ASS355BD

ASS355 SMD Switching Diode Features IO = 100mA VR = 80V - Designed for mounting on small surface. - High speed switching. - High mounting capability, strong surge withstand, high reliability. - Extremely thin package. - Lead-free device 0.014(0.35)Typ. Dimensions in inches and (millimeter) 0.010(0.25)Typ. 0.033(0.85) 0.028(0.70) General Description 0603(1608) 0.071(1.80) 0.063(1.60) 0.039(1.00) 0.031(0.80) 0.012(0.30)Typ. 1005(2512) P+ 0.102(2.60) 0.095(2.40) 0.051(1.30) 0.043(1.10) Mechanical Data - Case : 0603(1608) 1005(2512) standard package, molded plastic. - Terminals : Gold plated, solderable per MIL-STD-750, method 2026. - Polarity : Indicated by cathode band. - Mounting position : Any. - Weight : BD:0.003gram (approximately) BF:0.006gram (approximately) 0.014(0.35)Typ. 0.014(0.35)Typ. 0.035(0.90) 0.027(0.70) 0.12(0.30)Typ. Dimensions in inches and (millimeter) Ordering information A XX 355 XX Feature SS : Small Singal PN Package type BD-0603 BF-1005 This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 0.0 Oct 29, 2003 1/3 ASS355 SMD Switching Diode Maximum Rating (at TA=25ºC unless otherwise noted) Symbol VRRM VR IO IFSM PD IFRM TSTG Tj Parameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current, surge peak Power Dissipation 0603 1005 0603 1005 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Conditions Min -40 -40 Typ 1000 1000 Max 90 80 100 150 300 225 +125 +125 Unit V V mA mA mW mA ºC ºC Repetitive peak forward current Storage temperature Junction temperature Electrical Characteristics (at TA=25ºC unless otherwise noted) Symbol VF IR CT Trr Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Conditions IF=100mADC VR=80V F=1MHz, and 0.5 VDC reverse voltage VR=6V, IF=10mA, RL=50ohms Min. Typ. 3 4 Max. 1.0 0.1 Unit V µA pF nS Anachip Corp. www.anachip.com.tw 2/3 Rev. 0.0 Oct 29, 2003 ASS355 SMD Switching Diode Rating And Characteristic Curves Fig. 1 - Forward characteristics 1000 10u 125 oC 100 1u Fig. 2 - Reverse characteristics Forward current (mA) Reverse current (A) 75oC 100n 10 1 125 o C 75 o C 25 oC -25 o C 10n 25oC 0.1 1n -25oC 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1n 0 10 20 30 40 50 60 70 80 90 100 Forward voltage (V) Reverse voltage (V) Fig. 3 - Capacitance between terminals characteristics 5.0 Fig. 4 - Current derating curve Mounting on glass epoxy PCBs Capacitance between terminals:(pF) Average forward current (%) 35 f=1MHz Ta=25oC 4.0 100 80 3.0 60 2.0 40 1.0 20 0 0 5 10 15 20 25 30 0 0 25 50 75 100 125 150 Reverse voltage (V) Ambient temperature (oC) Marking Information S4 ASS355 Anachip Corp. www.anachip.com.tw 3/3 Rev. 0.0 Oct 29, 2003