AF8510C

AF8510C N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Features - Lower On-Resistance - Simple Drive Requirement - Fast Switching Performance - Pb Free Plating Product General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applicat ions such as DC/DC converters. Product Summary CH N P BVDSS (V) 30 -30 RDS(ON) (mΩ) 28 55 ID (A) 6.9 -5.3 Pin Assignments Pin Descriptions Pin Name S1 G1 D1 S2 G2 D2 Description Source (NMOS) Gate (NMOS) Drain (NMOS) Source (PMOS) Gate (PMOS) Drain (PMOS) S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 SO-8 Ordering information AX Feature F :MOSFET PN 8510C X X Package S: SOP-8 Packing Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Nov 14, 2005 1/8 AF8510C N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Absolute Maximum Ratings Symbol VDS VGS ID IDM PD TJ, TSTG N-Channel P-Channel 30 -30 ±20 ±20 TA=25ºC 6.9 -5.3 Continuous Drain Current (Note 1) 5.5 -4.2 TA=70ºC Pulsed Drain Current (Note 2) 30 -30 Total Power Dissipation TA=25ºC 2.0 Linear Deratomg Factor 0.016 Operating Junction and Storage Temperature Range -55 to 150 Drain-Source Voltage Gate-Source Voltage Parameter Units V V A W W/ ºC ºC Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient (Note 1) Max. Maximum 62.5 Units ºC/W N-CH Electrical Characteristics at TJ=25ºC unless otherwise specified Symbol BVDSS 　BVDSS / TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance (Note 3) Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (TJ=25oC) Drain-Source Leakage Current (TJ=70oC) Gate-Source Leakage Total Gate Charge (Note 3) Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-On Delay Time (Note 3) Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS=0V, ID=250uA Reference to 25oC, ID=1mA VGS=10V, ID=5A VGS=4.5V, ID=3A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=±20V ID=6.9A, VDS=24V, VGS=4.5V VDS=15V, ID=1A, RG=3.3Ω, VGS=10V RD=15Ω VGS=0V, VDS=25V, f=1.0MHz Min. 30 1 Typ. 0.02 4.6 10 2 6 8 7 20 6 540 160 120 Max. 28 40 3 1 uA 25 ±100 16 870 nA nC Units V V/ C mΩ V S o ns pF Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage (Note 3) Reverse Recovery Time Reverse Recovery Charge Test Conditions IS=1.7A, VGS=0V IS=6.9A, VGS=0V dl/dt=100A/µs Min. Typ. 20 11 Max. 1.2 Unit V ns nC Anachip Corp. www.anachip.com.tw 2/8 Rev. 1.0 Nov 14, 2005 AF8510C N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET P-CH Electrical Characteristics at TJ=25ºC unless otherwise specified Symbol BVDSS 　BVDSS / 　TJ Parameter Test Conditions Min. -30 1 Typ. -0.023 4.9 9 2 6 10 8 25 13 580 180 120 Max. 55 90 -3 -1 uA -25 ±100 15 930 nA nC Units V V/oC mΩ V S Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temperature Reference to 25oC, ID=1mA Coefficient VGS=-10V, ID=-5A VGS=-4.5V, ID=-3A Gate Threshold Voltage VDS=VGS, ID=-250uA Forward Transconductance VDS=-10V, ID=-5A Drain-Source Leakage Current VDS=-30V, VGS=0V (TJ=25oC) Drain-Source Leakage Current VDS=-24V, VGS=0V (TJ=70oC) Gate-Source Leakage VGS=±20V Total Gate Charge (Note 3) ID=-5.3A, VDS=-24V, Gate-Source Charge VGS=-4.5V Gate-Drain (“Miller”) Charge Turn-On Delay Time (Note 3) VDS=-15V, ID=1A, Rise Time RG=3.3Ω, VGS=-10V Turn-Off Delay Time RD=15Ω Fall-Time Input Capacitance VGS=0V, VDS=25V, Output Capacitance f=1.0MHz Reverse Transfer Capacitance VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss ns pF Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage (Note 3) Reverse Recovery Time) Reverse Recovery Charge 2 Test Conditions IS=1.7A, VGS=0V IS=-5.3A, VGS=0V, dl/dt=100A/µs o Min. - Typ. 21 17 Max. -1.2 - Unit V ns nC Note 1: Surface mounted on 1 in copper pad of FR4 board; 135 C/W when mounted on Min. copper pad. Note 2: Pulse width limited by Max. junction temperature. Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%. Anachip Corp. www.anachip.com.tw 3/8 Rev. 1.0 Nov 14, 2005 AF8510C N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Typical Performance Characteristics (N-Channel) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Anachip Corp. www.anachip.com.tw 4/8 Rev. 1.0 Nov 14, 2005 AF8510C N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Typical Performance Characteristics (N-Channel) (Continued) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operation Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Anachip Corp. www.anachip.com.tw 5/8 Rev. 1.0 Nov 14, 2005 AF8510C N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Typical Performance Characteristics (P-Channel) (Continued) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Anachip Corp. www.anachip.com.tw 6/8 Rev. 1.0 Nov 14, 2005 AF8510C N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Typical Performance Characteristics (P-Channel) (Continued) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operation Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Anachip Corp. www.anachip.com.tw 7/8 Rev. 1.0 Nov 14, 2005 AF8510C N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Marking Information SO-8L ( Top View ) 8 Logo Part Number 8510C AA Y W 1 Week code: "A~Z": 01~26; "A~Z": 27~52 Year code: "4" =2004 Factory code ~ Package Information Package Type: SO-8L H E L V IE W "A " 7 (4X ) D 0.0 15x45 7 (4X ) A2 A A1 e B y C VI EW "A" Symbol A A1 A2 B C D E e H L y 　 Dimensions In Millimeters Min. Nom. Max. 1.40 1.60 1.75 0.10 0.25 1.30 1.45 1.50 0.33 0.41 0.51 0.19 0.20 0.25 4.80 5.05 5.30 3.70 3.90 4.10 1.27 5.79 5.99 6.20 0.38 0.71 1.27 0.10 0O 8O Dimensions In Inches Min. Nom. Max. 0.055 0.063 0.069 0.040 0.100 0.051 0.057 0.059 0.013 0.016 0.020 0.0075 0.008 0.010 0.189 0.199 0.209 0.146 0.154 0.161 0.050 0.228 0.236 0.244 0.015 0.028 0.050 0.004 0O 8O Anachip Corp. www.anachip.com.tw 8/8 Rev. 1.0 Nov 14, 2005