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AM93LC86ISA

AM93LC86ISA

  • 厂商:

    ANACHIP

  • 封装:

  • 描述:

    AM93LC86ISA - 16384-bits Serial Electrically Erasable PROM - Anachip Corp

  • 数据手册
  • 价格&库存
AM93LC86ISA 数据手册
AM93LC86 16384-bits Serial Electrically Erasable PROM Features • State-of-the-art architecture - Non-volatile data storage - Standard voltage and low voltage operation Vcc: 2.7V ~ 5.5V - Full TTL compatible inputs and outputs - Auto increment read for efficient data dump • Hardware and software write protection - Software instructions for write-enable/disable - VCC level verification before self-timed programming cycle • Versatile, easy-to-use interface - Self-timed programming cycle - Automatic erase-before-write - Programming status indicator - Word and chip erasable - Stop SK anytime for power savings • Durability and reliability - 40 years data retention - Minimum of 1M write cycles per word - Unlimited read cycles - ESD protection (Preliminary) General Description The AM93LC86 is the 16384-bit non-volatile serial EEPROM. The AM93LC86 provides efficient non-volatile read/write memory arranged as 1024 words of 16 bits each when the ORG Pin is connected to VCC and 2048 words of 8 bits each when it is tied to ground. The instruction set includes read, write, and write enable/disable functions. The data out pin (DO) indicates the status of the device during the self-timed non-volatile programming cycle. The self-timed write cycle includes an automatic erase-before-write capability. Only when the chip is in the write enable state and proper Vcc operation range is the write instruction accepted and thus to protect against inadvertent writes. Data is written in 16 bits per write instruction into the selected register. If chip select (CS) is brought high after initiation of the write cycle, the data output (DO) pin will indicate the read/busy status of the chip. The AM93LC86 is available in space-saving 8-lead PDIP, SOP and TSSOP packages. Pin Assignments CS SK DI DO 1 2 3 4 8 7 6 5 Pin Descriptions (note) 1 2 3 4 8 7 6 5 VCC WP ORG GND CS SK DI DO VCC WP ORG GND PDIP Package CS SK DI DO 1 2 3 4 8 7 6 5 SOP Package VCC WP ORG GND Name CS SK DI DO GND VCC WP ORG Description Chip select Serial clock Data input Data output Ground Power supply Write protection (active low) Organization Note: See pin descriptions (continued) for more details TSSOP Package Ordering Information AM93 LC 86 X X X Operating Voltage LC : 2.7V~5.5V,CMOS Type 86: 16K Temp. grade o o Blank : 0 Co~ +70 Co I : − 40 C ~ +85 C Package S : SOP-8L N : PDIP-8L TS: TSSOP-8L Packing Blank : Tube A : Taping This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev 0.1 Oct 20, 2003 1/12 AM93LC86 16384-bits Serial Electrically Erasable PROM Block Diagram (Preliminary) Data register Dummy bit DO DI Instruction register (13/14 bits) R/W AMPS CS Instruction decode control and clock generation Address register Decoder EEPROM array (1024 X 16) or (2048 X 8) VCC SK VCC range detector WP Write enable High voltage generator GND ORG Absolute Maximum Ratings Symbol TSTG VCC TOP Parameter Storage temperature Voltage with respect to ground Temperature under bias Rating -65 to +125 -0.3 to + 6.5 0 to + 70 Unit °C V °C Note: These are stress rating only. Appropriate conditions for operating these devices given elsewhere may permanently damage the part. Prolonged exposure to maximum ratings may affect device reliability. Anachip Corp. www.anachip.com.tw 2/12 Rev 0.1 Oct 20, 2003 