AWM6430

AWM6430 3.3-3.6 GHz WiMAX PowerAmplifier Module PRELIMINARY DATA SHEET- Rev 1.0 FEATURES • • • • • • • • • 27 dB Gain +24 dBm Linear Output Power 2.3 % EVM (OFDM Modulation) +5 V to +6 V Supply High Efficiency Integrated Step Attenuator Integrated Output Power Detector 50Ω Matched RF Ports RoHS Compliant 4.5 mm x 4.5 mm x 1.4 mm Surface Mount Module AWM6 430 APPLICATIONS • • WiMAX tranceivers that support the IEEE 802.16-2004 and ETSI EN301-021 standards Broadband Wireless Applications (BWA) M18 Package 12 Pin 4.5 mm x 4.5 mm x 1.4 mm Surface Mount Module control. No external circuits are required for biasing or RF impedance matching, thus reducing external component costs and facilitating circuit board designs. The AWM6430 is manufactured using advanced InGaP HBT technology that offers state-of-the-art reliability, temperature stability and ruggedness. It is optimized for use in a 50 Ω system, and is offered in a 4.5 mm x 4.5 mm x 1.4 mm surface mount module. Supply Voltage PRODUCT DESCRIPTION The ANADIGICS AWM6430 WiMAX Power Amplifier is a high performance device that delivers exceptional linearity and efficiency at high levels of output power. Designed to operate in the 3.5 GHz band, it supports the IEEE 802.16-2004 and ETSI EN301-021 wireless standards. The device requires only a single +5 V to +6 V supply and a low-current reference input. An integrated detector can be used to monitor output power, and an integrated 20 dB step attenuator enables gain Supply Voltage RF Input Step Attenuator Matching Network RF Output Bias Control Power Detector Attenuator Control Bias Voltage Detector Ouput Ground Figure 1: Functional Block Diagram 01/2006 AWM6430 VCC RFIN GND VBIAS VCC VATTN 1 2 3 GND 4 5 6 Figure 2: Pinout (X-ray Top View) 12 VCC 11 GND 10 RFOUT 9 8 7 GND GND DET Table 1: Pin Description PIN 1 2 3 4 5 6 7 8 9 10 11 12 NAME V CC RFIN GND VBIAS V CC VATTN D ET GND GND RFOUT GND V CC DESCRIPTION Supply Voltage RF Input Ground Bias/Shutdown Supply Voltage Attenuator Control Detector Output Ground Ground RF Output Ground Supply Voltage 2 PRELIMINARY DATA SHEET - Rev 1.0 01/2006 AWM6430 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER Supply Voltage (VCC) Bias Voltage (VBIAS) Attenuator Control Voltage (VATTN) RF Input Power ESD Rating MSL Level Storage Temperature MIN 0 0 0 Class 1A Class 3 3 4 -40 MAX +6.5 +3.3 +3.7 0 +150 UNIT V V V dB m °C OFDM modulated signal HBM CDM 235 °C Peak Reflow 250 °C Peak Reflow COMMENTS Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: Operating Ranges PARAMETER Operating Frequency (f) Supply Voltage (VCC) Bias Voltage (VBIAS) Attenuator Control Voltage (VATTN) Logic High Logi c Low RF Output Power (POUT) Case Temperature (TC) MIN 3300 +5.0 +2.9 0 +2.3 0 -40 TYP +3.0 +24 MAX 3600 +6.0 +3.1 +0.7 +3.7 +0.7 +85 UNIT MHz V V PA"on" PA"shut down" Attenuator enabled Nominal gain COMMENTS V dB m °C The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. PRELIMINARY DATA SHEET - Rev 1.0 01/2006 3 AWM6430 Table 4: Electrical Specifications (TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V, f = 3.5 GHz, 50 Ω system) PARAMETER Gain Attenuator Step Output Power Meets Spectrum Mask EVM Output P1dB Output IP3 Harmonics Power-Added Efficiency Power Detector Voltage at +24 dBm POUT at +14 dBm POUT Quiescent Current Current Consumption VCC VBIAS VATTN Leakage Current Note: 1. All RF measurements performed with an 802.11g 54 Mbps OFDM signal unless otherwise noted. MIN 25 15 +24 - TYP 27 17 2.3 +31 +43 -20 12.8 MAX 30 19 2.5 - UNIT dB dB dB m % dB m dB m dB m % COMMENTS ETSI EN301-021 Type G at +24 dBm POUT CW two CW tones, +21 dBm output per tone at +24 dBm POUT at +24 dBm POUT - +2.6 +0.6 87 120 V mA High impedance load - 305 6.8 0.2 1.7 365 8 1.0 3.0 POUT = +24 dBm mA Logic High = +3.3 V mA PA shut down (VBIAS = 0V) 4 PRELIMINARY DATA SHEET - Rev 1.0 01/2006 AWM6430 PERFORMANCE DATA Figure 3: Gain vs. Output Power (TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V, f = 3.5 GHz, 54 Mbps OFDM Modulation) 30.0 29.5 29.0 28.5 Figure 4: Gain vs. Frequency (TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V, POUT = +24 dBm, 54 Mbps OFDM Modulation) 30.0 29.5 29.0 28.5 Gain (dB) 27.5 27.0 26.5 26.0 25.5 25.0 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Gain (dB) 28.0 28.0 27.5 27.0 26.5 26.0 25.5 25.0 3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 Output Power (dBm) Frequency (GHz) Figure 5: Uncorrected EVM vs. Output Power (TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V, 54 Mbps OFDM Modulation, system EVM Approx. 