ASB0130BD

ASB0130 SMD Schottky Barrier Diode Features IO = 100mA VR = 30V - Designed for mounting on small surface. - Extremely thin package. - Low drop-down voltage. - Majority carrier conduction. - Lead-free device 0.010(0.25)Typ. 0.033(0.85) 0.028(0.70) General Description 0603(1608) 0.071(1.80) 0.063(1.60) 0.039(1.00) 0.031(0.80) 0.012(0.30)Typ. 0.014(0.35)Typ. Dimensions in inches and (millimeter) P+ 1005(2512) 0.102(2.60) 0.095(2.40) 0.051(1.30) 0.043(1.10) Mechanical Data - Case :0603(1608) 1005(2512) standard package, molded plastic. - Terminals : Gold plated, solderable per MIL-STD-750, method 2026. - Polarity : Indicated by cathode band. - Mounting position : Any. - Weight : BD:0.003gram (approximately) 0.014(0.35)Typ. 0.014(0.35)Typ. 0.035(0.90) 0.027(0.70) 0.012(0.30)Typ. Dimensions in inches and (millimeter) BF:0.006gram (approximately) Ordering information A XX XX XX XX Feature SB : Schottky Barrier lo Vo Package type BD-0603 BF-1005 This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Aug 2, 2004 1/3 ASB0130 SMD Schottky Barrier Diode Maximum Rating (at TA=25ºC unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit VRRM VR IO IFSM PD TSTG Tj Repetitive peak reverse voltage Reverse voltage Average forward current Forward current, surge peak Power Dissipation Storage temperature Junction temperature 0603 1005 0603 1005 8.3ms single half sine-wave superimposed on rate load (JEDEC method) -40 -40 1000 1000 - 35 30 100 150 250 +125 +125 V V mA mA mW ºC ºC Electrical Characteristics (at TA=25ºC unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit VF IR CT Forward voltage Reverse current Capacitance between terminals IF=100mADC VR=30V F=1MHz, and 10 VDC reverse voltage - 9 0.44 30 - V µA pF Anachip Corp. www.anachip.com.tw 2/3 Rev. 1.0 Aug 2, 2004 ASB0130 SMD Schottky Barrier Diode Rating And Characteristic Curves 125 C 75 C 25 C -25 C f = 1 MHz Ta = 25 C A mbient temperature ( C ) Marking Information B3 ASB0130 Anachip Corp. www.anachip.com.tw 3/3 Rev. 1.0 Aug 2, 2004