AM93LC86 16384-bits Serial Electrically Erasable PROM (Preliminary) DC Electrical Characteristics (Vcc =2.7~5.5V, TA = 25oC, unless otherwise noted) Symbol ICC ISB IIL IOL VIL VIH VOL1 VOH1 VOL2 VOL2 Parameter Operating current** Standby current Input leakage Output leakage Input low voltage** Input high voltage** Output low voltage Output high voltage Output low voltage Output high voltage Conditions CS=VIH, SK=1MHz CMOS input levels CS=DI=SK=0V VIN = 0V to VCC(CS,SK,DI) VOUT = 0V to VCC, CS=0V VCC = 3V + 10% VCC = 5V + 10% VCC = 3V + 10% VCC = 5V + 10% IOL = 2.1mA TTL, VCC=5V + 10% IOH = -400uA TTL, VCC=5V + 10% IOL = 10uA CMOS IOH = -10uA CMOS Min Max 3 10 1 1 0.15 VCC 0.8 VCC +0.2 VCC+0.2 0.4 0.2 VCC -0.2 Unit mA µA µA µA V V V V V V -1 -1 -0.1 -0.1 0.8 VCC 2 2.4 Note ** : ICC, VIL min and VIH max are for reference only and are not tested. AC Electrical Characteristics (Vcc = 2.7V ~ 5.5V, TA = 25oC, unless otherwise noted) Symbol FSK TSKH TSKL TCS TCSS TDIS TCSH TDIH TPD1 TPD0 TSV TDF TWP Endurance(note) Parameter SK Clock Frequency SK High Time SK Low Time Minimum CS Low Time CS Setup Time DI Setup Time CS Hold Time DI Hold Time Output Delay to "1" Output Delay to "0" CS to Status Valid CS to DO in 3-state Write Cycle Time 5V, 25ºC Conditions Min 0 250 250 250 50 100 0 100 Max 1 Unit Mhz nS nS nS nS nS nS nS nS nS nS nS mS write cycles Relative to SK Relative to SK Relative to SK Relative to SK AC test (Fig. 1) AC test (Fig. 1) AC test CL = 100pF CS = VIL 500 500 500 100 10 1M Note: The parameter is characterized and isn’t 100% tested. 1.247V (1 TTL Gate Load) 632 ohm DO 100PF Figure 1. AC test circuit Anachip Corp. www.anachip.com.tw 3/12 Rev 0.1 Oct 20, 2003 AM93LC86 16384-bits Serial Electrically Erasable PROM Pin Capacitance (note) (TA=25°C, F=1Mhz ) Symbol COUT CIN Parameter Output capacitance Input capacitance Max 5 5 Unit pF pF (Preliminary) Note: The parameter is characterized and isn’t 100% tested. Instruction Set Instruction READ EWEN WRITE WRAL EWDS ERASE ERAL Note: READ: Read EWEN: Erase/write enable WRITE: Write WRAL: Write all (note) Start bit 1 1 1 1 1 1 1 Op code 10 00 01 00 00 11 00 Address X8 X16 A10 ~ A0 A9 ~ A0 11XXXXXXXXX 11XXXXXXXX A10 ~ A0 A9 ~ A0 01XXXXXXXXX 01XXXXXXXX 00XXXXXXXXX 00XXXXXXXX A10 ~ A0 A9 ~ A0 10XXXXXXXXX 10XXXXXXXX Input data ×8 × 16 D7 – D0 D15 - D0 D7 – D0 D15 - D0 - EWDS: Erase/write disable ERASE: Erase ERAL: Erase all Functional Description Endurance and data retention The AM93LC86 is designed for applications requiring up to 1M programming cycles (WRITE, WRAL, EARSE and ERAL). It provides 40 years of secure data retention. Device operation The AM93LC86 is controlled by seven 13-bit instructions. Instructions are clocked in (serially) on the DI pin. Each instruction begins with a logical "1" (the start bit). This is followed by the opcode (2 bits), the address field (10/11 bits), and data, if appropriated,. The clock signal (SK) may be halted at any time and the AM93LC86 will remain in its last state. This allows full static flexibility and maximum power conservation. Auto increment read operations Sequential read is possible, since the AM93LC86 has been designed to output a continuous stream of memory content in response to a single read operation instruction. To utilize this function, the system asserts a read instruction specifying a start location address. Once the 8-bit or 16-bit of the addressed word have been clocked out, the data in consecutively higher address locations is output. The address will