AF9412NS

AF9412N N-Channel 30-V (D-S) MOSFET Features -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Low side high current DC-DC Converter applications General Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for using in the power management circuitry. Typical applications are PWM DC-DC converters, power management in portable and battery-powered products such as computers, printers, battery chargers, telecommunication power systems, and telephone power systems. Product Summary VDS (V) 30 rDS(on) (mΩ) 22@VGS=10V 36@VGS=4.5V ID (A) 9.0 7.0 Pin Assignments Pin Descriptions Pin Name S G D Description Source Gate Drain S S S G 1 2 3 4 8 7 6 5 D D D D SOP-8 Ordering information AX Feature F :MOSFET PN 9412N X X X Package S: SOP-8 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Oct 15, 2004 1/5 AF9412N N-Channel 30-V (D-S) MOSFET Absolute Maximum Ratings (TA=25ºC unless otherwise noted) Symbol VDS VGS ID IDM IS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) TA=25ºC TA=70ºC Pulsed Drain Current (Note 2) Continuous Source Current (Diode Conduction) (Note 1) TA=25ºC Power Dissipation (Note 1) TA=70ºC Operating Junction and Storage Temperature Range Rating 30 ±20 9.4 7.4 30 1.6 3.1 2.2 -55 to 150 Units V V A A A W ºC Thermal Resistance Ratings Symbol RθJC RθJA Parameter Maximum Junction-to-Case (Note 1) Maximum Junction-to-Ambient (Note 1) t ≤ 5 sec t ≤ 5 sec Maximum 25 40 Units ºC/W Note 1: surface Mounted on 1”x 1” FR4 Board. Note 2: Pulse width limited by maximum junction temperature Specifications (TA=25ºC unless otherwise noted) Symbol Parameter Test Conditions Min. 30 1 20 Limits Typ. 1.95 17 29 20 40 0.7 4.7 1.7 1.4 16 5 23 3 41 Max. 3.0 ±100 1 25 22 36 27 1.1 8 21 10 37 6 80 Unit V V nA uA A mΩ S V Static V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA VGS(th) Gate-Threshold Voltage VDS=VGS, ID=250uA IGSS Gate-Body Leakage VDS=0V, VGS=20V VDS=24V, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V, TJ=55ºC ID(on) On-State Drain Current (Note 3) VDS=5V, VGS=10V VGS=10V, ID=9.2A rDS(on) Drain-Source On-Resistance VGS=4.5V, ID=8A (Note 3) VGS=10V, ID=9.2A, TJ=55ºC Forward Transconductance g V =15V, I =9.2A fs (Note 3) DS D VSD Diode Forward Voltage Dynamic (Note 4) Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Switching td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall-Time Source-Drain Reverse Recovery trr Time IS=2.3A, VGS=0V VDS=15V, VGS=4.5V, ID=7A nC VDD=25V, RL=25Ω, ID=1A, VGEN=10V IF=2.3A, Di/Dt=100A/uS nS nS Note 3: Pulse test: PW ≤ 300us duty cycle ≤ 2%. Note 4: Guaranteed by design, not subject to production testing. Anachip Corp. www.anachip.com.tw 2/5 Rev. 1.0 Oct 15, 2004 AF9412N N-Channel 30-V (D-S) MOSFET Typical Performance Characteristics Anachip Corp. www.anachip.com.tw 3/5 Rev. 1.0 Oct 15, 2004 AF9412N N-Channel 30-V (D-S) MOSFET Typical Performance Characteristics (Continued) Anachip Corp. www.anachip.com.tw 4/5 Rev. 1.0 Oct 15, 2004 AF9412N N-Channel 30-V (D-S) MOSFET Marking Information SOP-8L ( Top View ) 8 Logo Part Number 9412N AA Y W X 1 Lot code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Week code: "A~Z": 01~26; "A~Z": 27~52 Year code: "4" =2004 Factory code ~ Package Information Package Type: SOP-8L E H L VIEW "A" D 7 (4X) A2 A 0.015x45 7 (4X) A1 e B y C VIEW "A" Symbol A A1 A2 B C D E e H L y θ Dimensions In Millimeters Min. Nom. Max. 1.40 1.60 1.75 0.10 0.25 1.30 1.45 1.50 0.33 0.41 0.51 0.19 0.20 0.25 4.80 5.05 5.30 3.70 3.90 4.10 1.27 5.79 5.99 6.20 0.38 0.71 1.27 0.10 8O 0O Dimensions In Inches Min. Nom. Max. 0.055 0.063 0.069 0.040 0.100 0.051 0.057 0.059 0.013 0.016 0.020 0.0075 0.008 0.010 0.189 0.199 0.209 0.146 0.154 0.161 0.050 0.228 0.236 0.244 0.015 0.028 0.050 0.004 0O 8O Anachip Corp. www.anachip.com.tw 5/5 Rev. 1.0 Oct 15, 2004