ASB0520

ASB0520 SMD Schottky Barrier Diode Features IO = 500mA VR = 20V - Low forward voltage - Designed for mounting on small surface. - Extremely thin package. - Majority carrier conduction. - Lead-free device 0.015(0.40)Typ. 0.033(0.85) 0.027(0.70) General Description SOD-523F(1608) 0.071(1.80) 0.063(1.60) 0.039(1.00) 0.031(0.80) 0.012(0.30)Typ. 0.027(0.70)Typ. Dimensions in inches and (millimeter) P+ SOD-323F(2512) 0.102(2.60) 0.095(2.40) Mechanical Data - Case : SOD-523F(1608) SOD-323F(2512) standard package, molded plastic. - Terminals : Gold plated, solderable per MIL-STD-750, method 2026. - Polarity : Indicated by cathode band. - Mounting position : Any. - Weight : BD:0.003gram (approximately) 0.039(1.00)Typ. 0.021(0.55)Typ. 0.051(1.30) 0.043(1.10) 0.035(0.90) 0.027(0.70) 0.012(0.30)Typ. Dimensions in inches and (millimeter) BF:0.006gram (approximately) Ordering information A XX XX XX XX Feature SB : Schottky Barrier lo Vo Package type BD-SOD-523F BF-SOD-323F This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Aug 2, 2004 1/3 ASB0520 SMD Schottky Barrier Diode Maximum Rating (at TA=25ºC unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit VRRM VR IO IFSM TSTG Tj Repetitive peak reverse voltage Reverse voltage Average forward rectified current Forward current, surge peak Storage temperature Junction temperature 8.3ms single half sine-wave superimposed on rate load (JEDEC method) -40 -40 - 30 20 500 2 +125 +125 V V mA A ºC ºC Electrical Characteristics (at TA=25ºC unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit VF IR CT Forward voltage Reverse current Capacitance between terminals IF=100mA IF=500mA VR=20V f=1MHz, and 0 VDC reverse voltage - 100 0.36 0.47 100 - V uA pF Anachip Corp. www.anachip.com.tw 2/3 Rev. 1.0 Aug 2, 2004 ASB0520 SMD Schottky Barrier Diode Rating And Characteristic Curves Fig. 1 – Forward characteristics Fig. 2 – Reverse characteristics Fig. 3 – Capacitance between terminals characteristics Fig. 4 – Current derating curve Marking Information BL ASB0520 Anachip Corp. www.anachip.com.tw 3/3 Rev. 1.0 Aug 2, 2004