wrap around continuously with CS high until the chip select (CS) control pin is brought low. This allows for single instruction data dumps to be executed with a minimum of firmware overhead. Read (READ) The READ instruction is the only instruction that outputs serial data on the DO pin. After the read instruction and address have been decoded, data is transferred from the selected memory register into a 8-bit or 16-bit serial shift register. (Please note that one logical "0" bit precedes the actual 8-bit or 16-bit output data string.) The output on DO changes during the rising edge transitions of SK. (shown in figure 3) Anachip Corp. www.anachip.com.tw 4/12 Rev 0.1 Oct 20, 2003 AM93LC86 16384-bits Serial Electrically Erasable PROM Functional Description Erase/write enable (EWEN) Before any device programming (WRITE, WRAL, ERASE, and ERAL) can be done, the EWEN instruction must be executed first. When Vcc is applied, this device powers up in the EWDS state. The device then remains in a erase/write disable (EWDS) state until a EWEN instruction is executed. Thereafter the device remains enabled until a EWDS instruction is executed or until Vcc is removed. (shown in Figure 4) Note: Neither the EWEN nor the EWDS instruction has any effect on the READ instruction. Erase/write disable (EWDS) The erase/write disable (EWDS) instruction disables all programming capabilities. This protects the entire part against accidental modification of data until a EWEN instruction is executed. (When Vcc is applied, this part powers up in the EWDS state.) To protect data, a EWDS instruction should be executed upon completion of each programming operation. Note: Neither the EWEN nor the EWDS instruction has any effect on the READ instruction. (shown in figure 5) (Preliminary) Before a WRITE instruction can be executed, the device must be in the Write enable (WEN) state. Write all (WRAL) The Write All (WRAL) instruction programs all registers with the data pattern specified in the instruction. While the WRAL instruction is being loaded, the address field becomes a sequence of DON'T-CARE bits. (Shown in Figure 7) As with the WRITE instruction, if CS is brought HIGH after a minimum wait of 250ns (tcs), the DO pin indicates the READY/BUSY status of the chip. (shown in figure 7) Erase (ERASE) After the erase instruction is entered, CS must be brought LOW. The falling edge of CS initiates the self-timed internal programming cycle. Bringing CS HIGH after minimum of tcs, will cause DO to indicate the READ/BUSY status of the chip. To explain this, a logical "0" indicates the programming is still in progress while a logical "1" indicates the erase cycle is complete and the part is ready for another instruction. (shown in figure 8) Erase all (ERAL) Full chip erase is provided for ease of programming. Erasing the entire chip involves setting all bits in the entire memory array to a logical "1". (shown in figure 9) Write (WRITE) The WRITE instruction includes 8-bit or 16-bit of data to be written into the specified register. After the last data bit has been applied to DI, and before the next rising edge of SK, CS must be brought low. The falling edge of CS initiates the self-timed programming cycle. After a minimum wait of 250ns (5V operation) from the falling edge of CS (tcs), DO will indicate the READY/BUSY status of the chip if CS is brought HIGH. This means that logical "0" implies the programming is still in progress while logical "1" indicates the selected register has been