AWT6108R

AWT6108R GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Integrated Power Control PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • • • • • • • • • • • • InGaP HBT Technology Integrated Power Control (CMOS) Quad Band Applications +35 dBm GSM Output Power at 3.5 V +33 dBm DCS/PCS Output Power at 3.5 V 55% GSM PAE 50% DCS/PCS PAE Small Footprint: 7 x 10 mm Low Profile: 1.4 mm Power Control Range: >50 dB GPRS Capable (Class 12) RoHS Compliant Package, 250 oC MSL-3 AW T 610 8R APPLICATIONS • • GSM850/GSM900/DCS/PCS Handsets Dual/Tri/Quad Band PDA 20 Pin 7 mm x 10 mm x 1.4 mm Surface Mount Module PRODUCT DESCRIPTION This quad band power amplifier module is designed to support dual, tri and quad band applications. The module includes an integrated power control scheme that facilitates fast and easy production calibration and reduces the number of external components required to complete a power control function. The amplifier’s power control range is typically 55dB, with the output power set by applying an analog voltage to VRAMP. The logical control inputs, TX_EN and BS, are both 1.8 V and 3 V logic compliant. The TX_EN is used to enable the amplifier typically with the TX burst. The BS is used to select which amplifier is enabled. There are two amplifier chains, one to support GSM850/900 bands, the other for DCS/PCS bands. All of the RF ports for this device are internally matched to 50 Ω. Internal DC blocks are provided at the RF ports. Figure 1: Block Diagram 01/2006 AWT6108R Figure 2: Pinout (X-Ray Top View) Table 1: Pin Description PIN 1 2 3 NAME DCS/PCS_IN BS TX_EN DESCRIPTION DCS/PCS RF Input Band Select Logic Input TX Enable Logic Input Battery Supply Connection Regulated Supply Connection Analog Signal Used to Control the Output Power GSM850/900 RF Input VCC Control Input for GSM850/900 PreAmplifier Ground Ground PIN 11 12 13 NAME GSM_OUT GND GND DESCRIPTION GSM850/900 RF Output Ground Ground Control Voltage Output Which Must be Connected to VCC2, No Decoupling Ground Ground 4 VBATT 14 VCC_OUT 5 6 7 8 9 10 VREG VRAMP GSM_IN VC C 2 GND GND 15 16 17 18 19 20 GND GND DCS/PCS_OUT DCS/PCS RF Output GND GND VC C 2 Ground Ground VCC Control Input for DCS/PCS Pre-Amplifier 2 PRELIMINARY DATA SHEET - Rev 1.0 01/2006 AWT6108R ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PAR AME T E R Supply Voltage (VBATT) RF Input Power (RFIN) Control Voltage (VRAMP) Storage Temperature (TSTG) MIN 0 0 -0.3 -55 M AX 7 11 1.8 150 U N IT V dBm V °C Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: ESD Ratings PAR AME T E R ESD Threshold Voltage (RF Ports) ESD Threshold Voltage (Control Inputs) ME T H OD HBM HBM R AT IN G >250 >2.5 U N IT V kV Although protection circuitry has been designed into this device, proper precautions should be taken to avoid exposure to electronic discharge (ESD) during handling and mounting. Human body model (HBM) employed is resistance = 1500 Ω , capacitance = 100 pF. PRELIMINARY DATA SHEET - Rev 1.0 01/2006 3 AWT6108R Table 4: Digital Inputs PAR AME T E R Logi c Hi gh Voltage (VH) Logi c Low Voltage (VL) Logi c Hi gh Current (I H) Logi c Low Current (I L) MIN 1.2 T YP M AX VREG 0.5 30 30 U N IT V V µA µA Table 5: Operating Ranges PAR AME T E R Case Temperature (TC) Supply Voltage (VBATT) Regulated Voltage (VREG) Regulated Current (IREG) TX_EN = HIGH TX_EN = LOW Control Voltage for Maxi mum Power (VRAMP_MAX) Control Voltage for Mi ni mum Power (VRAMP_MIN) Power Supply Leakage Current VRAMP Input Capaci tance VRAMP Input Current Turn On/Off Ti me Duty Cycle MIN -20 3.0 2.7 T YP 3.5 2.8 6 10 0.2 M AX 85 5.5 2.9 8 30 1.6 0.25 U N IT o C OMME N T S C V V mA µA V V VBATT = 5.5 V, VREG = 0V, VRAMP = 0V, TX_EN = LOW, No RF Appli ed - 1 3 1 - 10 10 2 50 µA pF µA µs % VRAMP = VRAMP_MAX VRAMP = 0.2V to VRAMP_MAX The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. 4 PRELIMINARY DATA SHEET - Rev 1.0 01/2006 AWT6108R Table 6: Electrical Characteristics for GSM850/900 (VBATT = 3.5 V, VREG = 2.8 V, PIN = 2.0 dBm, Pulse Width = 1154 µs, Duty 25%, ZIN = ZOUT = 50Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH) PARAMETER Operating Frequency (FO) Input Power Output Power (PMAX) Degraded Output Power PAE @ PMAX Forward Isolation 1 Forward Isolation 2 Cross Isolation (2FO @ DCS/PCS port) Harmonics 2fo 3fo MIN 824 880 0 34.5 32.0 48 TYP 2 35 32.5 55 -37 -25 -30 MAX 849 915 5 -30 -10 -20 UNIT MHz dB m dB m dB m % dB m dB m dB m Freq = 824 to 915 MHz VBATT = 3.0 V, TC = 85 °C, PIN = 0 dBm Freq = 824 to 915 MHz TX_EN = LOW, PIN = 5 dBm TX_EN = HIGH, VRAMP = 0.2 V, PIN = 5 dBm VRAMP = 0.2 V to VRAMP_MAX COMMENTS - -17 -30 -5 -15 dB m Over all output power levels VSWR = 8:1 all phases, POUT < 34.5 dBm FOUT < 1GHz FOUT > 1GHz All load phases, POUT < 34.5 dBm Stability - -86 -36 -30 10:1 -83 dB m Ruggedness dB m FTX = 849 MHz, RBW = 100 kHz, FRX = 869 to 894 MHz, POUT < 34.5 dBm FTX = 915 MHz, RBW = 100 kHz, FRX = 925 to 935 MHz, POUT < 34.5 dBm FTX = 915 MHz, RBW = 100 kHz, FRX = 935 to 960 MHz, POUT < 34.5 dBm Over all output power levels RX Noise Power - -81 -77 dB m Input VSWR - -86 - -83 2.5:1 dB m PRELIMINARY DATA SHEET - Rev 1.0 01/2006 5 AWT6108R Table 7: Electrical Characteristics for DCS/PCS (VBATT = 3.5 V, VREG = 2.8 V, PIN = 2.0 dBm, Pulse Width = 1154 µs, Duty 25%, ZIN = ZOUT = 50Ω, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH) PARAMETER Operating Frequency (FO) Input Power Output Power (PMAX) Degraded Output Power PAE @ PMAX Forward Isolation 1 Forward Isolation 2 Harmonics 2fo 3fo MIN 1710 1850 0 32 29.5 45 TYP 2 33 30.5 50 -37 -17 MAX 1785 1910 5 -30 -10 UNIT MHz dB m dB m dB m % dB m dB m VBATT = 3.0 V, TC = 85 °C, PIN = 0 dBm