AWT6106M5P8

AWT6106 PCS/CDMA 3.5V/28.5dBm Linear Power Amplifier Module Data Sheet - Rev 2.0 FEATURES • • • • • • • • • • InGaP HBT Technology High Efficiency (37% Typical) Low Leakage Current (5µA) SMT Module Package Small Foot Print (6mm x 6mm) Low Profile (1.5mm) 50 Ω Input and Output Matching Low Quiescent Current (Icq = 63 mA) Shut Down & Mode Control CDMA 2000 IXRTT Compliant APPLICATIONS • • PCS CDMA handsets Dual Band CDMA M5 Package 7 Pin 6mm x 6mm Surface Mount Module PRODUCT DESCRIPTION The AWT6106 is a 3.5 V (3.0 V to 4.2 V) high power, high efficiency, three stage power amplifier module for Dual Mode CDMA/PCS wireless handsets. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. A low power VCC quiescent current mode is digitally controlled to reduce power drain on the system battery. The 6mm x 6mm laminate package is self contained, incorporating 50Ω input and output matching networks optimized for output power, linearity, and efficiency. 1 7 GND RFIN 2 6 RFOUT Bias Control VREF 3 4 VMODE 5 VCC Figure 1: Block Diagram 03/2002 AWT6106 VCC 1 7 GND RFIN 2 6 RFOUT VREF 3 4 VMODE 5 VCC Figure 2: Pinout (X-ray Top View) Table 1: Pin Description PIN 1 2 3 4 5 6 7 NAME VCC RFIN VREF VMODE VCC RFOUT GND DESCRIPTION Supply Voltage RF Input Signal Reference Voltage Mode Control Supply Voltage RF Output Ground 2 Data Sheet - Rev 2.0 03/2002 AWT6106 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER Supply Voltage (VCC ) Mode Control Voltage (VMODE) Reference Voltage (VREF) RF Input Power (PIN) Storage Temperature (TSTG) MIN 0 0 MAX +5 +3.5 +3.5 +10 +150 UNITS V V 0 -40 V ddB m °C Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: Operating Ranges PARAMETER Operating Frequency (f) Supply Voltage (VCC) Reference Voltage (VREF) MIN 1850 +3.0 +2.75 0 +2.5 0 0 +28 -30 TYP +3.5 +3.0 +2.7 +28.5 - MAX 1910 +4.2 +3.1 +0.5 +3.1 +0.5 +0.5 +110 UNIT MHz V V COMMENTS PA "on" PA "shut down" Low Bias Mode High Bias Mode PA "shut down" Mode Control Voltage (VMODE) RF Output Power (POUT) Case Temperature (TC) V dB m o C The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Data Sheet - Rev 2.0 03/2002 3 AWT6106 Table 4: Electrical Specifications ( TC = +25 °C, VCC = +3.5 V, VREF = +3.0 V, VMODE = +2.7 V, POUT = +28.5 dBm, 50 Ω System) PARAMETER Gain: High Bias Mode Gain: Low Bias Mode Adjacent Channel Power at ±1.25 MHz offset; Primary Channel BW = 1.23 MHz Adjacent Channel BW = 30 kHz MIN 25.0 24.0 23.0 32 31 6 TYP 29.5 28.5 28.0 -51 -50 -62 -59 -62 -59 37 36 7 63 7