written, and the part is ready for another instruction. (shown in figure 6) Note: The combination of CS HIGH, DI HIGH and the rising edge of the SK clock, resets the READY/BUSY flag. Therefore, it is important if you want to access the READY/BUSY flag, not to reset it through this combination of control signals. Anachip Corp. www.anachip.com.tw 5/12 Rev 0.1 Oct 20, 2003 AM93LC86 16384-bits Serial Electrically Erasable PROM Timing Diagrams Organization Key I/O AN DN AM93LC86 (16K) X8 A10 D7 X16 A9 D15 (Preliminary) T CS tCSS SK tSKH tSKL tCSH tDIS DI tDIH tPDO DO(READ) tPD1 tDF tSV DO(WRITE) (WRALL) (ERASE) (ERALL) STATUS VALID tDF Figure 2. Synchronous data timing tCS CS + SK DI 1 1 0 AN AO DO TRI-STATE O DN * DO +For all instructions, SK cycles before start bit don't care. *Address Pointer Cycle to the Next Register. Figure 3. Data read cycle timing Anachip Corp. www.anachip.com.tw 6/12 Rev 0.1 Oct 20, 2003 AM93LC86 16384-bits Serial Electrically Erasable PROM (Preliminary) tCS CS SK ** DI DO = TRI-STATE **AN-2~A0 don't care. 1 0 0 1 1 X- - - - - - - - - - - X FIigure 4. Erase/write enable(WEN) cycle timing tCS CS SK ** DI 1 0 0 0 0 X- - - - -- - - - X DO = TRI-STATE **AN-2~A0 don't care. Figure 5. Erase/write disable(EWDS) cycle timing tCS CS SK DI 1 0 1 AN AO DN DO tSV tDF DO TRI-STATE BUSY READY tWP Figure 6. Write(WRITE) cycle timing Anachip Corp. www.anachip.com.tw 7/12 Rev 0.1 Oct 20, 2003 AM93LC86 16384-bits Serial Electrically Erasable PROM tCS CS (Preliminary) SK ** 1 DI 0 0 0 1 X- - - - - - - - - - - -X DN DO tSV DO TRI-STATE **AN-2~A0 don't care. BUSY tWP READY Figure 7. Write all(WRAL) cycle timing tCS CS SK DI 1 1 1 AN AO tSV tDF READY TRI-STATE DO BUSY tWP Figure 8. Erase(ERASE) cycle timing tCS CS SK ** 1 DI 0 0 1 0 X- - - - - - - - - X tSV TRI-STATE tDF READY DO BUSY tWP **AN-2~A0 don't care. Figure 9. Erase all(ERAL) cycle timing Anachip Corp. www.anachip.com.tw 8/12 Rev 0.1 Oct 20, 2003 AM93LC86 16384-bits Serial Electrically Erasable PROM Pin Description (Continued) Chip select (CS) A high level selects the device. A low level deselects the device an forces it into standby mode. However, a programming cycle which is already initiated will be completed, regardless of the CS input signal. If CS is brought low during a program cycle, the device will go into standby mode as soon as the programming cycle is completed. Serial clock (SK) The serial clock is used to synchronize the communication between a master device and the AM93LC86. Opcode, address, and data bits are clocked in on the positive edge of SK. Data bits are also clocked out on the positive edge of SK. SK can be stopped anywhere in the transmission sequence (at high or low level) and can be continued anytime with respect to clock high time (TCKH) and clock low time (TCKL). This gives the controlling master freedom in preparing opcode, address, and data. SK is a “don’t care” if CS is low (device deselected). If CS is high, but START condition has not been detected, any number of clock cycles can be recevived by the device without changing its status (i.e., waiting for START condition). SK cycles are not required during the self-timed WRITE (i.e., auto ERASE/WRITE) cycles. After detection of a start condition the specified number of clock cycles (respectively low to high transitions of SK) must be provided. These clock cycles are required to clock in all opcode, address, and data bits before an instruction is executed (see the table of instruction set). SK and DI then become don’t