Freq = 1710 to 1910 MHz TX_EN = LOW, PIN = 5 dBm TX_EN = HIGH, VRAMP = 0.2 V, PIN = 5 dBm COMMENTS - -12 -30 -5 -15 dB m Over all output power levels VSWR = 8:1 all phases, POUT < 32 dBm FOUT < 1GHz FOUT > 1GHz All load phases, POUT < 32 dBm Stability - -87 -36 -30 10:1 -80 dB m Ruggedness dB m RX Noise Power Input VSWR -87 -80 2.5:1 dB m FTX = 1785 MHz, FRX = 1805 to 1880 MHz, POUT < 32.0 dBm FTX = 1910 MHz, RBW = 100 kHz, FRX = 1930 to 1990 MHz, POUT < 32.0 dBm Over all output power levels 6 PRELIMINARY DATA SHEET - Rev 1.0 01/2006 AWT6108R PERFORMANCE DATA Figure 3: GSM850/GSM900 Pout vs Vramp &Temperature (2 TX slots) 40 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 VBATT = 3.5V, Pin = 2dBm VREG = 2.8V, PW = 1154us 1.3 1.4 1.5 1.6 Vramp (V) 836.5MHz, +25C 897.5MHz, +25C 836.5MHz, -25C 897.5MHz, -25C 836.5MHz, +85C 897.5MHz, +85C Figure 4: DCS/PCS Pout vs Vramp & Temperature (2 TX slots) 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 VBATT = 3.5V, Pin = 2dBm VREG = 2.8V, PW = 1154us Vramp (V) 1747.5MHz,+25C 1880MHz, +25C 1747.5MHz, -25C 1880MHz, -25C 1747.5MHz, +85C 1880MHz, +85C PRELIMINARY DATA SHEET - Rev 1.0 01/2006 7 AWT6108R Figure 5: GSM850/GSM900 PMAX vs. Temperature @ Vramp=Vrampmax = 1.6V (2TX slots) 38.0 37.5 37.0 36.5 36.0 35.5 35.0 34.5 34.0 33.5 33.0 32.5 32.0 820 830 840 850 860 870 880 890 900 910 920 VBATT = 3.5V, VREG = 2.8V VRAMP = 1.6V, PW = 1154us Pin = 2 dBm Frequency (MHz) GSM850, -20°C GSM900, -20°C GSM850, +25°C GSM900, +25°C GSM850, +85°C GSM900, +85°C Figure 6: DCS/PCS PMAX vs. Temperature @ VRAMP = VRAMPMAX = 1.6 V ( 2 TX slots) 35.0 34.8 34.6 34.4 34.2 34.0 33.8 33.6 33.4 33.2 33.0 32.8 32.6 32.4 32.2 32.0 31.8 31.6 31.4 31.2 31.0 1700 DCS -20°C PCS -20°C DCS +25°C PCS +25°C DCS +85°C PCS +85° C Vcc = 3.5V, Vreg = 2.8V Temp. = +25°C, PW= 1154usec Vramp = 1.6V Pout (dBm) 1720 1740 1760 1780 1800 1820 1840 1860 1880 1900 1920 Frequency (MHz) 8 PRELIMINARY DATA SHEET - Rev 1.0 01/2006 AWT6108R PACKAGE OUTLINE Figure 7: Package Outline Figure 8: Branding Specification PRELIMINARY DATA SHEET - Rev 1.0 01/2006 9 AWT6108R COMPONENT PACKAGING Figure 9: Tape & Reel Packaging Table 8: Tape & Reel Dimensions PACKAGE TYPE 7 X 10 x 1.4 mm TAPE WIDTH 16mm POCKET PITCH 12mm REEL CAPACITY 2500 MAX REEL DIA 22" 10 PRELIMINARY DATA SHEET - Rev 1.0 01/2006 AWT6108R NOTES PRELIMINARY DATA SHEET - Rev 1.0 01/2006 11 AWT6108R ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE -30 oC to +110 oC PACKAGE DESCRIPTION RoHS Compliant 20 Pin 7 mm x 10 mm x 1.4 mm Surface Mount Module COMPONENT PACKAGING AWT6108RM10P8 Tape and Reel, 2500 pieces per reel ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: Mktg@anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. WARNING ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 12 PRELIMINARY DATA SHEET - Rev 1.0 01/2006