AWM6433RM35P8

3.4 - 3.6 GHz WiMAX Power Amplifier Module • • • • • • • • • • • AWM6433 preliMinAry dAtA sheet - rev 1.0 FeAtUres InGaP HBT Technology 30 dB Gain < 3 % EVM at +22 dBm (+3.3 V Supply) 4 % EVM at +23 dBm (+3.3 V Supply) < 3 % EVM at +23 dBm (+4.2 V Supply) 4 % EVM at +24 dBm (+4.2 V Supply) High Efficiency Integrated 25 dB Attenuator Integrated Output Power Detector 50  Matched RF Ports for Reduced External Component Count 4.5 mm x 4.5 mm x 1.0 mm Surface Mount Module, Materials Set Consistent with RoHS Directives WiMAX Tranceivers That Support the IEEE 802.16d-2004, IEEE 802.16e-2005, and the ETSI EN301-021 Wireless standards AppliCAtiOns • M35 package 12 pin 4.5 mm x 4.5 mm x 1.0 mm surface Mount Module produces an increase in the maximum linear output power. The integrated detector can be used to monitor output power, and the integrated 25 dB step attenuator enables gain control. No external circuits are required for biasing or RF impedance matching, thus reducing external component costs and facilitating circuit board designs. The AWM6433 is manufactured using advanced InGaP HBT technology that offers state-of-the-art reliability, temperature stability, and ruggedness. It is offered in a 4.5 mm x 4.5 mm x 1.0 mm surface mount module optimized for use in a 50  system. Supply Voltage prOdUCt desCriptiOn The ANADIGICS AWM6433 WiMAX Power Amplifier is a high performance device that delivers exceptional linearity and efficiency at high levels of output power. Designed for portable or mobile applications in the 3.4-3.6 GHz band, it supports the IEEE 802.16e-2005 wireless standard, as well as the IEEE 802.16d-2004 and ETSI EN301-021 standards. The device requires only a nominal +3.3 V supply and a low-current bias input. An increase in supply voltage Supply Voltage RF Input Step Attenuator Matching Network RF Output Bias Control Power Detector Attenuator Control Bias Voltage Detector Ouput Ground Figure 1: Functional Block diagram 12/2008 AWM6433 VCC rFin Gnd VBiAs VCC VAttn 1 2 3 4 5 6 Figure 2: pinout (X-ray top View) 12 VCC 11 Gnd 10 rFOUt 9 8 7 Gnd Gnd det Gnd table 1: pin description pin 1 2 3 4 5 6 7 8 9 10 11 12 nAMe VCC RFIN GND VBIAS VCC VATTN DET GND GND RFOUT GND VCC desCriptiOn Supply Voltage RF Input Ground Bias/Shutdown Supply Voltage Attenuator Control Detector Output Ground Ground RF Output Ground Supply Voltage 2 PRELIMINARY DATA SHEET - Rev 1.0 12/2008 AWM6433 eleCtriCAl ChArACteristiCs table 2: Absolute Minimum and Maximum ratings pArAMeter Supply Voltage (VCC) Bias Voltage (VBIAS) Attenuator Control Voltage (VATTN) RF Input Power ESD Rating Human Body Model Charged Device Model MSL Level Storage Temperature Min 0 0 0 TBD TBD TBD -40 MAX +5.0 +3.0 +3.7 0 +150 Unit V V V dBm V °C OFDM modulated signal COMMents stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. exposure to absolute ratings for extended periods of time may adversely affect reliability. table 3: Operating ranges pArAMeter Operating Frequency (f) Supply Voltage (VCC) Bias Voltage (VBIAS) Attenuator Control Voltage (VATTN) Logic High Logic Low RF Output Power (POUT) Case Temperature (TC) Min 3400 +2.9 +2.80 0 +2.3 0 -40 typ +3.3 +2.85 +23 MAX 3600 +4.2 +2.90 +0.7 +3.7 +0.7 +85 Unit MHz V V PA"on" PA"shut down" Attenuator enabled Nominal gain COMMents V dBm °C the device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. PRELIMINARY DATA SHEET - Rev 