care inputs waiting for a new start condition to be detected. Note: CS must go low between consecutive instructions, except when performing a sequential read. Data input (DI) Data input is used to clock in a start bit, opcode, address, and data synchronously with the CLK input. Data output (DO) Data output is used in the READ mode to output data synchronously with the CLK input( TPD after the positive edge of CLK) Write protection ( WP ) This pin allows the user to enable or disable the ability to write data to the memory array. If the WP pin is floated or tied to VCC, the device can be programmed. If the WP pin is tied to GND, programming will be inhibited. There is an internal pull-up on this device that enables programming if this pin is left floating. Organization (ORG) When ORG is connected to VCC, the X16 memory organization is selected. When ORG is tied to GND, the X8 memory organization is selected. There is an internal pull-up resistor on the ORG pin that will select X16 organization when left unconnected. (Preliminary) Anachip Corp. www.anachip.com.tw 9/12 Rev 0.1 Oct 20, 2003 AM93LC86 16384-bits Serial Electrically Erasable PROM Package Information (1) Package Type: PDIP-8L (Preliminary) D E-PIN O0.118 inch E1 E 15 (4X) PIN #1 INDENT O0.025 DEEP 0.006-0.008 inch 7 (4X) eB A2 A C L B S e B1 B2 Symbol A A1 A2 B B1 B2 C D E E1 e L eB S Dimensions in millimeters Min. Nom. Max. 5.33 0.38 3.1 3.30 3.5 0.36 0.46 0.56 1.4 1.52 1.65 0.81 0.99 1.14 0.20 0.25 0.36 9.02 9.27 9.53 7.62 7.94 8.26 6.15 6.35 6.55 2.54 2.92 3.3 3.81 8.38 8.89 9.40 0.71 0.84 0.97 A1 Dimensions in inches Min. Nom. Max. 0.210 0.015 0.122 0.130 0.138 0.014 0.018 0.022 0.055 0.060 0.065 0.032 0.039 0.045 0.008 0.010 0.014 0.355 0.365 0.375 0.300 0.313 0.325 0.242 0.250 0.258 0.100 0.115 0.130 0.150 0.330 0.350 0.370 0.028 0.033 0.038 Anachip Corp. www.anachip.com.tw 10/12 Rev 0.1 Oct 20, 2003 AM93LC86 16384-bits Serial Electrically Erasable PROM (2) Package Type: SOP-8L (Preliminary) E H L VIEW "A" D 7 (4X) A2 A 0.015x45 7 (4X) A1 e B y C VIEW "A" Symbol A A1 A2 B C D E e H L y θ Dimensions In Millimeters Min. Nom. Max. 1.40 1.60 1.75 0.10 0.25 1.30 1.45 1.50 0.33 0.41 0.51 0.19 0.20 0.25 4.80 5.05 5.30 3.70 3.90 4.10 1.27 5.79 5.99 6.20 0.38 0.71 1.27 0.10 8O 0O Dimensions In Inches Min. Nom. Max. 0.055 0.063 0.069 0.040 0.100 0.051 0.057 0.059 0.013 0.016 0.020 0.0075 0.008 0.010 0.189 0.199 0.209 0.146 0.154 0.161 0.050 0.228 0.236 0.244 0.015 0.028 0.050 0.004 0O 8O Anachip Corp. www.anachip.com.tw 11/12 Rev 0.1 Oct 20, 2003 AM93LC86 16384-bits Serial Electrically Erasable PROM (3) Package Type: TSSOP-8L (Preliminary) E1 PIN 1 INDICATOR ψ0.70 mm SURFACE POLISHED E L L1 DETAIL A D e A2 E1 L1 A1 y Symbol A A1 A2 b C D E E1 e L L1 y θ Dimensions In Millimeters Min. Nom. Max. 1.05 1.10 1.20 0.05 0.10 0.15 1.00 1.05 0.20 0.25 0.28 0.13 2.90 3.05 3.10 6.20 6.40 6.60 4.30 4.40 4.50 0.65 0.50 0.60 0.70 0.90 1.00 1.10 0.10 4O 8O 0O Dimensions In Inches Min. Nom. Max. 0.041 0.043 0.047 0.002 0.004 0.006 0.039 0.041 0.008 0.01 0.011 0.005 0.114 0.12 0.122 0.244 0.252 0.26 0.169 0.173 0.177 0.026 0.02 0.024 0.028 0.035 0.039 0.043 0.004 0O 4O 8O Marking Information 8 Logo Part Number & grade o o X=Blank( 0 C to + 70 C) o C to + o C) ( - 40 X=I 85 7 6 5 AC 93LC86X YYWWX C b A DETAIL A 1234 PDIP/SOP/TSSOP Package Anachip Corp. www.anachip.com.tw 12/12 Date Code YY: Year WW: Nth week X: Internal code Rev 0.1 Oct 20, 2003
AM93LC86ISA 价格&库存

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