0.8 %) 7 6 Figure 6: Uncorrected EVM vs. Frequency (TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V, 54 Mbps OFDM Modulation, system EVM Approx. 0.8 %) 7 5 EVM (%) EVM (%) 4 Frequency 3.30 GHz 3.35 GHz 3.40 GHz 3.45 GHz 3.50 GHz 3.55 GHz 3.60 GHz Output Power 6 +24 dBm +23 dBm +22 dBm 5 4 3 3 2 2 1 1 0 13 14 15 16 17 18 19 20 21 22 23 24 25 26 0 3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 Output Power (dBm) Frequency (GHz) Figure 7: Detector Voltage vs. Output Power (TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V, f = 3.5 GHz, 54 Mbps OFDM Modulation) 3.0 3.0 Figure 8: Detector Voltage vs. Frequency (TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V, 54 Mbps OFDM Modulation) Output Power +24 dBm +21 dBm +18 dBm +15 dBm 2.5 2.5 Detector Voltage (V) 2.0 Detector Voltage (V) 13 14 15 16 17 18 19 20 21 22 23 24 25 26 2.0 1.5 1.5 1.0 1.0 0.5 0.5 0.0 0.0 3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 Output Power (dBm) Frequency (GHz) PRELIMINARY DATA SHEET - Rev 1.0 01/2006 5 AWM6430 Figure 9: Effects of Bias Voltage (VBIAS) on EVM (TC = +25 °C, VCC = +6.0 V, f = 3.5 GHz, 54 Mbps OFDM Modulation, system EVM Approx. 0.8 %) 7 6 5 EVM (%) 4 Bias Voltage 2.80V 2.85V 2.90V 2.95V 3.00V 3.05V 3.10V 3 2 1 0 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Output Power (dBm) Figure 10: Effects of Supply Voltage (VCC) on EVM (TC = +25 °C, VBIAS = +3.0 V, f = 3.5 GHz, 54 Mbps OFDM Modulation, system EVM Approx. 0.8 %) 7 6 Vcc 6.0 V 5.5 V 5.0 V 5 EVM (%) 4 3 2 1 0 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Output Power (dBm) Figure 11: Effects of Case Temperature on EVM (VCC = +6.0 V, VBIAS = +3.0 V, f = 3.5 GHz, 54 Mbps OFDM Modulation, system EVM Approx. 0.8 %) 7 Case Temperature 6 5 +85 deg C +50 deg C +25 deg C 0 deg C -25 deg C -40 deg C EVM (%) 4 3 2 1 0 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Output Power (dBm) 6 PRELIMINARY DATA SHEET - Rev 1.0 01/2006 AWM6430 Figure 12: Gain vs. Bias Voltage (VBIAS) (TC = +25 °C, VCC = +6.0 V, f = 3.5 GHz, 54 Mbps OFDM Modulation) 30.0 29.5 29.0 28.5 Figure 13: Gain vs. Case Temperature (VCC = +6.0 V, VBIAS = +3.0 V, f = 3.5 GHz, POUT = +23 dBm, 54 Mbps OFDM Modulation) 30.0 29.5 29.0 28.5 Gain (dB) 28.0 27.5 27.0 26.5 26.0 25.5 25.0 2.75 Gain (dB) 28.0 27.5 27.0 26.5 26.0 25.5 25.0 2.80 2.85 2.90 2.95 3.00 3.05 3.10 3.15 -50 -40 -30 -20 -10 0 10 20 30 o 40 50 60 70 80 90 Bias Voltage (V) Case Temperature ( C ) Figure 14: Supply Current vs. Output Power (TC = +25 °C, VCC = +6.0 V, VBIAS = +3.0 V, f = 3.5 GHz, 54 Mbps OFDM Modulation) 400 Figure 15: Supply Current vs. Case Temperature (VCC = +6.0 V, VBIAS = +3.0 V, f = 3.5 GHz, POUT = +23 dBm 54 Mbps OFDM Modulation) 300 350 290 300 Icc (mA) 250 Icc (mA) 280 270 200 260 150 100 13 14 15 16 17 18 19 20 21 22 23 24 25 26 250 -50 -40 -30 -20 -10 0 10 20 30 o 40 50 60 70 80 90 Output Power (dBm) Case Temperature ( C ) PRELIMINARY DATA SHEET - Rev 1.0 01/2006 7 AWM6430 APPLICATION INFORMATION Transmit Disable and Attenuator Control The power amplifier is disabled by setting V BIAS below +0.7 V. The step attenuator is enabled by applying a logic high to VATTN; the PA exhibits nominal gain when a logic low is applied to VATTN. VCC VCC 2.2 µF 150 pF 6.8 pF 1 0.01 µF VCC RFIN GND VBIAS VCC VATTN VCC GND RFOUT GND GND DET GND at slug 12 11 10 9 8 7 2 3 1 µF 2.2 µF RF IN RF OUT VBIAS VCC 4 5 0.1 µF VATTN 6 DETOUT 4.7 K 0.1 µF Figure 16: Application Circuit 8 PRELIMINARY DATA SHEET - Rev 1.0 01/2006 AWM6430 Figure 17: Land Pattern PRELIMINARY DATA SHEET - Rev 1.0 01/2006 9 AWM6430 PACKAGE OUTLINE Figure 18: M18 Package Outline - 12 Pin 4.5 mm x 4.5 mm x 1.4 mm Surface Mount Module 10 PRELIMINARY DATA SHEET - Rev 1.0 01/2006 AWM6430 NOTES PRELIMINARY DATA SHEET - Rev 1.0 01/2006 11 AWM6430 ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE PACKAGE DESCRIPTION RoHS-compliant 12 Pin 4.5 mm x 4.5 mm x 1.4 mm Surface Mount Module COMPONENT PACKAGING AWM6430RM18P8 -40 °C to +85 °C 2,500 piece Tape and Reel ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: Mktg@anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. WARNING ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 12 PRELIMINARY DATA SHEET - Rev 1.0 01/2006