1.0 12/2008 3 AWM6433 Table 4: Electrical Specifications (tC = +25 °C, VCC = +3.3 V, VBiAs = +2.85 V, f = 3.6 Ghz, 50 Ω system) pArAMeter Gain Attenuator Step Output Power Meets Spectrum Mask EVM Output P1dB Output IP3 Harmonics Power-Added Efficiency Power Detector Voltage at +24 dBm POUT at +14 dBm POUT Quiescent Current Current Consumption VCC VCC VBIAS VATTN Leakage Current (2) Min typ 31 25 +24 2.8 4 +29 +40 -30 23 +2.15 +0.85 135 280 325 6.5 0.2 MAX 3.2 8.0 1.0 Unit dB dB dBm % dBm dBm dBc % ETSI EN301-021 Type G at +22 dBm POUT at +23 dBm POUT CW two CW tones, +19 dBm output per tone at +24 dBm POUT at +24 dBm POUT COMMents V mA High impedance load mA at +22 dBm POUT at +24 dBm POUT Logic High = +3.3 V PA shut down (VBIAS = 0V) See figure 7 Application Circuit. - 1.7 3.0 mA Notes: 1. All RF measurements performed with an 802.11g 54 Mbps OFDM signal unless otherwise noted. (2) Lower leakage current may be obtained by using an alternate application circuit. Please refer to the ANADIGICS application note titled, “AWM6423 Reduced leakage current in Off State.” 4 PRELIMINARY DATA SHEET - Rev 1.0 12/2008 AWM6433 perFOrMAnCe dAtA Figure 3: Gain vs. Output power (tC = +25 °C, VCC = +3.3 V, VBiAs = +2.85 V, 54 Mbps OFdM Modulation) 35 34 33 32 Figure 4: Uncorrected eVM vs. Output power (tC = +25 °C, VCC = +3.3 V, VBiAs = +2.85 V, 54 Mbps OFdM Modulation, system eVM approx. 0.8 %) 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 3.30 GHz 3.40 GHz 3.50 GHz 3.60 GHz Gain (dB) 30 29 28 27 26 25 13 14 15 16 17 18 19 20 21 22 23 24 25 3.30 GHz 3.40 GHz 3.50 GHz 3.60 GHz eVM (%) 31 13 14 15 16 17 18 19 20 21 22 23 24 25 Output power (dBm) Output power (dBm) 400 Figure 5: supply Current vs. Output power (tC = +25 °C, VCC = +3.3V, VBiAs = +2.85 V, 54 Mbps OFdM Modulation) 3.30 GHz 3.40 GHz 3.50 GHz 3.60 GHz 2.50 2.25 2.00 Figure 6: detector Voltage vs. Output power (tC = +25 °C, VCC = +3.3 V, VBiAs = +2.85 V, 54 Mbps OFdM Modulation) 3.30 GHz 3.40 GHz 3.50 GHz 3.60 GHz 350 300 detector Voltage (V) 16 17 18 19 20 21 22 23 24 25 1.75 1.50 1.25 1.00 icc (mA) 250 200 150 0.75 100 13 14 15 0.50 13 14 15 16 17 18 19 20 21 22 23 24 25 Output power (dBm) Output power (dBm) PRELIMINARY DATA SHEET - Rev 1.0 12/2008 5 AWM6433 AppliCAtiOn inFOrMAtiOn transmit disable and Attenuator Control The power amplifier is disabled by setting VBIAS below +0.7 V. The step attenuator is enabled by applying a logic high to VATTN; the PA exhibits nominal gain when a logic low is applied to VATTN. VCC VCC 2.2 F 1 0.01 F VCC RFIN GND VBIAS VCC VATTN VCC GND RFOUT GND GND DET GND at slug 12 11 10 9 8 7 2 3 1 F 2.2 F RF IN VBIAS RF OUT 4 VCC 5 100 pF 0.1 F VATTN 6 DETOUT 4.7 K 0.1 F Figure 7: Application Circuit 6 PRELIMINARY DATA SHEET - Rev 1.0 12/2008 AWM6433 Figure 8: land pattern PRELIMINARY DATA SHEET - Rev 1.0 12/2008 7 AWM6433 pACKAGe OUtline Figure 9: M35 package Outline - 12 pin 4.5 mm x 4.5 mm x 1.0 mm surface Mount Module 8 PRELIMINARY DATA SHEET - Rev 1.0 12/2008 AWM6433 OrderinG inFOrMAtiOn Order nUMBer teMperAtUre rAnGe -40 °C to +85 °C pACKAGe desCriptiOn 12 Pin 4.5 mm x 4.5 mm x 1.0 mm Surface Mount Module COMpOnent pACKAGinG AWM6433RM35P8 2,500 piece Tape and Reel AnAdiGiCs, inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: Mktg@anadigics.com iMpOrtAnt nOtiCe ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. WArninG 9 PRELIMINARY DATA SHEET - Rev 1.0 12/2008