-Source Leakage Current (TJ=70oC) Gate-Source Leakage Total Gate Charge (Note 3) Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-On Delay Time (Note 3) Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0V, ID=250uA Reference to 25oC, ID=1mA VGS=10V, ID=5A VGS=4.5V, ID=3.9A VDS=VGS, ID=250uA VDS=15V, ID=5A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=±20V ID=5A, VDS=15V, VGS=5V VDS=15V, ID=1.5A, RG=3.3Ω, VGS=10V RD=10Ω VGS=0V, VDS=25V, f=1.0MHz 30 1 - 0.037 6 6.1 1.4 3.3 6.7 6.4 22.1 2.1 240 145 55 50 80 3 1 V V/oC mΩ V S uA 25 ±100 nA nC ns pF Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current (Body Diode) Test Conditions Min. Typ. Max. Unit VD=VG=0V, VS=1.2V TJ=25ºC, IS=1.7A, VGS=0V o - - 1.67 1.2 V V Forward On Voltage (Note 3) 2 Note 1: Surface mounted on 1 in copper pad of FR4 board; 135 C/W when mounted on Min. copper pad. Note 2: Pulse width limited by Max. junction temperature. Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%. Anachip Corp. www.anachip.com.tw 2/5 Rev. 1.2 Sep 5, 2005 AF6930N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics Anachip Corp. www.anachip.com.tw 3/5 Rev. 1.2 Sep 5, 2005 AF6930N N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued) Anachip Corp. www.anachip.com.tw 4/5 Rev. 1.2 Sep 5, 2005 AF6930N N-Channel Enhancement Mode Power MOSFET Marking Information SO-8 ( Top View ) 8 Logo Part Number 6930N AA Y W X 1 Lot code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Week code: "A~Z": 01~26; "A~Z": 27~52 Year code: "4" =2004 Factory code ~ Package Information Package Type: SO-8 D 8 7 6 5 E1 E 1 2 e 3 B 4 DETAIL A L θ A1 A C DETAIL A 1. All Dimensions Are in Millimeters. 2. Dimension Does Not Include Mold Protrusions. Symbol A A1 B C D E E1 L θ e Dimensions In Millimeters Min. Nom. Max. 1.35 1.55 1.75 0.10 0.18 0.25 0.33 0.41 0.51 0.19 0.22 0.25 4.80 4.90 5.00 5.80 6.15 6.50 3.80 3.90 4.00 0.38 0.71 1.27 0o 4o 8o 1.27 TYP. Anachip Corp. www.anachip.com.tw 5/5 Rev. 1.2 Sep 5, 2005